TWI681087B - Method for manufacturing silicon single crystal and pulling device for silicon single crystal - Google Patents

Abstract

Problem to be solved： To provide a method for manufacturing silicon single crystal capable of efficiently exhausting gas containing CO and reducing carbon concentration in silicon single crystal. Solution： A method for manufacturing silicon single crystal which manufactures silicon single crystal by using a pulling device including a chamber, a quartz crucible 3A set up in the chamber, a heater 5, which is arranged to surround the quartz crucible 3A, heats the quartz crucible 3A, wherein the method exhausts the gas introduced into the pulling device during a pulling process from a central exhaust port 16A formed in the back of the heater.

Description

Method for manufacturing silicon single crystal and pulling device for silicon single crystal

The invention relates to a method for manufacturing silicon single crystal and a pulling device for silicon single crystal.

When used in semiconductor wafers, the high concentration of carbon in the silicon single crystal is the cause of semiconductor device defects. Therefore, it is known to reduce the carbon concentration in the crystal by controlling the pollution rate of CO mixed into the raw material melt from high-temperature carbon members such as furnace heaters and graphite crucibles, and the CO evaporation rate from the raw material melt. Furthermore, CO (gas) derived from the high-temperature carbon member is generated based on the following reaction formula (1). SiO(gas)+2C(solid)→CO(gas)+SiC(solid)…Formula (1)

Therefore, Patent Document 1 discloses a technique of discharging CO-containing gas existing in a quartz crucible from under the heater of the pulling device. In addition, Patent Document 2 discloses that an inert gas such as argon gas is introduced into the quartz crucible from above the pulling device, and the gas containing CO is directed above the upper end of the heater and below the lower end from the pulling Discharge technology under the device.

Advanced technical literature Patent Literature: Patent Document 1: Japanese Patent No. 4423805 Patent Document 2: Japanese Patent Laid-Open No. 05-3119976

[Problems to be solved by the invention]

However, the technology described in the aforementioned Patent Document 1 has a general exhaust structure. However, since it can only be exhausted from the lower part of the furnace, there is a problem that CO gas generated on the upper side of the furnace cannot be efficiently discharged. In addition, in the technology described in the aforementioned Patent Document 2, in the exhaust of one system, if a plurality of exhaust paths are provided in the hot zone, the exhaust near the device-side exhaust port becomes an advantage, so it is far away from the device-side exhaust port. The exhaust efficiency will decrease due to the impedance of the piping. Therefore, there is a problem that a sufficient effect cannot be obtained even if a plurality of exhaust ports are provided.

An object of the present invention is to provide a method for manufacturing a silicon single crystal and a silicon single crystal pulling device, which can efficiently exhaust a gas containing CO to reduce the carbon concentration in the silicon single crystal. [Means for solving the problem]

The method for producing a silicon single crystal of the present invention is to produce silicon using a pulling device provided with a chamber, a quartz crucible provided in the pre-commension chamber, and a heater arranged to surround the pre-quartz crucible to heat the pre-quartz quartz crucible. The method for manufacturing a single crystal silicon single crystal is characterized in that the gas introduced into the pull device of the previous note is exhausted from the back of the previous heater during the pull.

Here, the so-called back surface of the heater is an area where the heater is projected in the horizontal direction from the back surface of the heater toward the inner cylinder. As described above, a carbon member that becomes a high temperature such as a heater and SiO gas generated from a silicon melt undergo a reaction as shown in equation (1) to generate CO gas. As this CO gas is mixed into the silicon melt, the carbon concentration in the silicon single crystal increases. Basically, the higher the temperature of the carbon member, the easier it is to generate CO gas by the reaction of formula (1). As the heater with the highest temperature carbon component among the furnace components, it produces the most CO gas. Therefore, by evacuating from the back surface of the heater that becomes the generation site of CO gas, the CO gas can be exhausted in the shortest path, and thus the carbon concentration in the silicon single crystal can be reduced.

