KR102397140B1 - 임의의 관통 비아가 없는 인터포저를 포함하는 반도체 구조의 제조 방법 - Google Patents
임의의 관통 비아가 없는 인터포저를 포함하는 반도체 구조의 제조 방법 Download PDFInfo
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- KR102397140B1 KR102397140B1 KR1020187034604A KR20187034604A KR102397140B1 KR 102397140 B1 KR102397140 B1 KR 102397140B1 KR 1020187034604 A KR1020187034604 A KR 1020187034604A KR 20187034604 A KR20187034604 A KR 20187034604A KR 102397140 B1 KR102397140 B1 KR 102397140B1
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Wire Bonding (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1654831 | 2016-05-30 | ||
| FR1654831A FR3051971B1 (fr) | 2016-05-30 | 2016-05-30 | Procede de fabrication d'une structure semi-conductrice comprenant un interposeur |
| PCT/EP2017/062556 WO2017207390A1 (en) | 2016-05-30 | 2017-05-24 | Method for fabrication of a semiconductor structure including an interposer free from any through via |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20190015707A KR20190015707A (ko) | 2019-02-14 |
| KR102397140B1 true KR102397140B1 (ko) | 2022-05-16 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020187034604A Active KR102397140B1 (ko) | 2016-05-30 | 2017-05-24 | 임의의 관통 비아가 없는 인터포저를 포함하는 반도체 구조의 제조 방법 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US11114314B2 (https=) |
| KR (1) | KR102397140B1 (https=) |
| CN (1) | CN109196627B (https=) |
| DE (1) | DE112017002718T5 (https=) |
| FR (1) | FR3051971B1 (https=) |
| SG (2) | SG11201810104VA (https=) |
| TW (1) | TWI712106B (https=) |
| WO (1) | WO2017207390A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW202038266A (zh) * | 2018-11-26 | 2020-10-16 | 瑞典商斯莫勒科技公司 | 具有離散的能量儲存構件之半導體組件 |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030077885A1 (en) | 2000-05-30 | 2003-04-24 | Bernard Aspar | Embrittled substrate and method for making same |
| US20030219969A1 (en) | 2002-05-24 | 2003-11-27 | Fujitsu Limited | Semiconductor device and manufacturing method thereof |
| US20100109169A1 (en) * | 2008-04-29 | 2010-05-06 | United Test And Assembly Center Ltd | Semiconductor package and method of making the same |
| JP2010114426A (ja) * | 2008-09-24 | 2010-05-20 | Commiss Energ Atom | 基板上にチップを移動する方法 |
| US20130214423A1 (en) | 2011-03-31 | 2013-08-22 | Soitec | Methods for fabrication of semiconductor structures including interposers with conductive vias, and related structures and devices |
| US20130252383A1 (en) | 2012-03-21 | 2013-09-26 | Siliconware Precision Industries Co., Ltd. | Fabrication method of wafer level semiconductor package and fabrication method of wafer level packaging substrate |
| US20140339706A1 (en) * | 2013-05-17 | 2014-11-20 | Nvidia Corporation | Integrated circuit package with an interposer formed from a reusable carrier substrate |
| US20160133496A1 (en) | 2014-09-05 | 2016-05-12 | Skorpios Technologies, Inc. | Semiconductor bonding with compliant resin and utilizing hydrogen implantation for transfer-wafer removal |
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| FR2748851B1 (fr) * | 1996-05-15 | 1998-08-07 | Commissariat Energie Atomique | Procede de realisation d'une couche mince de materiau semiconducteur |
| EP0853337B1 (en) * | 1996-07-12 | 2004-09-29 | Fujitsu Limited | Method for manufacturing semiconductor device |
| JP3809733B2 (ja) * | 1998-02-25 | 2006-08-16 | セイコーエプソン株式会社 | 薄膜トランジスタの剥離方法 |
| JP2001102523A (ja) * | 1999-09-28 | 2001-04-13 | Sony Corp | 薄膜デバイスおよびその製造方法 |
| JP4651924B2 (ja) * | 2003-09-18 | 2011-03-16 | シャープ株式会社 | 薄膜半導体装置および薄膜半導体装置の製造方法 |
| FR2898430B1 (fr) | 2006-03-13 | 2008-06-06 | Soitec Silicon On Insulator | Procede de realisation d'une structure comprenant au moins une couche mince en materiau amorphe obtenue par epitaxie sur un substrat support et structure obtenue suivant ledit procede |
| FR2928031B1 (fr) | 2008-02-25 | 2010-06-11 | Soitec Silicon On Insulator | Procede de transfert d'une couche mince sur un substrat support. |
| US8728863B2 (en) | 2011-08-09 | 2014-05-20 | Soitec | Methods of forming bonded semiconductor structures including interconnect layers having one or more of electrical, optical, and fluidic interconnects therein, and bonded semiconductor structures formed using such methods |
| KR101639989B1 (ko) | 2011-12-22 | 2016-07-15 | 인텔 코포레이션 | 윈도우 인터포저를 갖는 3d 집적 회로 패키지 |
| US8685761B2 (en) * | 2012-02-02 | 2014-04-01 | Harris Corporation | Method for making a redistributed electronic device using a transferrable redistribution layer |
| US8963285B2 (en) * | 2013-03-08 | 2015-02-24 | Infineon Technologies Ag | Semiconductor device and method of manufacturing thereof |
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- 2017-05-24 WO PCT/EP2017/062556 patent/WO2017207390A1/en not_active Ceased
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- 2017-05-24 CN CN201780032360.1A patent/CN109196627B/zh active Active
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| US20030077885A1 (en) | 2000-05-30 | 2003-04-24 | Bernard Aspar | Embrittled substrate and method for making same |
| US7498245B2 (en) | 2000-05-30 | 2009-03-03 | Commissariat A L'energie Atomique | Embrittled substrate and method for making same |
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| US20130214423A1 (en) | 2011-03-31 | 2013-08-22 | Soitec | Methods for fabrication of semiconductor structures including interposers with conductive vias, and related structures and devices |
| US20130252383A1 (en) | 2012-03-21 | 2013-09-26 | Siliconware Precision Industries Co., Ltd. | Fabrication method of wafer level semiconductor package and fabrication method of wafer level packaging substrate |
| US20140339706A1 (en) * | 2013-05-17 | 2014-11-20 | Nvidia Corporation | Integrated circuit package with an interposer formed from a reusable carrier substrate |
| US20160133496A1 (en) | 2014-09-05 | 2016-05-12 | Skorpios Technologies, Inc. | Semiconductor bonding with compliant resin and utilizing hydrogen implantation for transfer-wafer removal |
Also Published As
| Publication number | Publication date |
|---|---|
| US20200328094A1 (en) | 2020-10-15 |
| WO2017207390A1 (en) | 2017-12-07 |
| FR3051971A1 (https=) | 2017-12-01 |
| SG11201810104VA (en) | 2018-12-28 |
| US11114314B2 (en) | 2021-09-07 |
| KR20190015707A (ko) | 2019-02-14 |
| DE112017002718T5 (de) | 2019-02-28 |
| SG10201913072VA (en) | 2020-03-30 |
| CN109196627A (zh) | 2019-01-11 |
| TWI712106B (zh) | 2020-12-01 |
| FR3051971B1 (fr) | 2019-12-13 |
| TW201742189A (zh) | 2017-12-01 |
| CN109196627B (zh) | 2023-08-08 |
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