TWI567835B - 以低輪廓包覆體包覆接合線之技術 - Google Patents

以低輪廓包覆體包覆接合線之技術 Download PDF

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TWI567835B
TWI567835B TW103131388A TW103131388A TWI567835B TW I567835 B TWI567835 B TW I567835B TW 103131388 A TW103131388 A TW 103131388A TW 103131388 A TW103131388 A TW 103131388A TW I567835 B TWI567835 B TW I567835B
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covering
cladding
truncated
die
bonding wire
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TW103131388A
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TW201523750A (zh
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清華 陳
麥可Ｗ 庫米比
張竹卿
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惠普發展公司有限責任合夥企業
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    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/14—Structure thereof only for on-demand ink jet heads
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    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
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    • B41J2/1433—Structure of nozzle plates
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Description

以低輪廓包覆體包覆接合線之技術
本發明係有關於以低輪廓包覆體包覆接合線之技術。
打線接合包含在線之任一端部處構成一接合，通常將一端部附裝至一基板以及另一端部附裝至一電路板。該等接合可為楔形接合其中該線係使用力及/或超音波能量直接地接合至該電路板或是基板。球接合，對於楔形接合的一可交替方案，包含構成一導電球並電氣結合該球至該線的端部與至該基板或是電路板。在完成電氣連接後，該線及其之連接係以陶瓷、塑膠或環氧樹脂包覆，避免實體的損害或腐蝕。
依據本發明之一具體實施例，係特地提出一種用於以低輪廓包覆體包覆接合線之裝置，其包含：一接合線，其在一第一端部上連接至一晶粒以及在一第二端部上連接至一電路組件；以及一配置覆蓋該接合線的包覆體材料；其中該包覆體包含一截頭形體。
100、300‧‧‧裝置
102、220、302‧‧‧包覆體
104、208、304‧‧‧接合線
106、236‧‧‧化合物
108、206‧‧‧晶粒
110‧‧‧墨水流體路徑
112‧‧‧聚合物層
114‧‧‧第一端部
116、210‧‧‧印刷電路板
118‧‧‧第二端部
200‧‧‧第一階段
202、314‧‧‧間隙
204‧‧‧聚合物覆蓋層
212‧‧‧第二階段
214‧‧‧第三階段
216、306‧‧‧液體樹脂
218‧‧‧固化形體
222‧‧‧長度
224‧‧‧高度
225‧‧‧第四階段
226‧‧‧截頭形體
228‧‧‧衝壓機
230、316‧‧‧塗層
232‧‧‧截頭部分
234‧‧‧基底
235‧‧‧截頭高度
308‧‧‧施配器
310‧‧‧導件
312‧‧‧底側
400‧‧‧方法
402、404‧‧‧步驟
該等伴隨的圖式圖示本文說明的該等原理之不同的實例。該等圖示的實例係僅為實例且未限制該等申請專利範圍之範疇。
圖1係為根據本文說明的該等原理之一具有覆蓋一接合線的低輪廓包覆體的一裝置之一實例之一圖解。
圖2係為根據本文說明的該等原理之製造具有低輪廓包覆體的一裝置之該等階段的一實例之圖解。
圖3係為根據本文說明的該等原理之一具有覆蓋一接合線的低輪廓包覆體的一裝置之一實例的一圖解。
圖4係為根據本文說明的該等原理之用於包覆具有低輪廓包覆體的一接合線的一方法之一實例的一圖解。
