TW200943402A - Method for forming adhesive dies singulated from a wafer - Google Patents
Method for forming adhesive dies singulated from a waferInfo
- Publication number
- TW200943402A TW200943402A TW97112546A TW97112546A TW200943402A TW 200943402 A TW200943402 A TW 200943402A TW 97112546 A TW97112546 A TW 97112546A TW 97112546 A TW97112546 A TW 97112546A TW 200943402 A TW200943402 A TW 200943402A
- Authority
- TW
- Taiwan
- Prior art keywords
- adhesive layer
- wafer
- cut
- dies
- gap
- Prior art date
Links
Landscapes
- Dicing (AREA)
- Adhesive Tapes (AREA)
Abstract
Disclosed is a method for forming adhesive dies singulated from a wafer. A cut gap is formed between dies of the wafer. An adhesive layer formed on an extendable film is transfer-printed to the wafer. Aligned with the cut gap, a guiding groove for tearing is formed in the adhesive layer but not penetrate through. The extendable film is extended until the adhesive layer is torn into pieces along the guiding groove. Dies attached with the adhesive layer are picked up from the extendable film. Accordingly, the adhesive layer is free from cut burrs protruding from die-attaching plane at its edges, it can solve conventional problem of die-attached skew and remained gap caused by the cut burrs. Additionally, the adhesive layer is diced under low temperature to avoid improper curing at its edges.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW97112546A TWI377614B (en) | 2008-04-07 | 2008-04-07 | Method for forming adhesive dies singulated from a wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW97112546A TWI377614B (en) | 2008-04-07 | 2008-04-07 | Method for forming adhesive dies singulated from a wafer |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200943402A true TW200943402A (en) | 2009-10-16 |
TWI377614B TWI377614B (en) | 2012-11-21 |
Family
ID=44869007
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW97112546A TWI377614B (en) | 2008-04-07 | 2008-04-07 | Method for forming adhesive dies singulated from a wafer |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI377614B (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102896702A (en) * | 2011-07-27 | 2013-01-30 | 隆达电子股份有限公司 | Crystal grain separation process and device thereof |
TWI614798B (en) * | 2013-02-25 | 2018-02-11 | Disco Corp | Processing method of laminated wafer |
TWI806982B (en) * | 2018-03-09 | 2023-07-01 | 日商迪思科股份有限公司 | Processing method of package substrate |
TWI810429B (en) * | 2019-01-30 | 2023-08-01 | 日商迪思科股份有限公司 | How to register the origin position of the cutting device |
-
2008
- 2008-04-07 TW TW97112546A patent/TWI377614B/en not_active IP Right Cessation
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102896702A (en) * | 2011-07-27 | 2013-01-30 | 隆达电子股份有限公司 | Crystal grain separation process and device thereof |
TWI614798B (en) * | 2013-02-25 | 2018-02-11 | Disco Corp | Processing method of laminated wafer |
TWI806982B (en) * | 2018-03-09 | 2023-07-01 | 日商迪思科股份有限公司 | Processing method of package substrate |
TWI810429B (en) * | 2019-01-30 | 2023-08-01 | 日商迪思科股份有限公司 | How to register the origin position of the cutting device |
Also Published As
Publication number | Publication date |
---|---|
TWI377614B (en) | 2012-11-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2010074906A3 (en) | Group iii-v devices with delta-doped layer under channel region | |
EP4047647A3 (en) | Semiconductor device | |
PH12017500284B1 (en) | Protective coating-forming sheet and method for manufacturing semiconductor chip provided with protective coating | |
TW200741847A (en) | Method for separating protective tape, and apparatus using the same | |
MX2019003609A (en) | Methods and devices for skin closure. | |
GB2548726A (en) | Low temperature adhesive resins for wafer bonding | |
WO2012021227A3 (en) | Heterojunction solar cell | |
TWI268572B (en) | Film peeling method and film peeling device | |
EP2393134A3 (en) | Encapsulating sheet for optical semiconductor | |
EP2575177A3 (en) | Manufacturing method of compound semiconductor device | |
WO2014070534A3 (en) | Integrated bondline spacers | |
WO2012082329A3 (en) | Tunnel field effect transistor | |
MY181191A (en) | Metal-foil-assisted fabrication of thin-silicon solar cell | |
WO2012102523A3 (en) | Thermoelectric device and thermoelectric module having the same, and method of manufacturing the same | |
PH12015502200A1 (en) | Production method for laminate film, laminate film, and production method for semiconductor device employing same | |
WO2012109050A3 (en) | Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same | |
GB201103125D0 (en) | Composite structure | |
TW200943402A (en) | Method for forming adhesive dies singulated from a wafer | |
EP2530723A3 (en) | Photovoltaic device comprising silicon microparticles | |
MY162202A (en) | Methods of treating a semiconductor layer | |
MY176995A (en) | Dicing sheet | |
SG10201907601SA (en) | Film-like adhesive composite sheet and method for manufacturing semiconductor device | |
IN2012DN05153A (en) | ||
WO2012067444A3 (en) | Conductive film with an oxide film and method for producing same | |
WO2012001600A3 (en) | Method of forming compound semiconductor nanowire |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |