TWI731101B - 蝕刻處理方法 - Google Patents

蝕刻處理方法 Download PDF

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Publication number
TWI731101B
TWI731101B TW106119401A TW106119401A TWI731101B TW I731101 B TWI731101 B TW I731101B TW 106119401 A TW106119401 A TW 106119401A TW 106119401 A TW106119401 A TW 106119401A TW I731101 B TWI731101 B TW I731101B
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TW
Taiwan
Prior art keywords
etching
gas
frequency power
containing gas
treatment method
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TW106119401A
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English (en)
Chinese (zh)
Other versions
TW201810429A (zh
Inventor
工藤仁
高山航
戶村幕樹
Original Assignee
日商東京威力科創股份有限公司
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Publication of TW201810429A publication Critical patent/TW201810429A/zh
Application granted granted Critical
Publication of TWI731101B publication Critical patent/TWI731101B/zh

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    • H10P50/283—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H10P14/662—
    • H10P50/242—
    • H10P50/267—
    • H10P72/0421—
    • H10P72/0602—
    • H10P95/90—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
TW106119401A 2016-06-23 2017-06-12 蝕刻處理方法 TWI731101B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-124600 2016-06-23
JP2016124600A JP6604911B2 (ja) 2016-06-23 2016-06-23 エッチング処理方法

Publications (2)

Publication Number Publication Date
TW201810429A TW201810429A (zh) 2018-03-16
TWI731101B true TWI731101B (zh) 2021-06-21

Family

ID=60677880

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106119401A TWI731101B (zh) 2016-06-23 2017-06-12 蝕刻處理方法

Country Status (4)

Country Link
US (1) US10692729B2 (enExample)
JP (1) JP6604911B2 (enExample)
KR (1) KR102584336B1 (enExample)
TW (1) TWI731101B (enExample)

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KR102741055B1 (ko) * 2018-02-15 2024-12-10 도쿄엘렉트론가부시키가이샤 플라즈마 에칭 방법 및 플라즈마 에칭 장치
JP7158252B2 (ja) * 2018-02-15 2022-10-21 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
KR20200123481A (ko) * 2018-03-16 2020-10-29 램 리써치 코포레이션 유전체들의 고 종횡비 피처들의 플라즈마 에칭 화학물질들
JP2019179889A (ja) 2018-03-30 2019-10-17 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
TWI804638B (zh) * 2018-06-22 2023-06-11 日商關東電化工業股份有限公司 使用含硫原子之氣體分子之電漿蝕刻方法
KR102608957B1 (ko) 2018-08-27 2023-12-01 삼성전자주식회사 플라즈마 처리 장치
JP7229033B2 (ja) * 2019-02-01 2023-02-27 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP7222940B2 (ja) * 2019-02-18 2023-02-15 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
KR102904251B1 (ko) * 2019-02-18 2025-12-24 도쿄엘렉트론가부시키가이샤 에칭 방법
JP2020177958A (ja) * 2019-04-15 2020-10-29 東京エレクトロン株式会社 基板処理方法及び基板処理装置
TWI848120B (zh) * 2019-06-13 2024-07-11 日商東京威力科創股份有限公司 蝕刻方法以及蝕刻裝置
US11651969B2 (en) 2019-07-18 2023-05-16 Kioxia Corporation Etching method, semiconductor manufacturing apparatus, and method of manufacturing semiconductor device
JP7413093B2 (ja) * 2019-07-18 2024-01-15 キオクシア株式会社 エッチング方法、半導体製造装置、および半導体装置の製造方法
JP7065254B2 (ja) * 2020-04-10 2022-05-11 株式会社日立ハイテク エッチング方法
US11171012B1 (en) 2020-05-27 2021-11-09 Tokyo Electron Limited Method and apparatus for formation of protective sidewall layer for bow reduction
US11087989B1 (en) 2020-06-18 2021-08-10 Applied Materials, Inc. Cryogenic atomic layer etch with noble gases
TWI893186B (zh) * 2020-08-24 2025-08-11 日商東京威力科創股份有限公司 蝕刻方法及電漿處理裝置
JP7715462B2 (ja) * 2020-08-24 2025-07-30 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
WO2022041198A1 (zh) * 2020-08-31 2022-03-03 深圳大学 一种三维堆叠存储芯片的温度变化计算方法
JP7767024B2 (ja) 2021-05-07 2025-11-11 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP7641170B2 (ja) * 2021-05-07 2025-03-06 東京エレクトロン株式会社 基板処理装置及び基板処理方法
TW202301473A (zh) * 2021-06-15 2023-01-01 日商鎧俠股份有限公司 半導體製造裝置及半導體裝置之製造方法
US12123816B2 (en) * 2021-06-21 2024-10-22 Fei Company Vibration-free cryogenic cooling
JP2024073302A (ja) * 2022-11-17 2024-05-29 東京エレクトロン株式会社 プラズマ処理装置
US12531211B2 (en) 2023-11-17 2026-01-20 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Sulfur-containing molecules for high aspect ratio plasma etching processes

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JPH07147273A (ja) * 1993-11-24 1995-06-06 Tokyo Electron Ltd エッチング処理方法
JP2016039310A (ja) * 2014-08-08 2016-03-22 東京エレクトロン株式会社 多層膜をエッチングする方法

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JPH04354331A (ja) * 1991-05-31 1992-12-08 Sony Corp ドライエッチング方法
JPH07263415A (ja) * 1994-03-18 1995-10-13 Fujitsu Ltd 半導体装置の製造方法
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JP4653603B2 (ja) * 2005-09-13 2011-03-16 株式会社日立ハイテクノロジーズ プラズマエッチング方法
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JP2013030531A (ja) * 2011-07-27 2013-02-07 Central Glass Co Ltd ドライエッチング剤
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JP6211947B2 (ja) * 2013-07-31 2017-10-11 東京エレクトロン株式会社 半導体装置の製造方法
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JPH07147273A (ja) * 1993-11-24 1995-06-06 Tokyo Electron Ltd エッチング処理方法
JP2016039310A (ja) * 2014-08-08 2016-03-22 東京エレクトロン株式会社 多層膜をエッチングする方法

Also Published As

Publication number Publication date
TW201810429A (zh) 2018-03-16
JP6604911B2 (ja) 2019-11-13
JP2017228690A (ja) 2017-12-28
KR102584336B1 (ko) 2023-10-04
KR20180000692A (ko) 2018-01-03
US10692729B2 (en) 2020-06-23
US20170372916A1 (en) 2017-12-28

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