TWI581346B - Connection method, manufacturing method of connection structure, manufacturing method of wafer stacking part, and method of assembling electronic component - Google Patents

Connection method, manufacturing method of connection structure, manufacturing method of wafer stacking part, and method of assembling electronic component Download PDF

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Publication number
TWI581346B
TWI581346B TW101141272A TW101141272A TWI581346B TW I581346 B TWI581346 B TW I581346B TW 101141272 A TW101141272 A TW 101141272A TW 101141272 A TW101141272 A TW 101141272A TW I581346 B TWI581346 B TW I581346B
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Taiwan
Prior art keywords
elastic body
wafer
electronic component
component
manufacturing
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TW101141272A
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English (en)
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TW201338065A (zh
Inventor
Takayuki Saito
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Dexerials Corp
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    • H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L24/742—Apparatus for manufacturing bump connectors
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3512—Cracking

Description

連接裝置、連接構造體之製造方法、晶片堆疊零件之製造方法及電子零件之構裝方法
本發明係關於一種連接裝置、連接構造體及電子零件之製造方法、構裝方法，特別是關於一種藉由介隔緩衝材對經由接著劑配置於基板構裝部之電子零件進行加熱抵壓而進行構裝的連接裝置、連接構造體及電子零件之製造方法、構裝方法。
本申請案係以2011年11月7日於日本提出申請之日本專利申請編號特願2011-243528為基礎並主張優先權者，且該申請案藉由參照被引用於本申請案中。
先前，作為將半導體晶片等電子零件構裝於基板之方法，已知有如下者：介隔異向性導電膜(ACF：Anisotropic Conductive Film)將電子零件搭載於基板，利用加熱抵壓頭對電子零件進行熱加壓。作為用於該方法之構裝裝置100，存在如下者：其如圖7所示，具備載置有基板101之載置部102，及對介隔異向性導電膜103搭載於基板101上之電子零件104進行熱加壓之加熱抵壓頭105。
加熱抵壓頭105內藏有加熱器，並且藉由未圖示之升降機構對載置部102自由升降。並且，構裝裝置100中，一旦基板上介隔異向性導電膜103搭載有電子零件104，則將加熱抵壓頭105抵壓於電子零件之上表面，以特定溫度、特定壓力進行特定時間之熱加壓。藉此，構裝裝置100使電子零件104電性、機械性地連接於基板101。
又，作為構裝裝置，如圖8所示，亦有於加熱抵壓頭105與電子零件104之間夾設有緩衝材106之情況。構裝裝置100藉由夾設緩衝材106，可防止壓力集中於電子零件104之電極104a，且防止電子零件104或基板101之彎曲或破裂。緩衝材106係使用矽橡膠等彈性體而形成。又，作為緩衝材106，已知有緩衝材106a，其如圖8(a)所示，形成為平板形狀，且對搭載有電子零件104之基板101的整個上表面進行抵壓；或緩衝材106b，其如圖8(b)所示，凹陷地設計對應事先構裝之電子零件107之形狀的凹陷部108，有效地分散對電子零件107之壓力集中。
[專利文獻1]日本專利特開2007-227622號公報
