201133716 六、發明說明： c發明戶斤屬之技術領域3 發明領域 本發明係有關於一種晶圓之加工方法，該晶圓之加工 方法係將複數個切割道於表面形成格子狀，並且，於以該 複數個切割道所劃分之複數個區域形成有元件之晶圓沿著 切割道分割者。 c先前技術3 發明背景 在半導體元件製程中，以於略圓板狀之半導體晶圓表 面排列成格子狀之稱為切割道的分割預定線劃分複數個區 域，並於此劃分之區域形成IC、LSI等元件。然後，藉將晶 圓沿著切割道切斷，分割形成有元件之區域，而製造了諸 個元件。 在最近，為提高IC、LSI等半導體元件之處理能力，下 述形態之半導體晶圓已實用化，前述形態係以於矽等半導 體基板表面積層由SiOF、BSG(SiOB)等無機物系膜或聚醯 亞胺系、聚對二曱苯等為聚合物膜之有機物系膜構成的低 介電常數絕緣體被覆膜（Low-k膜）及用以形成電路之機能 膜的積層體使半導體元件形成者。 又，光元件製程中，於為約圓板形之藍寶石基板表面 積層由η型氮化物半導體層及p型氮化物半導體層構成之光 元件層，並於以形成格子狀之複數個切割道劃分之複數個 區域形成發光二極體、雷射二極體等光元件，而構成光元 201133716 件晶圓。又，藉將光元件晶圓沿著切割道分割，而分割形 成有光元件之區域，而製造了諸個光元件。 下述雷射加工方法作為將上述半導體晶圓或光元件晶 圓等晶圓沿著切割道分割之方法已實用化，前述雷射加工 方法係使用對晶圓具穿透性之波長之脈衝雷射光線，使聚 光點對準要分割之區域之内部來照射雷射光線者。使用此 雷射加工方法之分割方法係從晶圓之一面側將聚光點對準 内部，來照射對晶圓具穿透性之波長之脈衝雷射光線，而 於晶圓内部沿著切割道連續形成變質層，沿著因形成此變 質層而強度降低之切割道施加外力，藉此，將晶圓斷開分 割者，可將切割道之寬度縮窄（參照專利文獻1)。 先行技術文獻 專利文獻 專利文獻1日本專利公開公報2006-12902號 【發明内容】 發明概要 發明欲解決之課題 然而，即使欲使用上述雷射加工方法，來分割於表面 積層有低介電常數絕緣體被覆膜(Low-k膜）或光元件層等 機能層之晶圓，也無法沿著切割道確實地分割。即，從晶 圓之一面側將聚光點對準内部，照射對晶圓具穿透性之波 長之脈衝雷射，而於晶圓内部沿著切割道形成變質層後， 即使沿著切割道賦與外力，仍無法將低介電常數絕緣體被 覆膜(Low-k膜）或光元件層等機能層確實地斷開。又，即使 201133716 ^ =著切割道斷開，機能層仍如__離，而有㈣ 個刀割之元件之品質降低之問題。 =發明係鑑於上述事實而發明者，其主要之技術性課 2提供將於表面制有機能層之㈣沿㈣定切割道確 貫地斷開之晶圓之分割方法。 用以欲解決課題之手段 為解決上述主要之技術性課題，根據本發明，提供一 =圓之加工方法，該晶圓之加工方法係將於基板表面積 元=層，並形成有複數個虎鉗之晶圓沿著劃分該複數個 ==割道分割者，其特徵在於具有機能層分離步驟、 呆4構件裝設步驟、背面研磨 圓切步驟及晶_步驟，_層==晶 積層於基板表 之波長之雷射光線，而形成雷 ri 著切割道分離者，護構件裝設步驟係==:广 :業經施行該機能層分離步驟之晶圓表面者;該：附 ::係研磨構成貼附有該保護構件之晶圓之基^ ::質層形成步驟係將對構成業經施行該背面研磨步：; 道照射，而於基板之内部基板之背面側沿著切割 圓切步驟係將構成業經：，成變質層者;該晶 基板背面諸於裝設在㈣形録驟之晶圓之 且，將貼附於晶圓表面之保二之切割膠帶的表面，並 驟係對貼附在切割膠帶表面=剝離者;該晶圓斷開步 面之晶圓賦與外力，以將晶圓机 201133716 著切割道斷開者。 又，晶圓具有形成有元件之元件區域及圍繞該元件區域 之外周剩餘區域，該機能層分離步驟沿著該元件區域之切割 道，照射雷射光線，該變質層形成步驟具有錯位確認步驟， 該錯位確認步驟係照射至在該外周剩餘區域之切割道之延 長線上，而於基板内部形成確認用變質層，以確認該確認用 變質層與沿著切割道所形成之雷射加工溝之位置錯位者。 發明效果 在本發明之晶圓之加工方法中，施行對於基板内部沿 著切割道形成有變質層之晶i賦與外力，將晶圓沿著切割 道斷開之晶圓斷開步驟之際，由於構成晶圓之機能層在機 能層分離步驟，以所形成之雷射加工溝，沿著切割道分離， 故於晶圓沿著切割道斷開之際，不致剝離，而可解決因機 能層剝離，而使元件之品質降低之問題。 圖式簡單說明 第1圖係顯示作為以本發明晶圓之加工方法分割之晶 圓之半導體晶圓的立體圖。 第2圖係第1圖所示之半導體晶圓之截面放大圖。 第3圖係用以實施本發明晶圓之加工方法之機能層分 離步驟之雷射加工裝置的主要部份立體圖。 第4(a)圖〜第4(c)圖係顯示本發明晶圓之加工方法之機 能層分離步驟的說明圖。 第5圖係業經施行第4圖所示之機能層分離步驟之半導 體晶圓的截面放大圖。 201133716 第6圖係業經施行第4圖所示之機能層分離步驟之半導 體晶圓的平面圖。 第7(a)圖、第7〇3)圖係顯示本發明晶圓之加工方法之保 護構件裝設步驟的說明圖。 第8圖係用以施行本發明晶圓之加工方法之研磨步驟 之研磨裝置的主要部份立體圖。 第9圖係顯示本發明晶圓之加工方法之研磨步驟的說 明圖。 第1 〇圖係用以實施本發明晶圓之加工方法之變質層形 成步驟之雷射加工裝置的主要部份立體圖。 第11(a)圖、第U(b)圖係顯示本發明晶圓之加工方法之 確認用變質層形成步驟的說明圖。 第12(a)圖、第12(b)圖係顯示本發明晶圓之加工方法之 錯位確認步驟之說明圖。 第13(a)圖、第13(b)圖係顯示本發明晶圓之加工方法之 變質層形成步驟的說明圖。 第14圖係業經施行第13圖所示之變質層形成步驟之光 元件晶圓的截面放大圖。 第15(a)圖、第15(b)圖係顯示本發明晶圓之加工方法之 晶圓支樓步驟的說明圖。 第16圖係用以施行本發明晶圓之加工方法之晶圓斷開 步驟之膠帶擴張裝置的立體圖。 第17(a)圖、第17(b)圖係顯示本發明晶圓之加工方法之 晶圓斷開步驟的說明圖。 201133716 【實施令式】 用以實施發明史形離 以下，就本發明之晶圓之加工方法，參照附加圖式， 進一步詳細說明。 於第1圖顯示以本發明晶圓之加工方法分割成諸個晶 圓之半導體晶圓的立翻，於第2圖顯示第1圖所示之半導 體曰a圓之主要部份放大截面ϋ。第1圖及第2圖所示之半導 體晶圓2係以於料半導體基板2G之表面2Ga積層絕緣膜及 形成電路之機能膜之機能層21，將複數個ic、US等元件22 形成矩陣狀。此外’在圖中所示之實施形態中，形成機能 層21之絕緣膜係由以Si〇2膜或si〇F、BSG(si〇B)等無機物 系之膜或者聚醯亞胺系、聚對二甲苯系等聚合膜之有機物 系膜構成之低介電常數絕緣體被覆膜(L〇w_k膜）構成。此 外，圖中所示之實施形態之半導體晶圓2係於厚度“以爪之 半導體基板20之表面20a積層厚度5//m之機能層21而形 成如此構成之半導體晶圓2具有形成有元件22之元件區域 22及圍繞該元件區域220之外周剩餘區域24〇。 要將上述半導體晶圓2沿著切割道23分割，首先施行機 月匕層刀離步驟，該機能層分離步驟係對機能層21沿著切割 道23照射對積層於半導體基板2()之表面施之機能層21具 收丨生之波長的雷射光線，以將機能層21沿著切割道23分 離者。此機能層分離步驟使用第3圖所示之雷射加工裝置來 施行。第3圖所示之雷射加工裝置3具有保持被加工物之吸 盤台31、對保持在該吸盤台31上之被加卫物照射雷射光線 201133716 之雷射光線照射機構32、及拍攝保持在吸盤台31上之被加 工物之拍攝機構33。吸盤台31構造成吸引保持被加工物， 藉圖中未示之加工進給機構於第3圖中以箭號X所示之加工 進給方向移動，並且藉圖中未示之分度進給機構於箭號Y 所示之分度進給方向移動。 上述雷射光線照射機構32具有實質上配配置成水平之 圓筒形殼體321。於殼體321内配設有脈衝雷射光線振盪機 構，該脈衝雷射光線振盪機構具有由圖中未示之YAG雷射 振盪器或YV04雷射振盪器構成之脈衝雷射光線振盪器及 重複頻率設定機構。於上述殼體321之前端部裝設有用以將 從脈衝雷射光線振盪機構振盪之脈衝雷射光線聚光之聚光 器 322。 裝設於構成上述雷射光線照射機構32之殼體321前端 部之拍攝機構33在圖中所示之實施形態中，以以可視光線 拍攝之一般拍攝器件(CCD)、還有對被加工物照射紅外線之 紅外線照明機構、捕捉以該紅外線照明機構所照射之紅外 線之光學系統、輸出對應於以該光學系統所捕捉之紅外線 之電信號的拍攝器件（紅外線CCD)等構成，並將所拍攝之圖 像信號傳送至圖中未示之控制機構。 要使用上述雷射加工裝置3，來執行機能層分離步驟係 如第3圖所示’將構成半導體晶圓2之半導體基板2〇之背面 20b載置於吸盤台31上。然後’以圖中未示之吸引機構，將 半導體晶圓2吸附保持於吸盤台31上（晶圓保持步驟）。因 而’吸引保持在吸盤台31之半導體晶圓2係以機能層21之表 201133716 面20a為上側。 如上述吸引保持有半導體晶圓2之吸盤台31以圖中未 不之加工進給機構移動至拍攝機構33之正下方。當吸盤台 31置於拍攝機構33之正下方時，以拍攝機構33及圖中未示 之控制機構執行檢測半導體晶圓2之要雷射加工之區域的 权準作業°即’拍攝機構33及圖中未示之控制機構執行用 以進行形成於構成半導體晶圓2之機能層21之預定方向的 切割道2 3與沿著切割道2 3照射雷射光線之雷射光線照射機 構32之聚光器322之對位的圖形匹配等圖像處理，而完成執 行雷射光線照射位置之校準。又，對，形成在構成半導體 晶圓2之機能層21，並於相對於上述預定方向垂直相交之方 向延伸的切割道23也同樣地完成執行雷射光線照射位置之 校準。 當如以上進行，檢測形成於保持在吸盤台3丨上之半導 體晶圓2之切割道23，進行雷射光線位置之校準後，如第4(a) 圖所示，將吸盤台31移動至照射雷射光線之雷射光線照射 機構32之聚光器322所在的雷射光線照射區域，將預定之切 割道23置於聚光器322之正下方。此時，如第4(a)圖及第4(b) 圖所示’半導體晶圓2被置成元件區域22〇之切割道23之劃 分元件22的一端部位於聚光器322之正下方。然後，將從雷 射光線照射機構3 2之聚光器3 2 2照射之脈衝雷射光線的聚 光點P對準機能層21之上面。接著，—面從雷射光線照射機 構3 2之聚光器3 2 2照射對機能層21具吸收性之波長之脈衝 雷射光線，一面使吸盤台31於第4(a)圖中以箭號XI所示之 10 ⑤ 201133716 方向以預定加工進給速度移動（機能層分離步驟）。接著，如 第4(c)圖所示，當元件區域220之切割道23之劃分元件22之 另一端部到達聚光器322之正下方位置後，停止脈衝雷射光 線之照射，同時’停止吸盤台31之移動。結果，如第4(c) 圖及第5圖所示，於構成半導體晶圓2之機能層21形成雷射 加工溝211，機能層21可沿著切割道23分離。 此外’上述機能層分離步驟以以下之加工條件進行。 雷射光線之光源 ：YV04、YAG脈衝雷射 355nm 100kHz 0.5W 10以m 3 00mm/秒 波長 重複頻率 輸出 聚光點徑 加工進給速度 當如此進行，沿著半導體晶圓2之元件區域220之於預 定方向延伸之所有切割道23執行上述機能層分離步驟後， 使吸盤台31旋動90度，沿著相對於上述預定方向以直角延 伸之各切割道23，執行上述機能層分離步驟。結果，在構 成半導體晶圓2之機能層21，如第6圖所示，僅於以元件區 域220之切割道23劃分元件22之部份形成雷射加工溝 當施行上述機能層分離步驟後，施行將保護構件貼附 於構成半導體晶圓2之機能層21之表面化的保護構件裝設 步驟。即’如第7⑷圖及第胸圖所示，於構成沿著切⑽ 23形成有雷射加工溝211之半導體晶圓&機能層 2威附倾構件4絲⑭。此賴鱗4❹氣 201133716 成樹脂片。 當執彳于上述保護構件裝設步驟後，執行研磨構成貼附 有保護構件4之半導體晶圓2之半導體基板20背面20b，使背 面形成平滑面之背面研磨步驟。此背面研磨步驟使用第8圓 所示之研磨裝置5來執行。第8圖所示之研磨裝置5具備保持 被加工物之吸盤台51 '研磨保持在該吸盤台51之被加工物 之研磨機構52。吸盤台51將被加工物吸引保持於上面，使 之於第8圖中以箭號51a所示之方向旋轉。研磨機構52具備 心軸殼521、旋轉自如地支撐於該心軸殼521，並以圖中未 示之旋轉驅動設備使其旋轉之旋轉心軸522、裝設於該旋轉 心軸522下端之座523、安裝於該座523下面之研磨工具 524。此研磨工具524由圓板狀基台525、裝設於該基台525 下面之研磨墊或磨石526構成，基台525以緊固螺栓527安裝 於座523之下面。此外，研磨墊或磨石526形成直徑較作為 被加工物之半導體晶圓2之直徑大之值。 要使用上述研磨裝置5，研磨構成上述半導體晶圓2之 半導體基板20之背面20b，如第8圖及第9圖所示，將貼附於 構成半導體晶圓2之機能層21之表面21a的保護構件4側载 置於吸盤台51之上面（保持面）。然後，以圖中未示之吸引機 構將半導體晶圓2以保護構件4為中介’吸附保持於吸盤台 51上。因而，保持在吸盤台51上之半導體晶圓2係以半導體 基板20之背面20b為上側。如此’當以保護構件4為中介， 將半導體晶圓2吸引保持於吸盤台51上後’ 一面以6〇rpm將 吸盤台51於第9圖以箭號51a所示之方向旋轉，一面以 12 ⑤ 201133716 1200rpm使研磨機構52之研磨工具或磨石524於第9圖以箭 號524a所示之方向旋轉，如第9圖所示，使研磨墊或磨石526 接觸構成半導體晶圓2之半導體基板20之背面20b，而以預 定壓力（例如100N)按壓來研磨。 接著，施行變質層形成步驟，該變質層形成步驟係將 對形成為已施行背面研磨步驟之預定厚度，並且背面形成 平滑面之構成半導體晶圓2之半導體基板20具穿透性之波 長的雷射光線從半導體基板20之背面20b側沿著切割道23 照射，而於半導體基板20之内部沿著切割道23形成變質層 者。此變質層形成步驟可使用與上述第3圖所示之雷射加工 裝置3實質上相同之雷射加工裝置，變更脈衝雷射光線之波 長來施行。因而，以下所述之變質層形成步驟使用與第3圖 所示之雷射加工裝置3之標號相同之標號來說明。 要使用上述雷射加工裝置3，執行變質層形成步驟係如 第10圖所示，將半導體晶圓2之保護構件4側載置於雷射加 工裝置3之吸盤台31上。然後，以圖中未示之吸引機構，將 半導體晶圓2以保護構件4為中介，吸附保持於吸盤台31上 (晶圓保持步驟）。因而，吸引保持在吸盤台31上之半導體晶 圓2係以半導體基板20之背面2〇b為上側。 如上述’當施行晶圓保持步驟後，吸引保持有半導體 晶圓2之吸盤台31以圖中未示之加工進給機構，置於拍攝機 構33之正下方。然後’以拍攝機構33及圖中未示之控制機 構執行檢測半導體晶圓2之要雷射加工之加工區域的校準 作業。即，拍攝機構33及圖中未示之控制機構執行用以進 13 201133716 行形成於構成半導體晶圓2之預定方向之切割道23與沿著 此切割道23騎雷射切之雷射光線照射機構32之聚光器 322之對位的®形匹配等圖像處理，而完成執行雷射光線照 射位置之校準。