TWI703627B - 基板搬運裝置、基板處理裝置以及結露抑制方法 - Google Patents

基板搬運裝置、基板處理裝置以及結露抑制方法 Download PDF

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TWI703627B
TWI703627B TW106111036A TW106111036A TWI703627B TW I703627 B TWI703627 B TW I703627B TW 106111036 A TW106111036 A TW 106111036A TW 106111036 A TW106111036 A TW 106111036A TW I703627 B TWI703627 B TW I703627B
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鈴木憲一
小菅隆一
斎藤賢一郎
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日商荏原製作所股份有限公司
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Abstract

本案提供一種能抑制結露產生的基板搬運裝置、包括該基板搬運裝置的基板處理裝置、以及抑制在基板搬運裝置產生結露的結露抑制方法。該基板搬運裝置包括：基板把持部(301a、301b)，該基板把持部(301a、301b)對基板進行把持；框體(300)；驅動機構(302)，該驅動機構(302)的至少一部分設於所述框體(300)內，並使用空氣對所述基板把持部(301a、301b)進行驅動。所述驅動機構(302)能向所述框體(300)內供給空氣。

Description

基板搬運裝置、基板處理裝置以及結露抑制方法
本發明涉及對基板進行搬運的基板搬運裝置、包括該基板搬運裝置的基板處理裝置、以及抑制在基板搬運裝置產生結露的結露抑制方法。
對半導體晶片等基板進行研磨的基板處理裝置除了研磨單元之外，還由對研磨後的基板進行清洗的清洗單元、對清洗後的基板進行乾燥的乾燥單元、在單元之間搬運基板的搬運機構等構成。
然而，在基板處理裝置內，為了對基板進行保濕而供給有沖洗水。當供給來的沖洗水施加於搬運機構時，恐怕會在搬運機構產生結露而導致搬運機構不能正常動作，從而給搬運造成障礙。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本特開第2001-135604號公報
[專利文獻2]日本特許第5188952號公報
本發明是鑒於上述問題點而做出的，本發明的技術問題在於提供能對抑制結露的產生的基板搬運裝置、包括該基板搬運裝置的基板處理裝置、以及能抑制在基板搬運裝置產生結露的結露抑制方法。
根據本發明的一技術方案，提供一種基板搬運裝置，該基板搬運裝置包括：基板把持部，該基板把持部對基板進行把持；框體；驅動機構，該驅動機構的至少一部分設於所述框體內，並使用空氣對所述基板把持部進行驅動，所述驅動機構能向所述框體內供給空氣。
通過向框體內供給空氣，能夠抑制結露產生於框體。
也可以採用以下結構：所述驅動機構具有配管，該配管的至少一部分設於所述框體內，所述配管供給用於驅動所述基板把持部的空氣，並向所述框體內供給空氣。
另外，也可以採用以下結構：所述基板把持部包括能打開關閉的一對支承臂，所述驅動機構具有：氣缸，該氣缸設於所述框體內，並利用空氣使所述一對支承臂進行打開關閉；以及配管，該配管向所述氣缸供給空氣。
也可以採用以下結構：所述配管包括：第一配管，該第一配管在所述基板把持部把持基板時被加壓；以及第二配管，該第二配管在所述基板把持部未把持基板時被加壓，從所述第二配管向所述框體內供給空氣。
也可以採用以下結構：基板搬運裝置包括設於所述配管的節流孔。
也可以採用以下結構：基板搬運裝置包括設於所述配管的篩檢程式， 經由所述篩檢程式向所述框體內供給空氣。
根據本發明的另一技術方案，提供一種基板處理裝置，該基板處理裝置包括：研磨單元、清洗單元及乾燥單元；以及所述基板搬運機構，所述基板搬運機構在各單元之間搬運基板。
