201133921 六、發明說明： I：發明戶斤屬之技術領域3 發明領域 本發明係有關於一種發光二極體、雷射二極體等光學 元件之製造方法。 C先前技術]1 發明背景 在光學元件製程中，在近圓板狀之藍寶基板或碳化矽 基板表面層疊由氮化鉀系化合物半導體構成之光學元件 層，並於以形成格子狀之複數個切割道劃分之複數個區域 形成發光二極體、雷射二極體等光學元件，而構成光學元 件晶圓。然後，藉將光學元件晶圓沿著切割道切斷，而分 割形成有光學元件之區域，而製造了諸個光學元件。 上述光學元件晶圓之沿著切割道之切斷通常以稱為切 割器之切削裝置來進行。此切削裝置具備保持被加工物之 吸盤台、用以切削保持在該吸盤台之被加工物之切削機 構、使吸盤台及切削機構相對地移動之切削進給機構。切 削機構具有旋轉轉軸、裝設於該轉軸之切削刀片及將旋轉 轉軸旋轉驅動之驅動裝備。切削刀片由圓盤狀基台及裝設 於該基台之側面外周部之環狀切刀構成，切刀係以電鑄將 粒徑3/zm左右之鑽石研磨粒固定於基台，而形成厚度 20 // m左右。 然而’構成光學元件晶圓之藍寶石基板、碳化石夕基板 等由於莫氏硬度高，故未必易進行上述切削刀片之切斷。 201133921 再者，由於切削刀片具有20# m左右之厚度，故劃分元件之 切割道寬度需為50//m左右。因此，切割道所佔之面積比例 增高，而有生產性差之問題。 為解決上述問題，沿著切割道分割光學元件之方法已 提出藉沿著切割道照射對晶圓具吸收性之脈衝雷射光線， 而形成作為斷開之起點之雷射加工溝，藉沿著形成有作為 此斷開之起點之雷射加工溝之切割道，賦與外力而割斷（參 照專利文獻1 )。 然而，當沿著形成於構成光學元件晶圓表面之藍寶石 基板表面之切割道照射雷射光線，形成雷射加工溝時，發 光二極體等光學元件外周被消蝕，亮度降低，而有光學元 件之品質降低之問題。 為解決此種問題，於下述專利文獻2揭示有一種藍寶石 基板之加工方法，該藍寶石基板之加工方法係從形成有作 為光學元件層之發光層（晶膜層）之藍寶石基板背面側將對 藍寶石基板具穿透性之波長之雷射光其聚光點置於内部， 而沿著切割道照射，而於藍寶石基板内部沿著切割道形成 變質層，藉此，將藍寶石基板沿著形成有變質層之切割道 分割者。 先行技術文獻 專利文獻 專利文獻1 日本專利公開公報平10-305420號 f 專利文獻2 日本專利公開公報2008-6492號 I：發明内容3 4 201133921 發明概要 發明欲解決之課題 在揭示於上述專利文獻2之晶圓之分割方法中，首先， 為使晶圓形成預定厚度（例如100//m以下），而將晶圓背面 研磨後，將對晶圓具穿透性之波長之脈衝雷射光線從晶圓 之背面側將其聚光點對準内部，沿著切割道照射，而於晶 圓内部沿著切割道形成作為斷開之起點之變質層，但一旦 變質層到達作為光學元件層之發光層（晶膜層）時，光學元件 層便受到損傷，光學元件之亮度降低。為解決此種問題， 須在不到達光學元件層之範圍形成變質層。然而，在晶圓 之厚度在100# m以下之薄狀態，在不到達光學元件層之範 圍形成變質層非常困難。 本發明即是鑑於上述情形而發明者，其主要技術課題 在於提供可在不對光學元件層造成損傷下，獲得具有預定 厚度之光學元件的光學元件之製造方法。 用以欲解決課題之手段 為解決上述主要技術課題，根據本發明，提供一種光 學元件之製造方法，其係將在基板表面層疊有光學元件 層，且於以形成格子狀之複數個切割道劃分之複數個區域 形成有光學元件之光學元件晶圓沿著切割道分割成諸個光 學元件者，該光學元件之製造方法特徵在於具有變質層形 成步驟、光學元件晶圓形成步驟、保護構件貼附步驟、背 面研磨步驟及晶圓斷開步驟，該變質層形成步驟係將對基 板具穿透性之波長之雷射光線從基板之背面側將其聚光點 201133921 置於基板内部，以對對應於切割道之區域照射，而在基板 内部，與基板表面隔著預定間隔，於背面側形成變質層者； 該光學元件晶圓形成步驟係藉於已執行該變質層形成步驟 之基板表面層疊光學元件層，且於以形成格子狀之複數個 切割道劃分之複數個區域形成光學元件，而構成光學元件 晶圓者；該保護構件貼附步驟係將保護構件貼附於光學元 件晶圓表面者；該背面研磨步驟係研磨光學元件晶圓之基 板背面，而形成預定厚度者；該晶圓斷開步驟係對已執行 背面研磨步驟之光學元件晶圓賦與外力，而將光學元件晶 圓沿著形成有變質層之切割道斷開，而分割成諸個光學元 件晶圓者。 上述變質層形成步驟之與基板表面之預定間隔設定成 5〜60 # m。 上述保護構件貼附步驟係將光學元件晶圓之表面貼附 於裝設在環狀框架，作為保護構件之保護膠帶，而在將光 學元件晶圓表面貼附於該保護膠帶之狀態下，執行上述背 面研磨步驟及晶圓斷開步驟。 於執行上述晶圓斷開步驟後，執行將光學元件晶圓之 基板背面研磨，而去除變質層之變質層去除步驟。 上述保護構件貼附步驟係將光學元件晶圓之表面貼附 於裝設在環狀框架，作為保護構件之保護膠帶，而在將光 學元件晶圓表面貼附於該保護膠帶之狀態下，執行上述背 面研磨步驟、晶圓斷開步驟及變質層去除步驟。 發明效果 201133921 在本發明，由於變質層形成步驟係於基板表面形成光 學元件層，形成光學元件前執行，故光學元件層不致因雷 射光線受到損傷。又，由於變質層形成步驟係在研磨構成 光學元件晶圓之基板背面，形成預定厚度前之厚狀態下執 行，故可易將雷射光線之聚光點置於所期位置。 又，在本發明中，由於於執行變質層形成步驟後，執 行背面研磨步驟，將光學元件晶圓之厚度形成預定厚度， 而將光學元件晶圓沿著形成有變質層之切割道斷開，故可 將變質層之厚度抑制在最小限度，而提高生產性。 圖式簡單說明 第1圖係顯示光學元件晶圓之立體圖。 第2圖係構成光學元件晶圓之藍寶石基板之立體圖。 第3圖係用以執行本發明光學元件晶圓之加工方法之 變質層形成步驟之雷射加工裝置的主要部份立體圖。 第4(a)圖〜第4(c)圖係本發明光學元件晶圓之加工方法 之變質層形成步驟的說明圖。 第5(a)圖、第5(b)圖係藉執行本發明光學元件晶圓之加 工方法之光學元件晶圓形成步驟所製造之光學元件晶圓的 立體圖及將主要部份放大顯示之截面圖。 第6圖係顯示執行本發明光學元件晶圓之加工方法之 保護構件貼附步驟，將晶圓表面貼附於裝設在環狀框架之 保護膠帶之狀態的立體圖。 第7圖係本發明光學元件晶圓之加工方法之背面研磨 步驟的說明圖。 201133921 第8圖係將已執行本發明光學元件晶圓之加工方法之 背面研磨步驟之光學元件晶圓的主要部份放大顯示之截面 圖。 第9圖係用以執行本發明光學元件晶圓之加工方法之 晶圓斷開步驟之晶圓斷開裝置的立體圖。 第10(a)圖、第10(b)圖係本發明光學元件晶圓之加工方 法之晶圓斷開步驟的說明圖。 第11圖係本發明光學元件晶圓之加工方法之變質層去 除步驟的說明圖。 第12圖係將已執行本發明光學元件晶圓之加工方法之 變質層去除步驟之光學元件晶圓主要部份放大顯示的截面 圖。 第13(a)圖〜第13(d)圖係本發明之光學元件晶圓之加工 方法之晶圓移轉步驟的說明圖。 第14圖係用以執行本發明光學元件晶圓之加工方法之 拾取步驟之拾取裝置的立體圖。 第15(a)圖、第15(b)圖係本發明光學元件晶圓之加工方 法之拾取步驟的說明圖。 I：實施方式3 用以實施發明之形態 以下，就本發明光學元件之製造方法之較佳實施形 態，參照附加圖式，詳細說明。 於第1圖顯示以本發明光學元件之製造方法之製造過 程製造之光學元件晶圓的立體圖。第1圖所示之光學元件晶 201133921 圓2係於厚度430//m之基板2〇表面以5〜i〇#m之厚度層疊 由氮化物半導體構成之作為光學元件層之發光層（晶膜 層）21。又，於發光層（晶膜層）21以形成格子狀之複數個切 割道22劃分之複數個區域形成有發光二極體、雷射二極體 4光學元件23。此外，於構成光學元件晶圓2之基板20之外 周形成有顯示結晶方位之缺口 2〇 1。以下，就製造此光學晶 圓元件2之方法作說明。 於第2圖顯示構成光學元件晶圓2之基板20之立體圖。 第2圖所示之基板20由形成厚度43 0/zm之圓板狀藍寶石基 板構成，於其外周形成有顯示結晶方位之缺口 201。 於第2圖所示之藍寶石基板20表面形成複數個光學元 件23，製造光學元件晶圓2之際，首先，執行變質層形成步 驟，該變質層形成步驟係將對基板具穿透性之波長之雷射 光線從基板之背面側將其聚光點置於基板内部，以對對應 於切割道之區域照射，而在基板内部，與基板表面隔著預 定間隔，於背面側形成變質層者。此變質層形成步驟使用 第3圖所示之雷射加工裝置3來執行。第3圖所示之雷射加工 裝置3具備保持被加工物之吸盤台31、用以對保持在該吸盤 台31之被加工物照射雷射光線之雷射光線照射機構32、拍 攝保持在吸盤台31上之被加工物之拍攝機構33。吸盤台31 構造成吸引保持被加工物，以圖中未示之加工進給機構， 於第3圖中以箭號X所示之加工進給方向移動’並且，以圖 中未示之分度進給機構，於第3圖中以箭號γ所示之分度進 給方向移動。 201133921 上述雷射光線照射機構32具有實質上配置成水平之圓 筒狀殼體321。於殼體321内配設有具有圖中未示之脈衝雷 射光線振盪器或重複頻率設定機構之脈衝雷射光線振盈機 構。於上述殼體321之前端部裝設有用以將從脈衝雷射光線 振盪機構振盪之脈衝雷射光線聚光之聚光器322。此外，雷 射光線照射機構32具有用以調整以聚光器322聚光之脈衝 雷射光線之聚光點位置的聚光點位置調整機構（圖中未示）。 裝設於構成上述雷射光線照射機構3 2之殼體3 21前端 部之拍攝機構3 3在圖中所示之實施形態以以可視光線拍攝 之拍攝器件(CCD)等構成’將所拍攝之圖像信號送至圖中未 示之控制機構。此外，於圖巾未示之控制機構之記憶體儲 存有於構成上述第丨圖所示之光學元件23之基板2〇表面形 成格子狀之複數個切割道22的座標值(設計值）。 要使用上述雷射加工裝置3,執行上述變質層形成步驟 係如第3圖所不’將藍寶石基板2〇之表面術側載置於吸盤 台31上° ’藉使圖中未示之吸引機構作動，將藍寶石 基板20保持於吸盤台3丨上（晶圓料㈣）。因而，铺在吸 盤台31之藍寶石基板20之背面2〇b形成為上側。 20之吸盤台31以圖中未示之加工進 之正下方。當吸盤台31置於拍攝機 保持步驟後’吸引保持有藍寶石基板 ι進給機構置於拍攝機構33 攝機構33之正下方時，以拍 置於預定座標值之校準作業 藍寶石2〇外周之缺口 2〇1，將 攝機構33及圖中未不之控制機構執行藍寶石基板如是否已 業°即’拍攝機構33拍攝形成於 將其圖像信號送至圖中未示之控 10 201133921 制機構。然後，圖中未示之控制機構依據從拍攝機構幻所 送之圖像信號，判定缺口 201是否置於預定之座標值，當缺 口 201未置於預定座標值時，便旋動吸盤台31，調整成將缺 口 201置於預定座標值（校準步驟）。 當如以上進行，執行校準步驟後，如第4(a)圖所示，將 吸盤台31移動至雷射光線照射機構32之聚光器322所在之 雷射光線照射區域，將對應於預定切割道2 2之一端（在第4 (a) 圖中為左端）之座標值置於雷射光線照射機構3 2之聚光器 322之正下方。接著’將從聚光器322照射之脈衝雷射光線 之聚光點P對準距離藍寶石基板20之表面2〇a(下面）55# m 之上側之位置。為將從此聚光器322照射之脈衝雷射光線之 聚光點P置於藍寶石基板20之預定位置，乃使用記載於日本 專利公開公報2009-63446號，保持在吸盤台之被加工物高 度位置檢測裝置，檢測保持在吸盤台3 1之藍寶石基板20之 上面之高度位置，以所檢測出之藍寶石基板2〇之上面之高 度位置為基準，使圖中未示之聚光點位置調整機構作動， 藉此，將脈衝雷射光線之聚光點P置於預定位置。然後，— 面從聚光器3 22照射對藍寶石基板2 0具穿透性之波長之脈 衝雷射光線，一面使吸盤台31於第4(a)圖中以箭號XI所示 之方向以預定加工進給速度移動。接著，如第4(b)圖所示， 當到達在雷射光線照射機構32之聚光器322之照射位置，财 應於切割道22之另一端（在第4(b)圖中為右端）之座標值 後’停止雷射光線之照射，同時，停止吸盤台31之移動。 結果’如第4(b)圖及第4(c)圖所示’於藍寶石基板2〇形成沿 201133921 著在内部與切割道22對應之區域連續之變質層210(變質層 形成步驟）。此變質層210係形成於背面20b(上面）側，而非 藍寶石基板20之表面20a(下面）。沿著對應於形成於光學元 件晶圓2之所有切割道2 2之區域執行上述變質層形成步驟。 上述變質層形成步驟之加工條件設定如下。 光源 ：Yb雷射：摻镱光纖雷射 波長 ：1045nm 重複頻率 ：100kHz201133921 VI. Description of the Invention: I: Technical Field of Inventions 3 Field of the Invention The present invention relates to a method of manufacturing an optical element such as a light-emitting diode or a laser diode. C. Prior Art] In the optical element manufacturing process, an optical element layer composed of a potassium nitride-based compound semiconductor is laminated on the surface of a nearly disc-shaped sapphire substrate or a tantalum carbide substrate, and a plurality of layers are formed in a lattice shape. The plurality of regions divided by the scribe lines form optical elements such as a light-emitting diode and a laser diode to form an optical element wafer. Then, optical elements are fabricated by cutting the optical element wafer along the dicing street and dividing the area where the optical element is formed. The cutting of the optical element wafer along the dicing street is usually performed by a cutting device called a cutter. This cutting device includes a chuck table for holding a workpiece, a cutting mechanism for cutting and holding a workpiece on the chuck table, and a cutting feed mechanism for relatively moving the chuck table and the cutting mechanism. The cutting mechanism has a rotating shaft, a cutting insert mounted on the rotating shaft, and a driving device for rotationally driving the rotating shaft. The cutting insert is composed of a disc-shaped base and an annular cutter mounted on the outer peripheral portion of the side surface of the base. The cutter is formed by electroforming a diamond abrasive grain having a particle diameter of about 3/zm to the base. The thickness is about 20 // m. However, since the sapphire substrate, the carbonized carbide substrate, and the like constituting the optical element wafer have high Mohs hardness, the cutting of the cutting insert is not always easy. 201133921 Furthermore, since the cutting insert has a thickness of about 20# m, the width of the cutting path of the dividing element needs to be about 50/m. Therefore, the proportion of the area occupied by the diced road is increased, and there is a problem of poor productivity. In order to solve the above problem, a method of dividing an optical element along a dicing street has been proposed to irradiate a laser beam absorbing light to a wafer along a scribe line to form a laser processing