JP7408237B2 - ウェーハの加工方法 - Google Patents
ウェーハの加工方法 Download PDFInfo
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- JP7408237B2 JP7408237B2 JP2020005338A JP2020005338A JP7408237B2 JP 7408237 B2 JP7408237 B2 JP 7408237B2 JP 2020005338 A JP2020005338 A JP 2020005338A JP 2020005338 A JP2020005338 A JP 2020005338A JP 7408237 B2 JP7408237 B2 JP 7408237B2
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- 238000003672 processing method Methods 0.000 title claims description 21
- -1 polyethylene Polymers 0.000 claims description 34
- 238000005498 polishing Methods 0.000 claims description 23
- 229920000098 polyolefin Polymers 0.000 claims description 19
- 238000004140 cleaning Methods 0.000 claims description 17
- 229920000728 polyester Polymers 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 14
- 239000004698 Polyethylene Substances 0.000 claims description 8
- 239000004743 Polypropylene Substances 0.000 claims description 8
- 239000004793 Polystyrene Substances 0.000 claims description 8
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 claims description 8
- 229920000573 polyethylene Polymers 0.000 claims description 8
- 239000011112 polyethylene naphthalate Substances 0.000 claims description 8
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 8
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 8
- 229920001155 polypropylene Polymers 0.000 claims description 8
- 229920002223 polystyrene Polymers 0.000 claims description 8
- 239000006061 abrasive grain Substances 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 167
- 239000010410 layer Substances 0.000 description 22
- 239000012790 adhesive layer Substances 0.000 description 14
- 238000005520 cutting process Methods 0.000 description 11
- 239000002390 adhesive tape Substances 0.000 description 10
- 238000002844 melting Methods 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 7
- 239000012530 fluid Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 230000001678 irradiating effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 230000003028 elevating effect Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
- C09J7/24—Plastics; Metallised plastics based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
- C09J7/241—Polyolefin, e.g.rubber
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
- C09J7/25—Plastics; Metallised plastics based on macromolecular compounds obtained otherwise than by reactions involving only carbon-to-carbon unsaturated bonds
- C09J7/255—Polyesters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Dicing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
波長 :1064nm
繰り返し周波数 :50kHz
平均出力 :1W
加工送りの速度 :200mm/秒
1a :表面
1b :裏面
3 :分割予定ライン
3a :改質層
5 :デバイス
7 :フレーム
7a :開口
9 :熱圧着シート
9a :切断痕
11 :平坦化部材(平坦性維持部材)
13 :フレームユニット
2 :チャックテーブル
2a :枠体
2b :保持板
2c :保持面
2d :バルブ
2e :吸引源
4 :ヒートガン
4a :熱風
6 :ヒートローラー
10 :カッター
12 :チャックテーブル
12a :枠体
12b :保持板
12c :外周部
12d :中央部
12e :保持面
12f :吸引口
12g :バルブ
12h :吸引源
14 :加工ユニット
16 :スピンドル
18 :マウンタ
20 :研磨工具
20a :基台
20b :研磨パッド
