WO2000070662A1 - Dispositif pour former un depot d'un film - Google Patents

Dispositif pour former un depot d'un film Download PDF

Info

Publication number
WO2000070662A1
WO2000070662A1 PCT/JP2000/003165 JP0003165W WO0070662A1 WO 2000070662 A1 WO2000070662 A1 WO 2000070662A1 JP 0003165 W JP0003165 W JP 0003165W WO 0070662 A1 WO0070662 A1 WO 0070662A1
Authority
WO
WIPO (PCT)
Prior art keywords
processing chamber
gas supply
reaction gas
wafer
gas
Prior art date
Application number
PCT/JP2000/003165
Other languages
English (en)
Japanese (ja)
Inventor
Youji Takagi
Seiji Arima
Original Assignee
Applied Materials Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc. filed Critical Applied Materials Inc.
Publication of WO2000070662A1 publication Critical patent/WO2000070662A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Definitions

  • the present invention relates to a film forming apparatus such as an epitaxial growth apparatus.
  • a conventional single-wafer epitaxy growth apparatus for example, an apparatus in which a plurality of halogen lamps are arranged radially above and below a processing chamber made of quartz glass can be cited.
  • This processing chamber has a gas supply port and a gas exhaust port, and a susceptor for supporting a semiconductor wafer is provided inside.
  • a wafer is placed on a susceptor, a halogen lamp is turned on to heat the wafer, and a reaction gas is supplied from a gas supply port into the processing chamber.
  • This reaction gas flows in a laminar state along the surface of the wafer heated to a predetermined temperature. At this time, a thermal decomposition reaction of the reaction gas occurs, and a thin film is formed on the wafer surface. Disclosure of the invention
  • the film thickness distribution of a thin film formed on a wafer surface tends to be non-uniform. This is thought to be caused by various factors such as the location of the halogen lamp and the flow rate of the reaction gas.
  • a plurality of gas supply ports are provided in the processing chamber, and the flow rate ratio of the reaction gas introduced into the processing chamber from each gas supply port is adjusted to control the film thickness distribution of the thin film formed on the wafer surface. Attempts have been made to improve.
  • an object of the present invention is to provide a film forming apparatus capable of improving the uniformity of the film thickness distribution of a thin film formed on a wafer surface. I do.
  • the present invention provides a method in which a reaction gas supplied into a processing chamber is circulated along a surface of an object to be processed, and a film is formed by a thermal decomposition reaction of the reaction gas.
  • the present invention provides a film forming apparatus provided with a guide unit for guiding a reaction gas supplied into a processing chamber to a surface of an object to be processed.
  • the film forming apparatus performs the film formation by introducing a reaction gas into the processing chamber, flowing the gas along the surface of the object to be processed, and causing a thermal decomposition reaction.
  • a guide section (means) for guiding the reaction gas introduced into the substrate to the surface of the object to be processed is provided.
  • the film forming apparatus having such a configuration, it is possible to control the flowing direction of the reaction gas by providing the guide portion. Therefore, it is possible to adjust the reaction gas to flow toward a region where the thickness of the thin film tends to be insufficient on the surface of the object to be processed such as a wafer. As a result, the thickness uniformity of the thin film formed on the surface of the object can be sufficiently improved.
  • the present invention provides a processing chamber having a gas supply port into which a reaction gas is introduced, and a wafer installed in the processing chamber and having a mounting portion on which an object to be processed is placed.
  • a support portion, and a guide portion extending from the gas supply port toward the mounting portion, and guiding the reaction gas supplied into the processing chamber through the gas supply port to the surface of the workpiece.
  • a film forming apparatus includes a processing chamber having a gas supply port, and a wafer support unit provided in the processing chamber and having a mounting unit on which an object to be processed is placed. Introduced into the processing chamber through the mouth and along the surface of the workpiece PT / 1 flows to generate a thermal decomposition reaction to form a film. The reaction gas introduced into the processing chamber extends from the gas supply port to the mounting part, and the reaction gas is introduced into the processing chamber. And a guide portion for guiding the vehicle.
  • the flow direction (flow direction) of the reaction gas can be controlled at a position close to a region where the thermal decomposition reaction is performed (hereinafter, referred to as a “reaction region”). Therefore, the flow of the reaction gas can be precisely adjusted. Therefore, the uniformity of the film thickness distribution of the thin film formed on the surface of the object to be processed such as a wafer can be sufficiently improved.
