TWI668826B - Lead frame, semiconductor device - Google Patents

Lead frame, semiconductor device Download PDF

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Publication number
TWI668826B
TWI668826B TW104140272A TW104140272A TWI668826B TW I668826 B TWI668826 B TW I668826B TW 104140272 A TW104140272 A TW 104140272A TW 104140272 A TW104140272 A TW 104140272A TW I668826 B TWI668826 B TW I668826B
Authority
TW
Taiwan
Prior art keywords
lead
semiconductor device
frame
step portion
resin
Prior art date
Application number
TW104140272A
Other languages
English (en)
Chinese (zh)
Other versions
TW201624658A (zh
Inventor
笠原哲一郎
坂井直也
小林秀基
大串正幸
Original Assignee
日商新光電氣工業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商新光電氣工業股份有限公司 filed Critical 日商新光電氣工業股份有限公司
Publication of TW201624658A publication Critical patent/TW201624658A/zh
Application granted granted Critical
Publication of TWI668826B publication Critical patent/TWI668826B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H10W70/424—Cross-sectional shapes
    • H10W70/427—Bent parts
    • H10W70/429—Bent parts being the outer leads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/464—Additional interconnections in combination with leadframes
    • H10W70/465—Bumps or wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H10W70/424—Cross-sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H10W70/442—Shapes or dispositions of multiple leadframes in a single chip
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/456—Materials
    • H10W70/457—Materials of metallic layers on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/464—Additional interconnections in combination with leadframes
    • H10W70/467—Multilayered additional interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/127—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed characterised by arrangements for sealing or adhesion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Wire Bonding (AREA)
TW104140272A 2014-12-19 2015-12-02 Lead frame, semiconductor device TWI668826B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014257463A JP6325975B2 (ja) 2014-12-19 2014-12-19 リードフレーム、半導体装置
JP2014-257463 2014-12-19

Publications (2)

Publication Number Publication Date
TW201624658A TW201624658A (zh) 2016-07-01
TWI668826B true TWI668826B (zh) 2019-08-11

Family

ID=56130317

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104140272A TWI668826B (zh) 2014-12-19 2015-12-02 Lead frame, semiconductor device

Country Status (5)

Country Link
US (1) US9698084B2 (https=)
JP (1) JP6325975B2 (https=)
KR (1) KR102452097B1 (https=)
CN (1) CN105720034B (https=)
TW (1) TWI668826B (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6325975B2 (ja) * 2014-12-19 2018-05-16 新光電気工業株式会社 リードフレーム、半導体装置
JP6577373B2 (ja) * 2016-01-18 2019-09-18 新光電気工業株式会社 リードフレーム及びその製造方法、半導体装置
JP6788509B2 (ja) * 2017-01-17 2020-11-25 株式会社三井ハイテック リードフレームの製造方法およびリードフレーム
JP6661565B2 (ja) * 2017-03-21 2020-03-11 株式会社東芝 半導体装置及びその製造方法
DE102017120747B4 (de) * 2017-09-08 2020-07-30 Infineon Technologies Austria Ag SMD-Gehäuse mit Oberseitenkühlung und Verfahren zu seiner Bereitstellung
RU180407U1 (ru) * 2018-02-06 2018-06-13 Закрытое акционерное общество "ГРУППА КРЕМНИЙ ЭЛ" Выводная рамка корпуса интегральной микросхемы
DE102018217659B4 (de) 2018-10-15 2022-08-04 Vitesco Technologies GmbH Anordnung und Verfahren zur Herstellung einer elektrisch leitfähigen Verbindung zwischen zwei Substraten
JP7271337B2 (ja) 2019-06-27 2023-05-11 新光電気工業株式会社 電子部品装置及び電子部品装置の製造方法
JP7467214B2 (ja) * 2020-04-22 2024-04-15 新光電気工業株式会社 配線基板、電子装置及び配線基板の製造方法
KR102514564B1 (ko) * 2021-06-28 2023-03-29 해성디에스 주식회사 홈이 형성된 리드를 포함하는 리드 프레임
JP7763055B2 (ja) * 2021-08-23 2025-10-31 株式会社ディスコ パッケージ基板、パッケージ基板の加工方法及びパッケージ基板の製造方法
CN114121853B (zh) * 2022-01-27 2022-05-24 深圳中科四合科技有限公司 大尺寸芯片适配小尺寸封装体的封装结构
US20250112133A1 (en) * 2023-09-29 2025-04-03 Texas Instruments Incorporated Packages with stepped conductive terminals

