TWI560915B - Light emitting diode (led) devices, systems, and methods - Google Patents

Light emitting diode (led) devices, systems, and methods

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Publication number
TWI560915B
TWI560915B TW101102722A TW101102722A TWI560915B TW I560915 B TWI560915 B TW I560915B TW 101102722 A TW101102722 A TW 101102722A TW 101102722 A TW101102722 A TW 101102722A TW I560915 B TWI560915 B TW I560915B
Authority
TW
Taiwan
Prior art keywords
led
systems
methods
devices
light emitting
Prior art date
Application number
TW101102722A
Other languages
English (en)
Other versions
TW201236219A (en
Inventor
David T Emerson
Michael J Bergmann
Christopher P Hussell
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Publication of TW201236219A publication Critical patent/TW201236219A/zh
Application granted granted Critical
Publication of TWI560915B publication Critical patent/TWI560915B/zh

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133602Direct backlight
    • G02F1/133603Direct backlight with LEDs
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133602Direct backlight
    • G02F1/133608Direct backlight including particular frames or supporting means
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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)
  • Fastening Of Light Sources Or Lamp Holders (AREA)
  • Planar Illumination Modules (AREA)
TW101102722A 2011-01-21 2012-01-20 Light emitting diode (led) devices, systems, and methods TWI560915B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/011,609 US9111778B2 (en) 2009-06-05 2011-01-21 Light emitting diode (LED) devices, systems, and methods

Publications (2)

Publication Number Publication Date
TW201236219A TW201236219A (en) 2012-09-01
TWI560915B true TWI560915B (en) 2016-12-01

Family

ID=46516372

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101102722A TWI560915B (en) 2011-01-21 2012-01-20 Light emitting diode (led) devices, systems, and methods

Country Status (4)

Country Link
US (1) US9111778B2 (zh)
CN (1) CN103443530A (zh)
TW (1) TWI560915B (zh)
WO (1) WO2012100060A2 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9859471B2 (en) 2011-01-31 2018-01-02 Cree, Inc. High brightness light emitting diode (LED) packages, systems and methods with improved resin filling and high adhesion
US11101408B2 (en) 2011-02-07 2021-08-24 Creeled, Inc. Components and methods for light emitting diode (LED) lighting

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7923739B2 (en) 2009-06-05 2011-04-12 Cree, Inc. Solid state lighting device
US8598602B2 (en) 2009-01-12 2013-12-03 Cree, Inc. Light emitting device packages with improved heat transfer
US9111778B2 (en) 2009-06-05 2015-08-18 Cree, Inc. Light emitting diode (LED) devices, systems, and methods
US8686445B1 (en) 2009-06-05 2014-04-01 Cree, Inc. Solid state lighting devices and methods
US8860043B2 (en) 2009-06-05 2014-10-14 Cree, Inc. Light emitting device packages, systems and methods
US8269244B2 (en) 2010-06-28 2012-09-18 Cree, Inc. LED package with efficient, isolated thermal path
US8648359B2 (en) 2010-06-28 2014-02-11 Cree, Inc. Light emitting devices and methods
USD643819S1 (en) 2010-07-16 2011-08-23 Cree, Inc. Package for light emitting diode (LED) lighting
USD679842S1 (en) 2011-01-03 2013-04-09 Cree, Inc. High brightness LED package
US8610140B2 (en) 2010-12-15 2013-12-17 Cree, Inc. Light emitting diode (LED) packages, systems, devices and related methods
KR101289566B1 (ko) * 2011-08-08 2013-07-24 성균관대학교산학협력단 반도체 장치용 기판, 이를 구비하는 반도체 장치 및 반도체 장치의 제조방법
JP6064396B2 (ja) * 2012-07-09 2017-01-25 日亜化学工業株式会社 発光装置
CN104033749A (zh) * 2013-03-08 2014-09-10 赵依军 散热能力强的发光二极管球泡灯
TWI598665B (zh) * 2013-03-15 2017-09-11 隆達電子股份有限公司 發光元件、長條狀發光元件及其應用
TW201543720A (zh) * 2014-05-06 2015-11-16 Genesis Photonics Inc 封裝結構及其製備方法
JP6318844B2 (ja) * 2014-05-20 2018-05-09 日亜化学工業株式会社 発光装置
CN104993033B (zh) * 2015-07-21 2019-01-08 福建天电光电有限公司 分布式iii族氮化物发光半导体的emc金属接合装置及封装方法
CN106384732A (zh) * 2015-07-28 2017-02-08 力勤股份有限公司 具有静电放电防护的集成电路
EP3341787A1 (en) * 2015-08-25 2018-07-04 ABL IP Holding LLC Enhancements for use of a display in a software configurable lighting device
JP6842246B2 (ja) * 2016-05-26 2021-03-17 ローム株式会社 Ledモジュール
CN107706286B (zh) * 2017-09-27 2019-10-11 开发晶照明(厦门)有限公司 Led发光装置和led支架
US10141475B1 (en) * 2017-12-24 2018-11-27 Mikro Mesa Technology Co., Ltd. Method for binding micro device to conductive pad
US10959336B2 (en) * 2019-03-28 2021-03-23 Mikro Mesa Technology Co., Ltd. Method of liquid assisted binding
US10986737B2 (en) * 2019-03-28 2021-04-20 Mikro Mesa Technology Co., Ltd. Method of restricting micro device on conductive pad
USD1010179S1 (en) 2020-01-09 2024-01-02 Electronic Controls Company Flexible directional vehicle warning light
EP4088059A4 (en) * 2020-01-09 2024-02-07 Electronic Controls Company FLEXIBLE DIRECTIONAL VEHICLE WARNING LIGHT
DE102022205568A1 (de) * 2022-06-01 2023-12-07 Continental Automotive Technologies GmbH Anzeigevorrichtung und Fortbewegungsmittel
WO2023242185A1 (en) * 2022-06-14 2023-12-21 Ams-Osram International Gmbh Method for producing a semiconductor device and semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090122533A1 (en) * 2007-11-08 2009-05-14 Innovations In Optics, Inc. LED backlighting system with closed loop control
US20100270577A1 (en) * 2007-07-23 2010-10-28 Dsm Ip Assets B.V. Plastic component for a lighting systems