  • the reaction gas diffuses from a position close to the reaction region, when the processing chamber has a plurality of gas supply ports, the reaction gases introduced from each gas supply port are connected to the reaction region. Will be mixed at a position away from This makes it easier to control the flow of the reaction gas, and by adjusting the flow of the reaction gas toward the region where the thickness of the thin film tends to be insufficient on the wafer surface, the thin film on the object to be processed is adjusted.
  • the film thickness uniformity can be further improved.
  • the apparatus further includes a heating unit disposed outside the wafer support unit or the mounting unit in the processing champ and below the guide unit, and heating a reaction gas supplied into the processing chamber through a gas supply port. It is desirable.
  • a heating unit for heating the reaction gas introduced from the gas supply port is provided outside the wafer support unit in the processing chamber. It is preferable that a guide part is provided on the upper part or the upper part.
  • FIG. 1 is a schematic sectional view schematically showing a preferred embodiment of a film forming apparatus according to the present invention, and schematically shows an example of an epitaxy growth apparatus as a film forming apparatus according to the present invention.
  • FIG. 2 is a horizontal sectional view showing a structure of a main part of a preferred embodiment of a film forming apparatus according to the present invention, and shows a cross section taken along line II-II of FIG.
  • FIG. 3 is a horizontal sectional view schematically showing an example of a conventional epitaxial growth apparatus.
  • FIG. 4A is a schematic cross-sectional view showing an example of a film thickness distribution of a thin film formed on the surface of a wafer using a conventional epitaxial growth apparatus.
  • FIG. 4B is a schematic sectional view of the present invention shown in FIG.
  • FIG. 2 is a schematic cross-sectional view showing an example of a film thickness distribution of a thin film formed on a wafer surface using an epitaxial growth apparatus, both showing cross sections in the diameter direction of the wafer.
  • FIG. 1 is a schematic cross-sectional view schematically showing a preferred embodiment of a film forming apparatus according to the present invention.
  • a silicon wafer as an object to be processed is formed one by one.
  • 1 schematically illustrates an example of a single-wafer type epitaxial growth apparatus.
  • FIG. 2 is a horizontal cross-sectional view showing a structure of a main part of the epitaxial growth apparatus, and shows a cross section taken along line II-II of FIG.
  • an epitaxial growth apparatus 1 includes a processing chamber 2 made of quartz glass.
  • a plurality of (five in this case) gas supply ports 3a to 3e and a gas exhaust port 4 are provided in a part 2a of the liner constituting a part of the side part of the processing chamber 2. ing.
  • a gas supply pipe 5a is connected to a gas supply port 3c arranged at the center thereof.
  • the gas supply pipes 5b are connected to the gas supply ports 3b and 3d located at.
  • a gas supply pipe 5c is connected to the gas supply ports 3a and 3e located outside the gas supply ports 3b and 3d in the horizontal direction.
  • a gas exhaust duct 6 is connected to the gas exhaust port 4.
  • a susceptor 7 is provided as a wafer support for supporting the wafer W (workpiece).
  • the susceptor 7 has a disk shape made of a graphite material coated with silicon carbide, and has a concave mounting portion 7a on which the wafer W is mounted on the upper surface.
  • the susceptor 7 is horizontally supported at three points from the back side by a quartz glass support shaft 8 erected below the processing chamber 2.
  • the support shaft 8 is driven to rotate by a drive motor (not shown), whereby the susceptor 7 is rotated.
  • a preheating ring 9 (heating section) for heating the reaction gas G is provided between the liner part 2a and the susceptor 7.
  • the preheating ring 9 heats the reaction gas G introduced into each of the gas supply ports 3 a to 3 e and supplied into the processing chamber 2, and has an effect on the wafer W supported on the mounting portion 7 a. Thermal decomposition reaction takes place.
  • the preheating ring 9 At the top of the preheating ring 9, there are six guide plates 1 extending from the tips of the plurality of side walls 10 forming the gas supply ports 3 a to 3 e to the mounting portion 7 a side of the susceptor 7. 1 a to 1 If (guide section) are arranged side by side in the horizontal direction. That is, the preheating ring 9 is arranged outside the susceptor 7 in the processing chamber 2 and below the guide plates 1 la to 11 f.
  • These guide plates 11a to 11f rectify the reaction gas supplied from the respective gas supply ports 3a to 3e into the processing channel 2, and the wafer W placed on the receiver 7a It leads to a defined area on the surface. Further, out of the guide plates 11 a to l 1 f, the outermost guide plates 11 a and 1 If have a substantially rectangular parallelepiped shape and have a shape corresponding to the corresponding side wall 10. O, so that the longitudinal direction substantially matches the direction in which the side wall 10 extends o
