JP2007305687A - Dicing method and dicing device of wafer - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a dicing method and a dicing device of wafer in which a wafer can be diced while preventing minute fragments, scattered when the wafer is diced along a scheduled dicing line where a deterioration layer is formed by imparting an external force, from adhering to a device. <P>SOLUTION: In the dicing method of wafer; a wafer having a plurality of scheduled dicing lines formed in the surface with devices being formed in a plurality of regions sectioned by the plurality of scheduled dicing lines and having a deterioration layer formed internally along the plurality of scheduled dicing lines is broken along the plurality of scheduled dicing lines, while sticking the backside to a holding tape applied to an annular frame. The wafer is broken along the plurality of scheduled dicing lines by imparting an external force to the wafer along the scheduled dicing line where the deterioration layer is formed under a state where the annular frame supporting the wafer through the holding tape is held while directing the wafer surface downward. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  According to the present invention, a wafer in which a plurality of division lines are formed in a lattice shape on the surface and devices are formed in a plurality of regions partitioned by the plurality of division lines is individually provided along the division lines. The present invention relates to a wafer dividing method for dividing the wafer into chips.

  In the semiconductor device manufacturing process, a plurality of regions are partitioned by dividing lines called streets arranged in a lattice pattern on the surface of a substantially disc-shaped semiconductor wafer, and circuits such as ICs, LSIs, etc. are partitioned in these partitioned regions. Form. Then, by cutting the semiconductor wafer along the planned dividing line, the region where the circuit is formed is divided to manufacture individual semiconductor chips. In addition, optical device wafers with gallium nitride compound semiconductors laminated on the surface of a sapphire substrate are also divided into individual light emitting diodes, CCDs, and other optical devices by cutting along the predetermined division lines, which are used in electrical equipment. Widely used.

  The cutting along the division lines such as the above-described semiconductor wafer and optical device wafer is usually performed by a cutting device called a dicer. This cutting apparatus includes a chuck table for holding a workpiece such as a semiconductor wafer or an optical device wafer, a cutting means for cutting the workpiece held on the chuck table, and a chuck table and the cutting means. And a cutting feed means for moving it. The cutting means includes a rotary spindle, a cutting blade mounted on the spindle, and a drive mechanism that rotationally drives the rotary spindle. The cutting blade is composed of a disk-shaped base and an annular cutting edge mounted on the outer periphery of the side surface of the base. The cutting edge is fixed to the base by electroforming, for example, diamond abrasive grains having a particle size of about 3 μm. It is formed to a thickness of about 20 μm.

  However, since the sapphire substrate, the silicon carbide substrate, etc. have high Mohs hardness, cutting with the cutting blade is not always easy. Furthermore, since the cutting blade has a thickness of about 20 μm, the dividing line for partitioning the device needs to have a width of about 50 μm, and there is a problem that the area ratio occupied by the street is high and the productivity is poor.

On the other hand, in recent years, as a method of dividing a plate-like workpiece such as a semiconductor wafer, a pulse laser beam that uses a pulsed laser beam that is transparent to the workpiece and aligns a condensing point inside the region to be divided A laser processing method for irradiating the film has also been attempted. In the dividing method using this laser processing method, a pulse laser beam in an infrared light region having a light-transmitting property with respect to the work piece is irradiated from the one surface side of the work piece to the inside, and irradiated. The workpiece is divided by continuously forming a deteriorated layer along the planned division line inside the workpiece and applying external force along the planned division line whose strength has been reduced by the formation of this modified layer. To do. (For example, refer to Patent Document 1.)
Japanese Patent No. 3408805

  When the wafer is divided into individual chips by applying an external force along the planned dividing line of the wafer in which the altered layer is formed along the planned dividing line as described above, the divided chips do not fall apart. The wafer is attached to a holding tape. And as for the wafer stuck on a holding tape, in order to make the bonding process after dividing | segmenting into each chip | tip easy, the back surface is stuck on a holding tape. Therefore, the wafer is in a state where the surface is exposed.