In the present invention, it is preferable that the exhaust port that exhausts air from the back of the heater is formed at a position overlapping at least a part of the back of the heater. According to this invention, if the exhaust port is formed at a position overlapping with at least a part of the back surface of the heater, the CO gas that has been generated from the inside of the upper part of the heater or the lower part of the heater can be exhausted, so that the silicon unit can be reduced The carbon concentration in the crystal.

In the present invention, this is preferable: the prescript heater includes a plurality of first heating sections extending in the up-down direction and arranged so as to provide a gap in the widthwise direction perpendicular to the up-down direction, and each of the plural first heating sections The second heating portion where the upper ends of the heaters and the lower ends of the heaters are alternately connected to each other are formed in a meandering shape, and an exhaust port that exhausts air from the back of the heater is formed at least on the back of the first heater Partly overlapping positions. According to this invention, if the exhaust port is formed at a position overlapping with at least a part of the back surface of the first heating section, CO gas can be exhausted from the gap between the first heating sections, so the silicon single crystal can be reliably reduced Carbon concentration.

In the present invention, it is preferable that the exhaust port that exhausts air from the back of the heater described above is formed in the second heating unit that connects the upper ends of the first heating unit described above and the lower end of the first heater that connects each other. Between the second heating section. According to this invention, the CO gas generated by the heater can be directly exhausted from the gap between the first heating portion 51 of the heater. Therefore, the CO gas generated by the heater 5 can be exhausted more reliably, and the carbon concentration in the silicon single crystal after pulling can be reduced.

In the present invention, it is preferable that the exhaust port that exhausts air from the back surface of the heater described above is formed at a position overlapping the back surface of the first heating portion described above. According to this invention, the CO gas can be surely exhausted from the slit-shaped gap arranged between the plurality of first heating portions in the width direction of the heater, so the CO gas can be discharged from the CO gas generation position in the shortest path Gas can more reliably reduce the carbon concentration in silicon single crystals.

In the present invention, the gas introduced into the pull-up device described above is further exhausted from above the upper end of the heater described above. In addition, in the present invention, the gas introduced into the pull-up device described above is exhausted further below the lower end of the heater described above. According to these inventions, even when the exhaust is only above the upper end of the heater or only below the lower end of the heater, by adding exhaust on the back side of the heater, CO can be reduced The gas is exhausted from near the CO gas generation site, so the carbon concentration in the silicon single crystal can be reduced.

In the present invention, it is preferable that the pre-draw device includes an exhaust pipe arranged outside the pre-heater, and the pre-exhaust pipe has a central exhaust port formed at a position corresponding to the back of the pre-heater. According to this invention, if the exhaust pipe is arranged outside the heater, the CO gas generated from the heater can be efficiently exhausted, so that the CO gas can be prevented from being mixed into the silicon melt and the carbon concentration in the silicon single crystal can be prevented Rising situation. In particular, if there are plural exhaust pipes, and each exhaust pipe is evenly arranged in the circumferential direction of the heater, the CO gas can be exhausted from an equal position in the circumferential direction of the heater. Therefore, the gas containing the carbon absorbed in the silicon single crystal can be exhausted equally around the crystal axis of the silicon single crystal. In addition, each exhaust pipe is equipped with a central exhaust port, which enables efficient exhaust and can further reduce the carbon concentration in the silicon single crystal.

The pulling device of the silicon single crystal of the present invention is characterized by comprising: a chamber; a quartz crucible provided in the prescript cavity; a heater configured to surround the prescript quartz crucible to heat the prescript quartz crucible; The gas introduced into the chamber of the epilogue is exhausted from the back of the heater of the epilogue.

In the present invention, it is preferable that the exhaust port that exhausts air from the back of the heater is formed at a position overlapping at least a part of the back of the heater. In the present invention, it is preferable that the pre-heater includes a plurality of first heating units each extending in the up-down direction and arranged in a widthwise direction perpendicular to the up-down direction, and each of the plurality of first heating units The second heating portion of the upper end of each other and the lower end of each are alternately connected to each other, which is formed in a meandering shape, and an exhaust port that exhausts air from the back of the previous heater is formed on at least a portion of the back of the first heating part Overlapping positions.

