TWI716666B - 磁性穿隧接合元件、使用此之磁性記憶體及磁性穿隧接合元件之製造方法 - Google Patents

磁性穿隧接合元件、使用此之磁性記憶體及磁性穿隧接合元件之製造方法 Download PDF

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Publication number
TWI716666B
TWI716666B TW107103019A TW107103019A TWI716666B TW I716666 B TWI716666 B TW I716666B TW 107103019 A TW107103019 A TW 107103019A TW 107103019 A TW107103019 A TW 107103019A TW I716666 B TWI716666 B TW I716666B
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layer
magnetic
ferromagnetic
ferromagnetic layer
magnetization
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TW107103019A
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Chinese (zh)
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TW201911536A (zh
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三浦勝哉
山田将貴
濱村浩孝
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日商日立全球先端科技股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
TW107103019A 2017-08-08 2018-01-29 磁性穿隧接合元件、使用此之磁性記憶體及磁性穿隧接合元件之製造方法 TWI716666B (zh)

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JP2017-153003 2017-08-08
JP2017153003A JP7023637B2 (ja) 2017-08-08 2017-08-08 磁気トンネル接合素子の製造方法

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TW201911536A TW201911536A (zh) 2019-03-16
TWI716666B true TWI716666B (zh) 2021-01-21

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US (1) US11165015B2 (enExample)
JP (1) JP7023637B2 (enExample)
KR (1) KR102285125B1 (enExample)
TW (1) TWI716666B (enExample)

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CN110235201A (zh) * 2016-12-27 2019-09-13 艾沃思宾技术公司 包括在磁隧道结中的合成反铁磁体中的数据存储
CN109904309B (zh) * 2019-03-19 2023-04-18 中国科学院微电子研究所 一种多态磁存储器及其制造方法
CN112531106A (zh) * 2019-09-18 2021-03-19 中电海康集团有限公司 磁性隧道结的制备方法
US12063867B2 (en) * 2021-08-05 2024-08-13 International Business Machines Corporation Dual spacer for double magnetic tunnel junction devices
WO2025197974A1 (ja) * 2024-03-22 2025-09-25 国立大学法人東北大学 垂直磁化膜、垂直磁化磁気抵抗効果素子

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US20110133298A1 (en) * 2009-12-08 2011-06-09 Qualcomm Incorporated Spin-Transfer Switching Magnetic Element Utilizing a Composite Free Layer Comprising a Superparamagnetic Layer
US20140315329A1 (en) * 2012-08-14 2014-10-23 Everspin Technologies, Inc. Method of manufacturing a magnetoresistive-based device
TWI474472B (zh) * 2009-04-14 2015-02-21 Qualcomm Inc 磁性穿隧接面及其方法，以及使用其之磁性隨機存取記憶體
TWI512721B (zh) * 2012-06-19 2015-12-11 Micron Technology Inc 記憶體單元、半導體裝置結構、記憶體系統及製造方法
TWI514638B (zh) * 2010-03-29 2015-12-21 Qualcomm Inc 製造一磁性穿隧接面儲存元件
TWI542052B (zh) * 2012-09-13 2016-07-11 美光科技公司 形成記憶體單元及磁性記憶體單元結構的陣列之方法，以及相關之記憶體單元及記憶體單元結構
TWI565111B (zh) * 2013-06-21 2017-01-01 英特爾股份有限公司 磁性穿隧接面（ｍｔｊ）自旋霍爾磁性隨機存取記憶體（ｍｒａｍ）位元胞及陣列

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US7301801B2 (en) * 2005-10-28 2007-11-27 International Business Machines Corporation Tuned pinned layers for magnetic tunnel junctions with multicomponent free layers
JP2007266498A (ja) * 2006-03-29 2007-10-11 Toshiba Corp 磁気記録素子及び磁気メモリ
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JP5260040B2 (ja) 2007-12-19 2013-08-14 株式会社日立製作所 単一方向電流磁化反転磁気抵抗効果素子と磁気記録装置
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US6852550B2 (en) * 2002-08-29 2005-02-08 Micron Technology, Inc. MRAM sense layer area control
TWI474472B (zh) * 2009-04-14 2015-02-21 Qualcomm Inc 磁性穿隧接面及其方法，以及使用其之磁性隨機存取記憶體
US20110133298A1 (en) * 2009-12-08 2011-06-09 Qualcomm Incorporated Spin-Transfer Switching Magnetic Element Utilizing a Composite Free Layer Comprising a Superparamagnetic Layer
TWI514638B (zh) * 2010-03-29 2015-12-21 Qualcomm Inc 製造一磁性穿隧接面儲存元件
TWI512721B (zh) * 2012-06-19 2015-12-11 Micron Technology Inc 記憶體單元、半導體裝置結構、記憶體系統及製造方法
US20140315329A1 (en) * 2012-08-14 2014-10-23 Everspin Technologies, Inc. Method of manufacturing a magnetoresistive-based device
TWI542052B (zh) * 2012-09-13 2016-07-11 美光科技公司 形成記憶體單元及磁性記憶體單元結構的陣列之方法，以及相關之記憶體單元及記憶體單元結構
TWI565111B (zh) * 2013-06-21 2017-01-01 英特爾股份有限公司 磁性穿隧接面（ｍｔｊ）自旋霍爾磁性隨機存取記憶體（ｍｒａｍ）位元胞及陣列

Also Published As

Publication number Publication date
US20190051819A1 (en) 2019-02-14
JP2019033167A (ja) 2019-02-28
KR102285125B1 (ko) 2021-08-04
TW201911536A (zh) 2019-03-16
KR20190016420A (ko) 2019-02-18
JP7023637B2 (ja) 2022-02-22
US11165015B2 (en) 2021-11-02

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