另外，根據本發明的另一技術方案，提供一種抑制結露產生於基板搬運裝置的結露抑制方法，該方法也將用於驅動對基板進行把持的基板把持部的空氣供給至所述基板搬運裝置的框體。
通過供給空氣，能夠抑制結露產生。
3A~3D:研磨單元
190、192:清洗單元
194:乾燥單元
12:擺動輸送機
170:把持機構
300:框體
301a、301b:可動臂
302:開閉驅動機構
303a、303b:支承臂
304a、304b:卡盤
41a、41b:氣缸
42a、42b:空氣配管
43:壓力控制部
44:節流孔
45:篩檢程式
圖1是表示基板處理裝置的示意結構的圖。圖2是表示一實施方式的擺動輸送機12的結構的立體圖。
圖3是把持機構170的俯視圖。
圖4A是把持機構170的主視圖。
圖4B是把持機構170的主視圖。
圖5是圖4A的沿A-A’的剖視圖。
圖6是表示開閉驅動機構302的示意結構的示意圖。
圖7是對使可動臂301分離的情況下的開閉驅動機構302的動作進行說明的圖。
圖8是對使可動臂301接近的情況下的開閉驅動機構302的動作進行說明的圖。
圖9A是對把持基板時的把持機構170的動作進行說明的圖。
圖9B是對把持基板時的把持機構170的動作進行說明的圖。
圖9C是對把持基板時的把持機構170的動作進行說明的圖。
下面，參照附圖對本發明的實施方式進行具體說明。
圖1是表示基板處理裝置的示意結構的圖。如圖1所示，該基板處理裝置包括一個大致矩形的外殼1，該外殼1的內部通過隔壁1a、1b被劃分為裝載/卸載部2、研磨部3以及清洗部4。另外，基板處理裝置具有控制部5，該控制部5控制基板處理動作。
裝載/卸載部2包括前裝載部20，該前裝載部20供儲存多塊基板(例如半導體晶片)的晶片盒載置。在該裝載/卸載部2中沿著前裝載部20的排列方向敷設有行駛機構21，該行駛機構21上設置有能沿著晶片盒的排列方向移動的一台搬運機器人(裝載器)22。通過在行駛機構21上移動，搬運機器人22能夠訪問搭載於前裝載部20的晶片盒。
研磨部3是對基板進行研磨(平坦化)的區域，研磨部3包括第一研磨單元3A、第二研磨單元3B、第三研磨單元3C、第四研磨單元3D。
清洗部4是對研磨後的基板進行清洗以及乾燥的區域，清洗部4包括：第一清洗單元190及第二清洗單元192，該第一清洗單元190及第二清洗單元192對基板進行清洗；乾燥單元194，該乾燥單元194對清洗後的基板進行乾燥；第一搬運單元191，該第一搬運單元191在第一清洗單元190以及第二清洗單元192之間搬運基板；以及第二搬運單元193，該第二搬運單元193在第二清洗單元192以及乾燥單元194之間搬運基板。
接著，對基板的搬運進行說明。基板處理裝置包括：第一線性輸送機6及第二線性輸送機7，該第一線性輸送機6及第二線性輸送機7在外殼1的長度方向上搬運基板；升降機11；以及擺動輸送機12，該擺動輸送機12具有對基板的正反面進行反轉的作用，且可以搖動。
升降機11配置於後述的第一搬運位置TP1，並從搬運機器人22接收基板。即，在隔壁1a設有位於升降機11和搬運機器人22之間的閘門(未圖示)，當搬運基板時，閘門打開以將基板從搬運機器人22轉移至升降機11。基板經由該升降機11從搬運機器人22轉移至第一線性輸送機6。
第一線性輸送機6以與第一研磨單元3A以及第二研磨單元3B相鄰的方式配置。該第一線性輸送機6在沿著研磨單元3A、3B排列方向的四個搬運位置(第一搬運位置TP1、第二搬運位置TP2、第三搬運位置TP3、第四搬運位置TP4)之間搬運基板。
即，利用第一線性輸送機6將基板搬運至研磨單元3A、3B。 更具體而言，在第二搬運位置TP2，基板被從第一線性輸送機6轉移至第一研磨單元3A。另外，在第三搬運位置TP3，基板被從第一線性輸送機6轉移至第二研磨單元3B。
擺動輸送機12配置於第一線性輸送機6、第二線性輸送機7、以及清洗部4之間。基板從第一線性輸送機6朝第二線性輸送機7的轉移是利用擺動輸送機12進行的。
