TWI798471B - 晶圓加工方法 - Google Patents

晶圓加工方法 Download PDF

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TWI798471B
TWI798471B TW108126568A TW108126568A TWI798471B TW I798471 B TWI798471 B TW I798471B TW 108126568 A TW108126568 A TW 108126568A TW 108126568 A TW108126568 A TW 108126568A TW I798471 B TWI798471 B TW I798471B
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wafer
dicing
processing method
modified layer
semiconductor substrate
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中村勝
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日商迪思科股份有限公司
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Abstract

[課題]提供一種確保元件晶片的抗彎強度，同時元件晶片的形狀不會歪曲的晶圓加工方法。[解決手段] 一種晶圓加工方法，其包含：切割槽形成步驟，其係沿著分割預定線切割元件層，形成切割槽；改質層形成步驟；其係從晶圓的背面，將對半導體基板具有穿透性的波長的雷射光線的聚光點定位於與分割預定線對應的半導體基板的內部而進行照射，沿著分割預定線連續形成改質層；以及分割步驟，其係研削晶圓的背面而薄化晶圓，同時從形成於分割預定線內部的改質層使裂痕在正面側成長而將晶圓分割成各個元件晶片。

Description

晶圓加工方法
本發明係關於一種將在半導體基板的正面層積有元件層的晶圓分割成各個元件晶片的晶圓加工方法。
IC、LSI等多個元件為交叉的多條分割預定線所劃分而形成於半導體基板上所層積的元件層之晶圓，係以切割裝置、雷射加工裝置等分割成各個元件晶片，所分割的元件晶片被利用於行動電話、個人電腦等電子設備。
切割裝置係以可旋轉地具備切割刀片的切割手段，沿著形成於晶圓正面的分割預定線切割晶圓，將晶圓精度良好地分割成各個元件晶片（參照例如專利文獻1）。
雷射加工裝置係將對半導體基板具有穿透性的波長的雷射光線的聚光點定位於與分割預定線對應的區域的內部而進行照射，沿著分割預定線在晶圓的內部連續形成改質層（參照例如專利文獻2）。
以雷射加工裝置形成改質層後，將晶圓分割成各個元件晶片時，在晶圓的正面配設保護構件，保持於卡盤台上，研削晶圓的背面而薄化晶圓，並且從形成於與分割預定線對應的半導體基板內部的改質層使裂痕在晶圓的正面側成長而將晶圓分割成各個元件晶片（參照例如專利文獻3）。 [習知技術文獻] [專利文獻]
[專利文獻1]日本特開2010-050214號公報 [專利文獻2]日本特許第3408805號公報 [專利文獻3]日本特許第4358762號公報
