TWI614798B - Processing method of laminated wafer - Google Patents
Processing method of laminated wafer Download PDFInfo
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- TWI614798B TWI614798B TW103100507A TW103100507A TWI614798B TW I614798 B TWI614798 B TW I614798B TW 103100507 A TW103100507 A TW 103100507A TW 103100507 A TW103100507 A TW 103100507A TW I614798 B TWI614798 B TW I614798B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- Dicing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
提供一種積層晶圓之加工方法,其係用以在晶圓積層有 晶片的積層晶圓中,即使在將晶片側貼著在黏著薄片的狀態下,亦可將晶圓分割成各個晶片。 A method for processing laminated wafers is provided. In a laminated wafer, the wafer can be divided into individual wafers even when the wafer side is attached to the adhesive sheet.
提供一種積層晶圓之加工方法,其特徵為:至少在 實施分割步驟之前,具備有固定步驟,其係在與外周剩餘區域相對應的區域,在黏著薄片與晶圓的表面之間配設固定劑,且將晶圓的外周剩餘區域固定在黏著薄片。 Provided is a method for processing a laminated wafer, which is characterized in that: Before the dividing step is performed, a fixing step is provided, in which a fixing agent is arranged between the adhesive sheet and the surface of the wafer in a region corresponding to the remaining peripheral region, and the remaining peripheral region of the wafer is fixed to the adhesive sheet.
Description
本發明係關於在晶圓配設複數晶片之積層晶圓之加工方法。 The present invention relates to a method for processing a laminated wafer in which a plurality of wafers are arranged on a wafer.
以往,以將複數半導體元件集積在一個封裝體的手法之一而言,已知有三次元構裝。該三次元構裝係指將複數半導體元件晶片朝三次元方向進行積層而構裝的手法,在以三次元積層的技術之一有CoW(Chip on wafer)方式(參照例如專利文獻1)。 Conventionally, a three-dimensional structure has been known as one of the methods of integrating a plurality of semiconductor elements in one package. This three-dimensional stacking refers to a method of stacking a plurality of semiconductor element wafers in a three-dimensional direction. One of the three-dimensional stacking techniques is the CoW (Chip on wafer) method (see, for example, Patent Document 1).
在如上所示之三次元構裝中,形成在晶圓上積層有晶片的積層晶圓,藉由將該積層晶圓分割成各個晶片,形成在晶片上積層有晶片的狀態的積層晶片。 In the three-dimensional configuration shown above, a laminated wafer in which wafers are laminated on a wafer is formed, and the laminated wafer is divided into individual wafers to form a laminated wafer in a state where wafers are laminated on the wafer.
以將積層晶圓進行分割的手法而言,如專利文獻2之揭示所示,已知進行藉由具備有切削刀的切削裝置所為之切割的方法。 As a method of dividing a laminated wafer, as disclosed in Patent Document 2, a method of performing dicing by a cutting device including a cutting blade is known.
此外,以將積層晶圓進行分割的其他手法而言,如專利文獻3所揭示,已知在照射雷射光束而形成改質層 後,對晶圓賦予外力來進行分割的方法。以賦予外力來進行分割的手法而言,已知有例如專利文獻4所揭示之使用擴張裝置的分割方法。 In addition, in another method of dividing a laminated wafer, as disclosed in Patent Document 3, it is known to form a modified layer by irradiating a laser beam. Then, the wafer is divided by applying an external force to the wafer. As a method of dividing by applying an external force, for example, a dividing method using an expansion device disclosed in Patent Document 4 is known.
【專利文獻1】日本特開2012-209522號公報 [Patent Document 1] Japanese Patent Application Publication No. 2012-209522
【專利文獻2】日本特開2007-214201號公報 [Patent Document 2] Japanese Patent Laid-Open No. 2007-214201
【專利文獻3】日本專利第3408805號 [Patent Document 3] Japanese Patent No. 3408805
【專利文獻4】日本特開2010-034250號公報 [Patent Document 4] Japanese Patent Laid-Open No. 2010-034250
以積層晶圓的一個形態而言,已知有在晶圓狀的中介層(中介層晶圓)積層晶片的積層晶圓。關於如上所示之形態的積層晶圓,為了實施形成在中介層的凸塊的特性檢査,在分割成積層晶片之後,必須形成為以所被分割的中介層側成為上側的方式晶片側被支持在黏著薄片的狀態。 In one form of a laminated wafer, a laminated wafer in which a wafer-like interposer (intermediate wafer) is laminated is known. For the laminated wafer of the form shown above, in order to perform the characteristic inspection of the bumps formed in the interposer, after the division into the laminated wafer, it must be formed so that the wafer side is supported so that the divided interposer side becomes the upper side In the state of sticking flakes.