  Thus, when the wafer is divided by applying an external force along the planned dividing line on which the deteriorated layer is formed, fine debris is scattered, and the fine debris adheres to the device and breaks during wire bonding. Cause it to cause. Further, in the case where the device is an optical device such as a light emitting diode or CCD, there is a problem that the quality is remarkably deteriorated when fine fragments are attached.

  The present invention has been made in view of the above-mentioned facts, and the main technical problem thereof is that fine debris scattered when the wafer is divided by applying an external force along the division line on which the altered layer is formed. It is an object to provide a wafer dividing method and a dividing apparatus which can be divided without adhering to a device.

In order to solve the main technical problem, according to the present invention, a plurality of division lines are formed in a lattice shape on the surface, and a device is formed in a plurality of regions partitioned by the plurality of division lines. This is a method of dividing a wafer in which a deteriorated layer is formed along a plurality of division lines, and the wafer is broken along the plurality of division lines while the back surface is attached to a holding tape attached to an annular frame. And
With the annular frame supporting the wafer via the holding tape held with the wafer surface facing down, external force is applied along the planned division line where the altered layer is formed on the wafer, and the wafer is divided. Break along,
A method of dividing a wafer is provided.

It is desirable to remove static electricity charged on the wafer by supplying ionized air to the front surface of the wafer with the back surface attached to the holding tape mounted on the annular frame.
Further, the external force applied along the planned dividing line to the wafer whose back surface is attached to the holding tape attached to the annular frame is given by expanding the holding tape.

Further, according to the present invention, a plurality of division lines are formed in a lattice shape on the surface, and a device is formed in a plurality of regions partitioned by the plurality of division lines, and along the plurality of division lines inside. In the wafer splitting apparatus, the wafer with the altered layer formed is broken along a plurality of split planned lines with the back surface being stuck to a holding tape attached to an annular frame.
Frame holding means for holding the annular frame;
A tape expansion means for expanding a holding tape attached to an annular frame held by the frame holding means, and a wafer attached to the holding tape attached to the annular frame held by the frame holding means. A static elimination means for supplying ionized air from below and removing static electricity charged on the wafer,
A wafer dividing apparatus is provided.

  According to the method for dividing a wafer according to the present invention, the annular frame supporting the wafer via the holding tape is held with the surface of the wafer facing down, along the scheduled dividing line in which the altered layer is formed on the wafer. Since the external force is applied, the fine fragments scattered when the wafer is broken along the deteriorated layer fall by its own weight and do not adhere to the device formed on the surface of the wafer. In addition, when the wafer breaking process is performed, ionized air is supplied to the surface of the semiconductor wafer to remove static electricity charged on the surface of the wafer, so that the wafer is broken along the deteriorated layer. The fine debris that scatters during the process does not adhere to the device due to static electricity.

  DESCRIPTION OF EMBODIMENTS Hereinafter, preferred embodiments of a wafer dividing method and a dividing apparatus according to the present invention will be described in detail with reference to the accompanying drawings.

  FIG. 1 shows a perspective view of a semiconductor wafer as a wafer separated into individual chips according to the present invention. A semiconductor wafer 10 shown in FIG. 1 is made of a silicon wafer, and a plurality of division lines 101 are formed in a lattice pattern on a surface 10a. On the surface 10 a of the semiconductor wafer 10, devices 102 are formed in a plurality of regions partitioned by a plurality of division lines 101. Hereinafter, a dividing method for dividing the semiconductor wafer 10 into individual semiconductor chips will be described.