熱噴墨印表機利用包含噴墨噴嘴的晶粒與一印刷電路板之間的接合線。多數形式之熱噴墨產品的該等晶粒尺寸係夠大因此該等包覆體珠係易於安置遠離該第一噴嘴，以避免與使用該列印頭發生任何顯著的相互作用。然而，為了完成具有較緊密空間的產品，已使用一薄膜包覆體製程以該一方式分配黏著性包覆體降低該包覆體高度。儘管該一薄膜包覆體製程降低了該總體的包覆體高度，但該製程係為複雜的，對黏著劑圖案敏感，易於在使用列印頭期間剝落，並傾向於在該包覆體薄膜下方藏匿滯留的空氣。
本文說明的該等原理包括一裝置容許該包覆體更接近一列印頭之該等噴嘴，而無以上說明該等薄膜包覆 體程序發生的缺點。該一裝置可包括與位在該線之一第一端部上連接至一晶粒以及位在該線之一第二端部上連接至一電路組件的一接合線。一包覆體材料係配置覆蓋該接合線，於該處該包覆體具有一截頭形體。當該包覆體材料係經初始地沉積時，該包覆體材料成一係由該包覆體材料表面張力以及其他內固性特性所決定的形體。為了以該一方式在該包覆體之底座處沉積足夠量的包覆體材料，該包覆體之材料之總體高度將夠高以妨礙使用該等列印頭。例如，當擦拭該等列印頭之該表面時，墨水及碎屑會在該包覆體材料上被捕獲。保持該包覆體材料的高度為低通常避免以上提及的問題發生。為保持該包覆體材料的總體高度為低，諸如在數百微米的高度以下，由該包覆體材料表面張力構成的形體係為截頭的。該截頭程序能夠藉由利用一衝壓壓縮該包覆體材料、研磨去除該包覆體材料之一頂部部分、容許一部分之該包覆體材料在與受包覆之表面隔開一預定間隙的一導件下方芯吸、其他程序或其等之結合者而進行。
於以下的說明中，為了解釋，為了提供本系統 與方法之詳盡的瞭解而提出複數之具體細節。然而，熟知此技藝之人士顯而易見的是無該等具體細節亦能夠實踐本裝置、系統及方法。於說明書中所參考的「一實例」或是相似的表達方式意指所說明的特別特徵、結構或是特性係包括在至少該一實例中，但非必然地於其他實例中。
圖1係為根據本文說明的該等原理之一具有覆蓋 一接合線104的低輪廓包覆體102的一裝置100之一實例之一圖解。於此實例中，一化合物106支撐一其中具有所構成的墨水流體路徑110的晶粒108。該晶粒108係以一聚合物層112覆蓋。該接合線104係在一第一端部114處接合至該晶粒108，並於一第二端部118處接合至一印刷電路板116。該包覆體102覆蓋該接合線104。
化合物106可以任何適當類型的材料製成。於一 些實例中，該化合物106係為一環氧模壓化合物。該化合物106可針對適合用以支撐該晶粒108以及噴墨應用之特性加以選定。
該晶粒108可為一半導體材料之塊件。於一些實 例中，在該晶粒108上製作一功能性電路。通常，積體電路係以一大批方式在一電子級矽或其他半導體材料之一單一晶圓上經由微影蝕刻製程，諸如光微影蝕刻術產生。晶圓可以被切成多個片體，其各含有一複製電路。這些片體之各者可稱為一晶粒。在圖1之範例中，晶粒108亦包括用於噴墨噴嘴的開口。於一些範例中，此等開口被成形以形成噴嘴。在其他的範例中，此等開口被成形以容納噴嘴。
可使用任一適合類型之半導體材料建構該晶粒108。例如，可使用矽作為該晶粒材料。然而，於其他實例中，亦可使用如同銀之金屬併入該晶粒108。
該印刷電路板116可包括與該晶粒108中該積體電路之該等部分連通的電路組件。當要發射時該等電路組件與連通可指示該噴墨列印頭。該接合線104橋接覆蓋該 電氣絕緣化合物106的該等電路組件，從而容許發射信號由一場外位置與該等列印頭連通。
該接合線104可利用任何適合形式的接合技術接 合至該晶粒108或是接合至該印刷電路板116。例如，該等接合可採楔形接合、球接合、其他形式之接合或其等之結合形式而構成。該接合線104亦可包括任何適合形式之形狀、長度或是幾何形狀。例如，該接合線104可具有15微米至數百微米的一直徑。
再者，該接合線104可以任何適合類型之材料製 成。例如，該接合線104可由金、鋁、銅、鎳、銀、其他類型之材料或其等之結合形式所製成。再者，該接合線104可為一單一材料或是多重材料，諸如具有至少一不同類型之材料塗層的接合線。
銅可用於尺寸範圍上至75微米的精細球打線接 合。銅接合線能夠用在較小的直徑同時提供如同金的相似性能，而無高的材料成本。上至250微米的銅接合線能夠以正確的設置參數成功地楔形接合。大直徑的銅接合線可取代鋁接合線，其中使用高的電流承載能力或是其中具有複雜幾何形狀的問題。製造者所使用的退火及程序工作增強了使用大直徑銅接合線以楔形接合至矽而不致對該晶粒造成損害的能力。
以控制量之鈹及/或其他成分摻雜之金可用於球接合。此製程使二材料使用熱、壓力及超音波能量接合在一起。連接尺寸、接合強度及傳導性參數通常決定最適合 用於一特定金打線接合應用的接合線尺寸。
根據本文說明的該等原理可使用任一適合形式 之包覆體102。例如，該包覆體102可由陶瓷、塑膠、環氧樹脂、熱固性聚合物、矽氧烷、聚氨基甲酸酯、另外類型之材料或是其之結合物製成。該包覆體102可用以防止實體損害、腐蝕、濕氣污染或是其他非所欲的狀況影響該接合線、該印刷電路板116、晶粒108之部分、其他電子組件或其等之結合物。