然而，用於先前之構裝裝置中之緩衝材106由於使應力集中於基板101或電子零件104之外周部，因此有於電子零件104產生破裂等情形。
又，近年來，作為電子零件，使用有如圖9所示之將厚度100 μm左右之晶片基板積層而構成的晶片堆疊零件108。該晶片堆疊零件108係藉由如下方式形成：於晶片基板109開設小孔，於其中填充Cu等金屬，藉此將堆積成夾層狀之複數個晶片基板電性連接。
於構裝此種晶片堆疊零件108之情形時，由於晶片基板表面凸出有金屬凸塊110(bump)，故而有如下產生破裂之虞：加熱抵壓頭105之抵壓力容易集中於該金屬凸塊110，因該壓力集中而於晶片基板109中產生破裂。特別是 於使用厚度為50 μm以下之極薄晶片基板109時，其風險升高。
又，即便於為避免此種晶片基板109之破裂而夾設如圖8(a)所示之緩衝材106a、或如圖9所示之支撐晶片堆疊零件108之上表面及側面之由彈性體所構成之緩衝材111的情形時，亦有受到加熱抵壓頭105之抵壓力的緩衝材111之應力S集中於晶片堆疊零件108的外周部而產生破裂之虞。又，若晶片基板109產生破裂，則有損各晶片基板109之層間之連接可靠性。
進而，經由熱硬化性之接著劑積層晶片基板109並利用加熱抵壓頭7自上表面一併進行熱加壓，藉此製造晶片堆疊零件108，採用該方法之情形時，亦有如下產生破裂之虞：加熱抵壓頭105之抵壓力容易集中於金屬凸塊110上，因該壓力集中而於晶片基板109中產生破裂，或有介隔緩衝材111加熱抵壓頭105之抵壓力集中於晶片堆疊零件108之外周部而產生破裂。
並且，若晶片堆疊零件108產生破裂，則由此導致損害晶片基板109之層間連接之可靠性。
因此，本發明之目的在於提供一種可防止電子零件之破裂之連接裝置、連接構造體之製造方法、晶片堆疊零件之製造方法及電子零件之構裝方法。
為解決上述課題，本發明之連接裝置係具有如下部分：載置部，載置有與熱硬化性之接著劑層積層之電子零件；加熱抵壓頭，對上述電子零件進行加熱抵壓；第1彈 性體，配置於上述電子零件與上述加熱抵壓頭之抵壓面之間，抵壓上述電子零件之上表面；及支撐構件，配置於上述電子零件之周圍，並且支撐上述第1彈性體。
又，本發明之連接構造體之製造方法係具有如下步驟：於載置部載置構裝有電子零件之基板之步驟；經由熱硬化性之接著劑將電子零件搭載於上述載置部所載置之基板的步驟；及於上述電子零件之上表面側配置第1彈性體，並且於上述電子零件之周圍配置支撐上述第1彈性體之支撐構件，介隔上述第1彈性體利用加熱抵壓頭對上述電子零件進行熱加壓而將其構裝於上述基板的步驟。
又，本發明之晶片堆疊零件之製造方法係由複數個晶片基板積層且各晶片基板電性、機械性地連接而成之晶片堆疊零件的製造方法，其具有如下步驟：經由熱硬化性之接著劑將設置於晶片基板之一面的凸塊載置於設置於鄰接之晶片基板之另一面的電極上，藉此形成積層有複數個晶片基板之晶片積層體的步驟；及於上述晶片積層體之上表面側配置第1彈性體，並且於上述晶片積層體之周圍配置支撐上述第1彈性體之支撐構件，介隔上述第1彈性體利用加熱抵壓頭對上述晶片積層體進行熱加壓的步驟。
又，本發明之電子零件之構裝方法係具有如下步驟：於載置部載置構裝有電子零件之基板之步驟；經由熱硬化性之接著劑將電子零件搭載於上述載置部所載置之基板的步驟；及於上述電子零件之上表面側配置第1彈性體，並且於上述電子零件之周圍配置支撐上述第1彈性體之支撐 構件，介隔上述第1彈性體利用加熱抵壓頭對上述電子零件進行熱加壓的步驟。
根據本發明，藉由具備第1彈性體及支撐構件，而無論有無凸塊均可對電子零件之上表面均勻地進行熱加壓，並且可防止第1彈性體之壓力集中於電子零件之外周部；並且該第1彈性體係配置於電子零件與加熱抵壓頭之抵壓面之間，抵壓電子零件之上表面；該支撐構件係配置於電子零件之周圍並且支撐第1彈性體。因此，根據本發明，可防止電子零件之破裂。
以下，對應用本發明之連接裝置、連接構造體之製造方法、晶片堆疊零件之製造方法及電子零件之構裝方法，一面參照圖式一面進行詳細說明。再者，本發明並不僅限定於以下之實施形態，當然亦可於不脫離本發明之主旨之範圍內進行各種變更。又，圖式為示意性者，存在各尺寸之比率等與現實不同之情況。具體之尺寸等應考慮以下之說明進行判斷。又，當然包括於圖式相互間相互之尺寸關係或比率不同之部分。
[連接裝置]
應用本發明之連接裝置1係用於製造於配線基板3上構裝有表面構裝零件2之連接構造體4者，或用於製造經由接著劑積層有晶片基板11之晶片積層體12的各晶片基板11電性、機械性地連接而成的晶片堆疊零件10者。作 為表面構裝零件2，例如存在IC或LSI等封裝零件、電阻或電容器等晶片零件、或者使用TSV(Through Silicon Via)技術等之晶片堆疊零件10等，上述TSV技術係立體地配置半導體晶片等晶片基板11，並設置於半導體晶片上之小孔中填充金屬，藉此將重疊堆積成夾層狀之複數個晶片基板電性連接。本申請案中，將搭載於配線基板3之表面構裝零件2及晶片積層體12合稱電子零件。
該連接裝置1係如圖1所示，具有：載置部5，載置有構裝表面構裝零件2之配線基板3或晶片積層體12；加熱抵壓頭7，對經由熱硬化性之接著劑6載置於配線基板3之表面構裝零件2或晶片積層體12進行加熱抵壓；第1彈性體8，配置於表面構裝零件2或晶片積層體12與加熱抵壓頭7之抵壓面之間，抵壓表面構裝零件2或晶片積層體12之上表面；第2彈性體9，配置於表面構裝零件2或晶片積層體12之周圍，並且為支撐第1彈性體8之支撐構件。