In order to divide the semiconductor wafer 10 into individual semiconductor chips, a pulsed laser beam having transparency to the semiconductor wafer 10 is irradiated along the plurality of division lines 101, and a plurality of division lines are formed inside the semiconductor wafer 10. A deteriorated layer forming step is performed in which the deteriorated layer is formed along the line 101 and the strength is lowered along the planned division line.
This deteriorated layer forming step is performed using the laser processing apparatus 2 shown in FIG. A laser processing apparatus 2 shown in FIG. 2 has a chuck table 21 that holds a workpiece, a laser beam irradiation means 22 that irradiates a workpiece held on the chuck table 21 with a laser beam, and a chuck table 21 that holds the workpiece. An image pickup means 23 for picking up an image of the processed workpiece is provided. The chuck table 21 is configured to suck and hold a workpiece. The chuck table 21 is processed and fed in a direction indicated by an arrow X in FIG. 2 by a processing feed means (not shown), and is also shown in FIG. 2 by an index feed means (not shown). Indexing and feeding are performed in the direction indicated by Y.

  The laser beam irradiation means 22 irradiates a pulsed laser beam from a condenser 222 attached to the tip of a cylindrical casing 221 disposed substantially horizontally. In addition, the image pickup means 23 attached to the tip of the casing 221 constituting the laser beam irradiation means 12 is not a normal image pickup device (CCD) for picking up an image with visible light in the illustrated embodiment, but is applied to a workpiece. Infrared illuminating means for irradiating infrared light, an optical system for capturing the infrared light irradiated by the infrared illuminating means, an image pickup device (infrared CCD) for outputting an electrical signal corresponding to the infrared light captured by the optical system, and the like The captured image signal is sent to the control means described later.

The deteriorated layer forming step performed using the laser processing apparatus 1 described above will be described with reference to FIGS.
In this deteriorated layer forming process, first, the semiconductor wafer 10 is placed on the chuck table 21 of the laser processing apparatus 2 shown in FIG. 2 with the back surface 10b facing up, and the semiconductor wafer 10 is sucked and held on the chuck table 21. To do. The chuck table 21 that sucks and holds the semiconductor wafer 10 is positioned directly below the image pickup means 23 by a processing feed means (not shown).

  When the chuck table 21 is positioned directly below the image pickup means 23, an alignment operation for detecting a processing region to be laser processed of the semiconductor wafer 10 is executed by the image pickup means 23 and a control means (not shown). That is, the image pickup unit 23 and a control unit (not shown) include a division line 101 formed in a predetermined direction of the semiconductor wafer 10 and a condenser 222 of the laser beam irradiation unit 22 that irradiates a laser beam along the division line 101. Image processing such as pattern matching is performed for alignment with the laser beam, and alignment of the laser beam irradiation position is performed. Similarly, the alignment of the laser beam irradiation position is performed on the plurality of division lines 101 formed in the direction orthogonal to the plurality of division lines 101 formed on the semiconductor wafer 10. At this time, the surface 10a on which the plurality of division lines 101 of the semiconductor wafer 10 are formed is positioned on the lower side. However, as described above, the imaging unit 23 uses the infrared illumination unit, the optical system that captures infrared rays, and the infrared ray. Since the image pickup device is provided with an image pickup device (infrared CCD) or the like that outputs a corresponding electric signal, it is possible to pick up an image of the planned division line 101 through the back surface 10b.

  As shown in FIG. 3A, if the division line 101 formed on the semiconductor wafer 10 held on the chuck table 21 is detected and the laser beam irradiation position is aligned as described above. The chuck table 21 is moved to the laser beam irradiation area where the condenser 222 of the laser beam irradiation means 22 is located, and one end (the left end in FIG. 3A) of the predetermined division line 101 is connected to the collector of the laser beam irradiation means 22. It is positioned directly below 222. Then, the chuck table 21 is moved at a predetermined processing feed speed in the direction indicated by the arrow X1 in FIG. 3A while irradiating a pulse laser beam having a wavelength that is transmissive to the semiconductor wafer from the condenser 222. When the irradiation position of the condenser 222 of the laser beam irradiation means 22 reaches the position of the other end (the right end in FIG. 3B) as shown in FIG. Is stopped and the movement of the chuck table 21 is stopped. In this deteriorated layer forming step, the condensing point P of the pulse laser beam is matched with the vicinity of the surface 10 a (lower surface) of the semiconductor wafer 10. As a result, the altered layer 110 is formed from the surface 10a to the inside while being exposed to the surface 10a (lower surface) of the semiconductor wafer 10. This altered layer 110 is formed as a melt-resolidified layer.

