JP2000331939A - 成膜装置 - Google Patents

成膜装置

Info

Publication number
JP2000331939A
JP2000331939A JP11136067A JP13606799A JP2000331939A JP 2000331939 A JP2000331939 A JP 2000331939A JP 11136067 A JP11136067 A JP 11136067A JP 13606799 A JP13606799 A JP 13606799A JP 2000331939 A JP2000331939 A JP 2000331939A
Authority
JP
Japan
Prior art keywords
wafer
gas
gas supply
processing chamber
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP11136067A
Other languages
English (en)
Japanese (ja)
Inventor
Yoji Takagi
庸司 高木
Yasuji Arima
靖二 有馬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to JP11136067A priority Critical patent/JP2000331939A/ja
Priority to TW89109497A priority patent/TW457559B/zh
Priority to PCT/JP2000/003165 priority patent/WO2000070662A1/fr
Publication of JP2000331939A publication Critical patent/JP2000331939A/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
JP11136067A 1999-05-17 1999-05-17 成膜装置 Withdrawn JP2000331939A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP11136067A JP2000331939A (ja) 1999-05-17 1999-05-17 成膜装置
TW89109497A TW457559B (en) 1999-05-17 2000-05-17 Film-forming device
PCT/JP2000/003165 WO2000070662A1 (fr) 1999-05-17 2000-05-17 Dispositif pour former un depot d'un film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11136067A JP2000331939A (ja) 1999-05-17 1999-05-17 成膜装置

Publications (1)

Publication Number Publication Date
JP2000331939A true JP2000331939A (ja) 2000-11-30

Family

ID=15166451

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11136067A Withdrawn JP2000331939A (ja) 1999-05-17 1999-05-17 成膜装置

Country Status (3)

Country Link
JP (1) JP2000331939A (fr)
TW (1) TW457559B (fr)
WO (1) WO2000070662A1 (fr)

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002198316A (ja) * 2000-12-27 2002-07-12 Shin Etsu Handotai Co Ltd 気相成長装置及びエピタキシャルウェーハの製造方法
JP2002231641A (ja) * 2001-01-31 2002-08-16 Shin Etsu Handotai Co Ltd 気相成長装置及びエピタキシャルウェーハの製造方法
JP2002289597A (ja) * 2001-03-23 2002-10-04 Tokyo Electron Ltd 熱処理装置及びその方法
WO2005059981A1 (fr) * 2003-12-17 2005-06-30 Shin-Etsu Handotai Co., Ltd. Dispositif de croissance en phase vapeur et procede de production de tranche epitaxiale
WO2005059980A1 (fr) * 2003-12-17 2005-06-30 Shin-Etsu Handotai Co., Ltd. Dispositif de croissance en phase vapeur et procede de production de tranche epitaxiale
JP2007035720A (ja) * 2005-07-22 2007-02-08 Sumco Corp エピタキシャル成長装置及びエピタキシャルウェーハ製造方法
US7992318B2 (en) * 2007-01-22 2011-08-09 Tokyo Electron Limited Heating apparatus, heating method, and computer readable storage medium
JP2013533641A (ja) * 2010-07-29 2013-08-22 ローレンス アドヴァンスド セミコンダクター テクノロジーズ，エルエルシー 基板処理装置およびシステム
US20140134332A1 (en) * 2012-11-15 2014-05-15 Spansion Llc Distribution of Gas Over A Semiconductor Water in Batch Processing
WO2014151867A1 (fr) * 2013-03-14 2014-09-25 Applied Materials, Inc. Procédé de formation de film au moyen d'une croissance épitaxiale et appareil de croissance épitaxiale
WO2015009784A1 (fr) * 2013-07-17 2015-01-22 Applied Materials, Inc. Structure d'activation améliorée de gaz pour chambre à cvd thermique à écoulements croisés
KR101487411B1 (ko) 2013-09-02 2015-01-29 주식회사 엘지실트론 라이너 및 이를 포함하는 에피텍셜 반응기
US20150099065A1 (en) * 2012-06-07 2015-04-09 Soitec Gas injection components for deposition systems, deposition systems including such components, and related methods
KR20150074165A (ko) * 2012-10-26 2015-07-01 어플라이드 머티어리얼스, 인코포레이티드 커스터마이즈 가능한 유동 주입을 구비하는 에피택셜 챔버
US9096949B2 (en) 2013-03-27 2015-08-04 Applied Materials, Inc. Susceptor support portion and epitaxial growth apparatus including susceptor support portion
JP2016517633A (ja) * 2013-03-14 2016-06-16 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 蒸着で堆積されたフォトレジスト、及びそのための製造及びリソグラフィシステム
KR20180012151A (ko) * 2016-07-26 2018-02-05 에스케이실트론 주식회사 에피택셜 웨이퍼 제조 장치
CN107761074A (zh) * 2016-08-19 2018-03-06 应用材料公司 用于外延腔室的上部锥体
KR20180106964A (ko) * 2017-03-17 2018-10-01 어플라이드 머티어리얼스, 인코포레이티드 핀을 가진 회전자 커버
US10788744B2 (en) 2013-03-12 2020-09-29 Applied Materials, Inc. Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor
CN113337810A (zh) * 2021-05-26 2021-09-03 北京北方华创微电子装备有限公司 内衬装置及半导体加工设备
US20220205134A1 (en) * 2020-12-31 2022-06-30 Globalwafers Co., Ltd. Systems and methods for a preheat ring in a semiconductor wafer reactor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI634631B (zh) * 2017-06-30 2018-09-01 台灣積體電路製造股份有限公司 加熱裝置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5811781A (ja) * 1981-07-15 1983-01-22 Nippon Denso Co Ltd プラズマｃｖｄ装置
JPH01315130A (ja) * 1988-03-28 1989-12-20 Toshiba Corp 気相成長装置
JP2765685B2 (ja) * 1992-01-17 1998-06-18 シャープ株式会社 光励起気相成長装置
JPH06232049A (ja) * 1993-01-29 1994-08-19 Komatsu Electron Metals Co Ltd 半導体製造装置
DE69433656T2 (de) * 1993-07-30 2005-02-17 Applied Materials, Inc., Santa Clara Verfahren zum Einleiten reaktiven Gases in eine Substratbearbeitungsvorrichtung
US5551982A (en) * 1994-03-31 1996-09-03 Applied Materials, Inc. Semiconductor wafer process chamber with susceptor back coating
JPH09260230A (ja) * 1996-03-22 1997-10-03 Toshiba Corp 半導体装置の製造装置および製造方法