[發明所欲解決的課題] 以上述切割裝置切割晶圓而分割成各個元件晶片時，具有所分割的元件晶片的抗彎強度降低之問題。此外，以上述雷射加工裝置沿著分割預定線的內部形成改質層，在研削晶圓的背面並且使裂痕生成而分割成各個元件晶片時，相較於以切割進行分割時，元件晶片的抗彎強度雖然提高，但在層積於半導體基板的正面之元件層形成為相對比較厚之20～30μm時，則有從半導體基板延伸的裂痕未到達元件層的正面，而產生局部未被分割的區域之問題。再者，若要使以改質層為起點所形成的裂痕勉強地到達元件層的正面而加強研削，則分割成各個的元件晶片就會成為歪曲（扭曲）的形狀，有品質降低之問題。
因此，本發明的目的為提供一種確保元件晶片的抗彎強度，同時元件晶片的形狀不會歪曲的晶圓加工方法。
[解決課題的技術手段] 根據本發明，提供一種晶圓加工方法，其係將晶圓分割成各個元件晶片，該晶圓係在半導體基板的正面層積有元件層，並且具有多個元件被交叉的多條分割預定線所劃分而形成於該元件層上的正面，該晶圓加工方法具備：切割槽形成步驟，其係將切割刀片定位於晶圓的正面，切割層積於該分割預定線上的該元件層，形成切割槽；改質層形成步驟，其係從晶圓的背面，將對該半導體基板具有穿透性的波長的雷射光線的聚光點定位於與該分割預定線對應的該半導體基板的內部而進行照射，沿著該分割預定線連續形成改質層；保護構件配設步驟，其係在該改質層形成步驟之前或後，在晶圓的正面配設保護構件；以及分割步驟，其係將該晶圓的該保護構件側保持於卡盤台上，研削晶圓的背面而薄化晶圓，同時從形成於分割預定線內部的改質層使裂痕在正面側成長而將晶圓分割成各個元件晶片。
較佳為本發明的晶圓加工方法進一步包含：框架支撐步驟，其係在實施該分割步驟之後，在晶圓的背面黏貼切割膠膜，並且以具有容納晶圓的開口的環狀框架透過切割膠膜而支撐晶圓，從晶圓的正面剝離保護構件；以及拾取步驟，其係在該框架支撐步驟之後，擴張該切割膠膜，擴大元件晶片的間隔，拾取元件晶片。
[發明功效] 藉由本發明的晶圓加工方法，元件晶片的抗彎強度會提高。此外，由於以切割刀片切割元件層而形成切割槽，所以在分割步驟，從改質層成長的裂痕會被引導到形成於晶圓正面的切割槽，將晶圓確實地分割成元件晶片，同時元件晶片的形狀會仿照切割槽被形成，所以不會變成歪曲的形狀，而不會招致品質的降低。
以下，就基於本發明所構成的晶圓加工方法的實施形態，一面參照隨附圖式一面進行說明。
當實施本實施形態的晶圓加工方法時，首先準備成為工件的晶圓。如圖1所示，本實施形態所加工的晶圓10，例如在由矽（Si）構成的半導體基板11的正面層積有元件層12，並且多個元件13由交差的多條分割預定線14所劃分而形成於元件層12上。半導體基板11以及元件層12的厚度分別為100μm、30μm，晶圓10的總厚度為130μm。形成有元件層12之側為正面10a，相反側為背面10b。
若是準備了晶圓10，就實施切割槽形成步驟，沿著分割預定線14切割晶圓10的元件層12而形成切割槽。以下，就切割槽形成步驟進行說明。
（切割槽形成步驟） 為了對晶圓10實施切割槽形成步驟，會將晶圓10搬送到圖1所示的切割裝置20（只表示局部）的保持台21上，使晶圓10的背面10b側朝向保持台21的吸附卡盤21a而載置。未圖示的吸引手段連接於保持台21，藉由使該吸引手段作動，透過具有通氣性的吸附卡盤21a而吸引保持晶圓10。
如圖2所示，切割裝置20具備作為切割手段的主軸單元22。主軸單元22具備：主軸23，其裝設於未圖示的移動基台上，可在分度進給方向（在水平面，與加工進給方向X正交的方向）、切入深度方向（上下方向）移動調整，為主軸單元22所旋轉自如地支撐，以未圖示的旋轉驅動機構旋轉驅動。在主軸23的前端部固定有切割刀片24，在鄰接於切割刀片24的兩側位置配設有切割水供給管25，該切割水供給管25係朝向以切割刀片24加工的加工位置供給切割水。切割刀片24係例如以金屬結合劑（metal bond）等固定金剛石磨粒而形成，直徑為50mm，其厚度設定為30μm。
