TWI623039B - 半導體裝置及其製造方法 - Google Patents

半導體裝置及其製造方法 Download PDF

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Publication number
TWI623039B
TWI623039B TW106115343A TW106115343A TWI623039B TW I623039 B TWI623039 B TW I623039B TW 106115343 A TW106115343 A TW 106115343A TW 106115343 A TW106115343 A TW 106115343A TW I623039 B TWI623039 B TW I623039B
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Taiwan
Prior art keywords
transistor
region
oxide semiconductor
insulating film
film
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TW106115343A
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English (en)
Chinese (zh)
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TW201730964A (zh
Inventor
肥塚純一
大野普司
佐藤優一
高橋正弘
岸田英幸
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半導體能源研究所股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Non-Volatile Memory (AREA)
TW106115343A 2011-03-11 2012-03-08 半導體裝置及其製造方法 TWI623039B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011-054610 2011-03-11
JP2011054610 2011-03-11

Publications (2)

Publication Number Publication Date
TW201730964A TW201730964A (zh) 2017-09-01
TWI623039B true TWI623039B (zh) 2018-05-01

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Family Applications (2)

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TW106115343A TWI623039B (zh) 2011-03-11 2012-03-08 半導體裝置及其製造方法
TW101107922A TWI594326B (zh) 2011-03-11 2012-03-08 半導體裝置及其製造方法

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Country Status (4)

Country Link
US (2) US9184296B2 (https=)
JP (9) JP2012209543A (https=)
KR (1) KR101963562B1 (https=)
TW (2) TWI623039B (https=)

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US8901556B2 (en) * 2012-04-06 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Insulating film, method for manufacturing semiconductor device, and semiconductor device
TWI761605B (zh) * 2012-09-14 2022-04-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
TWI671910B (zh) 2012-09-24 2019-09-11 日商半導體能源研究所股份有限公司 半導體裝置
KR102112364B1 (ko) * 2012-12-06 2020-05-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
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US9231111B2 (en) * 2013-02-13 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9515094B2 (en) * 2013-06-26 2016-12-06 Semiconductor Energy Laboratory Co., Ltd. Storage device and semiconductor device
JP2016027597A (ja) * 2013-12-06 2016-02-18 株式会社半導体エネルギー研究所 半導体装置
KR20220046701A (ko) 2013-12-27 2022-04-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치
US9929279B2 (en) 2014-02-05 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10032888B2 (en) 2014-08-22 2018-07-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing semiconductor device, and electronic appliance having semiconductor device
CN107683531B (zh) * 2015-05-22 2022-04-29 株式会社半导体能源研究所 半导体装置以及包括该半导体装置的显示装置
KR102354726B1 (ko) 2015-07-03 2022-01-24 삼성디스플레이 주식회사 액정 표시 장치
CN106409919A (zh) * 2015-07-30 2017-02-15 株式会社半导体能源研究所 半导体装置以及包括该半导体装置的显示装置
CN106505067B (zh) * 2015-09-08 2019-10-25 鸿富锦精密工业（深圳）有限公司 互补金属氧化物半导体装置及制造方法
JP6871722B2 (ja) * 2016-11-17 2021-05-12 株式会社半導体エネルギー研究所 半導体装置
JP7194122B2 (ja) 2018-01-05 2022-12-21 株式会社半導体エネルギー研究所 半導体装置
US11799032B2 (en) 2018-03-16 2023-10-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US12166134B2 (en) * 2019-03-01 2024-12-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102924986B1 (ko) * 2023-10-25 2026-02-09 고려대학교 산학협력단 3차원 인공결정립 적용 기반 멤트랜지스터 및 그 제조 방법
KR20250127901A (ko) 2024-02-20 2025-08-27 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 이를 포함하는 표시 장치
WO2025196598A1 (ja) * 2024-03-21 2025-09-25 株式会社半導体エネルギー研究所 半導体装置

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