CN105720034B - 引线框架、半导体装置 - Google Patents

引线框架、半导体装置 Download PDF

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Publication number
CN105720034B
CN105720034B CN201510882130.7A CN201510882130A CN105720034B CN 105720034 B CN105720034 B CN 105720034B CN 201510882130 A CN201510882130 A CN 201510882130A CN 105720034 B CN105720034 B CN 105720034B
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CN
China
Prior art keywords
lead
semiconductor device
frame
top surface
resin
Prior art date
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CN201510882130.7A
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English (en)
Chinese (zh)
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CN105720034A (zh
Inventor
笠原哲一郎
坂井直也
小林秀基
大串正幸
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Shinko Electric Co Ltd
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Shinko Electric Co Ltd
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Publication of CN105720034A publication Critical patent/CN105720034A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H10W70/424—Cross-sectional shapes
    • H10W70/427—Bent parts
    • H10W70/429—Bent parts being the outer leads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/464—Additional interconnections in combination with leadframes
    • H10W70/465—Bumps or wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H10W70/424—Cross-sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H10W70/442—Shapes or dispositions of multiple leadframes in a single chip
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/456—Materials
    • H10W70/457—Materials of metallic layers on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/464—Additional interconnections in combination with leadframes
    • H10W70/467—Multilayered additional interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/127—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed characterised by arrangements for sealing or adhesion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Wire Bonding (AREA)
CN201510882130.7A 2014-12-19 2015-12-03 引线框架、半导体装置 Active CN105720034B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014257463A JP6325975B2 (ja) 2014-12-19 2014-12-19 リードフレーム、半導体装置
JP2014-257463 2014-12-19

Publications (2)

Publication Number Publication Date
CN105720034A CN105720034A (zh) 2016-06-29
CN105720034B true CN105720034B (zh) 2019-07-05

Family

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Family Applications (1)

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CN201510882130.7A Active CN105720034B (zh) 2014-12-19 2015-12-03 引线框架、半导体装置

Country Status (5)

Country Link
US (1) US9698084B2 (https=)
JP (1) JP6325975B2 (https=)
KR (1) KR102452097B1 (https=)
CN (1) CN105720034B (https=)
TW (1) TWI668826B (https=)

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* Cited by examiner, † Cited by third party
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JP6325975B2 (ja) * 2014-12-19 2018-05-16 新光電気工業株式会社 リードフレーム、半導体装置
JP6577373B2 (ja) * 2016-01-18 2019-09-18 新光電気工業株式会社 リードフレーム及びその製造方法、半導体装置
JP6788509B2 (ja) * 2017-01-17 2020-11-25 株式会社三井ハイテック リードフレームの製造方法およびリードフレーム
JP6661565B2 (ja) * 2017-03-21 2020-03-11 株式会社東芝 半導体装置及びその製造方法
DE102017120747B4 (de) * 2017-09-08 2020-07-30 Infineon Technologies Austria Ag SMD-Gehäuse mit Oberseitenkühlung und Verfahren zu seiner Bereitstellung
RU180407U1 (ru) * 2018-02-06 2018-06-13 Закрытое акционерное общество "ГРУППА КРЕМНИЙ ЭЛ" Выводная рамка корпуса интегральной микросхемы
DE102018217659B4 (de) 2018-10-15 2022-08-04 Vitesco Technologies GmbH Anordnung und Verfahren zur Herstellung einer elektrisch leitfähigen Verbindung zwischen zwei Substraten
JP7271337B2 (ja) 2019-06-27 2023-05-11 新光電気工業株式会社 電子部品装置及び電子部品装置の製造方法
JP7467214B2 (ja) * 2020-04-22 2024-04-15 新光電気工業株式会社 配線基板、電子装置及び配線基板の製造方法
KR102514564B1 (ko) * 2021-06-28 2023-03-29 해성디에스 주식회사 홈이 형성된 리드를 포함하는 리드 프레임
JP7763055B2 (ja) * 2021-08-23 2025-10-31 株式会社ディスコ パッケージ基板、パッケージ基板の加工方法及びパッケージ基板の製造方法
CN114121853B (zh) * 2022-01-27 2022-05-24 深圳中科四合科技有限公司 大尺寸芯片适配小尺寸封装体的封装结构
US20250112133A1 (en) * 2023-09-29 2025-04-03 Texas Instruments Incorporated Packages with stepped conductive terminals

