CN104471487B - 用于制造集成电路装置、光学装置、微机械及机械精密装置的组合物 - Google Patents

用于制造集成电路装置、光学装置、微机械及机械精密装置的组合物 Download PDF

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Publication number
CN104471487B
CN104471487B CN201380037762.2A CN201380037762A CN104471487B CN 104471487 B CN104471487 B CN 104471487B CN 201380037762 A CN201380037762 A CN 201380037762A CN 104471487 B CN104471487 B CN 104471487B
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China
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alkyl
independently selected
photoresist
water
organic group
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Chinese (zh)
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CN104471487A (zh
Inventor
A·克里普
A·洪丘克
潘切拉 S·蒙特罗
Z·巴恩
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BASF SE
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BASF SE
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
CN201380037762.2A 2012-07-16 2013-07-12 用于制造集成电路装置、光学装置、微机械及机械精密装置的组合物 Active CN104471487B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261671806P 2012-07-16 2012-07-16
US61/671806 2012-07-16
PCT/IB2013/055728 WO2014013396A2 (en) 2012-07-16 2013-07-12 Composition for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices

Publications (2)

Publication Number Publication Date
CN104471487A CN104471487A (zh) 2015-03-25
CN104471487B true CN104471487B (zh) 2019-07-09

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CN201380037762.2A Active CN104471487B (zh) 2012-07-16 2013-07-12 用于制造集成电路装置、光学装置、微机械及机械精密装置的组合物

Country Status (11)

Country Link
US (1) US20150192854A1 (enExample)
EP (1) EP2875406A4 (enExample)
JP (1) JP6328630B2 (enExample)
KR (1) KR102107370B1 (enExample)
CN (1) CN104471487B (enExample)
IL (1) IL236457B (enExample)
MY (1) MY171072A (enExample)
RU (1) RU2015104902A (enExample)
SG (1) SG11201500235XA (enExample)
TW (1) TWI665177B (enExample)
WO (1) WO2014013396A2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015028576A (ja) * 2013-07-01 2015-02-12 富士フイルム株式会社 パターン形成方法
KR102374206B1 (ko) 2017-12-05 2022-03-14 삼성전자주식회사 반도체 장치 제조 방법
EP4179057A1 (en) * 2020-07-09 2023-05-17 Basf Se Composition comprising a siloxane and an alkane for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6403289B1 (en) * 1997-10-31 2002-06-11 Nippon Zeon Co., Ltd. Developer for photosensitive polyimide resin composition
JP2004264401A (ja) * 2003-02-28 2004-09-24 Japan Carlit Co Ltd:The レジスト剥離剤
CN1630034A (zh) * 2003-09-30 2005-06-22 株式会社东芝 抗蚀剂图形的形成方法和半导体器件的制造方法
CN102348676A (zh) * 2009-03-12 2012-02-08 巴斯夫欧洲公司 制备氢氧化1-金刚烷基三甲基铵的方法

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
US4628023A (en) * 1981-04-10 1986-12-09 Shipley Company Inc. Metal ion free photoresist developer composition with lower alkyl quaternary ammonium hydrozide as alkalai agent and a quaternary ammonium compound as surfactant
JP3707856B2 (ja) * 1996-03-07 2005-10-19 富士通株式会社 レジストパターンの形成方法
JPH11218932A (ja) * 1997-10-31 1999-08-10 Nippon Zeon Co Ltd ポリイミド系感光性樹脂組成物用現像液
US7157213B2 (en) * 2004-03-01 2007-01-02 Think Laboratory Co., Ltd. Developer agent for positive type photosensitive compound
TWI391793B (zh) * 2005-06-13 2013-04-01 Tokuyama Corp 光阻顯影液、及使用該顯影液之基板的製造方法
JP5206304B2 (ja) * 2008-10-15 2013-06-12 東ソー株式会社 第四級アンモニウム塩の回収方法
EP2427804B1 (en) * 2009-05-07 2019-10-02 Basf Se Resist stripping compositions and methods for manufacturing electrical devices
JP5698922B2 (ja) 2009-06-26 2015-04-08 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 電子デバイスを形成する方法
CN101993377A (zh) * 2009-08-07 2011-03-30 出光兴产株式会社 具有金刚烷骨架的胺类和季铵盐的制造方法
JP2011145557A (ja) * 2010-01-15 2011-07-28 Tokyo Ohka Kogyo Co Ltd フォトリソグラフィ用現像液
JP6213296B2 (ja) * 2013-04-10 2017-10-18 信越化学工業株式会社 現像液を用いたパターン形成方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6403289B1 (en) * 1997-10-31 2002-06-11 Nippon Zeon Co., Ltd. Developer for photosensitive polyimide resin composition
JP2004264401A (ja) * 2003-02-28 2004-09-24 Japan Carlit Co Ltd:The レジスト剥離剤
CN1630034A (zh) * 2003-09-30 2005-06-22 株式会社东芝 抗蚀剂图形的形成方法和半导体器件的制造方法
CN102348676A (zh) * 2009-03-12 2012-02-08 巴斯夫欧洲公司 制备氢氧化1-金刚烷基三甲基铵的方法

Also Published As

Publication number Publication date
KR20150042796A (ko) 2015-04-21
RU2015104902A (ru) 2016-09-10
WO2014013396A2 (en) 2014-01-23
KR102107370B1 (ko) 2020-05-07
EP2875406A4 (en) 2016-11-09
JP2015524577A (ja) 2015-08-24
TWI665177B (zh) 2019-07-11
US20150192854A1 (en) 2015-07-09
IL236457B (en) 2020-04-30
IL236457A0 (en) 2015-02-26
EP2875406A2 (en) 2015-05-27
CN104471487A (zh) 2015-03-25
SG11201500235XA (en) 2015-02-27
MY171072A (en) 2019-09-24
TW201425279A (zh) 2014-07-01
WO2014013396A3 (en) 2014-03-06
JP6328630B2 (ja) 2018-05-23

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