WO2013069522A1 - 接続装置、接続構造体の製造方法、チップスタック部品の製造方法及び電子部品の実装方法 - Google Patents

接続装置、接続構造体の製造方法、チップスタック部品の製造方法及び電子部品の実装方法 Download PDF

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WO2013069522A1
WO2013069522A1 PCT/JP2012/078237 JP2012078237W WO2013069522A1 WO 2013069522 A1 WO2013069522 A1 WO 2013069522A1 JP 2012078237 W JP2012078237 W JP 2012078237W WO 2013069522 A1 WO2013069522 A1 WO 2013069522A1
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elastic body
chip
electronic component
component
manufacturing
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PCT/JP2012/078237
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English (en)
French (fr)
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崇之 齋藤
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デクセリアルズ株式会社
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Priority to US14/355,852 priority Critical patent/US9196599B2/en
Priority to CN201280054633.XA priority patent/CN104025273B/zh
Priority to EP12847519.1A priority patent/EP2779219A4/en
Priority to KR1020147014904A priority patent/KR102028384B1/ko
Publication of WO2013069522A1 publication Critical patent/WO2013069522A1/ja

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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3512—Cracking

Abstract

　電子部品の割れを防止する。熱硬化性の接着剤層（６）と積層された電子部品（２），（１２）が載置される載置部（５）と、電子部品（２），（１２）を加熱押圧する加熱押圧ヘッド（７）と、電子部品（２），（１２）と加熱押圧ヘッド（７）の押圧面（７ａ）との間に配置され、電子部品（２），（１２）の上面を押圧する第１の弾性体（８）と、電子部品（２），（１２）の周囲に配置されるとともに、第１の弾性体を支持する支持部材（９）とを有する。

Description

接続装置、接続構造体の製造方法、チップスタック部品の製造方法及び電子部品の実装方法
　本発明は、接続装置、接続構造体及び電子部品の製造方法、実装方法に関し、特に基板実装部に接着剤を介して配置された電子部品を、緩衝材を介して加熱押圧することにより実装する接続装置、接続構造体及び電子部品の製造方法、実装方法に関する。
　本出願は、日本国において２０１１年１１月７日に出願された日本特許出願番号特願２０１１－２４３５２８を基礎として優先権を主張するものであり、この出願は参照されることにより、本出願に援用される。
　従来、半導体チップ等の電子部品を基板に実装する工法として、基板に異方性導電フィルム（ＡＣＦ：Anisotropic Conductive Film）を介して電子部品を搭載し、加熱押圧ヘッドで電子部品を熱加圧する工法が知られている。この工法に用いられる実装装置１００としては、図７に示すように、基板１０１が載置される載置部１０２と、基板１０１上に異方性導電フィルム１０３を介して搭載された電子部品１０４を熱加圧する加熱押圧ヘッド１０５とを備えたものがある。
　加熱押圧ヘッド１０５は、ヒータが内蔵されるとともに、図示しない昇降機構によって載置部１０２に対して昇降自在とされている。そして、実装装置１００は、基板に異方性導電フィルム１０３を介して電子部品１０４が搭載されると、加熱押圧ヘッド１０５を電子部品の上面に押圧し、所定の温度、所定の圧力で、所定の時間、熱加圧を行う。これにより、実装装置１００は、電子部品１０４を基板１０１に電気的、機械的に接続させる。