又’對形成在半導體晶圓2，並於相對於上 述預定方向垂直相交之方向延伸的切割道23也同樣地完成 執订雷射光線照射位置之校準（校準步驟^此時，半導體晶 圓2之形成有切割道23之機能層21的表面2U位於下側，由 於拍攝機構33如上述具有紅外線照明機構、及以捕捉紅外 線之光學系統與輸出對應於紅外線之電信號的拍攝元件 (紅外線CCD)等構成之拍攝機構，故可從半導體基板2〇之背 面20b透過，拍攝切割道23。 當如以上進行，施行校準步驟後，如第11(a)圖所示， 將吸盤台31移動至照射雷射光線之雷射光線照射機構32之 聚光器322所在之雷射光線照射區域，將半導體晶圓2之外 周剩餘區域240之預定切割道23的一端部（在第u(a)圖為左 端部）置於雷射光線照射機構32之聚光器322之正下方。然 後，將脈衝雷射光線之聚光點P對準半導體基板2〇之厚度方 向中央部。接著，一面從聚光器322照射對半導體基板2〇具 穿透性之波長之脈衝雷射光線，一面使吸盤台Μ於第〗i(a) 圖以箭號XI顯示之方向移動數毫米。結果，如第u(b)圖所 示’在構成半導體晶圓2之半導體基板20,於外周剩餘區域 24〇之形成有雷射加工溝211之切割道23之延長線上的内部 形成確認用變質層201(確認用變質層形成步驟）。此外，確 認用變質層形成步驟之加工條件可與後述變質層形成步驟 14 ⑤ 201133716 之加工條件相同。 當如上述形成確認用變質層2〇 1後，將吸引保持有半導 體晶圓2之吸盤台31置於拍攝機構33之正下方，如第12(a) 圖所示，將形成有確認用變質層201及上述雷射加工溝211 之區域置於拍攝機構33之正下方。然後，將拍攝機構33作 動’拍攝开> 成有確認用變質層201及雷射加工溝211之切割 道23，如第12(b)圖所示，將所拍攝之圖像傳送至圖中未示 之控制機構。此時，確認用變質層2〇1形成於半導體基板2〇 之内部，雷射加工溝211位於下側，而由於拍攝機構如上述 具有紅外線照明機構及以捕捉紅外線之光學系統與輸出對 應於紅外線之電信號之拍攝元件（紅外線CCD)等構成的拍 攝機構’故可從半導體基板20之背面2〇b透過，拍攝切割道 23。輸入有從拍攝機構33傳送之圖像信號之控制信號確認 確認用變質層201是否形成於雷射加工溝211之延長線上， 即，確認確認用變質層201是否未與雷射加工溝211錯位（錯 位確認步驟）。若確認用變質層201從雷射加工溝211之延長 線上錯位時，將圖中未示之分度進給機構作動，以調整成 雷射加工溝211之延長線上在雷射光線照射機構32之聚光 器322之正下方（晶圓調整步驟）。 當施行上述晶圓調整步驟後，如第13(a)圖所示，將吸 盤台31移動至照射雷射光線之雷射光線照射機構3 2之聚光 器322所在之雷射光線照射區域，將預定之切割道23之一端 (在第13(a)圖為左端）置於雷射光線照射機構32之聚光器 322之正下方。然後，將脈衝雷射光線之聚光點p對準半導 15 201133716 體基板20之厚度方向中央部。接著，一面從聚光器322照射 對半導體基板20具穿透性之波長之脈衝雷射光線，一面使 吸盤台31於第13 (a)圖以箭號X1所示之方向以預定進給速 度移動。然後，如第13(b)圖所示，當聚光器322之照射位置 到達切割道23之另一端之位置後，便停止雷射光線之照 射，同時，停止吸盤台31之移動。結果，如第13(b)圖及第 14圖所示’在構成半導體晶圓2之半導體基板20，於内部沿 著切割道23 ’形成變質層202(變質層形成步驟）。施行此變 質層形成步驟之際’由於在上述錯位確認步驟，確認確認 用變質層201是否形成於沿著切割道23而形成之雷射加工 溝211之延長線上’並調整成雷射光線照射機構32之聚光器 322位於雷射加工溝211之延長線上（晶圓調整步驟），故以變 質層形成步驟形成之變質層202於雷射加工溝211沿著寬度 方向之中間位置形成。此外，由於構成業經施行變質層形 成步驟之半導體晶圓2之半導體基板20之背面20b經施行上 述背面研磨步驟而形成平滑面，故可在照射之雷射光線不 亂反射下’將聚光點置於預定位置，來施行變質層形成步驟。 此外，上述變質層形成步驟之加工條件如以下設定。 雷射光線之光源 波長 YV04、YAG脈衝雷射 1064nm201133716 VI. Description of the Invention: The invention relates to a method for processing a wafer, the method of processing the wafer is to form a plurality of dicing streets on the surface into a lattice shape, and A plurality of regions in which the plurality of regions are formed by the plurality of dicing streets are formed along the scribe line. C. Prior Art 3 In the semiconductor device manufacturing process, a plurality of regions are divided by a predetermined dividing line called a dicing street which is arranged in a lattice shape on a surface of a substantially disk-shaped semiconductor wafer, and an IC is formed in the divided region. Components such as LSI. Then, by cutting the crystal circle along the dicing street, the regions where the components are formed are divided, and the components are manufactured. Recently, in order to improve the processing capability of semiconductor devices such as ICs and LSIs, semiconductor wafers of the following forms have been put into practical use. The above-described embodiments are based on inorganic material films such as SiOF or BSG (SiOB) or aggregated on a surface area of a semiconductor substrate such as germanium. A low dielectric constant insulator coating film (Low-k film) composed of an organic film of a polymer film such as a quinone imine or a poly(p-quinone), and a laminate of a functional film for forming a circuit to form a semiconductor element By. Further, in the optical element manufacturing process, the optical element layer composed of the n-type nitride semiconductor layer and the p-type nitride semiconductor layer in the surface area of the sapphire substrate having a circular disk shape is divided into a plurality of dicing streets formed in a lattice shape. The plurality of regions form an optical element such as a light-emitting diode or a laser diode, and constitute a light source 201133716 wafer. Further, by dividing the optical element wafer along the dicing street and dividing the area where the optical element is formed, the optical elements are manufactured. The laser processing method described below has been put into practical use as a method of dividing a wafer such as the semiconductor wafer or an optical element wafer along a dicing line, and the laser processing method uses a pulsed laser having a wavelength that is transparent to the wafer. Rays are emitted so that the spotlight is directed at the interior of the area to be illuminated to illuminate the laser beam. The method of segmentation using this laser processing method is to align the condensed spot from the inside of one side of the wafer to illuminate the pulsed laser light having a wavelength that is transparent to the wafer, and to follow the scribe line inside the wafer. By continuously forming the altered layer, an external force is applied along the scribe line whose strength is lowered by the formation of the altered layer, whereby the wafer is broken and the width of the scribe line can be narrowed (see Patent Document 1). PRIOR ART DOCUMENT PATENT DOCUMENT Patent Document 1 Japanese Patent Laid-Open Publication No. 2006-12902 SUMMARY OF INVENTION Technical Problem However, even if a laser processing method is used, a low dielectric constant insulator is divided into a surface area layer. A wafer of a functional layer such as a film (Low-k film) or an optical element layer cannot be surely divided along the dicing street. That is, the condensed spot is aligned from the inside of one side of the wafer, and a pulsed laser having a wavelength penetrating the wafer is irradiated, and after the metamorphic layer is formed along the scribe line inside the wafer, even along the scribe line With the application of an external force, it is still impossible to reliably disconnect the functional layer such as the low dielectric constant insulator coating (Low-k film) or the optical element layer. Moreover, even if 201133716 ^ = the cutting track is broken, the functional layer is still as __ away, and there is a problem that the quality of the (four) knife-cut components is reduced. The invention is invented in view of the above facts, and its main technical lesson 2 provides a method of dividing the wafer which is to be surely disconnected along the (4) fixed scribe line of the surface organic energy layer. Means for Solving the Problem In order to solve the above-mentioned main technical problems, according to the present invention, a method for processing a circle is