In the present invention, it is preferable that the exhaust port that exhausts air from the back of the heater described above is formed in the second heating unit that connects the upper ends of the first heating unit described above and the lower end of the first heater that connects each other. Between the second heating section. In the present invention, it is preferable that the exhaust port that exhausts air from the back surface of the heater described above is formed at a position overlapping the back surface of the first heating portion described above. In the present invention, this is preferable: it is provided with a heat shield body, which is provided above the quartz crucible in the foreword and shields the heat from the silicon melt in the quartz crucible in the foreword. With these inventions, it is possible to enjoy the same functions and effects as those described above.

[1] Structure of silicon single crystal lifting device 1 FIG. 1 is a schematic diagram showing an example of the structure of a lifting device 1 to which the method for manufacturing a silicon single crystal 10 according to an embodiment of the present invention can be applied. The pulling device 1 is a device for pulling a silicon single crystal 10 by Chuklaski method, and it includes a chamber 2 constituting an outer profile and a crucible 3 arranged at the center of the chamber 2. The crucible 3 is a double-layer structure composed of an inner quartz crucible 3A and an outer graphite crucible 3B, and it is fixed to the upper end of the support shaft 4 that can rotate and move up and down.

A resistance heating heater 5 surrounding the crucible 3 is provided on the outer side of the crucible 3, and a heat insulating material 6 serving as an outer cylinder along the inner surface of the chamber 2 is provided on the outer side thereof. Above the crucible 3, a pull shaft 7 such as a cable that rotates at a predetermined speed in a reverse direction or the same direction coaxially with the support shaft 4 is provided. A seed crystal 8 is attached to the lower end of the pulling shaft 7 here.

A cylindrical heat shield 12 is arranged in the chamber 2. The role of the heat shield body 12 is to block the high-temperature radiant heat from the silicon melt 9 in the crucible 3 and the heater 5 and the side wall of the crucible 3 for the silicon single crystal 10 being grown, and to solidify the interface as the crystal growth interface. In the vicinity of the liquid interface, thermal diffusion to the outside is suppressed, and the temperature gradient in the direction of the pulling axis of the central portion of the single crystal and the outer periphery of the single crystal is controlled. In addition, the heat shield 12 also has the function of a rectifying cylinder, which causes the evaporation part from the silicon melt 9 to be exhausted to the outside of the furnace by an inert gas introduced from above the furnace.

A gas inlet 13 for introducing an inert gas such as argon gas (hereinafter referred to as Ar gas) into the chamber 2 is provided in the upper portion of the chamber 2. An exhaust port 14 that sucks and discharges the gas in the chamber 2 by driving a vacuum pump (not shown) is provided in the lower portion of the chamber 2. The inert gas introduced into the chamber 2 from the gas inlet 13 descends between the silicon single crystal 10 and the heat shield 12 during the growth, and passes through the gap between the lower end of the heat shield 12 and the liquid surface of the silicon melt 9, It flows toward the outside of the heat shield 12 and then to the outside of the crucible 3, and then descends outside the crucible 3 through the exhaust pipe 15 from the central exhaust port 16A, which will be described later, and is discharged from the exhaust port 14.

When manufacturing the silicon single crystal 10 using such a pulling device 1, the polycrystalline silicon filled in the crucible 3 and the like are heated by the heater 5 while maintaining the inert gas environment in the chamber 2 under reduced pressure. The solid raw material melts to form a silicon melt 9. When the silicon melt 9 is formed in the crucible 3, the pulling shaft 7 is lowered so that the seed crystal 8 is immersed in the silicon melt 9 while slowly turning the crucible 3 and the pulling shaft 7 in a predetermined direction. The pulling shaft 7 is pulled, thereby cultivating the silicon single crystal 10 connected to the seed crystal 8.