The processing conditions in the deteriorated layer forming step are set as follows, for example.
Light source: LD excitation Q switch Nd: YVO4 laser Laser wavelength: 1064 nm pulse laser Pulse output: 10 μJ
Condensing spot diameter: φ1μm
Repetition frequency: 100 kHz
Processing feed rate: 100 mm / sec

  The altered layer 110 may be formed only inside so as not to be exposed to the front surface 10a and the back surface 10b, and the above-described laser processing step is performed a plurality of times by changing the condensing point P stepwise. A plurality of altered layers 110 may be formed. Then, the above-described deteriorated layer forming step is performed along all the planned division lines 101 formed on the semiconductor wafer 2.

  If the deteriorated layer 110 is formed along the plurality of planned dividing lines 101 in the semiconductor wafer 10 by the above-described deteriorated layer forming step, the back surface of the wafer on which the deteriorated layer is formed along the planned divided lines is formed on the annular frame. A wafer supporting process is performed in which the wafer is attached to the holding tape attached to the wafer. That is, as shown in FIG. 4, the back surface 10 b of the semiconductor wafer 10 is attached to the surface of the holding tape 30 with the outer periphery mounted so as to cover the inner opening of the annular frame 3. In the illustrated embodiment, the holding tape 30 is formed by applying an acrylic resin-based adhesive to the surface of a sheet base material made of polyvinyl chloride (PVC) having a thickness of 100 μm to a thickness of about 5 μm.

  Note that the wafer support step may be performed before the above-described deteriorated layer forming step. In this case, the above-described process is performed with the back surface 10b of the semiconductor wafer 10 adhered to the surface of the holding tape 30 attached to the annular frame 3. The altered layer forming step is performed. That is, as shown in FIGS. 5A and 5B, the holding tape 30 side of the semiconductor wafer 10 is placed on the chuck table 21 of the laser processing apparatus 2. Then, the semiconductor wafer 10 is held on the chuck table 21 via the holding tape 30 by operating a suction means (not shown). In FIGS. 5A and 5B, the annular frame 3 to which the holding tape 30 is attached is omitted, but the annular frame 3 is appropriately held by the chuck table 21. Held in the means. And the alignment operation | work of the laser beam irradiation position mentioned above is implemented. Next, as shown in FIG. 5 (a), the chuck table 21 is moved to the laser beam irradiation region where the condenser 222 of the laser beam irradiation means 22 is located, and one end of the predetermined division planned line 101 ((a of FIG. ) Is positioned immediately below the condenser 222 of the laser beam irradiation means 22. Then, the chuck table 21 is moved at a predetermined processing feed rate in the direction indicated by the arrow X1 in FIG. 5A while irradiating a pulse laser beam having a wavelength that is transmissive to the semiconductor wafer from the condenser 222. Then, when the irradiation position of the condenser 222 of the laser beam irradiation means 22 reaches the position of the other end (the right end in FIG. 3B) as shown in FIG. 5B, the pulse laser beam. Is stopped and the movement of the chuck table 21 is stopped. In this deteriorated layer forming step, the condensing point P of the pulse laser beam is matched with the vicinity of the back surface 10b (lower surface) of the semiconductor wafer 10. As a result, the altered layer 110 is formed from the back surface 10b to the inside while being exposed on the back surface 10b (lower surface) of the semiconductor wafer 10.

