TWI703625B - 晶圓的加工方法 - Google Patents

晶圓的加工方法 Download PDF

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TWI703625B
TWI703625B TW105134772A TW105134772A TWI703625B TW I703625 B TWI703625 B TW I703625B TW 105134772 A TW105134772 A TW 105134772A TW 105134772 A TW105134772 A TW 105134772A TW I703625 B TWI703625 B TW I703625B
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wafer
cutting
support substrate
adhesive tape
grinding
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森數洋司
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日商迪思科股份有限公司
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Abstract

本發明的課題在於提供一種用於使器件更薄化、小型化之晶圓的加工方法。
本發明之晶圓的加工方法包含：使支承基板面對晶圓的正面並以黏合材為媒介黏貼成一體之一體化步驟、對晶圓的背面進行磨削以將其減薄之背面磨削步驟、從晶圓的背面沿分割預定線切斷成各個器件之切斷步驟、在晶圓的背面配設保護部件之保護部件配設步驟、將對支承基板具有透射性的波長之雷射光的聚光點定位於黏合材並進行照射以破壞黏合材之黏合材破壞步驟，和，將支承基板從器件剝離以分離成各個器件之支承基板剝離步驟。

Description

晶圓的加工方法 發明領域
本發明涉及一種將正面上形成有器件之薄板狀的晶圓分離成一個個的器件之晶圓的加工方法。
發明背景
IC、LSI、功率器件等之複數個器件以分割預定線劃分並形成於正面的晶圓，是利用雷射加工裝置等之分割裝置將分割預定線切斷以分割成一個個的器件晶片；器件晶片被應用於行動電話、個人電腦、電視機等之電子產品。而且，應該要使應用這種器件晶片的行動電話，或具有通信功能的腕錶等更為小型、輕量化，將該器件晶片的厚度做得更薄的技術因而受到期待。
將透過分割晶圓而獲得之器件減薄的技術已經有稱做預先劃片的技術被提出(例如，參見專利文獻1)。
該技術是一種，沿著分割預定線，預先形成深度相當於器件晶片之完工厚度的溝槽，之後，將保護部件配設於晶圓的正面再磨削晶圓的背面使該溝槽露出而將晶圓分割成一個個的器件晶片的技術。
先前技術文獻 〔專利文獻〕
〔專利文獻1〕特開平11-040520号公報
發明概要
上述專利文獻1中記載的技術是一種，沿著形成有器件之正面側的分割預定線，預先形成比完成時之器件晶片的厚度更深的溝槽，並在該晶圓的正面側黏貼作為保護部件的片材，且以該晶圓的正面側為下面地保持於吸盤工作台，對該晶圓的背面進行磨削、研磨直至達到器件晶片完成時的厚度，藉而將晶圓分割成一個個的器件晶片的技術。
但是，上述技術中，如果要進行磨削加工以便，例如，使一個個的器件晶片小到，或薄到形成1mm以下的正方形，或者厚度在10μm以下，就會有因為磨削加工時被傳達給晶圓之磨削輪的振動和壓制負載的變動，導致器件晶片從作盤保護部件的片材飛散，或器件晶片破損的問題，有所謂，應用上述預先劃片技術以使各器件晶片小型化，或薄型化時存在極限的問題。因此，在用於使器件晶片更薄化、小型化之晶圓的加工方法中留有應該要解決的課題。