　また、実装装置としては、図８に示すように、加熱押圧ヘッド１０５と電子部品１０４との間に緩衝材１０６を介在させたものもある。実装装置１００は、緩衝材１０６を介在させることにより、電子部品１０４の電極１０４ａに圧力が集中することを防止し、電子部品１０４や基板１０１の反りや割れを防止することができる。緩衝材１０６は、シリコンゴム等の弾性体を用いて形成される。また、緩衝材１０６としては、図８（ａ）に示すように、プレート形状をなし、電子部品１０４が搭載された基板１０１の上面全体を押圧する緩衝材１０６ａや、図８（ｂ）に示すように、予め実装されている電子部品１０７の形状に応じた凹部１０８が凹設され、電子部品１０７への圧力集中を効果的に分散させる緩衝材１０６ｂが知られている。
特開２００７－２２７６２２号公報
　しかし、従来の実装装置に用いられる緩衝材１０６は、基板１０１や電子部品１０４の外周部に応力が集中するため、電子部品１０４に割れなどが生じる場合がある。
　また、近年、電子部品として、図９に示すような、厚さ１００μｍ程度のチップ基板を積層して構成されたチップスタック部品１０８が用いられている。このチップスタック部品１０８は、チップ基板１０９に小さな孔を開け、そこにＣｕ等の金属を充填することによって、サンドイッチ状に積み重ねた複数のチップ基板を電気的に接続することにより形成される。
　このようなチップスタック部品１０８を実装する場合、チップ基板表面に金属バンプ１１０が凸出しているため、当該金属バンプ１１０に加熱押圧ヘッド１０５による押圧力が集中しやすく、かかる圧力集中によりチップ基板１０９に割れが生じるおそれがある。特に、厚さが５０μｍ以下といった極薄のチップ基板１０９を用いている場合は、そのリスクが高まる。
　また、このようなチップ基板１０９の割れを回避するために図８（ａ）に示す緩衝材１０６ａや、図９に示すように、チップスタック部品１０８の上面及び側面を支持する弾性体からなる緩衝材１１１を介在させた場合でも、加熱押圧ヘッド１０５の押圧力を受けた緩衝材１１１の応力Ｓがチップスタック部品１０８の外周部に集中し、割れが発生するおそれがある。また、チップ基板１０９の割れが生じると、各チップ基板１０９の層間の接続信頼性が損なわれる。
　さらに、チップ基板１０９を熱硬化性の接着剤を介して積層し、加熱押圧ヘッド７によって上面より一括して熱加圧することによりチップスタック部品１０８を製造する工法を採用する場合にも、金属バンプ１１０に加熱押圧ヘッド１０５による押圧力が集中しやすく、かかる圧力集中によりチップ基板１０９に割れが生じるおそれや、緩衝材１１１を介して加熱押圧ヘッド１０５の押圧力がチップスタック部品１０８の外周部に集中し、割れが発生するおそれがある。
　そして、チップスタック部品１０８に割れが生じると、これに起因してチップ基板１０９の層間接続の信頼性を損なってしまう。
　そこで、本発明は、電子部品の割れを防止することができる接続装置、接続構造体の製造方法、チップスタック部品の製造方法及び電子部品の実装方法を提供することを目的とする。
　上述した課題を解決するために、本発明に係る接続装置は、熱硬化性の接着剤層と積層された電子部品が載置される載置部と、上記電子部品を加熱押圧する加熱押圧ヘッドと、上記電子部品と上記加熱押圧ヘッドの押圧面との間に配置され、上記電子部品の上面を押圧する第１の弾性体と、上記電子部品の周囲に配置されるとともに、上記第１の弾性体を支持する支持部材とを有するものである。
　また、本発明に係る接続構造体の製造方法は、載置部に電子部品が実装される基板を載置する工程と、上記載置部に載置された基板に、熱硬化性の接着剤を介して電子部品を搭載する工程と、上記電子部品の上面側に第１の弾性体を配置するとともに、上記電子部品の周囲に上記第１の弾性体を支持する支持部材を配置し、上記第１の弾性体を介して加熱押圧ヘッドによって上記電子部品を熱加圧し上記基板に実装する工程とを有するものである。
　また、本発明に係るチップスタック部品の製造方法は、チップ基板が複数積層され、各チップ基板が電気的、機械的に接続されたチップスタック部品の製造方法において、チップ基板の一面に設けられたバンプを熱硬化性の接着剤を介して隣接するチップ基板の他面に設けられた電極上に載置することにより、複数のチップ基板が積層されたチップ積層体を形成する工程と、上記チップ積層体の上面側に第１の弾性体を配置するとともに、上記チップ積層体の周囲に上記第１の弾性体を支持する支持部材を配置し、上記第１の弾性体を介して加熱押圧ヘッドによって上記チップ積層体を熱加圧する工程とを有するものである。
　また、本発明に係る電子部品の実装方法は、載置部に電子部品が実装される基板を載置する工程と、上記載置部に載置された基板に、熱硬化性の接着剤を介して電子部品を搭載する工程と、上記電子部品の上面側に第１の弾性体を配置するとともに、上記電子部品の周囲に上記第１の弾性体を支持する支持部材を配置し、上記第１の弾性体を介して加熱押圧ヘッドによって上記電子部品を熱加圧する工程とを有するものである。
　本発明によれば、電子部品と加熱押圧ヘッドの押圧面との間に配置され、電子部品の上面を押圧する第１の弾性体と、電子部品の周囲に配置されるとともに、第１の弾性体を支持する支持部材とを備えることにより、バンプの有無にかかわらず電子部品の上面を均一に熱加圧することができるとともに、第１の弾性体による圧力が電子部品の外周部に集中することを防止することができる。したがって、本発明によれば、電子部品の割れを防止することができる。
