TWI683361B - 半導體基板的蝕刻方法及半導體元件的製造方法 - Google Patents

半導體基板的蝕刻方法及半導體元件的製造方法 Download PDF

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Publication number
TWI683361B
TWI683361B TW102140956A TW102140956A TWI683361B TW I683361 B TWI683361 B TW I683361B TW 102140956 A TW102140956 A TW 102140956A TW 102140956 A TW102140956 A TW 102140956A TW I683361 B TWI683361 B TW I683361B
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Taiwan
Prior art keywords
etching
etching solution
semiconductor substrate
silicon
formula
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TW102140956A
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Chinese (zh)
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TW201432809A (zh
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水谷篤史
清水哲也
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日商富士軟片股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Weting (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
TW102140956A 2012-11-13 2013-11-12 半導體基板的蝕刻方法及半導體元件的製造方法 TWI683361B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-249674 2012-11-13
JP2012249674A JP2014099480A (ja) 2012-11-13 2012-11-13 半導体基板のエッチング方法及び半導体素子の製造方法

Publications (2)

Publication Number Publication Date
TW201432809A TW201432809A (zh) 2014-08-16
TWI683361B true TWI683361B (zh) 2020-01-21

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TW102140956A TWI683361B (zh) 2012-11-13 2013-11-12 半導體基板的蝕刻方法及半導體元件的製造方法

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JP (1) JP2014099480A (ja)
KR (1) KR101743101B1 (ja)
TW (1) TWI683361B (ja)
WO (1) WO2014077199A1 (ja)

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US10147619B2 (en) 2015-08-27 2018-12-04 Toshiba Memory Corporation Substrate treatment apparatus, substrate treatment method, and etchant
JP6446003B2 (ja) * 2015-08-27 2018-12-26 東芝メモリ株式会社 基板処理装置、基板処理方法およびエッチング液
KR102446076B1 (ko) * 2015-11-19 2022-09-22 솔브레인 주식회사 식각 조성물 및 이를 이용한 반도체 소자의 제조방법
CN106783739B (zh) * 2015-11-24 2019-08-23 旺宏电子股份有限公司 垂直存储单元的半导体元件及其制造方法
JP2017103328A (ja) 2015-12-01 2017-06-08 株式会社東芝 半導体装置及びその製造方法
US10325779B2 (en) 2016-03-30 2019-06-18 Tokyo Electron Limited Colloidal silica growth inhibitor and associated method and system
US10515820B2 (en) 2016-03-30 2019-12-24 Tokyo Electron Limited Process and apparatus for processing a nitride structure without silica deposition
KR102113189B1 (ko) * 2016-08-23 2020-06-03 오씨아이 주식회사 식각 후 식각 용액의 후처리 방법
CN117568038A (zh) 2016-12-26 2024-02-20 秀博瑞殷株式公社 蚀刻用组合物和使用该蚀刻用组合物制造半导体器件的方法
WO2018168874A1 (ja) * 2017-03-15 2018-09-20 株式会社 東芝 エッチング液、エッチング方法、及び電子部品の製造方法
KR101828437B1 (ko) * 2017-04-06 2018-03-29 주식회사 디엔에스 실리콘 질화막 식각용 조성물.
KR102399990B1 (ko) 2017-09-06 2022-05-23 엔테그리스, 아이엔씨. 질화 규소를 포함하는 기판을 에칭하는 조성물 및 방법
KR102030068B1 (ko) 2017-10-12 2019-10-08 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP6994898B2 (ja) * 2017-10-19 2022-01-14 東京エレクトロン株式会社 基板処理装置、基板処理方法およびプログラム
KR102084164B1 (ko) 2018-03-06 2020-05-27 에스케이씨 주식회사 반도체 공정용 조성물 및 반도체 공정
KR102324275B1 (ko) * 2018-05-03 2021-11-09 삼성에스디아이 주식회사 실리콘 질화막 에칭 조성물 및 이를 이용한 에칭 방법
KR102024758B1 (ko) 2018-05-26 2019-09-25 에스케이이노베이션 주식회사 식각액 조성물, 절연막의 식각방법, 반도체 소자의 제조방법 및 실란화합물
KR102005963B1 (ko) 2018-05-26 2019-07-31 에스케이이노베이션 주식회사 식각액 조성물 및 실란화합물
US11053440B2 (en) 2018-11-15 2021-07-06 Entegris, Inc. Silicon nitride etching composition and method
JP7160642B2 (ja) * 2018-11-16 2022-10-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法、３次元メモリデバイスの製造方法および基板処理装置
CN110804441A (zh) * 2019-11-08 2020-02-18 湖北兴福电子材料有限公司 一种抑制二氧化硅蚀刻的磷酸蚀刻液

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TW576865B (en) * 1998-08-28 2004-02-21 Ashland Inc A composition and method for selectively etching a silicon nitride film
TW200405458A (en) * 2002-09-17 2004-04-01 M Fsi Ltd Regeneration process of etching solution, etching process, and etching system
TW200849371A (en) * 2007-02-28 2008-12-16 Tosoh Corp Etching method and etching composition useful for the method

Also Published As

Publication number Publication date
KR20150048221A (ko) 2015-05-06
WO2014077199A1 (ja) 2014-05-22
JP2014099480A (ja) 2014-05-29
KR101743101B1 (ko) 2017-06-02
TW201432809A (zh) 2014-08-16

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