TWI629747B - 原位可移除式靜電吸盤 - Google Patents
原位可移除式靜電吸盤 Download PDFInfo
- Publication number
- TWI629747B TWI629747B TW106116396A TW106116396A TWI629747B TW I629747 B TWI629747 B TW I629747B TW 106116396 A TW106116396 A TW 106116396A TW 106116396 A TW106116396 A TW 106116396A TW I629747 B TWI629747 B TW I629747B
- Authority
- TW
- Taiwan
- Prior art keywords
- electrostatic chuck
- electrode
- dielectric layer
- esc
- top surface
- Prior art date
Links
- 238000011065 in-situ storage Methods 0.000 title description 3
- 239000000758 substrate Substances 0.000 claims abstract description 91
- 238000012545 processing Methods 0.000 claims description 39
- 239000004020 conductor Substances 0.000 claims description 28
- 238000012546 transfer Methods 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 13
- 229910010293 ceramic material Inorganic materials 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 238000012423 maintenance Methods 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 41
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- WABPQHHGFIMREM-YPZZEJLDSA-N lead-205 Chemical compound [205Pb] WABPQHHGFIMREM-YPZZEJLDSA-N 0.000 description 5
- WABPQHHGFIMREM-IGMARMGPSA-N lead-207 Chemical compound [207Pb] WABPQHHGFIMREM-IGMARMGPSA-N 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 239000012636 effector Substances 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 238000013022 venting Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49815—Disassembling
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Mechanical Engineering (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361862462P | 2013-08-05 | 2013-08-05 | |
| US61/862,462 | 2013-08-05 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201729337A TW201729337A (zh) | 2017-08-16 |
| TWI629747B true TWI629747B (zh) | 2018-07-11 |
Family
ID=52427453
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106116396A TWI629747B (zh) | 2013-08-05 | 2014-07-24 | 原位可移除式靜電吸盤 |
| TW103125335A TWI613752B (zh) | 2013-08-05 | 2014-07-24 | 原位可移除式靜電吸盤 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103125335A TWI613752B (zh) | 2013-08-05 | 2014-07-24 | 原位可移除式靜電吸盤 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US9508584B2 (enExample) |
| JP (1) | JP6423880B2 (enExample) |
| KR (2) | KR101876501B1 (enExample) |
| CN (1) | CN105359265B (enExample) |
| TW (2) | TWI629747B (enExample) |
| WO (1) | WO2015020791A1 (enExample) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US9264672B2 (en) | 2010-12-22 | 2016-02-16 | Magna Mirrors Of America, Inc. | Vision display system for vehicle |
| JP6518666B2 (ja) * | 2013-08-05 | 2019-05-22 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 薄い基板をハンドリングするための静電キャリア |
| KR101876501B1 (ko) * | 2013-08-05 | 2018-07-10 | 어플라이드 머티어리얼스, 인코포레이티드 | 인-시츄 제거 가능한 정전 척 |
| US9999947B2 (en) * | 2015-05-01 | 2018-06-19 | Component Re-Engineering Company, Inc. | Method for repairing heaters and chucks used in semiconductor processing |
| US10008399B2 (en) | 2015-05-19 | 2018-06-26 | Applied Materials, Inc. | Electrostatic puck assembly with metal bonded backing plate for high temperature processes |
| JP2017022343A (ja) * | 2015-07-15 | 2017-01-26 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体製造装置、ウエハリフトピン穴清掃治具 |
| CN108781045A (zh) * | 2016-01-12 | 2018-11-09 | 格拉比特公司 | 制造中基于电粘附操作的方法和系统 |
| US11011355B2 (en) * | 2017-05-12 | 2021-05-18 | Lam Research Corporation | Temperature-tuned substrate support for substrate processing systems |
| KR102098129B1 (ko) * | 2018-04-23 | 2020-04-07 | 주식회사 엠와이에스 | 정전기 척 |
| GB201815258D0 (en) | 2018-09-19 | 2018-10-31 | Spts Technologies Ltd | A support |
| US10957520B2 (en) | 2018-09-20 | 2021-03-23 | Lam Research Corporation | Long-life high-power terminals for substrate support with embedded heating elements |
| US11260679B2 (en) * | 2018-12-21 | 2022-03-01 | Kateeva, Inc. | Gripping for print substrates |
| KR102651311B1 (ko) | 2019-06-03 | 2024-03-27 | 삼성전자주식회사 | 마이크로폰들을 이용하여 사용자의 음성을 분석하는 전자 장치 및 모바일 장치 |
| WO2020255319A1 (ja) * | 2019-06-20 | 2020-12-24 | 株式会社日立ハイテク | プラズマ処理装置およびプラズマ処理方法 |
| US11887878B2 (en) | 2019-06-28 | 2024-01-30 | Applied Materials, Inc. | Detachable biasable electrostatic chuck for high temperature applications |
| KR102640172B1 (ko) | 2019-07-03 | 2024-02-23 | 삼성전자주식회사 | 기판 처리 장치 및 이의 구동 방법 |
