TWI665177B - 用於製造積體電路裝置、光學裝置、微機械及機械精密裝置之組成物 - Google Patents

用於製造積體電路裝置、光學裝置、微機械及機械精密裝置之組成物 Download PDF

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Publication number
TWI665177B
TWI665177B TW102125198A TW102125198A TWI665177B TW I665177 B TWI665177 B TW I665177B TW 102125198 A TW102125198 A TW 102125198A TW 102125198 A TW102125198 A TW 102125198A TW I665177 B TWI665177 B TW I665177B
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TW
Taiwan
Prior art keywords
alkyl
group
independently selected
photoresist
composition
Prior art date
Application number
TW102125198A
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English (en)
Chinese (zh)
Other versions
TW201425279A (zh
Inventor
安卓亞斯 克里普
安德烈 弘奇烏
潘切拉 薩布琳娜 蒙特羅
左潭 邦
Original Assignee
德商巴斯夫歐洲公司
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Publication date
Application filed by 德商巴斯夫歐洲公司 filed Critical 德商巴斯夫歐洲公司
Publication of TW201425279A publication Critical patent/TW201425279A/zh
Application granted granted Critical
Publication of TWI665177B publication Critical patent/TWI665177B/zh

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/32Liquid compositions therefor, e.g. developers
    • G03F7/322Aqueous alkaline compositions
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/32Liquid compositions therefor, e.g. developers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2041Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
TW102125198A 2012-07-16 2013-07-15 用於製造積體電路裝置、光學裝置、微機械及機械精密裝置之組成物 TWI665177B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261671806P 2012-07-16 2012-07-16
US61/671,806 2012-07-16

Publications (2)

Publication Number Publication Date
TW201425279A TW201425279A (zh) 2014-07-01
TWI665177B true TWI665177B (zh) 2019-07-11

Family

ID=49949313

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102125198A TWI665177B (zh) 2012-07-16 2013-07-15 用於製造積體電路裝置、光學裝置、微機械及機械精密裝置之組成物

Country Status (11)

Country Link
US (1) US20150192854A1 (enExample)
EP (1) EP2875406A4 (enExample)
JP (1) JP6328630B2 (enExample)
KR (1) KR102107370B1 (enExample)
CN (1) CN104471487B (enExample)
IL (1) IL236457B (enExample)
MY (1) MY171072A (enExample)
RU (1) RU2015104902A (enExample)
SG (1) SG11201500235XA (enExample)
TW (1) TWI665177B (enExample)
WO (1) WO2014013396A2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015028576A (ja) * 2013-07-01 2015-02-12 富士フイルム株式会社 パターン形成方法
KR102374206B1 (ko) 2017-12-05 2022-03-14 삼성전자주식회사 반도체 장치 제조 방법
EP4179057A1 (en) * 2020-07-09 2023-05-17 Basf Se Composition comprising a siloxane and an alkane for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102348676A (zh) * 2009-03-12 2012-02-08 巴斯夫欧洲公司 制备氢氧化1-金刚烷基三甲基铵的方法

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US4628023A (en) * 1981-04-10 1986-12-09 Shipley Company Inc. Metal ion free photoresist developer composition with lower alkyl quaternary ammonium hydrozide as alkalai agent and a quaternary ammonium compound as surfactant
JP3707856B2 (ja) * 1996-03-07 2005-10-19 富士通株式会社 レジストパターンの形成方法
JPH11218932A (ja) * 1997-10-31 1999-08-10 Nippon Zeon Co Ltd ポリイミド系感光性樹脂組成物用現像液
US6403289B1 (en) * 1997-10-31 2002-06-11 Nippon Zeon Co., Ltd. Developer for photosensitive polyimide resin composition
JP4265741B2 (ja) * 2003-02-28 2009-05-20 日本カーリット株式会社 レジスト剥離剤
JP3993549B2 (ja) * 2003-09-30 2007-10-17 株式会社東芝 レジストパターン形成方法
US7157213B2 (en) * 2004-03-01 2007-01-02 Think Laboratory Co., Ltd. Developer agent for positive type photosensitive compound
TWI391793B (zh) * 2005-06-13 2013-04-01 Tokuyama Corp 光阻顯影液、及使用該顯影液之基板的製造方法
JP5206304B2 (ja) * 2008-10-15 2013-06-12 東ソー株式会社 第四級アンモニウム塩の回収方法
EP2427804B1 (en) * 2009-05-07 2019-10-02 Basf Se Resist stripping compositions and methods for manufacturing electrical devices
JP5698922B2 (ja) 2009-06-26 2015-04-08 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. 電子デバイスを形成する方法
CN101993377A (zh) * 2009-08-07 2011-03-30 出光兴产株式会社 具有金刚烷骨架的胺类和季铵盐的制造方法
JP2011145557A (ja) * 2010-01-15 2011-07-28 Tokyo Ohka Kogyo Co Ltd フォトリソグラフィ用現像液
JP6213296B2 (ja) * 2013-04-10 2017-10-18 信越化学工業株式会社 現像液を用いたパターン形成方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102348676A (zh) * 2009-03-12 2012-02-08 巴斯夫欧洲公司 制备氢氧化1-金刚烷基三甲基铵的方法

Also Published As

Publication number Publication date
KR20150042796A (ko) 2015-04-21
RU2015104902A (ru) 2016-09-10
WO2014013396A2 (en) 2014-01-23
KR102107370B1 (ko) 2020-05-07
EP2875406A4 (en) 2016-11-09
JP2015524577A (ja) 2015-08-24
US20150192854A1 (en) 2015-07-09
IL236457B (en) 2020-04-30
IL236457A0 (en) 2015-02-26
EP2875406A2 (en) 2015-05-27
CN104471487A (zh) 2015-03-25
CN104471487B (zh) 2019-07-09
SG11201500235XA (en) 2015-02-27
MY171072A (en) 2019-09-24
TW201425279A (zh) 2014-07-01
WO2014013396A3 (en) 2014-03-06
JP6328630B2 (ja) 2018-05-23

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