Family Cites Families (115)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4866005A (en) 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
US4946547A (en) 1989-10-13 1990-08-07 Cree Research, Inc. Method of preparing silicon carbide surfaces for crystal growth
US5210051A (en) 1990-03-27 1993-05-11 Cree Research, Inc. High efficiency light emitting diodes from bipolar gallium nitride
US5200022A (en) 1990-10-03 1993-04-06 Cree Research, Inc. Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product
US5393993A (en) 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
JP3154368B2 (ja) 1994-02-25 2001-04-09 新東工業株式会社 ガス硬化式鋳型造型装置
AU2231795A (en) 1994-04-14 1995-11-10 Olin Corporation Electronic package having improved wire bonding capability
US5523589A (en) 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
KR100500919B1 (ko) 1997-02-10 2005-07-14 마츠시타 덴끼 산교 가부시키가이샤 수지봉입형 반도체장치 및 그 제조방법
US6335548B1 (en) 1999-03-15 2002-01-01 Gentex Corporation Semiconductor radiation emitter package
US6274924B1 (en) 1998-11-05 2001-08-14 Lumileds Lighting, U.S. Llc Surface mountable LED package
DE50004031D1 (de) 1999-12-24 2003-11-13 Gedib Ingbuero Innovation Verdichtungseinrichtung zur durchführung von verdichtungsvorgängen an formkörpern aus kornförmigen stoffen
JP4926337B2 (ja) 2000-06-28 2012-05-09 アバゴ・テクノロジーズ・ジェネラル・アイピー(シンガポール)プライベート・リミテッド 光源
JP4066608B2 (ja) 2001-03-16 2008-03-26 日亜化学工業株式会社 パッケージ成形体及びその製造方法
DE10117889A1 (de) 2001-04-10 2002-10-24 Osram Opto Semiconductors Gmbh Leiterrahmen und Gehäuse für ein strahlungsemittierendes Bauelement, strahlungsemittierendes Bauelement sowie Verfahren zu dessen Herstellung
US6949771B2 (en) 2001-04-25 2005-09-27 Agilent Technologies, Inc. Light source
US6498355B1 (en) 2001-10-09 2002-12-24 Lumileds Lighting, U.S., Llc High flux LED array
US6936855B1 (en) 2002-01-16 2005-08-30 Shane Harrah Bendable high flux LED array
US7775685B2 (en) 2003-05-27 2010-08-17 Cree, Inc. Power surface mount light emitting die package
US7244965B2 (en) 2002-09-04 2007-07-17 Cree Inc, Power surface mount light emitting die package
US7087458B2 (en) 2002-10-30 2006-08-08 Advanpack Solutions Pte. Ltd. Method for fabricating a flip chip package with pillar bump and no flow underfill
US7692206B2 (en) 2002-12-06 2010-04-06 Cree, Inc. Composite leadframe LED package and method of making the same
WO2004082034A1 (ja) 2003-03-14 2004-09-23 Sumitomo Electric Industries Ltd. 半導体装置
US7095053B2 (en) 2003-05-05 2006-08-22 Lamina Ceramics, Inc. Light emitting diodes packaged for high temperature operation
US6921927B2 (en) 2003-08-28 2005-07-26 Agilent Technologies, Inc. System and method for enhanced LED thermal conductivity
JP4654577B2 (ja) 2003-12-22 2011-03-23 パナソニック電工株式会社 光電変換素子実装用セラミックス基板
JP4325412B2 (ja) 2004-01-21 2009-09-02 日亜化学工業株式会社 発光装置及び発光装置の製造方法
US7791061B2 (en) 2004-05-18 2010-09-07 Cree, Inc. External extraction light emitting diode based upon crystallographic faceted surfaces