載置部5係例如由板狀之陶瓷所形成，且於上表面載置配線基板3或晶片積層體12。
加熱抵壓頭7係藉由對表面構裝零件2或晶片積層體12進行熱加壓，而使接著劑6熱硬化，使表面構裝零件2與配線基板3之電極電性、機械性地連接，或者使晶片積層體12之各晶片基板11間電性、機械性地連接。加熱抵壓頭7內藏加熱器並且由未圖示之升降機構所支撐，藉此，相對於載置部5熱加壓面7a可自由接近或分離，且能以特定溫度及壓力對經由接著劑6搭載於載置部5上所載置之 配線基板3的表面構裝零件2、或於載置部5上所載置之晶片積層體12進行特定時間之熱加壓。
[第1彈性體8]
第1彈性體8係藉由夾設於加熱抵壓頭7之熱加壓面與表面構裝零件2或晶片積層體12之上表面之間，吸收表面構裝零件2或晶片積層體12之中央部與外周部之壓力差，或者吸收形成凸塊之區域與未形成凸塊之區域的壓力差，而對表面構裝零件2或晶片積層體12進行均勻熱加壓。
第1彈性體8例如由聚矽氧樹脂等彈性體所構成，且整體形成為大致矩形板狀。又，第1彈性體8具有可覆蓋表面構裝零件2或晶片積層體12之上表面的面積，且外周部由配設於表面構裝零件2或晶片積層體12之周圍的第2彈性體9進行支撐。
[第2彈性體9]
第2彈性體9係配置於表面構裝零件2或晶片積層體12之周圍，並且為支撐第1彈性體8之支撐構件，其防止經加熱抵壓頭7熱加壓之第1彈性體8之壓力集中於表面構裝零件2或晶片積層體12之外周部。
第2彈性體9例如由聚矽氧樹脂等彈性體所構成，且整體形成為上下開放之中空狀，以包圍表面構裝零件2或晶片積層體12之周圍之方式進行配置。又，第2彈性體9形成為與表面構裝零件2或晶片積層體12大致相同之高度，藉此支撐抵壓表面構裝零件2或晶片積層體12之第1彈性體8的外周部。連接裝置1使用可於上下方向伸縮之 第2彈性體9作為支撐構件，藉此第2彈性體9可吸收高度方向之誤差，可不結合表面構裝零件2或晶片積層體12高精密度地控制高度。再者，連接裝置1若可高精密度地使高度合於表面構裝零件2或晶片積層體12而形成，則未必需要使用彈性體形成支撐構件。
如上所述，連接裝置1具備如下：第1彈性體8，配置於表面構裝零件2或晶片積層體12等電子零件與加熱抵壓頭7之熱加壓面7a之間，抵壓電子零件之上表面；及第2彈性體9，配置於電子零件之周圍，並且為支撐第1彈性體8之支撐構件；藉此無論有無凸塊均可對表面構裝零件2或晶片積層體12之上表面均勻地進行熱加壓，並且可防止第1彈性體8之壓力集中於電子零件之外周部。
特別是於構裝晶片堆疊零件10作為電子零件時，於晶片基板11凸出形成有凸塊11a，因此有如下產生破裂之虞：加熱抵壓頭7之抵壓力容易集中於凸塊11a，由該壓力集中而於晶片基板11中產生破裂。又，因積層有薄型之晶片基板11，故若壓力集中於外周部，則晶片基板11容易產生破裂。
然而，連接裝置1中，藉由介隔第1彈性體8進行熱加壓而可分散集中於凸塊11a之壓力，又，藉由利用第2彈性體9支撐第1彈性體8，而可防止第1彈性體8之朝晶片堆疊零件10之外周部的壓力集中，可防止晶片基板11之破裂並且提高各晶片基板11間之連接可靠性。
[硬度]
連接裝置1中，較佳為將第2彈性體9之硬度設為第1彈性體8之硬度以上。藉此，可利用第2彈性體9確實地支撐第1彈性體8，有效地防止第1彈性體8之朝晶片積層體12之外周部的壓力集中。另一方面，於第2彈性體9之硬度未達第1彈性體8之硬度時，第2彈性體9被抵壓至第1彈性體8，而無法防止第1彈性體8之朝表面構裝零件2或晶片積層體12之外周部的壓力集中。
又，第1彈性體8與第2彈性體9之硬度較佳為於利用JIS K 6253所規定之A型硬度計之測定中設為20~60之範圍。若第1彈性體8與第2彈性體9之硬度小於20，則無法吸收加熱抵壓頭7之壓力，且無法利用第2彈性體9支撐第1彈性體8。又，若第1彈性體8與第2彈性體9之硬度變得大於60，則第1彈性體8即便抵接晶片堆疊零件10之上表面亦不彎曲，無法分散集中於晶片基板11之凸塊11a之壓力。
[接著劑]
繼而，對藉由利用加熱抵壓頭7進行熱加壓而將表面構裝零件2連接於配線基板3上、或將晶片基板11間連接之接著劑6進行說明。接著劑6例如，係如圖2所示，由含有膜形成樹脂、熱硬化性樹脂、潛伏性硬化劑、矽烷偶合劑等通常之黏合劑(接著劑)23所構成，形成為膜狀或膏狀。以下，以成形為膜狀之絕緣性接著膜17(NCF(Non Conductive Film))為例進行說明。
該絕緣性接著膜17係利用加熱抵壓頭7進行熱加壓， 藉此於配線基板3之連接電極與表面構裝零件2之電極接觸之狀態下黏合劑23發生硬化，藉此謀求兩電極之電性、機械性連接。或者絕緣性接著膜17係夾設於構成晶片積層體12之複數個晶片基板11之間，利用加熱抵壓頭7進行熱加壓，藉此於晶片基板11之層間經凸塊11a連接之狀態下發生硬化，藉此謀求複數個晶片基板11之電性、機械性連接。