為實現該情形,考慮將積層晶圓的晶片側貼著在黏著薄片,在使晶圓狀的中介層露出於上側的狀態下將積層晶圓進行分割。 In order to achieve this, it is considered that the wafer side of the laminated wafer is adhered to the adhesive sheet, and the laminated wafer is divided while the wafer-like interposer is exposed on the upper side.
但是,在晶圓狀中介層的外周剩餘區域未配設晶片,無法透過晶片而使中介層貼著在黏著薄片。 However, the wafer-like interposer is not provided with a wafer in the remaining peripheral area, and the wafer cannot pass through the wafer to cause the interposer to adhere to the adhesive sheet.
因此,在使用專利文獻4所揭示的擴張裝置,將黏著薄片擴張,對晶圓狀的中介層賦予外力的分割手法 中,由於外周剩餘區域未藉由貼著而固定在黏著薄片,因此無法對配設有晶片的區域與外周剩餘區域的交界部分賦予外力,產生在該交界部分無法進行分割的問題。 Therefore, using the expansion device disclosed in Patent Document 4, a method of dividing an adhesive sheet and applying an external force to a wafer-shaped interposer is performed. However, since the remaining area of the outer periphery is not fixed to the adhesive sheet by adhesion, an external force cannot be applied to a boundary portion between the area where the wafer is disposed and the remaining area of the peripheral area, and a problem that the boundary portion cannot be divided is generated.
此係不僅針對使用晶圓狀的中介層的積層晶圓,針對在形成有元件的元件晶圓積層晶片的積層晶圓亦同。 This system is not only applicable to laminated wafers using wafer-like interposers, but also to laminated wafers on which element wafers are formed.
本發明係鑑於以上問題點所研創者,其目的在提供用以即使在晶圓積層有晶片的積層晶圓中將晶片側貼著在黏著薄片的狀態下,亦可將晶圓分割成各個晶片的積層晶圓之加工方法。 The present invention was developed by the inventor in view of the above problems, and an object thereof is to provide a method for dividing a wafer into individual wafers even if the wafer side is adhered to an adhesive sheet in a laminated wafer in which wafers are laminated. Processing method of laminated wafers.
根據請求項1所記載之發明,提供一種積層晶圓之加工方法,該積層晶圓係具有:晶圓、及分別積層在以相交叉的複數分割預定線所區劃的晶圓的表面的各區域的晶片,且具備:積層複數晶片之晶片區域、及圍繞晶片區域的外周剩餘區域,在晶片區域與外周剩餘區域之間形成有段差,該積層晶圓之加工方法之特徵為:具備有:黏著薄片貼著步驟,其係在積層晶圓的晶片側貼著黏著薄片;分割起點形成步驟,其係在實施黏著薄片貼著步驟之前或後,在晶圓形成沿著積層晶圓的分割預定線的分割起點;及分割步驟,其係在實施黏著薄片貼著步驟及分割起點形成步驟之後,將黏著薄片擴張而對積層晶圓賦予外力而由分割起點將晶圓分割,且至少在實施分割步驟之前,具備有固定步驟,其係在與外周剩餘區域相對應的區域,在黏 著薄片與晶圓的表面之間配設固定劑,且將晶圓的外周剩餘區域固定在黏著薄片。 According to the invention described in claim 1, a method for processing a laminated wafer is provided. The laminated wafer includes: a wafer; and each region of a surface of the wafer that is laminated on a predetermined area divided by a plurality of intersecting division lines. And a wafer region including a plurality of stacked wafers and a peripheral remaining region surrounding the wafer region. A step is formed between the wafer region and the remaining peripheral region. The processing method of the laminated wafer is characterized by: having: The sheet attaching step is to attach an adhesive sheet on the wafer side of the laminated wafer; the division starting point forming step is to form a wafer along a predetermined dividing line of the laminated wafer before or after the adhesive sheet attaching step is performed. The starting point of division; and the dividing step, which is to expand the adhesive sheet to give external force to the laminated wafer after the sticking sheet attaching step and the dividing start point forming step, and divide the wafer from the dividing start point, and at least perform the dividing step. Previously, there was a fixing step, which was attached to the area corresponding to the remaining area of the periphery, A fixing agent is arranged between the landing sheet and the surface of the wafer, and the remaining area of the outer periphery of the wafer is fixed to the adhesive sheet.