provided, and the wafer processing method is to form a substrate surface element=layer and form a plurality of vise The wafer is divided along the plurality of == secant segments, and is characterized by having a functional layer separation step, a staying member mounting step, a back grinding round cutting step, and a crystal _ step, _ layer == crystal layer on the substrate The laser light of the wavelength of the table, and the formation of the lightning ri separation of the cutting channel, the step of installing the protective member is ==: wide: the surface of the wafer that performs the separation step of the functional layer; The base layer of the wafer to which the protective member is attached is formed by performing the back grinding step on the surface of the substrate, and the step of cutting along the cutting circle on the back side of the inner substrate of the substrate The composition is: a metamorphic layer; the back surface of the crystal substrate is mounted on the wafer of the (4) recording step, and is attached to the surface of the dicing tape of the wafer surface, and is attached to the surface. On the surface of the cutting tape = peeler; the wafer is broken The wafer in the open step is given an external force to disconnect the wafer cutter 201133716. Further, the wafer has an element region in which the component is formed and a remaining region around the periphery of the component region, and the functional layer separation step irradiates the laser beam along the dicing street of the component region, and the metamorphic layer forming step has a dislocation confirmation step. The misalignment confirming step is performed by irradiating an extension line of the dicing street in the remaining area of the outer periphery, and forming a confirming metamorphic layer inside the substrate to confirm the position of the confirming metamorphic layer and the laser processing groove formed along the scribe line. Misplaced. Advantageous Effects of Invention In the method for processing a wafer according to the present invention, when a wafer having a modified layer formed along a scribe line is provided with an external force and a wafer is broken along the scribe line, the wafer is disconnected. Since the functional layer constituting the wafer is separated in the functional layer, the formed laser processing groove is separated along the scribe line, so that the function layer is not peeled off when the wafer is broken along the scribe line. Peeling, which reduces the quality of the components. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view showing a semiconductor wafer which is a wafer which is divided by the processing method of the wafer of the present invention. Fig. 2 is an enlarged cross-sectional view showing the semiconductor wafer shown in Fig. 1. Fig. 3 is a perspective view showing the main part of a laser processing apparatus for carrying out the functional layer separation step of the wafer processing method of the present invention. 4(a) to 4(c) are explanatory views showing the functional layer separation step of the wafer processing method of the present invention. Fig. 5 is an enlarged cross-sectional view showing a semiconductor wafer subjected to the functional layer separation step shown in Fig. 4. 201133716 Fig. 6 is a plan view of a semiconductor wafer subjected to the functional layer separation step shown in Fig. 4. Fig. 7(a) and Fig. 7(3) are explanatory views showing the steps of installing the protective member of the wafer processing method of the present invention. Fig. 8 is a perspective view showing the main part of a polishing apparatus for carrying out the grinding step of the processing method of the wafer of the present invention. Fig. 9 is an explanatory view showing a grinding step of the processing method of the wafer of the present invention. Fig. 1 is a perspective view showing a main part of a laser processing apparatus for performing a metamorphic layer forming step of the wafer processing method of the present invention. Figs. 11(a) and 9(b) are explanatory views showing the steps of forming the modified metamorphic layer for the processing method of the wafer of the present invention. Fig. 12(a) and Fig. 12(b) are explanatory views showing the steps of confirming the misalignment of the wafer processing method of the present invention. Figs. 13(a) and 13(b) are explanatory views showing the steps of forming the altered layer in the method of processing the wafer of the present invention. Fig. 14 is an enlarged cross-sectional view showing the wafer of the optical element in which the metamorphic layer forming step shown in Fig. 13 is carried out. Fig. 15(a) and Fig. 15(b) are explanatory views showing the steps of the wafer branch of the wafer processing method of the present invention. Figure 16 is a perspective view of a tape expanding device for performing a wafer breaking step of the wafer processing method of the present invention. Figs. 17(a) and 17(b) are explanatory views showing a wafer disconnecting step of the wafer processing method of the present invention. 201133716 [Implementation Formula] The present invention is used to describe the processing method of the wafer. The method for processing the wafer of the present invention will be described in further detail with reference to the additional drawings. Fig. 1 shows a vertical turn of a semiconductor wafer divided into a plurality of wafers by the method for processing a wafer of the present invention, and Fig. 2 shows a main portion enlarged cross section of the circle 曰a of the semiconductor shown in Fig. 1. The semiconductor wafer 2 shown in Fig. 1 and Fig. 2 is formed by forming a matrix of a plurality of ic, US, etc. elements 22 on the surface of the semiconductor substrate 2G by a 2G build-up insulating film and a functional layer 21 forming a functional film of the circuit. . Further, in the embodiment shown in the drawings, the insulating film forming the functional layer 21 is made of a film of an inorganic substance such as a Si〇2 film, a Si〇F or a BSG (si〇B), or a polyimine. A low dielectric constant insulator coating film (L〇w_k film) composed of an organic film of a polymer film such as xylene. Further, the semiconductor wafer 2 of the embodiment shown in the drawing is formed of a