図１は、本発明が適用された接続装置を示す断面図である。 図２は、絶縁性接着フィルムを示す断面図である。 図３は、異方性導電フィルムを示す断面図である。 図４は、表面実装部品の実装工程を示す断面図である。 図５は、チップスタック部品の製造工程を示す断面図である。 図６は、第１、第２の弾性体の他の構成を示す斜視図である。 図７は、従来の実装装置を示す側面図である。 図８は、従来の緩衝材を用いた実装装置を示す断面図である。 図９は、チップスタック部品の実装工程を示す断面図である。
　以下、本発明が適用された接続装置、接続構造体の製造方法、チップスタック部品の製造方法及び電子部品の実装方法について、図面を参照しながら詳細に説明する。なお、本発明は、以下の実施形態のみに限定されるものではなく、本発明の要旨を逸脱しない範囲内において種々の変更が可能であることは勿論である。また、図面は模式的なものであり、各寸法の比率等は現実のものとは異なることがある。具体的な寸法等は以下の説明を参酌して判断すべきものである。また、図面相互間においても互いの寸法の関係や比率が異なる部分が含まれていることは勿論である。
　［接続装置］
　本発明が適用された接続装置１は、表面実装部品２を配線基板３上に実装した接続構造体４、あるいは接着剤を介してチップ基板１１を積層したチップ積層体１２の各チップ基板１１を電気的、機械的に接続したチップスタック部品１０を製造するために用いられるものである。表面実装部品２としては、例えばＩＣやＬＳＩ等のパッケージ部品、抵抗やコンデンサ等のチップ部品、あるいは半導体チップ等のチップ基板１１を三次元的に配置し、半導体チップに設けた小さな孔に金属を充填することによって、サンドイッチ状に積み重ねた複数のチップ基板を電気的に接続するＴＳＶ（Through Silicon Via）技術等を用いたチップスタック部品１０などがある。本願では、配線基板３に搭載される表面実装部品２及びチップ積層体１２を合わせて電子部品と称する。
　この接続装置１は、図１に示すように、表面実装部品２が実装される配線基板３やチップ積層体１２が載置される載置部５と、配線基板３に熱硬化性の接着剤６を介して載置された表面実装部品２やチップ積層体１２を加熱押圧する加熱押圧ヘッド７と、表面実装部品２やチップ積層体１２と加熱押圧ヘッド７の押圧面との間に配置され、表面実装部品２やチップ積層体１２の上面を押圧する第１の弾性体８と、表面実装部品２やチップ積層体１２の周囲に配置されるとともに、第１の弾性体８を支持する支持部材となる第２の弾性体９とを有する。
　載置部５は、例えば板状のセラミックによって形成され、上面に配線基板３やチップ積層体１２が載置される。
　加熱押圧ヘッド７は、表面実装部品２やチップ積層体１２を熱加圧することにより、接着剤６を熱硬化させ、表面実装部品２と配線基板３の電極とを電気的、機械的に接続させ、あるいはチップ積層体１２の各チップ基板１１間を電気的、機械的に接続させるものである。加熱押圧ヘッド７は、ヒータが内蔵されるとともに、図示しない昇降機構に支持されることにより載置部５に対して熱加圧面７ａの近接離間が自在とされ、載置部５上に載置された配線基板３に接着剤６を介して搭載された表面実装部品２や、載置部５上に載置されたチップ積層体１２を、所定の温度及び圧力で所定時間、熱加圧することができる。
　［第１の弾性体８］
　第１の弾性体８は、加熱押圧ヘッド７の熱加圧面と表面実装部品２やチップ積層体１２の上面との間に介在されることにより、表面実装部品２やチップ積層体１２の中央部と外周部との圧力差、あるいはバンプが形成された領域と形成されていない領域との圧力差を吸収し、表面実装部品２やチップ積層体１２に対して均一な熱加圧を行うものである。
　第１の弾性体８は、例えばシリコーン樹脂等の弾性体からなり、全体を略矩形板状に形成されている。また、第１の弾性体８は、表面実装部品２あるいはチップ積層体１２の上面を覆うことができる面積を有し、かつ外周部が表面実装部品２あるいはチップ積層体１２の周囲に配設された第２の弾性体９によって支持される。
　［第２の弾性体９］
　第２の弾性体９は、表面実装部品２やチップ積層体１２の周囲に配置されるとともに、第１の弾性体８を支持する支持部材となるものであり、加熱押圧ヘッド７によって熱加圧された第１の弾性体８の圧力が、表面実装部品２やチップ積層体１２の外周部に集中することを防止するものである。
　第２の弾性体９は、例えばシリコーン樹脂等の弾性体からなり、全体を上下が開放された中空状に形成され、表面実装部品２やチップ積層体１２の周囲を囲むように配置される。また、第２の弾性体９は、表面実装部品２やチップ積層体１２と略同じ高さに形成され、これにより表面実装部品２やチップ積層体１２を押圧する第１の弾性体８の外周部を支持する。接続装置１は、支持部材として上下方向に伸縮可能な第２の弾性体９を用いることにより、第２の弾性体９が高さ方向の誤差を吸収でき、表面実装部品２やチップ積層体１２に合わせて高さを高精度に制御しなくともよくなる。なお、接続装置１は、高さを表面実装部品２やチップ積層体１２に合わせて高精度に形成することができれば、支持部材を必ずしも弾性体を用いて形成する必要はない。