[2] Structure of exhaust flow path 2 and 3 show the structure of the exhaust flow path formed in the aforementioned lifting device 1. Fig. 2 is a vertical sectional view, and Fig. 3 is a horizontal sectional view. As shown in FIG. 3, the exhaust pipe 15 is constituted by a long-shaped member having a U-shaped cross section, and the U-shaped flange of the exhaust pipe 15 is joined to the inner cylinder 16 disposed on the outer side of the heater 5. The exhaust pipe 15 is provided at four positions in the circumferential direction of the inner cylinder 16 outside the heater 5. The pair of exhaust pipes 15 and the other pair of exhaust pipes 15 facing each other are equally arranged so as to exhibit an angle of 90° in the plan view shown in FIG. 3.

The inner cylinder 16 is a cylindrical body made of carbon members such as graphite. As shown in FIG. 2, on the inner cylinder 16, a central exhaust port 16A is formed on the back of the heater 5. In addition, in this embodiment, four exhaust pipes 15 are provided, but it is not limited to this. It may be three or eight, as long as there are plural exhaust pipes 15.

As shown in FIG. 4, the heater 5 includes a first heating unit 51 and second heating units 52 and 53. The upper end of the first heating unit 51 is alternately connected by the second heating unit 52 and the second heating unit 53 makes the first 1 The lower end of the heating section is alternately connected to form a meander shape extending in the width direction. The first heating portion 51 is composed of a carbon rod-like body or a plate-like body that is an impedance heating body extending vertically, and a plurality of them are provided through a gap in a wide direction perpendicular to the vertical direction.

The second heating portion 52 is composed of a carbon rod-shaped body or a plate-shaped body extending in the horizontal direction, and connects every other upper end of the first heating portion 51 adjacent in the width direction. The second heating portion 53 is composed of a carbon rod-shaped body or a plate-shaped body extending in the horizontal direction, and connects every other lower end of the first heating portion 51 adjacent in the width direction. That is, the heater 5 arranges the first heating portion 51 across the gap in the width direction, connects the upper ends of the first heating portion 51 to each other with the second heating portion 52, and uses the second heating portion 53 in The lower end of the first heating portion 51 is connected to each other at a position different from the upper portion, thereby forming a meandering shape.

As shown in FIG. 4, the middle exhaust port 16A may be arranged within the range H2 of the height direction of the back surface of the heater 5. The range H2 is a range H0 in the height direction from the upper end of the second heating section 52 to the lower end of the second heating section 53 in the height direction of the heater 5, at least a part of the central exhaust port 16A Within the scope. If the middle exhaust port 16A is formed within the range H2 in the height direction, exhaust from at least the back of the heater 5 is possible. Therefore, the CO gas that has been generated in the heater 5 can be exhausted from the back surface of the heater 5, so the carbon concentration in the silicon single crystal 10 after pulling can be reduced.

More preferably, the central exhaust port 16A is arranged in the range H0 in the height direction from the upper end of the second heating portion 52 of the heater 5 to the lower end of the second heating portion 53. If the middle exhaust port 16A is formed in the range H0 in the height direction, the CO gas that has been generated in the heater 5 can be directly exhausted from the gap between the first heating portions 51 of the heater 5. Therefore, the CO gas that has been generated in the heater 5 can be exhausted more reliably, and the carbon concentration in the silicon single crystal 10 after pulling can be reduced.

Preferably, as shown in FIG. 4, the central exhaust port 16A is arranged in the height direction range H1 of the gap formed between the adjacent first heating portions 51. If the middle exhaust port 16A is formed in the range H1 in the height direction, the amount of exhaust gas from the gap formed between the first heating portions 51 of the heater 5 increases. Therefore, it is possible to directly exhaust the CO gas through the shortest path from the gap of the first heating portion 51 that becomes the highest temperature and the amount of generation of CO gas is increased, so that the carbon concentration in the silicon single crystal 10 can be more reliably reduced.

