JP7130323B2 - ウェーハの加工方法 - Google Patents
ウェーハの加工方法 Download PDFInfo
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- JP7130323B2 JP7130323B2 JP2018093332A JP2018093332A JP7130323B2 JP 7130323 B2 JP7130323 B2 JP 7130323B2 JP 2018093332 A JP2018093332 A JP 2018093332A JP 2018093332 A JP2018093332 A JP 2018093332A JP 7130323 B2 JP7130323 B2 JP 7130323B2
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- H—ELECTRICITY
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- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2170/00—Compositions for adhesives
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- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
Description
1a 表面
1b 裏面
3 分割予定ライン
3a 切削痕
5 デバイス
7 フレーム
7a 開口
9 ポリエステル系シート
9a 切断痕
11 フレームユニット
2 チャックテーブル
2a 保持面
2b,40a 吸引源
2c,40b 切り替え部
4 ヒートガン
4a 熱風
6 ヒートローラー
8 赤外線ランプ
8a 赤外線
10 カッター
12 切削装置
14 切削ユニット
16 スピンドルハウジング
18 切削ブレード
20 切削水供給ノズル
22 ピックアップ装置
24 ドラム
26 フレーム保持ユニット
28 クランプ
30 フレーム支持台
32 ロッド
34 エアシリンダ
36 ベース
38 突き上げ機構
40 コレット
Claims (7)
- 複数のデバイスが、分割予定ラインによって区画された表面の各領域に形成されたウェーハを個々のデバイスチップに分割するウェーハの加工方法であって、
ウェーハを収容する開口を有するフレームの該開口内にウェーハを位置付け、該ウェーハの裏面と該フレームの外周とに糊層を備えないポリエステル系シートを配設するポリエステル系シート配設工程と、
該ポリエステル系シートを加熱し熱圧着により該ウェーハと該フレームとを該ポリエステル系シートを介して一体化する一体化工程と、
切削ブレードを回転可能に備えた切削装置を用いて該ウェーハを分割予定ラインに沿って切削して該ウェーハを個々のデバイスチップに分割する分割工程と、
該ポリエステル系シートから個々のデバイスチップをピックアップするピックアップ工程と、
を備えることを特徴とするウェーハの加工方法。 - 該一体化工程において、赤外線の照射によって該熱圧着を実施することを特徴とする請求項1記載のウェーハの加工方法。
- 該一体化工程において、一体化を実施した後、該フレームの外周からはみ出したポリエステル系シートを除去することを特徴とする請求項1記載のウェーハの加工方法。
- 該ピックアップ工程において、該ポリエステル系シートを拡張して各デバイスチップ間の間隔を広げ、該ポリエステル系シート側から該デバイスチップを突き上げることを特徴とする請求項1記載のウェーハの加工方法。
- 該ポリエステル系シートは、ポリエチレンテレフタレートシート、ポリエチレンナフタレートシートのいずれかであることを特徴とする請求項1記載のウェーハの加工方法。
- 該一体化工程において、該ポリエステル系シートが該ポリエチレンテレフタレートシートである場合に加熱温度は250℃~270℃であり、該ポリエステル系シートが該ポリエチレンナフタレートシートである場合に加熱温度は160℃~180℃であることを特徴とする請求項5記載のウェーハの加工方法。
- 該ウェーハは、Si、GaN、GaAs、ガラスのいずれかで構成されることを特徴とする請求項1記載のウェーハの加工方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018093332A JP7130323B2 (ja) | 2018-05-14 | 2018-05-14 | ウェーハの加工方法 |
MYPI2019002296A MY191419A (en) | 2018-05-14 | 2019-04-23 | Wafer processing method |
US16/401,145 US11062948B2 (en) | 2018-05-14 | 2019-05-02 | Wafer processing method |
CN201910375340.5A CN110491783B (zh) | 2018-05-14 | 2019-05-07 | 晶片的加工方法 |
KR1020190054294A KR20190130494A (ko) | 2018-05-14 | 2019-05-09 | 웨이퍼의 가공 방법 |
DE102019206887.1A DE102019206887B4 (de) | 2018-05-14 | 2019-05-13 | Waferbearbeitungsverfahren |
TW108116380A TWI825095B (zh) | 2018-05-14 | 2019-05-13 | 晶圓之加工方法 |
Applications Claiming Priority (1)
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JP2018093332A JP7130323B2 (ja) | 2018-05-14 | 2018-05-14 | ウェーハの加工方法 |
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JP2019201049A JP2019201049A (ja) | 2019-11-21 |
JP7130323B2 true JP7130323B2 (ja) | 2022-09-05 |
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US (1) | US11062948B2 (ja) |
JP (1) | JP7130323B2 (ja) |
KR (1) | KR20190130494A (ja) |
CN (1) | CN110491783B (ja) |
DE (1) | DE102019206887B4 (ja) |
MY (1) | MY191419A (ja) |
TW (1) | TWI825095B (ja) |
Families Citing this family (6)
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JP7139048B2 (ja) * | 2018-07-06 | 2022-09-20 | 株式会社ディスコ | ウェーハの加工方法 |
JP2021015840A (ja) * | 2019-07-10 | 2021-02-12 | 株式会社ディスコ | ウェーハの加工方法 |
JP7430515B2 (ja) * | 2019-11-06 | 2024-02-13 | 株式会社ディスコ | ウエーハの処理方法 |
JP7408237B2 (ja) * | 2020-01-16 | 2024-01-05 | 株式会社ディスコ | ウェーハの加工方法 |
JP7404109B2 (ja) | 2020-03-02 | 2023-12-25 | 株式会社ディスコ | 一体化方法 |
JP2023060969A (ja) | 2021-10-19 | 2023-05-01 | 株式会社ディスコ | 加工装置 |
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JP2012054582A (ja) | 2006-06-23 | 2012-03-15 | Hitachi Chem Co Ltd | 接着フィルム |
WO2016151911A1 (ja) | 2015-03-23 | 2016-09-29 | リンテック株式会社 | 半導体加工用シートおよび半導体装置の製造方法 |
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JPS4968657A (ja) * | 1972-11-06 | 1974-07-03 | ||
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CN110491783B (zh) | 2024-02-23 |
KR20190130494A (ko) | 2019-11-22 |
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CN110491783A (zh) | 2019-11-22 |
TWI825095B (zh) | 2023-12-11 |
DE102019206887B4 (de) | 2024-02-08 |
US11062948B2 (en) | 2021-07-13 |
US20190348327A1 (en) | 2019-11-14 |
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MY191419A (en) | 2022-06-27 |
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