TWI555872B - 塡充間隙用的二氧化矽前驅物 - Google Patents

塡充間隙用的二氧化矽前驅物 Download PDF

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TWI555872B
TWI555872B TW103120333A TW103120333A TWI555872B TW I555872 B TWI555872 B TW I555872B TW 103120333 A TW103120333 A TW 103120333A TW 103120333 A TW103120333 A TW 103120333A TW I555872 B TWI555872 B TW I555872B
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威廉杭克斯
比洛德歐史帝芬Ｍ
蘇中因
漢迪克斯布萊恩Ｃ
羅伊德傑佛里
李衛民
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恩特葛瑞斯股份有限公司
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Description

填充間隙用的二氧化矽前驅物
本發明是關於微電子裝置的溝渠結構和其製造方法，及關於用來填滿高深寬比溝渠結構的二氧化矽前驅物，其中二氧化矽前驅物流動填充溝渠，並於低溫快速固化成實質無孔隙且密度實質均勻遍佈整個體積的二氧化矽。
隨著積體電路尺寸不斷縮小，高深寬比之窄溝渠需求應運而生。目前沉積二氧化矽至溝渠的製程採用化學氣相沉積。然當技術節點下探至65奈米(nm)以下時，越來越難沉積二氧化矽至窄溝渠，又不會在沉積材料中形成孔隙。
面對此困難，因高溫水解與縮合反應易使二氧化矽材料產物具有孔隙和裂痕，故期採行控制溼度環境或利用氧化劑共反應物的低溫流動填充(flow fill)法固化。孔隙、裂痕和其他缺陷將造成異質介電材料而惡化裝置性能。熱固化期間，縮聚之基質材 料的收縮宜小，以免產生裂縫。
傳統二氧化矽前驅物固化時會引起擴散限制氧化，因此均勻密實窄溝渠內的材料亦會引發問題。
一般乃利用高溫(600-1200℃)熱退火步驟形成二氧化矽(SiO2)。由於高溫與積體電路或記憶裝置的其他結構、材料和製程不相容，導致裝置性能因高溫退火而降低，故以低溫製程為佳。另外，高溫退火會提高製程的整體熱預算(thermal budget)。
此技藝用來形成氧化層於半導體且具上述問題的傳統前驅物包括以過氧化氫固化的矽烷或甲基矽烷、以臭氧或好氧電漿固化的聚矽氮烷、以水固化的四乙基正矽酸鹽、和以砒啶與水固化的六氯二矽烷(HCDS)。
儘管某些如三乙氧基矽烷之矽氧烷已做為二氧化矽前驅物，然此類前驅物在潮濕空氣中水解緩慢且pH呈中性時二氧化矽縮合的速率很慢。具可水解或不穩定官能基的前驅物會引起交聯作用，而產生密實的SiO2基質，其密度較高、機械強度較大、且化學機械研磨(CMP)性質與氫氟酸(HF)抗蝕性較佳。雖然水蒸氣退火能有效密實部分氧化膜，其中電晶體已於沉積隔絕材料前形成其上，但水退火會引起電晶體周圍氧化，以致性能大幅降低。
填充記憶裝置溝渠的一可用組成為以臭氧熱固化的四乙基正矽酸鹽(TEOS)，其可得到相當共形的 膜層。然TEOS/臭氧製程本質上仍有不足，即當生成組成填滿溝渠時，溝渠側壁上的生成物必然會互相接合而留下裂縫(seam)。裂縫通常是接觸後續裝置處理之清潔試劑時，較快被移除的脆弱區域。
使用低溫下可流動填充及快速水解的前驅物在形成表層前迅速縮聚成密實的SiO2於溝渠內，著實為此技藝的一大進展挑戰。
填充溝渠的另一課題與水蒸氣退火有關。
本發明是關於微電子裝置溝渠結構和其製造方法、及適用於形成二氧化矽而填滿高深寬比溝渠結構的二氧化矽前驅物，其中前驅物流動填充於溝渠中，並於低溫快速固化成實質無孔隙且密度實質均勻遍佈整個體積的二氧化矽。
在一態樣中，本發明是關於一種完全填充之溝渠結構，包含一內含高深寬比溝渠的微電子裝置基材和填滿溝渠的二氧化矽團塊，二氧化矽具有實質無孔隙之特性和實質均勻遍佈整個團塊的密度。