[3] Function and effect of the embodiment In this exhaust flow path, the inert gas introduced from the gas introduction port 13 (refer to FIG. 1) at the upper part of the quartz crucible 3A diffuses into the quartz crucible along the melt surface of the silicon melt 9 as shown in FIG. 3A outside. A part of the SiO gas on the surface of the silicon melt 9 flows along the inside of the heater 5, and another part of the gas flows between the quartz crucible 3A and the heater 5. At this time, the gas flowing between the quartz crucible 3A and the heater 5 reacts with the carbon material constituting the heater 5 through the inside of the heater 5 to generate CO gas. The generated CO gas is sucked from the exhaust port 16A formed in the middle of the back surface of the heater 5, flows through the exhaust pipe 15, and is discharged from the exhaust port 14 without being diffused to other parts.

Therefore, CO gas generated by the reaction of SiO gas and carbon is sucked in from the central exhaust port 16A, and then exhausted from the exhaust port 14 through the exhaust pipe 15, whereby the CO gas can be directly exhausted in the shortest path, so The carbon concentration in the silicon single crystal 10 pulled by the pulling device 1 can be reduced. In addition, since the CO gas can be exhausted from the gap between the plurality of first heating portions 51 arranged in the width direction of the heater 5, the CO gas can be exhausted from the CO gas generation position in the shortest path, and the silicon can be reduced. The carbon concentration in the single crystal 10.

The plural exhaust pipes 15 are arranged at equal positions around the heater 5, whereby the CO gas can be exhausted from the equal positions around the quartz crucible 3A. Therefore, the amount of carbon taken into the silicon single crystal 10 around the crystal axis of the silicon single crystal 10 can be made equal, so the carbon concentration of the silicon single crystal can be made uniform. In addition, since each exhaust pipe 15 includes a central exhaust port 16A, efficient exhaust can be performed, and the carbon concentration in the silicon single crystal 10 can be further reduced.

[4] Second embodiment Next, the second embodiment of the present invention will be described. In the following description, the same parts as those already explained are given the same symbols and their description is omitted. In the aforementioned first embodiment, a middle exhaust port 16A is formed in the central portion of the back surface of the one-stage heater 5 to exhaust the generated CO gas.

On the other hand, the difference in this embodiment is that, as shown in FIG. 5, two-stage heaters 5A and 5B are used, and a middle exhaust port 16A is formed at the center of the back of the upper heater 5A. A central exhaust port 16B is formed in the center of the back surface of the lower heater 5B, and CO gas is exhausted from each central exhaust port 16A, 16B. In addition, the number of heater segments is not limited to this, and when a heater with a number of segments of 2 or more is arranged, a middle exhaust port may be formed in the center of the back of each heater. With this embodiment like this, it is possible to enjoy the same operation and effect as the aforementioned first embodiment.

[5] Modification of the embodiment Furthermore, the present invention is not limited to the aforementioned embodiment, and includes the following modifications. In the aforementioned embodiment, only one central exhaust port 16A is formed on the inner tube 16 to which the exhaust pipe 15 is attached, but the present invention is not limited to this. That is, in addition to the central exhaust port 16A, an upper exhaust port for inhaling CO gas may be formed in the upper part of the heater 5, and a lower exhaust port for inhaling CO gas may be formed in the lower part of the heater 5.

In the foregoing embodiment, the heater 5 is a meander in the width direction of the heater 5, but the present invention is not limited to this. That is, the heater can also meander in the up and down direction. In short, as long as there is a slit-like gap between the heating bodies constituting the heater, the shape is not concerned. In addition, as long as the object of the present invention can be achieved, the specific structure and shape of the present invention may be other structures. [Example]

Next, an embodiment of the present invention will be described. Furthermore, the present invention is not limited to the following examples. [1] Real furnace test Using the actual lifting device 1 shown in FIG. 1, the exhaust pipe 15 is formed on the back of the heater 5, and the central exhaust port 16A is formed at a position halfway in the height direction of the heater 5 (implementation Example), and in the case where a lower exhaust port is formed below the lower end in the height direction of the heater 5 (Comparative Example), the carbon concentration in the silicon single crystal 10 after pulling is measured. The results are shown in Figure 6. Furthermore, the inner cylinder 16 and the exhaust pipe 15 in which the central exhaust port 16A is formed are formed of carbon materials such as graphite materials and carbon fiber reinforced composite materials.