groove as a starting point of disconnection. The dicing path of the laser processing groove which is the starting point of the disconnection is formed, and is cut by an external force (see Patent Document 1). However, when the laser beam is irradiated along the dicing street formed on the surface of the sapphire substrate constituting the surface of the optical element wafer to form a laser processing groove, the outer periphery of the optical element such as the light-emitting diode is ablated, the brightness is lowered, and the optical is optical. The problem of reduced quality of components. In order to solve such a problem, Patent Document 2 discloses a method of processing a sapphire substrate which is processed from the back side of a sapphire substrate on which a light-emitting layer (crystalline film layer) as an optical element layer is formed. The sapphire substrate has a penetrating wavelength of laser light, the condensing point is placed inside, and is irradiated along the dicing street, and a metamorphic layer is formed along the scribe line inside the sapphire substrate, thereby forming the sapphire substrate along the morphing The cleavage of the layer is divided. CITATION LIST Patent Literature Patent Literature 1 Japanese Patent Laid-Open Publication No. Hei 10-305420 No. Patent Document 2 Japanese Patent Publication No. 2008-6492 No. In the method of dividing the wafer, first, in order to form the wafer to a predetermined thickness (for example, 100//m or less), after the wafer is back-polished, the pulsed laser light having a wavelength penetrating the wafer is The back side of the wafer aligns its condensing point with the inside, and illuminates along the dicing street, and forms a metamorphic layer as a starting point of disconnection along the dicing street inside the wafer, but once the metamorphic layer reaches the illuminating layer as the optical element layer In the case of a layer (crystalline film layer), the optical element layer is damaged, and the brightness of the optical element is lowered. In order to solve such a problem, an altered layer must be formed without reaching the optical element layer. However, in a thin state in which the thickness of the wafer is 100 or less, it is extremely difficult to form a deteriorated layer without reaching the optical element layer. The present invention has been made in view of the above circumstances, and a main technical object thereof is to provide a method of manufacturing an optical element which can obtain an optical element having a predetermined thickness without causing damage to the optical element layer. Means for Solving the Problems In order to solve the above-mentioned main technical problems, according to the present invention, a method for manufacturing an optical element is disclosed in which an optical element layer is laminated on a surface of a substrate, and is divided into a plurality of dicing streets formed in a lattice shape. The optical element wafer in which the plurality of regions are formed with the optical element is divided into the optical elements along the dicing street, and the manufacturing method of the optical element is characterized by having the altered layer forming step, the optical element wafer forming step, and the protective member attaching a step of: a back grinding step and a wafer breaking step, wherein the modifying layer forming step is to place a laser beam having a wavelength that is transparent to the substrate from the back side of the substrate to the light collecting point 201133921 inside the substrate to correspond to Irradiating in a region of the dicing street, and forming a metamorphic layer on the back side of the substrate at a predetermined interval from the substrate surface; the optical element wafer forming step is performed by stacking the substrate surface optical having performed the altered layer forming step a component layer, and forming an optical component in a plurality of regions divided by a plurality of dicing streets formed in a lattice shape And forming the optical component wafer; the protective component attaching step is to attach the protective component to the surface of the optical component wafer; the back grinding step is to polish the back surface of the substrate of the optical component wafer to form a predetermined thickness; The circular breaking step applies an external force to the optical element wafer on which the back grinding step has been performed, and breaks the optical element wafer along the scribe line formed with the altered layer into the optical element wafers. The predetermined interval between the alteration layer formation step and the substrate surface is set to 5 to 60 #m. The protective member attaching step is performed by attaching a surface of the optical element wafer to a protective tape attached to the annular frame as a protective member, and attaching the surface of the optical element wafer to the protective tape, and performing The back grinding step and the wafer breaking step described above. After performing the above-described wafer disconnecting step, a step of removing the deteriorated layer from which the modified layer is removed by performing back grinding of the substrate of the optical element wafer is performed. The protective member attaching step is performed by attaching a surface of the optical element wafer to a protective tape attached to the annular frame as a protective member, and attaching the surface of the optical element wafer to the protective tape, and performing The back grinding step, the wafer breaking step, and the deterioration layer removing step. EFFECT OF THE INVENTION 201133921 In the present invention, since the altered layer forming step is performed on the surface of the substrate to form the optical element layer and is performed before the optical element is formed, the optical element layer is not damaged by the laser light. Further, since the step of forming the altered layer is performed by polishing the back surface of the substrate constituting the optical element wafer and forming it thick before the predetermined thickness is formed, the light collecting point of the laser light can be easily placed at the desired position. Further, in the present invention, since the back grinding step is performed after the step of forming the altered layer, the thickness of the optical element wafer is formed to a predetermined thickness, and the optical element wafer is broken along the scribe line in which the altered layer is formed, Therefore, the thickness of the metamorphic layer can be minimized, and productivity can be improved. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view showing an optical element wafer. Fig. 2 is a perspective view of a sapphire substrate constituting an optical element wafer. Fig. 3 is a perspective view showing a main part of a laser processing apparatus for performing a modified layer forming step of the method for processing an optical element wafer of the present invention. 4(a) to 4(c) are explanatory views showing a step of forming an altered layer of the method for processing an optical element wafer of the present invention. 5(a) and 5(b) are perspective views of an optical element wafer manufactured by performing an optical element wafer forming step of the method for processing an optical element wafer of the present invention, and a cross section showing an enlarged main portion Figure. Fig. 6 is a perspective view showing a state in which the protective member attaching step of the method for processing an optical element wafer of the present invention is carried out, and the surface of the wafer is attached to a protective tape attached to the annular frame. Fig. 7 is an explanatory view showing a back grinding step of the method for processing an optical element wafer of the present invention. 