該絕緣性接著膜17係如圖2所示，藉由將黏合劑23所構成之熱硬化性接著材組成物塗佈於剝離膜25上而形成於剝離膜25上。剝離膜25係例如於PET(Poly Ethylene Terephthalate)、OPP(Oriented Polypropylene)、PMP(Poly-4-methlpentene-1)、PTFE(Polytetrafluoroethylene)等塗佈聚矽氧等剝離劑而成，可維持絕緣性接著膜17之形狀。
作為黏合劑23所含有之膜形成樹脂，較佳為平均分子量為10000~80000左右之樹脂。作為膜形成樹脂，可列舉：環氧樹脂、改質環氧樹脂、胺酯樹脂、苯氧基樹脂等各種樹脂。其中，就膜形成狀態、連接可靠性等觀點而言，特佳為苯氧基樹脂。
作為熱硬化性樹脂，並無特別限定，例如可列舉市售之環氧樹脂、丙烯酸系樹脂等。
作為環氧樹脂，並無特別限定，例如可列舉：萘型環氧樹脂、聯苯型環氧樹脂、苯酚酚醛清漆(phenol novolac)型環氧樹脂、雙酚型環氧樹脂、茋(stilbene)型環氧樹脂、 三酚甲烷(triphenolmethane)型環氧樹脂、苯酚芳烷基(phenol aralkyl)型環氧樹脂、萘酚型環氧樹脂、二環戊二烯型環氧樹脂、三苯甲烷型環氧樹脂等。該等可單獨，亦可為2種以上之組合。
作為丙烯酸系樹脂，並無特別限制，可根據目的適當選擇丙烯酸系化合物、液狀丙烯酸酯等。例如可列舉：丙烯酸甲酯、丙烯酸乙酯、丙烯酸異丙酯、丙烯酸異丁酯、環氧丙烯酸酯、乙二醇二丙烯酸酯、二乙二醇二丙烯酸酯、三羥甲基丙烷三丙烯酸酯、二羥甲基三環癸烷二丙烯酸酯、伸丁二醇四丙烯酸酯(tetramethylene glycol tetraacrylate)、2-羥基-1,3-二丙烯醯氧基丙烷、2,2-雙[4-(丙烯醯氧基甲氧基)苯基]丙烷、2,2-雙[4-(丙烯醯氧基乙氧基)苯基]丙烷、丙烯酸二環戊烯酯、丙烯酸三環癸酯、三(丙烯醯氧基乙基)異氰尿酸酯、丙烯酸胺基甲酸酯、環氧丙烯酸酯等。再者，亦可使用將丙烯酸酯設為甲基丙烯酸酯者。該等可單獨使用1種，亦可併用2種以上。
作為潛伏性硬化劑，並無特別限定，例如可列舉加熱硬化型、UV硬化型等各種硬化劑。潛伏性硬化劑於通常情況下不會反應，而係藉由熱、光、加壓等根據用途而選擇之各種觸發進行活化而開始反應。熱活性型潛伏性硬化劑之活化方法中，存在如下方法：藉由利用加熱之解離反應等而生成活性物質(陽離子或陰離子、自由基)之方法；於室溫附近穩定分散於環氧樹脂中且於高溫下與環氧樹脂 相溶、溶解而開始硬化反應的方法；於高溫下溶出分子篩填充型硬化劑而開始硬化反應之方法；利用微膠囊之溶出、硬化方法等。作為熱活性型潛伏性硬化劑，有咪唑系、醯肼系、三氟化硼-胺錯合物、鋶鹽、胺化醯亞胺、聚胺鹽、二氰二胺等或該等之改質物，該等可單獨，亦可為2種以上之混合體。其中，較佳為微膠囊型咪唑系潛伏性硬化劑。
作為矽烷偶合劑，並無特別限定，例如可列舉環氧系、胺基系、巰基/硫醚系、脲基(ureide)系等。藉由添加矽烷偶合劑，提高有機材料與無機材料之界面的接著性。
再者，於將表面構裝零件2構裝於配線基板3之步驟中，亦可使用圖3所示之於黏合劑23中分散有導電性粒子24之異向性導電膜(ACF(Anisotropic Conductive Film))18來代替絕緣性接著膜17。該情形時，於表面構裝零件2及配線基板3之各電極之間夾著導電性粒子24，藉由於該狀態下黏合劑23進行熱硬化而謀求兩電極之電性、機械性連接。
作為導電性粒子24，可列舉於異向性導電膜18中使用之公知之任一導電性粒子。作為導電性粒子24，例如可列舉：鎳、鉄、銅、鋁、錫、鉛、鉻、鈷、銀、金等各種金屬或金屬合金之粒子，於金屬氧化物、碳、石墨、玻璃、陶瓷、塑膠等粒子之表面上塗佈有金屬者，或於該等粒子之表面上進而塗佈有絕緣薄膜者等。於樹脂粒子之表面塗佈有金屬者之情形時，作為樹脂粒子，例如可列舉：環氧樹脂、酚系樹脂、丙烯酸系樹脂、丙烯腈-苯乙烯(AS)樹 脂、苯胍嗪樹脂、二乙烯苯系樹脂、苯乙烯系樹脂等之粒子。
再者，就操作容易性、保存穩定性等觀點而言，絕緣性接著膜17或異向性導電膜18亦可設為於與積層有剝離膜25之面相反之面側亦設置剝離膜的構成。又，絕緣性接著膜17或異向性導電膜18之形狀並無特別限定，例如可如圖2所示，設為可捲繞於捲取轉盤26之長條膠帶形狀，並且可切割特定長度來使用。
又，上述之實施形態中，作為接著劑，以黏合劑23中適當含有導電性粒子24之熱硬化性樹脂組成物成形為膜狀的接著膜為例進行說明，但本發明之接著劑並不限定於此，例如可設為如下構成：分別設置2層以上之僅由黏合劑23所構成之絕緣性接著劑層、及由含有導電性粒子24之黏合劑23所構成之導電性粒子含有層的構成。又，接著劑並不限定於此種膜成形而成之接著膜，例如亦可設為僅由絕緣性接著劑組成物所構成之絕緣性接著糊，或使導電性粒子分散於絕緣性接著劑組成物之導電性接著糊。本發明之接著劑亦包含上述任一形態。
[製造步驟1]
繼而，對使用連接裝置1製造與配線基板3連接之表面構裝零件2之連接構造體4的步驟進行說明。本實施形態中，對使用晶片堆疊零件10作為表面構裝零件2之情形進行說明。
首先，於連接裝置1之載置部5載置配線基板3。此時， 配線基板3是以加熱抵壓頭7接近配線基板3搭載有該晶片堆疊零件10之位置之正上方的方式對準位置來載置。
