JP6994898B2 - 基板処理装置、基板処理方法およびプログラム - Google Patents
基板処理装置、基板処理方法およびプログラム Download PDFInfo
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
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- General Physics & Mathematics (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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Description
6 ロット処理部
8 基板
23 エッチング処理装置(処理部)
27 エッチング用の処理槽
80 温度センサ
81 リン酸濃度センサ
82 シリコン濃度センサ
100 制御部
Claims (7)
- リン酸とシリコン含有化合物とを含む処理液に基板を浸漬させてエッチング処理を行う処理部と、
前記エッチング処理の第1処理時間において、第1リン酸濃度、および第1シリコン濃度である前記処理液で前記基板を処理し、前記第1処理時間よりも後の第2処理時間において、前記第1リン酸濃度よりも低い第2所定リン酸濃度、および前記第1シリコン濃度よりも低い第2所定シリコン濃度である前記処理液、または前記第2所定リン酸濃度、および前記第1シリコン濃度である前記処理液で前記基板を処理するように、前記処理液を制御する制御部と
を備え、
前記制御部は、
前記第1処理時間において、第1温度である前記処理液で前記基板を処理し、前記第2処理時間において、前記第1温度よりも低い第2温度である前記処理液で前記基板を処理するように、前記処理液を制御する
ことを特徴とする基板処理装置。 - 前記第1温度および前記第2温度は、前記処理液が所定の沸騰状態となる温度である
ことを特徴とする請求項1に記載の基板処理装置。 - 前記制御部は、
予め設定された情報に基づいて前記処理液の一部を排出し、新たに液体を供給する
ことを特徴とする請求項1または2に記載の基板処理装置。 - 前記制御部は、
前記処理液のシリコン濃度に基づいて前記処理液の一部を排出し、新たに液体を供給する
ことを特徴とする請求項1または2に記載の基板処理装置。 - 前記制御部は、
前記エッチング処理を開始してから所定期間の間、リン酸濃度を、前記基板のシリコン酸化膜をエッチングする所定濃度以上に維持する
ことを特徴とする請求項1から4のいずれか一つに記載の基板処理装置。 - リン酸とシリコン含有化合物とを含む処理液に基板を浸漬させてエッチング処理を行う際に、前記エッチング処理の第1処理時間において、第1リン酸濃度、および第1シリコン濃度である前記処理液で前記基板を処理する工程と、
前記第1処理時間よりも後の第2処理時間において、前記第1リン酸濃度よりも低い第2所定リン酸濃度、および前記第1シリコン濃度よりも低い第2所定シリコン濃度である前記処理液、または前記第2所定リン酸濃度、および前記第1シリコン濃度である前記処理液で前記基板を処理する工程と
を含み、
前記第1処理時間において、第1温度である前記処理液で前記基板が処理され、
前記第2処理時間において、前記第1温度よりも低い第2温度である前記処理液で前記基板が処理される
ことを特徴とする基板処理方法。 - 請求項6に記載の基板処理方法をコンピュータに実行させる、プログラム。
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JP2017202496A JP6994898B2 (ja) | 2017-10-19 | 2017-10-19 | 基板処理装置、基板処理方法およびプログラム |
KR1020180123978A KR102565757B1 (ko) | 2017-10-19 | 2018-10-17 | 기판 처리 장치, 기판 처리 방법 및 프로그램 |
US16/163,918 US10651061B2 (en) | 2017-10-19 | 2018-10-18 | Substrate processing apparatus, substrate processing method and recording medium |
CN201811222568.2A CN109686681B (zh) | 2017-10-19 | 2018-10-19 | 基板处理装置、基板处理方法以及存储介质 |
JP2021142919A JP7113952B2 (ja) | 2017-10-19 | 2021-09-02 | 基板処理方法、および基板処理装置 |
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JP2001023952A (ja) | 1999-03-30 | 2001-01-26 | Tokyo Electron Ltd | エッチング方法及びエッチング装置 |
JP2004134780A (ja) | 2002-09-17 | 2004-04-30 | M Fsi Kk | エッチング液の再生方法、エッチング方法およびエッチング装置 |
JP2004214243A (ja) | 2002-12-27 | 2004-07-29 | Toshiba Corp | 半導体ウェーハのエッチング方法及びエッチング装置 |
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JP5332197B2 (ja) * | 2007-01-12 | 2013-11-06 | 東ソー株式会社 | エッチング用組成物及びエッチング方法 |
JP6087063B2 (ja) | 2012-05-01 | 2017-03-01 | 東京エレクトロン株式会社 | エッチング方法、エッチング装置および記憶媒体 |
JP2014099480A (ja) * | 2012-11-13 | 2014-05-29 | Fujifilm Corp | 半導体基板のエッチング方法及び半導体素子の製造方法 |
JP6994899B2 (ja) * | 2017-10-20 | 2022-01-14 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法および記憶媒体 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2001023952A (ja) | 1999-03-30 | 2001-01-26 | Tokyo Electron Ltd | エッチング方法及びエッチング装置 |
JP2004134780A (ja) | 2002-09-17 | 2004-04-30 | M Fsi Kk | エッチング液の再生方法、エッチング方法およびエッチング装置 |
JP2004214243A (ja) | 2002-12-27 | 2004-07-29 | Toshiba Corp | 半導体ウェーハのエッチング方法及びエッチング装置 |
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US10651061B2 (en) | 2020-05-12 |
US20190122905A1 (en) | 2019-04-25 |
JP2019075518A (ja) | 2019-05-16 |
JP7113952B2 (ja) | 2022-08-05 |
CN109686681A (zh) | 2019-04-26 |
JP2021184503A (ja) | 2021-12-02 |
CN109686681B (zh) | 2024-03-01 |
KR102565757B1 (ko) | 2023-08-10 |
KR20190044008A (ko) | 2019-04-29 |
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