functional layer 21 having a thickness of 5/m in the surface 20a of the semiconductor substrate 20 of the claw, and the semiconductor wafer 2 thus formed has the formed component. The component region 22 of 22 and the peripheral remaining region 24 around the component region 220. To divide the semiconductor wafer 2 along the dicing street 23, first, a machine layer delamination step is performed, and the functional layer separation step is functional. The layer 21 illuminates the laser beam having a wavelength at which the functional layer 21 applied to the surface of the semiconductor substrate 2 is laminated along the dicing street 23 to separate the functional layer 21 along the dicing street 23. This functional layer The separation step is carried out using the laser processing apparatus shown in Fig. 3. The laser processing apparatus 3 shown in Fig. 3 has a chuck table 31 for holding a workpiece, and an object to be held on the chuck table 31. a laser beam irradiation mechanism 32 for irradiating the laser beam 201133716, and a photographing mechanism 33 for photographing the workpiece held on the chuck table 31. The chuck table 31 is configured to attract and hold the workpiece, and the feed is not shown in the drawing. Institution 3 The movement is moved in the machining feed direction indicated by the arrow X, and is moved by the indexing feed mechanism not shown in the figure in the indexing feed direction indicated by the arrow Y. The above-described laser beam irradiation mechanism 32 has substantially The cylindrical housing 321 is disposed in a horizontal direction. A pulsed laser oscillating mechanism is disposed in the housing 321 , and the pulsed laser oscillating mechanism has a YAG laser oscillator or a YV04 laser not shown. A pulsed laser ray oscillator and a repetition frequency setting mechanism are formed by the oscillator, and a concentrator 322 for concentrating the pulsed laser light oscillated from the pulsed laser ray oscillating mechanism is disposed at a front end of the casing 321 . The imaging mechanism 33 mounted on the front end portion of the casing 321 constituting the above-described laser beam irradiation mechanism 32 is a general imaging device (CCD) that captures light in visible light, and a workpiece to be processed, in the embodiment shown in the drawing. An infrared ray illumination mechanism that illuminates infrared rays, an optical system that captures infrared rays that are irradiated by the infrared illumination mechanism, and an imaging device that outputs an electrical signal corresponding to infrared rays captured by the optical system (infrared CC) D) and the like, and transmitting the captured image signal to a control mechanism not shown in the figure. To perform the functional layer separation step using the above-described laser processing apparatus 3, as shown in Fig. 3, the semiconductor crystal will be formed. The back surface 20b of the semiconductor substrate 2 of the circle 2 is placed on the chuck table 31. Then, the semiconductor wafer 2 is adsorbed and held on the chuck table 31 by a suction mechanism (not shown) (the wafer holding step). The semiconductor wafer 2 held and held by the chuck table 31 is on the upper side of the surface 2011a 16a of the function layer 21. The chuck table 31 holding the semiconductor wafer 2 is moved to the photographing mechanism in the drawing. Directly below the mechanism 33. When the chuck table 31 is placed directly under the photographing mechanism 33, the photographing mechanism 33 and a control mechanism not shown in the figure perform the inspection operation for detecting the area of the semiconductor wafer 2 to be subjected to laser processing. That is, the photographing mechanism 33 and the control unit (not shown) perform the laser for irradiating the laser beam to the laser beam 21 along the cutting path 23 formed in the predetermined direction of the functional layer 21 constituting the semiconductor wafer 2. Light irradiation machine The condenser 32 of the 322-bit image processing such as pattern matching, and complete the calibration of the irradiation position of the laser light is performed. Further, the alignment of the laser beam irradiation position is performed in the same manner in the dicing street 23 which is formed in the functional layer 21 constituting the semiconductor wafer 2 and which extends perpendicularly to the predetermined direction. When the dicing 23 formed on the semiconductor wafer 2 held on the chuck table 3 is detected as described above, after the calibration of the position of the laser beam is performed, as shown in FIG. 4(a), the chuck table 31 is moved to The laser beam irradiation area where the concentrator 322 of the laser beam irradiation mechanism 32 irradiates the laser light is placed, and the predetermined dicing street 23 is placed directly under the concentrator 322. At this time, as shown in FIGS. 4(a) and 4(b), the one end portion of the dividing element 22 in which the semiconductor wafer 2 is placed in the dicing street 23 of the element region 22 is located directly under the concentrator 322. . Then, the focused spot P of the pulsed laser light irradiated from the concentrator 3 2 2 of the laser beam irradiation means 3 2 is aligned on the upper surface of the functional layer 21. Then, the illuminator 3 2 2 of the laser beam illuminating mechanism 3 2 illuminates the pulsed laser light having a wavelength absorbing to the functional layer 21, and causes the chuck table 31 to take an arrow in the fourth (a) figure. The direction of 10 5 201133716 shown in No. XI is moved at a predetermined machining feed speed (functional layer separation step). Next, as shown in FIG. 4(c), when the other end of the dividing element 22 of the dicing street 23 of the element region 220 reaches the position directly below the concentrator 322, the irradiation of the pulsed laser light is stopped, and at the same time, 'stop The movement of the suction table 31. As a result, as shown in Figs. 4(c) and 5, the laser processing groove 211 is formed in the functional layer 21 constituting the semiconductor wafer 2, and the functional layer 21 can be separated along the dicing street 23. Further, the above functional layer separation step is carried out under the following processing conditions. Light