CN109196627B - 包含无任何贯通孔的内插层的半导体结构的制造方法 - Google Patents

包含无任何贯通孔的内插层的半导体结构的制造方法 Download PDF

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CN109196627B
CN109196627B CN201780032360.1A CN201780032360A CN109196627B CN 109196627 B CN109196627 B CN 109196627B CN 201780032360 A CN201780032360 A CN 201780032360A CN 109196627 B CN109196627 B CN 109196627B
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layer
temporary support
interconnect layer
contact pads
chip
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CN109196627A (zh
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比什-因·阮
卢多维克·埃卡尔诺
纳迪娅·本默罕默德
C·马勒维尔
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Soitec SA
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Wire Bonding (AREA)
CN201780032360.1A 2016-05-30 2017-05-24 包含无任何贯通孔的内插层的半导体结构的制造方法 Active CN109196627B (zh)

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Application Number Priority Date Filing Date Title
FR1654831 2016-05-30
FR1654831A FR3051971B1 (fr) 2016-05-30 2016-05-30 Procede de fabrication d'une structure semi-conductrice comprenant un interposeur
PCT/EP2017/062556 WO2017207390A1 (en) 2016-05-30 2017-05-24 Method for fabrication of a semiconductor structure including an interposer free from any through via

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CN109196627A CN109196627A (zh) 2019-01-11
CN109196627B true CN109196627B (zh) 2023-08-08

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US (1) US11114314B2 (https=)
KR (1) KR102397140B1 (https=)
CN (1) CN109196627B (https=)
DE (1) DE112017002718T5 (https=)
FR (1) FR3051971B1 (https=)
SG (2) SG11201810104VA (https=)
TW (1) TWI712106B (https=)
WO (1) WO2017207390A1 (https=)

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TW202038266A (zh) * 2018-11-26 2020-10-16 瑞典商斯莫勒科技公司 具有離散的能量儲存構件之半導體組件

Citations (4)

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US20030077885A1 (en) * 2000-05-30 2003-04-24 Bernard Aspar Embrittled substrate and method for making same
US20100075461A1 (en) * 2008-09-24 2010-03-25 Commissariat A L'energie Atomique Method for transferring chips onto a substrate
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