CN104025273B - 连接装置、连接构造体的制造方法、芯片堆叠部件的制造方法及电子部件的安装方法 - Google Patents

连接装置、连接构造体的制造方法、芯片堆叠部件的制造方法及电子部件的安装方法 Download PDF

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CN104025273B
CN104025273B CN201280054633.XA CN201280054633A CN104025273B CN 104025273 B CN104025273 B CN 104025273B CN 201280054633 A CN201280054633 A CN 201280054633A CN 104025273 B CN104025273 B CN 104025273B
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elastomer
chip
electronic unit
manufacture method
substrate
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CN104025273A (zh
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斋藤崇之
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Dexerials Corp
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Dexerials Corp
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Abstract

防止电子部件的破裂。具有：载放部（5），载放与热固化性的粘接剂层（6）层叠的电子部件（2、12）；加热按压头（7），对电子部件（2、12）进行加热按压；第1弹性体（8），配置于电子部件（2、12）与加热按压头（7）的按压面（7a）之间，对电子部件（2、12）的上表面进行按压；以及支撑构件（9），配置于电子部件（2、12）的周围，并且支撑第1弹性体。

Description

连接装置、连接构造体的制造方法、芯片堆叠部件的制造方法 及电子部件的安装方法
技术领域
本发明涉及连接装置、连接构造体及电子部件的制造方法、安装方法，特别涉及通过经由缓冲材料进行加热按压来安装经由粘接剂配置于基板安装部的电子部件的连接装置、连接构造体及电子部件的制造方法、安装方法。
本申请以在日本于2011年11月7日申请的日本专利申请号特愿2011－243528为基础而主张优先权，该申请通过参照而引用于本申请。
背景技术
一直以来，作为将半导体芯片等的电子部件安装于基板的作法，已知经由各向异性导电膜（ACF：Anisotropic Conductive Film）将电子部件搭载于基板，用加热按压头对电子部件进行热加压的作法。作为该作法所使用的安装装置100，如图7所示，有具备载放基板101的载放部102和对经由各向异性导电膜103而搭载于基板101上的电子部件104进行热加压的加热按压头105的安装装置。
加热按压头105内置有加热器，并且利用未图示的升降机构对于载放部102可自由升降。而且，安装装置100当经由各向异性导电膜103将电子部件104搭载于基板，则将加热按压头105按压于电子部件的上表面，以既定温度、既定压力，进行热加压既定时间。由此，安装装置100将电子部件104电气、机械地连接于基板101。
另外，作为安装装置，如图8A、图8B所示，有将缓冲材料106介于加热按压头105与电子部件104之间的安装装置。安装装置100通过将缓冲材料106介入，能够防止压力集中于电子部件104的电极104a，并防止电子部件104或基板101的翘曲或破裂。缓冲材料106使用硅橡胶等的弹性体形成。另外，作为缓冲材料106，已知如图8A所示，构成板形状、并按压搭载有电子部件104的基板101的上表面整体的缓冲材料106a，和如图8B所示，凹设有与预先安装的电子部件107的形状相应的凹部108，使对电子部件107的压力集中有效地分散的缓冲材料106b。
