TWI699391B - 樹脂組成物的製造方法及樹脂組成物 - Google Patents

樹脂組成物的製造方法及樹脂組成物 Download PDF

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Publication number
TWI699391B
TWI699391B TW104109270A TW104109270A TWI699391B TW I699391 B TWI699391 B TW I699391B TW 104109270 A TW104109270 A TW 104109270A TW 104109270 A TW104109270 A TW 104109270A TW I699391 B TWI699391 B TW I699391B
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TW
Taiwan
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filter
resin composition
radiation
sensitive
resin
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TW104109270A
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English (en)
Chinese (zh)
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TW201536842A (zh
Inventor
藤森亨
森弘喜
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日商富士軟片股份有限公司
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
TW104109270A 2014-03-31 2015-03-24 樹脂組成物的製造方法及樹脂組成物 TWI699391B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014074550A JP2015197509A (ja) 2014-03-31 2014-03-31 感活性光線性又は感放射線性樹脂組成物の製造方法及び感活性光線性又は感放射線性樹脂組成物
JP2014-074550 2014-03-31

Publications (2)

Publication Number Publication Date
TW201536842A TW201536842A (zh) 2015-10-01
TWI699391B true TWI699391B (zh) 2020-07-21

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Family Applications (1)

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TW104109270A TWI699391B (zh) 2014-03-31 2015-03-24 樹脂組成物的製造方法及樹脂組成物

Country Status (5)

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JP (1) JP2015197509A (ja)
KR (2) KR20180071425A (ja)
CN (1) CN106104386A (ja)
TW (1) TWI699391B (ja)
WO (1) WO2015151765A1 (ja)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3435158A4 (en) * 2016-03-24 2019-01-30 Fujifilm Corporation ACTIVE RADIATIVE OR RADIATIVE COMPOSITION, METHOD FOR CLEANING AN ACTIVE RADIATION-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, STRUCTURE-FORMING METHOD, AND METHOD FOR PRODUCING AN ELECTRONIC DEVICE
WO2019022174A1 (ja) * 2017-07-26 2019-01-31 富士フイルム株式会社 ろ過装置、精製装置、薬液の製造装置、ろ過済み被精製物、薬液、及び、感活性光線性又は感放射線性樹脂組成物
CN111902773B (zh) * 2018-03-26 2024-09-06 富士胶片株式会社 感光性树脂组合物及其制造方法、抗蚀剂膜、图案形成方法以及电子器件的制造方法
WO2020203246A1 (ja) * 2019-03-29 2020-10-08 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物の製造方法、パターン形成方法、電子デバイスの製造方法
WO2021060071A1 (ja) * 2019-09-27 2021-04-01 富士フイルム株式会社 感放射線性樹脂組成物の製造方法、パターン形成方法、電子デバイスの製造方法
JP2021076841A (ja) * 2019-11-11 2021-05-20 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法

Citations (3)

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US20090081586A1 (en) * 2005-05-13 2009-03-26 Jsr Corporation Process for producing radiation-sensitive resin composition
TW201041911A (en) * 2009-03-23 2010-12-01 Jsr Corp Polymer and positive radiation-sensitive resin composition
JP2013068914A (ja) * 2011-09-26 2013-04-18 Jsr Corp フォトレジスト組成物及びレジストパターン形成方法

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JP2002062667A (ja) 2000-08-23 2002-02-28 Sumitomo Chem Co Ltd 微粒子量の低減されたフォトレジスト組成物の製造方法
JP5192120B2 (ja) 2004-09-14 2013-05-08 丸善石油化学株式会社 半導体レジスト用共重合体におけるパーティクルの増加防止方法
JP5002137B2 (ja) * 2005-07-28 2012-08-15 富士フイルム株式会社 化学増幅型レジスト組成物及びその製造方法
JPWO2009063726A1 (ja) * 2007-11-12 2011-03-31 Jsr株式会社 フォトレジスト用樹脂の製造方法
JP2009276487A (ja) * 2008-05-14 2009-11-26 Jsr Corp レジスト樹脂含有溶液の製造方法、レジスト樹脂含有溶液、及びろ過装置
JP5136202B2 (ja) * 2008-05-19 2013-02-06 Ｊｓｒ株式会社 レジスト用樹脂含有溶液の製造方法
JP5509660B2 (ja) * 2009-04-08 2014-06-04 Ｊｓｒ株式会社 感放射線性樹脂組成物の製造方法
JP5625547B2 (ja) * 2010-06-30 2014-11-19 住友化学株式会社 レジスト組成物の製造方法
CN101979435B (zh) * 2010-09-28 2012-05-30 昆山西迪光电材料有限公司 含纳米硅紫外厚膜正性光刻胶及其成膜树脂
JP5728884B2 (ja) * 2010-10-20 2015-06-03 Jsr株式会社 感放射線性樹脂組成物及びその製造方法
JP5454458B2 (ja) * 2010-11-25 2014-03-26 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
WO2012133595A1 (ja) * 2011-03-31 2012-10-04 Jsr株式会社 レジストパターン形成方法、感放射線性樹脂組成物及びレジスト膜
US20150001146A2 (en) * 2011-05-09 2015-01-01 Entegris, Inc. Porous Composite Membrane Including Microporous Membrane Layers and Nanofiber Layer
JP6028732B2 (ja) * 2011-08-16 2016-11-16 Jsr株式会社 フォトレジスト組成物
US9182662B2 (en) * 2012-02-15 2015-11-10 Rohm And Haas Electronic Materials Llc Photosensitive copolymer, photoresist comprising the copolymer, and articles formed therefrom
CN103605261B (zh) * 2013-04-21 2019-07-23 深圳莱斯迈迪立体电路科技有限公司 一种紫外正型光刻胶

Patent Citations (3)

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US20090081586A1 (en) * 2005-05-13 2009-03-26 Jsr Corporation Process for producing radiation-sensitive resin composition
TW201041911A (en) * 2009-03-23 2010-12-01 Jsr Corp Polymer and positive radiation-sensitive resin composition
JP2013068914A (ja) * 2011-09-26 2013-04-18 Jsr Corp フォトレジスト組成物及びレジストパターン形成方法

Also Published As

Publication number Publication date
CN106104386A (zh) 2016-11-09
JP2015197509A (ja) 2015-11-09
KR20180071425A (ko) 2018-06-27
KR20160124864A (ko) 2016-10-28
WO2015151765A1 (ja) 2015-10-08
TW201536842A (zh) 2015-10-01

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