CN105359265B - 原位可移除式静电夹盘 - Google Patents
原位可移除式静电夹盘 Download PDFInfo
- Publication number
- CN105359265B CN105359265B CN201480038576.5A CN201480038576A CN105359265B CN 105359265 B CN105359265 B CN 105359265B CN 201480038576 A CN201480038576 A CN 201480038576A CN 105359265 B CN105359265 B CN 105359265B
- Authority
- CN
- China
- Prior art keywords
- electrostatic chuck
- top surface
- esc
- electrode
- dielectric layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000011065 in-situ storage Methods 0.000 title description 3
- 239000000758 substrate Substances 0.000 claims abstract description 86
- 239000004020 conductor Substances 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 21
- 238000012423 maintenance Methods 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 36
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- WABPQHHGFIMREM-IGMARMGPSA-N lead-207 Chemical compound [207Pb] WABPQHHGFIMREM-IGMARMGPSA-N 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 3
- 239000012636 effector Substances 0.000 description 3
- 210000002304 esc Anatomy 0.000 description 3
- WABPQHHGFIMREM-YPZZEJLDSA-N lead-205 Chemical compound [205Pb] WABPQHHGFIMREM-YPZZEJLDSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 241000219991 Lythraceae Species 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 235000014360 Punica granatum Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- PSNPEOOEWZZFPJ-UHFFFAOYSA-N alumane;yttrium Chemical compound [AlH3].[Y] PSNPEOOEWZZFPJ-UHFFFAOYSA-N 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000009419 refurbishment Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49815—Disassembling
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Mechanical Engineering (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361862462P | 2013-08-05 | 2013-08-05 | |
| US61/862,462 | 2013-08-05 | ||
| PCT/US2014/047656 WO2015020791A1 (en) | 2013-08-05 | 2014-07-22 | In-situ removable electrostatic chuck |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105359265A CN105359265A (zh) | 2016-02-24 |
| CN105359265B true CN105359265B (zh) | 2018-12-14 |
Family
ID=52427453
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201480038576.5A Active CN105359265B (zh) | 2013-08-05 | 2014-07-22 | 原位可移除式静电夹盘 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US9508584B2 (enExample) |
| JP (1) | JP6423880B2 (enExample) |
| KR (2) | KR101876501B1 (enExample) |
| CN (1) | CN105359265B (enExample) |
| TW (2) | TWI629747B (enExample) |
| WO (1) | WO2015020791A1 (enExample) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9264672B2 (en) | 2010-12-22 | 2016-02-16 | Magna Mirrors Of America, Inc. | Vision display system for vehicle |
| JP6518666B2 (ja) * | 2013-08-05 | 2019-05-22 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 薄い基板をハンドリングするための静電キャリア |
| KR101876501B1 (ko) * | 2013-08-05 | 2018-07-10 | 어플라이드 머티어리얼스, 인코포레이티드 | 인-시츄 제거 가능한 정전 척 |
| US9999947B2 (en) * | 2015-05-01 | 2018-06-19 | Component Re-Engineering Company, Inc. | Method for repairing heaters and chucks used in semiconductor processing |
| US10008399B2 (en) | 2015-05-19 | 2018-06-26 | Applied Materials, Inc. | Electrostatic puck assembly with metal bonded backing plate for high temperature processes |