為解決上述之主要技術課題，依據本發明，提供的是一種將由複數條分割預定線劃分成的正面區域上分別備有器件的晶圓，沿分割預定線分割成一個個的器件之晶圓的 加工方法，其包含：一體化步驟，使支承基板面對晶圓的正面並透過黏合材黏貼成一體、背面磨削步驟，實施該一體化步驟後，對該晶圓的背面進行磨削以將其減薄、切斷步驟，從磨削過之該晶圓的背面沿分割預定線切斷成各個器件、保護部件配設步驟，在沿分割預定線被切斷之該晶圓的背面配設保護部件、黏合材破壞步驟，實施保護部件配設步驟後，將對該支承基板具有透射性的波長之雷射光的聚光點定位於該黏合材並進行照射以破壞該黏合材、及支承基板剝離步驟，實施該黏合材破壞步驟後，將該支承基板從該器件剝離以分離成各個器件。
較佳的是，在該保護部件配設步驟中，將晶圓收納於具有收納晶圓之開口部的框架之該開口部，同時用黏著膠帶將晶圓的背面與框架的外周黏貼起來，透過黏著膠帶將晶圓支承於框架上，藉以將保護部件配設於晶圓的背面。較佳的是，本發明之晶圓的加工方法在該基板剝離步驟後，進一步包含擴展黏著膠帶以擴展器件的間隔並從黏著膠帶拾取器件的拾取步驟。
較佳的是，該切斷步驟包含利用切割刀的切斷、利用雷射光的切斷、利用電漿蝕刻的切斷、利用濕式蝕刻的切斷之任一者。
若依據本發明之晶圓的加工方法，和習知之利用預先劃片之晶圓的加工方法相比，既不會發生磨削中的飛散和器件的破壞等，還能夠磨削得更薄，結果，能夠使所分割 成的一個個器件晶片形成得更小、更薄。
2:半導體晶圓
2a:正面
2b:背面
21:分割預定線
21a:切割槽
22:器件
3:支承基板
4:磨削裝置
41:吸盤工作台
41a:箭頭
42:磨削石
42a:箭頭
43:磨削構件
5:切割裝置
51:吸盤工作台
52:切割構件
521:轉軸套
522:轉軸
522a:箭頭
523:切割刀
523a:刀刃
53:攝像構件
6:雷射光照射構件
61:聚光器
7:剝離機構
71:吸附構件
711:吸引通路
712a~712c:吸引襯墊
72:支承構件
8:分離裝置
81:框架保持部件
82:夾具
823a:氣缸
823b:活塞桿
83:擴展鼓輪
84:拾取筒夾
B:黏合材
F:框架
T:黏著膠帶
W:晶圓
X:方向
〔圖1〕(a)-(b)一體化步驟的示意斜視圖。
〔圖2〕背面磨削步驟的示意斜視圖。
〔圖3〕(a)-(c)切斷步驟的示意斜視圖。
〔圖4〕保護部件配設步驟的示意斜視圖。
〔圖5〕(a)-(b)黏合材破壞步驟的示意斜視圖。
〔圖6〕支承基板剝離步驟的示意斜視圖。
〔圖7〕拾取步驟的示意斜視圖。
用於實施發明的形態
(一體化步驟)
關於依據本發明而實施之晶圓的加工方法，將參照所附圖式詳細地做說明。首先，如圖1所示，在半導體晶圓2之形成有器件22的正面2a側，用選自環氧樹脂、聚醯亞胺樹脂等之周知的黏合材的黏著劑黏貼支承基板3，形成接合晶圓W(一體化步驟)。此外，半導體晶圓2是由，例如厚度200μm的矽晶圓形成，並且在半導體晶圓2之正面2a呈格子狀地形成有複數條分割預定線21。然後，在半導體晶圓2之正面2a由形成格子狀的複數條分割預定線21劃分成的複數個區域上形成IC、LSI等之器件22。另外，該支承基板3是選自，例如玻璃、藍寶石等的基板，且宜選自透明性部件。
(背面磨削步驟)
