JP6577385B2 - 基板保持モジュール、基板処理装置、および基板処理方法 - Google Patents
基板保持モジュール、基板処理装置、および基板処理方法 Download PDFInfo
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- JP6577385B2 JP6577385B2 JP2016024620A JP2016024620A JP6577385B2 JP 6577385 B2 JP6577385 B2 JP 6577385B2 JP 2016024620 A JP2016024620 A JP 2016024620A JP 2016024620 A JP2016024620 A JP 2016024620A JP 6577385 B2 JP6577385 B2 JP 6577385B2
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- 238000012545 processing Methods 0.000 title claims description 15
- 238000003672 processing method Methods 0.000 title claims description 12
- 239000007788 liquid Substances 0.000 claims description 23
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 22
- 238000001514 detection method Methods 0.000 claims description 6
- 238000007599 discharging Methods 0.000 claims description 2
- 238000005498 polishing Methods 0.000 description 43
- 238000012546 transfer Methods 0.000 description 34
- 238000004140 cleaning Methods 0.000 description 33
- 238000001035 drying Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000012530 fluid Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- JUPQTSLXMOCDHR-UHFFFAOYSA-N benzene-1,4-diol;bis(4-fluorophenyl)methanone Chemical compound OC1=CC=C(O)C=C1.C1=CC(F)=CC=C1C(=O)C1=CC=C(F)C=C1 JUPQTSLXMOCDHR-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
- B24B37/32—Retaining rings
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
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- B08B11/02—Devices for holding articles during cleaning
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
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- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
- B24B37/345—Feeding, loading or unloading work specially adapted to lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
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Description
第1の実施形態によれば、搬送ロボットにより搬送される基板を受け入れ可能な基板保持モジュールが提供される。かかる基板保持モジュールは、基板を保持するための保持機構を有する台座と、前記台座を覆うためのカバーと、前記カバーを前記台座から離れるように移動させる移動機構と、を有する。