第二線性輸送機7以與第三研磨單元3C以及第四研磨單元3D相鄰的方式配置。該第二線性輸送機7是在沿著研磨單元3C、3D排列方向的三個搬運位置(第五搬運位置TP5、第六搬運位置TP6、第七搬運位置 TP7)之間搬運基板的機構。
即，利用第二線性輸送機7將基板搬運至研磨單元3C、3D。 更具體而言，在第六搬運位置TP6，基板被從第二線性輸送機7轉移至第三研磨單元3C。另外，在第七搬運位置TP7，基板被從第二線性輸送機7轉移至第四研磨單元3D。
另外，研磨部3中被研磨後的基板利用擺動輸送機12從第一線性輸送機6(或第二線性輸送機7)轉移至臨時載置台180，並經由第一搬運單元191而被搬運到清洗部4。在隔壁1b設有位於臨時載置台180和第一搬運單元191之間的閘門(未圖示)，當搬運基板時，閘門打開，第一搬運單元191從臨時載置台180接收基板。
圖2是表示一實施方式的擺動輸送機12的結構的立體圖。擺動輸送機12是設置於基板處理裝置的框架160的基板搬運機構，擺動輸送機12包括：線性導向件161，該線性導向件161沿鉛垂方向延伸；擺動機構162，該擺動機構162安裝於線性導向件161；以及升降驅動機構165，該升降驅動機構165使擺動機構162在鉛垂方向上移動。作為該升降驅動機構165，能採用具有伺服電動機和滾珠絲杠的電缸(日文：
Figure 106111036-A0305-02-0008-2
；英文：ROBO Cylinder)等。
在搖擺機構162經由搖擺臂166連結有反轉機構167。並且，在反轉機構167連結有對基板進行把持的把持機構170。在擺動輸送機12的側方配置有設置於框架160的臨時載置台180。該臨時載置台180位於圖1的第一線性輸送機6和清洗部4之間。
搖擺臂166通過擺動機構162的未圖示的電動機的驅動而以 該電動機的轉軸為中心進行迴旋。由此，反轉機構167以及把持機構170一體地進行迴旋運動，把持機構170在第四搬運位置TP4、第五搬運位置TP5、以及臨時載置台180之間移動。
圖3以及圖4A、圖4B分別是把持機構170的俯視圖和主視圖。另外，圖5是圖4的沿A-A’的剖視圖。把持機構170具有：框體300；一對可動臂301a、301b，這一對可動臂301a、301b從框體300的側面朝兩側延伸；開閉驅動機構302(圖5)，該開閉驅動機構302使可動臂301a、301b移動；以及支承臂303a、303b，該支承臂303a、303b安裝於可動臂301的前端，並分別沿著與可動臂301a、301b正交的方向延伸。可動臂301a、301b以及支承臂303a、303b構成基板把持部。
支承臂303a、303b能獲得打開狀態(圖4B)和關閉狀態(圖4A)，在關閉狀態下把持基板。在支承臂303a、303b設有卡盤304a、304b，該卡盤304a、304b從上述支承臂303a、303b的兩端向下方突出，並用於支承基板的周緣部。
可動臂301a、301b由具有氣動卡盤41的開閉驅動機構302驅動，並向彼此接近(圖4A)以及遠離(圖4B)的方向移動。另外，能利用圖2所示的升降驅動機構165使擺動機構162在鉛垂方向上移動。由此，反轉機構167以及把持機構170一體地進行升降運動，把持機構170在第四搬運位置TP4、第五搬運位置TP5、以及臨時載置台180之間進行升降移動。
圖6是表示開閉驅動機構302的大致結構的示意圖。開閉驅動機構302使用空氣對支承臂303a、303b進行打開或關閉，開閉驅動機構302包括：氣動卡盤41；配管42a、42b；以及壓力控制部43。氣動卡盤41具有： 外殼410；以及能左右滑動的氣缸41a、41b。配管42a、42b分別使氣缸滑動。
氣缸41a、41b設於外殼410內，該外殼410設於框體300內，可動臂301a、301b分別安裝於氣缸41a、41b。即，可動臂301a貫穿框體300以及外殼410，可動臂301a的一端安裝於氣缸41a，另一端安裝有支承臂303a(圖6中未圖示)。而且，可動臂301b貫穿框體300，可動臂301b的一端安裝於氣缸41b，另一端安裝有支承臂303b(圖6中未圖示)。