source of laser light: YV04, YAG pulse laser 355 nm 100 kHz 0.5 W 10 at m 3 00 mm/sec wavelength repetition frequency output concentrating spot diameter processing feed speed is performed as follows, along the component region 220 of the semiconductor wafer 2 After all the cutting lanes 23 extending in the predetermined direction perform the above-described functional layer separating step, the chuck table 31 is rotated by 90 degrees, and the above-described functional layer separating step is performed along each of the cutting lanes 23 extending at right angles with respect to the predetermined direction. As a result, in the functional layer 21 constituting the semiconductor wafer 2, as shown in FIG. 6, only the portion of the element 22 divided by the dicing streets 23 of the element region 220 forms a laser processing groove, and after performing the above-described functional layer separation step, A protective member mounting step of attaching the protective member to the surface layer constituting the functional layer 21 of the semiconductor wafer 2 is performed. That is, as shown in Fig. 7(4) and the chest view, the semiconductor wafer & function layer 2 having the laser processing groove 211 formed along the slit (10) 23 is attached to the tilting member 4 wire 14. This Lai scale 4 helium 201133716 into a resin film. After the protective member mounting step is performed, the back surface polishing step of forming the back surface 20b of the semiconductor substrate 2 on which the semiconductor wafer 2 of the protective member 4 is attached is formed and the back surface is formed into a smooth surface. This back grinding step is carried out using the polishing apparatus 5 shown in the eighth circle. The polishing apparatus 5 shown in Fig. 8 is provided with a polishing mechanism 52 for holding a workpiece to be processed by the chuck table 51' of the workpiece. The chuck table 51 sucks and holds the workpiece on the upper surface, and rotates in the direction indicated by the arrow 51a in Fig. 8. The polishing mechanism 52 includes a spindle housing 521, and is rotatably supported by the spindle housing 521, and is rotated by a rotary driving device (not shown) to rotate the spindle 522, and is mounted on the lower end of the rotary spindle 522. 523. An abrasive tool 524 mounted under the seat 523. The abrasive tool 524 is composed of a disk-shaped base 525, a polishing pad or a grindstone 526 mounted under the base 525, and the base 525 is attached to the lower surface of the seat 523 by fastening bolts 527. Further, the polishing pad or the grindstone 526 is formed to have a larger diameter than the diameter of the semiconductor wafer 2 as a workpiece. The back surface 20b of the semiconductor substrate 20 constituting the semiconductor wafer 2 is polished by the above-described polishing apparatus 5, and as shown in Figs. 8 and 9, attached to the surface 21a of the functional layer 21 constituting the semiconductor wafer 2. The side of the protective member 4 is placed on the upper surface (holding surface) of the chuck table 51. Then, the semiconductor wafer 2 is adsorbed and held on the chuck table 51 by the protective member 4 by a suction mechanism not shown. Therefore, the semiconductor wafer 2 held on the chuck table 51 has the back surface 20b of the semiconductor substrate 20 as the upper side. Thus, when the semiconductor wafer 2 is sucked and held on the chuck table 51 by the protective member 4, the chuck table 51 is rotated at a direction of arrow 51a at 9 rpm on one side, and 12 5 201133716 1200 rpm causes the grinding tool or grindstone 524 of the grinding mechanism 52 to rotate in the direction indicated by arrow 524a in FIG. 9, and as shown in FIG. 9, the polishing pad or grindstone 526 is brought into contact with the semiconductor constituting the semiconductor wafer 2. The back surface 20b of the substrate 20 is pressed to be pressed at a predetermined pressure (for example, 100 N). Next, a metamorphic layer forming step is performed, which is a step of forming a laser having a predetermined thickness which has been subjected to a back grinding step and having a smooth surface formed on the semiconductor substrate 2 of the semiconductor wafer 2 having a transparent surface. The incident light is irradiated along the scribe line 23 from the back surface 20b side of the semiconductor substrate 20, and the deteriorated layer is formed along the scribe line 23 inside the semiconductor substrate 20. This altered layer forming step can be carried out by changing the wavelength of the pulsed laser light using a laser processing apparatus substantially the same as that of the laser processing apparatus 3 shown in Fig. 3 described above. Therefore, the altered layer forming step described below will be described using the same reference numerals as those of the laser processing apparatus 3 shown in Fig. 3. To perform the metamorphic layer forming step using the above-described laser processing apparatus 3, as shown in Fig. 10, the protective member 4 side of the semiconductor wafer 2 is placed on the chuck table 31 of the laser processing apparatus 3. Then, the semiconductor wafer 2 is adsorbed and held on the chuck table 31 by the protective member 4 by means of a suction mechanism (not shown) (wafer holding step). Therefore, the semiconductor wafer 2 held by the chuck table 31 is attracted to the upper side 2b of the semiconductor substrate 20. As described above, after the wafer holding step is performed, the chuck table 31 holding the semiconductor wafer 2 is sucked and placed under the photographing mechanism 33 by a processing feed mechanism (not shown). Then, the calibration operation for detecting the processing region of the semiconductor wafer 2 to be subjected to the laser processing is performed by the photographing mechanism 33 and a control mechanism not shown. That is, the photographing mechanism 33 and the control unit (not shown) perform the laser beam irradiation for cutting the laser beam 23 formed in the predetermined direction constituting the semiconductor wafer 2 and the laser cutting along the cutting path 23. The image of the concentrator 322 of the mechanism 32 is matched to the image processing, and the calibration of the position where the laser beam is irradiated is completed. Further, the