如上所述，以黏合材將半導體晶圓2與支承基板3一體化之後，如圖2所示地，實施磨削半導體晶圓2之背面2b的背面磨削步驟。此背面磨削步驟是採用示於圖2之磨削裝置4而實施。示於圖2之磨削裝置4具備磨削構件43，其具有：保持被加工物的吸盤工作台41，和用於對被保持於該吸盤工作台41的被加工物進行磨削之磨削石42。在使用該磨削裝置4實施背面磨削步驟時，是將接合晶圓W的支承基板3側載置於吸盤工作台41上，並使未圖示出之吸引構件作動，藉以將該接合晶圓W吸引固定於吸盤工作台41上。因此，被保持在吸盤工作台41上之接合晶圓W是以半導體晶圓2的背面2b側為上側而被固定住。如此地處理，將接合晶圓W固定於吸盤工作台41上之後，就讓吸盤工作台41在箭頭41a表示的方向上，一邊以例如300rpm旋轉，同時使磨削構件43的磨削石42在箭頭42a表示的方向上，以例如6000rpm旋轉，並接觸到半導體晶圓2的背面2b以進行磨削，實施留下指定的殘存厚度(例如，5~10μm)的磨削。
(切斷步驟)
實施過磨削半導體晶圓2的背面2b之背面磨削步驟後，接著實施切斷步驟，從半導體晶圓2的背面2b沿分割預定線21切斷成各個器件。
如圖3(a)所示之切割裝置5具備：保持被加工物的吸盤工作台51、對被保持於該吸盤工作台51的被加工物進行切割之切割切割構件52，和對被保持於該吸 盤工作台51的被加工物進行攝像之攝像構件53。吸盤工作台51被裝配成保持被加工物的狀態，並利用未圖示出之切割進給構件而在圖3(a)中以箭頭X表示之切割進給方向上移動。
上述切割構件52包含實質上水平地配置之轉軸套521、旋轉自如地為該轉軸套521所支承之轉軸522，和裝設於該轉軸522的前端部之具有環狀刀刃523a的切割刀523；轉軸522受配設於轉軸套521內之未圖示出的伺服馬達所驅動而在箭頭522a所表示的方向上旋轉。上述攝像構件53由顯微鏡、紅外線照射構件，以及紅外線CCD相機等之光學構件組成，並將所拍攝到的影像信號傳送到未圖示出的控制構件，執行用於實施形成於半導體晶圓2的止面2a側之分割預定線21，與切割刀523的校準之圖形匹配等的影像處理，完成切割區域的對準。此外，在晶圓的背面形成起自正面的貫通電極的情形下，以該電極為基準完成對準亦可。
如上地處理而完成對準後，使保持著接合晶圓W的吸盤工作台51移動到切割加工區域的切割開始位置，將切割刀523往下方橫切，同時使切割刀523以指定的旋轉速度旋轉，並使吸盤工作台51在箭頭X表示的方向上以指定的切割進刀速度移動，且移動直至達到在X軸方向的切割結束位置為止，藉以從半導體晶圓2的背面2b側形成切割槽21a(切割槽形成步驟)，並使吸盤工作台51停止移動。然後，使切割刀523上昇，同時在以箭頭Y表 示的方向(分度進給方向)分度傳送吸盤工作台51，接著將應該要切割的分割預定線21定位到與切割刀523對應的位置，實施上述之切割槽形成步驟(參照圖3(a))。並且，對應形成於該半導體晶圓2之所有的分割預定線21，實施上述之切割槽形成步驟(參照圖3(b))。此外，在本實施形態中，其切割深度雖然設定成將半導體晶圓2切斷，但是根據需要，也可以設定成同時將黏合材層B切斷。以上，切斷步驟結束。
(保護部件配設步驟)
實施過針對上述之半導體晶圓2的切斷步驟後，就要實施在該半導體晶圓2的背面2b側黏貼作為保護部件之黏著膠帶T的保護部件配設步驟。亦即，如圖4所示，在外周部被安裝成覆蓋環狀的框架F的內側開口部之作為保護部件的黏著膠帶T的正面，使上述之半導體晶圓2側，即半導體晶圓2的背面2b在下進行黏貼，保護部件配設步驟結束。藉此，黏貼於黏著膠帶T的接合晶圓W變成支承基板3在上側。
(黏合材破壞步驟)
上述保護部件配設步驟結束後，使用如圖5(a)所示之配備雷射光照射構件6的雷射加工裝置實施黏合材破壞步驟。此外，該雷射加工裝置亦可採用周知的雷射加工裝置，由於並未構成本發明的主要部分，因此關於整體構造，及其詳細內容的說明均予省略。
為實施示於圖5的黏合材破壞步驟，是將已 實施過上述保護部件配設步驟的接合晶圓W之黏著膠帶T側，載置於該雷射加工裝置所具備的吸盤工作台(省略圖示)上。然後使未圖示出之吸引構件作動，藉而隔著黏著膠帶T，將接合晶圓W吸引保持於吸盤工作台上(晶圓保持步驟)。此外，在圖5(a)中雖省略顯示，惟環狀的框架F是由配設於吸盤工作台之適當的框架保持構件保持著。
