JP7023637B2 - 磁気トンネル接合素子の製造方法 - Google Patents

磁気トンネル接合素子の製造方法 Download PDF

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Publication number
JP7023637B2
JP7023637B2 JP2017153003A JP2017153003A JP7023637B2 JP 7023637 B2 JP7023637 B2 JP 7023637B2 JP 2017153003 A JP2017153003 A JP 2017153003A JP 2017153003 A JP2017153003 A JP 2017153003A JP 7023637 B2 JP7023637 B2 JP 7023637B2
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layer
magnetic
ferromagnetic
ferromagnetic layer
laminated
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JP2019033167A (ja
JP2019033167A5 (enExample
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勝哉 三浦
将貴 山田
浩孝 濱村
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Hitachi High Tech Corp
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Hitachi High Tech Corp
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Priority to JP2017153003A priority Critical patent/JP7023637B2/ja
Priority to KR1020170181971A priority patent/KR102285125B1/ko
Priority to TW107103019A priority patent/TWI716666B/zh
Priority to US15/906,775 priority patent/US11165015B2/en
Publication of JP2019033167A publication Critical patent/JP2019033167A/ja
Publication of JP2019033167A5 publication Critical patent/JP2019033167A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
JP2017153003A 2017-08-08 2017-08-08 磁気トンネル接合素子の製造方法 Active JP7023637B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2017153003A JP7023637B2 (ja) 2017-08-08 2017-08-08 磁気トンネル接合素子の製造方法
KR1020170181971A KR102285125B1 (ko) 2017-08-08 2017-12-28 자기 터널 접합 소자, 그것을 사용한 자기 메모리 및 자기 터널 접합 소자의 제조 방법
TW107103019A TWI716666B (zh) 2017-08-08 2018-01-29 磁性穿隧接合元件、使用此之磁性記憶體及磁性穿隧接合元件之製造方法
US15/906,775 US11165015B2 (en) 2017-08-08 2018-02-27 Magnetic tunnel junction device, magnetoresistive random access memory using same and manufacturing method of magnetic tunnel junction device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017153003A JP7023637B2 (ja) 2017-08-08 2017-08-08 磁気トンネル接合素子の製造方法

Publications (3)

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JP2019033167A JP2019033167A (ja) 2019-02-28
JP2019033167A5 JP2019033167A5 (enExample) 2020-06-11
JP7023637B2 true JP7023637B2 (ja) 2022-02-22

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JP2017153003A Active JP7023637B2 (ja) 2017-08-08 2017-08-08 磁気トンネル接合素子の製造方法

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US (1) US11165015B2 (enExample)
JP (1) JP7023637B2 (enExample)
KR (1) KR102285125B1 (enExample)
TW (1) TWI716666B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110235201A (zh) * 2016-12-27 2019-09-13 艾沃思宾技术公司 包括在磁隧道结中的合成反铁磁体中的数据存储
CN109904309B (zh) * 2019-03-19 2023-04-18 中国科学院微电子研究所 一种多态磁存储器及其制造方法
CN112531106A (zh) * 2019-09-18 2021-03-19 中电海康集团有限公司 磁性隧道结的制备方法
US12063867B2 (en) * 2021-08-05 2024-08-13 International Business Machines Corporation Dual spacer for double magnetic tunnel junction devices
WO2025197974A1 (ja) * 2024-03-22 2025-09-25 国立大学法人東北大学 垂直磁化膜、垂直磁化磁気抵抗効果素子

Citations (5)

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Publication number Priority date Publication date Assignee Title
JP2009514211A (ja) 2005-10-28 2009-04-02 インターナショナル・ビジネス・マシーンズ・コーポレーション マルチコンポーネント自由層を有する磁気トンネル・ジャンクションのための調整されたピン留め層
JP2013093349A (ja) 2011-10-24 2013-05-16 Toshiba Corp 磁気記憶素子
JP2014229758A (ja) 2013-05-22 2014-12-08 ソニー株式会社 半導体装置およびその製造方法
JP2017059690A (ja) 2015-09-16 2017-03-23 株式会社東芝 磁気素子及び記憶装置
US20170222132A1 (en) 2016-01-28 2017-08-03 Spin Transfer Technologies, Inc. Memory cell having magnetic tunnel junction and thermal stability enhancement layer

