TWI712106B - 用於製作包含中介層之半導體結構之方法 - Google Patents

用於製作包含中介層之半導體結構之方法 Download PDF

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TWI712106B
TWI712106B TW106117418A TW106117418A TWI712106B TW I712106 B TWI712106 B TW I712106B TW 106117418 A TW106117418 A TW 106117418A TW 106117418 A TW106117418 A TW 106117418A TW I712106 B TWI712106 B TW I712106B
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temporary support
layer
semiconductor
contact pads
item
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TW106117418A
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TW201742189A (zh
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璧顏 阮
魯多維克 伊卡諾
那地雅 班穆罕默德
克里斯多夫 馬勒維
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法商索泰克公司
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    • H10P72/7438—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Wire Bonding (AREA)
TW106117418A 2016-05-30 2017-05-25 用於製作包含中介層之半導體結構之方法 TWI712106B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1654831 2016-05-30
FR1654831A FR3051971B1 (fr) 2016-05-30 2016-05-30 Procede de fabrication d'une structure semi-conductrice comprenant un interposeur

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TW201742189A TW201742189A (zh) 2017-12-01
TWI712106B true TWI712106B (zh) 2020-12-01

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US (1) US11114314B2 (https=)
KR (1) KR102397140B1 (https=)
CN (1) CN109196627B (https=)
DE (1) DE112017002718T5 (https=)
FR (1) FR3051971B1 (https=)
SG (2) SG11201810104VA (https=)
TW (1) TWI712106B (https=)
WO (1) WO2017207390A1 (https=)

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TW202038266A (zh) * 2018-11-26 2020-10-16 瑞典商斯莫勒科技公司 具有離散的能量儲存構件之半導體組件

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US20100109169A1 (en) * 2008-04-29 2010-05-06 United Test And Assembly Center Ltd Semiconductor package and method of making the same
US20130214423A1 (en) * 2011-03-31 2013-08-22 Soitec Methods for fabrication of semiconductor structures including interposers with conductive vias, and related structures and devices
US20140339706A1 (en) * 2013-05-17 2014-11-20 Nvidia Corporation Integrated circuit package with an interposer formed from a reusable carrier substrate

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FR2748851B1 (fr) * 1996-05-15 1998-08-07 Commissariat Energie Atomique Procede de realisation d'une couche mince de materiau semiconducteur
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US11114314B2 (en) 2021-09-07
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DE112017002718T5 (de) 2019-02-28
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