现有技术文献
专利文献
专利文献1：日本特开2007－227622号公报。
发明内容
发明要解决的课题
然而，现有的安装装置所使用的缓冲材料106，由于应力集中于基板101或电子部件104的外周部，因此存在电子部件104发生破裂等的情况。
另外，近年来，作为电子部件，使用如图9所示的将厚度100μm程度的芯片基板层叠而构成的芯片堆叠部件108。该芯片堆叠部件108，在芯片基板109开小孔，对其填充Cu等的金属，通过将堆积为三明治状的多个芯片基板电连接而形成。
在安装这样的芯片堆叠部件108的情况下，由于在芯片基板表面金属凸点110凸出，由加热按压头105产生的按压力易于集中于该金属凸点110，因此存在由于这样的压力集中而芯片基板109发生破裂的担忧。特别地，在使用厚度为50μm以下这样的极薄的芯片基板109的情况下，其风险变高。
另外，即使在为了避免这样的芯片基板109的破裂，使图8（a）所示的缓冲材料106a、或如图9所示由支撑芯片堆叠部件108的上表面及侧面的弹性体构成的缓冲材料111介入的情况下，也存在受到加热按压头105的按压力的缓冲材料111的应力S集中于芯片堆叠部件108的外周部，发生破裂的担忧。另外，一旦发生芯片基板109的破裂，则各芯片基板109的层间的连接可靠性受损。
进而，即使在采用经由热固化性的粘接剂来层叠芯片基板109，通过利用加热按压头7从上表面成批地进行热加压来制造芯片堆叠部件108的作法的情况下，也存在加热按压头105造成的按压力容易集中于金属凸点110，由于这样的压力集中导致芯片基板109发生破裂的担忧，或加热按压头105的按压力经由缓冲材料111而集中于芯片堆叠部件108的外周部，发生破裂的担忧。
而且，一旦芯片堆叠部件108发生破裂，则以此为起因而损害芯片基板109的层间连接的可靠性。
因此，本发明目的在于，提供能够防止电子部件的破裂的连接装置、连接构造体的制造方法、芯片堆叠部件的制造方法及电子部件的安装方法。
用于解决课题的方案
为了解决上述的课题，本发明所涉及的连接装置具有：载放部，载放与热固化性的粘接剂层层叠的电子部件；加热按压头，对上述电子部件进行加热按压；第1弹性体，配置于上述电子部件与上述加热按压头的按压面之间，按压上述电子部件的上表面；以及支撑构件，配置于上述电子部件的周围，并且支撑上述第1弹性体。
另外，本发明所涉及的连接构造体的制造方法具有：将安装电子部件的基板载放于载放部的工序；将电子部件经由热固化性的粘接剂搭载于上述载放部所载放的基板的工序；以及将第1弹性体配置于上述电子部件的上表面侧，并且将支撑上述第1弹性体的支撑构件配置于上述电子部件的周围，利用加热按压头经由上述第1弹性体对上述电子部件进行热加压而安装于上述基板的工序。
另外，本发明所涉及的芯片堆叠部件的制造方法，在层叠多个芯片基板、各芯片基板被电气、机械地连接的芯片堆叠部件的制造方法中，具有：通过将设在芯片基板的一个面的凸点经由热固化性的粘接剂载放于设在邻接的芯片基板的另一个面的电极上，从而形成层叠多个芯片基板的芯片层叠体的工序；以及将第1弹性体配置于上述芯片层叠体的上表面侧，并且将支撑上述第1弹性体的支撑构件配置于上述芯片层叠体的周围，利用加热按压头经由上述第1弹性体对上述芯片层叠体进行热加压的工序。
另外，本发明所涉及的电子部件的安装方法具有：将安装电子部件的基板载放于载放部的工序；将电子部件经由热固化性的粘接剂而搭载于载放于上述载放部的基板的工序；以及将第1弹性体配置于上述电子部件的上表面侧，并且将支撑上述第1弹性体的支撑构件配置于上述电子部件的周围，利用加热按压头经由上述第1弹性体对上述电子部件进行热加压的工序。
发明的效果
依据本发明，通过具备配置于电子部件与加热按压头的按压面之间，按压电子部件的上表面的第1弹性体，以及配置于电子部件的周围，并且支撑第1弹性体的支撑构件，从而能够与凸点的有无无关地对电子部件的上表面均匀地进行热加压，并且能够防止由第1弹性体造成的压力集中于电子部件的外周部。因此，依据本发明，能够防止电子部件的破裂。