  • the guide plates 1 lb to 1 e have a horizontal cross-section tapered and are slightly inclined outward with respect to the corresponding side wall 10. It is located so that it becomes thicker on the evening 7 side. As a result, the horizontal space between adjacent guide plates is gradually reduced toward the susceptor side.
  • halogen lamps infrared lamps or far-infrared lamps
  • 1 2 are arranged radially.
  • the power of the halogen lamp 12 is increased to set the wafer W at a predetermined processing temperature. Heat until Then, in state-like rotating the susceptor evening 7, the reaction gas G, such as a halogenated silane such as trichlorosilane (S i HC 1 3) Gasuya dichlorosilane (S i H 2 C 1 2 ), a gas supply pipe 5 The gas is supplied from a to 5c into the processing chamber 2 through the respective gas supply ports 3a to 3e.
  • a halogenated silane such as trichlorosilane (S i HC 1 3) Gasuya dichlorosilane (S i H 2 C 1 2 )
  • the reaction gas G heated by the preheating ring 9 is heated to a predetermined temperature.
  • FIG. 3 is a horizontal cross-sectional view schematically showing an example of a conventional shrimp / external growth apparatus.
  • the conventional epitaxial growth apparatus 100 does not include the guide plates 1 la to 1 If installed in the epitaxial growth apparatus 1 according to the present invention.
  • Other configurations of the epitaxy growth apparatus 100 are the same as those of the epitaxy growth apparatus 1.
  • the halogen lamp 12 In order to improve the film thickness distribution of the thin film, which tends to be non-uniform due to factors such as the installation position and the flow rate of the reaction gas, the flow rate of the reaction gas G supplied into the processing chamber 2 from each of the gas supply ports 3a to 3e By adjusting the ratio, there is a tendency that the film formation process of wafer W is performed.
  • FIGS. 4A and 4B are schematic diagrams each showing an example of a film thickness distribution of a thin film formed on a wafer surface using a conventional epitaxial growth apparatus 100 and an epitaxial growth apparatus 1 according to the present invention. It is sectional drawing, and both show the cross section in the diameter direction of a wafer.
  • the thickness distribution of the thin film M formed on the surface of the wafer W is excessive in the inner region Ra and the outer region Rb of the W, and the inner region R In the middle region Rc between a and the outer region Rb, the thin film tends to be insufficient.
  • the flow rate of the reactant gas G supplied to the gas supply ports 3b and 3d of the epitaxial growth apparatus 100 is adjusted to the flow rate of the reactant gas supplied to the gas supply ports 3a, 3c and 3e.
  • a method of increasing the amount was adopted. This is intended to suppress the formation of a thin film in the inner region R a and the outer region R b and promote the formation of a thin film in the intermediate region R c.
  • each reaction gas blown out from the gas supply pipes 5a to 5c to the gas supply ports 3a to 3e is diffused from the gas supply ports 3a to 3e (tip). Tended to be.
  • the reaction gases G from the adjacent gas outlets mix with each other in the reaction region.
  • thin film formation was most promoted in the mixed region of the reaction gas G on the wafer W, and it was difficult to improve the huge distribution of the thin film M as shown in FIG. 4A.
  • reaction gases G supplied from the respective gas supply ports 3a to 3e are mixed with each other at a position away from the reaction region as shown in FIG. Therefore, the gas supply port
  • the inner region Ra of W By making the flow rate of the reaction gas G supplied to 3b, 3d larger than the flow rate of the reaction gas supplied to the gas supply ports 3a, 3c, 3e, the inner region Ra of W The formation of a thin film in the region Rb can be reliably suppressed.
  • the present invention is not limited to the above embodiment.
  • the guide plates 11 a to 11 e are configured to extend to the preheating ring 9, but the guide plates 11 a to 11 e extend to a position just before the mounting portion 7 a in the susceptor 7. Even if it is configured so that the same effect as described above is obtained, it is preferable.
  • the spacing between adjacent guide plates is made narrower than the susceptor 7 side, but the spacing may be constant.
  • the shape, dimensions, mounting orientation, number of installations, and the like of such guide plates can be appropriately set according to the film thickness distribution characteristics of the thin film M formed on the surface of the wafer W.
  • the film forming apparatus of the above embodiment is an epitaxial growth apparatus 1 having a preheating ring 9, but the present invention provides an epitaxy growth apparatus without the preheating ring 9, or
  • the present invention can be applied to a film forming apparatus other than an epitaxial growth apparatus such as a CVD apparatus.
  • a guide portion for guiding a reaction gas supplied into a processing chamber to a surface of an object to be processed such as a wafer is provided. Since the direction in which the gas flows can be controlled, the uniformity of the film thickness distribution of the thin film formed on the surface of the object to be processed can be improved.