繼而，將作為接著劑6之絕緣性接著膜17預壓接於載置於載置部5之配線基板3。絕緣性接著膜17係自轉盤26抽出，切割成特定長度後，配置於配線基板3之搭載晶片堆疊零件10之位置，經加熱抵壓頭7以黏合劑23顯示流動性但未熱硬化程度之溫度、壓力、時間進行熱加壓。其後，晶片堆疊零件10藉由自動搭載機等藉由絕緣性接著膜17搭載於配線基板3之特定位置。
繼而，如圖4所示，以包圍晶片堆疊零件10之周圍的方式配置作為支撐構件之第2彈性體9，以覆蓋晶片堆疊零件10上、且第2彈性體9支撐外周部之方式配置第1彈性體8，介隔該第1彈性體8，將加熱至特定溫度之加熱抵壓頭7以特定壓力對晶片堆疊零件10進行特定時間之熱加壓。
此時，連接裝置1介隔具有上述特定彈性率之第1彈性體8對晶片堆疊零件10進行熱加壓，藉此可防止朝設置於晶片基板11上之凸塊11a之壓力集中。又，連接裝置1利用具有第1彈性體8之硬度以上之硬度的第2彈性體9支撐第1彈性體8之外周部，因此可防止第1彈性體8之壓力集中於晶片堆疊零件10之外周部。因此，連接裝置1可藉由第1彈性體8對晶片堆疊零件10之上表面均勻地進行抵壓，防止晶片基板11之破裂，又可防止由破裂引起之晶片基板11間之連接可靠性之下降，或晶片堆疊零件10 與配線基板3之連接可靠性之下降。
藉此，晶片堆疊零件10之電極與配線基板3之電極接觸，於該狀態下絕緣性接著膜17之黏合劑23進行熱硬化，藉此製造配線基板3上構裝有晶片堆疊零件10之連接構造體4。
再者，本實施形態中，使用晶片堆疊零件10作為表面構裝零件2，但作為表面構裝零件2，例如亦可構裝IC或LSI等封裝零件、電阻或電容器等晶片零件。又，於配線基板3之電極與表面構裝零件2之電極的連接中，亦可使用異向性導電膜18或糊狀之接著劑6。
[製造步驟2]
繼而，對使用連接裝置1製造晶片堆疊零件10之步驟進行說明。首先，作為利用連接裝置1之熱加壓步驟之前步驟，將複數個晶片基板11以相互之凸塊11a彼此可接觸之方式對準位置，形成經由絕緣性接著膜17積層之晶片積層體12。
繼而，於連接裝置1之載置部5載置晶片積層體12。此時，晶片積層體12係以加熱抵壓頭7來到正上方之方式對準位置而載置。
繼而，如圖5所示，以包圍晶片積層體12周圍之方式配置作為支撐構件之第2彈性體9，以覆蓋晶片積層體12上、且由第2彈性體9支撐外周部之方式配置第1彈性體8，介隔該第1彈性體8將加熱至特定溫度之加熱抵壓頭7以特定壓力對晶片積層體12進行特定時間之熱加壓。
此時，連接裝置1介隔具有上述特定彈性率之第1彈性體8對晶片積層體12進行熱加壓，藉此可防止朝設置於晶片基板11之凸塊11a的壓力集中。又，連接裝置1利用具有第1彈性體8之硬度以上之硬度的第2彈性體9支撐第1彈性體8之外周部，因此可防止第1彈性體8之壓力集中於晶片積層體12之外周部。因此，連接裝置1可藉由第1彈性體8對晶片積層體12之上表面均勻地進行抵壓，防止晶片基板11之破裂，又可防止由晶片基板11之破裂引起之晶片積層體12之晶片基板11間之連接可靠性的下降。
藉此，構成晶片積層體12之各晶片基板11之凸塊11a彼此連接，於該狀態下絕緣性接著膜17之黏合劑23進行熱硬化，製造晶片堆疊零件10。
又，亦可於半導體晶圓或配線基板3上進行該晶片堆疊零件10之製造步驟。由於係在配線基板3上進行晶片堆疊零件10之製造步驟，故亦可同時進行晶片堆疊零件10之製造與晶片堆疊零件10之構裝。該情形時，於晶片積層體12之最下層之晶片基板11與配線基板3之特定位置之間，設置絕緣性接著膜17或異向性導電膜18等接著劑6，藉由加熱抵壓頭7一併進行熱加壓。藉此，可藉由熱加壓晶片積層體12而製造在晶片基板11之層間連接用之凸塊11a連接之狀態下各晶片基板11連接而成的晶片堆疊零件10，同時製造於配線基板3構裝有該晶片堆疊零件10之連接構造體4。
[其他實施例]
又，如圖6所示，連接裝置1亦可根據表面構裝零件2或晶片積層體12之數量將第2彈性體9形成為格子狀，藉此同時熱加壓複數個電子零件。於形成為格子狀之第2彈性體9之分割區域內配置表面構裝零件2或晶片積層體12。自上表面抵壓表面構裝零件2或晶片積層體12之第1彈性體8係覆蓋形成為格子狀之第2彈性體9的各格子上，並且由第2彈性體9格子狀地支撐包含外周部之整面。由第2彈性體9所構成之格子形狀可為1列複數行、複數列複數行之任一者。
[實施例]
繼而，對本發明之實施例進行說明。實施例中準備第1、第2彈性體8、9之各硬度經改變之實施例及比較例，使用各實施例及比較例之第1、第2彈性體8、9，連接裝置1中對經由絕緣性接著膜17積層有晶片基板11之晶片積層體12進行熱加壓，製造晶片堆疊零件10。製造後，評價晶片堆疊零件10之破裂(龜裂)之產生、及晶片基板11間之連接可靠性。
有無產生破裂(龜裂)係藉由目視進行確認。連接可靠性係將晶片堆疊零件10之初始導通電阻與經PCT試驗(壓力鍋試驗(Pressure Cooker Test)：130℃ 85%RH 300 h)及TCT試驗(溫度循環試驗(Temperature Cycle Test)：-55℃ 30 min125℃ 30 min 500循環)後之導通電阻值進行比較，將導通電阻值上升30%以上者記作NG(×)。