201133921 Fig. 8 is a cross-sectional view showing an enlarged main portion of an optical element wafer on which a back grinding step of a method for processing an optical element wafer of the present invention has been carried out. Figure 9 is a perspective view of a wafer breaking device for performing a wafer breaking step of the method for processing an optical element wafer of the present invention. Figs. 10(a) and 10(b) are explanatory views showing a wafer disconnecting step of the method for processing an optical element wafer of the present invention. Fig. 11 is an explanatory view showing a step of removing the deteriorated layer of the method for processing an optical element wafer of the present invention. Fig. 12 is a cross-sectional view showing an enlarged main portion of an optical element wafer in which the modified layer removing step of the optical element wafer processing method of the present invention has been carried out. Figs. 13(a) to 13(d) are explanatory views of the wafer transfer step of the method for processing an optical element wafer of the present invention. Fig. 14 is a perspective view of a pickup device for carrying out the pickup step of the method for processing an optical element wafer of the present invention. Fig. 15(a) and Fig. 15(b) are explanatory views showing the pickup steps of the processing method of the optical element wafer of the present invention. I. Embodiment 3 Mode for Carrying Out the Invention Hereinafter, a preferred embodiment of a method for producing an optical element according to the present invention will be described in detail with reference to the accompanying drawings. Fig. 1 is a perspective view showing an optical element wafer manufactured by the manufacturing process of the optical element manufacturing method of the present invention. The optical element crystal 201133921 shown in Fig. 1 is formed by laminating a light-emitting layer composed of a nitride semiconductor as an optical element layer on the surface of the substrate 2〇 having a thickness of 430/m. Layer) 21. Further, in the light-emitting layer (crystal film layer) 21, a plurality of regions divided by a plurality of cutting streets 22 formed in a lattice shape are formed with a light-emitting diode and a laser diode 4 optical element 23. Further, a notch 2 〇 1 showing a crystal orientation is formed on the outer periphery of the substrate 20 constituting the optical element wafer 2. Hereinafter, a method of manufacturing the optical crystal element 2 will be described. A perspective view of the substrate 20 constituting the optical element wafer 2 is shown in FIG. The substrate 20 shown in Fig. 2 is formed of a disk-shaped sapphire substrate having a thickness of 43 0/zm, and a notch 201 showing a crystal orientation is formed on the outer periphery thereof. A plurality of optical elements 23 are formed on the surface of the sapphire substrate 20 shown in FIG. 2, and when the optical element wafer 2 is manufactured, first, a metamorphic layer forming step is performed, which is a wavelength that is transparent to the substrate. The laser beam is placed inside the substrate from the back side of the substrate to illuminate the region corresponding to the dicing street, and a metamorphic layer is formed on the back side of the substrate at a predetermined interval from the substrate surface. This altered layer forming step is performed using the laser processing apparatus 3 shown in Fig. 3. The laser processing apparatus 3 shown in Fig. 3 includes a chuck table 31 for holding a workpiece, and a laser beam irradiation mechanism 32 for irradiating a laser beam to the workpiece held by the chuck table 31, and the image is held by the chuck. The photographing mechanism 33 of the workpiece on the stage 31. The suction cup table 31 is configured to attract and hold the workpiece, and is moved by a machining feed mechanism (not shown) in the machining feed direction indicated by an arrow X in FIG. 3, and is not shown in the drawing. The feed mechanism is moved in the indexing feed direction indicated by the arrow γ in Fig. 3. 201133921 The above-described laser beam irradiation mechanism 32 has a cylindrical casing 321 which is substantially horizontally arranged. A pulsed laser beam oscillating mechanism having a pulsed laser ray oscillator or a repetition frequency setting mechanism (not shown) is disposed in the casing 321. A concentrator 322 for concentrating the pulsed laser light oscillating from the pulsed laser oscillating mechanism is disposed at a front end of the casing 321 . Further, the laser beam illumination mechanism 32 has a spot position adjustment mechanism (not shown) for adjusting the position of the spot of the pulsed laser beam condensed by the concentrator 322. The imaging mechanism 33 mounted on the front end portion of the casing 3 21 constituting the above-described laser beam irradiation unit 3 2 is configured to be photographed by a photographing device (CCD) or the like photographed by visible light. The image signal is sent to a control mechanism not shown in the figure. Further, the memory of the control unit not shown in the figure stores the coordinate value (design value) of the plurality of dicing streets 22 which are formed in a lattice shape on the surface of the substrate 2 which constitutes the optical element 23 shown in the above-mentioned second drawing. To use the above-described laser processing apparatus 3, the above-described metamorphic layer forming step is performed as shown in FIG. 3, and the surface side of the sapphire substrate 2 is placed on the chuck table 31. Actuation, the sapphire substrate 20 is held on the chuck table 3 (wafer (4)). Therefore, the back surface 2〇b of the sapphire substrate 20 laid on the chuck table 31 is formed on the upper side. The chuck table 31 of 20 is directly under the processing which is not shown. When the suction cup table 31 is placed in the camera holding step, 'the suction sapphire substrate ι feeding mechanism is placed directly under the photographing mechanism 33, the sapphire 2 〇 〇 〇 〇 置于 置于 校准 校准2〇1, the camera mechanism 33 and the control mechanism in the figure execute the sapphire substrate, if it has been photographed, that is, the 'photographing mechanism 33 is formed to send its image signal to the control unit 10,339,391, which is not shown. Then, the control unit (not shown) determines whether the notch 201 is placed at a predetermined coordinate value according to the image signal sent from the shooting mechanism, and when the notch 201 is not placed at the predetermined coordinate value, the suction table 31 is rotated. Adjusted to place the notch 201 at a predetermined coordinate value (calibration step). When the calibration step is performed as described above, as shown in FIG. 4(a), moving the chuck table 31 to the laser beam irradiation region where the concentrator 322 of the laser beam irradiation mechanism 32 is located will correspond to the predetermined cut. The coordinate value of one end of the track 2 2 (left end in the 4th (a) diagram) is placed directly below the concentrator 322 of the laser beam illumination mechanism 32. Next, the spot P of the pulsed laser beam irradiated from the concentrator 322 is aligned to a position above the surface 2〇a (lower) 55# m of the sapphire substrate 20. The condensing point P of the pulsed laser beam irradiated from the concentrator 322 is placed