附图说明
图1是示出应用了本发明的连接装置的截面图；
图2是示出绝缘性粘接膜的截面图；
图3是示出各向异性导电膜的截面图；
图4是示出表面安装部件的安装工序的截面图；
图5是示出芯片堆叠部件的制造工序的截面图；
图6是示出第1、第2弹性体的其他结构的立体图；
图7是示出现有的安装装置的侧面图；
图8A、图8B是示出使用现有的缓冲材料的安装装置的截面图；
图9是示出芯片堆叠部件的安装工序的截面图。
具体实施方式
以下，关于应用了本发明的接装置、连接构造体的制造方法、芯片堆叠部件的制造方法及电子部件的安装方法，一边参照附图一边详细地说明。此外，本发明并不仅限定于以下的实施方式，当然在不脱离本发明的要点的范围内能进行各种的变更。另外，附图是示意性的，存在各尺寸的比例等与现实的不同的情况。具体的尺寸等应参照以下的说明来判断。另外，当然在附图相互间也包含互相的尺寸的关系或比例不同的部分。
[连接装置]
应用了本发明的连接装置1，是为了制造将表面安装部件2安装于布线基板3上的连接构造体4、或者将经由粘接剂而层叠芯片基板11的芯片层叠体12的各芯片基板11电气、机械地连接的芯片堆叠部件10所使用的连接装置。作为表面安装部件2，存在使用通过将例如IC或LSI等的封装件部件、电阻或电容器等的芯片部件、或者半导体芯片等的芯片基板11三维配置，将金属填充于设在半导体芯片的小孔，从而将堆积为三明治状的多个芯片基板电连接的TSV（Through Silicon Via：硅通孔）技术等的芯片堆叠部件10等。本申请中，将搭载于布线基板3的表面安装部件2及芯片层叠体12合称为电子部件。
该连接装置1如图1所示，具有：载放部5，载放有安装表面安装部件2的布线基板3或芯片层叠体12；加热按压头7；对经由热固化性的粘接剂6而载放于布线基板3的表面安装部件2或芯片层叠体12进行加热按压；第1弹性体8，配置于表面安装部件2或芯片层叠体12与加热按压头7的按压面之间，按压表面安装部件2或芯片层叠体12的上表面；以及第2弹性体9，配置于表面安装部件2或芯片层叠体12的周围，并且成为支撑第1弹性体8的支撑构件。
载放部5例如由板状的陶瓷形成，在上表面载放布线基板3或芯片层叠体12。
加热按压头7通过对表面安装部件2或芯片层叠体12进行热加压，使粘接剂6热固化，使表面安装部件2与布线基板3的电极电气、机械地连接，或者使芯片层叠体12的各芯片基板11间电气、机械地连接。加热按压头7内置加热器，并且被未图示的升降机构支撑，从而对于载放部5，热加压面7a的接近离开自由，能够对经由粘接剂6而搭载于载放部5上所载放的布线基板3的表面安装部件2，或载放部5上所载放的芯片层叠体12，以既定温度及压力进行热加压既定时间。
[第1弹性体8]
第1弹性体8通过介于加热按压头7的热加压面与表面安装部件2或芯片层叠体12的上表面之间，从而吸收表面安装部件2或芯片层叠体12的中央部与外周部的压力差、或者形成凸点的区域与未形成的区域的压力差，对于表面安装部件2或芯片层叠体12进行均匀的热加压。
第1弹性体8由例如硅酮树脂等的弹性体构成，将整体形成为大致矩形板状。另外，第1弹性体8具有能够覆盖表面安装部件2或者芯片层叠体12的上表面的面积，并且外周部由配设于表面安装部件2或者芯片层叠体12的周围的第2弹性体9来支撑。
[第2弹性体9]
第2弹性体9配置于表面安装部件2或芯片层叠体12的周围，并且成为支撑第1弹性体8的支撑构件，能够防止由加热按压头7进行热加压的第1弹性体8的压力，集中于表面安装部件2或芯片层叠体12的外周部。
第2弹性体9由例如硅酮树脂等的弹性体构成，将整体形成为上下开放的中空状，以包围表面安装部件2或芯片层叠体12的周围的方式配置。另外，第2弹性体9形成为与表面安装部件2或芯片层叠体12大致相同的高度，由此支撑按压表面安装部件2或芯片层叠体12的第1弹性体8的外周部。连接装置1通过使用在上下方向可伸缩的第2弹性体9作为支撑构件，从而第2弹性体9能够吸收高度方向的误差，不与表面安装部件2或芯片层叠体12相配合而高精度地控制高度也可以。此外，如果连接装置1能够与表面安装部件2或芯片层叠体12相配合而高精度地形成高度，则无需一定要使用弹性体来形成支撑构件。