  If the above-mentioned deteriorated layer forming step and wafer supporting step are performed, the divisional schedule in which the deteriorated layer is formed on the wafer with the annular frame supporting the wafer via the holding tape held with the wafer facing down A wafer breaking step is performed in which an external force is applied along the line and the wafer is broken along the line to be divided. This wafer breaking step is performed using the wafer dividing apparatus shown in FIGS. FIG. 6 shows a perspective view of an embodiment of a dividing apparatus constructed according to the present invention, and FIG. 7 shows an exploded perspective view of the dividing apparatus shown in FIG. 6 and 7 includes a fixed base 40, frame holding means 5 that is disposed on the upper surface of the center of the fixed base 40 and holds the annular frame 3, and the frame holding device. A plurality (four in the illustrated embodiment) of tape holding means 6 for holding the holding tape 30 attached to the annular frame 3 held by the means 5, and the plurality of tape holding means 6 are each of a diameter. And a plurality of tape expansion means 7 (four in the illustrated embodiment) that can be moved in the direction.

  The fixed base 40 is formed in a disk shape, and guide grooves 41 and 41 are formed on the upper surface of the fixed base 40 so as to intersect at right angles through the center. Moreover, the outer peripheral part in which the said guide grooves 41 and 41 of the fixed base 40 were formed is formed protruding outward.

  The frame holding means 3 includes four support columns 51 arranged on the upper surface of the fixed base 40 and an annular frame holding member 52 attached to the upper ends of the four support columns 51. . The four support columns 51 are respectively disposed between guide grooves 41 and 41 formed in the fixed base 40. The annular frame holding member 42 is formed in a size substantially corresponding to the annular frame 3, and the upper surface serves as a placement surface 521 for placing the annular frame 3. As shown in FIG. 7, the frame holding member 52 has an inverted L-shaped cross section, and includes a supported surface 522 parallel to the placement surface 521 and a restriction portion 523 depending on the outer peripheral side. ing. Further, the frame holding member 52 is provided with four clamps 53 at the outer periphery at equal angles with each other in the circumferential direction. The frame holding member 52 configured as described above has the supported surface 522 placed on the upper end surfaces of the four support columns 51 and is fixed by a fixing means (not shown).

  The four tape clamping means 6 are disposed on guide grooves 41, 41 formed in the fixed base 40. That is, the four tape clamping means 6 are arranged at equal angles with each other in the circumferential direction. The tape clamping means 6 arranged in this way includes a movable base 61 formed in an L shape, a first clamping mechanism 62 and a first clamping mechanism 62 mounted on the movable base 61 so as to be movable in the vertical direction. 2 clamping mechanisms 63, and a first moving mechanism 64 and a second moving mechanism 65 for moving the first clamping mechanism 62 and the second clamping mechanism 63 in the vertical direction, respectively. The movable base 61 includes a moving part 611 and a support part 612 formed upright from the upper surface of the moving part 611. A guided rail 611a that fits into the guide groove 41 is provided on the lower surface of the moving portion 611. By fitting the guided rail 611a into the guide groove 41, the movable base 61 is fixed in a disk shape. The base 40 is configured to be movable in the radial direction along the guide groove 41. The moving part 611 is formed with a female screw 611b penetrating therethrough. A guide rail 612a extending in the vertical direction is provided on the inner surface (surfaces facing each other) of the support portion 612, and a long groove 612b extending in the vertical direction is formed on the outer surface. The guide rail 612a has a long hole 612c extending from the inner surface to the long groove 612b and extending in the vertical direction.

  The first clamping mechanism 62 includes a support arm 621 movably disposed along a guide rail 612 a provided on the support portion 612 of the movable base 61, and a clamping member attached to the support arm 621. 622. A guide groove 621a that fits with the guide rail 612a is provided at the base end of the support arm 621. By fitting the guide groove 621a to the guide rail 612a, the support arm 621 is moved to the movable base 61. The support portion 612 is configured to be movable in the vertical direction along the guide rail 612a. Further, a female screw block 631c having a female screw 631b is provided at the base portion of the support arm 621, and this female screw block 621c is disposed through the elongated hole 612c. The clamping member 622 is formed with a radius of curvature slightly larger than the radius of the semiconductor wafer 10, and rubber or the like is provided on the upper end surface thereof (the surface facing the clamping member of the second clamping mechanism 63 described later). A friction member 623 having a large friction coefficient is attached. An attachment member 624 is fixed to the back surface of the sandwiching member 622 configured as described above, and this attachment member 624 is detachably attached to the tip of the support arm 631 by a screw 625.