該包覆體材料可藉由諸如利用一針配送機構、一 噴射配送機構、一噴灑塗佈機構、一黏著劑衝壓機構、另一形式之機構、或其等之結合者，將一液體樹脂灌注覆蓋所需區域，而施加至該印表機之該所需區域，直至該區域係以該液體樹脂覆蓋為止。在缺少主動式成形機構的狀況下，該包覆體材料將構成藉由該包覆體材料表面張力、流變性、黏度以及其他特性所決定的一形體。
於一些實例中，該包覆體材料係主動地經塑 形，同時將液體樹脂施敷至該所需區域。例如，一導件可在該所需區域之一部分的上方以一預定的間隙間隔開，同時施敷該液體樹脂。該導件可具有一特性致使該液體樹脂經由一芯吸作用經汲取位在該導件之一底側下方。因此，該導件引導該液體樹脂覆蓋將包覆的該區域。該預定的間隙限制該包覆體輪廓的高度。於一些實例中，該包覆體之該高度係小於一百微米。於該一實例中，該預定的間隙亦係小於一百微米。該導件之底側能夠強制該包覆體材料具 有一高帽式輪廓。於該一實例中，該導件之該底側的幾何形狀產生了該包覆體材料形體之該頂部的幾何形狀。因此，假若該導件之該底側具有一平坦形狀，則該包覆體之該頂部表面亦將為平坦的。
於其他實例中，可容許該液體樹脂根據該液體 樹脂的表面張力以及其他的固有特性構成其之形體。於該一實例中，該液體樹脂可利用一衝壓機或是另一裝置加以壓縮。因此，該包覆體將構成一輪廓反映該衝壓機之該底側之幾何形狀。於該等實例中，該包覆體將產生一截頭形體。
此導件及/或衝壓機可經加熱以降低該包覆體的 黏度，容許該包覆體更為自由地流動，並加速該包覆體材料的固化。當該導件或該衝壓機經移開時，該包覆體材料係容許冷卻並增加其之黏度從而構成一固體化的形體。在一些使用衝壓機的實例中，在施用該衝壓機之前可將該包覆體固化。於該等實例中，一加熱的衝壓機可提供足夠的能量以軟化該包覆體材料，足以在該衝壓機施加的壓力下流動及/或壓縮，同時該衝壓機係與該包覆體接觸。一經去除衝壓機，該包覆體材料即冷卻並因此再次固化。
於其他實例中，該包覆體之該截頭形體可經由一適合的機構構成。例如，該截頭形體可藉由去除該包覆體之一頂部部分而構成。該一部分可藉由研磨、切片、破裂方式去除或是其他方式將該頂部部分分解以去除。
根據本文說明的該等原理可使用任何適合形式 的截頭形體。儘管以上該等實例特別地提到該包覆體材料之一平坦表面，但該截頭形體亦可包括由構成該截頭形狀的該機構所產生的特徵。例如，該截頭形體可包括一傾斜朝向該晶粒108的平坦表面°因此，擦拭器、工具、保養該晶粒108之個人雙手等等能夠接近該晶粒108而不受該包覆體之晶粒側上該包覆體之高度干擾。於該一實例中，該包覆體之該印刷電路板側因此可高於該晶粒側。該一實例仍容許接近該晶粒108，但提供更多的包覆體覆蓋該印刷電路板116，可由附加的包覆體得益。
圖2係為根據本文說明的該等原理之製造具有低 輪廓包覆體的一裝置之該等階段的一實例之圖解。於此實例中，製造程序的一第一階段200包含在覆蓋該晶粒206的該聚合物覆蓋層204中構成間隙202。該等間隙202係構成覆蓋在該晶粒206上的該等處所，於該等處所需要與該晶粒206及該接合線208電氣接觸。於此階段期間，位在該印刷電路板210上的該處所亦係經製備以接收該接合線208其之端部。
於一第二階段212期間，該接合線208係接合至 該晶粒206及該印刷電路板210。可使用任一適合形式的接合以將該晶粒206及印刷電路板210電氣連接至該接合線208。例如，該接合可為楔形接合、球接合、另一形式之接合或其等之結合形式。該接合線208與該晶粒206之間的接合係製成在該聚合物覆蓋層204中構成的該間隙202中。
於一第三階段214，施敷液體樹脂216覆蓋該接 合線208。當該液體樹脂216固化時，該液體樹脂216構成一固化形體218作為包覆體220。該固化形體218係根據該液體樹脂的表面張力、溫度、流變特性、黏度、其他固有特性及其等之結合者而構成。為了沿著該接合線208之長度222提供足夠的包覆體220，該包覆體的固化形體218之該高度224係足夠高以致該包覆體220可能干擾保養該等列印頭。例如，該包覆體220之該高度224會與擦拭動作干擾或是容許工具接近該晶粒206。
於一第四階段225，構成該包覆體之該截頭形體 226。於此實例中，一衝壓機228在該固化形體218上方壓按以構成該截頭形體226。該衝壓機228可包括一塗層230，防止該包覆體220與該衝壓機228黏合。該塗層230可為任一適合類型之塗層。例如，該塗層可為塑膠、聚乙二醇對苯二甲酸酯、聚四氟乙烯、另外類型之材料或其等之結合物。
再者，該衝壓機228可經加熱以在該衝壓機228 壓縮該包覆體220時降低該包覆體的黏度。因此，該包覆體220將具有一截頭形體226。
該截頭形體226可具有一部分保留該固化形體 218及一截頭部分232。於圖2之該實例中，該固化形體218係保持接近於該包覆體220之基底234，以及該截頭部分232係為該平坦部分。於此實例中，該截頭形體226具有一高帽式輪廓。儘管此實例已具體地相關於一平坦表面加以說明，但於其他的實例中，該截頭形體具有一坡度的、傾 斜的、彎曲的或是其他形式之表面，容許接近該晶粒206。