US7456499B2 (en) 2004-06-04 2008-11-25 Cree, Inc. Power light emitting die package with reflecting lens and the method of making the same
KR100587020B1 (ko) 2004-09-01 2006-06-08 삼성전기주식회사 고출력 발광 다이오드용 패키지
JP5192811B2 (ja) 2004-09-10 2013-05-08 ソウル セミコンダクター カンパニー リミテッド 多重モールド樹脂を有する発光ダイオードパッケージ
WO2006065007A1 (en) 2004-12-16 2006-06-22 Seoul Semiconductor Co., Ltd. Leadframe having a heat sink supporting ring, fabricating method of a light emitting diodepackage using the same and light emitting diodepackage fabbricated by the method
US7777247B2 (en) 2005-01-14 2010-08-17 Cree, Inc. Semiconductor light emitting device mounting substrates including a conductive lead extending therein
JP5059739B2 (ja) 2005-03-11 2012-10-31 ソウル セミコンダクター カンパニー リミテッド 直列接続された発光セルのアレイを有する発光ダイオードパッケージ
KR101241973B1 (ko) 2005-03-11 2013-03-08 서울반도체 주식회사 발광 장치 및 이의 제조 방법
KR100591687B1 (ko) 2005-05-06 2006-06-22 럭스피아 주식회사 칼라게멋을 향상한 멀티-칩 발광다이오드 패키지 및 이를채용한 백라이트 유닛
KR101186644B1 (ko) 2005-06-27 2012-09-28 서울반도체 주식회사 직렬접속된 발광셀 어레이를 갖는 발광다이오드 칩을탑재한 발광다이오드 패키지
JP2008545269A (ja) 2005-07-01 2008-12-11 ラミナ ライティング インコーポレーテッド 白色発光ダイオード及びダイオードアレイを有する照明装置、それらの製造方法及び製造装置
US7550319B2 (en) 2005-09-01 2009-06-23 E. I. Du Pont De Nemours And Company Low temperature co-fired ceramic (LTCC) tape compositions, light emitting diode (LED) modules, lighting devices and method of forming thereof
JP2007073836A (ja) 2005-09-08 2007-03-22 Sharp Corp 光結合素子、光結合素子の製造方法及び光結合素子を搭載した電子機器
JP4700469B2 (ja) 2005-10-17 2011-06-15 株式会社 日立ディスプレイズ 液晶表示装置
KR101241650B1 (ko) 2005-10-19 2013-03-08 엘지이노텍 주식회사 엘이디 패키지
US7943946B2 (en) 2005-11-21 2011-05-17 Sharp Kabushiki Kaisha Light emitting device
KR100780176B1 (ko) 2005-11-25 2007-11-27 삼성전기주식회사 측면 방출 발광다이오드 패키지
US7655957B2 (en) 2006-04-27 2010-02-02 Cree, Inc. Submounts for semiconductor light emitting device packages and semiconductor light emitting device packages including the same
JP4830768B2 (ja) 2006-05-10 2011-12-07 日亜化学工業株式会社 半導体発光装置及び半導体発光装置の製造方法
JP5057707B2 (ja) 2006-06-16 2012-10-24 日亜化学工業株式会社 発光装置
KR100904152B1 (ko) 2006-06-30 2009-06-25 서울반도체 주식회사 히트싱크 지지부를 갖는 리드프레임, 그것을 사용한 발광다이오드 패키지 제조방법 및 그것에 의해 제조된 발광다이오드 패키지
TW200807745A (en) 2006-07-28 2008-02-01 Delta Electronics Inc Light-emitting heat-dissipating device and packaging method thereof
CN101501873A (zh) 2006-08-11 2009-08-05 E.I.内穆尔杜邦公司 Led器件和液晶显示器背板
KR100772433B1 (ko) 2006-08-23 2007-11-01 서울반도체 주식회사 반사면을 구비하는 리드단자를 채택한 발광 다이오드패키지
JP2008071954A (ja) 2006-09-14 2008-03-27 Mimaki Denshi Buhin Kk 光源装置
JP5710088B2 (ja) 2006-10-04 2015-04-30 日亜化学工業株式会社 半導体装置
US7852015B1 (en) 2006-10-11 2010-12-14 SemiLEDs Optoelectronics Co., Ltd. Solid state lighting system and maintenance method therein
JP2008103480A (ja) 2006-10-18 2008-05-01 Toyoda Gosei Co Ltd 発光装置
JP5023781B2 (ja) 2006-11-13 2012-09-12 日亜化学工業株式会社 発光装置
TW200845423A (en) 2006-12-04 2008-11-16 Alps Electric Co Ltd Light emitting device and projector
KR100845856B1 (ko) 2006-12-21 2008-07-14 엘지전자 주식회사 발광 소자 패키지 및 그 제조방법
JP2008172125A (ja) 2007-01-15 2008-07-24 Citizen Electronics Co Ltd チップ型led発光装置及びその製造方法