各實施例及比較例之第1、第2彈性體8、9均使用聚矽氧橡膠而形成。絕緣性接著膜17係使用環氧系硬化樹脂。晶片堆疊零件10係積層4層厚度50 μm之晶片基板11。各晶片基板11上以25×2行(間距寬40 μm)形成有層間連接用之凸塊。
利用加熱抵壓頭7的晶片積層體12之熱加壓條件為230℃、10 N、30 sec。實施例及比較例之第1、第2彈性體8、9之橡膠硬度均為利用JIS K 6253所規定之A型硬度計之測定值。
實施例1中，第1彈性體8之橡膠硬度為20，相對於此將第2彈性體9之橡膠硬度設為20。
實施例2中，第1彈性體8之橡膠硬度為20，相對於此將第2彈性體9之橡膠硬度設為40。
實施例3中，第1彈性體8之橡膠硬度為20，相對於此將第2彈性體9之橡膠硬度設為60。
實施例4中，第1彈性體8之橡膠硬度為20，相對於此將第2彈性體9之橡膠硬度設為80。
比較例1中，第1彈性體8之橡膠硬度為40，相對於此將第2彈性體9之橡膠硬度設為20。
實施例5中，第1彈性體8之橡膠硬度為40，相對於此將第2彈性體9之橡膠硬度設為40。
實施例6中，第1彈性體8之橡膠硬度為40，相對於此將第2彈性體9之橡膠硬度設為60。
實施例7中，第1彈性體8之橡膠硬度為40，相對於 此將第2彈性體9之橡膠硬度設為80。
比較例2中，第1彈性體8之橡膠硬度為60，相對於此將第2彈性體9之橡膠硬度設為20。
比較例3中，第1彈性體8之橡膠硬度為60，相對於此將第2彈性體9之橡膠硬度設為40。
實施例8中，第1彈性體8之橡膠硬度為60，相對於此將第2彈性體9之橡膠硬度設為60。
實施例9中，第1彈性體8之橡膠硬度為60，相對於此將第2彈性體9之橡膠硬度設為80。
比較例4中，第1彈性體8之橡膠硬度為80，相對於此將第2彈性體9之橡膠硬度設為20。
比較例5中，第1彈性體8之橡膠硬度為80，相對於此將第2彈性體9之橡膠硬度設為40。
比較例6中，第1彈性體8之橡膠硬度為80，相對於此將第2彈性體9之橡膠硬度設為60。
比較例7中，第1彈性體8之橡膠硬度為80，相對於此將第2彈性體9之橡膠硬度設為80。
將測定結果示於表1。如表1所示，實施例1~9中，均為第2彈性體9之硬度為第1彈性體8之硬度以上，因此由第2彈性體9支撐第1彈性體8，藉此可分散集中於凸 塊11a之壓力，並且可防止第1彈性體8之朝晶片積層體12之外周部的壓力集中，且即便於積層有厚度50 μm之極薄晶片基板11之晶片堆疊零件10的製造中，亦可防止破裂。又，經PCT試驗及TCT試驗後，導通電阻值之上升率亦未達30%，各晶片基板11之層間連接亦良好。
另一方面，比較例1~3中，均為第2彈性體9之硬度低於第1彈性體8之硬度，無法利用第2彈性體9防止第1彈性體8之朝晶片積層體12之外周部的壓力集中，產生破裂。又，經PCT試驗及TCT試驗後之導通電阻值之上升率為30%以上。因此，對於積層厚度為50 μm之極薄晶片基板11之晶片堆疊零件10的製造而言並不充分。
又，比較例4~7中，第1彈性體8之橡膠硬度較硬為80，因此無法利用第1彈性體8分散集中於凸塊11a之壓力，且由集中於凸塊11a之壓力所引起破裂產生。又，經PCT試驗及TCT試驗後之導通電阻值之上升率為30%以上。因此，對於積層厚度為50 μm之極薄晶片基板11之晶片堆疊零件10的製造而言並不充分。
1‧‧‧連接裝置
2‧‧‧表面構裝零件
3‧‧‧配線基板
4‧‧‧連接構造體
5‧‧‧載置部
6‧‧‧接著劑
7‧‧‧加熱抵壓頭
7a‧‧‧抵壓面
8‧‧‧第1彈性體
9‧‧‧第2彈性體
10‧‧‧晶片堆疊零件
11‧‧‧晶片基板
11a‧‧‧凸塊
12‧‧‧晶片積層體
17‧‧‧絕緣性接著膜
18‧‧‧異向性導電膜
23‧‧‧黏合劑
24‧‧‧導電性粒子
25‧‧‧剝離膜
26‧‧‧轉盤
101‧‧‧基板
102‧‧‧載置部
103‧‧‧異向性導電膜
104‧‧‧電子零件
104a‧‧‧電極
105‧‧‧加熱抵壓頭
106‧‧‧緩衝材
107‧‧‧電子零件
108‧‧‧晶片堆疊零件
109‧‧‧晶片基板
110‧‧‧金屬凸塊
圖1係表示應用本發明之連接裝置之剖面圖。
圖2係表示絕緣性接著膜之剖面圖。
圖3係表示異向性導電膜之剖面圖。
圖4係表示表面構裝零件之構裝步驟之剖面圖。
圖5係表示晶片堆疊零件之製造步驟之剖面圖。
圖6係表示第1、第2彈性體之其他構成之立體圖。
圖7係表示先前之構裝裝置之側視圖。
圖8係表示使用先前之緩衝材之構裝裝置之剖面圖。
圖9係表示晶片堆疊零件之構裝步驟之剖面圖。
2‧‧‧表面構裝零件
3‧‧‧配線基板
5‧‧‧載置部
6‧‧‧接著劑
7‧‧‧加熱抵壓頭
7a‧‧‧抵壓面
8‧‧‧第1彈性體
9‧‧‧第2彈性體
11‧‧‧晶片基板
11a‧‧‧凸塊
12‧‧‧晶片積層體

Claims (17)

  1. 一種連接裝置，具有：載置部，載置有與熱硬化性之接著劑層積層之電子零件；加熱抵壓頭，對上述電子零件進行加熱抵壓；第1彈性體，配置於上述電子零件與上述加熱抵壓頭之抵壓面之間，抵壓上述電子零件之上表面；及支撐構件，配置於上述電子零件之周圍，並且，於上述第1彈性體抵壓上述電子零件之上表面時支撐上述第1彈性體之下表面且未抵壓上述電子零件。
  2. 如申請專利範圍第1項之連接裝置，其中，上述支撐構件為具有上述第1彈性體之硬度以上之硬度的第2彈性體。