  The second clamping mechanism 63 includes a support arm 631 movably disposed along a guide rail 612 a provided on the support portion 612 of the movable base 61, and a clamping member attached to the support arm 631. 632. A guide groove 631a that fits with the guide rail 612a is provided at the base end of the support arm 631. By fitting the guide groove 631a to the guide rail 612a, the support arm 631 is moved to the movable base 61. The support portion 612 is configured to be movable in the vertical direction along the guide rail 612a. Further, a female screw block 631c having a female screw 631b is provided at the base of the support arm 631, and this female screw block 631c is disposed through the elongated hole 612c. The holding member 632 is formed with a radius of curvature slightly larger than the radius of the semiconductor wafer 10, and a holding tape is provided on a lower end surface thereof (a surface facing the holding member 622 of the first holding mechanism 62). A plastic member 633 such as polytetrafluoroethylene is mounted to prevent adhesion of glue applied to the surface 30. An attachment member 634 is fixed to the back surface of the sandwiching member 632 configured as described above, and this attachment member 634 is detachably attached to the tip of the support arm 631 with a screw 635.

  The first moving mechanism 64 for moving the first clamping mechanism 62 in the vertical direction is disposed in the long groove 612b formed in the support portion 612 of the movable base 61 in parallel with the guide rail 612a. A male screw rod 641 that is screwed with a female screw 621b of a female screw block 621c provided at the base of 621, and a bearing 642 that is disposed on the support portion 612 of the movable base 61 and rotatably supports one end of the male screw rod 641. And a pulse motor 643 connected to the other end of the male screw rod 641 for driving the male screw rod 641 to rotate. The first moving mechanism 64 configured in this manner moves the first clamping mechanism 62 in the vertical direction along the guide rail 612a by driving the pulse motor 643 and rotating the male screw rod 641.

  The second moving mechanism 65 that moves the second clamping mechanism 63 in the vertical direction is arranged on the upper side of the first moving mechanism 64 with the same configuration as the first moving mechanism 64. That is, the second moving mechanism 65 is provided in the long groove 612 b formed in the support portion 612 of the movable base 41 in parallel with the guide rail 612 a and is provided with the female screw block 631 c provided at the base portion of the support arm 631. A male screw rod 651 screwed into the female screw 631b, a bearing 652 disposed on the support portion 612 of the movable base 61 and rotatably supporting one end portion of the male screw rod 651, and the other end of the male screw rod 651. It consists of a pulse motor 653 for rotationally driving the male screw rod 651. The second moving mechanism 65 configured in this manner moves the second clamping mechanism 63 in the vertical direction along the guide rail 612a by driving the pulse motor 653 and rotating the male screw rod 651.

  The four tape expanding means 7 for moving the four tape clamping means 6 in the radial direction are arranged along the guide grooves 41 and 41 of the fixed base 40. The tape expanding means 7 is disposed in parallel with the guide groove 41 and has a male screw rod 71 that is threadedly engaged with a female screw 611 b formed in the moving portion 611 of the movable base 61, and is disposed on the fixed base 40. A bearing 72 that rotatably supports one end of the screw rod 71 and a pulse motor 73 that is connected to the other end of the male screw rod 71 and drives the male screw rod 71 to rotate. The tape extending means configured in this way moves the tape clamping means 6 in the radial direction by driving the pulse motor 73 and rotating the male screw rod 71.