| JP2017022343A (ja) * | 2015-07-15 | 2017-01-26 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体製造装置、ウエハリフトピン穴清掃治具 |
| CN108781045A (zh) * | 2016-01-12 | 2018-11-09 | 格拉比特公司 | 制造中基于电粘附操作的方法和系统 |
| US11011355B2 (en) * | 2017-05-12 | 2021-05-18 | Lam Research Corporation | Temperature-tuned substrate support for substrate processing systems |
| KR102098129B1 (ko) * | 2018-04-23 | 2020-04-07 | 주식회사 엠와이에스 | 정전기 척 |
| GB201815258D0 (en) | 2018-09-19 | 2018-10-31 | Spts Technologies Ltd | A support |
| US10957520B2 (en) | 2018-09-20 | 2021-03-23 | Lam Research Corporation | Long-life high-power terminals for substrate support with embedded heating elements |
| US11260679B2 (en) * | 2018-12-21 | 2022-03-01 | Kateeva, Inc. | Gripping for print substrates |
| KR102651311B1 (ko) | 2019-06-03 | 2024-03-27 | 삼성전자주식회사 | 마이크로폰들을 이용하여 사용자의 음성을 분석하는 전자 장치 및 모바일 장치 |
| WO2020255319A1 (ja) * | 2019-06-20 | 2020-12-24 | 株式会社日立ハイテク | プラズマ処理装置およびプラズマ処理方法 |
| US11887878B2 (en) | 2019-06-28 | 2024-01-30 | Applied Materials, Inc. | Detachable biasable electrostatic chuck for high temperature applications |
| KR102640172B1 (ko) | 2019-07-03 | 2024-02-23 | 삼성전자주식회사 | 기판 처리 장치 및 이의 구동 방법 |
| KR20220122634A (ko) * | 2019-12-31 | 2022-09-02 | 에이에스엠엘 홀딩 엔.브이. | 양면 정전 클램프를 제조하기 위한 시스템 및 방법 |
| US12334315B2 (en) * | 2020-04-30 | 2025-06-17 | Applied Materials, Inc. | Cooled substrate support assembly for radio frequency environments |
| KR102859370B1 (ko) * | 2020-06-29 | 2025-09-15 | 스미토모 오사카 세멘토 가부시키가이샤 | 정전 척 장치 |
| US11749542B2 (en) * | 2020-07-27 | 2023-09-05 | Applied Materials, Inc. | Apparatus, system, and method for non-contact temperature monitoring of substrate supports |
| US20220076978A1 (en) * | 2020-09-09 | 2022-03-10 | Applied Materials, Inc. | Alignment of an electrostatic chuck with a substrate support |
| CN114695048A (zh) * | 2020-12-30 | 2022-07-01 | 中微半导体设备(上海)股份有限公司 | 下电极组件和包含下电极组件的等离子体处理装置 |
| JP2022165477A (ja) * | 2021-04-20 | 2022-11-01 | 日新イオン機器株式会社 | ウエハ支持装置 |
| CN114220758B (zh) * | 2021-11-29 | 2025-05-23 | 北京北方华创微电子装备有限公司 | 晶圆承载装置及工艺腔室 |
| KR102757922B1 (ko) | 2022-07-29 | 2025-01-21 | 세메스 주식회사 | 기판 지지 장치 및 이를 포함하는 기판 처리 장치 |
| US20240249965A1 (en) * | 2023-01-19 | 2024-07-25 | Applied Materials, Inc. | Substrate support carrier having multiple ceramic discs |
| TWI844352B (zh) * | 2023-05-03 | 2024-06-01 | 劉華煒 | 半導體製程真空腔之靜電吸盤快速排氣結構 |
| US20250118586A1 (en) * | 2023-10-06 | 2025-04-10 | Applied Materials, Inc. | Electrostatically secured substrate support assembly |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101310366A (zh) * | 2006-03-22 | 2008-11-19 | 东京毅力科创株式会社 | 等离子体处理装置 |
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| JPH0828205B2 (ja) * | 1989-10-27 | 1996-03-21 | 株式会社日立製作所 | ウエハ搬送装置 |
| JP3095790B2 (ja) | 1991-01-22 | 2000-10-10 | 富士電機株式会社 | 静電チャック |
| JPH07257751A (ja) | 1994-03-18 | 1995-10-09 | Kanagawa Kagaku Gijutsu Akad | 静電浮上搬送装置及びその静電浮上用電極 |
| JP3596127B2 (ja) * | 1995-12-04 | 2004-12-02 | ソニー株式会社 | 静電チャック、薄板保持装置、半導体製造装置、搬送方法及び半導体の製造方法 |
| US5740009A (en) * | 1996-11-29 | 1998-04-14 | Applied Materials, Inc. | Apparatus for improving wafer and chuck edge protection |