Cited By (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002198316A (ja) * 2000-12-27 2002-07-12 Shin Etsu Handotai Co Ltd 気相成長装置及びエピタキシャルウェーハの製造方法
JP4588894B2 (ja) * 2001-01-31 2010-12-01 信越半導体株式会社 気相成長装置及びエピタキシャルウェーハの製造方法
JP2002231641A (ja) * 2001-01-31 2002-08-16 Shin Etsu Handotai Co Ltd 気相成長装置及びエピタキシャルウェーハの製造方法
JP2002289597A (ja) * 2001-03-23 2002-10-04 Tokyo Electron Ltd 熱処理装置及びその方法
JP4655395B2 (ja) * 2001-03-23 2011-03-23 東京エレクトロン株式会社 熱処理装置及びその方法
EP1703549A4 (fr) * 2003-12-17 2009-09-02 Shinetsu Handotai Kk Dispositif de croissance en phase vapeur et procede de production de tranche epitaxiale
EP1703550A1 (fr) * 2003-12-17 2006-09-20 Shin-Etsu Handotai Company Limited Dispositif de croissance en phase vapeur et procede de production de tranche epitaxiale
US8926753B2 (en) 2003-12-17 2015-01-06 Shin-Etsu Handotai Co., Ltd. Vapor phase growth apparatus and method of fabricating epitaxial wafer
EP1703550A4 (fr) * 2003-12-17 2009-09-02 Shinetsu Handotai Kk Dispositif de croissance en phase vapeur et procede de production de tranche epitaxiale
EP1703549A1 (fr) * 2003-12-17 2006-09-20 Shin-Etsu Handotai Company Limited Dispositif de croissance en phase vapeur et procede de production de tranche epitaxiale
WO2005059980A1 (fr) * 2003-12-17 2005-06-30 Shin-Etsu Handotai Co., Ltd. Dispositif de croissance en phase vapeur et procede de production de tranche epitaxiale
WO2005059981A1 (fr) * 2003-12-17 2005-06-30 Shin-Etsu Handotai Co., Ltd. Dispositif de croissance en phase vapeur et procede de production de tranche epitaxiale
JP2007035720A (ja) * 2005-07-22 2007-02-08 Sumco Corp エピタキシャル成長装置及びエピタキシャルウェーハ製造方法
JP4655801B2 (ja) * 2005-07-22 2011-03-23 株式会社Ｓｕｍｃｏ エピタキシャル成長装置及びエピタキシャルウェーハ製造方法
US7992318B2 (en) * 2007-01-22 2011-08-09 Tokyo Electron Limited Heating apparatus, heating method, and computer readable storage medium
US8186077B2 (en) 2007-01-22 2012-05-29 Tokyo Electron Limited Heating apparatus, heating method, and computer readable storage medium
JP2013533641A (ja) * 2010-07-29 2013-08-22 ローレンス アドヴァンスド セミコンダクター テクノロジーズ，エルエルシー 基板処理装置およびシステム
US20150099065A1 (en) * 2012-06-07 2015-04-09 Soitec Gas injection components for deposition systems, deposition systems including such components, and related methods
KR102135229B1 (ko) * 2012-10-26 2020-07-17 어플라이드 머티어리얼스, 인코포레이티드 커스터마이즈 가능한 유동 주입을 구비하는 에피택셜 챔버
KR20150074165A (ko) * 2012-10-26 2015-07-01 어플라이드 머티어리얼스, 인코포레이티드 커스터마이즈 가능한 유동 주입을 구비하는 에피택셜 챔버
JP2015534283A (ja) * 2012-10-26 2015-11-26 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ カスタマイズ可能な流れの注入を伴うエピタキシャルチャンバ