  The wafer dividing device 4 in the illustrated embodiment supplies ionized air from below the wafer attached to the holding tape 30 attached to the annular frame 3 held by the frame holding means 5 to supply the wafer. A static elimination means 8 is provided for removing static electricity charged in the battery. The static elimination means 8 is an ionized air supply device 81 that sends out the ionized air, and a holding device attached to the annular frame 3 that holds the ionized air sent from the ionized air supply device 81 in the frame holding means 5. It consists of an ionized air ejection pipe 82 that ejects toward the wafer adhered to the tape 30.

The wafer dividing device 4 in the embodiment shown in FIG. 6 and FIG. 7 is configured as described above, and referring to FIG. 8 and FIG. 9 as well for the wafer breaking process to be performed using the wafer dividing device 4 hereinafter. I will explain.
An annular frame 3 in which the semiconductor wafer 10 having the altered layer 110 formed along the planned division line 101 as shown in FIGS. 1 and 4 is supported via the holding tape 30 is shown in FIG. As described above, the semiconductor wafer 10 is placed on the mounting surface 521 of the annular frame holding member 52 constituting the frame holding means 5 with the semiconductor wafer 10 facing down, and is fixed to the frame holding member 52 by the clamp 53 (wafer support step). . At this time, the 1st clamping mechanism 62 and the 2nd clamping mechanism 63 which comprise the tape clamping means 6 are located in the standby position shown to (a) of FIG.

  If the annular frame 3 supporting the semiconductor wafer 10 via the holding tape 30 is held by the frame holding member 52, the first holding mechanism 62 and the second holding mechanism 63 constituting the tape holding means 6 are moved in the vertical direction. The first moving mechanism 64 and the second moving mechanism 65 are operated to move the first holding mechanism 62 upward and the second holding mechanism 63 is moved downward. As a result, as shown in FIG. 8B, the friction member 623 attached to the sandwiching member 622 constituting the first sandwiching mechanism 62 disposed opposite to each other and the second sandwiching mechanism 63 are configured. A region between the inner periphery of the annular frame 3 and the semiconductor wafer 10 in the holding tape 30 is held by the friction member 633 attached to the holding member 632. Then, the ionized air supplier 81 of the static elimination means 8 is operated to supply the ionized air from the ionized air jet pipe 82 to the surface a (lower surface) of the semiconductor wafer 10, and the surface a of the semiconductor wafer 10 is charged. Remove static electricity.

  As described above, when the holding tape 30 is clamped by the four tape clamping means 6, the tape expanding means 7 is operated to move the four tape clamping means 6 respectively radially outward. Accordingly, the holding tape 30 attached to the annular frame 3 is radially expanded by the four tape clamping means 6 as shown in FIG. At this time, in the illustrated embodiment, the holding tape 30 is held by the friction members 623 and 633 attached to the holding members 622 and 632, so that the force acting on the tape holding means 6 is reliably applied to the holding tape 30. I can tell you. As a result, a tensile force acts radially on the semiconductor wafer 10 adhered to the holding tape 30. When a tensile force is applied to the semiconductor wafer 10 in a radial manner in this manner, the strength of the altered layer 110 formed along each scheduled division line 101 is reduced, so that the semiconductor wafer 10 breaks along the altered layer 110. And divided into individual semiconductor chips 100. According to experiments by the inventors, the semiconductor wafer 10 could be broken along the deteriorated layer 110 when the holding tape 30 was stretched by about 5 mm. Thus, since it can divide | segment even if there is little stretch amount, the sagging of the holding | maintenance tape 30 can be reduced. Thereafter, the semiconductor chip 100 is picked up by a pick-up collet of pick-up means (not shown) and conveyed to a tray or die bonding process (not shown).

  In the above-described wafer breaking step, since the surface 10a of the semiconductor wafer 10 is performed on the lower side, fine fragments scattered when the semiconductor wafer 10 is broken along the deteriorated layer 110 fall by its own weight. It does not adhere to the device 102 formed on the surface 10a of the semiconductor wafer 10. In the above embodiment, ionized air is supplied to the surface 10 a of the semiconductor wafer 10 to remove the static electricity charged on the surface 10 a of the semiconductor wafer 10, so that the semiconductor wafer 10 extends along the altered layer 110. In other words, the fine debris that is scattered when it is broken does not adhere to the device 102 due to static electricity.