at a predetermined position of the sapphire substrate 20, and is held at the height position of the workpiece at the chuck table by using Japanese Patent Laid-Open Publication No. 2009-63446. The detecting device detects the height position of the sapphire substrate 20 held on the chuck table 31, and operates the spot position adjusting mechanism (not shown) based on the height position of the detected sapphire substrate 2〇. Thereby, the spot P of the pulsed laser light is placed at a predetermined position. Then, the surface is irradiated with the pulsed laser light of the wavelength of the sapphire substrate 20 from the concentrator 3 22 while the chuck table 31 is in the direction indicated by the arrow XI in the fourth (a) The predetermined machining feed speed is moved. Next, as shown in Fig. 4(b), when reaching the irradiation position of the concentrator 322 of the laser beam irradiation mechanism 32, the other end of the dicing street 22 (the right end in the 4th (b)th figure) After the coordinate value, 'the illumination of the laser beam is stopped, and at the same time, the movement of the chuck table 31 is stopped. As a result, as shown in Figs. 4(b) and 4(c), the sapphire substrate 2 〇 forms an altered layer 210 which is continuous in the region corresponding to the scribe line 22 in the interior of 201133921 (the metamorphic layer forming step). This altered layer 210 is formed on the back surface 20b (upper side) side instead of the surface 20a (lower surface) of the sapphire substrate 20. The above-described deteriorated layer forming step is performed along a region corresponding to all of the dicing streets 2 2 formed on the optical element wafer 2. The processing conditions of the above-described altered layer forming step are set as follows. Light source: Yb laser: erbium-doped fiber laser wavelength: 1045nm repetition rate: 100kHz
平均輸出 ：0.3W 聚光點徑 ：φΐ〜1.5//m 加工進給速度 ：400mm/秒 當以上述加工條件執行上述變質層形成步驟時，以脈 衝雷射光線之聚光點P為中心，形成上下50//m左右之變質 層210。因而，藉執行上述變質層形成步驟，50//m左右之 變質層自距離藍寶石基板20表面20a(下面）30//m之位置形 成於背面20b側。此外，形成於藍寶石基板20内部之變質層 210宜自與藍寶石基板20之表面20a距離5〜60 μ m之位置形 成於背面20b側。如此，由於在變質層形成步驟，於藍寶石 基板20表面形成發光層（晶膜層）21，形成光學元件23前執 行，故發光層（晶圓層）21不致因雷射光線受到損傷。又，變 質層形成步驟係在將構成光學元件晶圓2之藍寶石基板20 如後述研磨背面，形成預定厚度前之厚狀態（例如430//m) 下執行，故可易將脈衝雷射光線之聚光點P置於所期之位 置。 12 201133921 ,妾著執行光學元件晶圓形成步驟，該光學元件晶圓 形成步驟係於已執行上述變質層形成步驟之藍寶石基板2〇 2面咖層4光學元件層，於以形格子狀之複數個切割道 之複數個區域形成光學元件，而構成光學元件晶圓 3 。此光學元件晶圓形成步驟可以揭示於日本專利公報第 物2〇1號之方法來執行。藉如此進行，執行光學元件晶圓 =步驟’如第5⑷圖及第5(b)圖所示，可製造光學元件晶 曹'亥光子元件晶圓係於已執行上述變質層形成步驟之藍 声基板20表面2〇a層疊作為光學元件層之發光層（晶膜 2 )2卜亚独形成格子狀之複數個蝴扣劃分之複數個 ^ ^成有光學元件23者。於如此構成之光學元件晶圓2之 "基板2〇内°卩，沿著形成袼子狀之複數個切割道22形 成有變質層210。 _田執仃上述光學元件形成步驟後，為保護形成於光學 几件曰日圓表面之光學元件，而執行將保護構件貼附於光學 γ件明圓之表面之保護構件貼附步驟。即，如第6圖所示， ^光學71件晶圓2之表面域附於震設在以金屬材形成之 衣狀框架4，作為保護構件之保護膠帶4〇表面。此外，上述 呆邊膠f 40在圖巾所不之實施形態，係於由厚度1⑼^⑺之 κ氣乙烯(PVC)構成之片基材表面塗佈丙烯酸樹脂系糊厚 度5 左右。此糊使用具有黏著力因照射紫外線而降低之 性質者。 田藉執行上述保護構件貼附步驟，將光學元件晶圓2之 表面2a貼附於裝設在環狀框架4之保護膠帶牝後，執行研磨 13 201133921 光學元件晶圓之背面，形成預定厚度之背面研磨步驟。此 背面研磨步驟使用第7圖所示之研磨裝置5來執行。第7圖所 示之研磨裝置5具備保持被加工物之吸盤台51、具有用以研 磨保持在該吸盤台51之被加工物之磨石521的研磨工具 52。此外，吸盤台51之保持被加工物之中央部形成較高， 外周部形成較中央部低。要使用如此構成之研磨裝置5，執 行上述背面研磨步驟，如第7圖所示，將已執行上述變質層 形成步驟之光學元件晶圓2之保護膠帶40側載置於研磨裝 置50之吸盤台51上，同時，將環狀框架4載置於吸盤台51之 外周部’藉使圖中未示之吸引機構作動，將光學元件晶圓2 及環狀框架4吸引保持於吸盤台51上。因而，保持在吸盤台 51上之光學元件晶圓2之藍寶石基板20之背面20b形成為上 側。如此進行’當將光學元件晶圓2吸引保持於吸盤台51上 後，一面以500rpm旋轉吸盤台51，一面以lOOOrpm使研磨工 具52旋轉，接觸構成光學元件晶圓2之藍寶石基板20之背面 20b，同時，研磨進給預定量。結果，研磨構成光學元件晶 圓2之藍寶石基板20之背面2〇b，構成光學元件晶圓2之藍寶 石基板20形成預疋厚度(例如go v m)。結果’如第8圖所不’ 使變質層210露出至構成光學元件晶圆2之藍寶石基板20之 背面20b。如此，由於執行上述變質層形成步驟後，執行背 面研磨步驟，將晶圓厚度形成預定厚度，故可將變質層厚 度抑制在最小限度，生產性提高。 當執行上述背面研磨步驟後，執行對光學元件晶圓賦 與外力，將晶圓沿著形成有變質層之切割道斷開，分割成 14 201133921 諸個光學元件之晶圓斷開步驟。此晶圓斷開步驟6使用第9 圖所示之晶圓斷開裝置6來執行。第9圖所示之晶圓斷開裝 置6具備基台61、在該基台61上配設成可於箭號γ所示之方 向移動之移動台62。基台61形成矩形，在其兩側部上面， 於箭號Y所示之方向’有2條導軌611、612相互平行地配設。 移動台62可移動地配設於此2條導軌611、612上。移動台62 藉移動機構63於箭號Y所示之方向移動。於移動台62上配設 有保持上述環狀框架4之框架保持機構64。框架保持機構64 由圓筒狀本體部641、設於該本體641上端之環狀框架保持 構件642、配設於該框架保持構件642之外周，作為固定機 構之複數個夾643所構成。如此構成之框架保持機構64以夾 643固定載置於框架保持構件642上之環狀框架4。又，第9 圖所不之晶圓斷開裝置6具備使上述框架保持機構64旋動 之旋動機構65。此旋動機構65由配設於上述移動台62之脈 衝馬達651、裝設於該脈衝馬達651之旋轉軸之滑輪652、捲 繞於該滑輪652及圓筒狀本體641之無端皮帶653構成。如此 構成之旋動機構65藉驅動脈衝馬達651，可藉由滑輪652及 無端皮帶653，使框架保持機構64旋動。 第9圖所示之晶圓斷開裝置ό具備在藉由保護膠帶40支 撐於保持在上述環狀框架保持構件642之環狀框架4之光學 兀件晶圓2，使拉伸力作用於與切割道22垂直相交之方向之 張力賦與機構66。張力賦與機構66配置於環狀框架保持構 件64内。此張力賦與機構66具有具於與箭號γ方向垂直相交 之方向長之長方形保持面的第1吸引保持構件6 61及第2吸 15 201133921 引保持構件662。於第】吸引保持構件661形成有複數個” 孔晰a’於第2吸引保持構件_形成有複數個吸引孔 略。複數個吸引孔661a及6必與圖中未示之吸引機構連 通。又’第则保持構件661及第2吸引保持構件啦藉圖 中未示之移動機構分別於箭號Y方向移動。 •第9圖所示之晶圓斷開裝置6具備用以檢測藉由保護膠 帶40支樓於保持在上述環狀框架⑽構件⑷之環狀框架* 之光學元件晶圓2之_道22的檢顯撕。檢測機構㈣ 裝於配設在基台6以字形支雜67卜此檢測機構^以光 學系統及拍攝器件(CCD)等構成，並配置於上述張力賦與機 構66之上方位置。如此構成之檢測機構哪攝藉由保護膠 帶40支樓於保持在上述環狀框架保持構件⑷之環狀框" 之光學元件晶圓2的切贿Μ後，將此轉換成能號後送 至圖中未示之控制機構。 就使用上述晶圓斷開裝置6來執行之晶圓之斷開，參照 第10圖作說明。 〜' -將藉由保護膠帶40支樓已執行變質層形成步驟之光學 凡件晶圓2之環狀框架4如第1〇⑷圖所示，載置於框架保持 構件642上’以爽643固定於框架保持構件⑷。接著，使移 動機構63作動’使移動台62於箭號γ顯示之方向（參照第9 圖）移動’而如第1〇⑷圖所示，在光學元件晶圓2形成於預 疋方向之1條㈣道22(在圖中所示之實施形態為最左端之 切割道）置於構成張力賦與機構66之第卜及引保持構件⑹ 之保持面與第2吸引保持構件662之保持面間。此時，以檢 201133921 則機構67拍攝切割道22，進行第丨吸引保持構件66ι之保持 面與第2吸引保持構件662之保持面的對位。如此進行當i 條切割迢22置於第卜及引保持構件661之保持面與第：吸引 保持構件662之保持面間後，使圖中未示之吸引機構作動， 而使負壓作用於吸引孔661aB62b，藉此，藉由保護膠帶 4〇將光學元件晶圓吸引保持於第卜及？丨保持構件661之保持 面與第2吸引保持構件662之㈣面上(保持步驟）。 s執行上述保持步驟後，使構成張力賦與機構66之圖 中未示之移動機構作動，使第丨吸引保持構件661與第2吸引 保持構件662如第i〇(b)圖所示，於相互分離之方向移動。結 果，在置於第1吸引保持構件661之保持面與第2吸引保持構 件662之保持面間之切割道22，拉伸力作用於與切割道垂 直相交之方向，形成於藍寶石基板2〇之變質層21〇形成為斷 開之起點，光學元件晶圓2沿著切割道22斷開（斷開步驟）。 藉執行此斷開步驟，保持膠帶4〇略為伸展。在此斷開步驟， 由於光學元件晶圓2沿著切割道22形成變質層21〇，而使強 条低故使第1吸引保持構件661與第2吸引保持構件662 於相互分離之方向移動0.5mm左右，藉此，形成於藍寶石 基板20之變質層21〇形成為斷開之起點，而可將光學元件曰 圓2沿著切割道22斷開。 曰曰 當如上述，執行沿著形成於預定方向之1條切割道22斷 開之斷開步驟後，解除上述第1吸引保持構件661及第2吸弓丨 保持構件662所作之光學元件晶圓2之吸引保持。接著， 移動機構6 3作動，使移動台6 2於箭號Y所示之方向（參照第$ 17 201133921 圖 牛):動相當於切割道22之間隔之距離’與已執行上述切斷 二笛之切贿22相狀_道22置於構趣力賦與機構於 之第1吸引保持構件之保持面與第2別保持構件呢之 保持面之間。然後，執行±述保持步驟及斷開步驟。 之保持面及 接著’藉對形 之 晶 如以上進行’當對形成於預定方向之所有切割道现 仃上述保持步驟及關步驟後，使旋動機構65作動，而使 框架保持機構64旋動腎。絲，簡•雜持機構料 之框架保持構件642之光學科晶圓2亦旋動9g度，形成於 與形成於預定方向，已執行上述切斷步驟之切割道22垂直 相交之切割道22置放成與第丨吸引保持構件661 第2吸引保持構件662之保持面平行之狀態。接 成於與已執行上述切斷步驟之切割道22垂直㈣之方向 所有切割道22執行上述保持步驟及斷開步驟，光學元件 圓2沿著切割道22，分割成諸個光學元件。 田執行上述晶圓斷開步驟後，執行研磨光學元件之背 面’去除變質層之變制去除步驟。此變f層去除步驟使 用上述第7圖所示之研磨裝置5來執行。即，如第11圖所示， 將已執行上述晶圓斷開步驟之光學元件晶圓2(已分割成諸 個光予元件23)之保護膠帶4〇側載置於研磨裝置$之吸盤台 51上’同時，將環狀框架4載置於吸盤台51之外周部，使圖 t未不之吸引機構作動’將光學元件晶圓2及環狀框架4吸 引保持於吸盤台51上。因而，保持於吸盤台51上之光學元 件曰曰圓2之藍寶石基板20之背面20b形成為上側。如此進 行’當將光學元件晶圓2吸引㈣於吸盤台51上後，一面以 201133921 500i*pm旋轉吸盤台51，一面使研磨工具52以lOOOrpm旋轉， 而接觸構成光學元件晶圓2之藍寶石基板20之背面，同時， 切削進給預定量至去除上述變質層210之位置為止。結果， 研磨構成光學元件晶圓2之藍寶石基板20之背面20b，如第 12圖所示’可使殘留於分割成諸個之光學元件23側面之變 質層210去除。如此，藉去除殘留於分割成諸個之光學元件 23側面之變質層21〇，可謀求光學元件23之亮度之提高。 當執行上述變質層去除步驟後，執行晶圓移轉步驟， 該晶圓移轉步驟係將分割成諸個光學元件之光學元件晶圓 之背面貼附於裝設在環狀框架之保護膠帶表面，同時，將 貼附有光學元件晶圓表面之上述保護膠帶40剝離，以去除 上述環狀框架4者。如第13(a)圖所示，此晶圓移轉步驟係從 紫外線照射器400對裝設在環狀框架4之保護膠帶40(貼附 有分割成諸個光學元件23之光學元件晶圓2)照射紫外線。 結果’保護膠帶40之黏著糊硬化，而可使黏著力降低。接 著，如第13(b)圖所示’將裝設在環狀框架4a之保護膠帶40a 之表面（在第13(b)圖為下面）貼附於貼附在裝設於環狀框架 4之保護膠帶40，而構成光學元件晶圓2之藍寶石基板20背 面20b(在第13(b)圖為上面）。此外，環狀框架4a及保護膠帶 4〇a與上述環狀框架4及保護膠帶40實質上可為相同之結 構。然後，如第13(c)圖所示，將表面貼附於保護膠帶4〇之 光學元件晶圓2(分割成諸個光學元件23)從保護膠帶4〇剝 離。此時’如第13(a)圖所示’由於對保護膠帶4〇照射紫外 線’保s蔓膠帶40之黏著糊硬化，而可使點著力降低，故可 19 201133921 易將光學讀晶圓2(分割成㈣料元件23)從保護 40。然後，H铸裝料倾膠㈣之環狀絲4,如第叫 圖所示，可將分割成諸個元件之光學元件晶圓2移轉至裝< 在環狀框架4a之保護膠㈣a表面。如此，由^日圓_ = 驟係在將晶圓表面貼附於裝設在環狀框⑸之保護膠帶仙 之狀態下’執行上述背面研磨步驟、晶圓斷開步驟及 層去除步驟，將光學元件晶騎割成諸個元件U後執行， 故可在不將光學元件晶圓2_下，將其表面背面翻轉，改 貼於裝設在環狀框架4a之保護料術。因而， 成諸個光學元件23之光學元件„2改貼於裝設在環= 架4a之保護膠㈣a之狀態下，執行光學元件以導通測 如上述 虽執行晶®㈣步驟後，執行拾取步驟，^ 拾取步_將_於裝設在環狀框架之料料表面，^ 分割成諸個之光學元件從保護膠㈣_拾取者。此拾卑 步驟係使用第14圖所示之拾取裝置7來執行。第"圖所示之 拾取裝置7具備保持上述環狀㈣蚊框架保持機構m 裝設於保持在該框架保持機構71之環狀框架4a之保護膠帶 術擴張的膠帶擴張機構72、拾取筒夹73。框架保持機構7】 由環狀框㈣持構件711、及㈣於該㈣料構件川之 外周’作為固定機構之複數個夾m構成。框架保持構件川 之上面形成載置環狀框架4a之載置面叫，可將環狀框架 ^載置於此載置面71社。然後，載置於载置面711a上之 環狀框架如以夾712固定於框架保持構件7U。如此構成之 20 201133921 框架保持機構71以膠帶擴張機構72支撐成可於上下方向進 退0 膠帶擴張機構72具備配設於上述環狀框架保持構件 711内側之擴張滾筒72卜此擴張滚筒721具有小於環狀框架 4a之内徑，大於裝設在該環狀框架4a之光學元件晶圓2(分割 成諸個光學元件23)之外徑的内徑及外徑。又，擴張滾筒m 於下端具有支撐凸緣722。