TWI734543B - 半導體裝置及電力轉換裝置 - Google Patents

半導體裝置及電力轉換裝置 Download PDF

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Publication number
TWI734543B
TWI734543B TW109122447A TW109122447A TWI734543B TW I734543 B TWI734543 B TW I734543B TW 109122447 A TW109122447 A TW 109122447A TW 109122447 A TW109122447 A TW 109122447A TW I734543 B TWI734543 B TW I734543B
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Taiwan
Prior art keywords
semiconductor layer
semiconductor
layer
semiconductor substrate
unit cell
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TW109122447A
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English (en)
Chinese (zh)
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TW202111948A (zh
Inventor
古川智康
白石正樹
渡邉聡
三好智之
竹内悠次郎
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日商日立功率半導體股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
TW109122447A 2019-09-13 2020-07-02 半導體裝置及電力轉換裝置 TWI734543B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-166780 2019-09-13
JP2019166780A JP7171527B2 (ja) 2019-09-13 2019-09-13 半導体装置および電力変換装置

Publications (2)

Publication Number Publication Date
TW202111948A TW202111948A (zh) 2021-03-16
TWI734543B true TWI734543B (zh) 2021-07-21

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Country Status (6)

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US (2) US12300716B2 (enExample)
EP (1) EP4030489A4 (enExample)
JP (2) JP7171527B2 (enExample)
CN (2) CN120282461A (enExample)
TW (1) TWI734543B (enExample)
WO (1) WO2021049090A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023147422A (ja) * 2022-03-30 2023-10-13 株式会社 日立パワーデバイス 半導体装置および電力変換装置
JP2023172272A (ja) * 2022-05-23 2023-12-06 株式会社 日立パワーデバイス 半導体装置および電力変換装置
JP2024163409A (ja) * 2023-05-12 2024-11-22 ミネベアパワーデバイス株式会社 半導体装置

Citations (4)

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Publication number Priority date Publication date Assignee Title
US20150340441A1 (en) * 2012-03-30 2015-11-26 Fuji Electric Co., Ltd. High voltage semiconductor apparatus
JP2016012581A (ja) * 2014-06-27 2016-01-21 株式会社日立製作所 半導体装置及びそれを用いた電力変換装置
US20170213886A1 (en) * 2012-03-30 2017-07-27 Fuji Electric Co., Ltd. Vertical high voltage semiconductor apparatus and fabrication method of vertical high voltage semiconductor apparatus
US20180308972A1 (en) * 2017-04-20 2018-10-25 Fuji Electric Co., Ltd. Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

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JP4097416B2 (ja) 2001-10-26 2008-06-11 新電元工業株式会社 絶縁ゲート型バイポーラトランジスタ及びその製造方法
JP2011100877A (ja) 2009-11-06 2011-05-19 Toshiba Corp 半導体装置及びその製造方法
JP5636808B2 (ja) * 2010-08-17 2014-12-10 株式会社デンソー 半導体装置
US9698221B2 (en) * 2014-05-01 2017-07-04 Mitsubishi Electric Corporation Semiconductor device
JP6641983B2 (ja) 2015-01-16 2020-02-05 株式会社デンソー 半導体装置
JP6353804B2 (ja) 2015-03-27 2018-07-04 株式会社 日立パワーデバイス 半導体装置及びそれを用いた電力変換装置
JP6769165B2 (ja) * 2016-08-10 2020-10-14 富士電機株式会社 半導体装置
WO2018074425A1 (ja) 2016-10-17 2018-04-26 富士電機株式会社 半導体装置
JP6855793B2 (ja) * 2016-12-28 2021-04-07 富士電機株式会社 半導体装置
DE112017007186B4 (de) * 2017-03-07 2024-06-27 Mitsubishi Electric Corporation Halbleitereinheit und leistungswandler
JP7325931B2 (ja) * 2017-05-16 2023-08-15 富士電機株式会社 半導体装置
DE102017124872B4 (de) * 2017-10-24 2021-02-18 Infineon Technologies Ag Verfahren zur Herstellung eines IGBT mit dV/dt-Steuerbarkeit
US10600897B2 (en) * 2017-11-08 2020-03-24 Fuji Electric Co., Ltd. Semiconductor device
JP7222180B2 (ja) * 2018-04-04 2023-02-15 富士電機株式会社 半導体装置
JP6870119B2 (ja) * 2019-04-11 2021-05-12 三菱電機株式会社 半導体装置および電力変換装置
JP7118033B2 (ja) * 2019-06-07 2022-08-15 三菱電機株式会社 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150340441A1 (en) * 2012-03-30 2015-11-26 Fuji Electric Co., Ltd. High voltage semiconductor apparatus
US20170213886A1 (en) * 2012-03-30 2017-07-27 Fuji Electric Co., Ltd. Vertical high voltage semiconductor apparatus and fabrication method of vertical high voltage semiconductor apparatus
JP2016012581A (ja) * 2014-06-27 2016-01-21 株式会社日立製作所 半導体装置及びそれを用いた電力変換装置
US20180308972A1 (en) * 2017-04-20 2018-10-25 Fuji Electric Co., Ltd. Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Also Published As

Publication number Publication date
TW202111948A (zh) 2021-03-16
EP4030489A1 (en) 2022-07-20
US12300716B2 (en) 2025-05-13
JP2021044462A (ja) 2021-03-18
JP7503612B2 (ja) 2024-06-20
CN114391184B (zh) 2025-03-28
US20250234600A1 (en) 2025-07-17
JP7171527B2 (ja) 2022-11-15
CN120282461A (zh) 2025-07-08
WO2021049090A1 (ja) 2021-03-18
CN114391184A (zh) 2022-04-22
JP2023011834A (ja) 2023-01-24
US20220278194A1 (en) 2022-09-01
EP4030489A4 (en) 2023-10-18

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