根據請求項2所記載之發明,提供一種如申請專利範圍第1項之積層晶圓之加工方法,其中,黏著薄片為感壓薄片,固定劑係由紫外線硬化樹脂所成,在固定步驟中,固定劑係在與外周剩餘區域相對應的區域,在黏著薄片與晶圓的表面之間被配設成虛線狀之後,透過黏著薄片而對固定劑照射紫外線,藉此將晶圓的外周剩餘區域固定在黏著薄片。 According to the invention described in claim 2, there is provided a method for processing a laminated wafer as described in claim 1, wherein the adhesive sheet is a pressure-sensitive sheet, and the fixing agent is made of an ultraviolet curing resin. In the fixing step, The fixing agent is located in a region corresponding to the remaining peripheral area. After the adhesive sheet and the surface of the wafer are arranged in a dotted line, the fixing agent is irradiated with ultraviolet rays through the adhesive sheet, thereby leaving the remaining peripheral area of the wafer. Fix on adhesive sheet.
若藉由本發明,提供一種在晶圓積層有晶片的積層晶圓中,即使在將晶片側貼著在黏著薄片的狀態下,亦可將晶圓分割成各個晶片之積層晶圓之加工方法。 According to the present invention, there is provided a method for processing a laminated wafer in which a wafer is laminated on a wafer, and the wafer can be divided into individual wafers even when the wafer side is adhered to an adhesive sheet.
具體而言,至少在將黏著薄片擴張之前,實施固定步驟,其係在與外周剩餘區域相對應的區域,在黏著薄片與晶圓的表面之間配設固定劑,且將晶圓的外周剩餘區域固定在黏著薄片。 Specifically, at least before expanding the adhesive sheet, a fixing step is performed, which is to arrange a fixing agent between the adhesive sheet and the surface of the wafer in a region corresponding to the remaining region of the outer periphery, and to leave the outer periphery of the wafer The area is fixed to the adhesive sheet.
藉此,晶圓的外周剩餘區域的部位亦可透過固定劑而固定在黏著薄片,在外周剩餘區域16亦傳達外力而以放射狀作用拉伸力,可在晶片區域與外周剩餘區域的交界部分所形成的分割起點,使晶圓破斷。 As a result, the remaining portion of the outer periphery of the wafer can also be fixed to the adhesive sheet through a fixing agent, and the external force is also transmitted to the remaining portion 16 of the wafer to act as a tensile force in a radial manner. The resulting singulation starting point breaks the wafer.
1‧‧‧積層晶圓 1‧‧‧Laminated wafer
1A‧‧‧晶片 1A‧‧‧Chip
11‧‧‧中介層 11‧‧‧ intermediary
11a‧‧‧表面 11a‧‧‧ surface
11b‧‧‧背面 11b‧‧‧Back
12‧‧‧晶片 12‧‧‧Chip
13‧‧‧分割預定線 13‧‧‧ divided scheduled line
14‧‧‧晶片區域 14‧‧‧Chip area
16‧‧‧外周剩餘區域 16‧‧‧ remaining area
17‧‧‧改質層 17‧‧‧ Modified layer
18‧‧‧黏著薄片 18‧‧‧ Adhesive sheet
18a‧‧‧黏著層 18a‧‧‧Adhesive layer
18b‧‧‧基材 18b‧‧‧ substrate
19‧‧‧交界部分 19‧‧‧ Junction
20‧‧‧環狀框架 20‧‧‧ ring frame
20a‧‧‧開口部 20a‧‧‧ opening
22‧‧‧晶圓單元 22‧‧‧ Wafer Unit
30‧‧‧雷射照射單元 30‧‧‧laser irradiation unit
32‧‧‧夾具 32‧‧‧ Fixture
34‧‧‧保持平台 34‧‧‧ keep the platform
40‧‧‧固定劑 40‧‧‧ Fixative
41‧‧‧固定劑 41‧‧‧ Fixative
42‧‧‧紫外線 42‧‧‧ UV
43‧‧‧空隙部 43‧‧‧Gap section
44‧‧‧紫外線照射裝置 44‧‧‧ ultraviolet irradiation device
50‧‧‧分割裝置 50‧‧‧ split device
51‧‧‧保持平台 51‧‧‧ keep the platform
55‧‧‧空氣汽缸 55‧‧‧Air Cylinder
56‧‧‧框架保持構件 56‧‧‧Frame holding member
56a‧‧‧載置面 56a‧‧‧mounting surface
S‧‧‧間隙 S‧‧‧ Clearance
圖1係針對積層晶圓的構成所顯示的斜視圖。 FIG. 1 is a perspective view showing the structure of a laminated wafer.
圖2係針對黏著薄片貼著步驟所顯示的斜視圖。 FIG. 2 is a perspective view showing a step of attaching the adhesive sheet.
圖3係針對黏著薄片貼著步驟所顯示的側面圖。 Fig. 3 is a side view showing the step of applying the adhesive sheet.