在圖6中標有點的配管42a的一端與壓力控制部43連接。並且，配管42a在外殼410內分支，一方的前端部421a與氣缸41a的左側面連接，另一方的前端部422a與氣缸41b的右側面連接。
在圖6中標有斜線的配管42b的一端與壓力控制部43連接。並且，配管42b在外殼410內分支，一方的前端部421b與氣缸41b的左側面連接，另一方的前端部422b與氣缸41a的右側面連接。
壓力控制部43向配管42a、42b供給空氣並加壓或對配管42a、42b進行排氣。雖然壓力控制部43可以位於框體300內，但也可以位於框體300外，在這種情況下，配管42a、42b的一部分位於框體300外。
圖7是對使可動臂301分離的情況下的開閉驅動機構302的動作進行說明的圖。壓力控制部43對配管42a進行排氣，並對配管42b進行加壓。配管42a的排氣可以是暫時的直至配管42a內的空氣排光為止，另一方面，繼續進行配管42b的加壓(空氣供給)。由此，配管42b的前端部421b使氣缸41b向右側移動，前端部422b使氣缸41a向左側移動。由此，氣缸41a、41b分離，從而使安裝於氣缸41a、41b的可動臂301a、301b分離。其結果是，支承臂303a、303b打開。也就是說，配管42a、42b能夠供給用於驅動支承臂 303a、303b的空氣。
圖8是對使可動臂301接近的情況下的開閉驅動機構302的動作進行說明的圖。壓力控制部43對配管42b進行排氣，並對配管42a進行加壓。配管42b的排氣可以是暫時的直至在配管42b內的空氣排光為止，另一方面，繼續進行對配管42a的加壓(空氣供給)。由此，配管42a的前端部421a使氣缸41a向右側移動，前端部422a使氣缸41b向左側移動。由此，氣缸41a、41b接近，從而使安裝於氣缸41a、41b的可動臂301a、301b接近。其結果是，支承臂303a、303b關閉。
對通過以上說明了的擺動輸送機12而進行的基板搬運進行說明。
如圖4B所示，在未把持基板的待機時間，可動臂301a、301b彼此分離。
圖9A~9C是對把持基板時的把持機構170的動作進行說明的圖。示出了由第一線性輸送機6(未圖示)搬運來的基板W在第四搬運位置TP4轉移至把持機構170情況。
如圖9A所示，擺動輸送機12的把持機構170移動至載置於第一線性輸送機6的基板W的上方。此時，可動臂301a、301b彼此分離，支承臂303a、303b打開。
接下去，如圖9B所示，把持機構170由升降驅動機構165(圖2)驅動而以卡盤304a、304b位於基板W的側方的方式下降。
接著，如圖9C所示，利用開閉驅動機構302使可動臂301a、301b彼此接近，從而使支承臂303a、303b關閉。由此，基板W的周緣把持於卡盤304a、304b。之後，把持機構170由升降驅動機構165驅動而上升。
為了使基板W從第一線性輸送機6移動到第二線性輸送機7，如下所示，這種擺動輸送機12將載置於第四搬運位置TP4的基板W搬運到第五搬運位置TP5。
首先，擺動輸送機12在支承臂303a、303b打開的狀態下移動到第四搬運位置TP4(圖9A)。接著，把持機構170下降(圖9B)，支承臂303a、303b對載置於第四搬運位置TP4的基板W進行把持(圖9C)。之後，把持機構170在支承著基板W的同時上升，把持機構170由搖擺機構162驅動而搖動，並移動到第五搬運位置TP5的上方。接著，把持機構170下降，支承臂303a、303b打開並將基板W載置於第五搬運位置TP5。
另外，為了使基板W從第四搬運位置TP4(或者第五搬運位置TP5)移動到清洗部4並使該基板W反轉，如下所示，擺動輸送機12將載置於第五搬運位置TP5的基板W搬運到臨時載置台180。
首先，擺動輸送機12在支承臂303a、303b打開的狀態下移動到第五搬運位置TP5的上方(圖9A)。接著，把持機構170下降(圖9B)，支承臂303a、303b對載置於第五搬運位置TP5的基板W進行把持(圖9C)。之後，把持機構170在支承著基板W的同時上升，反轉機構167將基板W反轉，接著，把持機構170由搖擺機構162驅動而搖動，並移動到臨時載置台180的上方。然後，把持機構170下降，支承臂303a、303b打開而將基板W載置到臨時載置台180。