这样，连接装置1具备配置于表面安装部件2或芯片层叠体12这样的电子部件与加热按压头7的热加压面7a之间、按压电子部件的上表面的第1弹性体8，和配置于电子部件的周围、并且作为支撑第1弹性体8的支撑构件的第2弹性体9，能够与凸点的有无无关地对表面安装部件2或芯片层叠体12的上表面均匀地进行热加压，并且能够防止由第1弹性体8造成的压力集中于电子部件的外周部。
特别地，在安装芯片堆叠部件10作为电子部件的情况下，由于在芯片基板11凸出形成有凸点11a，因此有加热按压头7造成的按压力容易集中于凸点11a，存在由这样的压力集中造成芯片基板11产生破裂的担忧。另外，由于层叠薄型的芯片基板11，因此当压力集中于外周部则芯片基板11容易产生破裂。
然而，连接装置1中，通过经由第1弹性体8进行热加压能够将向凸点11a集中的压力分散，另外，通过由第2弹性体9来支撑第1弹性体8，能够防止由第1弹性体8造成的向芯片堆叠部件10的外周部的压力集中，能够防止芯片基板11的破裂，并且提高各芯片基板11间的连接可靠性。
[硬度]
连接装置1优选使第2弹性体9的硬度为第1弹性体8的硬度以上。由此，由第2弹性体9可靠地支撑第1弹性体8，能够有效地防止由第1弹性体8造成的向芯片层叠体12的外周部的压力集中。另一方面，在第2弹性体9的硬度小于第1弹性体8的硬度的情况下，第2弹性体9被第1弹性体8按压，不能防止由第1弹性体8造成的向表面安装部件2或芯片层叠体12的外周部的压力集中。
另外，第1弹性体8和第2弹性体9的硬度，优选在利用JIS K 6253所规定的类型A硬度计（durometer）进行的测定中，为20～60的范围。若第1弹性体8和第2弹性体9的硬度小于20则不能吸收由加热按压头7造成的压力，另外不能由第2弹性体9来支撑第1弹性体8。另外，若第1弹性体8和第2弹性体9的硬度大于60，则即使第1弹性体8与芯片堆叠部件10的上表面抵接也不弯曲，不能分散向芯片基板11的凸点11a集中的压力。
[粘接剂]
接着，关于通过利用加热按压头7来热加压，将表面安装部件2连接于布线基板3上、或者连接芯片基板11间的粘接剂6进行说明。粘接剂6例如如图2所示，由含有膜形成树脂、热固化性树脂、潜在性固化剂、硅烷耦合剂等的通常的粘合剂（粘接剂）23构成，形成为膜状或膏状。以下，以成形为膜状的绝缘性粘接膜17（NCF（Non Conductive Film：非导电性绝缘膜））为例来说明。
该绝缘性粘接膜17通过利用加热按压头7来热加压，从而在布线基板3的连接电极与表面安装部件2的电极相接触的状态下粘合剂23固化，由此谋求两电极的电气、机械的连接。或者，绝缘性粘接膜17介于构成芯片层叠体12的多个芯片基板11间，通过利用加热按压头7来热加压，从而以芯片基板11的层间在凸点11a连接的状态固化，由此谋求多个芯片基板11的电气、机械的连接。
该绝缘性粘接膜17如图2所示，通过将由粘合剂23构成的热固化性粘接材料组合物涂敷于剥离膜25上而形成于剥离膜25上。剥离膜25由将硅酮等的剥离剂涂敷于例如PET（Poly Ethylene Terephthalate：聚对苯二甲酸乙二醇酯）、OPP（OrientedPolypropylene：拉伸聚丙烯）、PMP（Poly-4-methlpentene-1：聚4－甲基戊烯－1）、PTFE（Polytetrafluoroethylene：聚四氟乙烯）等而成，能够维持绝缘性粘接膜17的形状。
作为粘合剂23所含有的膜形成树脂，优选平均分子量为10000～80000程度的树脂。作为膜形成树脂，可举出环氧树脂、变形环氧树脂、聚氨酯树脂、苯氧基树脂等的各种树脂。其中，从膜形成状态、连接可靠性等的观点，特别优选苯氧基树脂。
作为热固化性树脂，并未特别限定，例如，可举出市售的环氧树脂、丙烯酸树脂等。
作为环氧树脂，虽未特别限定，但可举出例如萘型环氧树脂、联苯型环氧树脂、酚醛清漆型环氧树脂、双酚型环氧树脂、二苯乙烯型环氧树脂、三苯甲醇型环氧树脂、芳烷基酚醛型环氧树脂、萘酚型环氧树脂、双环戊二烯型环氧树脂、三苯代甲烷型环氧树脂等。这些单独也可，2种以上的组合也可。