図1は、基板処理装置の一例としての裏面研磨装置1000の平面図である。裏面研磨装置1000は、半導体基板WFの裏面を研磨する装置である。なお、本明細書において、基板の裏面とは、デバイスおよび配線(回路)が形成される表面の反対側の面をいう。裏面研磨装置1000は、ロード/アンロードユニット200と、エッジ研磨ユニット300と、裏面研磨ユニット350と、裏面洗浄ユニット400と、表面洗浄ユニット450と、を備える。また、裏面研磨装置1000は、これらユニットの各種動作の動力源となる電源を供給する電源盤600と、これらユニットの各種動作を制御するための制御ユニット(不図示)を備える。以下、裏面研磨装置1000内での基板の流れに沿って、ロード/アンロードユニット200、エッジ研磨ユニット300、裏面研磨ユニット350、裏面洗浄ユニット400、および表面洗浄ユニット450について説明する。
ロード/アンロードユニット200は、FOUPとプロセスユニット間で基板WFの搬送を行うユニットである。ロード/アンロードユニット200は、複数(本実施形態では4台)のフロントロード部220を備える。フロントロード部220にはそれぞれ、基板WFをストックするためのカセットが搭載される。
仮置台702に置かれた基板WFは、搬送ロボット104により移載機302を介してエッジ研磨ユニット300へ渡される。エッジ研磨ユニット300は、基板WFの周縁部(
外周エッジ領域を含む)を研磨する装置である。エッジ研磨ユニット300は、研磨テープを用いて基板WFの周縁部を研磨する。なお、図1の裏面研磨装置1000は、2台のエッジ研磨ユニット300を備えているが、他の実施形態として任意の数のエッジ研磨ユニット300を備えることができる。
仮置台500に置かれた基板WFは、搬送ロボット106により基板WFを反転させた後に裏面研磨ユニット350へ渡される。裏面研磨ユニット350は、基板WFの裏面を研磨するユニットである。裏面研磨ユニット350は、ステージに保持された基板WFを、研磨テープを保持する裏面研磨ヘッド352を用いて基板WFの裏面を研磨する。なお、図1の裏面研磨装置1000は、2台の裏面研磨ユニット350を備えているが、他の実施形態として任意の数の裏面研磨ユニット350を備えることができる。
裏面研磨が終了すると、搬送ロボット106は再び裏面研磨ユニット350から基板WFを受け取る。搬送ロボット106は受け取った基板WFを図示しない仮置台に配置し、搬送ロボット108が基板WFを受け取り、2台の裏面洗浄ユニット400のいずれかに基板WFを受け渡す。裏面洗浄ユニット400は、基板の裏面を洗浄するユニットである。一実施形態として、裏面洗浄ユニット400は、回転するペンシルスポンジ402を基板の裏面に押し付けて基板WFの半径方向に揺動させることによって基板WFを洗浄するペン洗浄ユニットとすることができる。さらに、裏面洗浄ユニット400には、基板の裏面に向けて液体(たとえば純水)と気体の混合流体からなる二流体噴流を噴射して、基板WFを洗浄する、二流体ジェットノズルが設けられる。なお、図1の裏面研磨装置1000は、2台の裏面洗浄ユニット400を備えているが、他の実施形態として任意の数の裏面洗浄ユニット400を備えることができる。
基板WFの裏面洗浄が終了すると、搬送ロボット108は再び裏面洗浄ユニット400から基板WFを受け取り、図示しない仮置台に基板WFを配置する。その後、搬送ロボット106が仮置台から基板WFを受け取り、基板WFの面を反転させた後に、この基板WFを仮置台704に配置する。仮置台704は、仮置台500の下側に配置されている。なお、仮置台500と、仮置台704とは、互いに独立して設置されている。仮置台704に配置された基板WFは、搬送ロボット110により受け取られ、さらに搬送ロボット112に基板WFが受け渡され、その後、第1表面洗浄ユニット450aに基板WFが受け渡される。第1表面洗浄ユニット450aは、洗浄液を基板WFの表面に供給しながら、回転するロールスポンジ452を基板WFの表面に押し付けることにより基板WFの表面を洗浄するロール洗浄ユニットとすることができる。第1表面洗浄ユニット450aで洗浄された基板WFは、搬送ロボット112により第2表面洗浄ユニット450bへ受け渡される。第2表面洗浄ユニット450bは、第1表面洗浄ユニット450aと同様にロール洗浄ユニットとすることができる。第2表面洗浄ユニット450bで洗浄された基板WFは、搬送ロボット110により第3表面洗浄ユニット450cへ受け渡される。第3表面洗浄ユニット450cは、裏面洗浄ユニット400と類似のペン洗浄ユニットとすることができる。
せる。乾燥ユニット800により乾燥された基板WFは、搬送ロボット102により受け取られて、フロントロード部220へ戻される。
以下、仮置台500(基板保持モジュール)の詳細な構造を説明する。以下で説明する仮置台500は、図1に示される裏面研磨装置1000において、エッジ研磨ユニット300で周縁部の研磨が終了した基板WFを搬送ロボット104で受け取った後に基板WFが配置される仮置き台500である。
また、上側カバー514を仮置台500内の底面付近へと移動させる際には、たとえば、基板WFを仮置台500の上に載置させてピン512にて保持した後、後述のように基