圖4係針對被貼著在黏著薄片的積層晶圓所顯示的側面剖面圖。 FIG. 4 is a side cross-sectional view showing a laminated wafer attached to an adhesive sheet.
圖5係針對分割起點形成步驟所顯示的側面圖。 FIG. 5 is a side view showing the step of forming a division starting point.
圖6係針對藉由固定劑所為之外周剩餘區域的固定所顯示的側面剖面圖。 FIG. 6 is a side cross-sectional view showing the fixation of the remaining peripheral area by the fixing agent.
圖7(A)係針對凝膠狀的固定劑的配置所說明的斜視圖。(B)係針對硬化的固定劑的配置所說明的斜視圖。 FIG. 7 (A) is a perspective view explaining the arrangement of a gel-like fixing agent. (B) is a perspective view explaining the arrangement of the hardened fixative.
圖8係針對分割步驟中分割前的狀態所顯示的側面剖面圖。 FIG. 8 is a side cross-sectional view showing a state before division in the division step.
圖9係針對分割步驟中分割後的狀態所顯示的側面剖面圖。 FIG. 9 is a side cross-sectional view showing a state after the division in the division step.
圖10係針對使用紫外線硬化樹脂作為固定劑之例所顯示的側面剖面圖。 FIG. 10 is a side cross-sectional view showing an example using an ultraviolet curable resin as a fixing agent.
以下參照圖示,詳加說明本發明之實施形態。圖1係針對作為本發明之加工對象之一例的積層晶圓1所示之斜視圖。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is a perspective view showing a laminated wafer 1 as an example of a processing object of the present invention.
積層晶圓1係在作為薄板圓盤狀的晶圓所構成的中介層11的表面11a,以將複數晶片12、12縱橫整列的方式配設在預定的位置所構成。 The laminated wafer 1 is formed on the surface 11 a of the interposer 11 composed of a thin plate-shaped wafer, and is arranged at a predetermined position so that a plurality of wafers 12 and 12 are aligned vertically and horizontally.
預定在相鄰晶片12、12之間的區域中,規定分割預定線13、13,沿著該分割預定線13、13來進行分割。 In a region between adjacent wafers 12 and 12, predetermined division lines 13 and 13 are defined, and division is performed along the division division lines 13 and 13.
在中介層11的表面11a中,配設晶片12的區域係設為晶片區域14,晶片區域14的外周的部位構成為外周剩餘區域16。 In the surface 11 a of the interposer 11, a region where the wafer 12 is arranged is a wafer region 14, and a portion on the outer periphery of the wafer region 14 is configured as a remaining region 16.
晶片區域14由於構成為僅以晶片12的厚度而比外周剩餘區域16為更高,因此在晶片區域14與外周剩餘區域16的交界部分係形成段差15。藉由該段差15的存在,若將積層晶圓1的晶片區域14貼著在黏著薄片18(圖2)時,外周剩餘區域16會由黏著薄片18浮起。 Since the wafer region 14 is configured to be higher than the remaining peripheral region 16 only by the thickness of the wafer 12, a step 15 is formed at the boundary portion between the wafer region 14 and the remaining peripheral region 16. With the existence of this step 15, if the wafer region 14 of the laminated wafer 1 is adhered to the adhesive sheet 18 (FIG. 2), the remaining peripheral region 16 will float from the adhesive sheet 18.
因此,若欲將黏著薄片18擴張來進行分割時,對於由黏著薄片18浮起的外周剩餘區域16並未賦予外力,而無法進行在晶片區域14與外周剩餘區域16之間的分割。 Therefore, if the adhesive sheet 18 is to be expanded for division, no external force is applied to the peripheral remaining region 16 floating from the adhesive sheet 18, and the division between the wafer region 14 and the peripheral remaining region 16 cannot be performed.
因此,在本實施例中,藉由以下方法來進行積層晶圓1的分割。首先,如圖2及圖3所示,實施在積層晶圓1的晶片12側貼著黏著薄片18的黏著薄片貼著步驟。 Therefore, in this embodiment, the division of the laminated wafer 1 is performed by the following method. First, as shown in FIGS. 2 and 3, an adhesive sheet attaching step of attaching an adhesive sheet 18 to the wafer 12 side of the laminated wafer 1 is performed.
如圖2及圖3所示,在積層晶圓1中,將中介層11的背面11b設為上側,相對於黏著薄片18的黏著層18a,使晶片12(晶片區域14)相對向,且將晶片12貼著在黏著層18a。 As shown in FIG. 2 and FIG. 3, in the multilayer wafer 1, the back surface 11 b of the interposer 11 is set to the upper side, and the wafer 12 (wafer region 14) is opposed to the adhesive layer 18 a of the adhesive sheet 18. The wafer 12 is attached to the adhesive layer 18a.