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CN1344024A (zh) * 2000-09-15 2002-04-10 三星Techwin株式会社 引线框架及具有引线框架的半导体封装和半导体封装的制造方法
CN1449583A (zh) * 2000-07-25 2003-10-15 Ssi株式会社 塑料封装基底、气腔型封装及其制造方法
CN101174602A (zh) * 2006-10-06 2008-05-07 万国半导体股份有限公司 高电流半导体功率器件小外形集成电路封装
CN101383293A (zh) * 2008-09-26 2009-03-11 凤凰半导体通信(苏州)有限公司 一种微型引线框架半导体封装方法
US7622793B2 (en) * 2006-12-21 2009-11-24 Anderson Richard A Flip chip shielded RF I/O land grid array package
JP5343334B2 (ja) * 2007-07-17 2013-11-13 株式会社デンソー 溶接構造体およびその製造方法
CN105720034A (zh) * 2014-12-19 2016-06-29 新光电气工业株式会社 引线框架、半导体装置

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KR100335658B1 (ko) * 2000-07-25 2002-05-06 장석규 플라스틱 패캐지의 베이스 및 그 제조방법
JP3691790B2 (ja) 2001-12-27 2005-09-07 株式会社三井ハイテック 半導体装置の製造方法及び該方法によって製造された半導体装置
KR20060021744A (ko) * 2004-09-04 2006-03-08 삼성테크윈 주식회사 리드프레임 및 그 제조방법
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CN1449583A (zh) * 2000-07-25 2003-10-15 Ssi株式会社 塑料封装基底、气腔型封装及其制造方法
CN1344024A (zh) * 2000-09-15 2002-04-10 三星Techwin株式会社 引线框架及具有引线框架的半导体封装和半导体封装的制造方法
CN1210793C (zh) * 2000-09-15 2005-07-13 三星Techwin株式会社 引线框架及具有引线框架的半导体封装和半导体封装的制造方法
CN101174602A (zh) * 2006-10-06 2008-05-07 万国半导体股份有限公司 高电流半导体功率器件小外形集成电路封装
CN101794760A (zh) * 2006-10-06 2010-08-04 万国半导体股份有限公司 高电流半导体功率器件小外形集成电路封装
CN101174602B (zh) * 2006-10-06 2011-10-05 万国半导体股份有限公司 高电流半导体功率器件小外形集成电路封装
CN101794760B (zh) * 2006-10-06 2012-05-23 万国半导体股份有限公司 高电流半导体功率器件小外形集成电路封装
US7622793B2 (en) * 2006-12-21 2009-11-24 Anderson Richard A Flip chip shielded RF I/O land grid array package
JP5343334B2 (ja) * 2007-07-17 2013-11-13 株式会社デンソー 溶接構造体およびその製造方法
CN101383293A (zh) * 2008-09-26 2009-03-11 凤凰半导体通信(苏州)有限公司 一种微型引线框架半导体封装方法
CN105720034A (zh) * 2014-12-19 2016-06-29 新光电气工业株式会社 引线框架、半导体装置

Also Published As

Publication number Publication date
JP6325975B2 (ja) 2018-05-16
TWI668826B (zh) 2019-08-11
KR102452097B1 (ko) 2022-10-11
JP2016119366A (ja) 2016-06-30
US20160181187A1 (en) 2016-06-23
TW201624658A (zh) 2016-07-01
CN105720034A (zh) 2016-06-29
US9698084B2 (en) 2017-07-04
KR20160075316A (ko) 2016-06-29

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