假使已如上所述地實施完晶圓保持步驟，就將吸引保持著接合晶圓W的吸盤工作台移動到加工區域，如圖5(a)所示地，定位到雷射光照射構件6的聚光器61之正下方。然後，如圖5(b)所示地，利用來自未圖示出之控制構件的控制信號，使雷射光照射構件6作動，對從接合晶圓W的支承基板3側將該支承基板3與半導體晶圓2結合在一起的黏合材B，照射對支承基板3(例如藍寶石)具有透射性，對黏合材(例如環氧樹脂)具有吸收性的波長之雷射光，實施破壞黏合材B之雷射光的照射。此時，一邊照射雷射光，同時使吸盤工作台在以箭頭X表示之加工進給方向，及，以箭頭Y表示之分度進給方向上移動，將從聚光器61照射出來之脈衝雷射光的光點控制成，照射在該接合晶圓W之半導體晶圓2與支承基板3的結合面整體。結果，在半導體晶圓2與支承基板3之間將兩者結合起來的黏合材，在整個區域都受到破壞，由黏合材B造成之半導體晶圓2與支承基板3的結合功能喪失，黏合材破壞步驟結束。
上述雷射光照射步驟中的加工條件設定成 例如，以下所示。
光源：YAG雷射
波長：355nm
重複頻率：50kHz
輸出：0.2W
點徑：φ 50μm
脈衝寬：10ns
進給速度：2000mm/s
(支承基板剝離步驟)
如果實施過上述黏合材破壞步驟，就要實施將支承基板3從半導體晶圓2剝離以分離成各個器件22的支承基板剝離步驟(參照圖6)。首先，黏合材破壞步驟一結束，就將載置著該接合晶圓W的吸盤工作台移動到配設著剝離機構7的剝離位置，將該吸盤工作台所保持住的接合晶圓W定位在由支承構件72支承著的吸附構件71之正下方的位置，並使吸附構件71下降。然後，使隔著吸引通路711而獲得支承之吸引襯墊712a~712c接觸到支承基板3。吸引襯墊712a~712c一接觸到支承基板3，就讓未圖示出之吸引構件作動，使負壓隔著該支承構件72及吸引通路711產生作用，通過吸引襯墊712a~712c吸附支承基板3。以該吸引襯墊712a~712c吸附該支承基板3之後，就如圖6所示地，使吸附著該支承基板3的吸引襯墊712a~712c往背離接合晶圓W的方向，即上方移動，將支承基板3從半導體晶圓2剝離，基板剝離步驟即告完成。該基板剝離步驟 如果結束了，就將剝離的支承基板3收納到未圖示出之支承基板收納容器，而在被載置於吸盤工作台上之黏著膠帶T，則形成支承基板3上所結合之複數個器件22被一個個分離並保持住的狀態。
(拾取步驟)
上述基板剝離步驟如果結束了，就實施從黏著膠帶T拾取該器件22的拾取步驟。該拾取步驟是以圖7中示出其一部分的拾取裝置8來實施的工序，該拾取裝置8配備，框架保持部件81，和，將環狀的框架F載置於其上面部後再將該環狀的框架F保持住之夾具82，及用於使裝設在由該夾具82保持住之環狀的框架F上之黏著膠帶T，連同被保持在上面之一個個的器件22一起擴展之，至少上方形成開口的圓筒形狀的擴展鼓輪83。框架保持部件81由設置成圍住擴展鼓輪83之複數個氣缸823a，和從氣缸823a延伸出之活塞桿823b構成的支承構件823可昇降地支承著。
擴展鼓輪83設定成比環狀的框架F的內徑小，而且比環狀的框架F之裝設於框架F之黏著膠帶T上所黏貼的半導體晶圓2的外徑大。此處，如圖7所示，分離裝置8可以在擴展鼓輪83的上面部與框架保持部件81約略形成相同高度的位置(以虛線表示)，和，通過支承構件823的作用使框架保持部件81下降，擴展鼓輪83的上端部變成比框架保持部件81的上端部來得高的位置(以實線表示)。