於一些實例中，該包覆體220由其之基底，諸如 該包覆體220接觸化合物236處，至該截頭部分232的截頭高度235係小於一百微米。於一些實例中，該截頭高度係介於二十五微米與一百微米之間。於該一實例中，該衝壓機228係移至距該化合物236的適當距離內。該衝壓機228可立即地移至該截頭高度235，或該衝壓機228可移至該截頭高度235之一段預定時間期間，以容許來自於該衝壓機228的熱量轉移至該包覆體220，或是容許該包覆體220利用由該衝壓機228施加的一增加的壓力總量流動。
圖3係為根據本文說明的該等原理之一具有覆蓋 一接合線304的低輪廓包覆體302的一裝置300之一實例的一圖解。於此實例中，該液體樹脂306係自該施配器308施敷至想要有包覆體302的區域。一導件310係經定位接近施敷液體樹脂306的區域。該導件310係足夠接近施敷的液體樹脂306，該液體樹脂306係受吸引至該導件310之底側312並係沿著該底側312之長度芯吸。
可根據本文說明之該等原理使用任一適合形式 之施配器308。例如，該施配器308可為一針式施配器、下落式施配器、噴射式施配器、噴灑式施配器、另外形式之施配器或是其等之結合者。
該導件310係經定位以在該裝置300與該導件310 之該底側312之間構成一間隙314，其等於針對該包覆體形 體之所需的截頭高度。由於該導件310及該液體樹脂306的芯吸特性，所以該液體樹脂306係經汲取進入並填注該間隙314。
根據本文說明的該等原理可以任何適合的方式 構成該間隙314。例如，一間隔件可併入該導件310之底側312以確保該間隙314係為正確的。該一間隔件可包括一機構，當該液體樹脂306施敷至需要的區域時用以致使該液體樹脂306環繞該間隔件通過。於其他實例中，一電腦建置機構可使用距離感測器，用以決定介於該導件310之該底側312與該裝置300之該頂部表面間的距離。該一距離感測器可使用聲音的傳輸、光波的傳輸、一機械式探針、另外的機構或其等之結合。於一些實例中，該等距離感測器係直接地併入該導件310或是該衝壓機228(圖2)。
當該液體樹脂填注該導件310下方的該空間時， 該導件310可為不動的或可沿著該接合線304之長度連同該施配器308移動。因此，該間隙314係沿著該接合線的長度逐漸地移動，並且額外的液體樹脂306填注新的空間。因此，該液體樹脂沿著該接合線304之長度固化。至此所得的形狀如同該導件310係為截頭的，致使該形狀具有一平坦的頂部，其若與該導件310沒有主動交互作用則將不會形成。該導件310，如同該衝壓機228(圖2)，可具有一塗層316以防止該液體樹脂306附加至該導件310。
該液體樹脂306可在適當處固化，而同時該導件310仍係構成該間隙314。於一些實例中，該液體樹脂306 係在去除該導件310之前部分地固化。該固化製程可在該液體樹脂306容許以空氣冷卻時進行。於其他實例中，該固化製程係藉由主動地冷卻該液體樹脂306成包覆體而加速。
於一些實例中，該包覆體係利用暴露至某些紫 外光波長而在適當位置處固化。該等光波長可經由導件310、該衝壓機228(圖2)、另外形式的工具或其等之結合者引導至該包覆體。
儘管該等實例已相關於藉由衝壓以及使用一導 件構成該截頭形體加以說明，但可使用任何適合用於構成該截頭形體的機構。例如，該截頭形體可藉由研磨、裝葉片、切片或是除此之外使用另外形式之工具以塑形該截頭而構成。
圖4係為根據本文說明的該等原理之用於包覆具 有低輪廓包覆體的一接合線的一方法400之一實例的一圖解。於此實例中，該方法400包括施用(步驟402)包覆體覆蓋一接合線，其係在一第一端部上連接至一晶粒以及在一第二端部上連接至一電路組件，並且將該包覆體之一形狀截頭(步驟404)以構成一截頭形體。
於一些實例中，該截頭形體係經由一壓縮機構 構成。例如，可使用一衝壓機將該包覆體之該表面弄平或是將該包覆體的高度縮短。於其他實例中，其他的裝置可用以弄平該頂部並降低該包覆體的高度。於一些實例中，該壓縮的包覆體材料可具有較其他包覆體材料為高的一密 度，容許保持其之由該包覆體材料的表面張力及其他性質所決定的形狀。該壓縮可提供將氣泡自該包覆體去除的實例。再者，該壓縮可助於在該晶粒、接合線、印刷電路板或該裝置與該包覆體之其他表面區域之間構成一較強的接合。因此，該包覆體可較不易分層。
於一些實例中，該形體係藉由容許該包覆體在 一導件下方芯吸而同時將該包覆體沉積並沿著該接合線移動該導件而截頭。於其他的實例中，該截頭形體係藉由研磨或是以其他方式去除一部分之該包覆體而構成。
在包覆製程期間，可控制用以構成該包覆體材 料的該液體樹脂之溫度。於施敷製程、壓縮製程、研磨製程或是用於構成該等截頭形體的其他製程期間，可使用一機構以使該液體樹脂具有一足夠高的溫度而容易流動。同樣地，當該液體樹脂係構成欲的截頭形體時，該液體樹脂可主動地經冷卻以使該包覆體保持所欲的形狀。主動式冷卻可藉由使用風扇、冷卻該衝壓機或該導件、或將冷卻該包覆體的其他機構而進行。
本文中說明的該等原理之一優點在於該衝壓、 引導、裝葉片、研磨或是以其他方式構成截頭形體的該等製程，與經由一薄膜沉積技術產生一低輪廓包覆體的製程比較係相對地較不昂貴。再者，本文中說明的該等原理可包含用以在施敷液體樹脂時構成該截頭形體的一單一製程。於其他實例中，本文中說明的該等原理可包含複數製程，諸如首先沉積該包覆體，容許該包覆體基於該包覆體 的固有性質而形成對於該包覆體而言之任何固有的形狀，並將此自然形狀截頭。