作为丙烯酸树脂，没有特别限制，根据目的能够适当选择丙烯酸化合物、液态丙烯酸酯等。例如，能够举出丙烯酸甲酯、丙烯酸乙酯、丙烯酸异丙酯、丙烯酸异丁酯、环氧丙烯酸酯、二丙烯酸乙二醇酯、二丙烯酸二甘醇酯、三羟甲基丙烷三丙烯酸酯、二羟甲基三环癸烷二丙烯酸酯、四亚甲基二醇四丙烯酸酯、2－羟基－1,3－二丙烯酰氧基丙烷、2,2－双[4－(丙烯酰氧基甲氧基)苯基]丙烷、2,2－双[4－(丙烯酰氧基乙氧基)苯基]丙烷、二环戊烯基丙烯酸酯、三环癸烯基丙烯酸酯、三(丙烯酰氧基乙基)异氰尿酸酯、聚氨酯丙烯酸酯、环氧丙烯酸酯等。此外，也能够使用使丙烯酸酯为甲基丙烯酸酯的树脂。这些可以以1种单独使用，也可以并用2种以上。
作为潜在性固化剂，并未特别限定，但可举出例如加热固化型、UV固化型等的各种固化剂。潜在性固化剂通常不反应，通过热、光、加压等的与用途相应地选择的各种触发而活化，开始反应。热活性型潜在性固化剂的活化方法中，存在用加热导致的解离反应等生成活性种（阳离子或阴离子、自由基）的方法；在室温附近稳定地分散于环氧树脂中，在高温下与环氧树脂相容/溶解，开始固化反应的方法；将分子筛封入类型的固化剂在高温下溶出而开始固化反应的方法；利用微胶囊的溶出/固化方法等。作为热活性型潜在性固化剂，有咪唑类、酰肼类、三氟化硼胺络合物、锍盐、胺化酰亚胺、聚胺盐、双氰胺等，或这些的改性物，这些可以是单独，也可以是2种以上的混合体。其中，微胶囊型咪唑类潜在性固化剂合适。
作为硅烷耦合剂，并未特别限定，但能够举出例如环氧类、氨基类、巯基/硫化物类、酰脲类等。通过添加硅烷耦合剂，可提高有机材料与无机材料的界面的粘接性。
此外，在将表面安装部件2安装于布线基板3的工序中，变更为绝缘性粘接膜17，使用将导电性粒子24分散于图3所示的粘合剂23的各向异性导电膜（ACF（AnisotropicConductive Film））18也可以。在该情况下，导电性粒子24被夹持在表面安装部件2及布线基板3的各电极之间，通过在该状态下粘合剂23热固化来谋求两电极的电气、机械的连接。
作为导电性粒子24，能够举出在各向异性导电膜18所使用的公知的任何导电性粒子。作为导电性粒子24，可举出例如镍、铁、铜、铝、锡、铅、铬、钴、银、金等的各种金属或金属合金的粒子、金属氧化物、将金属覆盖于碳、石墨、玻璃、陶瓷、塑料等的粒子的表面的粒子，或者这些粒子的表面进而覆盖绝缘薄膜的粒子等。将金属覆盖于树脂粒子的表面的粒子的情况下，作为树脂粒子，能够举出例如环氧树脂、酚醛树脂、丙烯酸树脂、丙烯腈-苯乙烯（AS）树脂、苯代三聚氰胺(benzoguanamine)树脂、二乙烯基苯类树脂，苯乙烯类树脂等的粒子。
此外，绝缘性粘接膜17或各向异性导电膜18，出于操作的容易性、保存稳定性等的观点，也可以构成为在与层叠有剥离膜25的面相反的面侧也设置剥离膜。另外，绝缘性粘接膜17或各向异性导电膜18的形状，并未特别限定，但例如能够如图2所示，设为可卷绕于卷取轴26的长带形状，仅切割既定长度来使用。
另外，上述实施方式中，作为粘接剂，以在粘合剂23含有适当导电性粒子24的热固化性树脂组合物成形为膜状的粘接膜为例进行了说明，但本发明所涉及的粘接剂并不限定于此，例如能够设为将仅由粘合剂23构成的绝缘性粘接剂层和由含有导电性粒子24的粘合剂23构成的导电性粒子含有层分别设置2层以上的结构。另外，粘接剂并不限定于这样的膜成形而成的粘接膜，例如，也可以为仅由绝缘性粘接剂组合物构成的绝缘性粘接膏，或导电性粒子分散于绝缘性粘接剂组合物的导电性粘接膏。本发明所涉及的粘接剂包含上述的任一种方式。
[制造工序1]
接着，关于制造使用连接装置1将表面安装部件2与布线基板3连接的连接构造体4的工序进行说明。在本实施方式中，关于使用芯片堆叠部件10作为表面安装部件2的情况进行说明。
首先，将布线基板3载放于连接装置1的载放部5。此时，以加热按压头7来到搭载芯片堆叠部件10的位置的正上的方式将布线基板3对位而载放。
接着，将成为粘接剂6的绝缘性粘接膜17预压接于载放部5所载放的布线基板3。将绝缘性粘接膜17从轴26拉出，切割为既定长度后，配置于布线基板3的芯片堆叠部件10所搭载的位置，利用加热按压头7，以粘合剂23示出流动性没有热固化的程度的温度、压力、时间进行热加压。随后，利用自动搭载机等将芯片堆叠部件10经由绝缘性粘接膜17搭载于布线基板3的既定位置。