　このように、接続装置１は、表面実装部品２やチップ積層体１２といった電子部品と加熱押圧ヘッド７の熱加圧面７ａとの間に配置され、電子部品の上面を押圧する第１の弾性体８と、電子部品の周囲に配置されるとともに、第１の弾性体８を支持する支持部材として第２の弾性体９とを備えることにより、バンプの有無にかかわらず表面実装部品２やチップ積層体１２の上面を均一に熱加圧することができるとともに、第１の弾性体８による圧力が電子部品の外周部に集中することを防止することができる。
　特に、電子部品として、チップスタック部品１０を実装する場合、チップ基板１１にはバンプ１１ａが凸出して形成されているため、バンプ１１ａに加熱押圧ヘッド７による押圧力が集中しやすく、かかる圧力集中によりチップ基板１１に割れが生じるおそれがある。また、薄型のチップ基板１１を積層しているため、外周部に圧力が集中するとチップ基板１１に割れが生じやすい。
　しかし、接続装置１では、第１の弾性体８を介して熱加圧することによりバンプ１１ａへ集中する圧力を分散でき、また、第２の弾性体９によって第１の弾性体８を支持することにより第１の弾性体８によるチップスタック部品１０の外周部への圧力集中を防止することができ、チップ基板１１の割れを防止するとともに、各チップ基板１１間における接続信頼性を向上させることができる。
　［硬度］
　接続装置１は、第２の弾性体９の硬度を第１の弾性体８の硬度以上とすることが好ましい。これにより、第２の弾性体９によって第１の弾性体８を確実に支持し、第１の弾性体８によるチップ積層体１２の外周部への圧力集中を効果的に防止することができる。一方、第２の弾性体９の硬度が第１の弾性体８の硬度に満たない場合、第２の弾性体９が第１の弾性体８に押圧されてしまい、第１の弾性体８による表面実装部品２やチップ積層体１２の外周部への圧力集中を防止することができない。
　また、第１の弾性体８と第２の弾性体９の硬度は、ＪＩＳ　Ｋ　６２５３に規定されるタイプＡデュロメーターによる測定で、２０～６０の範囲とすることが好ましい。第１の弾性体８と第２の弾性体９の硬度が２０より小さいと加熱押圧ヘッド７による圧力を吸収することができず、また第２の弾性体９によって第１の弾性体８を支持することができない。また、第１の弾性体８と第２の弾性体９の硬度が６０より大きくなると、第１の弾性体８がチップスタック部品１０の上面に当接することによっても撓まず、チップ基板１１のバンプ１１ａへ集中する圧力を分散することができなくなる。
　［接着剤］
　次いで、加熱押圧ヘッド７によって熱加圧されることにより、表面実装部品２を配線基板３上に接続し、あるいはチップ基板１１間を接続する接着剤６について説明する。接着剤６は、例えば図２に示すように、膜形成樹脂、熱硬化性樹脂、潜在性硬化剤、シランカップリング剤等を含有する通常のバインダ（接着剤）２３からなり、フィルム状又はペースト状に形成されたものである。以下、フィルム状に成形された絶縁性接着フィルム１７（ＮＣＦ（Non Conductive Film））を例に説明する。
　この絶縁性接着フィルム１７は、加熱押圧ヘッド７によって熱加圧されることにより、配線基板３の接続電極と表面実装部品２の電極とが接触された状態でバインダ２３が硬化し、これにより両電極の電気的、機械的な接続を図る。あるいは、絶縁性接着フィルム１７は、チップ積層体１２を構成する複数のチップ基板１１間に介在され、加熱押圧ヘッド７によって熱加圧されることにより、チップ基板１１の層間がバンプ１１ａで接続された状態で硬化し、これにより複数のチップ基板１１の電気的、機械的な接続を図る。
　この絶縁性接着フィルム１７は、図２に示すように、バインダ２３からなる熱硬化性接着材組成物を剥離フィルム２５上に塗布することにより剥離フィルム２５上に形成される。剥離フィルム２５は、例えば、ＰＥＴ（Poly Ethylene Terephthalate）、ＯＰＰ（Oriented Polypropylene）、ＰＭＰ（Poly-4-methlpentene-1）、ＰＴＦＥ（Polytetrafluoroethylene）等にシリコーン等の剥離剤を塗布してなり、絶縁性接着フィルム１７の形状を維持することができる。
　バインダ２３に含有される膜形成樹脂としては、平均分子量が１００００～８００００程度の樹脂が好ましい。膜形成樹脂としては、エポキシ樹脂、変形エポキシ樹脂、ウレタン樹脂、フェノキシ樹脂等の各種の樹脂が挙げられる。中でも、膜形成状態、接続信頼性等の観点からフェノキシ樹脂が特に好ましい。
　熱硬化性樹脂としては、特に限定されず、例えば、市販のエポキシ樹脂、アクリル樹脂等が挙げられる。
　エポキシ樹脂としては、特に限定されないが、例えば、ナフタレン型エポキシ樹脂、ビフェニル型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、ビスフェノール型エポキシ樹脂、スチルベン型エポキシ樹脂、トリフェノールメタン型エポキシ樹脂、フェノールアラルキル型エポキシ樹脂、ナフトール型エポキシ樹脂、ジシクロペンタジエン型エポキシ樹脂、トリフェニルメタン型エポキシ樹脂等が挙げられる。これらは単独でも、２種以上の組み合わせであってもよい。