圖中所示之實施形態之膠帶擴張 機構72具備可使上述環狀框架保持構件711於上下方向進 退之支撐機構723。此支撐機構723由配設於上述支撐凸緣 722之複數個氣缸723a構成，其活塞桿72313連結於上述環狀 框架保持構件711之下面。如此，由龍減缸723a構成之 支撐機構723如第15(a)圖所*，可使環狀框㈣持構件川 在載置面711a為與擴張滚筒721上端約略相同之高度的基 準位置與如第啊圖所示比舰滾筒Ml上端低預定量之 擴張位置間在上下方向移動。 f用如以上構成之拾取裝置7來執行之拾取步驟參 宝I Λ味圖-作°兄明。即’將裝設了貼附有光學元件晶圓2(分 :'個疋件)之保護膠帶40a之環狀框架4a如第15⑻圖所 ^置於構成料料機構71之框架㈣構件川之載置 /上，以失712固定於框架保持構件711(框架保持步 琶，^架保持構件711置於第丨5⑷圖所示之基準位 個f#構成膠帶㈣機構72之支撐麟723之複數 圖 a作動，使環狀框架保持構件711下降至第15(b) 不之擴張位置L由於固定於框架雜構件川之 21 201133921 載置面711a上之環狀框架4a亦下降，故如第^^)圖所示， 裝設在環狀框架4a之保護膠帶40a接觸擴張滾筒721之上端 緣’而擴張(膠帶擴張步驟）。結果，由於貼附於保護膠帶他 之光學元件晶圓2沿著切割道22分割成諸個光學元件23，故 諸個70件23間擴大，而形成間隔s。在此狀態下，使拾取筒 夾73作動’吸附保持光學元件23之表面（上面），將之從保護 膠帶40a剝離而拾取。此時，如第15(b)圖所示，藉從保護膠 帶4〇a之下側以頂推針74頂推元件23，可易將光學元件^從 保護膠帶40a剝離。由於此頂推針74作用於光學元件以之背 面來頂推，故不致使光學元件23之表面損傷。此外，在拾 取步驟，如上述，諸個光學元件23間之間隙8擴大，故不致 與相鄰之光學元件23接觸，而可易拾取。如此，由於以拾 取筒夾73可吸附保持拾取之光學元件23，故之後不需將光 學元件23之表背面翻轉。 以上，依據圖中所示之實施形態，說明了本發明， 本發明不僅限於實施形態，可在本發明之旨趣之範圍進 行各種變形。舉例言之，在上述實施形態中，晶圓斷開 步驟例示了拉伸力作用於與形成有作為斷開起點之變質 層之切割道垂直相交的方向，將晶圓沿著形成有變質層 之切割道斷開之例，晶圓斷開步驟亦可使用如日本專利 公開公報2006-107273號或日本專利公開公報 2006-128211號所揭示，使彎曲應力沿著切割道作用於強 度沿著切割道降低之晶圓，而將晶圓沿著切割道斷開的 方法等其他斷開方法。 22 201133921 i:圖式簡單說明3 第1圖係顯示光學元件晶圓之立體圖。 第2圖係構成光學元件晶圓之藍寶石基板之立體圖。 第3圖係用以執行本發明光學元件晶圓之加工方法之 變質層形成步驟之雷射加工裝置的主要部份立體圖。 第4(a)圖〜第4(c)圖係本發明光學元件晶圓之加工方法 之變質層形成步驟的說明圖。 第5(a)圖、第5(b)圖係藉執行本發明光學元件晶圓之加 工方法之光學元件晶圓形成步驟所製造之光學元件晶圓的 立體圖及將主要部份放大顯示之截面圖。 第6圖係顯示執行本發明光學元件晶圓之加工方法之 保護構件貼附步驟，將晶圓表面貼附於裝設在環狀框架之 保護膠帶之狀態的立體圖。 第7圖係本發明光學元件晶圓之加工方法之背面研磨 步驟的說明圖。 第8圖係將已執行本發明光學元件晶圓之加工方法之 背面研磨步驟之光學元件晶圓的主要部份放大顯示之截面 圖。 第9圖係用以執行本發明光學元件晶圓之加工方法之 晶圓斷開步驟之晶圓斷開裝置的立體圖。 第10(a)圖、第10(b)圖係本發明光學元件晶圓之加工方 法之晶圓斷開步驟的說明圖。 第11圖係本發明光學元件晶圓之加工方法之變質層去 除步驟的說明圖。 5 23 201133921 第12圖係將已執行本發明光學元件晶圓之加工方法之 變質層去除步驟之光學元件晶圓主要部份放大顯示的截面 圖。 第13 (a)圖〜第13 (d)圖係本發明之光學元件晶圓之加工 方法之晶圓移轉步驟的說明圖。 第14圖係用以執行本發明光學元件晶圓之加工方法之 拾取步驟之拾取裝置的立體圖。 第15(a)圖、第15(b)圖係本發明光學元件晶圓之加工方 法之拾取步驟的說明圖。 【主要元件符號說明】 2...光學元件晶圓 32...雷射光線照射機構 2a...表面 33...拍攝機構 3...雷射加工裝置 40，40a...保護膠帶 4，4a...環狀框架 51...吸盤台 5...研磨裝置 52…研磨工具 6...晶圓斷開裝置 61...基台 7...拾取裝置 62...移動台 20···藍寶石基板 63...移動機構 20a…表面 64...框架保持機構 20b...背面 65...旋動機構 21...發光層 66...張力賦與機構 22...切割道 67...檢測機構 23...光學元件 71...框架保持機構 31...吸盤台 72...膠帶擴張機構 24 201133921 73.. .拾取筒夾 74.. .頂推針 201.. .缺口 210.. .變質層 321.. .殼體 322.. .聚光器 400.. .紫外線照射器 521.. .磨石 611，612··.導軌 641.. .本體 642.. .框架保持構件 643.. .夾 651.. .脈衝馬達 652.. .滑輪 653.. .無端皮帶 661.. .第1吸引保持構件 661a，662a...吸引孔 662.. .第2吸引保持構件 671.. .支撐柱 711.. .環狀框架保持構件 711a...載置面 712···夾 721.. .擴張滚筒 722.. .支撐凸緣 723.. .支撐機構 723a...氣缸 723b···活塞桿 X，XI，Y...箭號 P...聚光點 25Average output: 0.3W Condensing spot diameter: φ ΐ ~ 1.5 / / m Processing feed speed: 400 mm / sec When the above-described metamorphic layer forming step is performed under the above processing conditions, centering on the condensed point P of the pulsed laser ray, An altered layer 210 of about 50//m is formed. Therefore, by performing the above-described altered layer forming step, the altered layer of about 50 / / m is formed on the side of the back surface 20b from the position of 30 / / m from the surface 20a (lower surface) of the sapphire substrate 20. Further, the altered layer 210 formed inside the sapphire substrate 20 is preferably formed on the back surface 20b side from a position of 5 to 60 μm from the surface 20a of the sapphire substrate 20. As described above, since the light-emitting layer (crystal film layer) 21 is formed on the surface of the sapphire substrate 20 before the formation of the optical element 23 in the step of forming the altered layer, the light-emitting layer (wafer layer) 21 is not damaged by the laser light. Further, the step of forming the deteriorated layer is performed in a thick state (for example, 430/m) before the sapphire substrate 20 constituting the optical element wafer 2 is polished to a predetermined thickness, which is described later, so that the pulsed laser light can be easily used. The spot P is placed at the desired position. 12 201133921, in addition to performing an optical element wafer forming step, the optical element wafer forming step is performed on the sapphire substrate 2〇2 coffee layer 4 optical element layer having performed the above-described altered layer forming step, in a lattice-shaped plural A plurality of regions of the dicing streets form optical elements to form the optical element wafer 3. This optical element wafer forming step can be carried out by the method of Japanese Patent Laid-Open No. Hei. By doing so, performing the optical element wafer=step', as shown in FIGS. 5(4) and 5(b), the optical element can be fabricated, and the blue photonic element wafer is attached to the blue sound that has performed the above-described metamorphic layer forming step. The surface 2〇a of the substrate 20 is laminated with the light-emitting layer (crystal film 2) 2 as an optical element layer, and the plurality of the plurality of butterflies are formed into a lattice shape. In the substrate 2 of the thus constructed optical element wafer 2, a modified layer 210 is formed along a plurality of dicing streets 22 which are formed in a braid shape. After the above-described optical element forming step, the protective member attaching step of attaching the protective member to the surface of the optical γ-shaped bright circle is performed to protect the optical elements formed on the surface of the optical iridium. That is, as shown in Fig. 6, the surface area of the optical 71 wafer 2 is attached to the surface of the protective tape 4 which is provided as a protective member, which is provided in a garment-like frame 4 formed of a metal material. Further, the above-mentioned side glue f 40 is applied to the surface of the sheet base material composed of κ ethylene (PVC) having a thickness of 1 (9) (7), and the thickness of the acrylic resin paste is about 5. This paste uses a property in which the adhesion is lowered by irradiation of ultraviolet rays. In the above-described protective member attaching step, the surface 2a of the optical element wafer 2 is attached to the protective tape 装 mounted on the annular frame 4, and the back surface of the optical element wafer is polished 13 201133921 to form a predetermined thickness. Back grinding step. This back grinding step is performed using the polishing apparatus 5 shown in Fig. 7. The polishing apparatus 5 shown in Fig. 7 includes a chuck table 51 for holding a workpiece, and a polishing tool 52 having a grindstone 521 for grinding a workpiece held on the chuck table 51. Further, the suction pad table 51 is formed to have a high center portion of the workpiece, and the outer peripheral portion is formed to be lower than the center portion. To perform the above-described back grinding step using the polishing apparatus 5 thus constructed, as shown in FIG. 7, the side of the protective tape 40 of the optical element wafer 2 on which the above-described altered layer forming step has been performed is placed on the chuck table of the polishing apparatus 50. At the same time, the annular frame 4 is placed on the outer peripheral portion of the chuck table 51. The optical element wafer 2 and the annular frame 4 are sucked and held by the chuck table 51 by the suction mechanism (not shown). Therefore, the back surface 20b of the sapphire substrate 20 of the optical element wafer 2 held on the chuck table 51 is formed as the upper side. In this manner, when the optical element wafer 2 is sucked and held on the chuck table 51, the chuck 51 is rotated at 500 rpm, and the polishing tool 52 is rotated at 1000 rpm to contact the back surface 20b of the sapphire substrate 20 constituting the optical element wafer 2. At the same time, the grinding feeds a predetermined amount. As a result, the back surface 2〇b of the sapphire substrate 20 constituting the optical element crystal 