  3. 如申請專利範圍第2項之連接裝置，其中，上述第1彈性體與上述第2彈性體之硬度於利用JIS K 6253所規定之A型硬度計之測定中處於20~60之範圍。
  4. 如申請專利範圍第1項之連接裝置，其中，藉由將上述支撐構件設成格子狀，而形成有載置上述電子零件之複數個區域。
  5. 一種連接構造體之製造方法，具有以下步驟：於載置部載置構裝有電子零件之基板之步驟；經由熱硬化性之接著劑將電子零件搭載於上述載置部所載置之基板的步驟；及於上述電子零件之上表面側配置第1彈性體，並且， 於上述電子零件之周圍配置支撐上述第1彈性體之下表面的支撐構件，一面利用上述支撐構件支撐上述第1彈性體一面介隔上述第1彈性體利用加熱抵壓頭對上述電子零件之上表面進行熱加壓而將其構裝於上述基板的步驟。
  6. 如申請專利範圍第5項之連接構造體之製造方法，其中，上述支撐構件為具有上述第1彈性體之硬度以上之硬度的第2彈性體。
  7. 如申請專利範圍第6項之連接構造體之製造方法，其中，上述第1彈性體與上述第2彈性體之硬度於利用JIS K 6253所規定A型硬度計之測定中處於20~60之範圍。
  8. 如申請專利範圍第7項之連接構造體之製造方法，其中，上述電子零件為由複數個晶片基板積層且各晶片基板電性、機械性地連接而成之晶片堆疊零件。
  9. 如申請專利範圍第7項之連接構造體之製造方法，其中，上述電子零件為經由熱硬化性之接著劑積層有複數個晶片基板而成之晶片積層體。
  10. 如申請專利範圍第5項之連接構造體之製造方法，其中，藉由上述支撐構件而分割為載置上述電子零件之複數個區域，並且同時將複數個上述電子零件構裝。
  11. 一種晶片堆疊零件之製造方法，該晶片堆疊零件係由複數個晶片基板積層且各晶片基板電性、機械性地連接而成者，該製造方法具有如下步驟：經由熱硬化性之接著劑將設置於晶片基板之一面的凸塊載置於設於鄰接之晶片基板之另一面的電極上，藉此形 成積層有複數個晶片基板之晶片積層體的步驟；及於上述晶片積層體之上表面側配置第1彈性體，並且，於上述晶片積層體之周圍配置支撐上述第1彈性體之下表面的支撐構件，一面利用上述支撐構件支撐上述第1彈性體一面介隔上述第1彈性體利用加熱抵壓頭對上述晶片積層體之上表面進行熱加壓的步驟。
  12. 如申請專利範圍第11項之晶片堆疊零件之製造方法，其中，上述支撐構件為具有上述第1彈性體之硬度以上之硬度的第2彈性體。
  13. 如申請專利範圍第12項之晶片堆疊零件之製造方法，其中，上述第1彈性體與上述第2彈性體之硬度於利用JIS K 6253所規定之A型硬度計之測定中處於20~60之範圍。
  14. 如申請專利範圍第13項之晶片堆疊零件之製造方法，其中，上述晶片積層體之至少1層含有厚度100μm以下之晶片基板。
  15. 如申請專利範圍第11項之晶片堆疊零件之製造方法，其中，藉由上述支撐構件而分割為載置上述電子零件之複數個區域，並且同時製造複數個上述晶片堆疊零件。
  16. 如申請專利範圍第11項之晶片堆疊零件之製造方法，其中，經由熱硬化性之接著劑將上述晶片積層體載置於基板或晶圓上，一併進行熱加壓。
  17. 一種電子零件之構裝方法，具有如下步驟：將構裝有電子零件之基板載置於載置部之步驟； 經由熱硬化性之接著劑將電子零件搭載於上述載置部所載置之基板的步驟；及於上述電子零件之上表面側配置第1彈性體，並且於上述電子零件之周圍配置支撐上述第1彈性體之下表面的支撐構件，一面利用上述支撐構件支撐上述第1彈性體一面介隔上述第1彈性體利用加熱抵壓頭對上述電子零件之上表面進行熱加壓的步驟。
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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9543197B2 (en) * 2012-12-19 2017-01-10 Intel Corporation Package with dielectric or anisotropic conductive (ACF) buildup layer
JP2015053406A (ja) * 2013-09-09 2015-03-19 株式会社東芝 半導体装置
KR101681024B1 (ko) * 2015-10-29 2016-12-01 한국기계연구원 웨이퍼 본딩 장치
CN106409727B (zh) * 2016-10-13 2019-04-16 中国航空工业集团公司洛阳电光设备研究所 一种fp芯片整形装置及整形方法
US11152328B2 (en) * 2018-12-13 2021-10-19 eLux, Inc. System and method for uniform pressure gang bonding
US11004828B2 (en) * 2019-08-28 2021-05-11 Micron Technology, Inc. Methods and apparatus for integrated gang bonding and encapsulation of stacked microelectronic devices