接着，如图4所示，以包围芯片堆叠部件10的周围的方式配置成为支撑构件的第2弹性体9，以覆盖芯片堆叠部件10之上、且由第2弹性体9支撑外周部的方式配置第1弹性体8，经由该第1弹性体8，将加热至既定温度的加热按压头7以既定压力、既定时间对芯片堆叠部件10进行热加压。
此时，连接装置1通过经由具有上述既定弹性率的第1弹性体8对芯片堆叠部件10进行热加压，能够防止向设在芯片基板11的凸点11a的压力集中。另外，由具有第1弹性体8的硬度以上的硬度的第2弹性体9来支撑第1弹性体8的外周部，因此连接装置1能够防止由第1弹性体8造成的压力集中于芯片堆叠部件10的外周部。因此，连接装置1通过第1弹性体8对芯片堆叠部件10的上表面均匀地进行按压，能够防止芯片基板11的破裂，另外防止由破裂造成的芯片基板11间的连接可靠性、或芯片堆叠部件10与布线基板3的连接可靠性的下降。
由此，芯片堆叠部件10的电极与布线基板3的电极相接触，在该状态下绝缘性粘接膜17的粘合剂23热固化，从而可制造芯片堆叠部件10安装于布线基板3的连接构造体4。
此外，在本实施方式中作为表面安装部件2使用了芯片堆叠部件10，但作为表面安装部件2，也能够安装例如IC或LSI等的封装件部件、电阻或电容器等的芯片部件。另外，各向异性导电膜18或膏状的粘接剂6也能够用于布线基板3的电极与表面安装部件2的电极的连接。
[制造工序2]
接着，关于使用连接装置1来制造芯片堆叠部件10的工序进行说明。首先，作为利用连接装置1进行热加压工序的前工序，将多个芯片基板11以互相的凸点11a彼此能够接触的方式对位，形成经由绝缘性粘接膜17而层叠的芯片层叠体12。
接着，将芯片层叠体12载放于连接装置1的载放部5。此时，芯片层叠体12以加热按压头7来到正上的方式被对位而载放。
接着，如图5所示，以包围芯片层叠体12的周围的方式配置成为支撑构件的第2弹性体9，以覆盖芯片层叠体12之上、且由第2弹性体9支撑外周部的方式配置第1弹性体8，经由该第1弹性体8，将加热至既定温度的加热按压头7以既定压力、既定时间，对芯片层叠体12进行热加压。
此时，连接装置1通过经由具有上述既定弹性率的第1弹性体8对芯片层叠体12进行热加压，能够防止向设在芯片基板11的凸点11a的压力集中。另外，由具有第1弹性体8的硬度以上的硬度的第2弹性体9来支撑第1弹性体8，因此连接装置1能够防止由第1弹性体8造成的压力集中于芯片层叠体12的外周部。因此，连接装置1通过第1弹性体8对芯片层叠体12的上表面均匀地进行按压，能够防止芯片基板11的破裂，另外防止由芯片基板11的破裂造成的芯片层叠体12的芯片基板11间的连接可靠性的下降。
由此，构成芯片层叠体12的各芯片基板11，在凸点11a彼此连接的状态下，绝缘性粘接膜17的粘合剂23热固化，可制造芯片堆叠部件10。
另外，在半导体晶圆或布线基板3上进行该芯片堆叠部件10的制造工序也可以。通过在布线基板3上进行芯片堆叠部件10的制造工序，还能够同时进行芯片堆叠部件10的制造和芯片堆叠部件10的安装。在该情况下，在芯片层叠体12的最下层的芯片基板11与布线基板3的既定位置之间设置绝缘性粘接膜17或各向异性导电膜18等的粘接剂6，利用加热按压头7来成批地进行热加压。由此，通过芯片层叠体12被热加压，在芯片基板11的层间连接用的凸点11a相连接的状态下，连接了各芯片基板11的芯片堆叠部件10得以制造，并且能够制造该芯片堆叠部件10被安装于布线基板3的连接构造体4。
[其他实施例]
另外，如图6所示，连接装置1也可以通过与表面安装部件2或芯片层叠体12的数量相应地以格子状形成第2弹性体9，对多个电子部件同时进行热加压。在格子状形成的第2弹性体9的分割区域内配置表面安装部件2或芯片层叠体12。从上表面对表面安装部件2或芯片层叠体12进行按压的第1弹性体8，覆盖格子状形成的第2弹性体9的各格子之上，并且由第2弹性体9以格子状支撑包含外周部的整个面。由第2弹性体9构成的格子形状，可以为1行多个列、多个行多个列的任一种。
[实施例]
