KR102584336B1 - 에칭 처리 방법 - Google Patents

에칭 처리 방법 Download PDF

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Publication number
KR102584336B1
KR102584336B1 KR1020170079056A KR20170079056A KR102584336B1 KR 102584336 B1 KR102584336 B1 KR 102584336B1 KR 1020170079056 A KR1020170079056 A KR 1020170079056A KR 20170079056 A KR20170079056 A KR 20170079056A KR 102584336 B1 KR102584336 B1 KR 102584336B1
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etching
gas
frequency power
containing gas
plasma
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KR20180000692A (ko
Inventor
진 쿠도
와타루 타카야마
마주 토무라
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도쿄엘렉트론가부시키가이샤
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    • H01L21/3065—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01L21/324—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
KR1020170079056A 2016-06-23 2017-06-22 에칭 처리 방법 Active KR102584336B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016124600A JP6604911B2 (ja) 2016-06-23 2016-06-23 エッチング処理方法
JPJP-P-2016-124600 2016-06-23

Publications (2)

Publication Number Publication Date
KR20180000692A KR20180000692A (ko) 2018-01-03
KR102584336B1 true KR102584336B1 (ko) 2023-10-04

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US (1) US10692729B2 (enExample)
JP (1) JP6604911B2 (enExample)
KR (1) KR102584336B1 (enExample)
TW (1) TWI731101B (enExample)

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JP7158252B2 (ja) * 2018-02-15 2022-10-21 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
US10811275B2 (en) * 2018-02-15 2020-10-20 Tokyo Electron Limited Plasma etching method and plasma etching apparatus
WO2019178030A1 (en) * 2018-03-16 2019-09-19 Lam Research Corporation Plasma etching chemistries of high aspect ratio features in dielectrics
JP2019179889A (ja) 2018-03-30 2019-10-17 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
TWI804638B (zh) * 2018-06-22 2023-06-11 日商關東電化工業股份有限公司 使用含硫原子之氣體分子之電漿蝕刻方法
KR102608957B1 (ko) 2018-08-27 2023-12-01 삼성전자주식회사 플라즈마 처리 장치
JP7229033B2 (ja) * 2019-02-01 2023-02-27 東京エレクトロン株式会社 基板処理方法及び基板処理装置
KR102904251B1 (ko) * 2019-02-18 2025-12-24 도쿄엘렉트론가부시키가이샤 에칭 방법
JP7222940B2 (ja) * 2019-02-18 2023-02-15 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
JP2020177958A (ja) * 2019-04-15 2020-10-29 東京エレクトロン株式会社 基板処理方法及び基板処理装置
TWI848120B (zh) * 2019-06-13 2024-07-11 日商東京威力科創股份有限公司 蝕刻方法以及蝕刻裝置
JP7413093B2 (ja) * 2019-07-18 2024-01-15 キオクシア株式会社 エッチング方法、半導体製造装置、および半導体装置の製造方法
US11651969B2 (en) * 2019-07-18 2023-05-16 Kioxia Corporation Etching method, semiconductor manufacturing apparatus, and method of manufacturing semiconductor device
US12125708B2 (en) * 2020-04-10 2024-10-22 Hitachi High-Tech Corporation Etching method
US11171012B1 (en) 2020-05-27 2021-11-09 Tokyo Electron Limited Method and apparatus for formation of protective sidewall layer for bow reduction
US11087989B1 (en) 2020-06-18 2021-08-10 Applied Materials, Inc. Cryogenic atomic layer etch with noble gases
TWI893186B (zh) * 2020-08-24 2025-08-11 日商東京威力科創股份有限公司 蝕刻方法及電漿處理裝置
JP7715462B2 (ja) * 2020-08-24 2025-07-30 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
WO2022041198A1 (zh) * 2020-08-31 2022-03-03 深圳大学 一种三维堆叠存储芯片的温度变化计算方法
JP7641170B2 (ja) * 2021-05-07 2025-03-06 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP7767024B2 (ja) * 2021-05-07 2025-11-11 東京エレクトロン株式会社 基板処理方法および基板処理装置
TW202301473A (zh) * 2021-06-15 2023-01-01 日商鎧俠股份有限公司 半導體製造裝置及半導體裝置之製造方法
US12123816B2 (en) * 2021-06-21 2024-10-22 Fei Company Vibration-free cryogenic cooling
KR20230111394A (ko) 2022-01-18 2023-07-25 삼성전자주식회사 저온 식각용 공정 가스, 플라즈마 식각 장치, 및 이들을 이용한 반도체 소자의 제조 방법
JP2024073302A (ja) * 2022-11-17 2024-05-29 東京エレクトロン株式会社 プラズマ処理装置
US12531211B2 (en) 2023-11-17 2026-01-20 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Sulfur-containing molecules for high aspect ratio plasma etching processes

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Also Published As

Publication number Publication date
TW201810429A (zh) 2018-03-16
KR20180000692A (ko) 2018-01-03
TWI731101B (zh) 2021-06-21
US10692729B2 (en) 2020-06-23
US20170372916A1 (en) 2017-12-28
JP6604911B2 (ja) 2019-11-13
JP2017228690A (ja) 2017-12-28

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