| KR20220122634A (ko) * | 2019-12-31 | 2022-09-02 | 에이에스엠엘 홀딩 엔.브이. | 양면 정전 클램프를 제조하기 위한 시스템 및 방법 |
| US12334315B2 (en) * | 2020-04-30 | 2025-06-17 | Applied Materials, Inc. | Cooled substrate support assembly for radio frequency environments |
| KR102859370B1 (ko) * | 2020-06-29 | 2025-09-15 | 스미토모 오사카 세멘토 가부시키가이샤 | 정전 척 장치 |
| US11749542B2 (en) * | 2020-07-27 | 2023-09-05 | Applied Materials, Inc. | Apparatus, system, and method for non-contact temperature monitoring of substrate supports |
| US20220076978A1 (en) * | 2020-09-09 | 2022-03-10 | Applied Materials, Inc. | Alignment of an electrostatic chuck with a substrate support |
| CN114695048A (zh) * | 2020-12-30 | 2022-07-01 | 中微半导体设备(上海)股份有限公司 | 下电极组件和包含下电极组件的等离子体处理装置 |
| JP2022165477A (ja) * | 2021-04-20 | 2022-11-01 | 日新イオン機器株式会社 | ウエハ支持装置 |
| CN114220758B (zh) * | 2021-11-29 | 2025-05-23 | 北京北方华创微电子装备有限公司 | 晶圆承载装置及工艺腔室 |
| KR102757922B1 (ko) | 2022-07-29 | 2025-01-21 | 세메스 주식회사 | 기판 지지 장치 및 이를 포함하는 기판 처리 장치 |
| US20240249965A1 (en) * | 2023-01-19 | 2024-07-25 | Applied Materials, Inc. | Substrate support carrier having multiple ceramic discs |
| TWI844352B (zh) * | 2023-05-03 | 2024-06-01 | 劉華煒 | 半導體製程真空腔之靜電吸盤快速排氣結構 |
| US20250118586A1 (en) * | 2023-10-06 | 2025-04-10 | Applied Materials, Inc. | Electrostatically secured substrate support assembly |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040120095A1 (en) * | 2002-08-30 | 2004-06-24 | Hisashi Yanagida | Electrostatic chuck support mechanism, support stand device and plasma processing equipment |
| US20050016685A1 (en) * | 2003-06-30 | 2005-01-27 | Canon Kabushiki Kaisha | Substrate holding technique |
| CN101310366A (zh) * | 2006-03-22 | 2008-11-19 | 东京毅力科创株式会社 | 等离子体处理装置 |
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| JPH0828205B2 (ja) * | 1989-10-27 | 1996-03-21 | 株式会社日立製作所 | ウエハ搬送装置 |
| JP3095790B2 (ja) | 1991-01-22 | 2000-10-10 | 富士電機株式会社 | 静電チャック |
| JPH07257751A (ja) | 1994-03-18 | 1995-10-09 | Kanagawa Kagaku Gijutsu Akad | 静電浮上搬送装置及びその静電浮上用電極 |
| JP3596127B2 (ja) * | 1995-12-04 | 2004-12-02 | ソニー株式会社 | 静電チャック、薄板保持装置、半導体製造装置、搬送方法及び半導体の製造方法 |
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| JP6003011B2 (ja) * | 2011-03-31 | 2016-10-05 | 東京エレクトロン株式会社 | 基板処理装置 |
| KR102047001B1 (ko) | 2012-10-16 | 2019-12-03 | 삼성디스플레이 주식회사 | 정전 척 |
| KR101876501B1 (ko) * | 2013-08-05 | 2018-07-10 | 어플라이드 머티어리얼스, 인코포레이티드 | 인-시츄 제거 가능한 정전 척 |
| US9740111B2 (en) | 2014-05-16 | 2017-08-22 | Applied Materials, Inc. | Electrostatic carrier for handling substrates for processing |
| US10978334B2 (en) | 2014-09-02 | 2021-04-13 | Applied Materials, Inc. | Sealing structure for workpiece to substrate bonding in a processing chamber |
-
2014
- 2014-07-22 KR KR1020167005800A patent/KR101876501B1/ko active Active
- 2014-07-22 KR KR1020177031250A patent/KR20170124620A/ko not_active Ceased
- 2014-07-22 JP JP2016533311A patent/JP6423880B2/ja active Active
- 2014-07-22 WO PCT/US2014/047656 patent/WO2015020791A1/en not_active Ceased
- 2014-07-22 CN CN201480038576.5A patent/CN105359265B/zh active Active
- 2014-07-24 TW TW106116396A patent/TWI629747B/zh active
- 2014-07-24 TW TW103125335A patent/TWI613752B/zh active
- 2014-08-04 US US14/451,139 patent/US9508584B2/en active Active
-
2016
- 2016-11-16 US US15/353,499 patent/US9773692B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040120095A1 (en) * | 2002-08-30 | 2004-06-24 | Hisashi Yanagida | Electrostatic chuck support mechanism, support stand device and plasma processing equipment |
| US20050016685A1 (en) * | 2003-06-30 | 2005-01-27 | Canon Kabushiki Kaisha | Substrate holding technique |
| CN101310366A (zh) * | 2006-03-22 | 2008-11-19 | 东京毅力科创株式会社 | 等离子体处理装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201729337A (zh) | 2017-08-16 |
| JP6423880B2 (ja) | 2018-11-14 |
| TWI613752B (zh) | 2018-02-01 |
| KR20160041982A (ko) | 2016-04-18 |
| US9773692B2 (en) | 2017-09-26 |
| CN105359265A (zh) | 2016-02-24 |
| KR20170124620A (ko) | 2017-11-10 |
| TW201513262A (zh) | 2015-04-01 |
| JP2016531438A (ja) | 2016-10-06 |
| US9508584B2 (en) | 2016-11-29 |
| CN105359265B (zh) | 2018-12-14 |
| US20170062260A1 (en) | 2017-03-02 |
| WO2015020791A1 (en) | 2015-02-12 |
| US20150036259A1 (en) | 2015-02-05 |
| KR101876501B1 (ko) | 2018-07-10 |
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