2 is polished, and the sapphire substrate 20 constituting the optical element wafer 2 is formed to have a predetermined thickness (e.g., go v m). As a result, the altered layer 210 is exposed to the back surface 20b of the sapphire substrate 20 constituting the optical element wafer 2 as shown in Fig. 8. In this manner, after the step of forming the above-described deteriorated layer is performed, the back grinding step is performed to form the thickness of the wafer to a predetermined thickness, so that the thickness of the deteriorated layer can be minimized and the productivity can be improved. After performing the above-described back grinding step, an external force is applied to the optical element wafer to break the wafer along the scribe line on which the altered layer is formed, and the wafer is disconnected into 14 wafers. This wafer disconnection step 6 is performed using the wafer disconnecting device 6 shown in FIG. The wafer disconnecting device 6 shown in Fig. 9 is provided with a base 61, and a moving table 62 disposed on the base 61 so as to be movable in the direction indicated by the arrow γ. The base 61 is formed in a rectangular shape, and two guide rails 611 and 612 are disposed in parallel with each other in the direction indicated by the arrow Y on both side portions thereof. The moving table 62 is movably disposed on the two guide rails 611, 612. The mobile station 62 is moved by the moving mechanism 63 in the direction indicated by the arrow Y. A frame holding mechanism 64 that holds the annular frame 4 is disposed on the moving table 62. The frame holding mechanism 64 is composed of a cylindrical main body portion 641, an annular frame holding member 642 provided at the upper end of the main body 641, and an outer circumference of the frame holding member 642, and is composed of a plurality of clips 643 as a fixed mechanism. The frame holding mechanism 64 thus constructed is fixed to the annular frame 4 placed on the frame holding member 642 by the clip 643. Further, the wafer breaking device 6 shown in Fig. 9 is provided with a turning mechanism 65 for rotating the frame holding mechanism 64. The rotation mechanism 65 is composed of a pulse motor 651 disposed on the moving table 62, a pulley 652 attached to the rotating shaft of the pulse motor 651, and an endless belt 653 wound around the pulley 652 and the cylindrical body 641. The rotation mechanism 65 thus constructed can drive the pulse motor 651 to rotate the frame holding mechanism 64 by the pulley 652 and the endless belt 653. The wafer breaking device 第 shown in FIG. 9 is provided with an optical element wafer 2 supported by the annular frame 4 held by the annular frame holding member 642 by a protective tape 40, and the tensile force acts on The tension imparting mechanism 66 in the direction in which the scribe lines 22 intersect perpendicularly. The tension applying mechanism 66 is disposed in the annular frame holding member 64. The tension applying mechanism 66 has a first suction holding member 6 61 and a second suction 15 201133921 holding member 662 having a rectangular holding surface that is long in a direction perpendicular to the direction of the arrow γ. The suction holding member 661 is formed with a plurality of "holes a" formed in the second suction holding member _ with a plurality of suction holes. The plurality of suction holes 661a and 6 must be in communication with a suction mechanism not shown in the drawing. The first holding member 661 and the second suction holding member are respectively moved in the arrow Y direction by the moving mechanism not shown in the figure. • The wafer breaking device 6 shown in Fig. 9 is provided for detecting the protective tape. 40 buildings are detected and torn in the optical element wafer 2 of the annular frame* of the annular frame (10) member (4). The detecting mechanism (4) is mounted on the base 6 with a glyph 67 The detecting mechanism is configured by an optical system, a photographing device (CCD), or the like, and is disposed above the tension applying mechanism 66. The detecting mechanism thus configured is held by the protective tape 40 in the ring frame. After the brittle of the optical component wafer 2 of the ring frame of the holding member (4) is cut, the energy is converted into an energy number and sent to a control mechanism (not shown). The wafer breaking device 6 is used to execute the same. The disconnection of the wafer is described with reference to Figure 10. ~' The annular frame 4 of the optical wafer 2, which has been subjected to the metamorphic layer forming step by the protective tape 40, is placed on the frame holding member 642 as shown in Fig. 1 (4). Then, the moving mechanism 63 is actuated to move the moving table 62 in the direction in which the arrow γ is displayed (see FIG. 9). As shown in the first figure (4), the optical element wafer 2 is formed in the pre-turn. One (four) direction 22 of the direction (the leftmost cutting path in the embodiment shown in the drawing) is placed on the holding surface of the first and second holding members (6) constituting the tension applying mechanism 66 and the second suction holding member 662. At this time, the cutting path 22 is photographed by the mechanism 67 at the time of inspection 201133921, and the alignment of the holding surface of the second suction holding member 66i and the holding surface of the second suction holding member 662 is performed. After being placed between the holding surface of the first holding member 661 and the holding surface of the suction holding member 662, the suction mechanism (not shown) is actuated to apply a negative pressure to the suction holes 661aB62b, thereby Protective tape 4〇 attracts the optical component wafer The holding surface of the holding member 661 and the (fourth) surface of the second suction holding member 662 are held (holding step). s After the holding step is performed, the movement of the tension applying mechanism 66 is not shown. When the mechanism is actuated, the second suction holding member 661 and the second suction holding member 662 are moved in the direction in which they are separated from each other as shown in the first diagram (b). As a result, the holding surface of the first suction holding member 661 is placed on the holding surface. The cutting path 22 between the holding faces of the second attraction holding member 662, the tensile force acts on the direction perpendicular to the scribe line, and the altered layer 21 formed on the sapphire substrate 2 is formed as a starting point for disconnection, the optical element wafer 2 is broken along the cutting path 22 (breaking step). By performing this disconnecting step, the tape 4 is kept slightly stretched. In this disconnection step, since the optical element wafer 2 forms the altered layer 21〇 along the dicing street 22, the first strip holding member 661 and the second suction holding member 662 are moved in the direction in which they are separated from each other by 0.5. By about mm, the altered layer 21 formed on the sapphire substrate 20 is formed as a starting point of disconnection, and the optical element dome 2 can be broken along the dicing street 22. When the opening step of disconnecting one of the dicing streets 22 formed in the predetermined direction is performed as described above, the optical element wafers of the first suction holding member 661 and the second suction yoke holding member 662 are released. 