JP2019033167A5 - - Google Patents

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Publication number
JP2019033167A5
JP2019033167A5 JP2017153003A JP2017153003A JP2019033167A5 JP 2019033167 A5 JP2019033167 A5 JP 2019033167A5 JP 2017153003 A JP2017153003 A JP 2017153003A JP 2017153003 A JP2017153003 A JP 2017153003A JP 2019033167 A5 JP2019033167 A5 JP 2019033167A5
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JP
Japan
Prior art keywords
layer
magnetic
ferromagnetic
tunnel junction
ferromagnetic layer
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JP2017153003A
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English (en)
Japanese (ja)
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JP2019033167A (ja
JP7023637B2 (ja
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Priority to JP2017153003A priority Critical patent/JP7023637B2/ja
Priority claimed from JP2017153003A external-priority patent/JP7023637B2/ja
Priority to KR1020170181971A priority patent/KR102285125B1/ko
Priority to TW107103019A priority patent/TWI716666B/zh
Priority to US15/906,775 priority patent/US11165015B2/en
Publication of JP2019033167A publication Critical patent/JP2019033167A/ja
Publication of JP2019033167A5 publication Critical patent/JP2019033167A5/ja
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Publication of JP7023637B2 publication Critical patent/JP7023637B2/ja
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JP2017153003A 2017-08-08 2017-08-08 磁気トンネル接合素子の製造方法 Active JP7023637B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2017153003A JP7023637B2 (ja) 2017-08-08 2017-08-08 磁気トンネル接合素子の製造方法
KR1020170181971A KR102285125B1 (ko) 2017-08-08 2017-12-28 자기 터널 접합 소자, 그것을 사용한 자기 메모리 및 자기 터널 접합 소자의 제조 방법
TW107103019A TWI716666B (zh) 2017-08-08 2018-01-29 磁性穿隧接合元件、使用此之磁性記憶體及磁性穿隧接合元件之製造方法
US15/906,775 US11165015B2 (en) 2017-08-08 2018-02-27 Magnetic tunnel junction device, magnetoresistive random access memory using same and manufacturing method of magnetic tunnel junction device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017153003A JP7023637B2 (ja) 2017-08-08 2017-08-08 磁気トンネル接合素子の製造方法

Publications (3)

Publication Number Publication Date
JP2019033167A JP2019033167A (ja) 2019-02-28
JP2019033167A5 true JP2019033167A5 (enExample) 2020-06-11
JP7023637B2 JP7023637B2 (ja) 2022-02-22

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ID=65275889

Family Applications (1)

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JP2017153003A Active JP7023637B2 (ja) 2017-08-08 2017-08-08 磁気トンネル接合素子の製造方法

Country Status (4)

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US (1) US11165015B2 (enExample)
JP (1) JP7023637B2 (enExample)
KR (1) KR102285125B1 (enExample)
TW (1) TWI716666B (enExample)

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CN110235201A (zh) * 2016-12-27 2019-09-13 艾沃思宾技术公司 包括在磁隧道结中的合成反铁磁体中的数据存储
CN109904309B (zh) * 2019-03-19 2023-04-18 中国科学院微电子研究所 一种多态磁存储器及其制造方法
CN112531106A (zh) * 2019-09-18 2021-03-19 中电海康集团有限公司 磁性隧道结的制备方法
US12063867B2 (en) * 2021-08-05 2024-08-13 International Business Machines Corporation Dual spacer for double magnetic tunnel junction devices
WO2025197974A1 (ja) * 2024-03-22 2025-09-25 国立大学法人東北大学 垂直磁化膜、垂直磁化磁気抵抗効果素子

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JP2006261592A (ja) 2005-03-18 2006-09-28 Fujitsu Ltd 磁気抵抗効果素子及びその製造方法
US7301801B2 (en) * 2005-10-28 2007-11-27 International Business Machines Corporation Tuned pinned layers for magnetic tunnel junctions with multicomponent free layers
JP2007266498A (ja) * 2006-03-29 2007-10-11 Toshiba Corp 磁気記録素子及び磁気メモリ
JP2008283018A (ja) * 2007-05-11 2008-11-20 Tdk Corp トンネル型磁気検出素子及びその製造方法
JP5157268B2 (ja) 2007-06-13 2013-03-06 株式会社日立製作所 スピン蓄積磁化反転型のメモリ素子及びスピンｒａｍ
JP5260040B2 (ja) 2007-12-19 2013-08-14 株式会社日立製作所 単一方向電流磁化反転磁気抵抗効果素子と磁気記録装置
US8223533B2 (en) * 2008-09-26 2012-07-17 Kabushiki Kaisha Toshiba Magnetoresistive effect device and magnetic memory
US8344433B2 (en) * 2009-04-14 2013-01-01 Qualcomm Incorporated Magnetic tunnel junction (MTJ) and methods, and magnetic random access memory (MRAM) employing same
US8362580B2 (en) * 2009-12-08 2013-01-29 Qualcomm Incorporated Spin-transfer switching magnetic element utilizing a composite free layer comprising a superparamagnetic layer
US8981502B2 (en) * 2010-03-29 2015-03-17 Qualcomm Incorporated Fabricating a magnetic tunnel junction storage element
JP5725735B2 (ja) 2010-06-04 2015-05-27 株式会社日立製作所 磁気抵抗効果素子及び磁気メモリ
JP5492144B2 (ja) 2011-05-27 2014-05-14 株式会社日立製作所 垂直磁化磁気抵抗効果素子及び磁気メモリ
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