calibration of the laser beam irradiation position is performed in the same manner for the dicing street 23 formed on the semiconductor wafer 2 and extending in a direction perpendicularly intersecting with the predetermined direction (calibration step), at this time, the semiconductor wafer 2 The surface 2U of the functional layer 21 on which the dicing street 23 is formed is located on the lower side, and the imaging mechanism 33 has an infrared ray illumination mechanism, an optical system for capturing infrared rays, and an imaging element (infrared CCD) that outputs an electrical signal corresponding to infrared rays. The imaging mechanism is configured to pass through the back surface 20b of the semiconductor substrate 2, and the scribe line 23 is photographed. When the calibration step is performed as described above, the chuck table 31 is moved to the irradiation as shown in Fig. 11(a). The laser beam irradiation region where the concentrator 322 of the laser beam irradiation mechanism 32 of the laser beam is located, and the one end portion of the predetermined dicing street 23 of the remaining region 240 of the semiconductor wafer 2 (in the u(a) diagram is The left end portion is placed directly under the concentrator 322 of the laser beam irradiation mechanism 32. Then, the condensed spot P of the pulsed laser beam is aligned with the center portion of the thickness direction of the semiconductor substrate 2 。. While illuminating the pulsed laser light of the wavelength of the semiconductor substrate 2 from the concentrator 322, the chuck table is moved by a few millimeters in the direction indicated by the arrow XI. As a result, as shown in Fig. 5(b), in the semiconductor substrate 20 constituting the semiconductor wafer 2, the deterioration of the inside of the extension line of the dicing street 23 on which the laser processing groove 211 is formed in the outer peripheral remaining region 24 is formed. The layer 201 (the step of forming the altered layer for confirmation). The processing conditions for confirming the step of forming the altered layer can be the same as the processing conditions of the modified layer forming step 14 5 201133716 described later. After forming the confirming layer 2〇1 as described above, The chuck table 31 holding the semiconductor wafer 2 is attracted to be directly under the photographing mechanism 33, and as shown in Fig. 12(a), the region where the confirming deterioration layer 201 and the laser processing groove 211 are formed is placed. Immediately below the photographing mechanism 33. Then, the photographing mechanism 33 is actuated to "shoot open", and the cut surface 23 for confirming the modified layer 201 and the laser processing groove 211 is formed, as shown in Fig. 12(b), The image is transmitted to the control not shown in the figure. At this time, it is confirmed that the altered layer 2〇1 is formed inside the semiconductor substrate 2〇, and the laser processing groove 211 is located on the lower side, and the imaging mechanism has the infrared illumination mechanism and the optical system for capturing infrared rays and the output as described above. The imaging unit configured by an imaging element (infrared CCD) such as an infrared electric signal can be transmitted from the back surface 2b of the semiconductor substrate 20, and the scribe line 23 can be imaged. The control of the image signal transmitted from the imaging unit 33 is input. Whether or not the modified layer 201 for confirming the signal is formed on the extension line of the laser processing groove 211, that is, whether or not the modified layer 201 for confirmation is not displaced from the laser processing groove 211 (dislocation confirmation step). When it is confirmed that the metamorphic layer 201 is displaced from the extension line of the laser processing groove 211, the indexing feed mechanism (not shown) is actuated to be adjusted to the extension line of the laser processing groove 211 at the laser beam irradiation mechanism 32. Directly below the concentrator 322 (wafer adjustment step). After performing the wafer adjustment step, as shown in FIG. 13(a), the chuck table 31 is moved to a laser beam irradiation region where the concentrator 322 of the laser beam irradiation mechanism 3 2 that irradiates the laser beam is irradiated. One end of the predetermined scribe line 23 (left end in Fig. 13(a)) is placed directly under the concentrator 322 of the laser beam illumination mechanism 32. Then, the light-converging point p of the pulsed laser light is aligned with the central portion in the thickness direction of the semiconductor substrate 20 of the semiconductor 31. Next, the pulsed laser beam having a wavelength penetrating the semiconductor substrate 20 is irradiated from the concentrator 322 while the chuck table 31 is at a predetermined feed speed in the direction indicated by the arrow X1 in the 13th (a) drawing. mobile. Then, as shown in Fig. 13(b), when the irradiation position of the concentrator 322 reaches the position of the other end of the dicing street 23, the irradiation of the laser beam is stopped, and at the same time, the movement of the chuck table 31 is stopped. As a result, as shown in Fig. 13(b) and Fig. 14, the modified substrate 202 is formed inside the semiconductor substrate 20 constituting the semiconductor wafer 2 along the dicing street 23' (the metamorphic layer forming step). At the time of performing the alteration layer forming step, it is confirmed that, in the above-described misalignment confirmation step, it is confirmed whether or not the deterioration layer 201 is formed on the extension line of the laser processing groove 211 formed along the scribe line 23 and is adjusted to a laser beam irradiation mechanism. The concentrator 322 of the 32 is located on the extension line of the laser processing groove 211 (wafer adjustment step), so that the altered layer 202 formed by the modified layer forming step is formed at the intermediate position in the width direction of the laser processing groove 211. In addition, since the back surface 20b of the semiconductor substrate 20 constituting the semiconductor wafer 2 subjected to the altered layer forming step is subjected to the above-described back grinding step to form a smooth surface, the spot light can be collected without being reflected by the irradiated laser light. It is placed at a predetermined position to perform a metamorphic layer forming step. Further, the processing conditions of the above-described altered layer forming step are set as follows. Source of laser light wavelength YV04, YAG pulse laser 1064nm
