JP2021184503A - 基板処理方法、および基板処理装置 - Google Patents
基板処理方法、および基板処理装置 Download PDFInfo
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Abstract
Description
6 ロット処理部
8 基板
23 エッチング処理装置(処理部)
27 エッチング用の処理槽
80 温度センサ
81 リン酸濃度センサ
82 シリコン濃度センサ
100 制御部
Claims (5)
- リン酸とシリコン含有化合物とを含む処理液に基板を浸漬させてエッチング処理を行う際に、初期リン酸濃度、初期シリコン濃度、および初期処理液温度である処理液で前記エッチング処理を開始する工程と、
前記エッチング処理を開始してから第1所定時間後にシリコン濃度を前記初期シリコン濃度よりも低くする工程と、
前記シリコン濃度が前記初期シリコン濃度よりも低くされた後に、リン酸濃度を前記初期リン酸濃度よりも低くし、かつ処理液温度を前記初期処理液温度よりも低くする工程と
を含む、基板処理方法。 - 前記シリコン濃度が前記初期シリコン濃度よりも低くされてから第2所定時間後に、前記リン酸濃度が前記初期リン酸濃度よりも低くされ、かつ前記処理液温度が前記初期処理液温度よりも低くされる、請求項1に記載の基板処理方法。
- 前記シリコン濃度、前記リン酸濃度、および前記処理液温度は、前記エッチング処理の処理時間が長くなるにつれて低くされる、請求項1または2に記載の基板処理方法。
- リン酸とシリコン含有化合物とを含む処理液に基板を浸漬させてエッチング処理を行う処理部と、
前記処理液のリン酸濃度、シリコン濃度、および処理液温度を制御する制御部と
を備え、
前記エッチング処理では、初期リン酸濃度、初期シリコン濃度、および初期処理液温度である処理液で前記基板の処理が開始され、
前記制御部は、
前記エッチング処理が開始されてから第1所定時間後にシリコン濃度を前記初期シリコン濃度よりも低くし、
前記シリコン濃度を前記初期シリコン濃度よりも低くした後に、リン酸濃度を前記初期リン酸濃度よりも低くし、かつ処理液温度を前記初期処理液温度よりも低くする、基板処理装置。 - 前記制御部は、
リン酸濃度センサによって検出されるリン酸濃度に基づいて前記処理液中のリン酸濃度を調整し、
シリコン濃度センサによって検出されるシリコン濃度に基づいて前記処理液中のシリコン濃度を調整し、
温度センサによって検出される処理液温度に基づいて前記処理液の温度を調整する、請求項4に記載の基板処理装置。
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KR20200086141A (ko) * | 2019-01-08 | 2020-07-16 | 삼성전자주식회사 | 실리콘 질화물용 식각제 조성물 및 반도체 소자의 제조 방법 |
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JP2001023952A (ja) * | 1999-03-30 | 2001-01-26 | Tokyo Electron Ltd | エッチング方法及びエッチング装置 |
JP2004134780A (ja) * | 2002-09-17 | 2004-04-30 | M Fsi Kk | エッチング液の再生方法、エッチング方法およびエッチング装置 |
JP2013232593A (ja) * | 2012-05-01 | 2013-11-14 | Tokyo Electron Ltd | エッチング方法、エッチング装置および記憶媒体 |
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JP2004214243A (ja) * | 2002-12-27 | 2004-07-29 | Toshiba Corp | 半導体ウェーハのエッチング方法及びエッチング装置 |
JP5332197B2 (ja) * | 2007-01-12 | 2013-11-06 | 東ソー株式会社 | エッチング用組成物及びエッチング方法 |
JP2014099480A (ja) * | 2012-11-13 | 2014-05-29 | Fujifilm Corp | 半導体基板のエッチング方法及び半導体素子の製造方法 |
JP6994899B2 (ja) * | 2017-10-20 | 2022-01-14 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法および記憶媒体 |
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JP2001023952A (ja) * | 1999-03-30 | 2001-01-26 | Tokyo Electron Ltd | エッチング方法及びエッチング装置 |
JP2004134780A (ja) * | 2002-09-17 | 2004-04-30 | M Fsi Kk | エッチング液の再生方法、エッチング方法およびエッチング装置 |
JP2013232593A (ja) * | 2012-05-01 | 2013-11-14 | Tokyo Electron Ltd | エッチング方法、エッチング装置および記憶媒体 |
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US10651061B2 (en) | 2020-05-12 |
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JP7113952B2 (ja) | 2022-08-05 |
CN109686681A (zh) | 2019-04-26 |
JP6994898B2 (ja) | 2022-01-14 |
CN109686681B (zh) | 2024-03-01 |
KR102565757B1 (ko) | 2023-08-10 |
KR20190044008A (ko) | 2019-04-29 |
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