在此,黏著薄片18的基材18b(圖3)係可由例如PO(聚烯烴)、PVC(聚氯乙烯)、PE(聚苯二甲酸乙二酯)等所構成。此外,黏著層18a(糊層)係可由橡膠系或壓克力系樹脂所構成。 Here, the base material 18b (FIG. 3) of the adhesive sheet 18 can be comprised with PO (polyolefin), PVC (polyvinyl chloride), PE (polyethylene terephthalate), etc., for example. The adhesive layer 18a (paste layer) may be made of a rubber-based or acrylic resin.
此外,將具有包圍積層晶圓1的大小的開口部20a的環狀框架20貼著在黏著薄片18。 In addition, a ring-shaped frame 20 having an opening 20 a having a size surrounding the laminated wafer 1 is attached to the adhesive sheet 18.
接著,如圖4所示,以將黏著薄片18收納在環狀 框架20的外周內的方式適當切斷,藉此構成透過黏著薄片18而使積層晶圓1固定在環狀框架20的晶圓單元22。 Next, as shown in FIG. 4, the adhesive sheet 18 is stored in a ring shape. The frame 20 is appropriately cut into the outer periphery of the frame 20 to form a wafer unit 22 that fixes the laminated wafer 1 to the ring-shaped frame 20 through the adhesive sheet 18.
接著,如圖5所示,在實施黏著薄片貼著步驟之前或後,實施在中介層11形成沿著積層晶圓1的分割預定線13的分割起點的分割起點形成步驟。 Next, as shown in FIG. 5, before or after the adhesive sheet sticking step is performed, a dividing start point forming step of forming a dividing start point along the planned dividing line 13 of the laminated wafer 1 on the interposer 11 is performed.
在本實施形態中,如圖5所示,在實施黏著薄片貼著步驟後,藉由雷射照射單元30,在中介層11形成改質層,藉此形成分割起點。 In this embodiment, as shown in FIG. 5, after performing the adhesive sheet sticking step, a modified layer is formed on the interposer 11 by the laser irradiation unit 30 to form a division starting point.
在圖5之例中,係形成為以夾具32保持環狀框架20,以保持平台34透過黏著薄片18來吸引保持積層晶圓1的構成。 In the example of FIG. 5, the ring frame 20 is held by the jig 32, and the holding platform 34 sucks and holds the laminated wafer 1 through the adhesive sheet 18.
接著,將保持平台34一面朝箭號X1方向加工進給,一由雷射照射單元30對中介層11照射雷射光束,藉此如圖6所示,沿著分割預定線13而在中介層11內形成改質層17。 Next, the holding platform 34 is processed and fed while facing the direction of the arrow X1, and a laser beam is irradiated to the interposer 11 by the laser irradiation unit 30. Thereby, as shown in FIG. A modified layer 17 is formed in the layer 11.
其中,如本實施形態所示,除了進行藉由雷射光束照射所為之分割起點(改質層17)的形成以外,亦可藉由利用雷射剝蝕加工所為之雷射加工溝的形成、或者利用具備有旋轉的切削刀的切削裝置所為之切削溝的形成,來構成分割起點。 Among them, as shown in this embodiment, in addition to forming the starting point of the division (modified layer 17) by laser beam irradiation, formation of a laser processing groove by laser ablation processing, or The division starting point is formed by the formation of a cutting groove for a cutting device provided with a rotating cutter.
此外,亦可在實施黏著薄片貼著步驟之前,預先實施分割起點形成步驟來形成改質層17,之後,如圖3所示,使形成有改質層的積層晶圓1貼著在黏著薄片18。 In addition, before the adhesive sheet sticking step is performed, a dividing starting point forming step may be performed in advance to form the modified layer 17, and then, as shown in FIG. 3, the laminated wafer 1 on which the modified sheet is formed is attached to the adhesive sheet. 18.
接著,除了以上說明的各步驟以外,實施在與外 周剩餘區域16相對應的區域,在黏著薄片18與中介層11的表面11a之間配設固定劑40(圖4),將中介層11的外周剩餘區域16固定在黏著薄片18的固定步驟。 Next, in addition to the steps described above, it is implemented externally. A fixing agent 40 (FIG. 4) is disposed between the adhesive sheet 18 and the surface 11 a of the interposer 11 in a region corresponding to the peripheral remaining region 16, and the peripheral remaining region 16 of the interposer 11 is fixed to the fixing step of the adhesive sheet 18.