| JP3296292B2 (ja) * | 1998-06-26 | 2002-06-24 | 松下電器産業株式会社 | エッチング方法、クリーニング方法、及びプラズマ処理装置 |
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| JP2002357838A (ja) | 2001-05-31 | 2002-12-13 | Hitachi Industries Co Ltd | 基板貼り合わせ方法及びその装置 |
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| JP2004103799A (ja) * | 2002-09-09 | 2004-04-02 | Canon Inc | 基板保持装置、デバイス製造装置及びデバイス製造方法 |
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| JP2005245106A (ja) * | 2004-02-25 | 2005-09-08 | Kyocera Corp | 静電チャック |
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| KR20070016227A (ko) * | 2005-08-02 | 2007-02-08 | 삼성전자주식회사 | 반도체 제조설비 |
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| JP4802018B2 (ja) | 2006-03-09 | 2011-10-26 | 筑波精工株式会社 | 静電保持装置及びそれを用いた真空環境装置並びにアライメント装置又は貼り合わせ装置 |
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| KR101001454B1 (ko) | 2009-01-23 | 2010-12-14 | 삼성모바일디스플레이주식회사 | 정전척 및 이를 구비한 유기전계발광 소자의 제조장치 |
| EP2400536B1 (en) * | 2009-02-18 | 2020-04-15 | Ulvac, Inc. | Wafer conveying tray and method of securing wafer on tray |
| US20120227886A1 (en) | 2011-03-10 | 2012-09-13 | Taipei Semiconductor Manufacturing Company, Ltd. | Substrate Assembly Carrier Using Electrostatic Force |
| JP6003011B2 (ja) * | 2011-03-31 | 2016-10-05 | 東京エレクトロン株式会社 | 基板処理装置 |
| KR102047001B1 (ko) | 2012-10-16 | 2019-12-03 | 삼성디스플레이 주식회사 | 정전 척 |
| KR101876501B1 (ko) * | 2013-08-05 | 2018-07-10 | 어플라이드 머티어리얼스, 인코포레이티드 | 인-시츄 제거 가능한 정전 척 |
| US9740111B2 (en) | 2014-05-16 | 2017-08-22 | Applied Materials, Inc. | Electrostatic carrier for handling substrates for processing |
| US10978334B2 (en) | 2014-09-02 | 2021-04-13 | Applied Materials, Inc. | Sealing structure for workpiece to substrate bonding in a processing chamber |
-
2014
- 2014-07-22 KR KR1020167005800A patent/KR101876501B1/ko active Active
- 2014-07-22 KR KR1020177031250A patent/KR20170124620A/ko not_active Ceased
- 2014-07-22 JP JP2016533311A patent/JP6423880B2/ja active Active
- 2014-07-22 WO PCT/US2014/047656 patent/WO2015020791A1/en not_active Ceased
- 2014-07-22 CN CN201480038576.5A patent/CN105359265B/zh active Active
- 2014-07-24 TW TW106116396A patent/TWI629747B/zh active
- 2014-07-24 TW TW103125335A patent/TWI613752B/zh active
- 2014-08-04 US US14/451,139 patent/US9508584B2/en active Active
-
2016
- 2016-11-16 US US15/353,499 patent/US9773692B2/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101310366A (zh) * | 2006-03-22 | 2008-11-19 | 东京毅力科创株式会社 | 等离子体处理装置 |
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| TW201729337A (zh) | 2017-08-16 |
| JP6423880B2 (ja) | 2018-11-14 |
| TWI613752B (zh) | 2018-02-01 |
| KR20160041982A (ko) | 2016-04-18 |
| US9773692B2 (en) | 2017-09-26 |
| TWI629747B (zh) | 2018-07-11 |
| CN105359265A (zh) | 2016-02-24 |
| KR20170124620A (ko) | 2017-11-10 |
| TW201513262A (zh) | 2015-04-01 |
| JP2016531438A (ja) | 2016-10-06 |
| US9508584B2 (en) | 2016-11-29 |
| US20170062260A1 (en) | 2017-03-02 |
| WO2015020791A1 (en) | 2015-02-12 |
| US20150036259A1 (en) | 2015-02-05 |
| KR101876501B1 (ko) | 2018-07-10 |
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