80kHz 0.2W :φΐ # m :200mm/秒 重複頻率 輸出 聚光點徑 加工進給速度 ⑤ 16 201133716 如以上進行，當沿著於半導體晶圓2之預定方向延伸么 所有切割道23，施行上述變質層形成步驟後，使吸盤台31 旋動90度，沿著於相對於上述預定方向垂直相交之方命延 伸之各切割道23，執行上述變質層形成步驟。 當如上述，施行變質層形成步驟後，施行晶圓支撐少 驟，該晶圓支撐步驟係將構成半導體晶圓2之半導體基板20 之背面貼附於裝設在環狀框架之切割膠帶表面，並且，剩 離貼附於晶圓表面之保護構件者。即，如第15(a)圖及第C(b) 圖所示，於外周部裝設成覆蓋環狀框架6之内側開口部之切 割膠帶7表面貼附構成半導體晶圓2之半導體基板2〇之背承 2〇b。然後’將貼附於構成半導體晶圓2之機能層21之表勒 2la的保護構件4剝離。 s施行上述晶圓支揮步驟後，施行晶圓斷開步驟，该 晶圓斷開步驟係對貼附於裝設在環狀框架6之切割膠帶7厶 半導體晶圓2賦與外力，以將半導體晶圓2沿著形成有雷射 溝211及變質層202之切割道23斷開者。此晶圓斷開少 驟在圖中所示之實施形態中，使用第16圖所示之膠帶擴張 ^置8來施行。第關所示之膠帶擴張裝置8具備保持上述 之框架保持機構8卜用以將襄設在保持於該框架 ”、冓81之環狀框架6之切割膠帶7擴萨的跋埋 :。框架保持___保持 =持構_外周，作為固定機構之複數個^ :保，…上面細叫置環_6之栽置面 於此载置面8Ha上載置環狀框架6。然後，載置 17 201133716 在載置面齡之環狀框架6以夾812固定於框架保持構件 81卜如此構成之框架保持機構仙膠帶擴張機構μ支樓成 可於上下方向進退。 膠帶擴張機構叫備配設於上述環狀框架保持構件 川之内側之擴張滚筒821。此擴張滾筒82ι具有内徑及外 徑，該内徑及外徑係小於環狀框架6之㈣，且大於貼附於 裝設在該環狀框架6之切割膠帶7之半導體晶圓2之外徑 者三又，擴張滾筒821於下端具有支撐凸緣822。圖中所示 之實施形態之膠帶擴張機構822具備可使上述環狀框架保 持構件811於上下方向進退之支㈣構83。此讀機構μ由 配設於上述支#凸緣822上之魏钱⑽丨構成，其活塞 桿832連結於上述環狀框純持構件811之下面。如此，由 、复數個氣缸8 31構成之支樓機構8 3使環狀框架保持構件叫 在載置面811a為與擴張滾筒821之上端約略相同之高度的 基準位置與較擴張滾筒821之上端低預定量之擴張位置間 於上下方向移動。因而’由複數個氣缸831構成之支撐機構 83具有作為使擴張滾筒821與框架保持構件811於上下方向 相對移動之擴張移動機構的功能。 就使用如以上構成之膠帶擴張裝置8施行之晶圓斷開 步驟參照第17圖來說明。即，如第17(a)圖所示，將裝設 了貼附有構成半導體晶圓2之半導體基板20之背面2〇b的切 割膠帶7之環狀框架6載置於構成框架保持機構81之框架保 持構件811之載置面811a上，以夾812固定於框架保持構件 811。此時’框架保持構件811置於第17(a)圖所示之基準位 201133716 置。接著，使作為構成膠帶擴張機構82之支樓機構83之複 數個氣缸831作動，而使環狀框架保持構件811下降至第 17(b)圖所示之擴張位置。因而’由於固定於框架保持構件 811之載置面811a上之環狀框架6也下降，故如第17(b)圖所 示，裝設在環狀框架6之切割膠帶7接觸擴張滾筒821之上端 緣，而被擴張。結果，由於拉伸力以放射狀作用於貼附在 切割膠帶7之半導體晶圓2，故半導體晶圓2沿著因於半導體 基板2形成變質層202而使強度降低之切割道23斷開，而分 割成諸個元件22。此時’由於構成半導體晶圓2之機能層21 • 藉在上述機能層分離步驟所形成之雷射加工溝21，沿著切 - 割道23分離，故半導體晶圓2沿著切割道23斷開之際，不致 ' 制離’而可解決因機能層21剝離，而使半導體元件22之品 , 質降低之問題。 C圖式簡單說明3 第1圖係顯示作為以本發明晶圓之加工方法分割之晶 圓之半導體晶圓的立體圖。 第2圖係第1圖所示之半導體晶圓之截面放大圖。 第3圖係用以實施本發明晶圓之加工方法之機能層分 離步驟之雷射加工裝置的主要部份立體圖。 第4(a)圖〜第4(c)圖係顯示本發明晶圓之加工方法之機 能層分離步驟的說明圖。 第5圖係業經施行第4圖所示之機能層分離步驟之半導 體晶圓的截面放大圖。 第6圖係業經施行第4圖所示之機能層分離步驟之半導 19 201133716 體日日圓的平面圖0 第7(a)圖、第7(b)圖係顯示本發明晶圓之加工方法之保 護構件裝設步驟的說明圖。 第8圖係用以施行本發明晶圓之加工方法之研磨步驟 之研磨裝置的主要部份立體圖。 第9圖係顯示本發明晶圓之加工方法之研磨步驟的說 明圖。 第10圖係用以實施本發明晶圓之加工方法之變質層形 成步驟之雷射加工裝置的主要部份立體圖。 第11(a)圖、第11(b)圖係顯示本發明晶圓之加工方法之 確認用變質層形成步驟的說明圖。 第12(a)圖、第12(b)圖係顯示本發明晶圓之加工方法之 錯位確認步驟之說明圖。 第13(a)圖、第13(b)圖係顯示本發明晶圓之加工方法之 變質層形成步驟的說明圖。 第14圖係業經施行第13圖所示之變質層形成步驟之光 元件晶圓的截面放大圖。 第15(a)圖、第15(b)圖係顯示本發明晶圓之加工方法之 晶圓支撐步驟的說明圖。 第16圖係用以施行本發明晶圓之加工方法之晶圓斷開 步驟之膠帶擴張裝置的立體圖。 第17(a)圖、第17(b)圖係顯示本發明晶圓之加工方法之 晶圓斷開步驟的說明圖。 ⑤ 20 201133716 【主要元件符號說明 2.. .半導體晶圓 3.. .雷射加工裝置 4.. .保護構件 5.. .研磨裝置 6.. .環狀框架 7.. .切割膠帶 8.. .膠帶擴張裝置 20.. .半導體基板 20a...表面 20b...背面 21.. .機能層 21a...表面 22.. .元件 23.. .切割道 31.. .吸盤台 32.. .雷射光線照射機構 33.. .拍攝機構 51.. .吸盤台 51a，524a，X，X卜 X2，Y··· 箭號 52.. .研磨機構 81.. .框架保持機構 82.. .膠帶擴張機構 83.. .支撐機構 201.. .確認用變質層 202.. .變質層 211.. .雷射加工溝 220.. .元件區域 240.. .外周剩餘區域 321.. .殼體 322.. .聚光器 521…心軸殼 522…旋轉心軸 523.. .座 524…研磨工具 525.. .基台 526.. .磨石 527.. .緊固螺栓 811.. .環狀框架保持構件 811a...載置面 812".夾 821…擴張滚筒 822…支撐凸緣 831·.·氣缸 832.. .活塞桿 P...聚光點 2180 kHz 0.2 W : φ ΐ # m : 200 mm / sec. Repetition frequency output concentrating spot diameter machining feed rate 5 16 201133716 As above, when all the dicing streets 23 are extended along the predetermined direction of the semiconductor wafer 2, the above deterioration is performed. After the layer forming step, the chuck table 31 is rotated by 90 degrees, and the above-described deteriorated layer forming step is performed along each of the dicing streets 23 extending perpendicularly to the predetermined direction. After the modifying layer forming step is performed as described above, the wafer supporting step is performed by attaching the back surface of the semiconductor substrate 20 constituting the semiconductor wafer 2 to the surface of the dicing tape provided on the annular frame. Also, the protective member attached to the surface of the wafer remains. In other words, as shown in Figs. 15(a) and C(b), the semiconductor substrate 2 constituting the semiconductor wafer 2 is attached to the surface of the dicing tape 7 which is provided on the outer peripheral portion so as to cover the inner opening portion of the annular frame 6. The back of the 〇 is 2〇b. Then, the protective member 4 attached to the surface layer 21a constituting the functional layer 21 of the semiconductor wafer 2 is peeled off. After performing the wafer fetching step, performing a wafer breaking step of applying an external force to the dicing tape 7 attached to the annular frame 6 to apply an external force to The semiconductor wafer 2 is broken along the scribe line 23 in which the laser trench 211 and the altered layer 202 are formed. This wafer disconnection is less performed in the embodiment shown in the figure, using the tape expansion shown in Fig. 16. The tape expanding device 8 shown in the first embodiment is provided with a frame holding mechanism 8 for holding the dicing tape 7 provided on the ring frame 6 held by the frame 冓 81 to be expanded. ___ Hold = Hold _ Peripheral, as a plurality of fixing mechanisms ^: Guarantee, ... on the above-mentioned mounting surface of the ring _6 on the mounting surface 8Ha placed on the annular frame 6. Then, placed 17 201133716 The annular frame 6 on which the face is placed is fixed to the frame holding member 81 by the clip 812. The frame holding mechanism of the frame holding mechanism is configured to advance and retreat in the up and down direction. The tape expansion mechanism is called the above. The annular frame holds the expansion roller 821 on the inner side of the member. The expansion roller 82i has an inner diameter and an outer diameter, and the inner diameter and the outer diameter are smaller than (4) of the annular frame 6, and are larger than attached to the ring. The outer diameter of the semiconductor wafer 2 of the dicing tape 7 of the frame 6 is three, and the expansion roller 821 has a support flange 822 at the lower end. The tape expansion mechanism 822 of the embodiment shown in the drawing is provided with the annular frame holding member. 