2 attracts to keep. Next, the moving mechanism 63 is actuated to move the mobile station 6 2 in the direction indicated by the arrow Y (refer to the figure of $17 201133921): the distance corresponding to the interval of the cutting path 22' The bribe 22 phase is formed between the holding surface of the first attraction holding member and the holding surface of the second holding member. Then, the h holding step and the disconnecting step are performed. The holding surface and then 'by the shape of the crystal as described above', after all the cutting lanes formed in the predetermined direction are now subjected to the above-described holding step and closing step, the rotating mechanism 65 is actuated, and the frame holding mechanism 64 is rotated. kidney. The optical wafer 2 of the frame holding member 642 of the wire, the simple structure, is also rotated by 9 g degrees, and is formed in a cutting path 22 which is perpendicularly intersected with the cutting path 22 formed in the predetermined direction and having performed the cutting step described above. The release is in a state of being parallel to the holding surface of the second suction holding member 661 and the second suction holding member 662. The dicing line 22 is subjected to the above-described holding and breaking steps in the direction perpendicular to the dicing line 22 in which the above-described cutting step has been performed. The optical element circle 2 is divided along the dicing street 22 into optical elements. After performing the above wafer disconnection step, the field performs a modification removal step of removing the metamorphic layer from the back side of the polishing optical element. This variable f layer removing step is carried out using the polishing apparatus 5 shown in Fig. 7 described above. That is, as shown in Fig. 11, the side of the protective tape 4 on which the optical element wafer 2 (which has been divided into the light-receiving elements 23) having been subjected to the above-described wafer breaking step is placed on the chuck table of the polishing apparatus $ At the same time, the annular frame 4 is placed on the outer peripheral portion of the chuck table 51, and the suction mechanism is activated by the drawing unit. The optical element wafer 2 and the annular frame 4 are sucked and held by the chuck table 51. Therefore, the back surface 20b of the sapphire substrate 20 of the optical element dome 2 held on the chuck table 51 is formed as the upper side. In this way, when the optical element wafer 2 is attracted (four) to the chuck table 51, the chuck table 51 is rotated at 201133921 500i*pm, and the polishing tool 52 is rotated at 1000 rpm to contact the sapphire substrate constituting the optical element wafer 2. At the same time as the back surface of 20, the cutting feed is advanced by a predetermined amount to the position where the above-described deteriorated layer 210 is removed. As a result, the back surface 20b of the sapphire substrate 20 constituting the optical element wafer 2 is polished, and as shown in Fig. 12, the modified layer 210 remaining on the side surface of the optical element 23 divided can be removed. Thus, the brightness of the optical element 23 can be improved by removing the altered layer 21 残留 remaining on the side surface of the optical element 23 divided. After performing the above-described metamorphic layer removing step, performing a wafer transfer step of attaching the back surface of the optical element wafer divided into the optical elements to the surface of the protective tape mounted on the annular frame At the same time, the protective tape 40 to which the surface of the optical element wafer is attached is peeled off to remove the annular frame 4. As shown in FIG. 13(a), the wafer transfer step is performed from the ultraviolet ray irradiator 400 to the protective tape 40 mounted on the annular frame 4 (the optical component wafer divided into the optical elements 23 is attached) 2) Irradiation of ultraviolet light. As a result, the adhesive tape of the protective tape 40 is hardened, and the adhesive force can be lowered. Next, as shown in Fig. 13(b), the surface of the protective tape 40a attached to the annular frame 4a (the lower side in Fig. 13(b)) is attached to the surface of the annular frame 4 attached thereto. The protective tape 40 is formed on the back surface 20b of the sapphire substrate 20 constituting the optical element wafer 2 (above in Fig. 13(b)). Further, the annular frame 4a and the protective tape 4〇a may have substantially the same structure as the annular frame 4 and the protective tape 40 described above. Then, as shown in Fig. 13(c), the optical element wafer 2 (divided into optical elements 23) to which the surface is attached to the protective tape 4 is peeled off from the protective tape 4''. At this time, as shown in Fig. 13(a), 'the ultraviolet ray of the protective tape 4 保 s smear tape 40 is hardened by the adhesive paste, so that the point can be reduced, so it is easy to read the wafer 2 201133921 (Divided into (four) material elements 23) from protection 40. Then, the loop wire 4 of the H casting compound (4), as shown in the figure, can transfer the optical component wafer 2 divided into the components to the protective tape (4) a in the annular frame 4a. surface. In this way, by performing the above-mentioned back grinding step, wafer disconnecting step, and layer removing step by attaching the surface of the wafer to the protective tape provided in the annular frame (5) by the Japanese yen _ = After the element crystal is cut into the elements U, the surface of the optical element wafer 2_ is turned over and the surface is backsideped, and the protective material is mounted on the annular frame 4a. Therefore, the optical element „2 of the optical elements 23 is affixed to the state of the protective glue (4) a provided in the ring=frame 4a, and the optical element is turned on to conduct the measurement step as described above after performing the step of the crystal (4). , ^ picking step _ will be mounted on the surface of the material of the annular frame, ^ divided into optical components from the protective rubber (four) _ picker. This picking step uses the pick-up device 7 shown in Figure 14. The picking device 7 shown in the figure is provided with a tape expanding mechanism 72 for holding the protective tape of the annular (four) mosquito frame holding mechanism m attached to the annular frame 4a held by the frame holding mechanism 71, The pick-up collet 73. The frame holding mechanism 7 is composed of a ring-shaped frame (four) holding member 711, and (d) a plurality of clips m as a fixing mechanism on the outer circumference of the (four) material member. The frame holding member is formed on the upper surface of the ring. The mounting surface of the frame 4a is called, and the annular frame is placed on the mounting surface 71. Then, the annular frame placed on the mounting surface 711a is fixed to the frame holding member 7U by the clip 712. Composition 20 201133921 Frame Maintenance Agency 7 1 is supported by the tape expansion mechanism 72 so as to be movable in the up and down direction. The tape expansion mechanism 72 includes an expansion roller 72 disposed inside the annular frame holding member 711. The expansion roller 721 has an inner diameter smaller than that of the annular frame 4a, and is larger than The inner diameter and the outer diameter of the outer diameter of the optical element wafer 2 (divided into the optical elements 23) of the annular frame 4a. Further, the expansion roller m has a support flange 722 at the lower end. The tape expansion mechanism 72 of the embodiment includes a support mechanism 723 that allows the annular frame holding member 711 to advance and retreat in the vertical direction. The support mechanism 723 is composed of a plurality of cylinders 723a disposed on the support flange 722, and a piston rod thereof. 