Abstract

L'invention concerne un dispositif de croissance épitaxiale (1) comprenant une chambre de traitement (2) munie d'un suscepteur (7), sur lequel reposent une plaquette (W) et un revêtement (2a) qui présente des orifices d'alimentation en gaz (3a-3e) et un orifice d'évacuation de gaz (4), opposé à ces orifices d'alimentation. Une bague de préchauffage (9) est en outre ménagée entre le revêtement (2a) et le suscepteur (7), des plaques de guidage (11a-11f) s'étendant en parallèle jusqu'au niveau (7a) dudit suscepteur (7), depuis les extrémités d'une pluralité de parois latérales (10) qui forment les orifices d'alimentation en gaz (3a-3e). Les plaques de guidage (11a-11f) sont destinées à rectifier un flux de gaz réactif (G) introduit dans ladite chambre de traitement (2), et à diriger ce flux vers une zone prédéfinie sur la surface de la plaquette (W).
PCT/JP2000/003165 1999-05-17 2000-05-17 Dispositif pour former un depot d'un film WO2000070662A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11/136067 1999-05-17
JP11136067A JP2000331939A (ja) 1999-05-17 1999-05-17 成膜装置

Publications (1)

Publication Number Publication Date
WO2000070662A1 true WO2000070662A1 (fr) 2000-11-23

Family

ID=15166451

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2000/003165 WO2000070662A1 (fr) 1999-05-17 2000-05-17 Dispositif pour former un depot d'un film

Country Status (3)

