KR102285125B1 - 자기 터널 접합 소자, 그것을 사용한 자기 메모리 및 자기 터널 접합 소자의 제조 방법 - Google Patents

자기 터널 접합 소자, 그것을 사용한 자기 메모리 및 자기 터널 접합 소자의 제조 방법 Download PDF

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KR102285125B1
KR102285125B1 KR1020170181971A KR20170181971A KR102285125B1 KR 102285125 B1 KR102285125 B1 KR 102285125B1 KR 1020170181971 A KR1020170181971 A KR 1020170181971A KR 20170181971 A KR20170181971 A KR 20170181971A KR 102285125 B1 KR102285125 B1 KR 102285125B1
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ferromagnetic
magnetic
ferromagnetic layer
multilayer film
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KR20190016420A (ko
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가츠야 미우라
마사키 야마다
히로타카 하마무라
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주식회사 히타치하이테크
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H01L43/08—
    • H01L43/02—
    • H01L43/12—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
KR1020170181971A 2017-08-08 2017-12-28 자기 터널 접합 소자, 그것을 사용한 자기 메모리 및 자기 터널 접합 소자의 제조 방법 Active KR102285125B1 (ko)

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JPJP-P-2017-153003 2017-08-08
JP2017153003A JP7023637B2 (ja) 2017-08-08 2017-08-08 磁気トンネル接合素子の製造方法

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KR20190016420A KR20190016420A (ko) 2019-02-18
KR102285125B1 true KR102285125B1 (ko) 2021-08-04

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US (1) US11165015B2 (enExample)
JP (1) JP7023637B2 (enExample)
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CN110235201A (zh) * 2016-12-27 2019-09-13 艾沃思宾技术公司 包括在磁隧道结中的合成反铁磁体中的数据存储
CN109904309B (zh) * 2019-03-19 2023-04-18 中国科学院微电子研究所 一种多态磁存储器及其制造方法
CN112531106A (zh) * 2019-09-18 2021-03-19 中电海康集团有限公司 磁性隧道结的制备方法
US12063867B2 (en) * 2021-08-05 2024-08-13 International Business Machines Corporation Dual spacer for double magnetic tunnel junction devices
WO2025197974A1 (ja) * 2024-03-22 2025-09-25 国立大学法人東北大学 垂直磁化膜、垂直磁化磁気抵抗効果素子

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JP2007266498A (ja) * 2006-03-29 2007-10-11 Toshiba Corp 磁気記録素子及び磁気メモリ
JP5157268B2 (ja) 2007-06-13 2013-03-06 株式会社日立製作所 スピン蓄積磁化反転型のメモリ素子及びスピンｒａｍ
JP5260040B2 (ja) 2007-12-19 2013-08-14 株式会社日立製作所 単一方向電流磁化反転磁気抵抗効果素子と磁気記録装置
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JP2008283018A (ja) * 2007-05-11 2008-11-20 Tdk Corp トンネル型磁気検出素子及びその製造方法

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US20190051819A1 (en) 2019-02-14
JP2019033167A (ja) 2019-02-28
TW201911536A (zh) 2019-03-16
KR20190016420A (ko) 2019-02-18
JP7023637B2 (ja) 2022-02-22
US11165015B2 (en) 2021-11-02
TWI716666B (zh) 2021-01-21

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