在另一態樣中，本發明是關於一種製造半導體產品的方法，包括提供一具溝渠於其中的微電子裝置基材；使用二氧化矽前驅物組成完全填充溝渠；以及處理二氧化矽前驅物組成而形成填滿溝渠的二氧化矽團塊，其中二氧化矽前驅物組成包含前驅物 矽化合物，選自以下構成之群組：(i)化學式為(R1R2N)4-xSiRx的胺基矽烷(aminosilanes)，其中x為整數0-3，R、R1、R2分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(ii)化學式為(RO)4-xSiR1 x的烷氧基矽烷(alkoxysilanes)，其中x為整數0-3，R、R1分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(iii)化學式為(RO)3-xR1 xSi-Si(OR)3-xR1 x的烷氧基二矽烷(alkoxydisilanes)，其中x為整數0-2，R、R1分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(iv)化學式為(R1R2N)3-xRxSi-Si(NR1R2)3-xRx的胺基二矽烷(aminodisilanes)，其中x為整數0-2，R、R1、R2分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(v)化學式為(R1R2N)3-xRxSi-O-Si(NR1R2)3-xRx的胺基二矽氧烷(aminodisiloxanes)，其中x為整數0-2，R、R1、R2分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(vi)化學式為(RO)3-xR1 xSi-O-Si(OR)3-xR1 x的烷氧基二矽氧烷(alkoxydisiloxanes)，其中x為整數0-2，R、R1分別選自氫基、支鏈與直鏈之C1-C6烷 基、C3-C8環烷基和C6-C13芳香基；(vii)化學式為(R1R2N)3-xRxSi-NH-Si(NR1R2)3-xRx的胺基二矽氮烷(aminodisilazanes)，其中x為整數0-2，R、R1、R2分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(viii)化學式為(RO)3-xR1 xSi-NH-Si(OR)3-xR1 x的烷氧基二矽氮烷(alkoxydisilazanes)，其中x為整數0-2，R、R1分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(ix)氯基胺基矽烷(chloroaminosilanes)，其化學式為Cl4-xSi(NR1R2)x，其中x為整數0-3、(R1R2N)3-xClxSi-Si(NR1R2)3-xClx，其中x為整數1或2、(R1R2N)3-xClxSi-O-Si(NR1R2)3-xClx，其中x為整數1或2、和(R1R2N)3-xClxSi-NH-Si(NR1R2)3-xClx，其中x為整數1或2，且R1、R2分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(x)環矽氧烷(cyclosiloxanes)和環矽氮烷(cyclosilazanes)，其化學式為：
其中n為整數0-4，R1、R2分別選自氫基、支鏈 與直鏈之C1-C6烷基、C3-C8環烷基、C6-C13芳香基、C1-C6二烷胺基和C1-C6烷氧基；(xi)線性聚矽氧烷和聚矽氮烷；(xii)矽化合物，其化學通式為R4-xSiLx，其中x為整數1-3、和L3-xRxSi-SiL3-xRx，其中x為整數0-2，而L選自異氰酸基(NCO)、甲基乙基酮肟(R1R2C=N-O-)、三氟乙酸基(CF3OCO)、三氟甲磺酸基(CF3SO3)、醯氧基(ROCO)、β-二酮(R1COCHCOR2)、β-二酮亞胺(R1CNR2CHCOR3)、β-二亞胺(R1CNR2CHCNR2R3)、脒(RC(NR1)2)、胍{(R1R2N)C(NR3)2}、烷胺基(NR1R2)、氫化物、烷氧基(RO)和甲酸基(HCOO)，R、R1、R2、R3分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(xiii)環氧乙烷基矽烷(oxiranylsilanes)，其化學式為：
其中x為整數0-3，n為整數0-3，R1、R2、R3分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基、C6-C13芳香基、C1-C6烷胺基和C1-C6烷氧基；(xiv)含乙酸乙酯基之矽前驅物，其化學式為(ROCOCH2CH2)xSi(OR1)4-x，其中x為整數1-4，R、 R1分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(xv)(tBuHN)2(H2N)Si-Si(NH2)(NHtBu)2，其中tBu為第三丁基；以及(xvi)上述化合物(i)-(xv)之預聚物的部分水解產物。