Country Link
JP (1) JP2000331939A (fr)
TW (1) TW457559B (fr)
WO (1) WO2000070662A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180269083A1 (en) * 2017-03-17 2018-09-20 Applied Materials, Inc. Finned rotor cover

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3516654B2 (ja) * 2000-12-27 2004-04-05 信越半導体株式会社 気相成長装置及びエピタキシャルウェーハの製造方法
JP4588894B2 (ja) * 2001-01-31 2010-12-01 信越半導体株式会社 気相成長装置及びエピタキシャルウェーハの製造方法
JP4655395B2 (ja) * 2001-03-23 2011-03-23 東京エレクトロン株式会社 熱処理装置及びその方法
JP2005183511A (ja) * 2003-12-17 2005-07-07 Shin Etsu Handotai Co Ltd 気相成長装置およびエピタキシャルウェーハの製造方法
JP4379585B2 (ja) 2003-12-17 2009-12-09 信越半導体株式会社 気相成長装置およびエピタキシャルウェーハの製造方法
JP4655801B2 (ja) * 2005-07-22 2011-03-23 株式会社Ｓｕｍｃｏ エピタキシャル成長装置及びエピタキシャルウェーハ製造方法
JP5109376B2 (ja) 2007-01-22 2012-12-26 東京エレクトロン株式会社 加熱装置、加熱方法及び記憶媒体
TWI590308B (zh) * 2010-07-29 2017-07-01 羅倫斯先進半導體科技公司 基板處理設備、系統及方法
DE112013002823T5 (de) * 2012-06-07 2015-03-19 Soitec Gaseinspritzkomponenten für Abscheidungssysteme, Abscheidungssysteme mit derartigen Komponenten und dazugehörige Verfahren
US20140137801A1 (en) * 2012-10-26 2014-05-22 Applied Materials, Inc. Epitaxial chamber with customizable flow injection
US9493874B2 (en) * 2012-11-15 2016-11-15 Cypress Semiconductor Corporation Distribution of gas over a semiconductor wafer in batch processing
US9632411B2 (en) * 2013-03-14 2017-04-25 Applied Materials, Inc. Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor
US20140272684A1 (en) 2013-03-12 2014-09-18 Applied Materials, Inc. Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor
JP5602903B2 (ja) 2013-03-14 2014-10-08 アプライド マテリアルズ インコーポレイテッド エピタキシャル成長による成膜方法、および、エピタキシャル成長装置
JP5386046B1 (ja) 2013-03-27 2014-01-15 エピクルー株式会社 サセプタ支持部およびこのサセプタ支持部を備えるエピタキシャル成長装置
TWI648427B (zh) * 2013-07-17 2019-01-21 應用材料股份有限公司 用於交叉流動類型的熱ｃｖｄ腔室之改良的氣體活化的結構
KR101487411B1 (ko) 2013-09-02 2015-01-29 주식회사 엘지실트론 라이너 및 이를 포함하는 에피텍셜 반응기
KR101874184B1 (ko) * 2016-07-26 2018-07-03 에스케이실트론 주식회사 에피택셜 웨이퍼 제조 장치
US10446420B2 (en) * 2016-08-19 2019-10-15 Applied Materials, Inc. Upper cone for epitaxy chamber
TWI634631B (zh) * 2017-06-30 2018-09-01 台灣積體電路製造股份有限公司 加熱裝置
US20220205134A1 (en) * 2020-12-31 2022-06-30 Globalwafers Co., Ltd. Systems and methods for a preheat ring in a semiconductor wafer reactor
CN113337810B (zh) * 2021-05-26 2022-04-22 北京北方华创微电子装备有限公司 内衬装置及半导体加工设备