讓上述框架保持部件81下降，使擴展鼓輪83的上端從以虛線表示的位置，相對地變化成以實線表示之比框架保持部件81更高的位置時，安裝在環狀的框架F上之黏著膠帶T會貼到擴展鼓輪83的上端緣而被擴展。結果，由於拉力放射狀地作用於黏貼在黏著膠帶T上之半導體晶圓2，因此已經被分割成一個個的器件22彼此間的間隔擴大。然後，在一個個的器件22彼此間的間隔擴大的狀態下，使拾取筒夾84作動，吸附已經被分割的器件22，從黏著膠帶T剝離並進行拾取，再搬送到未圖示出之收納托盤。經由以上工序，拾取步驟結束，依據本發明之晶圓的加工方法就完成了。此外，在本實施形態中的切斷步驟，雖然除了半導體晶圓2之外也同時將黏合材B切斷，但是未必要如此限定。切斷步驟中如果黏合材B未被完全切斷而殘存時，在該拾取步驟中，當黏貼膠帶T受到擴展時就會完全分離。
本發明由於具有如上所述之構成，因此，沿分割預定線形成切割槽之前，不會因為在晶圓之正面側受支承基板所支承的狀態下磨削其背面的操作，而在磨削步驟時出現一個個的器件飛散，也不會有受到破壞的情形，因而能夠發揮特別的作用效果，可以容易地製造例如，尺寸為1mm以下的正方形，或者厚度在10μm以下之，更小型化，或薄化的器件。
另外，在上述實施形態中，作為實施切斷步驟的具體方法，雖然所說明的是用切割刀沿分割預定線 形成切割槽的方式，但是並不限定於此。作為形成切割槽的方法，也可以從，用雷射光切斷的方式、用電漿蝕刻切斷的方式、用濕式蝕刻切斷的方式等，選擇任一種切斷方式。
此外，上述實施形態中，在該保護部件配設步驟，雖然是將晶圓收納於具有收納晶圓之開口部的框架之開口部，同時用黏著膠帶將晶圓的背面與框架的外周黏貼起來，隔著黏著膠帶將晶圓支承於框架上，藉以將保護部件配設於晶圓的背面，但是並不限於此。例如，也可以採用只是將和晶圓形成相同形狀之作為保護部件的膠帶黏貼於晶圓背面的方式，或者將樹脂等塗覆於晶圓正面的方式，進行保護部件的配設。
再者，上述實施形態中，雖然說明了背面磨削步驟之後立即實施切斷步驟的方式，但是當所欲製造之形成於晶圓上的器件是功率器件時，該背面磨削步驟與切斷步驟之間，將包含在晶圓的背面側形成電極的步驟。
2:半導體晶圓
3:支承基板
6:雷射光照射構件
61:聚光器
B:黏合材
F:框架
T:黏著膠帶
W:晶圓
X:方向

Claims (3)

  1. 一種晶圓的加工方法，是將由複數條分割預定線劃分成的正面區域上分別備有器件的晶圓，沿分割預定線分割成一個個的器件之晶圓的加工方法，其包含：一體化步驟，使支承基板面對晶圓的正面並透過黏合材黏貼成一體；背面磨削步驟，實施該一體化步驟後，對該晶圓的背面進行磨削以將其減薄；切斷步驟，從磨削過之該晶圓的背面沿分割預定線切斷各個器件；保護部件配設步驟，在沿分割預定線被切斷之該晶圓的背面配設保護部件；黏合材破壞步驟，實施保護部件配設步驟後，將對該支承基板具有透射性的波長之雷射光的聚光點定位於該黏合材並進行照射以破壞該黏合材；及支承基板剝離步驟，實施該黏合材破壞步驟後，將該支承基板從該器件剝離以分離各個器件，在該背面磨削步驟中，將該晶圓薄化至10μm以下，在該黏合材破壞步驟中，將該雷射光的該聚光點控制成，照射在該晶圓與該支承基板的結合面整體。
  2. 如請求項1之晶圓的加工方法，其在該保護部件配設步驟中，將該晶圓收納於具有收納該晶圓之開口部的框架之該開口部，並且用黏著膠帶將該晶圓的背面與該框架的外周黏貼起來，透過黏著膠帶將晶圓支承於框 架上，藉以將保護部件配設於晶圓的背面，且該支承基板剝離步驟之後，進一步包含擴展黏著膠帶以擴展器件的間隔並從黏著膠帶拾取器件的拾取步驟。
  3. 如請求項1或2之晶圓的加工方法，其中該切斷步驟包含利用切割刀的切斷、利用雷射光的切斷、利用電漿蝕刻的切斷、利用濕式蝕刻的切斷之任一者。
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