在又一態樣中，本發明是關於一種沉積二氧化矽至基材上的方法，包含使基材接觸前驅物矽化合物蒸氣，該前驅物矽化合物選自以下構成之群組：(i)化學式為(R1R2N)4-xSiRx的胺基矽烷，其中x為整數0-3，R、R1、R2分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(ii)化學式為(RO)4-xSiR1 x的烷氧基矽烷，其中x為整數0-3，R、R1分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(iii)化學式為(RO)3-xR1 xSi-Si(OR)3-xR1 x的烷氧基二矽烷，其中x為整數0-2，R、R1分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(iv)化學式為(R1R2N)3-xRxSi-Si(NR1R2)3-xRx的胺基二矽烷，其中x為整數0-2，R、R1、R2分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(v)化學式為(R1R2N)3-xRxSi-O-Si(NR1R2)3-xRx的 胺基二矽氧烷，其中x為整數0-2，R、R1、R2分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(vi)化學式為(RO)3-xR1 xSi-O-Si(OR)3-xR1 x的烷氧基二矽氧烷，其中x為整數0-2，R、R1分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(vii)化學式為(R1R2N)3-xRxSi-NH-Si(NR1R2)3-xRx的胺基二矽氮烷，其中x為整數0-2，R、R1、R2分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(viii)化學式為(RO)3-xR1 xSi-NH-Si(OR)3-xR1 x的烷氧基二矽氮烷，其中x為整數0-2，R、R1分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(ix)氯基胺基矽烷，其化學式為Cl4-xSi(NR1R2)x，其中x為整數0-3、(R1R2N)3-xClxSi-Si(NR1R2)3-xClx，其中x為整數1或2、(R1R2N)3-xClxSi-O-Si(NR1R2)3-xClx，其中x為整數1或2、和(R1R2N)3-xClxSi-NH-Si(NR1R2)3-xClx，其中x為整數1或2，且R1、R2分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基； (x)環矽氧烷和環矽氮烷，其化學式為：
其中n為整數0-4，R1、R2分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基、C6-C13芳香基、C1-C6二烷胺基和C1-C6烷氧基；(xi)線性聚矽氧烷和聚矽氮烷；(xii)矽化合物，其化學通式為R4-xSiLx，其中x為整數1-3、和L3-xRxSi-SiL3-xRx，其中x為整數0-2，而L選自異氰酸基(NCO)、甲基乙基酮肟(R1R2C=N-O-)、三氟乙酸基(CF3OCO)、三氟甲磺酸基(CF3SO3)、醯氧基(ROCO)、β-二酮(R1COCHCOR2)、β-二酮亞胺(R1CNR2CHCOR3)、β-二亞胺(R1CNR2CHCNR2R3)、脒(RC(NR1)2)、胍{(R1R2N)C(NR3)2}、烷胺基(NR1R2)、氫化物、烷氧基(RO)和甲酸基(HCOO)，R、R1、R2、R3分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(xiii)環氧乙烷基矽烷，其化學式為：
其中x為整數0-3，n為整數0-3，R1、R2、R3 分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基、C6-C13芳香基、C1-C6烷胺基和C1-C6烷氧基；(xiv)含乙酸乙酯基之矽前驅物，其化學式為(ROCOCH2CH2)xSi(OR1)4-x，其中x為整數1-4，R、R1分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(xv)(tBuHN)2(H2N)Si-Si(NH2)(NHtBu)2，其中tBu為第三丁基；以及(xvi)上述化合物(i)-(xv)之預聚物的部分水解產物。
本發明之另一態樣是關於一種形成氧化物材料以填充基材之溝渠結構的方法，方法包含沉積氧化物前驅材料至基材上而填充溝渠結構，其中氧化物前驅材料包含鍺和矽。
本發明之又一態樣是關於一種微電子裝置結構，包含具溝渠結構形成其內之基材，其中溝渠結構填入鍺/矽(Ge/Si)氧化物組成。