若是在切割裝置20的保持台21上吸引保持了晶圓10，就使用包含配設於切割裝置20上的未圖示的攝影機等的對準手段，進行形成於晶圓10的正面10a上的分割預定線14以及切割刀片24的對位（對準）。
若是結束了上述對準，就將切割刀片24定位於預定分割預定線14上的成為加工開始位置的端部上方，使未圖示的旋轉驅動機構作動，和主軸23共同使切割刀片24旋轉。切割刀片24藉由該旋轉驅動機構，以例如40,000rpm的轉速使其旋轉，相對於晶圓10下降，從晶圓10的正面10a切入進給到正好將元件層12切割去除的30μm的深度。再者，進行切入進給時的切入深度的值雖然對照形成於晶圓10的正面10a上的元件層12的厚度而設定，但未必限定於要去除所有元件層12，也可以設定為例如20μm程度，留下10μm程度。
在將切割刀片24切入進給到離正面10a有30μm的深度的同時，在圖2以箭頭X所示的方向，以例如30mm／秒的速度加工進給保持台21。藉此，切割分割預定線14的所層積的元件層12，如作為以圖2的點線包圍的晶圓10的局部放大側視圖所示，會形成成為30μm深度的切割槽100。若是沿著預定的分割預定線14形成了切割槽100，就進行分度進給到鄰接於形成有切割槽100的分割預定線14、尚未形成切割槽的鄰接的分割預定線14上，實施同樣的切割加工，形成切割槽100。如此一來，若是與所有延長於第一方向的分割預定線14對應，形成了切割槽100，就將保持台21旋轉90°，對於在與先前形成有切割槽100的分割預定線14正交的第二方向上延長的分割預定線14，也進行同樣的切割加工，對於所有的分割預定線14，都以30μm的深度形成30μm的寬度的切割槽100。藉由以上，切割槽形成步驟完畢。若是切割槽形成步驟完畢了，就實施以下說明的保護構件配設步驟、以及改質層形成步驟。
（保護構件配設步驟） 對於實施過切割槽形成步驟、沿著分割預定線14形成有切割槽100的晶圓10，如圖3所示，配設保護膠膜30以作為保護形成於晶圓10的正面10a側的元件層12的保護構件。保護膠膜30可使用：在和晶圓10相同形狀的由聚氯乙烯（PVC）構成的片狀基材的正面塗布丙烯酸類樹脂的糊劑的保護膠膜。保護構件配設步驟係在實施過切割槽形成步驟的切割裝置20的保持台21上實施。如此一來，若是保護構件配設步驟完畢了，就搬送到實施改質層形成步驟的下一個步驟。
（改質層形成步驟） 從保持台21搬出實施過保護構件配設步驟的晶圓10，搬送到圖4所示的雷射加工裝置40（只表示局部），在配設於雷射加工裝置40的保持台41的吸附卡盤41a上，使保護膠膜30側朝向下方，亦即使晶圓10的背面10b側朝向上方而載置。若是在吸附卡盤41a上載置了晶圓10，就使連接於保持台41的未圖示的吸引手段作動，吸引保持晶圓10。
如圖5所示，在雷射加工裝置40上配設有雷射光線照射單元42（只表示局部）。在雷射光線照射單元42上配設有振盪期望波長的雷射的未圖示的雷射振盪器，從雷射振盪器射出的雷射光線LB經過聚光透鏡42a而被聚光，可朝向保持於保持台41上的晶圓10照射。再者，雖然圖示省略，但在雷射加工裝置40上也配設有對準手段，該對準手段含有穿透半導體基板11而可拍攝正面10a側的紅外線照射手段以及紅外線攝影機等。
