TWI681087B - 矽單結晶的製造方法及矽單結晶的提拉裝置 - Google Patents

矽單結晶的製造方法及矽單結晶的提拉裝置 Download PDF

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Publication number
TWI681087B
TWI681087B TW107144481A TW107144481A TWI681087B TW I681087 B TWI681087 B TW I681087B TW 107144481 A TW107144481 A TW 107144481A TW 107144481 A TW107144481 A TW 107144481A TW I681087 B TWI681087 B TW I681087B
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TW
Taiwan
Prior art keywords
heater
single crystal
silicon single
gas
exhausted
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TW107144481A
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English (en)
Chinese (zh)
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TW201945602A (zh
Inventor
金原崇浩
片野智一
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日商Ｓｕｍｃｏ股份有限公司
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW107144481A 2018-04-27 2018-12-11 矽單結晶的製造方法及矽單結晶的提拉裝置 TWI681087B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018086795A JP6922831B2 (ja) 2018-04-27 2018-04-27 シリコン単結晶の製造方法およびシリコン単結晶の引き上げ装置
JP2018-086795 2018-04-27

Publications (2)

Publication Number Publication Date
TW201945602A TW201945602A (zh) 2019-12-01
TWI681087B true TWI681087B (zh) 2020-01-01

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ID=68358146

Family Applications (1)

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TW107144481A TWI681087B (zh) 2018-04-27 2018-12-11 矽單結晶的製造方法及矽單結晶的提拉裝置

Country Status (4)

Country Link
JP (1) JP6922831B2 (ko)
KR (1) KR102315982B1 (ko)
CN (1) CN110408991B (ko)
TW (1) TWI681087B (ko)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI281695B (en) * 2004-03-31 2007-05-21 Sumco Techxiv Corp Semiconductor single crystal manufacturing equipment and graphite crucible
CN100415945C (zh) * 2005-12-26 2008-09-03 北京有色金属研究总院 一种提高直拉硅单晶炉热场部件寿命的方法及单晶炉

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2631591B2 (ja) * 1991-10-29 1997-07-16 コマツ電子金属株式会社 半導体単結晶製造方法および製造装置
JP3750174B2 (ja) * 1996-01-24 2006-03-01 株式会社Ｓｕｍｃｏ 単結晶の製造装置および製造方法
JPH09227286A (ja) * 1996-02-24 1997-09-02 Komatsu Electron Metals Co Ltd 単結晶製造装置
JP3587229B2 (ja) * 1997-10-20 2004-11-10 三菱住友シリコン株式会社 シリコン単結晶の引上げ装置
KR20030055900A (ko) * 2001-12-27 2003-07-04 주식회사 실트론 단결정 잉곳의 제조장치
JP4730937B2 (ja) * 2004-12-13 2011-07-20 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体単結晶製造装置および製造方法
JP2009001489A (ja) 2008-08-28 2009-01-08 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶の製造装置及び製造方法
JP6257483B2 (ja) * 2014-09-05 2018-01-10 グローバルウェーハズ・ジャパン株式会社 シリコン単結晶製造方法
CN106757312A (zh) * 2017-03-09 2017-05-31 无锡市蓝德光电科技有限公司 一种硅单晶提拉炉

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI281695B (en) * 2004-03-31 2007-05-21 Sumco Techxiv Corp Semiconductor single crystal manufacturing equipment and graphite crucible
CN100415945C (zh) * 2005-12-26 2008-09-03 北京有色金属研究总院 一种提高直拉硅单晶炉热场部件寿命的方法及单晶炉

Also Published As

Publication number Publication date
KR20190125180A (ko) 2019-11-06
JP2019189506A (ja) 2019-10-31
CN110408991B (zh) 2022-03-29
JP6922831B2 (ja) 2021-08-18
KR102315982B1 (ko) 2021-10-21
TW201945602A (zh) 2019-12-01
CN110408991A (zh) 2019-11-05

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