From FIG. 6, it can be confirmed that when the example and the comparative example are compared, the comparative example has a tendency that the carbon concentration is higher than that of the example since the silicon single crystal 10 is pulled up. In addition, the comparative example has a higher curing rate, that is, as the silicon single crystal 10 is pulled up, it becomes higher than the carbon concentration of the example. In contrast to this, the carbon concentration in the silicon single crystal 10 of the embodiment is suppressed to be lower than in the case of the lower exhaust, and it can be confirmed that the exhaust efficiency of the CO gas caused by the central exhaust port 16A is good.

[2] Confirmed by simulation Next, using numerical simulation software, the carbon concentration in the silicon melt 9 at the exhaust position is estimated. Specifically, as shown in FIG. 7, for lower exhaust (A) only, intermediate exhaust (B), intermediate exhaust and lower exhaust (C), and intermediate exhaust and upper exhaust (D ), the carbon concentration in the silicon melt 9 is estimated. The results are shown in Figure 8. In the actual pulling, the carbon concentration in the silicon melt 9 is used as the initial concentration, and carbon is absorbed into the silicon single crystal 10 with segregation. Therefore, the calculated value based on the simulation can be regarded as corresponding to the actual silicon single crystal 10 carbon concentration.

As in the actual furnace test, only the lower exhaust (A), as shown in FIG. 8, has the highest carbon concentration in the silicon melt 9. In the case of only the intermediate exhaust (B), it can be confirmed that the carbon concentration in the silicon melt 9 is the lowest. In the case of the middle exhaust and the lower exhaust (C), it can be confirmed that although it is not as good as the middle exhaust (B) alone, the silicon is lower than that of the lower exhaust (A). The carbon concentration in the melt 9 is low.

Similarly, the intermediate exhaust gas and the upper exhaust gas (D) are compared with the lower exhaust gas (A) only, and it is confirmed that the carbon concentration in the silicon melt 9 is low. From the above, it can be seen that by combining the intermediate exhaust gas with the upper exhaust gas or the intermediate exhaust gas with the lower exhaust gas, the carbon concentration in the silicon single crystal 10 can be reduced. Furthermore, in the case of combining the upper exhaust gas or the lower exhaust gas with the intermediate exhaust gas, only the intermediate exhaust gas can reduce the carbon concentration in the silicon single crystal 10, which is presumed to be due to the upper exhaust gas and the lower exhaust gas. The existence of exhaust gas will reduce the exhaust efficiency of the intermediate exhaust gas.

1 2 Chambers Chambers 3 The Crucible Crucible 3A Quartz crucible 3B Graphite Crucible Graphite Crucible 4 Support axis Support axis 5, 5A, 5B heater 6 Insulation materials 7 ​ 8 crystallization of a kind of crystallization 9 The silicon melt solution 10 The single crystal of silicon 12 Thermal shielding body 13 Gas inlet port 14 Exhaust vents 15 Exhaust pipe 16 Inner tube Inner tube 16A, 16B Exhaust in the middle 51 The first heating section 52, 53 Second heating section H0, H1, H2 Height range

[Fig. 1] A schematic diagram showing the structure of a silicon single crystal pulling apparatus according to an embodiment of the present invention. [Fig. 2] A vertical sectional view showing the structure of the exhaust gas flow path in the foregoing embodiment. [Fig. 3] A horizontal sectional view showing the structure of the exhaust gas flow path in the foregoing embodiment. [Fig. 4] A schematic diagram showing the structure of the heater and the arrangement range of the central exhaust port in the foregoing embodiment. [Fig. 5] A vertical sectional view showing the structure of an exhaust gas flow path in a second embodiment of the present invention. [Fig. 6] A graph showing changes in carbon concentration in silicon single crystals in Examples and Comparative Examples. [Fig. 7] A vertical cross-sectional view showing the position of the exhaust port by simulation. [Fig. 8] A graph showing the simulation results at each exhaust port position.