KR100901618B1 (ko) 2007-04-19 2009-06-08 엘지이노텍 주식회사 발광 다이오드 패키지 및 제조방법
US20080258130A1 (en) 2007-04-23 2008-10-23 Bergmann Michael J Beveled LED Chip with Transparent Substrate
US7878683B2 (en) 2007-05-07 2011-02-01 Koninklijke Philips Electronics N.V. LED-based lighting fixtures for surface illumination with improved heat dissipation and manufacturability
CN201054361Y (zh) 2007-05-11 2008-04-30 凯鼎科技股份有限公司 发光二极管
JP4341693B2 (ja) 2007-05-16 2009-10-07 ウシオ電機株式会社 Led素子およびその製造方法
US7566159B2 (en) 2007-05-31 2009-07-28 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Side-emitting LED package with improved heat dissipation
KR20090003378A (ko) 2007-06-05 2009-01-12 주식회사 루멘스 발광 다이오드 패키지
US20090008662A1 (en) 2007-07-05 2009-01-08 Ian Ashdown Lighting device package
JP5453713B2 (ja) 2007-07-06 2014-03-26 日亜化学工業株式会社 半導体装置およびその形成方法
US8354992B2 (en) * 2007-07-13 2013-01-15 Tte Indianapolis Appearance improvement for zone backlit LCD displays
JP2009054892A (ja) 2007-08-28 2009-03-12 Panasonic Electric Works Co Ltd Ledチップの実装方法
TWM331086U (en) 2007-10-17 2008-04-21 Tai Sol Electronics Co Ltd Combination of LED and heat conduction device
TW200921942A (en) 2007-11-14 2009-05-16 Advanced Optoelectronic Tech Packaging structure of light emitting diode device and method of fabricating the same
TW200928203A (en) 2007-12-24 2009-07-01 Guei-Fang Chen LED illuminating device capable of quickly dissipating heat and its manufacturing method
USD597968S1 (en) 2008-03-13 2009-08-11 Rohm Co., Ltd. Light emitting diode module
KR100967451B1 (ko) 2008-05-16 2010-07-01 주식회사 이츠웰 고휘도 칩형 발광다이오드 패키지를 이용한 백라이트유니트
JP2010034262A (ja) 2008-07-29 2010-02-12 Sumitomo Metal Electronics Devices Inc 発光素子収納用パッケージ
US20100059783A1 (en) 2008-09-08 2010-03-11 Harry Chandra Light Emitting Chip Package With Metal Leads For Enhanced Heat Dissipation
TW201013969A (en) 2008-09-16 2010-04-01 Upec Electronics Corp Package structure of light-emitting diode
KR101533817B1 (ko) 2008-12-31 2015-07-09 서울바이오시스 주식회사 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
USD648686S1 (en) 2010-04-30 2011-11-15 Cree, Inc. Light emitting diode (LED) package
US7923739B2 (en) 2009-06-05 2011-04-12 Cree, Inc. Solid state lighting device
US8598602B2 (en) 2009-01-12 2013-12-03 Cree, Inc. Light emitting device packages with improved heat transfer
USD641719S1 (en) 2009-06-05 2011-07-19 Cree, Inc. Light emitting diode
US8368112B2 (en) 2009-01-14 2013-02-05 Cree Huizhou Opto Limited Aligned multiple emitter package
US20100181582A1 (en) 2009-01-22 2010-07-22 Intematix Corporation Light emitting devices with phosphor wavelength conversion and methods of manufacture thereof
JP4640514B2 (ja) 2009-02-27 2011-03-02 東芝ライテック株式会社 発光モジュール
CN101510581B (zh) 2009-03-19 2011-06-29 旭丽电子(广州)有限公司 发光二极管及其相关背光模块
EP2436236A4 (en) 2009-05-28 2012-11-21 Lynk Labs Inc LED LIGHTING DEVICES, MULTI-TENSION AND MULTI-BRIGHTNESS, AND METHODS FOR THEIR USE