若是在雷射加工裝置40的保持台41上保持了晶圓10，就使用上述對準手段，從吸引保持於保持台41上的晶圓10的背面10b側，對與形成於正面10a上的分割預定線14對應的位置、以及以雷射光線照射單元42照射雷射光線LB的照射位置進行對位（對準）。
若是結束了上述對準，就將雷射光線照射單元42定位於預定分割預定線14上的成為加工開始位置的端部上方，將雷射光線LB的聚光點位置定位於與分割預定線14對應的半導體基板11的內部。若是已將雷射光線LB的聚光點位置定位於半導體基板11的內部，就如圖5所示，將保持台41在以箭頭X所示的方向進行加工進給，對與分割預定線14對應的半導體基板11的內部進行照射，如放大表示在圖中以點線包圍的局部之側視圖可理解，會連續形成改質層110。若是形成了改質層110，就藉由使保持台41移動，將雷射光線照射單元42進行分度進給到鄰接於已形成改質層110的分割預定線14、且與尚未形成改質層110的分割預定線14對應的位置，實施同樣的雷射加工，沿著分割預定線14形成改質層110。如此一來，若是在與所有延長於第一方向的分割預定線14對應的半導體基板11的內部連續形成了改質層110，就將保持台41旋轉90°，對於與延長於第二方向的分割預定線14對應的半導體基板11的內部，也進行同樣的雷射加工，該第二方向係與先前形成有改質層110的分割預定線14正交的方向，對於與所有的分割預定線14對應的半導體基板11的內部，都連續形成改質層110。如從圖5可理解，改質層110係沿著先前形成的切割槽100形成，切割槽100與改質層110係沿著分割預定線14形成於上下。再者，改質層110並不限於沿著分割預定線14藉由僅一次的雷射光線LB的照射而形成，也可以在半導體基板11的內部，一面將雷射光線LB的聚光點位置在上下方向稍微錯開，一面照射多次，形成為在深度方向具有預定的寬度。藉由以上，改質層形成步驟完畢，接著，實施後述的分割步驟。
再者，上述改質層形成步驟中的雷射加工條件，例如如下設定： 波長 ：1342nm 重複頻率 ：60kHz 平均輸出 ：1W 加工進給速度 ：600mm／秒
（分割步驟） 若是上述改質層形成步驟完畢了，就停止連接於雷射加工裝置40的保持台41的吸引手段的作動，將沿著所有的分割預定線14在內部形成有改質層110的晶圓10搬出。將從保持台41搬出的晶圓10搬送到圖6（a）所示的研削裝置50。將搬送到研削裝置50的晶圓10以保護膠膜30側朝下而載置於配設於研削裝置50的卡盤台51上。未圖示的吸引手段連接於卡盤台51，藉由使該吸引手段作動，將晶圓10吸引保持於卡盤台51上。
研削裝置50具備將吸引保持於卡盤台51上的晶圓10進行研削而薄化用的研削單元52。研削單元52具備：主軸521，其係以未圖示的旋轉驅動機構使其旋轉；安裝座（mounter）522，其係裝設於主軸521的下端；以及研削輪523，其係安裝於安裝座522的下面；研削磨石524環狀地配設於研削輪523的下面。
若是將晶圓10吸引保持於卡盤台51上，就一面使研削單元52的主軸521在圖6（a）中以箭頭R1所示的方向，以例如3000rpm旋轉，一面使卡盤台51在圖6（a）中以箭頭R2所示的方向，以例如300rpm旋轉。然後，使研削磨石524接觸晶圓10的背面10b，將支撐研削磨石524的研削輪523以例如1μm／秒的研削進給速度朝向下方進行研削進給。此時，可一面以未圖示的接觸式的量規測量晶圓10的厚度，一面進行研削，將晶圓10的背面10b研削50μm，將晶圓10設為預定的厚度，例如80μm（半導體基板50μm＋元件層30μm），而停止研削單元52。藉由實施此研削加工，在圖6（b）中，如將以點線包圍的晶圓10的側面的局部區域放大表示，在將晶圓10薄化的過程中產生的裂痕會從改質層110到達切割槽100，形成分割線112。如此，晶圓10會沿著分割預定線14被確實地分割，元件晶片13’的形狀會依照切割槽100被形成，所以元件晶片13’的形狀不會歪曲，可防止品質降低。藉由以上，分割步驟完畢。
