JP2019067810A - 基板処理装置および基板処理方法 - Google Patents
基板処理装置および基板処理方法 Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims abstract description 191
- 239000000758 substrate Substances 0.000 title claims abstract description 187
- 238000003672 processing method Methods 0.000 title claims abstract description 7
- 239000003112 inhibitor Substances 0.000 claims abstract description 130
- 238000005530 etching Methods 0.000 claims abstract description 115
- 239000007788 liquid Substances 0.000 claims abstract description 50
- 238000002156 mixing Methods 0.000 claims abstract description 22
- 239000002210 silicon-based material Substances 0.000 claims abstract description 16
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 211
- 238000001556 precipitation Methods 0.000 claims description 151
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 130
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 105
- 239000003795 chemical substances by application Substances 0.000 claims description 24
- 238000010306 acid treatment Methods 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 48
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 15
- 230000008021 deposition Effects 0.000 abstract description 13
- 229910019142 PO4 Inorganic materials 0.000 abstract description 7
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 abstract description 7
- 239000010452 phosphate Substances 0.000 abstract description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 7
- 239000000203 mixture Substances 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 239000000243 solution Substances 0.000 description 123
- 235000011007 phosphoric acid Nutrition 0.000 description 82
- 239000007864 aqueous solution Substances 0.000 description 59
- 230000007246 mechanism Effects 0.000 description 36
- 238000000034 method Methods 0.000 description 34
- 229910052710 silicon Inorganic materials 0.000 description 27
- 239000010703 silicon Substances 0.000 description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 26
- 230000008569 process Effects 0.000 description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 17
- 238000004140 cleaning Methods 0.000 description 14
- 238000001035 drying Methods 0.000 description 10
- 238000011068 loading method Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 150000004767 nitrides Chemical class 0.000 description 8
- 230000036544 posture Effects 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000007723 transport mechanism Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- -1 silicon ions Chemical class 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000002401 inhibitory effect Effects 0.000 description 3
- 230000032258 transport Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000004599 antimicrobial Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 101100493713 Caenorhabditis elegans bath-45 gene Proteins 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 235000011194 food seasoning agent Nutrition 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- LXPCOISGJFXEJE-UHFFFAOYSA-N oxifentorex Chemical group C=1C=CC=CC=1C[N+](C)([O-])C(C)CC1=CC=CC=C1 LXPCOISGJFXEJE-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- JTDPJYXDDYUJBS-UHFFFAOYSA-N quinoline-2-carbohydrazide Chemical compound C1=CC=CC2=NC(C(=O)NN)=CC=C21 JTDPJYXDDYUJBS-UHFFFAOYSA-N 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
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- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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Abstract
【解決手段】実施形態に係る基板処理装置は、基板処理槽と、リン酸処理液供給部と、循環路と、SiO2析出防止剤供給部と、混合部とを備える。リン酸処理液供給部は、基板処理槽におけるエッチング処理で使用されるリン酸処理液を供給する。循環路は、基板処理槽に供給されたリン酸処理液を循環させる。SiO2析出防止剤供給部は、循環路にSiO2析出防止剤を供給する。混合部は、循環路に供給される前のリン酸処理液にシリコン含有化合物を混合する
【選択図】図2
Description