該固定步驟若在實施後述分割步驟之前實施即可,預定在上述各步驟之中的任何步驟之前、或之後實施。 This fixing step may be performed before the division step described later is performed, and is scheduled to be performed before or after any of the above steps.
圖6係顯示在中介層11的表面11a配設固定劑40,透過固定劑40,對黏著薄片18貼著中介層11的外周剩餘區域16的樣子。 FIG. 6 shows a state in which a fixing agent 40 is disposed on the surface 11 a of the interposer 11, and the remaining sheet 16 of the interposer 11 is adhered to the adhesive sheet 18 through the fixer 40.
該固定劑40係可使用例如凝膠狀接著劑,考慮以描繪(鑲邊)中介層11的周邊的方式將固定劑40注出,藉此在中介層11的外周剩餘區域16與黏著薄片18之間的間隙S供給固定劑40。 This fixing agent 40 is, for example, a gel-like adhesive, and it is conceivable to inject the fixing agent 40 in such a manner as to draw (border) the periphery of the interposer 11 so that the remaining area 16 and the adhesive sheet 18 of the outer periphery of the interposer 11 are injected. The gap S is supplied with the fixing agent 40.
此外,該固定劑40的配設係例如圖1所示,在使中介層11的表面11a露出於上的狀態下進行,亦即可在黏著薄片貼著步驟之前實施。藉此,與黏著薄片貼著步驟同時地實施固定步驟。 In addition, as shown in FIG. 1, the placement system of the fixing agent 40 is performed in a state in which the surface 11 a of the interposer 11 is exposed thereon, that is, it can be performed before the adhesive sheet sticking step. Thereby, the fixing step is performed simultaneously with the adhesive sheet sticking step.
或者,可如圖4所示,在使中介層11的表面11a相對黏著薄片18進行貼著的狀態下進行,亦即,在黏著薄片貼著步驟之後實施。或者,亦可如圖5所示,在形成藉由雷射光束照射等所致之分割起點之後進行,亦即,在分割起點形成步驟之後實施。 Alternatively, as shown in FIG. 4, the surface 11 a of the interposer 11 may be adhered to the adhesive sheet 18, that is, after the adhesive sheet attaching step. Alternatively, as shown in FIG. 5, it may be performed after forming a starting point for division by laser beam irradiation or the like, that is, performing after the step for forming the starting point for division.
接著,固定劑40的配設係除了藉由用以塗佈固定劑40的塗佈裝置來自動賦予以外,亦可為由作業人員所為之手工作業所為者。此外,如圖7(A)所示,除了連續供給 固定劑40,來描繪(鑲邊)中介層11的周邊以外,亦可如圖7(B)所示,斷續供給固定劑41,以虛線狀配置固定劑41。 Next, the placement of the fixing agent 40 may be performed automatically by a coating device for applying the fixing agent 40, or it may be performed manually by an operator. In addition, as shown in FIG. 7 (A), The fixing agent 40 may be used to draw (border) the periphery of the interposer 11. Alternatively, as shown in FIG. 7 (B), the fixing agent 41 may be intermittently supplied and the fixing agent 41 may be arranged in a dotted line.
固定劑40係不需要停留在中介層11與黏著薄片18之間的間隙S(圖6),亦可繞入至中介層11的外周緣或背面11b,藉此以固定劑40覆蓋背面11b。 The fixing agent 40 does not need to stay in the gap S (FIG. 6) between the interposer 11 and the adhesive sheet 18, and can also wrap around the outer periphery or the back surface 11 b of the interposer 11, thereby covering the back surface 11 b with the fixing agent 40.
接著,如圖8及圖9所示,實施將黏著薄片18擴張而對積層晶圓1賦予外力而由分割起點(改質層17)將中介層11分割的分割步驟。 Next, as shown in FIG. 8 and FIG. 9, a dividing step of expanding the adhesive sheet 18 to apply an external force to the laminated wafer 1 and dividing the interposer 11 from the dividing starting point (modification layer 17) is performed.
在本實施形態中,係使用具有:保持被貼著在黏著薄片18的積層晶圓1的保持平台51、及保持環狀框架20的框架保持構件56的分割裝置50。 In this embodiment, a dividing device 50 having a holding platform 51 that holds the laminated wafer 1 adhered to the adhesive sheet 18 and a frame holding member 56 that holds the ring frame 20 is used.
框架保持構件56係藉由空氣汽缸55的驅動,由圖8所示之保持位置被下降至圖9所示之擴張位置,保持平台51與框架保持構件56以鉛直方向作相對移動。 The frame holding member 56 is driven by the air cylinder 55 to be lowered from the holding position shown in FIG. 8 to the expanded position shown in FIG. 9, and the holding platform 51 and the frame holding member 56 are relatively moved in the vertical direction.