在本實施形態，考慮到要將分割成各個元件晶片13’的晶圓10容納於預定的卡式盒中，或者拾取元件晶片13’而搬送到下一個步驟，所以在實施上述分割步驟後，實施框架支撐步驟、以及拾取步驟。以下，將一面參照圖7、圖8，一面就框架支撐步驟、以及拾取步驟進行說明。
（框架支撐步驟） 經過上述分割步驟，被吸引保持於卡盤台51上的晶圓10，如從圖7（a）可理解，係晶圓10的背面10b露出於上方。在本實施形態，如圖7（a）所示，準備了具有設定為可容納晶圓10的尺寸的開口的環狀框架F，將大於該開口的圓形切割膠膜T的外周黏貼於框架F上，再將保持於卡盤台51上的晶圓10定位於開口的中央，在切割膠膜T的中央黏貼晶圓10的背面10b。然後，停止連接於卡盤台51的未圖示的吸引手段，從卡盤台51使晶圓10和框架F共同脫離，形成為以框架F透過切割膠膜T而支撐晶圓10的狀態。然後，如圖7（b）所示，和框架F以及切割膠膜T共同使晶圓10反轉，剝離黏貼於晶圓10的正面10a上的保護膠膜30，框架支撐步驟完畢。如此一來，依照切割槽100以及分割線112而分割成各個元件晶片13’後，也可以在維持晶圓10的形態下，容納於未圖示的卡式盒中，或者搬送到實施後述拾取步驟等的拾取裝置等。
（拾取步驟） 若是實施過上述框架支撐步驟，就搬送到圖8所示的拾取裝置60。拾取裝置60具備：框架保持構件61，其係構成為可升降；夾具62，其係在框架保持構件61的上面部載置框架F並保持框架F；擴張圓筒63，其係用於擴張裝設於以夾具62保持的框架F上的晶圓10的元件晶片13’彼此的間隔，由至少上方開口的圓筒形狀構成；支撐手段64，其係由設置成包圍擴張圓筒63的多個氣缸64a以及從氣缸64a伸長的活塞桿64b構成；以及拾取筒夾65。未圖示的吸引手段連接於拾取筒夾65。
擴張圓筒63設定成小於框架F的內徑、大於黏貼於框架F上所裝設的切割膠膜T上的晶圓10的外徑。此處，如圖8所示，拾取裝置60可形成為：框架保持構件61與擴張圓筒63的上面部成為大致相同高度的位置（以點線所示）；以及藉由支撐手段64的作用使框架保持構件61下降，擴張圓筒63的上端部相對地高於框架保持構件61的上端部的位置（以實線所示）。
使框架保持構件61下降，使擴張圓筒63的上端從以點線所示的位置相對地變化成以實線所示的高的位置，則裝設於框架F上的切割膠膜T就會被擴張圓筒63的上端緣所擴張。此處，晶圓10藉由實施上述分割步驟，已被分割成各個元件晶片13’，切割膠膜T被擴張而拉力（外力）會放射狀地作用於晶圓10，藉此擴大元件晶片13’彼此的間隔。
如上述，若是擴大了鄰接的元件晶片13’彼此的間隔，就使拾取筒夾65作動，以前端部吸附擴大了間隔的狀態的元件晶片13’，從切割膠膜T上拾取。從切割膠膜T拾取的元件晶片13’被搬送到下一個步驟，或是被容納於未圖示的容納盒中。藉由以上，本實施形態中的拾取步驟完畢，本實施形態的晶圓的加工完畢。再者，表示在上述說明所參照的本實施形態的各圖的尺寸，在說明的方便上經適當調整過，並不是表示實際的尺寸。
根據本發明，並不受上述實施形態限定，可提供各種變形例。例如，在上述實施形態，係在實施改質層形成步驟前實施保護構件配設步驟。然而，在改質層形成步驟，並無那麼大的外力作用於晶圓10的正面10a側，所以也可以在實施改質層形成步驟後實施保護構件配設步驟，而具備在分割步驟中實施的研削步驟。