The perspective view of the semiconductor wafer divided | segmented into each chip | tip by the wafer division | segmentation method by this invention. The principal part perspective view of the laser processing apparatus for implementing the deteriorated layer formation process in the division | segmentation method of the wafer by this invention. Explanatory drawing which shows one Embodiment of the deteriorated layer formation process in the division | segmentation method of the wafer by this invention. The perspective view of the wafer which implemented the wafer support process in the division | segmentation method of the wafer by this invention. Explanatory drawing which shows other embodiment of the deteriorated layer formation process in the division | segmentation method of the wafer by this invention. 1 is a perspective view showing an embodiment of a wafer dividing device constructed according to the present invention. FIG. The perspective view which decomposes | disassembles and shows the structural member of the division apparatus of the wafer shown in FIG. 6 shows a state in which an annular frame is held by a frame holding member constituting the wafer dividing apparatus shown in FIG. 6 and a state in which a holding tape attached to the annular frame held by the frame holding member is clamped by a tape clamping means. Illustration. Explanatory drawing which shows the state which act | operates the expansion means which comprises the division | segmentation apparatus of the wafer shown in FIG. 6, and is expanding the holding tape.

Explanation of symbols

2: Laser processing device 21: Chuck table of laser processing device 22: Laser beam irradiation means 23: Imaging means 3: Annular frame 30: Holding tape 4: Tape expansion device 40: Fixed base 5: Frame holding means 51: Support column 52: annular frame holding member 53: clamp 6: tape holding means 61: movable base 62: first clamping mechanism 621: support arm 622: clamping member 623: friction member 63: second clamping mechanism 631: support arm 632: clamping member 633: friction member 64: first moving mechanism 641: male screw rod 643: pulse motor 65: second moving mechanism 651: male screw rod 653: pulse motor 7: tape expansion means 71: male screw rod 73: pulse Motor 8: Static elimination means 81: Ionized air supply device 82: Ionized air Extraction pipe 10: semiconductor wafer 100: a semiconductor chip 101: dividing lines 102: Device 110: altered layer

Claims (4)

A wafer in which a plurality of division lines are formed in a lattice pattern on the surface, a device is formed in a plurality of regions partitioned by the plurality of division lines, and a deteriorated layer is formed along the plurality of division lines inside Is a method for dividing a wafer that breaks along a plurality of division lines in a state where the back surface is attached to a holding tape attached to an annular frame,
With the annular frame supporting the wafer via the holding tape held with the wafer surface facing down, external force is applied along the planned division line where the altered layer is formed on the wafer, and the wafer is divided. Break along,
A wafer dividing method characterized by the above.   2. The wafer dividing method according to claim 1, wherein ionized air is supplied to a surface of a wafer having a back surface attached to a holding tape attached to an annular frame to remove static electricity charged on the wafer.   The method of dividing a wafer according to claim 1 or 2, wherein the external force applied along the line to be divided is applied to the wafer whose back surface is attached to the holding tape attached to the annular frame by extending the holding tape. . A wafer in which a plurality of division lines are formed in a lattice pattern on the surface, a device is formed in a plurality of regions partitioned by the plurality of division lines, and a deteriorated layer is formed along the plurality of division lines inside In a wafer splitting device that breaks along a plurality of scheduled dividing lines in a state where the back surface is attached to a holding tape attached to an annular frame,
Frame holding means for holding the annular frame;
A tape expanding means for expanding a holding tape attached to an annular frame held by the frame holding means, and a wafer attached to the holding tape attached to the annular frame held by the frame holding means. A static elimination means for supplying ionized air from below and removing static electricity charged on the wafer,
A wafer dividing apparatus characterized by the above.

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