　アクリル樹脂としては、特に制限はなく、目的に応じてアクリル化合物、液状アクリレート等を適宜選択することができる。例えば、メチルアクリレート、エチルアクリレート、イソプロピルアクリレート、イソブチルアクリレート、エポキシアクリレート、エチレングリコールジアクリレート、ジエチレングリコールジアクリレート、トリメチロールプロパントリアクリレート、ジメチロールトリシクロデカンジアクリレート、テトラメチレングリコールテトラアクリレート、２－ヒドロキシ－１，３－ジアクリロキシプロパン、２，２－ビス[４－（アクリロキシメトキシ）フェニル]プロパン、２，２－ビス[４－（アクリロキシエトキシ）フェニル]プロパン、ジシクロペンテニルアクリレート、トリシクロデカニルアクリレート、トリス（アクリロキシエチル）イソシアヌレート、ウレタンアクリレート、エポキシアクリレート等を挙げることができる。なお、アクリレートをメタクリレートにしたものを用いることもできる。これらは、１種単独で使用してもよいし、２種以上を併用してもよい。
　潜在性硬化剤としては、特に限定されないが、例えば、加熱硬化型、ＵＶ硬化型等の各種硬化剤が挙げられる。潜在性硬化剤は、通常では反応せず、熱、光、加圧等の用途に応じて選択される各種のトリガにより活性化し、反応を開始する。熱活性型潜在性硬化剤の活性化方法には、加熱による解離反応などで活性種（カチオンやアニオン、ラジカル）を生成する方法、室温付近ではエポキシ樹脂中に安定に分散しており高温でエポキシ樹脂と相溶・溶解し、硬化反応を開始する方法、モレキュラーシーブ封入タイプの硬化剤を高温で溶出して硬化反応を開始する方法、マイクロカプセルによる溶出・硬化方法等が存在する。熱活性型潜在性硬化剤としては、イミダゾール系、ヒドラジド系、三フッ化ホウ素－アミン錯体、スルホニウム塩、アミンイミド、ポリアミン塩、ジシアンジアミド等や、これらの変性物があり、これらは単独でも、２種以上の混合体であってもよい。中でも、マイクロカプセル型イミダゾール系潜在性硬化剤が好適である。
　シランカップリング剤としては、特に限定されないが、例えば、エポキシ系、アミノ系、メルカプト・スルフィド系、ウレイド系等を挙げることができる。シランカップリング剤を添加することにより、有機材料と無機材料との界面における接着性が向上される。
　なお、表面実装部品２を配線基板３に実装させる工程においては、絶縁性接着フィルム１７に変えて、図３に示すバインダ２３に導電性粒子２４を分散させた異方性導電フィルム（ＡＣＦ（Anisotropic Conductive Film））１８を用いてもよい。この場合、表面実装部品２及び配線基板３の各電極の間に導電性粒子２４が挟持され、この状態でバインダ２３が熱硬化することにより両電極の電気的、機械的な接続が図られる。
　導電性粒子２４としては、異方性導電フィルム１８において使用されている公知の何れの導電性粒子を挙げることができる。導電性粒子２４としては、例えば、ニッケル、鉄、銅、アルミニウム、錫、鉛、クロム、コバルト、銀、金等の各種金属や金属合金の粒子、金属酸化物、カーボン、グラファイト、ガラス、セラミック、プラスチック等の粒子の表面に金属をコートしたもの、或いは、これらの粒子の表面に更に絶縁薄膜をコートしたもの等が挙げられる。樹脂粒子の表面に金属をコートしたものである場合、樹脂粒子としては、例えば、エポキシ樹脂、フェノール樹脂、アクリル樹脂、アクリロニトリル・スチレン（ＡＳ）樹脂、ベンゾグアナミン樹脂、ジビニルベンゼン系樹脂、スチレン系樹脂等の粒子を挙げることができる。
　なお、絶縁性接着フィルム１７や異方性導電フィルム１８は、取り扱いの容易さ、保存安定性等の見地から、剥離フィルム２５が積層された面とは反対の面側にも剥離フィルムを設ける構成としてもよい。また、絶縁性接着フィルム１７や異方性導電フィルム１８の形状は、特に限定されないが、例えば、図２に示すように、巻取リール２６に巻回可能な長尺テープ形状とし、所定の長さだけカットして使用することができる。
　また、上述の実施の形態では、接着剤として、バインダ２３に適宜導電性粒子２４を含有した熱硬化性樹脂組成物をフィルム状に成形した接着フィルムを例に説明したが、本発明に係る接着剤は、これに限定されず、例えばバインダ２３のみからなる絶縁性接着剤層と導電性粒子２４を含有したバインダ２３からなる導電性粒子含有層とをそれぞれ２層以上設けた構成とすることができる。また、接着剤は、このようなフィルム成形されてなる接着フィルムに限定されず、例えば、絶縁性接着剤組成物のみからなる絶縁性接着ペーストや、絶縁性接着剤組成物に導電性粒子が分散された導電性接着ペーストとしてもよい。本発明に係る接着剤は、上述したいずれの形態をも包含するものである。
　［製造工程１］
　次いで、接続装置１を用いて表面実装部品２を配線基板３に接続した接続構造体４を製造する工程について説明する。本実施の形態では、表面実装部品２としてチップスタック部品１０を用いる場合について説明する。
