TWI612658B - 顯示裝置 - Google Patents
顯示裝置 Download PDFInfo
- Publication number
- TWI612658B TWI612658B TW105138044A TW105138044A TWI612658B TW I612658 B TWI612658 B TW I612658B TW 105138044 A TW105138044 A TW 105138044A TW 105138044 A TW105138044 A TW 105138044A TW I612658 B TWI612658 B TW I612658B
- Authority
- TW
- Taiwan
- Prior art keywords
- wiring
- insulating layer
- opening
- display device
- pixel
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims abstract description 81
- 239000004065 semiconductor Substances 0.000 claims description 57
- 229910052751 metal Inorganic materials 0.000 claims description 46
- 239000002184 metal Substances 0.000 claims description 46
- 238000009413 insulation Methods 0.000 claims description 13
- 230000001681 protective effect Effects 0.000 claims description 13
- 239000012535 impurity Substances 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 308
- 239000010408 film Substances 0.000 description 64
- 239000011347 resin Substances 0.000 description 27
- 229920005989 resin Polymers 0.000 description 27
- 229910052581 Si3N4 Inorganic materials 0.000 description 13
- 239000003990 capacitor Substances 0.000 description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 13
- 238000005452 bending Methods 0.000 description 12
- 239000011810 insulating material Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 238000007789 sealing Methods 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000012044 organic layer Substances 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 239000012788 optical film Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/87—Arrangements for heating or cooling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
- H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/821—Patterning of a layer by embossing, e.g. stamping to form trenches in an insulating layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8794—Arrangements for heating and cooling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015248687 | 2015-12-21 | ||
| JP2016020546A JP6412036B2 (ja) | 2015-12-21 | 2016-02-05 | 表示装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201735343A TW201735343A (zh) | 2017-10-01 |
| TWI612658B true TWI612658B (zh) | 2018-01-21 |
Family
ID=59231788
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105138044A TWI612658B (zh) | 2015-12-21 | 2016-11-21 | 顯示裝置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US10586839B2 (enExample) |
| JP (1) | JP6412036B2 (enExample) |
| KR (1) | KR101947878B1 (enExample) |
| TW (1) | TWI612658B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI715190B (zh) * | 2018-10-26 | 2021-01-01 | 日商日本顯示器股份有限公司 | 顯示裝置 |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101834793B1 (ko) * | 2017-07-28 | 2018-03-06 | 엘지디스플레이 주식회사 | 플렉서블 디스플레이 및 이를 포함하는 전자 장치 |
| KR102340729B1 (ko) | 2017-07-31 | 2021-12-16 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 |
| CN109427818B (zh) * | 2017-08-31 | 2019-11-01 | 昆山国显光电有限公司 | 一种可折叠阵列基板和显示装置 |
| WO2019064439A1 (ja) * | 2017-09-28 | 2019-04-04 | シャープ株式会社 | 表示装置 |
| WO2019064436A1 (ja) * | 2017-09-28 | 2019-04-04 | シャープ株式会社 | 表示装置 |
| JP7219830B2 (ja) * | 2017-11-28 | 2023-02-08 | 株式会社ジャパンディスプレイ | 素子基板 |
| JP7013216B2 (ja) * | 2017-11-28 | 2022-01-31 | 株式会社ジャパンディスプレイ | 表示装置 |
| JP2019121734A (ja) * | 2018-01-10 | 2019-07-22 | 株式会社Ｊｏｌｅｄ | 半導体装置および表示装置 |
| JP7040140B2 (ja) * | 2018-03-07 | 2022-03-23 | セイコーエプソン株式会社 | 光電変換素子、光電変換モジュールおよび電子機器 |
| WO2019186819A1 (ja) * | 2018-03-28 | 2019-10-03 | シャープ株式会社 | 表示装置及びその製造方法 |
| US11087661B2 (en) * | 2019-03-05 | 2021-08-10 | Innolux Corporation | Display device having curved portion |
| JP7245712B2 (ja) * | 2019-05-23 | 2023-03-24 | 株式会社ジャパンディスプレイ | 表示装置 |
| US20220404877A1 (en) * | 2019-12-06 | 2022-12-22 | Sharp Kabushiki Kaisha | Foldable display |
| WO2022041022A1 (zh) * | 2020-08-27 | 2022-03-03 | 京东方科技集团股份有限公司 | 显示基板及显示装置 |