再者，本文中說明的該等原理考量到讓該包覆 體更接近該等列印頭及/或噴嘴。該一優點容許印表機中電子元件(或印表機本身)製作得更小。因此，該等印表機可較價廉且更為小型化。
儘管本文所說明的該等原理已相關於特定形式 之裝置加以說明，但管本文所說明的該等原理可應用在任一適合形式之裝置。例如，本文所說明的該等原理可應用在印表機、微電子組件、其他形式之裝置或其等之結合者。
該先前說明係僅呈現以圖解及說明該等所說明 的原理之實例。此說明並不意欲為詳盡無疑的或是限定該等原理應用在所揭示之任何明確的形式。根據以上講授內容可作複數修改及變化。
100‧‧‧裝置
102‧‧‧包覆體
104‧‧‧接合線
106‧‧‧化合物
108‧‧‧晶粒
110‧‧‧墨水流體路徑
112‧‧‧聚合物層
114‧‧‧第一端部
116‧‧‧印刷電路板
118‧‧‧第二端部

Claims (10)

  1. 一種用於以低輪廓包覆體包覆接合線之裝置，其包含：一接合線，其在一第一端部上連接至一晶粒及在一第二端部上連接至一電路組件；以及配置覆蓋該接合線的一包覆體材料；其中該包覆體包含一截頭形體，且其中該截頭形體包含一高帽式輪廓。
  2. 如請求項1之裝置，其中該截頭形體係藉由在該包覆體包含由該包覆體的一表面張力所決定的一沉積形體時壓縮該包覆體而構成。
  3. 如請求項1之裝置，其中該截頭形體係藉由沿著一導件之一底側芯吸該包覆體所構成。
  4. 如請求項1之裝置，其中該截頭形體係藉由在該包覆體包含由該包覆體的一表面張力所決定的一沉積形體時去除該包覆體之一部分而構成。
  5. 如請求項1之裝置，其中該晶粒包含一噴墨噴嘴。
  6. 如請求項1之裝置，其中該包覆體的高度係小於一百微米。
  7. 如請求項1之裝置，其中該接合線係併入一列印頭。
  8. 一種用於以低輪廓包覆體包覆接合線的方法，其包含：施加包覆體覆蓋一接合線，該接合線在一第一端部上連接至一晶粒及在一第二端部上連接至一電路組件；以及 將該包覆體之一形狀截頭以構成一截頭形體，其中將該形狀截頭包括選自於下列步驟所組成之群組的一步驟：以一衝壓機壓縮該包覆體；研磨去除該包覆體之一部分；及容許在一導件下方芯吸該包覆體，同時沉積該包覆體且沿著該接合線之一長度移動該導件。
  9. 如請求項8之方法，其中以該衝壓機壓縮該包覆體包括主動地加熱該衝壓機同時壓縮該包覆體。
  10. 一種用於以低輪廓包覆體包覆接合線的印表機，其包含：一接合線，其係以一第一端部連接至結合一噴墨噴嘴的一晶粒，且係以一第二端部連接至一電路組件；以及配置覆蓋該接合線的一包覆體材料；其中該包覆體包含具有一在高度上小於一百微米之輪廓的一截頭形體，且其中該截頭形體包含一高帽式輪廓。
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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3362292B1 (en) 2015-10-15 2022-03-09 Hewlett-Packard Development Company, L.P. Molded print head comprising an interposer and method for manufacturing a molded print head comprising an interposer
EP3606763A4 (en) * 2017-07-26 2020-11-11 Hewlett-Packard Development Company, L.P. FORMATION OF NOZZLE CONTACTS
WO2020101659A1 (en) * 2018-11-14 2020-05-22 Hewlett-Packard Development Company, L.P. Fluidic die assemblies with rigid bent substrates

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080158298A1 (en) * 2006-12-28 2008-07-03 Serbicki Jeffrey P Printhead wirebond encapsulation
CN101341028A (zh) * 2005-10-24 2009-01-07 惠普开发有限公司 封装电连接部分
WO2009039550A1 (en) * 2007-09-25 2009-04-02 Silverbrook Research Pty Ltd Method of wire bond encapsulation profiling