図1に示すように、第1実施形態に係る基板処理装置1は、キャリア搬入出部2と、ロット形成部3と、ロット載置部4と、ロット搬送部5と、ロット処理部6と、制御部100とを有する。図1は、基板処理装置1の概略平面図である。ここでは、水平方向に直交する方向を上下方向として説明する。
次に、第2実施形態に係る基板処理装置1について図4を参照し説明する。図4は、第2実施形態に係るエッチング用の処理槽27を示す概略ブロック図である。ここでは、第1実施形態とは異なる箇所を中心に説明し、第1実施形態と同様の構成については、第1実施形態と同じ符号を付して詳しい説明は省略する。
次に、第3実施形態に係る基板処理装置1について図6を参照し説明する。図6は、第3実施形態に係るエッチング用の処理槽27を示す概略ブロック図である。ここでは、第1実施形態とは異なる箇所を中心に説明し、第1実施形態と同様の構成については、第1実施形態と同じ符号を付して詳しい説明は省略する。
次に、第4実施形態に係る基板処理装置1について図9を参照し説明する。図9は、第4実施形態に係るエッチング用の処理槽27を示す概略ブロック図である。ここでは、第3実施形態とは異なる箇所を中心に説明し、第3実施形態と同様の構成については、第3実施形態と同じ符号を付して詳しい説明は省略する。
変形例に係る基板処理装置1は、供給ライン70を内槽45に接続し、温調タンク47から予備液を内槽45に供給可能としてもよい。
6 ロット処理部
8 基板
23 エッチング処理装置
27 エッチング用の処理槽
40 リン酸水溶液供給部(リン酸処理液供給部)
40A リン酸水溶液供給源
40B リン酸水溶液供給ライン(リン酸処理液供給ライン)
43 SiO2析出防止剤供給部
43A SiO2析出防止剤供給源
43B SiO2析出防止剤供給ライン
45 内槽(基板処理槽)
46 外槽(混合部)
47 温調タンク(混合部、タンク)
50 第1循環ライン
51 第1ポンプ
52 第1ヒーター
55 循環路
70 供給ライン
80 ミキサー(混合部)
Claims (10)
- 基板処理槽と、
前記基板処理槽におけるエッチング処理で使用されるリン酸処理液を供給するリン酸処理液供給部と、
前記基板処理槽に供給された前記リン酸処理液を循環させる循環路と、
前記循環路にSiO2析出防止剤を供給するSiO2析出防止剤供給部と、
前記循環路に供給される前の前記リン酸処理液にシリコン含有化合物を混合する混合部と
を備えることを特徴とする基板処理装置。 - 基板処理槽と、
前記基板処理槽におけるエッチング処理で使用されるリン酸処理液を供給するリン酸処理液供給部と、
SiO2析出防止剤を供給するSiO2析出防止剤供給部と、
前記基板処理槽に供給された前記リン酸処理液を循環させる循環路と
前記循環路に供給される前の前記リン酸処理液に前記SiO2析出防止剤を混合する混合部と
を備えることを特徴とする基板処理装置。 - 前記混合部は、
前記リン酸処理液供給部から供給された前記リン酸処理液と、前記SiO2析出防止剤供給部から供給された前記SiO2析出防止剤とを混合して貯留する予備タンクである
ことを特徴とする請求項2に記載の基板処理装置。 - 前記リン酸処理液供給部から供給された前記リン酸処理液にシリコン含有化合物を混合して貯留する予備タンク
を備え、
前記混合部は、
前記予備タンクから供給される前記リン酸処理液に前記SiO2析出防止剤を混合する
ことを特徴とする請求項2に記載の基板処理装置。 - 前記混合部は、
常温の前記リン酸処理液に前記SiO2析出防止剤を混合する
ことを特徴とする請求項2に記載の基板処理装置。 - 前記混合部は、
前記リン酸処理液および前記SiO2析出防止剤に乱流を発生させることで前記リン酸処理液に前記SiO2析出防止剤を混合する
ことを特徴とする請求項4または5に記載の基板処理装置。 - 基板処理槽に供給されたリン酸処理液を循環させる循環路にSiO2析出防止剤を供給する工程と、
前記循環路に供給される前の前記リン酸処理液にシリコン含有化合物を混合する工程と
を含むことを特徴とする基板処理方法。 - 基板処理槽に供給されたリン酸処理液を循環させる循環路に供給される前のリン酸処理液にSiO2析出防止剤を混合する工程と、
前記SiO2析出防止剤が混合された前記リン酸処理液を前記循環路に供給する工程と
を含むことを特徴とする基板処理方法。 - 前記SiO2析出防止剤を混合する工程は、
常温の前記リン酸処理液に前記SiO2析出防止剤を混合する
ことを特徴とする請求項8に記載の基板処理方法。 - 前記SiO2析出防止剤を混合する工程は、
前記リン酸処理液および前記SiO2析出防止剤に乱流を発生させて前記リン酸処理液に前記SiO2析出防止剤を混合する
ことを特徴とする請求項8または9に記載の基板処理方法。
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JP2017188533A JP6776208B2 (ja) | 2017-09-28 | 2017-09-28 | 基板処理装置および基板処理方法 |
KR1020180115072A KR102260913B1 (ko) | 2017-09-28 | 2018-09-27 | 기판 처리 장치 및 기판 처리 방법 |
US16/144,016 US20190096711A1 (en) | 2017-09-28 | 2018-09-27 | Substrate processing apparatus and substrate processing method |
CN201811136956.9A CN109585334B (zh) | 2017-09-28 | 2018-09-28 | 基板处理装置和基板处理方法 |
CN201821587754.1U CN208938930U (zh) | 2017-09-28 | 2018-09-28 | 基板处理装置 |
JP2020169632A JP6961058B2 (ja) | 2017-09-28 | 2020-10-07 | 基板処理装置および基板処理方法 |
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KR20220124091A (ko) | 2021-03-02 | 2022-09-13 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 방법 및 기판 처리 장치 |
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KR102264002B1 (ko) * | 2017-10-20 | 2021-06-11 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치, 기판 처리 방법 및 기억 매체 |
CN111696891B (zh) * | 2019-03-15 | 2024-05-03 | 东京毅力科创株式会社 | 基片处理装置、混合方法和基片处理方法 |
JP7433135B2 (ja) * | 2020-05-25 | 2024-02-19 | 東京エレクトロン株式会社 | 貯留装置および貯留方法 |
TW202209471A (zh) * | 2020-05-25 | 2022-03-01 | 日商東京威力科創股份有限公司 | 基板處理裝置及基板處理方法 |
KR102632304B1 (ko) | 2022-01-17 | 2024-02-01 | 솔라로 주식회사 | 충전재 균일 도포장치 |
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- 2018-09-27 KR KR1020180115072A patent/KR102260913B1/ko active IP Right Grant
- 2018-09-28 CN CN201821587754.1U patent/CN208938930U/zh active Active
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JP6776208B2 (ja) | 2020-10-28 |
US20190096711A1 (en) | 2019-03-28 |
CN109585334B (zh) | 2021-11-30 |
CN208938930U (zh) | 2019-06-04 |
KR102260913B1 (ko) | 2021-06-04 |
KR20190037152A (ko) | 2019-04-05 |
CN109585334A (zh) | 2019-04-05 |
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