　先ず、接続装置１の載置部５に配線基板３を載置する。このとき、配線基板３は、チップスタック部品１０が搭載される位置の直上に加熱押圧ヘッド７がくるように位置合わせされて載置される。
　次いで、載置部５に載置された配線基板３に、接着剤６となる絶縁性接着フィルム１７を仮圧着する。絶縁性接着フィルム１７は、リール２６から引き出され、所定の長さにカットされた後、配線基板３のチップスタック部品１０が搭載される位置に配置され、加熱押圧ヘッド７によって、バインダ２３が流動性を示すが熱硬化しない程度の温度、圧力、時間で熱加圧される。その後、配線基板３の所定位置に絶縁性接着フィルム１７を介してチップスタック部品１０が自動搭載機等により搭載される。
　次いで、図４に示すように、チップスタック部品１０の周囲を囲むように支持部材となる第２の弾性体９を配置し、チップスタック部品１０上を覆い、かつ第２の弾性体９によって外周部が支持されるように第１の弾性体８を配置し、この第１の弾性体８を介して、所定の温度に加熱された加熱押圧ヘッド７を所定の圧力で、所定時間、チップスタック部品１０を熱加圧する。
　このとき、接続装置１は、上記所定の弾性率を有する第１の弾性体８を介してチップスタック部品１０を熱加圧することにより、チップ基板１１に設けられたバンプ１１ａへの圧力集中を防止することができる。また、接続装置１は、第１の弾性体８の硬度以上の硬度を有する第２の弾性体９によって第１の弾性体８の外周部を支持するため、第１の弾性体８による圧力がチップスタック部品１０の外周部に集中することを防止することができる。したがって、接続装置１は、第１の弾性体８によってチップスタック部品１０の上面を均一に押圧し、チップ基板１１の割れを防ぎ、また割れによるチップ基板１１間の接続信頼性や、チップスタック部品１０と配線基板３との接続信頼性の低下を防止することができる。
　これにより、チップスタック部品１０の電極と配線基板３の電極とが接触し、この状態で絶縁性接着フィルム１７のバインダ２３が熱硬化することにより、チップスタック部品１０が配線基板３に実装された接続構造体４が製造される。
　なお、本実施の形態では表面実装部品２としてチップスタック部品１０を用いたが、表面実装部品２としては、例えばＩＣやＬＳＩ等のパッケージ部品、抵抗やコンデンサ等のチップ部品を実装することもできる。また、配線基板３の電極と表面実装部品２の電極との接続には、異方性導電フィルム１８やペースト状の接着剤６を用いることもできる。
　［製造工程２］
　次に、接続装置１を用いてチップスタック部品１０を製造する工程について説明する。先ず、接続装置１による熱加圧工程の前工程として、複数のチップ基板１１を、互いのバンプ１１ａ同士が接触しうるように位置合わせされて、絶縁性接着フィルム１７を介して積層されたチップ積層体１２を形成する。
　次いで、接続装置１の載置部５にチップ積層体１２を載置する。このとき、チップ積層体１２は、直上に加熱押圧ヘッド７がくるように位置合わせされて載置される。
　次いで、図５に示すように、チップ積層体１２の周囲を囲むように支持部材となる第２の弾性体９を配置し、チップ積層体１２上を覆い、かつ第２の弾性体９によって外周部が支持されるように第１の弾性体８を配置し、この第１の弾性体８を介して、所定の温度に加熱された加熱押圧ヘッド７を所定の圧力で、所定時間、チップ積層体１２を熱加圧する。
　このとき、接続装置１は、上記所定の弾性率を有する第１の弾性体８を介してチップ積層体１２を熱加圧することにより、チップ基板１１に設けられたバンプ１１ａへの圧力集中を防止することができる。また、接続装置１は、第１の弾性体８の硬度以上の硬度を有する第２の弾性体９によって第１の弾性体８を支持するため、第１の弾性体８による圧力がチップ積層体１２の外周部に集中することを防止することができる。したがって、接続装置１は、第１の弾性体８によってチップ積層体１２の上面を均一に押圧し、チップ基板１１の割れを防ぎ、またチップ基板１１の割れによるチップ積層体１２のチップ基板１１間の接続信頼性の低下を防止することができる。
　これにより、チップ積層体１２を構成する各チップ基板１１は、バンプ１１ａ同士が接続した状態で絶縁性接着フィルム１７のバインダ２３が熱硬化し、チップスタック部品１０が製造される。
　また、このチップスタック部品１０の製造工程を、半導体ウェハや配線基板３上において行ってもよい。チップスタック部品１０の製造工程を配線基板３上において行うことにより、チップスタック部品１０の製造とチップスタック部品１０の実装を同時に行うこともできる。この場合、チップ積層体１２の最下層のチップ基板１１と配線基板３の所定位置との間に絶縁性接着フィルム１７や異方性導電フィルム１８等の接着剤６を設け、加熱押圧ヘッド７によって一括して熱加圧する。これにより、チップ積層体１２が熱加圧されることによりチップ基板１１の層間接続用のバンプ１１ａが接続した状態で各チップ基板１１が接続されたチップスタック部品１０が製造されると共に、このチップスタック部品１０が配線基板３に実装された接続構造体４を製造することができる。
　［他の実施例］