Family Cites Families (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5018003A (en) * 1988-10-20 1991-05-21 Mitsubishi Denki Kabushiki Kaisha Lead frame and semiconductor device
JPH03197147A (ja) * 1989-12-27 1991-08-28 Seiko Instr Inc サーマルヘッドの実装構造
US5367766A (en) * 1990-08-01 1994-11-29 Staktek Corporation Ultra high density integrated circuit packages method
IT1247649B (it) * 1990-10-31 1994-12-28 Sgs Thomson Microelectronics Procedimento di incapsulamento in resina di un dispositivo a semiconduttore di potenza montato su dissipatore allontanando i reofori dal dissipatore mediante l'azione del controstampo in fase di chiusura dello stampo
US5420752A (en) * 1993-08-18 1995-05-30 Lsi Logic Corporation GPT system for encapsulating an integrated circuit package
US6359335B1 (en) * 1994-05-19 2002-03-19 Tessera, Inc. Method of manufacturing a plurality of semiconductor packages and the resulting semiconductor package structures
US5682673A (en) * 1995-04-17 1997-11-04 Ipac, Inc. Method for forming encapsulated IC packages
JPH09115936A (ja) * 1995-10-23 1997-05-02 Mitsubishi Electric Corp 半導体装置の樹脂封止用金型
US6071427A (en) * 1998-06-03 2000-06-06 Lexmark International, Inc. Method for making a printhead
EP1095773B1 (en) * 1999-10-29 2003-07-09 Hewlett-Packard Company, A Delaware Corporation Inkjet printhead having improved reliability
US6246111B1 (en) * 2000-01-25 2001-06-12 Siliconware Precision Industries Co., Ltd. Universal lead frame type of quad flat non-lead package of semiconductor
JP4493174B2 (ja) * 2000-07-27 2010-06-30 京セラ株式会社 サーマルヘッド
US6577013B1 (en) * 2000-09-05 2003-06-10 Amkor Technology, Inc. Chip size semiconductor packages with stacked dies
US6340846B1 (en) 2000-12-06 2002-01-22 Amkor Technology, Inc. Making semiconductor packages with stacked dies and reinforced wire bonds
US6720207B2 (en) * 2001-02-14 2004-04-13 Matsushita Electric Industrial Co., Ltd. Leadframe, resin-molded semiconductor device including the leadframe, method of making the leadframe and method for manufacturing the device
US6727115B2 (en) * 2001-10-31 2004-04-27 Hewlett-Packard Development Company, L.P. Back-side through-hole interconnection of a die to a substrate