| WO2022085431A1 (ja) * | 2020-10-23 | 2022-04-28 | 東レ株式会社 | 表示装置および表示装置の製造方法 |
| US20230369271A1 (en) * | 2020-10-23 | 2023-11-16 | Toray Industries, Inc. | Display device and method for manufacturing display device |
| CN113540184B (zh) * | 2021-06-16 | 2023-11-28 | 合肥维信诺科技有限公司 | 一种显示面板及其制备方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004022875A (ja) * | 2002-06-18 | 2004-01-22 | Hitachi Ltd | 表示装置 |
| JP2007288078A (ja) * | 2006-04-20 | 2007-11-01 | Seiko Epson Corp | フレキシブル電子デバイス及びその製造方法 |
| TW201417272A (zh) * | 2012-10-29 | 2014-05-01 | Seiko Epson Corp | 有機ｅｌ裝置、有機ｅｌ裝置之製造方法、電子機器 |
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| JPH0717059Y2 (ja) * | 1987-07-31 | 1995-04-19 | 三洋電機株式会社 | 液晶表示パネル用電極基板 |
| US7030551B2 (en) | 2000-08-10 | 2006-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Area sensor and display apparatus provided with an area sensor |
| GB0108309D0 (en) * | 2001-04-03 | 2001-05-23 | Koninkl Philips Electronics Nv | Matrix array devices with flexible substrates |
| JP5169737B2 (ja) | 2002-04-18 | 2013-03-27 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| JP4403354B2 (ja) * | 2002-09-11 | 2010-01-27 | ソニー株式会社 | 薄膜回路基板 |
| JP5258156B2 (ja) * | 2005-10-27 | 2013-08-07 | 株式会社ジャパンディスプレイ | 液晶表示装置およびその製造方法 |
| JP2008107440A (ja) * | 2006-10-24 | 2008-05-08 | Casio Comput Co Ltd | 表示装置 |
| JP5074129B2 (ja) * | 2007-08-21 | 2012-11-14 | 株式会社ジャパンディスプレイイースト | 表示装置 |
| JP2009239110A (ja) * | 2008-03-27 | 2009-10-15 | Seiko Epson Corp | 半導体装置、電気光学装置および電子機器 |
| CN102422338B (zh) * | 2009-05-02 | 2015-04-01 | 株式会社半导体能源研究所 | 显示设备 |
| JP5446790B2 (ja) * | 2009-12-02 | 2014-03-19 | セイコーエプソン株式会社 | 電気光学装置および電子機器 |
| JP2013114072A (ja) * | 2011-11-29 | 2013-06-10 | Sony Corp | 薄膜トランジスタアレイおよびその製造方法、並びに表示装置 |
| CN108615744A (zh) | 2013-07-12 | 2018-10-02 | 株式会社半导体能源研究所 | 发光装置 |
| JP2015036797A (ja) * | 2013-08-15 | 2015-02-23 | ソニー株式会社 | 表示装置および電子機器 |
| KR102124025B1 (ko) * | 2013-12-23 | 2020-06-17 | 엘지디스플레이 주식회사 | 유기발광다이오드 표시장치 및 그 제조방법 |
| KR102347532B1 (ko) | 2014-01-23 | 2022-01-05 | 삼성디스플레이 주식회사 | 접을 수 있는 플렉서블 표시 장치 및 이의 제조 방법 |
| TWI654736B (zh) * | 2014-02-14 | 2019-03-21 | 日商半導體能源研究所股份有限公司 | 發光裝置 |
| KR102167315B1 (ko) * | 2014-04-30 | 2020-10-20 | 삼성디스플레이 주식회사 | 유기전계발광 표시장치 |
| CN106463082B (zh) * | 2014-06-23 | 2019-07-16 | 株式会社半导体能源研究所 | 显示装置及电子设备 |
| KR20160000096A (ko) | 2014-06-23 | 2016-01-04 | 삼성디스플레이 주식회사 | 표시 장치 |
| KR102285384B1 (ko) | 2014-09-15 | 2021-08-04 | 삼성디스플레이 주식회사 | 박막 트랜지스터 어레이 기판, 그 제조방법 및 표시 장치 |
| US10347702B2 (en) * | 2014-10-22 | 2019-07-09 | Lg Display Co., Ltd. | Flexible thin film transistor substrate and flexible organic light emitting display device |
| JP2016146422A (ja) | 2015-02-09 | 2016-08-12 | 株式会社ジャパンディスプレイ | 表示装置 |
| KR102378361B1 (ko) * | 2015-04-15 | 2022-03-25 | 삼성디스플레이 주식회사 | 플렉서블 디스플레이 장치 및 이의 제조 방법 |
-
2016
- 2016-02-05 JP JP2016020546A patent/JP6412036B2/ja active Active
- 2016-11-21 TW TW105138044A patent/TWI612658B/zh active
- 2016-12-02 KR KR1020160163206A patent/KR101947878B1/ko active Active
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2019
- 2019-06-25 US US16/451,523 patent/US10586839B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004022875A (ja) * | 2002-06-18 | 2004-01-22 | Hitachi Ltd | 表示装置 |
| JP2007288078A (ja) * | 2006-04-20 | 2007-11-01 | Seiko Epson Corp | フレキシブル電子デバイス及びその製造方法 |
| TW201417272A (zh) * | 2012-10-29 | 2014-05-01 | Seiko Epson Corp | 有機ｅｌ裝置、有機ｅｌ裝置之製造方法、電子機器 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI715190B (zh) * | 2018-10-26 | 2021-01-01 | 日商日本顯示器股份有限公司 | 顯示裝置 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201735343A (zh) | 2017-10-01 |
| US20190312092A1 (en) | 2019-10-10 |
| KR20170074167A (ko) | 2017-06-29 |
| KR101947878B1 (ko) | 2019-02-13 |
| US10586839B2 (en) | 2020-03-10 |
| JP2017116904A (ja) | 2017-06-29 |
| JP6412036B2 (ja) | 2018-10-24 |
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