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US6781173B2 (en) * 2002-08-29 2004-08-24 Micron Technology, Inc. MRAM sense layer area control
JP2006261592A (ja) * 2005-03-18 2006-09-28 Fujitsu Ltd 磁気抵抗効果素子及びその製造方法
JP2007266498A (ja) * 2006-03-29 2007-10-11 Toshiba Corp 磁気記録素子及び磁気メモリ
JP2008283018A (ja) * 2007-05-11 2008-11-20 Tdk Corp トンネル型磁気検出素子及びその製造方法
JP5157268B2 (ja) 2007-06-13 2013-03-06 株式会社日立製作所 スピン蓄積磁化反転型のメモリ素子及びスピンｒａｍ
JP5260040B2 (ja) 2007-12-19 2013-08-14 株式会社日立製作所 単一方向電流磁化反転磁気抵抗効果素子と磁気記録装置
US8223533B2 (en) * 2008-09-26 2012-07-17 Kabushiki Kaisha Toshiba Magnetoresistive effect device and magnetic memory
US8344433B2 (en) * 2009-04-14 2013-01-01 Qualcomm Incorporated Magnetic tunnel junction (MTJ) and methods, and magnetic random access memory (MRAM) employing same
US8362580B2 (en) * 2009-12-08 2013-01-29 Qualcomm Incorporated Spin-transfer switching magnetic element utilizing a composite free layer comprising a superparamagnetic layer
US8981502B2 (en) * 2010-03-29 2015-03-17 Qualcomm Incorporated Fabricating a magnetic tunnel junction storage element
JP5725735B2 (ja) 2010-06-04 2015-05-27 株式会社日立製作所 磁気抵抗効果素子及び磁気メモリ
JP5492144B2 (ja) 2011-05-27 2014-05-14 株式会社日立製作所 垂直磁化磁気抵抗効果素子及び磁気メモリ
US9054030B2 (en) * 2012-06-19 2015-06-09 Micron Technology, Inc. Memory cells, semiconductor device structures, memory systems, and methods of fabrication
US8747680B1 (en) * 2012-08-14 2014-06-10 Everspin Technologies, Inc. Method of manufacturing a magnetoresistive-based device
US9231191B2 (en) * 2012-08-20 2016-01-05 Industrial Technology Research Institute Magnetic tunnel junction device and method of making same
US9373775B2 (en) * 2012-09-13 2016-06-21 Micron Technology, Inc. Methods of forming magnetic memory cells
JP5571142B2 (ja) 2012-09-25 2014-08-13 株式会社東芝 磁気メモリ
KR20160022809A (ko) * 2013-06-21 2016-03-02 인텔 코포레이션 Mtj 스핀 홀 mram 비트-셀 및 어레이
JP5752831B2 (ja) 2014-05-07 2015-07-22 株式会社東芝 磁気メモリ
US9576636B1 (en) * 2015-04-03 2017-02-21 Everspin Technologies, Inc. Magnetic memory having ROM-like storage and method therefore
JP2018073913A (ja) * 2016-10-26 2018-05-10 株式会社デンソー 磁気センサおよびその製造方法
CN110235201A (zh) * 2016-12-27 2019-09-13 艾沃思宾技术公司 包括在磁隧道结中的合成反铁磁体中的数据存储
US10794968B2 (en) * 2017-08-24 2020-10-06 Everspin Technologies, Inc. Magnetic field sensor and method of manufacture

Patent Citations (5)

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Publication number Priority date Publication date Assignee Title
JP2009514211A (ja) 2005-10-28 2009-04-02 インターナショナル・ビジネス・マシーンズ・コーポレーション マルチコンポーネント自由層を有する磁気トンネル・ジャンクションのための調整されたピン留め層
JP2013093349A (ja) 2011-10-24 2013-05-16 Toshiba Corp 磁気記憶素子
JP2014229758A (ja) 2013-05-22 2014-12-08 ソニー株式会社 半導体装置およびその製造方法
JP2017059690A (ja) 2015-09-16 2017-03-23 株式会社東芝 磁気素子及び記憶装置
US20170222132A1 (en) 2016-01-28 2017-08-03 Spin Transfer Technologies, Inc. Memory cell having magnetic tunnel junction and thermal stability enhancement layer

Also Published As

Publication number Publication date
US20190051819A1 (en) 2019-02-14
KR20190016420A (ko) 2019-02-18
US11165015B2 (en) 2021-11-02
TW201911536A (zh) 2019-03-16
JP2019033167A (ja) 2019-02-28
TWI716666B (zh) 2021-01-21
KR102285125B1 (ko) 2021-08-04

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