US6884663B2 (en) * 2002-01-07 2005-04-26 Delphon Industries, Llc Method for reconstructing an integrated circuit package using lapping
US6743660B2 (en) * 2002-01-12 2004-06-01 Taiwan Semiconductor Manufacturing Co., Ltd Method of making a wafer level chip scale package
US6653723B2 (en) 2002-03-09 2003-11-25 Fujitsu Limited System for providing an open-cavity low profile encapsulated semiconductor package
US20060051948A1 (en) * 2003-02-04 2006-03-09 Microfabrica Inc. Microprobe tips and methods for making
US7562428B2 (en) * 2002-09-24 2009-07-21 Brother Kogyo Kabushiki Kaisha Manufacturing an ink jet head
US6987058B2 (en) * 2003-03-18 2006-01-17 Micron Technology, Inc. Methods for underfilling and encapsulating semiconductor device assemblies with a single dielectric material
JP4340086B2 (ja) * 2003-03-20 2009-10-07 株式会社日立製作所 ナノプリント用スタンパ、及び微細構造転写方法
US7527090B2 (en) * 2003-06-30 2009-05-05 Intel Corporation Heat dissipating device with preselected designed interface for thermal interface materials
US7771917B2 (en) * 2005-06-17 2010-08-10 Micron Technology, Inc. Methods of making templates for use in imprint lithography
KR100761387B1 (ko) * 2005-07-13 2007-09-27 서울반도체 주식회사 몰딩부재를 형성하기 위한 몰드 및 그것을 사용한 몰딩부재형성방법
CN2846128Y (zh) * 2005-07-27 2006-12-13 山东华菱电子有限公司 热敏打印头
JP4939184B2 (ja) * 2005-12-15 2012-05-23 キヤノン株式会社 液体吐出ヘッドの製造方法
US7819506B2 (en) * 2006-03-29 2010-10-26 Lexmark International, Inc. Flexible encapsulant materials for micro-fluid ejection heads and methods relating thereto
CN101211897B (zh) * 2006-12-28 2011-12-07 中芯国际集成电路制造(上海)有限公司 多芯片半导体封装结构及封装方法
KR100843342B1 (ko) * 2007-02-12 2008-07-03 삼성전자주식회사 Ｕｖ 나노 임프린트 리소그래피 수행 공정 및 장치
US7854877B2 (en) * 2007-08-14 2010-12-21 Asml Netherlands B.V. Lithography meandering order
KR101289337B1 (ko) * 2007-08-29 2013-07-29 시게이트 테크놀로지 엘엘씨 양면 임프린트 리소그래피 장치
US7669751B2 (en) * 2007-09-25 2010-03-02 Silverbrook Research Pty Ltd Method of forming low profile wire bonds between integrated circuits dies and printed circuit boards
US7741720B2 (en) * 2007-09-25 2010-06-22 Silverbrook Research Pty Ltd Electronic device with wire bonds adhered between integrated circuits dies and printed circuit boards