US20140134332A1 (en) * 2012-11-15 2014-05-15 Spansion Llc Distribution of Gas Over A Semiconductor Water in Batch Processing
US9493874B2 (en) * 2012-11-15 2016-11-15 Cypress Semiconductor Corporation Distribution of gas over a semiconductor wafer in batch processing
US10788744B2 (en) 2013-03-12 2020-09-29 Applied Materials, Inc. Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor
US10072354B2 (en) 2013-03-14 2018-09-11 Applied Materials, Inc. Lower side wall for epitaxial growth apparatus
US11427928B2 (en) 2013-03-14 2022-08-30 Applied Materials, Inc. Lower side wall for epitaxtail growth apparatus
WO2014151867A1 (fr) * 2013-03-14 2014-09-25 Applied Materials, Inc. Procédé de formation de film au moyen d'une croissance épitaxiale et appareil de croissance épitaxiale
JP2016517633A (ja) * 2013-03-14 2016-06-16 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 蒸着で堆積されたフォトレジスト、及びそのための製造及びリソグラフィシステム
US9663873B2 (en) 2013-03-14 2017-05-30 Applied Materials, Inc. Ceiling portion for epitaxial growth apparatus
US9096949B2 (en) 2013-03-27 2015-08-04 Applied Materials, Inc. Susceptor support portion and epitaxial growth apparatus including susceptor support portion
US20150020734A1 (en) * 2013-07-17 2015-01-22 Applied Materials, Inc. Structure for improved gas activation for cross-flow type thermal cvd chamber
WO2015009784A1 (fr) * 2013-07-17 2015-01-22 Applied Materials, Inc. Structure d'activation améliorée de gaz pour chambre à cvd thermique à écoulements croisés
TWI648427B (zh) * 2013-07-17 2019-01-21 應用材料股份有限公司 用於交叉流動類型的熱ｃｖｄ腔室之改良的氣體活化的結構
KR101487411B1 (ko) 2013-09-02 2015-01-29 주식회사 엘지실트론 라이너 및 이를 포함하는 에피텍셜 반응기
KR20180012151A (ko) * 2016-07-26 2018-02-05 에스케이실트론 주식회사 에피택셜 웨이퍼 제조 장치
CN107761074A (zh) * 2016-08-19 2018-03-06 应用材料公司 用于外延腔室的上部锥体
US10446420B2 (en) 2016-08-19 2019-10-15 Applied Materials, Inc. Upper cone for epitaxy chamber
US10978324B2 (en) 2016-08-19 2021-04-13 Applied Materials, Inc. Upper cone for epitaxy chamber
CN107761074B (zh) * 2016-08-19 2021-05-25 应用材料公司 用于外延腔室的上部锥体
KR20180106964A (ko) * 2017-03-17 2018-10-01 어플라이드 머티어리얼스, 인코포레이티드 핀을 가진 회전자 커버
KR102462355B1 (ko) * 2017-03-17 2022-11-03 어플라이드 머티어리얼스, 인코포레이티드 핀을 가진 회전자 커버
US20220205134A1 (en) * 2020-12-31 2022-06-30 Globalwafers Co., Ltd. Systems and methods for a preheat ring in a semiconductor wafer reactor
CN113337810B (zh) * 2021-05-26 2022-04-22 北京北方华创微电子装备有限公司 内衬装置及半导体加工设备
CN113337810A (zh) * 2021-05-26 2021-09-03 北京北方华创微电子装备有限公司 内衬装置及半导体加工设备

Also Published As

Publication number Publication date
WO2000070662A1 (fr) 2000-11-23
TW457559B (en) 2001-10-01

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