　また、図６に示すように、接続装置１は、第２の弾性体９を表面実装部品２やチップ積層体１２の数に応じて格子状に形成することにより複数の電子部品を同時に熱加圧するようにしてもよい。格子状に形成された第２の弾性体９の分割領域内には表面実装部品２やチップ積層体１２が配置される。表面実装部品２やチップ積層体１２を上面から押圧する第１の弾性体８は、格子状に形成された第２の弾性体９の各格子上を覆うと共に、第２の弾性体９によって外周部を含む全面が格子状に支持される。第２の弾性体９によって構成される格子形状は、１行複数列、複数行複数列のいずれでもよい。
　次いで、本発明の実施例について説明する。実施例は、第１、第２の弾性体８，９の各硬度を変えた実施例及び比較例を用意し、各実施例及び比較例に係る第１、第２の弾性体８，９を用いて、接続装置１により絶縁性接着フィルム１７を介してチップ基板１１を積層したチップ積層体１２を熱加圧してチップスタック部品１０を製造した。製造後、チップスタック部品１０の割れ（クラック）の発生、及びチップ基板１１間の接続信頼性を評価した。
　割れ（クラック）の発生の有無は目視により確認した。接続信頼性は、チップスタック部品１０の初期導通抵抗と、ＰＣＴ試験（Pressure Cooker Test：１３０℃　８５％ＲＨ　３００ｈ）及びＴＣＴ試験（Temperature Cycle Test：－５５℃　３０ｍｉｎ⇔１２５℃　３０ｍｉｎ　５００サイクル）を経た後の導通抵抗値とを対比し、導通抵抗値が３０％以上上昇したものをＮＧ（×）とした。
　各実施例及び比較例に係る第１、第２の弾性体８，９は、いずれもシリコーンゴムを用いて形成した。絶縁性接着フィルム１７は、エポキシ系硬化樹脂を用いた。チップスタック部品１０は、厚さ５０μｍのチップ基板１１を４層積層した。各チップ基板１１には、層間接続用のバンプが２５×２列（ピッチ幅４０μｍ）で形成されている。
　加熱押圧ヘッド７によるチップ積層体１２の熱加圧条件は、２３０℃、１０Ｎ、３０ｓｅｃである。実施例及び比較例に係る第１、第２の弾性体８，９のゴム硬度は、いずれもＪＩＳ　Ｋ　６２５３に規定されるタイプＡデュロメーターによる測定値である。
　実施例１は、第１の弾性体８のゴム硬度が２０であるのに対し、第２の弾性体９のゴム硬度を２０とした。
　実施例２は、第１の弾性体８のゴム硬度が２０であるのに対し、第２の弾性体９のゴム硬度を４０とした。
　実施例３は、第１の弾性体８のゴム硬度が２０であるのに対し、第２の弾性体９のゴム硬度を６０とした。
　実施例４は、第１の弾性体８のゴム硬度が２０であるのに対し、第２の弾性体９のゴム硬度を８０とした。
　比較例１は、第１の弾性体８のゴム硬度が４０であるのに対し、第２の弾性体９のゴム硬度を２０とした。
　実施例５は、第１の弾性体８のゴム硬度が４０であるのに対し、第２の弾性体９のゴム硬度を４０とした。
　実施例６は、第１の弾性体８のゴム硬度が４０であるのに対し、第２の弾性体９のゴム硬度を６０とした。
　実施例７は、第１の弾性体８のゴム硬度が４０であるのに対し、第２の弾性体９のゴム硬度を８０とした。
　比較例２は、第１の弾性体８のゴム硬度が６０であるのに対し、第２の弾性体９のゴム硬度を２０とした。
　比較例３は、第１の弾性体８のゴム硬度が６０であるのに対し、第２の弾性体９のゴム硬度を４０とした。
　実施例８は、第１の弾性体８のゴム硬度が６０であるのに対し、第２の弾性体９のゴム硬度を６０とした。
　実施例９は、第１の弾性体８のゴム硬度が６０であるのに対し、第２の弾性体９のゴム硬度を８０とした。
　比較例４は、第１の弾性体８のゴム硬度が８０であるのに対し、第２の弾性体９のゴム硬度を２０とした。
　比較例５は、第１の弾性体８のゴム硬度が８０であるのに対し、第２の弾性体９のゴム硬度を４０とした。
　比較例６は、第１の弾性体８のゴム硬度が８０であるのに対し、第２の弾性体９のゴム硬度を６０とした。
　比較例７は、第１の弾性体８のゴム硬度が８０であるのに対し、第２の弾性体９のゴム硬度を８０とした。
Figure JPOXMLDOC01-appb-T000001
　測定結果を表１に示す。表１に示すように、実施例１～９では、いずれも第２の弾性体９の硬度が第１の弾性体８の硬度以上であるため、第２の弾性体９によって第１の弾性体８を支持することにより、バンプ１１ａへ集中する圧力を分散できるとともに、第１の弾性体８によるチップ積層体１２の外周部への圧力集中を防止することができ、厚さ５０μｍと極薄のチップ基板１１を積層したチップスタック部品１０の製造においても、割れを防止することができた。また、ＰＣＴ試験及びＴＣＴ試験を経た後も導通抵抗値の上昇率は３０％未満であり、各チップ基板１１の層間接続も良好であった。
　一方、比較例１～３では、いずれも第２の弾性体９の硬度が第１の弾性体８の硬度より低く、第２の弾性体９によって第１の弾性体８によるチップ積層体１２の外周部への圧力集中を防止することができず、割れが発生した。また、ＰＣＴ試験及びＴＣＴ試験を経た後の導通抵抗値の上昇率は３０％以上となった。このため、厚さが５０μｍと極薄のチップ基板１１を積層するチップスタック部品１０の製造には不十分であった。