接着，关于本发明的实施例进行说明。实施例中，准备改变了第1、第2弹性体8、9的各硬度的实施例及比较例，使用各实施例及比较例所涉及的第1、第2弹性体8、9，利用连接装置1经由绝缘性粘接膜17对层叠了芯片基板11的芯片层叠体12进行热加压来制造芯片堆叠部件10。制造后，对芯片堆叠部件10的破裂（裂缝）的发生及芯片基板11间的连接可靠性进行了评价。
通过目视确认了有无破裂（裂缝）的发生。关于连接可靠性，对芯片堆叠部件10的初始导通电阻和经历了PCT实验（Pressure Cooker Test（压力锅试验）: 130℃ 85％RH300h）及TCT实验（Temperature Cycle Test（温度循环试验）: -55℃ 30min ⇔ 125℃30min，500循环）后的导通电阻值进行对比，将导通电阻值上升了30％以上的记为NG（×）。
各实施例及比较例所涉及的第1、第2弹性体8、9，全都使用硅酮橡胶形成。绝缘性粘接膜17使用环氧类固化树脂。芯片堆叠部件10将厚度50μm的芯片基板11层叠了4层。在各芯片基板11，层间连接用的凸点以25×2列（间距宽度40μm）形成。
利用加热按压头7的芯片层叠体12的热加压条件为230℃、10N、30sec。实施例及比较例所涉及的第1、第2弹性体8、9的橡胶硬度，全都是由JIS K 6253所规定的类型A硬度计测量的测定值。
实施例1中，相对于第1弹性体8的橡胶硬度为20，将第2弹性体9的橡胶硬度设为20。
实施例2中，相对于第1弹性体8的橡胶硬度为20，将第2弹性体9的橡胶硬度设为40。
实施例3中，相对于第1弹性体8的橡胶硬度为20，将第2弹性体9的橡胶硬度设为60。
实施例4中，相对于第1弹性体8的橡胶硬度为20，将第2弹性体9的橡胶硬度设为80。
比较例1中，相对于第1弹性体8的橡胶硬度为40，将第2弹性体9的橡胶硬度设为20。
实施例5中，相对于第1弹性体8的橡胶硬度为40，将第2弹性体9的橡胶硬度设为40。
实施例6中，相对于第1弹性体8的橡胶硬度为40，将第2弹性体9的橡胶硬度设为60。
实施例7中，相对于第1弹性体8的橡胶硬度为40，将第2弹性体9的橡胶硬度设为80。
比较例2中，相对于第1弹性体8的橡胶硬度为60，将第2弹性体9的橡胶硬度设为20。
比较例3中，相对于第1弹性体8的橡胶硬度为60，将第2弹性体9的橡胶硬度设为40。
实施例8中，相对于第1弹性体8的橡胶硬度为60，将第2弹性体9的橡胶硬度设为60。
实施例9中，相对于第1弹性体8的橡胶硬度为60，将第2弹性体9的橡胶硬度设为80。
比较例4中，相对于第1弹性体8的橡胶硬度为80，将第2弹性体9的橡胶硬度设为20。
比较例5中，相对于第1弹性体8的橡胶硬度为80，将第2弹性体9的橡胶硬度设为40。
比较例6中，相对于第1弹性体8的橡胶硬度为80，将第2弹性体9的橡胶硬度设为60。
比较例7中，相对于第1弹性体8的橡胶硬度为80，将第2弹性体9的橡胶硬度设为80。
[表1]
表1示出测定结果。如表1所示，实施例1～9中，全都是第2弹性体9的硬度为第1弹性体8的硬度以上，因此通过由第2弹性体9支撑第1弹性体8，能够分散向凸点11a集中的压力，并且能够防止由第1弹性体8造成的向芯片层叠体12的外周部的压力集中，即使在将极薄为厚度50μm的芯片基板11层叠的芯片堆叠部件10的制造中，也能够防止破裂。另外，即使经历了PCT实验及TCT实验后，导通电阻值的上升率也不到30％，各芯片基板11的层间连接也良好。
另一方面，比较例1～3中，全都是第2弹性体9的硬度比第1弹性体8的硬度更低，不能由第2弹性体9来防止由第1弹性体8造成的向芯片层叠体12的外周部的压力集中，发生了破裂。另外，经历了PCT实验及TCT实验后的导通电阻值的上升率为30％以上。因此，对于将厚度极薄为50μm的芯片基板11层叠的芯片堆叠部件10的制造是不行的。
另外，比较例4～7中，第1弹性体8的橡胶硬度为80较硬，因此不能由第1弹性体8分散向凸点11a集中的压力，向凸点11a的压力集中造成的破裂发生。另外，经历了PCT实验及TCT实验后的导通电阻值的上升率为30％以上。因此，对于将厚度极薄为50μm的芯片基板11层叠的芯片堆叠部件10的制造是不行的。
[标号说明]