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5811781A (ja) * 1981-07-15 1983-01-22 Nippon Denso Co Ltd プラズマｃｖｄ装置
JPH01315130A (ja) * 1988-03-28 1989-12-20 Toshiba Corp 気相成長装置
JPH05190465A (ja) * 1992-01-17 1993-07-30 Sharp Corp 光励起気相成長装置
JPH06232049A (ja) * 1993-01-29 1994-08-19 Komatsu Electron Metals Co Ltd 半導体製造装置
JPH07193015A (ja) * 1993-07-30 1995-07-28 Applied Materials Inc ウェハ処理チャンバ用ガス入口
EP0675524A1 (fr) * 1994-03-31 1995-10-04 Applied Materials, Inc. Chambre de traitement de substrats semi-conducteurs avec revêtement dorsal de suscepteur
JPH09260230A (ja) * 1996-03-22 1997-10-03 Toshiba Corp 半導体装置の製造装置および製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5811781A (ja) * 1981-07-15 1983-01-22 Nippon Denso Co Ltd プラズマｃｖｄ装置
JPH01315130A (ja) * 1988-03-28 1989-12-20 Toshiba Corp 気相成長装置
JPH05190465A (ja) * 1992-01-17 1993-07-30 Sharp Corp 光励起気相成長装置
JPH06232049A (ja) * 1993-01-29 1994-08-19 Komatsu Electron Metals Co Ltd 半導体製造装置
JPH07193015A (ja) * 1993-07-30 1995-07-28 Applied Materials Inc ウェハ処理チャンバ用ガス入口
EP0675524A1 (fr) * 1994-03-31 1995-10-04 Applied Materials, Inc. Chambre de traitement de substrats semi-conducteurs avec revêtement dorsal de suscepteur
JPH09260230A (ja) * 1996-03-22 1997-10-03 Toshiba Corp 半導体装置の製造装置および製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180269083A1 (en) * 2017-03-17 2018-09-20 Applied Materials, Inc. Finned rotor cover
US11004704B2 (en) * 2017-03-17 2021-05-11 Applied Materials, Inc. Finned rotor cover

Also Published As

Publication number Publication date
JP2000331939A (ja) 2000-11-30
TW457559B (en) 2001-10-01

Similar Documents

Publication Publication Date Title
WO2000070662A1 (fr) Dispositif pour former un depot d'un film
JP4108748B2 (ja) コールドウォール気相成長法
JP5189294B2 (ja) オートドーピングおよび裏面堆積を減少させるための基板支持システム
CN107523860B (zh) 使用外延生长的膜形成方法及外延生长装置
JP3696632B2 (ja) ウェハ処理チャンバ用ガス入口
JP6836328B2 (ja) エピタキシャル成長装置用のチャンバ構成要素
TWI404819B (zh) 成膜裝置及成膜方法
US20080092812A1 (en) Methods and Apparatuses for Depositing Uniform Layers
EP3456860A2 (fr) Appareil de croissance épitaxiale
US7700054B2 (en) Substrate processing apparatus having gas side flow via gas inlet
JPH06318551A (ja) 薄膜の形成方法およびその装置
US8257499B2 (en) Vapor phase deposition apparatus and vapor phase deposition method
US7060944B2 (en) Heat treatment device and heat treatment method
TW202043526A (zh) 用於較佳的晶圓均勻性的不對稱的注射
TWI754765B (zh) 用於磊晶沉積製程之注入組件
CN113287188B (zh) 气相生长装置
JP4443689B2 (ja) 成膜方法及び成膜装置
JPS62263629A (ja) 気相成長装置
JP2011151118A (ja) 半導体製造装置および半導体製造方法
JP2001044125A (ja) エピタキシャル成長装置及び方法
JP4655801B2 (ja) エピタキシャル成長装置及びエピタキシャルウェーハ製造方法
JP7376693B2 (ja) 処理システムおよび反応体ガスを供給する方法
JPS59159980A (ja) 気相成長装置
JP2004134625A (ja) 半導体装置の製造方法と製造装置
JP2000349030A (ja) 気相反応装置

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): KR US

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 09980583

Country of ref document: US

122 Ep: pct application non-entry in european phase