JP2019075518A - 基板処理装置、基板処理方法およびプログラム - Google Patents
基板処理装置、基板処理方法およびプログラム Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims abstract description 192
- 239000000758 substrate Substances 0.000 title claims abstract description 164
- 238000003672 processing method Methods 0.000 title claims abstract description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 307
- 238000005530 etching Methods 0.000 claims abstract description 213
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 153
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 135
- 239000010703 silicon Substances 0.000 claims abstract description 135
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 134
- 238000000034 method Methods 0.000 claims abstract description 106
- 230000008569 process Effects 0.000 claims abstract description 101
- 239000007788 liquid Substances 0.000 claims abstract description 45
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 23
- 239000002210 silicon-based material Substances 0.000 claims abstract description 14
- 238000009835 boiling Methods 0.000 claims description 8
- 238000001556 precipitation Methods 0.000 abstract description 7
- 235000011007 phosphoric acid Nutrition 0.000 description 138
- 239000000243 solution Substances 0.000 description 111
- 230000009467 reduction Effects 0.000 description 60
- 230000007246 mechanism Effects 0.000 description 36
- 239000007864 aqueous solution Substances 0.000 description 31
- 230000007423 decrease Effects 0.000 description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 17
- 229910052581 Si3N4 Inorganic materials 0.000 description 16
- 238000004140 cleaning Methods 0.000 description 14
- 230000004048 modification Effects 0.000 description 12
- 238000012986 modification Methods 0.000 description 12
- 238000001035 drying Methods 0.000 description 10
- 238000011068 loading method Methods 0.000 description 9
- 230000036544 posture Effects 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 230000007723 transport mechanism Effects 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- -1 silicon ions Chemical class 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000003112 inhibitor Substances 0.000 description 3
- 230000032258 transport Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 235000011194 food seasoning agent Nutrition 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- LXPCOISGJFXEJE-UHFFFAOYSA-N oxifentorex Chemical group C=1C=CC=CC=1C[N+](C)([O-])C(C)CC1=CC=CC=C1 LXPCOISGJFXEJE-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- JTDPJYXDDYUJBS-UHFFFAOYSA-N quinoline-2-carbohydrazide Chemical compound C1=CC=CC2=NC(C(=O)NN)=CC=C21 JTDPJYXDDYUJBS-UHFFFAOYSA-N 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000004148 unit process Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
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Abstract
Description
6 ロット処理部
8 基板
23 エッチング処理装置(処理部)
27 エッチング用の処理槽
80 温度センサ
81 リン酸濃度センサ
82 シリコン濃度センサ
100 制御部
Claims (8)
- リン酸とシリコン含有化合物とを含む処理液に基板を浸漬させてエッチング処理を行う処理部と、
前記エッチング処理の第1処理時間において、第1リン酸濃度、および第1シリコン濃度である前記処理液で前記基板を処理し、前記第1処理時間よりも後の第2処理時間において、前記第1リン酸濃度よりも低い第2所定リン酸濃度、および前記第1シリコン濃度よりも低い第2所定シリコン濃度である前記処理液、または前記第2所定リン酸濃度、および前記第1シリコン濃度である前記処理液で前記基板を処理するように、前記処理液を制御する制御部と
を備えることを特徴とする基板処理装置。 - 前記制御部は、
前記第1処理時間において、第1温度である前記処理液で前記基板を処理し、前記第2処理時間において、前記第1温度よりも低い第2温度である前記処理液で前記基板を処理するように、前記処理液を制御する
ことを特徴とする請求項1に記載の基板処理装置。 - 前記第1温度および前記第2温度は、前記処理液が所定の沸騰状態となる温度である
ことを特徴とする請求項2に記載の基板処理装置。 - 前記制御部は、
予め設定された情報に基づいて前記処理液の一部を排出し、新たに液体を供給する
ことを特徴とする請求項1から3のいずれか一つに記載の基板処理装置。 - 前記制御部は、
前記処理液のシリコン濃度に基づいて前記処理液の一部を排出し、新たに液体を供給する
ことを特徴とする請求項1から3のいずれか一つに記載の基板処理装置。 - 前記制御部は、
前記エッチング処理を開始してから所定期間の間、リン酸濃度を、前記基板のシリコン酸化膜をエッチングする所定濃度以上に維持する
ことを特徴とする請求項1から5のいずれか一つに記載の基板処理装置。 - リン酸とシリコン含有化合物とを含む処理液に基板を浸漬させてエッチング処理を行う際に、前記エッチング処理の第1処理時間において、第1リン酸濃度、および第1シリコン濃度である前記処理液で前記基板を処理する工程と、
前記第1処理時間よりも後の第2処理時間において、前記第1リン酸濃度よりも低い第2所定リン酸濃度、および前記第1シリコン濃度よりも低い第2所定シリコン濃度である前記処理液、または前記第2所定リン酸濃度、および前記第1シリコン濃度である前記処理液で前記基板を処理する工程と
を含むことを特徴とする基板処理方法。 - 請求項7に記載の基板処理方法をコンピュータに実行させる、プログラム。
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KR1020180123978A KR102565757B1 (ko) | 2017-10-19 | 2018-10-17 | 기판 처리 장치, 기판 처리 방법 및 프로그램 |
US16/163,918 US10651061B2 (en) | 2017-10-19 | 2018-10-18 | Substrate processing apparatus, substrate processing method and recording medium |
CN201811222568.2A CN109686681B (zh) | 2017-10-19 | 2018-10-19 | 基板处理装置、基板处理方法以及存储介质 |
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JP7130510B2 (ja) | 2018-09-21 | 2022-09-05 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
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