22 :スピンナテーブル
24 :ノズル
26 :レーザー加工ユニット
26a :レーザービーム
26b :加工ヘッド
26c :集光点
28 :拡張装置
30 :ドラム
32 :フレーム保持ユニット
34 :支持テーブル
36 :クランプ
38 :昇降機構
40 :基台
42 :シリンダケース
44 :ピストンロッド
46 :突き上げ機構
Claims (8)
- 分割予定ラインによって区画された表面の複数の領域にそれぞれデバイスが形成されたウェーハの裏面を研削又は研磨するウェーハの加工方法であって、
ウェーハを収容できる大きさの開口を有するフレームの該開口にウェーハを位置づけて該ウェーハの該表面と該フレームとに熱圧着シートを熱圧着することで、該ウェーハと該フレームとが該熱圧着シートを介して一体化されたフレームユニットを形成するフレームユニット形成工程と、
該フレームユニットを加工装置のチャックテーブルで保持する保持工程と、
該ウェーハの該裏面を該加工装置の加工ユニットで研削又は研磨する加工工程と、
該チャックテーブルから該フレームユニットを搬出して加工済みの該ウェーハを洗浄する洗浄工程と、
を含み、
該フレームユニット形成工程において、該熱圧着シートの平坦性を維持する平坦化部材を該ウェーハと該フレームとの間に配置した状態で該ウェーハと該フレームとに該熱圧着シートを熱圧着することを特徴とするウェーハの加工方法。 - 該加工工程において、砥粒を含む研磨パッドを用いて該ウェーハの該裏面を乾式で研磨することを特徴とする請求項1に記載のウェーハの加工方法。
- 該熱圧着シートは、ポリオレフィン系シートであることを特徴とする請求項1又は請求項2に記載のウェーハの加工方法。
- 該ポリオレフィン系シートは、ポリエチレンシート、ポリプロピレンシート、ポリスチレンシートのいずれかであることを特徴とする請求項3に記載のウェーハの加工方法。
- 該ポリオレフィン系シートが該ポリエチレンシートの場合、該フレームユニット形成工程において120℃~140℃の温度で該ポリエチレンシートを熱圧着し、該ポリオレフィン系シートが該ポリプロピレンシートの場合、該フレームユニット形成工程において160℃~180℃の温度で該ポリプロピレンシートを熱圧着し、該ポリオレフィン系シートが該ポリスチレンシートの場合、該フレームユニット形成工程において220℃~240℃の温度で該ポリスチレンシートを熱圧着することを特徴とする請求項4に記載のウェーハの加工方法。
- 該熱圧着シートは、ポリエステル系シートであることを特徴とする請求項1又は請求項2に記載のウェーハの加工方法。
- 該ポリエステル系シートは、ポリエチレンテレフタレートシート、又はポリエチレンナフタレートシートであることを特徴とする請求項6に記載のウェーハの加工方法。
- 該ポリエステル系シートが該ポリエチレンテレフタレートシートの場合、該フレームユニット形成工程において250℃~270℃の温度で該ポリエチレンテレフタレートシートを熱圧着し、該ポリエステル系シートが該ポリエチレンナフタレートシートの場合、該フレームユニット形成工程において160℃~180℃の温度で該ポリエチレンナフタレートシートを熱圧着することを特徴とする請求項7に記載のウェーハの加工方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020005338A JP7408237B2 (ja) | 2020-01-16 | 2020-01-16 | ウェーハの加工方法 |
SG10202012502XA SG10202012502XA (en) | 2020-01-16 | 2020-12-14 | Wafer processing method |
KR1020200174921A KR20210092671A (ko) | 2020-01-16 | 2020-12-15 | 웨이퍼의 가공 방법 |
TW110100870A TW202129828A (zh) | 2020-01-16 | 2021-01-08 | 晶圓的加工方法 |
CN202110036691.0A CN113199390B (zh) | 2020-01-16 | 2021-01-12 | 晶片的加工方法 |
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JP2020005338A JP7408237B2 (ja) | 2020-01-16 | 2020-01-16 | ウェーハの加工方法 |
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JP2021114501A JP2021114501A (ja) | 2021-08-05 |
JP7408237B2 true JP7408237B2 (ja) | 2024-01-05 |
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JP (1) | JP7408237B2 (ja) |
KR (1) | KR20210092671A (ja) |
CN (1) | CN113199390B (ja) |
SG (1) | SG10202012502XA (ja) |
TW (1) | TW202129828A (ja) |
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JP2017054843A (ja) | 2015-09-07 | 2017-03-16 | 株式会社ディスコ | ウェーハの加工方法 |
JP2018060873A (ja) | 2016-10-03 | 2018-04-12 | 株式会社ディスコ | ウエーハの加工方法 |
JP2018133371A (ja) | 2017-02-13 | 2018-08-23 | 株式会社ディスコ | ウエーハの加工方法 |
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JP2019220550A (ja) | 2018-06-19 | 2019-12-26 | 株式会社ディスコ | ウエーハの加工方法 |
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JP2017054843A (ja) | 2015-09-07 | 2017-03-16 | 株式会社ディスコ | ウェーハの加工方法 |
JP2018060873A (ja) | 2016-10-03 | 2018-04-12 | 株式会社ディスコ | ウエーハの加工方法 |
JP2018133371A (ja) | 2017-02-13 | 2018-08-23 | 株式会社ディスコ | ウエーハの加工方法 |
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