此處，圖1所示的基板處理裝置內的濕度較高，因此，濕度較高的空氣也可能流入到框體300。另外，為了對基板進行保濕，基板處理裝置在未處理基板的待機時間也從各處供給有沖洗水。根據情況，可能會 出現擺動輸送機12淋水而導致框體300被冷卻的狀況。假如擺動輸送機12的框體300的內部(例如其天井面)產生結露，會給框體300內的氣缸41a、41b的動作帶來壞影響，很有可能會對基板搬運造成障礙。
因此，本實施方式中設有抑制結露的結構。
如圖6所示，把持機構170的開閉驅動機構302使設於框體300內的配管42b在外殼410的外側分支，並將空氣從前端部423b供給到框體300內並使該空氣迴圈。優選的是，開閉驅動機構302具有節流孔44，以不對氣缸41a、41b等其他部件帶來影響的方式一點點地向框體300內供給空氣。另外，優選的是，開閉驅動機構302具有篩檢程式45，通過該篩檢程式45向框體300內供給乾淨的空氣。通過這樣向框體300的內部供給空氣，產生空氣迴圈而使溫度變化變小，從而能抑制結露的發生。
而且，既可以僅使配管42b分支並供給空氣，也可以僅使配管42a分支並供給空氣，還可以從配管42a、42b雙方向框體300供給空氣。不過，更優選的是，使在可動臂301分離時(也就是未保持基板W時)被加壓的配管42b分支。由此，其原因是，能在未保持基板W的時候向框體300內供給空氣。
這樣，本實施方式中，向框體300內供給空氣，因而能夠抑制框體300內結露的發生。另外，使用用於驅動可動臂301a、301b的空氣，因而能夠使追加的部件停留在最小限度。
上述實施方式是以具有本發明所屬的技術領域中的通常知識的一般技術人員能實施本發明為目的而加以記載的。上述實施方式的種種變形例，只要是本領域的技術人員，自然能夠做出，本發明的技術思想 也能夠適用於其他實施方式。因此，本發明並不限定於所記載的實施方式，而應是按照由專利權利要求書所定義的技術思想所得出的最大範圍。
300:框體
301a、301b:可動臂
302:開閉驅動機構
41:氣動卡盤
410:外殼
41a、41b:氣缸
42a、42b:空氣配管
421a、421b:前端部
422a、422b:前端部
423b:前端部
43:壓力控制部
44:節流孔
45:篩檢程式

Claims (7)

  1. 一種基板搬運裝置，其具備：基板把持部，該基板把持部對基板進行把持；框體；以及驅動機構，該驅動機構的、至少一部分設於所述框體內，並使用空氣對所述基板把持部進行驅動，其中所述驅動機構具有配管，該配管的至少一部分設於所述框體內，所述配管供給用於驅動所述基板把持部的空氣，並向所述框體內供給空氣，所述配管包括：第一配管，該第一配管在所述基板把持部把持基板時被加壓；及第二配管，該第二配管在所述基板把持部未把持基板時被加壓；從所述第二配管向所述框體內供給空氣。
  2. 一種基板搬運裝置，其具備：基板把持部，該基板把持部對基板進行把持；框體；以及驅動機構，該驅動機構的、至少一部分設於所述框體內，並使用空氣對所述基板把持部進行驅動，其中所述驅動機構能向所述框體內供給空氣，所述基板把持部包括能打開關閉的一對支承臂，所述驅動機構具有：氣缸，該氣缸設於所述框體內，並利用空氣使所述一對支承臂打開關閉；及 配管，該配管向所述氣缸供給空氣；所述配管包括：第一配管，該第一配管在所述基板把持部把持基板時被加壓；及第二配管，該第二配管在所述基板把持部未把持基板時被加壓；從所述第二配管向所述框體內供給空氣。
  3. 如請求項1或請求項2所述之基板搬運裝置，其中包括設於所述配管的節流孔。
  4. 如請求項1或請求項2所述之基板搬運裝置，其中包括設於所述配管的篩檢程式，且經由所述篩檢程式向所述框體內供給空氣。
  5. 如請求項3所述之基板搬運裝置，其中包括設於所述配管的篩檢程式，且經由所述篩檢程式向所述框體內供給空氣。
  6. 一種基板處理裝置，其具備：研磨單元、清洗單元及乾燥單元；以及在各單元之間搬運基板的請求項1~5中任一項所述之基板搬運裝置。
  7. 一種結露抑制方法，抑制在請求項1~5中任一項所述之基板搬運裝置產生結露，其係將用於驅動所述基板把持部的空氣，也供給至所述基板搬運裝置的框體。