JP2009184164A (ja) * 2008-02-05 2009-08-20 Toshiba Hokuto Electronics Corp サーマルプリントヘッド
US8035211B2 (en) 2008-03-26 2011-10-11 Stats Chippac Ltd. Integrated circuit package system with support structure under wire-in-film adhesive
JP5117318B2 (ja) * 2008-08-07 2013-01-16 株式会社日立ハイテクノロジーズ ナノインプリント用スタンパ及び該スタンパを使用する微細構造転写装置
US8039938B2 (en) * 2009-05-22 2011-10-18 Palo Alto Research Center Incorporated Airgap micro-spring interconnect with bonded underfill seal
CN201442383U (zh) * 2009-07-01 2010-04-28 山东华菱电子有限公司 热敏打印头
KR20120040536A (ko) * 2010-10-19 2012-04-27 삼성전자주식회사 반도체 패키지 및 그 제조 방법
US8462187B2 (en) * 2010-11-30 2013-06-11 Rohm Co., Ltd. Thermal print head
JP5828682B2 (ja) * 2011-06-06 2015-12-09 キヤノン株式会社 液体吐出ヘッドの製造方法
US8691341B2 (en) 2011-09-30 2014-04-08 Lexmark International, Inc. Method of controlling the height of encapsulant on an inkjet printhead
US9209019B2 (en) * 2013-09-05 2015-12-08 Diftek Lasers, Inc. Method and system for manufacturing a semi-conducting backplane
US8550599B2 (en) * 2011-12-20 2013-10-08 Canon Kabushiki Kaisha Liquid ejection head and process for producing the same
JP6021365B2 (ja) * 2012-03-12 2016-11-09 キヤノン株式会社 インプリント装置、それを用いた物品の製造方法
JP5930832B2 (ja) * 2012-04-27 2016-06-08 キヤノン株式会社 光硬化物の製造方法
US20140239529A1 (en) * 2012-09-28 2014-08-28 Nanonex Corporation System and Methods For Nano-Scale Manufacturing
US8928134B2 (en) * 2012-12-28 2015-01-06 Taiwan Semiconductor Manufacturing Company, Ltd. Package on package bonding structure and method for forming the same
JP6173354B2 (ja) * 2013-01-24 2017-08-02 綜研化学株式会社 光透過型インプリント用モールド、大面積モールドの製造方法
US9859185B2 (en) * 2016-01-28 2018-01-02 Kyocera International, Inc. Semiconductor packaging structure and package having stress release structure
JP7247574B2 (ja) * 2018-12-19 2023-03-29 富士電機株式会社 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101341028A (zh) * 2005-10-24 2009-01-07 惠普开发有限公司 封装电连接部分
US20080158298A1 (en) * 2006-12-28 2008-07-03 Serbicki Jeffrey P Printhead wirebond encapsulation
WO2009039550A1 (en) * 2007-09-25 2009-04-02 Silverbrook Research Pty Ltd Method of wire bond encapsulation profiling

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