此外，在上述切割槽形成步驟、改質層形成步驟、以及分割步驟所實施的切割裝置、雷射加工裝置、研削裝置的各加工條件，在工件的材質、厚度等方面，當然可以適當調整。
10‧‧‧晶圓 11‧‧‧半導體基板 12‧‧‧元件層 13‧‧‧元件 14‧‧‧分割預定線 20‧‧‧切割裝置 21‧‧‧保持台 22‧‧‧主軸單元 23‧‧‧主軸 24‧‧‧切割刀片 25‧‧‧切割水供給手段 30‧‧‧保護膠膜（保護構件） 40‧‧‧雷射加工裝置 41‧‧‧保持台 42‧‧‧雷射光線照射單元 50‧‧‧研削裝置 51‧‧‧卡盤台 52‧‧‧研削單元 521‧‧‧主軸 523‧‧‧研削輪 524‧‧‧研削磨石 60‧‧‧拾取裝置 100‧‧‧切割槽 110‧‧‧改質層 112‧‧‧分割線
圖1係表示實施切割槽形成步驟時，將晶圓保持於切割裝置的保持台上的態樣的立體圖。 圖2係表示切割槽形成步驟的實施態樣的立體圖、以及保持於保持台上的晶圓的局部放大側視圖。 圖3係表示保護構件配設步驟的實施態樣的立體圖。 圖4係表示使晶圓保持於實施改質層形成步驟用的雷射加工裝置上的態樣的立體圖。 圖5係表示改質層形成步驟的實施態樣的立體圖、以及保持於保持台上的晶圓的局部放大側視圖。 圖6（a）係表示開始分割步驟時的實施態樣的立體圖，（b）係表示藉由實施分割步驟將晶圓分割成各個元件晶片的狀態的立體圖、以及保持於保持台上的晶圓的局部放大側視圖。 圖7（a）係表示在框架支撐步驟，使晶圓透過保護膠膜支撐於環狀框架上的態樣的立體圖，（b）係表示從支撐於框架上的晶圓剝離保護膠膜的態樣的立體圖。 圖8係表示拾取步驟的實施態樣的立體圖。
10‧‧‧晶圓
11‧‧‧半導體基板
12‧‧‧元件層
10b‧‧‧背面
30‧‧‧保護膠膜
50‧‧‧研削裝置
51‧‧‧卡盤台
52‧‧‧研削單元
100‧‧‧切割槽
110‧‧‧改質層
112‧‧‧分割線
521‧‧‧主軸
522‧‧‧安裝座
523‧‧‧研削輪
524‧‧‧砂輪
R1、R2‧‧‧旋轉方向

Claims (3)

  1. 一種晶圓加工方法，其係將晶圓分割成各個元件晶片，該晶圓係在半導體基板的正面層積有元件層，並且具有多個元件被交叉的多條分割預定線所劃分而形成於該元件層上的正面；該晶圓加工方法具備： 切割槽形成步驟，其係將切割刀片定位於晶圓的正面，切割層積於該分割預定線上的該元件層，形成切割槽； 改質層形成步驟；其係從晶圓的背面，將對該半導體基板具有穿透性的波長的雷射光線的聚光點定位於與該分割預定線對應的該半導體基板的內部而進行照射，沿著該分割預定線連續形成改質層； 保護構件配設步驟，其係在該改質層形成步驟之前或後，在晶圓的正面配設保護構件；以及 分割步驟，其係將該晶圓的該保護構件側保持於卡盤台上，研削晶圓的背面而薄化晶圓，同時從形成於分割預定線內部的改質層使裂痕在正面側成長而將晶圓分割成各個元件晶片。
  2. 如申請專利範圍第1項所述之晶圓加工方法，其中， 進一步具備：框架支撐步驟，其係在實施該分割步驟之後，在晶圓的背面黏貼切割膠膜，並且以具有容納晶圓的開口的環狀框架透過切割膠膜而支撐晶圓，並且從晶圓的正面剝離保護構件。
  3. 如申請專利範圍第2項所述之晶圓加工方法，其中， 進一步具備：拾取步驟，其係在該框架支撐步驟之後，擴張該切割膠膜，擴大元件晶片的間隔，拾取該元件晶片。
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