1 连接装置，2 表面安装部件，3 布线基板，4 连接构造体，5载放部，6 粘接剂，7加热按压头，8 第1弹性体， 9第2弹性体，10 芯片堆叠部件，11 芯片基板，12 芯片层叠体，17 绝缘性粘接膜，18 各向异性导电膜，23 粘合剂，24 导电性粒子，25 剥离膜，26 轴。

Claims (17)

1.一种连接装置，具有：
载放部，载放与热固化性的粘接剂层层叠的电子部件；
加热按压头，对所述电子部件进行加热按压；
第1弹性体，配置在所述电子部件与所述加热按压头的按压面之间，对所述电子部件的上表面进行按压；以及
支撑构件，配置在所述电子部件的周围，并且在所述第1弹性体对所述电子部件的上表面进行按压时支撑所述第1弹性体而不按压所述电子部件。
2.如权利要求1所述的连接装置，所述支撑构件是具有所述第1弹性体的硬度以上的硬度的第2弹性体。
3.如权利要求2所述的连接装置，所述第1弹性体和所述第2弹性体的硬度，在利用JISK 6253所规定的类型A硬度计进行的测定中，处于20～60的范围。
4.如权利要求1所述的连接装置，通过将所述支撑构件以格子状设置，形成载放所述电子部件的多个区域。
5.一种连接构造体的制造方法，具有：
将安装电子部件的基板载放于载放部的工序；
经由热固化性的粘接剂将电子部件搭载于所述载放部所载放的基板的工序；以及
将第1弹性体配置于所述电子部件的上表面侧，并且将支撑所述第1弹性体的支撑构件配置于所述电子部件的周围，边用所述支撑构件支撑所述第1弹性体边利用加热按压头经由所述第1弹性体对所述电子部件的上表面进行热加压而安装于所述基板的工序。
6.如权利要求5所述的连接构造体的制造方法，所述支撑构件是具有所述第1弹性体的硬度以上的硬度的第2弹性体。
7.如权利要求6所述的连接构造体的制造方法，所述第1弹性体和所述第2弹性体的硬度，在利用JIS K 6253所规定的类型A硬度计进行的测定中，处于20～60的范围。
8.如权利要求7所述的连接构造体的制造方法，所述电子部件是层叠多个芯片基板、各芯片基板电气、机械地连接的芯片堆叠部件。
9.如权利要求7所述的连接构造体的制造方法，所述电子部件是经由热固化性的粘接剂层叠多个芯片基板的芯片层叠体。
10.如权利要求5所述的连接构造体的制造方法，由所述支撑构件分割为载放所述电子部件的多个区域，同时安装多个所述电子部件。
11.一种芯片堆叠部件的制造方法，在层叠多个芯片基板、各芯片基板电气、机械地连接的芯片堆叠部件的制造方法中，具有：
通过将设在芯片基板的一个面的凸点经由热固化性的粘接剂载放于设在邻接的芯片基板的另一个面的电极上，从而形成层叠多个芯片基板的芯片层叠体的工序；以及
将第1弹性体配置于所述芯片层叠体的上表面侧，并且将支撑所述第1弹性体的支撑构件配置于所述芯片层叠体的周围，边用所述支撑构件支撑所述第1弹性体边利用加热按压头经由所述第1弹性体对所述芯片层叠体的上表面进行热加压的工序。
12.如权利要求11所述的芯片堆叠部件的制造方法，所述支撑构件是具有所述第1弹性体的硬度以上的硬度的第2弹性体。
13.如权利要求12所述的芯片堆叠部件的制造方法，所述第1弹性体和所述第2弹性体的硬度，在利用JIS K 6253所规定的类型A硬度计进行的测定中，处于20～60的范围。
14.如权利要求13所述的芯片堆叠部件的制造方法，所述芯片层叠体至少1层包含厚度100μm以下的芯片基板。
15.如权利要求11所述的芯片堆叠部件的制造方法，由所述支撑构件分割为载放所述芯片堆叠部件的多个区域，同时制造多个所述芯片堆叠部件。
16.如权利要求11所述的芯片堆叠部件的制造方法，经由热固化性的粘接剂将所述芯片层叠体载放于基板或晶圆上，成批地进行热加压。
17.一种电子部件的安装方法，具有：
将安装电子部件的基板载放于载放部的工序；
经由热固化性的粘接剂将电子部件搭载于所述载放部所载放的基板的工序；以及
将第1弹性体配置于所述电子部件的上表面侧，并且将支撑所述第1弹性体的支撑构件配置于所述电子部件的周围，边用所述支撑构件支撑所述第1弹性体边利用加热按压头经由所述第1弹性体对所述电子部件的上表面进行热加压的工序。
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