此時,被保持在框架保持構件56的載置面56a上的環狀框架20下降,被裝設在環狀框架20的黏著薄片18係抵接於保持平台51的上端緣而主要以半徑方向擴張。 At this time, the ring-shaped frame 20 held on the mounting surface 56 a of the frame holding member 56 is lowered, and the adhesive sheet 18 mounted on the ring-shaped frame 20 abuts on the upper end edge of the holding platform 51, mainly in the radial direction. expansion.
結果,對被貼著在黏著薄片18的中介層11係傳達外力而以放射狀作用拉伸力,若對中介層11以放射狀作用拉伸力時,沿著分割預定線13(參照圖1)所形成的改質層17由於強度降低,因此該改質層17成為分割基點,中介層11係沿著改質層17被破斷而被分割成各個晶片1A、1A。 As a result, an external force is transmitted to the interposer 11 adhered to the adhesive sheet 18 and a tensile force is applied in a radial manner. When the intermediary layer 11 is applied in a radial manner, the tensile force is applied along the planned division line 13 (see FIG. 1). Since the modified layer 17 formed by) has a reduced strength, the modified layer 17 serves as a dividing point, and the interposer 11 is broken along the modified layer 17 and is divided into individual wafers 1A and 1A.
接著,在進行該分割步驟時,中介層11的外周剩餘區域16的部位亦透過固定劑40而被固定在黏著薄片18, 因此對外周剩餘區域16亦傳達外力而以放射狀作用拉伸力,在晶片區域14與外周剩餘區域16的交界部分19所形成的改質層17,中介層11即被破斷。 Next, when performing this division step, the remaining area 16 of the outer periphery of the interposer 11 is also fixed to the adhesive sheet 18 through the fixing agent 40, Therefore, the external remaining area 16 also transmits external forces and acts as a tensile force in a radial manner. The intermediate layer 11 is broken when the modified layer 17 is formed at the boundary portion 19 of the wafer area 14 and the remaining area 16.
可如以上實施本發明。 The present invention can be implemented as above.
亦即,形成為一種積層晶圓1之加工方法,該積層晶圓1係具有:作為晶圓的中介層11、及分別積層在以相交叉的複數分割預定線13所區劃的中介層11的表面的各區域的晶片12,且具備:積層複數晶片12的晶片區域14、及圍繞晶片區域14的外周剩餘區域16,在晶片區域14與外周剩餘區域16之間形成有段差15,該積層晶圓1之加工方法具備有:在積層晶圓1的晶片12側貼著黏著薄片18的黏著薄片貼著步驟;在實施黏著薄片貼著步驟之前或後,在中介層11形成沿著積層晶圓1的分割預定線13的分割起點的分割起點形成步驟;在實施黏著薄片貼著步驟及分割起點形成步驟之後,將黏著薄片18擴張而對積層晶圓1賦予外力而由分割起點將中介層11分割的分割步驟,且至少在實施分割步驟之前,具備有固定步驟,其係在與外周剩餘區域16相對應的區域,在黏著薄片18與中介層11的表面11a之間配設固定劑40,且將中介層11的外周剩餘區域16固定在黏著薄片18。 That is, it is formed as a processing method of a laminated wafer 1 having an interposer 11 as a wafer and layers of the interposer 11 divided by intersecting plural divided predetermined lines 13 respectively. The wafer 12 in each region of the surface includes a wafer region 14 in which a plurality of wafers 12 are laminated, and a peripheral remaining region 16 surrounding the wafer region 14. A step 15 is formed between the wafer region 14 and the peripheral remaining region 16. The processing method of circle 1 includes: an adhesive sheet attaching step of attaching an adhesive sheet 18 to the wafer 12 side of the laminated wafer 1; and before or after performing the adhesive sheet attaching step, forming an interlayer 11 along the laminated wafer The division start point formation step of the division start point of the division line 1 of 1; after performing the adhesive sheet attachment step and the division start point formation step, the adhesive sheet 18 is expanded to apply external force to the laminated wafer 1 and the intervening layer 11 is divided from the division start point. A division step of division, and at least before the division step is performed, a fixing step is provided, which is located in an area corresponding to the remaining peripheral area 16 and on the surface of the adhesive sheet 18 and the interposer 11. A fixing agent 40 is arranged between the surfaces 11 a, and the remaining area 16 of the outer periphery of the interposer 11 is fixed to the adhesive sheet 18.