US8860043B2 (en) 2009-06-05 2014-10-14 Cree, Inc. Light emitting device packages, systems and methods
US8686445B1 (en) 2009-06-05 2014-04-01 Cree, Inc. Solid state lighting devices and methods
USD648687S1 (en) 2009-06-05 2011-11-15 Cree, Inc. Light emitting device package
US9111778B2 (en) 2009-06-05 2015-08-18 Cree, Inc. Light emitting diode (LED) devices, systems, and methods
US8476812B2 (en) 2009-07-07 2013-07-02 Cree, Inc. Solid state lighting device with improved heatsink
USD634716S1 (en) 2009-08-06 2011-03-22 Toshiba Lighting & Technology Corporation Light emitting diode illumination device
CN101639181A (zh) * 2009-08-07 2010-02-03 广东昭信光电科技有限公司 直下式背光系统
TWM376909U (en) 2009-09-28 2010-03-21 Fu Sheng Ind Co Ltd Frame structure for light emitting diodes
KR101114150B1 (ko) 2009-10-19 2012-03-09 엘지이노텍 주식회사 발광 소자
TWD139299S1 (zh) 2009-11-11 2011-03-01 億光電子工業股份有限公司 發光二極體
USD627310S1 (en) 2009-11-27 2010-11-16 Lite-On Technology Corp. Package of a light emitting diode
USD622680S1 (en) 2009-12-04 2010-08-31 Silitek Electronic (Guangzhou) Go., Ltd. Package of a light emitting diode
USD626095S1 (en) 2009-12-11 2010-10-26 Everlight Electronics Co., Ltd. Light emitting diode
TWD139998S1 (zh) 2010-02-10 2011-04-11 隆達電子股份有限公司 晶片之導線架
TWD140001S1 (zh) 2010-02-10 2011-04-11 隆達電子股份有限公司 晶片之導線架
TWD140000S1 (zh) 2010-02-10 2011-04-11 隆達電子股份有限公司 晶片之導線架
TWM383822U (en) 2010-02-12 2010-07-01 Bi Chi Corp Light emitting diode base structure of free-bending swan neck
TWD138079S1 (zh) 2010-02-12 2010-12-01 隆達電子股份有限公司 發光二極體封裝載具
USD658599S1 (en) 2010-03-26 2012-05-01 Toshiba Lighting & Technology Corporation Light emitting diode module
USD628541S1 (en) 2010-06-14 2010-12-07 Everlight Electronics Co., Ltd. Light emitting diode
US8269244B2 (en) 2010-06-28 2012-09-18 Cree, Inc. LED package with efficient, isolated thermal path
US8648359B2 (en) 2010-06-28 2014-02-11 Cree, Inc. Light emitting devices and methods
USD643819S1 (en) 2010-07-16 2011-08-23 Cree, Inc. Package for light emitting diode (LED) lighting
US8610140B2 (en) 2010-12-15 2013-12-17 Cree, Inc. Light emitting diode (LED) packages, systems, devices and related methods
USD679842S1 (en) 2011-01-03 2013-04-09 Cree, Inc. High brightness LED package
CN103348496A (zh) 2011-02-07 2013-10-09 克利公司 用于发光二极管(led)发光的部件和方法
CN103534821B (zh) 2011-05-03 2017-03-29 克利公司 发光二极管(led)的封装、系统、装置及相关方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100270577A1 (en) * 2007-07-23 2010-10-28 Dsm Ip Assets B.V. Plastic component for a lighting systems
US20090122533A1 (en) * 2007-11-08 2009-05-14 Innovations In Optics, Inc. LED backlighting system with closed loop control

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9859471B2 (en) 2011-01-31 2018-01-02 Cree, Inc. High brightness light emitting diode (LED) packages, systems and methods with improved resin filling and high adhesion
US11101408B2 (en) 2011-02-07 2021-08-24 Creeled, Inc. Components and methods for light emitting diode (LED) lighting

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