KR20210037431A (ko) * 2019-09-27 2021-04-06 삼성전자주식회사 본딩 헤드, 이를 포함하는 다이 본딩 장치 및 이를 이용한 반도체 패키지의 제조 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2902002A1 (de) * 1979-01-19 1980-07-31 Gerhard Krause Dreidimensional integrierte elektronische schaltungen
US4903885A (en) * 1988-03-03 1990-02-27 Siemens Aktiengesellschaft Method and apparatus for fastening electronic components to substrates
JP2009016544A (ja) * 2007-07-04 2009-01-22 Panasonic Corp 半導体素子実装装置および実装方法
JP2010166097A (ja) * 2010-04-28 2010-07-29 Sony Chemical & Information Device Corp 接続方法、接続装置及び接続方法を用いて得られる接続構造体

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3921459B2 (ja) * 2003-07-11 2007-05-30 ソニーケミカル＆インフォメーションデバイス株式会社 電気部品の実装方法及び実装装置
JP4074862B2 (ja) * 2004-03-24 2008-04-16 ローム株式会社 半導体装置の製造方法、半導体装置、および半導体チップ
EP1845556A4 (en) 2005-02-02 2010-02-10 Sony Chem & Inf Device Corp ATTACHING DEVICE FOR ELECTRICAL COMPONENTS
JP4832107B2 (ja) 2006-02-23 2011-12-07 ソニーケミカル＆インフォメーションデバイス株式会社 実装方法
US7648856B2 (en) 2006-08-28 2010-01-19 Micron Technology, Inc. Methods for attaching microfeature dies to external devices
TWI414580B (zh) * 2006-10-31 2013-11-11 Sumitomo Bakelite Co 黏著帶及使用該黏著帶而成之半導體裝置
JP5361134B2 (ja) 2007-02-19 2013-12-04 パナソニック株式会社 加圧ヘッドおよび部品圧着装置
JP4361572B2 (ja) * 2007-02-28 2009-11-11 株式会社新川 ボンディング装置及び方法
US7850060B2 (en) * 2007-04-05 2010-12-14 John Trezza Heat cycle-able connection
US8278142B2 (en) * 2008-05-22 2012-10-02 Texas Instruments Incorporated Combined metallic bonding and molding for electronic assemblies including void-reduced underfill
JP2011035283A (ja) * 2009-08-05 2011-02-17 Panasonic Corp 半導体装置およびその製造方法
JP2014060241A (ja) * 2012-09-18 2014-04-03 Toray Ind Inc 半導体装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2902002A1 (de) * 1979-01-19 1980-07-31 Gerhard Krause Dreidimensional integrierte elektronische schaltungen
US4903885A (en) * 1988-03-03 1990-02-27 Siemens Aktiengesellschaft Method and apparatus for fastening electronic components to substrates
JP2009016544A (ja) * 2007-07-04 2009-01-22 Panasonic Corp 半導体素子実装装置および実装方法
JP2010166097A (ja) * 2010-04-28 2010-07-29 Sony Chemical & Information Device Corp 接続方法、接続装置及び接続方法を用いて得られる接続構造体

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