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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7137047B2 (ja) * 2018-03-15 2022-09-14 シンフォニアテクノロジー株式会社 Ｅｆｅｍ、及び、ｅｆｅｍにおけるガス置換方法
TWI759595B (zh) * 2018-05-11 2022-04-01 日商東京威力科創股份有限公司 基板處理系統及基板處理方法
JP7097760B2 (ja) * 2018-06-25 2022-07-08 東京エレクトロン株式会社 搬送装置および搬送方法
JP6877480B2 (ja) * 2019-04-09 2021-05-26 株式会社荏原製作所 搬送装置、ワーク処理装置、搬送装置の制御方法、プログラムを記憶する記録媒体

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10180678A (ja) * 1996-12-27 1998-07-07 Mitsubishi Electric Corp 耐環境型産業用ロボット
WO2007099976A1 (ja) * 2006-02-22 2007-09-07 Ebara Corporation 基板処理装置、基板搬送装置、基板把持装置、および薬液処理装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3578034A (en) * 1969-03-27 1971-05-11 Fort Wayne Tool & Die Inc Apparatus for automatically winding concentric dynamoelectric machine coils
JP3005373B2 (ja) * 1992-10-23 2000-01-31 東京エレクトロン株式会社 処理装置
JP4127346B2 (ja) 1999-08-20 2008-07-30 株式会社荏原製作所 ポリッシング装置及び方法
JP2002110609A (ja) * 2000-10-02 2002-04-12 Tokyo Electron Ltd 洗浄処理装置
JP3888608B2 (ja) * 2001-04-25 2007-03-07 東京エレクトロン株式会社 基板両面処理装置
JP4197103B2 (ja) 2002-04-15 2008-12-17 株式会社荏原製作所 ポリッシング装置
KR101958874B1 (ko) 2008-06-04 2019-03-15 가부시키가이샤 에바라 세이사꾸쇼 기판처리장치, 기판처리방법, 기판 파지기구, 및 기판 파지방법
JP2013086241A (ja) * 2011-10-21 2013-05-13 Ihi Corp チャック装置およびチャック方法
JP2015114966A (ja) * 2013-12-13 2015-06-22 アドバンス電気工業株式会社 流量制御弁及びこれを用いた流量制御装置
JP2017175072A (ja) * 2016-03-25 2017-09-28 川崎重工業株式会社 基板搬送ハンド及びロボット

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10180678A (ja) * 1996-12-27 1998-07-07 Mitsubishi Electric Corp 耐環境型産業用ロボット
WO2007099976A1 (ja) * 2006-02-22 2007-09-07 Ebara Corporation 基板処理装置、基板搬送装置、基板把持装置、および薬液処理装置

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