811 branch in the up and down direction (4) 83. The reading mechanism μ is composed of Wei Qian (10) 配 disposed on the flange 822 of the branch, and the piston rod 832 is coupled to the underside of the annular frame holding member 811. Thus, the plurality of cylinders 8 31 The frame mechanism 8 3 is configured such that the annular frame holding member is in the up and down direction between the reference position at which the mounting surface 811a is approximately the same height as the upper end of the expansion roller 821 and the expansion position lower than the upper end of the expansion roller 821 by a predetermined amount. Therefore, the support mechanism 83 composed of the plurality of cylinders 831 has a function as an expansion moving mechanism that relatively moves the expansion roller 821 and the frame holding member 811 in the vertical direction. The crystal is applied using the tape expansion device 8 configured as above. The circular breaking step will be described with reference to Fig. 17. That is, as shown in Fig. 17(a), the ring of the dicing tape 7 to which the back surface 2〇b of the semiconductor substrate 20 constituting the semiconductor wafer 2 is attached is attached. The frame 6 is placed on the mounting surface 811a of the frame holding member 811 constituting the frame holding mechanism 81, and is fixed to the frame holding member 811 by the clip 812. At this time, the frame holding member 811 is placed as shown in Fig. 17(a). Base Then, the plurality of cylinders 831 as the branch mechanism 83 constituting the tape expansion mechanism 82 are actuated to lower the annular frame holding member 811 to the expanded position shown in Fig. 17(b). The annular frame 6 fixed to the mounting surface 811a of the frame holding member 811 is also lowered. Therefore, as shown in Fig. 17(b), the dicing tape 7 attached to the annular frame 6 contacts the upper edge of the expansion roller 821. As a result, since the tensile force acts radially on the semiconductor wafer 2 attached to the dicing tape 7, the semiconductor wafer 2 is cut along the dicing line which is reduced in strength due to the formation of the altered layer 202 by the semiconductor substrate 2. 23 is broken and divided into elements 22. At this time, 'the functional layer 21 constituting the semiconductor wafer 2 is separated by the laser processing groove 21 formed by the above-described functional layer separating step, and is separated along the cutting-cutting path 23, so that the semiconductor wafer 2 is broken along the cutting path 23. In the case of the opening, the problem of the quality of the semiconductor element 22 being lowered due to the peeling of the functional layer 21 can be solved without causing the "offset". BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view showing a semiconductor wafer which is a wafer which is divided by the processing method of the wafer of the present invention. Fig. 2 is an enlarged cross-sectional view showing the semiconductor wafer shown in Fig. 1. Fig. 3 is a perspective view showing the main part of a laser processing apparatus for carrying out the functional layer separation step of the wafer processing method of the present invention. 4(a) to 4(c) are explanatory views showing the functional layer separation step of the wafer processing method of the present invention. Fig. 5 is an enlarged cross-sectional view showing a semiconductor wafer subjected to the functional layer separation step shown in Fig. 4. Figure 6 is a semi-conductor that performs the functional layer separation step shown in Figure 4. 201133716 Plan view of the body circle 0. Figures 7(a) and 7(b) show the processing method of the wafer of the present invention. An explanatory diagram of the step of installing the protective member. Fig. 8 is a perspective view showing the main part of a polishing apparatus for carrying out the grinding step of the processing method of the wafer of the present invention. Fig. 9 is an explanatory view showing a grinding step of the processing method of the wafer of the present invention. Fig. 10 is a perspective view showing the main part of a laser processing apparatus for performing a metamorphic layer forming step of the wafer processing method of the present invention. Fig. 11(a) and Fig. 11(b) are explanatory views showing the steps of forming the modified metamorphic layer for the processing method of the wafer of the present invention. Fig. 12(a) and Fig. 12(b) are explanatory views showing the steps of confirming the misalignment of the wafer processing method of the present invention. Figs. 13(a) and 13(b) are explanatory views showing the steps of forming the altered layer in the method of processing the wafer of the present invention. Fig. 14 is an enlarged cross-sectional view showing the wafer of the optical element in which the metamorphic layer forming step shown in Fig. 13 is carried out. Fig. 15(a) and Fig. 15(b) are explanatory views showing the wafer supporting step of the wafer processing method of the present invention. Figure 16 is a perspective view of a tape expanding device for performing a wafer breaking step of the wafer processing method of the present invention. Figs. 17(a) and 17(b) are explanatory views showing a wafer disconnecting step of the wafer processing method of the present invention. 5 20 201133716 [Main component symbol description 2.. Semiconductor wafer 3... Laser processing device 4.. Protective member 5.. Grinding device 6... Annular frame 7.. Cutting tape 8. .. Tape Expansion Device 20:. Semiconductor Substrate 20a... Surface 20b... Back Side 21.. Functional Layer 21a... Surface 22.. Element 23.. Cutting Channel 31.. Suction Table 32 .. . Laser light irradiation mechanism 33.. Shooting mechanism 51.. Suction table 51a, 524a, X, X Bu X2, Y··· Arrow 52.. Grinding mechanism 81.. Frame holding mechanism 82 .. . Tape expansion mechanism 83.. Support mechanism 201.. Confirmation of metamorphic layer 202.. Metamorphic layer 211.. Laser processing groove 220.. Component area 240.. . Peripheral remaining area 321.. Housing 322.. concentrator 521... mandrel housing 522... rotating mandrel 523.. seat 524... grinding tool 525.. abutment 526.. grindstone 527.. fastening bolt 811. . Annular frame holding member 811a...mounting surface 812".clip 821...expansion roller 822...supporting flange 831·.·cylinder 832.. piston rod P...light collecting point 21