Citations (5)

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US20040011699A1 (en) * 2000-07-25 2004-01-22 Park Chan-Ik Plastic package base, air cavity type package and their manufacturing methods
TW200618267A (en) * 2004-11-22 2006-06-01 Matsushita Electric Industrial Co Ltd Optical device and optical apparatus
US8378347B2 (en) * 2010-01-29 2013-02-19 Kabushiki Kaisha Toshiba LED package
TW201413839A (zh) * 2012-09-24 2014-04-01 瑞薩電子股份有限公司 半導體裝置之製造方法及半導體裝置
US8710666B2 (en) * 2007-12-20 2014-04-29 Aisin Aw Co., Ltd. Semiconductor device and method for fabricating the same

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KR100335658B1 (ko) * 2000-07-25 2002-05-06 장석규 플라스틱 패캐지의 베이스 및 그 제조방법
SG102638A1 (en) * 2000-09-15 2004-03-26 Samsung Techwin Co Ltd Lead frame, semiconductor package having the same, and semiconductor package manufacturing method
JP3691790B2 (ja) 2001-12-27 2005-09-07 株式会社三井ハイテック 半導体装置の製造方法及び該方法によって製造された半導体装置
KR20060021744A (ko) * 2004-09-04 2006-03-08 삼성테크윈 주식회사 리드프레임 및 그 제조방법
US7352058B2 (en) * 2005-11-01 2008-04-01 Sandisk Corporation Methods for a multiple die integrated circuit package
CN101174602B (zh) * 2006-10-06 2011-10-05 万国半导体股份有限公司 高电流半导体功率器件小外形集成电路封装
US7622793B2 (en) * 2006-12-21 2009-11-24 Anderson Richard A Flip chip shielded RF I/O land grid array package
JP5343334B2 (ja) * 2007-07-17 2013-11-13 株式会社デンソー 溶接構造体およびその製造方法
CN101383293B (zh) * 2008-09-26 2010-08-04 凤凰半导体通信(苏州)有限公司 一种微型引线框架半导体封装方法
JP2010263094A (ja) * 2009-05-08 2010-11-18 Hitachi Metals Ltd リードフレーム
JP6325975B2 (ja) * 2014-12-19 2018-05-16 新光電気工業株式会社 リードフレーム、半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040011699A1 (en) * 2000-07-25 2004-01-22 Park Chan-Ik Plastic package base, air cavity type package and their manufacturing methods
TW200618267A (en) * 2004-11-22 2006-06-01 Matsushita Electric Industrial Co Ltd Optical device and optical apparatus
US8710666B2 (en) * 2007-12-20 2014-04-29 Aisin Aw Co., Ltd. Semiconductor device and method for fabricating the same
US8378347B2 (en) * 2010-01-29 2013-02-19 Kabushiki Kaisha Toshiba LED package
TW201413839A (zh) * 2012-09-24 2014-04-01 瑞薩電子股份有限公司 半導體裝置之製造方法及半導體裝置

Also Published As

Publication number Publication date
JP6325975B2 (ja) 2018-05-16
KR102452097B1 (ko) 2022-10-11
JP2016119366A (ja) 2016-06-30
US20160181187A1 (en) 2016-06-23
TW201624658A (zh) 2016-07-01
CN105720034A (zh) 2016-06-29
US9698084B2 (en) 2017-07-04
CN105720034B (zh) 2019-07-05
KR20160075316A (ko) 2016-06-29

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