板WFがあることを検知した上で、底部材502および台座508に対して移動を開始し、第1の位置(たとえば、台座508より下の位置で、底面504から約1cm〜3cm程度上にある位置)まで移動させて一旦停止させて(実質的に停止させることも含む)、その後に、底面付近の位置である第2の位置まで上側カバー514を移動させるようにすることができる。このようにすることで、上側カバー514が底面504付近に移動する際に、底面504に溜まっている液体を飛び散らせないようにすることができる。あるいは、第1の位置において上側カバー514を停止させることなく、第1の位置までは比較的に大きい速度である第1の速度で上側カバー514を移動させた後、第1の速度よりも小さい速度である第2の速度で第2の位置まで上側カバー514を移動させるようにして、底面504にある液体を飛び散らせないようにすることもできる。
を供給するノズル520を省略した仮置台とすることもできる。
106 搬送ロボット
500 仮置台(基板保持モジュール)
502 底部材
504 底面
506 側壁
508 台座
510 ロータリ機構
512 ピン
514 上側カバー
516 移動機構
518 検知機構
520 ノズル
1000 裏面研磨装置
Claims (11)
- 搬送ロボットにより搬送される基板を受け入れ可能な基板保持モジュールであって、
基板を保持するための保持機構を有する台座と、
前記台座を覆うためのカバーと、
前記カバーを前記台座から離れるようにおよび前記台座に近づけるように移動させる移動機構と、
前記保持機構に基板が保持された状態で基板の一方の面または両面に液体を供給するためのノズルと、
底面、および前記底面の外周を囲う側壁を備える底部材と、を有し、
前記カバーは、前記台座を覆った状態で前記底部材の前記側壁の内側で前記底部材の前記底面に接触可能であり、
前記移動機構は、前記カバーで前記台座を覆うときに、
(1)前記カバーを第1の位置まで移動させて一旦停止させて、その後に、前記底面付近である第2の位置まで前記カバーを移動させる、または、
(2)前記カバーを第1の速度で第1の位置まで移動させ、その後に、前記第1の速度よりも小さい速度である第2の速度で前記底面付近である第2の位置まで前記カバーを移動させる、
ように構成されている、
基板保持モジュール。 - 請求項1に記載の基板保持モジュールであって、
前記台座を回転させるためのロータリ機構を有する、
基板保持モジュール。 - 請求項1または2に記載の基板保持モジュールであって、
前記保持機構は基板保持ピンを有する、
基板保持モジュール。 - 請求項1に記載の基板保持モジュールであって、
前記基板保持モジュールは、液体を排出するための排液機構を有する、
基板保持モジュール。 - 請求項1に記載の基板保持モジュールであって、
さらに、基板の有無を検知するための検知機構を有し、
前記移動機構は、前記保持機構により基板が保持されていることを前記検知機構が検知した後に、前記カバーを前記第1の位置へ移動させる、ように構成されている、
基板保持モジュール。 - 請求項1に記載の基板保持モジュールであって、
前記第1の位置は、前記台座より下の位置であり、かつ、前記底面から上方に1cm〜3cm離れた位置である、
基板保持モジュール。 - 基板処理装置であって、
請求項1乃至6のいずれか一項に記載の基板保持モジュールと、
前記基板保持モジュールに基板を搬送するための複数のロボットと、を有する、
基板処理装置。 - 基板処理方法であって、
底面、および前記底面の外周を囲う側壁を備える底部材を有する基板保持モジュールのカバーを開く工程と、
前記カバー内に配置される基板保持ピン上に基板を置き、前記カバーを前記底部材の前記底面付近までまたは前記底面に接触する位置まで移動させることで、前記カバーを閉じる工程と、
前記カバーを開き、前記基板保持ピン上に配置された基板を次工程へと搬送する工程と、
を有し、
前記カバーを閉じる工程は、
(1)前記カバーを第1の位置まで移動させて一旦停止させて、その後に、前記底面付近である第2の位置まで前記カバーを移動させる工程、または、
(2)前記カバーを第1の速度で第1の位置まで移動させ、その後に、前記第1の速度よりも小さい速度である第2の速度で前記底面付近である第2の位置まで前記カバーを移動させる工程、を有する、
基板処理方法。 - 請求項8に記載の基板処理方法であって、
前記基板保持モジュール内に基板があるかどうかを検知する工程と、
前記基板保持モジュールのカバーが閉じられた後に、前記基板の表面および/または裏面に液体を供給する工程と、を有する、基板処理方法。 - 請求項8に記載の基板処理方法であって、
前記基板保持ピン上に基板が保持されていることを検知した後に、前記カバーを閉じる工程を実行する、
基板処理方法。 - 請求項8に記載の基板処理方法であって、
前記基板保持モジュールは、前記基板保持ピンが取り付けられている台座を有し、
前記第1の位置は、前記台座より下の位置であり、かつ、前記底面から上方に1cm〜3cm離れた位置である、
基板処理方法。
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