3 Crucible 3A Quartz crucible 3B Graphite crucible 5 Heater 6 Insulation materials 9 Silicon melt solution 12 Thermal shielding body 14 Exhaust vents 15 Exhaust pipe 16 Inner tube 16A Exhaust in the middle

Claims (11)

A method for manufacturing a silicon single crystal, which uses a quartz crucible provided with a chamber, a quartz crucible provided in the prescript cavity, and a pulling device configured to surround the prescript quartz crucible to heat the prescript quartz crucible to produce the silicon single crystal The manufacturing method of the silicon single crystal is characterized in that the gas introduced into the pull device of the previous note is exhausted from the back of the previous heater during the pulling, and the exhaust port is exhausted from the back of the previous heater. At a position that overlaps at least a part of the back of the heater in the previous note. The method for manufacturing a silicon single crystal as described in item 1 of the patent application range is characterized in that the heater described above includes a plurality of heaters extending in the up-down direction and arranged as a plurality of spaces separated by a gap in a wide direction perpendicular to the up-down direction 1. A heating unit, and a second heating unit that alternately connects the upper ends of the plural first heating units to each other and the lower end of each of the heating units, is formed in a meandering shape, and is exhausted from the back of the heater The mouth is formed at a position overlapping at least a part of the back surface of the first heating portion described above. The method for manufacturing a silicon single crystal as described in item 2 of the patent application range is characterized in that an exhaust port for exhausting gas from the back of the heater described above is formed in the second heater connecting the upper ends of the first heating part described above to each other And the second heating unit that connects the lower ends of the first heating unit described above to each other. The method for manufacturing a silicon single crystal as described in item 3 of the patent application range is characterized in that an exhaust port for exhausting gas from the back surface of the heater described above is formed at a position overlapping the back surface of the first heating portion described above. The method for manufacturing a silicon single crystal as described in any one of the items 1 to 4 of the patent application range is characterized in that the gas introduced into the pull-up device is exhausted from above the upper end of the heater . The method for manufacturing a silicon single crystal as described in any one of the items 1 to 4 of the patent application range is characterized in that the gas introduced into the pull-up device described above is exhausted further below the lower end of the heater described above . A pulling device for silicon single crystals, characterized in that it includes: a chamber; a quartz crucible set in the chamber of the prescript; a heater configured to surround the quartz crucible of the prescript to heat the quartz crucible; the preface will be introduced in the pulling The gas outlet in the chamber is exhausted from the back of the heater, and the exhaust outlet exhausted from the back of the heater is formed at a position overlapping at least a part of the back of the heater. The silicon single crystal pulling device as described in item 7 of the patent application range is characterized in that the pre-heater includes a plurality of heaters extending in the up-down direction and arranged in a wide direction perpendicular to the up-down direction with a gap in the width direction 1. A heating unit, and a second heating unit that alternately connects the upper ends of the plural first heating units to each other and the lower ends of the respective heating units, is formed in a meandering shape, and is exhausted from the back of the heater The mouth is formed at a position overlapping at least a part of the back surface of the first heating portion described above. The silicon single crystal pulling device as described in item 8 of the patent scope is characterized by: An exhaust port that exhausts air from the back of the heater described above is formed between a second heating unit that connects the upper ends of the first heating unit described above and a second heating unit that connects the lower ends of the first heating unit described above. The silicon single crystal pulling apparatus described in item 9 of the patent application range is characterized in that the exhaust port for exhausting air from the back surface of the heater described above is formed at a position overlapping the back surface of the first heating portion described above. The silicon single crystal pulling device as described in any one of items 7 to 10 of the patent application range is characterized in that it is provided with a heat shield, which is arranged above the quartz crucible in the preceding note and shields the quartz crucible from the previous note The heat of the silicon melt.

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