藉由該加工方法,作為晶圓的中介層11的外周剩餘區域16的部位亦透過固定劑40而被固定在黏著薄片18,因此對外周剩餘區域16亦傳達外力而以放射狀作用拉伸力,在形成於晶片區域14與外周剩餘區域16的交界部分19的改質層17,可使中介層11破斷。 By this processing method, the remaining area 16 of the outer periphery of the interposer 11 of the wafer is also fixed to the adhesive sheet 18 through the fixing agent 40. Therefore, the remaining area 16 of the outer periphery also transmits the external force and acts as a tensile force in a radial manner. The modified layer 17 formed at the boundary portion 19 of the wafer region 14 and the remaining peripheral region 16 can break the interposer 11.
其中,在以上實施形態中,係使用利用中介層11作為晶圓的積層晶圓1之例來進行說明,但是關於在形成有元件的元件晶圓積層晶片的積層晶圓,亦可適用本發明。 In the above embodiment, the description is made by using the laminated wafer 1 using the interposer 11 as a wafer. However, the present invention can also be applied to a laminated wafer in which an element wafer is laminated with an element. .
此外,如圖7(B)所示之實施形態,亦可黏著薄片 18係藉由壓着來進行貼著的感壓薄片,固定劑41係由紫外線硬化樹脂所成,在固定步驟中,固定劑41係在與外周剩餘區域16相對應的區域,在黏著薄片18與中介層11的表面11a之間配設成虛線狀後,如圖10所示,透過黏著薄片18而對固定劑41照射紫外線42,藉此將中介層11的外周剩餘區域16固定在黏著薄片18。 In addition, in the embodiment shown in FIG. 7 (B), the sheet may be adhered. 18 is a pressure-sensitive sheet that is adhered by pressing, and the fixing agent 41 is made of an ultraviolet curing resin. In the fixing step, the fixing agent 41 is in a region corresponding to the remaining peripheral region 16 and the adhesive sheet 18 is After being arranged in a dotted line with the surface 11a of the interposer 11, as shown in FIG. 10, the fixing agent 41 is irradiated with ultraviolet rays 42 through the adhesive sheet 18, thereby fixing the remaining area 16 of the outer periphery of the interposer 11 to the adhesive sheet. 18.
該實施形態係針對使用紫外線硬化樹脂來作為硬化的類型的固定劑41時為尤其適合的實施形態。假設未以虛線狀配設,亦即未隔著間隔而斷續地配置時,會因固定劑硬化而阻礙分割步驟時之黏著薄片18的擴張之故。 This embodiment is a particularly suitable embodiment when a UV-curable resin is used as the curing type fixing agent 41. If it is not arranged in a dotted line, that is, it is not intermittently arranged at intervals, the expansion of the adhesive sheet 18 during the division step is hindered by the curing of the fixing agent.
在圖10所示之實施形態中,將來自紫外線照射裝置44的紫外線42,由黏著薄片18的背面側對固定劑41進行照射,藉此使固定劑41硬化。 In the embodiment shown in FIG. 10, the fixing agent 41 is hardened by irradiating the fixing agent 41 with the ultraviolet rays 42 from the ultraviolet irradiation device 44 from the back side of the adhesive sheet 18.
該固定劑41係在中介層11的外周剩餘區域16被配置成虛線狀,因此在所散佈的固定劑41之間形成有空隙部43(圖7(B)),因此在該空隙部43容許黏著薄片18的擴張,可對中介層11的全部區域傳達外力而作用放射狀的拉伸力。 The fixing agent 41 is arranged in a dotted line in the remaining peripheral region 16 of the interposer 11. Therefore, a gap 43 is formed between the scattered fixing agents 41 (FIG. 7 (B)). The expansion of the adhesive sheet 18 can transmit an external force to the entire area of the interposer 11 and apply a radial tensile force.
1‧‧‧積層晶圓 1‧‧‧Laminated wafer
11‧‧‧中介層 11‧‧‧ intermediary
11a‧‧‧表面 11a‧‧‧ surface
11b‧‧‧背面 11b‧‧‧Back
12‧‧‧晶片 12‧‧‧Chip
13‧‧‧分割預定線 13‧‧‧ divided scheduled line
16‧‧‧外周剩餘區域 16‧‧‧ remaining area
17‧‧‧改質層 17‧‧‧ Modified layer
18‧‧‧黏著薄片 18‧‧‧ Adhesive sheet
18a‧‧‧黏著層 18a‧‧‧Adhesive layer
18b‧‧‧基材 18b‧‧‧ substrate
40‧‧‧固定劑 40‧‧‧ Fixative
S‧‧‧間隙 S‧‧‧ Clearance
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CN104009002A (en) | 2014-08-27 |
TW201438084A (en) | 2014-10-01 |
JP6021687B2 (en) | 2016-11-09 |
CN104009002B (en) | 2018-07-31 |
JP2014165325A (en) | 2014-09-08 |
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