72313 is connected to the lower surface of the annular frame holding member 711. Thus, the support mechanism 723 composed of the dragon reduction cylinder 723a can be configured such that the annular frame (four) holding member is placed on the mounting surface 711a as shown in Fig. 15(a). The reference position of the height which is approximately the same height as the upper end of the expansion drum 721 is moved in the up and down direction between the expansion position which is lower than the upper end of the ship drum M1 by a predetermined amount as shown in the figure. f is performed by the pickup device 7 constructed as above Picking step ginseng I Λ 图 - 作 作 作 作 作 即 即 即 即 即 即 即 即 即 即 即 即 即 即 即 即 即 即 环状 环状 环状 环状 环状 环状 环状 环状 环状 环状 环状 环状 环状 环状 环状 环状 环状 环状 环状 环状 环状 环状 环状 环状 环状 环状^ placed on the frame (4) member of the material sizing mechanism 71, and the 712 is fixed to the frame holding member 711 (the frame holding step 琶, the frame holding member 711 is placed at the reference position shown in Fig. 5(4) The f# constitutes the tape (4) The support of the support member 723 of the mechanism 72 is actuated, and the annular frame holding member 711 is lowered to the 15th (b). The expansion position L is fixed to the frame member member Chuanzhi 21 201133921 The mounting surface 711a The upper annular frame 4a is also lowered. Therefore, as shown in Fig. 2, the protective tape 40a attached to the annular frame 4a is in contact with the upper end edge of the expansion drum 721 to expand (tape expansion step). As a result, since the optical element wafer 2 attached to the protective tape is divided into the optical elements 23 along the dicing street 22, the 70 pieces 23 are enlarged to form the interval s. In this state, the pickup collet 73 is actuated to "adhere and hold the surface (upper surface) of the optical element 23, peel it off from the protective tape 40a, and pick it up. At this time, as shown in Fig. 15(b), the optical member 2 can be easily peeled off from the protective tape 40a by pushing the member 23 by pushing the needle 74 from the lower side of the protective tape 4〇a. Since the ejector pin 74 acts on the back side of the optical element to push it, the surface of the optical element 23 is not damaged. Further, in the pickup step, as described above, the gap 8 between the optical elements 23 is enlarged, so that it is not in contact with the adjacent optical member 23, and can be easily picked up. Thus, since the pickup optical element 23 can be sucked and held by the pickup collet 73, it is not necessary to invert the front and back surfaces of the optical element 23 thereafter. The present invention has been described with reference to the embodiments shown in the drawings. The present invention is not limited to the embodiments, and various modifications may be made without departing from the scope of the invention. For example, in the above embodiment, the wafer breaking step exemplifies that the tensile force acts in a direction perpendicular to the scribe line on which the altered layer as the starting point of the break is formed, and the wafer is formed along the deformed layer. In the case where the scribe line is broken, the wafer detaching step can also be performed by using a bending stress along the scribe line along the scribe line as disclosed in Japanese Patent Laid-Open Publication No. 2006-107273 or Japanese Patent Laid-Open Publication No. Hei No. 2006-128211. Other methods of disconnecting, such as lowering the wafer, and breaking the wafer along the scribe line. 22 201133921 i: Simple illustration of the diagram 3 Figure 1 shows a perspective view of the wafer of optical components. Fig. 2 is a perspective view of a sapphire substrate constituting an optical element wafer. Fig. 3 is a perspective view showing a main part of a laser processing apparatus for performing a modified layer forming step of the method for processing an optical element wafer of the present invention. 4(a) to 4(c) are explanatory views showing a step of forming an altered layer of the method for processing an optical element wafer of the present invention. 5(a) and 5(b) are perspective views of an optical element wafer manufactured by performing an optical element wafer forming step of the method for processing an optical element wafer of the present invention, and a cross section showing an enlarged main portion Figure. Fig. 6 is a perspective view showing a state in which the protective member attaching step of the method for processing an optical element wafer of the present invention is carried out, and the surface of the wafer is attached to a protective tape attached to the annular frame. Fig. 7 is an explanatory view showing a back grinding step of the method for processing an optical element wafer of the present invention. Fig. 8 is a cross-sectional view showing an enlarged main portion of an optical element wafer on which a back grinding step of a method for processing an optical element wafer of the present invention has been carried out. Figure 9 is a perspective view of a wafer breaking device for performing a wafer breaking step of the method for processing an optical element wafer of the present invention. Figs. 10(a) and 10(b) are explanatory views showing a wafer disconnecting step of the method for processing an optical element wafer of the present invention. Fig. 11 is an explanatory view showing a step of removing the deteriorated layer of the method for processing an optical element wafer of the present invention. 5 23 201133921 Fig. 12 is a cross-sectional view showing an enlarged main portion of an optical element wafer in which a modified layer removing step of the method for processing an optical element wafer of the present invention is performed. Figs. 13(a) to 13(d) are explanatory views of the wafer transfer step of the method for processing an optical element wafer of the present invention. Fig. 14 is a perspective view of a pickup device for carrying out the pickup step of the method for processing an optical element wafer of the present invention. Fig. 15(a) and Fig. 15(b) are explanatory views showing the pickup steps of the processing method of the optical element wafer of the present invention. [Main component symbol description] 2...optical element wafer 32...laser light irradiation mechanism 2a...surface 33...photographing mechanism 3...laser processing device 40, 40a...protective tape 4, 4a... annular frame 51... suction cup table 5... polishing device 52: polishing tool 6... wafer disconnecting device 61... base station 7... pickup device 62... Mobile station 20··· sapphire substrate 63...moving mechanism 20a...surface 64...frame holding mechanism 20b...back surface 65...spinning mechanism 21...lighting layer 66...tension imparting mechanism 22...cutting path 67...detecting mechanism 23...optical element 71...frame holding mechanism 31...sucking table 72...tape expanding mechanism 24 201133921 73.. picking collet 74.. Push pin 201.. . Notch 210.. . Metamorphic layer 321 .. . Housing 322.. concentrator 400.. UV illuminator 521.. Grindstone 611, 612 · · Guide 641. . Body 642.. Frame holding member 643.. Clip 651.. Pulse motor 652.. Pulley 653.. Endless belt 661.. 1st attraction holding member 661a, 662a... suction hole 662 . . . 2nd attraction holding member 671.. support column 711.. annular frame holding member 711a... placed 712··· Clip 721.. .Expansion roller 722.. Support flange 723.. Support mechanism 723a...Cylinder 723b···Piston rod X, XI, Y... Arrow P... Light spot 25