　また、比較例４～７では、第１の弾性体８のゴム硬度が８０と硬いため、第１の弾性体８によってバンプ１１ａへ集中する圧力を分散することができず、バンプ１１ａへの圧力集中による割れが発生した。また、ＰＣＴ試験及びＴＣＴ試験を経た後の導通抵抗値の上昇率は３０％以上となった。このため、厚さが５０μｍと極薄のチップ基板１１を積層するチップスタック部品１０の製造には不十分であった。
１　接続装置、２　表面実装部品、３　配線基板、４　接続構造体、５　載置部、６　接着剤、７　加熱押圧ヘッド、８　第１の弾性体、９　第２の弾性体、１０　チップスタック部品、１１　チップ基板、１２　チップ積層体、１７　絶縁性接着フィルム、１８　異方性導電フィルム、２３　バインダ、２４　導電性粒子、２５　剥離フィルム、２６　リール

Claims (17)

  1. 　熱硬化性の接着剤層と積層された電子部品が載置される載置部と、
    　上記電子部品を加熱押圧する加熱押圧ヘッドと、
    　上記電子部品と上記加熱押圧ヘッドの押圧面との間に配置され、上記電子部品の上面を押圧する第１の弾性体と、
    　上記電子部品の周囲に配置されるとともに、上記第１の弾性体を支持する支持部材とを有する接続装置。
  2. 　上記支持部材は、上記第１の弾性体の硬度以上の硬度を有する第２の弾性体である請求項１記載の接続装置。
  3. 　上記第１の弾性体と上記第２の弾性体の硬度は、ＪＩＳ　Ｋ　６２５３に規定されるタイプＡデュロメーターによる測定で、２０～６０の範囲にある請求項２記載の接続装置。
  4. 　上記支持部材を格子状に設けることによって、上記電子部品が載置される複数の領域が形成されている請求項１記載の接続装置。
  5. 　載置部に電子部品が実装される基板を載置する工程と、
    　上記載置部に載置された基板に、熱硬化性の接着剤を介して電子部品を搭載する工程と、
    　上記電子部品の上面側に第１の弾性体を配置するとともに、上記電子部品の周囲に上記第１の弾性体を支持する支持部材を配置し、上記第１の弾性体を介して加熱押圧ヘッドによって上記電子部品を熱加圧し上記基板に実装する工程とを有する接続構造体の製造方法。
  6. 　上記支持部材は、上記第１の弾性体の硬度以上の硬度を有する第２の弾性体である請求項５記載の接続構造体の製造方法。
  7. 　上記第１の弾性体と上記第２の弾性体の硬度は、ＪＩＳ　Ｋ　６２５３に規定されるタイプＡデュロメーターによる測定で、２０～６０の範囲にある請求項６記載の接続構造体の製造方法。
  8. 　上記電子部品は、チップ基板が複数積層され、各チップ基板が電気的、機械的に接続されたチップスタック部品である請求項７記載の接続構造体の製造方法。
  9. 　上記電子部品は、熱硬化性の接着剤を介して複数のチップ基板が積層されたチップ積層体である請求項７記載の接続構造体の製造方法。
  10. 　上記支持部材によって、上記電子部品が載置される複数の領域に分割され、複数の上記電子部品を同時に実装する請求項５記載の接続構造体の製造方法。
  11. 　チップ基板が複数積層され、各チップ基板が電気的、機械的に接続されたチップスタック部品の製造方法において、
    　チップ基板の一面に設けられたバンプを熱硬化性の接着剤を介して隣接するチップ基板の他面に設けられた電極上に載置することにより、複数のチップ基板が積層されたチップ積層体を形成する工程と、
    　上記チップ積層体の上面側に第１の弾性体を配置するとともに、上記チップ積層体の周囲に上記第１の弾性体を支持する支持部材を配置し、上記第１の弾性体を介して加熱押圧ヘッドによって上記チップ積層体を熱加圧する工程とを有するチップスタック部品の製造方法。
  12. 　上記支持部材は、上記第１の弾性体の硬度以上の硬度を有する第２の弾性体である請求項１１記載のチップスタック部品の製造方法。
  13. 　上記第１の弾性体と上記第２の弾性体の硬度は、ＪＩＳ　Ｋ　６２５３に規定されるタイプＡデュロメーターによる測定で、２０～６０の範囲にある請求項１２記載のチップスタック部品の製造方法。
  14. 　上記チップ積層体は、少なくとも１層は厚さ１００μｍ以下のチップ基板を含む請求項１３記載のチップスタック部品の製造方法。
  15. 　上記支持部材によって、上記電子部品が載置される複数の領域に分割され、複数の上記チップスタック部品を同時に製造する請求項１１記載のチップスタック部品の製造方法。
  16. 　基板又はウェハ上に熱硬化性の接着剤を介して上記チップ積層体を載置し、一括して熱加圧する請求項１１記載のチップスタック部品の製造方法。
  17. 　載置部に電子部品が実装される基板を載置する工程と、
    　上記載置部に載置された基板に、熱硬化性の接着剤を介して電子部品を搭載する工程と、
    　上記電子部品の上面側に第１の弾性体を配置するとともに、上記電子部品の周囲に上記第１の弾性体を支持する支持部材を配置し、上記第１の弾性体を介して加熱押圧ヘッドによって上記電子部品を熱加圧する工程とを有する電子部品の実装方法。
PCT/JP2012/078237 2011-11-07 2012-10-31 接続装置、接続構造体の製造方法、チップスタック部品の製造方法及び電子部品の実装方法 WO2013069522A1 (ja)

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