在另一態樣中，本發明是關於一種形成氧化物填充材料於溝渠之方法，包含使用一包括抑制劑之前驅物組成來沉積氧化物填充材料，以抑制裂縫形成。
本發明之又一態樣是關於一種使用可氧化成二氧化矽的矽材料，來抑制裂縫不當影響填充基材之溝渠結構的方法，該方法包含混入鍺前驅物到矽材 料中。
本發明之再一態樣是關於一種微電子裝置結構，包括至少部分填入氧化鍺/二氧化矽(GeO2/SiO2)混合物的溝渠。
本發明之另一態樣是關於一種施行四乙基正矽酸鹽/臭氧(TEOS/O3)製程來填充基材中之溝渠結構的方法，包含加入羥基官能基化合物到TEOS中。
本發明之又一態樣是關於一種填充基材中之溝渠的方法，包含進行TEOS/臭氧製程並加入醛類之TEOS，以形成氧化矽材料於溝渠內。
本發明之再一態樣是關於一種填充基材之溝渠的方法，包含進行TEOS/臭氧製程來形成氧化矽材料於溝渠內，其中TEOS沉積於基材中的組成包含乙二醇(ethylene glycol)和異丙醇(isopropyl alcohol)。
本發明之其他態樣、特徵和實施例在參閱說明書和所附申請專利範圍後，將變得更清楚易懂。
10‧‧‧溝渠結構
12‧‧‧基材
14、16‧‧‧表面
18‧‧‧溝渠
20‧‧‧壁面
22‧‧‧底面
24‧‧‧二氧化矽
50‧‧‧裝置結構
52‧‧‧基材
54‧‧‧側壁
55‧‧‧底面
56‧‧‧材料
58‧‧‧溝渠
60‧‧‧氧化物
第1圖為高深寬比溝渠結構的示意圖，其中溝渠含有由本發明之前驅物形成的二氧化矽，其在低溫條件下固化成實質無孔隙且密度實質均勻遍佈整個體積的二氧化矽。
第2及3圖為微電子裝置結構的示意圖，其中沉積溝渠填充材料包括加入抑制劑於沉積之填充材 料中，第3圖繪示抑制劑對溝渠內之氧化物材料生長的影響。
本發明是關於各種溝渠結構、前驅物和用來形成溝渠結構的製程。
在此，“低溫”是指低於400℃。
本發明之前驅材料相關的“流動填充”是指引進高深寬比溝渠的材料在溝渠內為自行推平(self-leveling)，而形成接觸溝渠壁面和底面的材料塊體。
微電子裝置基材之溝渠相關的“高深寬比”是指溝渠的深度：寬度比至少為3：1。在一較佳實施例中，溝渠的深度：寬度比為3：1至10：1。在另一較佳實施例中，溝渠的深度：寬度比至少為5：1。
在此及後附申請專利範圍提及之單數格式“一”、“和”、“該”等包括複數意涵，除非內文另特別指明。
在此提出之碳數範圍，例如C1-C6烷基或C1-C12烷基，包括此範圍內的各碳數部分，是以涵蓋此範圍內介於中間值的每一碳數和任何碳數範圍；更應理解此特定碳數範圍內的子範圍可個別包含較小的碳數範圍，此亦落在本發明之保護範圍內，且本發明尚包括特別排除某一或多個碳數的碳數範圍，故 排除特定碳數範圍之上限及/或下限的子範圍亦不脫離本發明。因此，C1-C12烷基意為包括甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基、壬基、癸基、十一烷基和十二烷基，包括其直鏈與支鏈形式。當可理解廣泛應用於取代基部分的碳數範圍，如C1-C12，在本發明之特定實施例中可進一步限制成落在特定之較寬取代基部分範圍內的子範圍。舉例來說，如C1-C12烷基之碳數範圍在本發明之特定實施例將進一步限制成涵蓋如C1-C4烷基、C2-C8烷基、C2-C4烷基、C3-C5烷基、或其他適合子界的子範圍。應理解特定範圍內的任何碳數皆可當作特殊取代基碳原子數的下限或上限，故在此等同視為已提出各種子界排列。
同樣地，雖然本發明以特定排列之特定特徵結構、態樣、例子和實施例說明主題，但應理解這些特徵結構、態樣、例子及/或實施例在不脫離本發明之精神和範圍內，彼此當可選擇性聚集、交換、組合和再次組合。
根據本發明之適用於填滿高深寬比溝渠結構的二氧化矽前驅物可流動填入高深寬比溝渠結構內，並於低溫快速固化成實質無孔隙與裂痕且密度實質均勻遍佈整個體積的二氧化矽。
廣泛應用於本發明之前驅物一般包括下列前驅物矽化合物，但不以此為限： (i)化學式為(R1R2N)4-xSiRx的胺基矽烷，其中x為整數0-3，R、R1、R2分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(ii)化學式為(RO)4-xSiR1 x的烷氧基矽烷，其中x為整數0-3，R、R1分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(iii)化學式為(RO)3-xR1 xSi-Si(OR)3-xR1 x的烷氧基二矽烷，其中x為整數0-2，R、R1分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(iv)化學式為(R1R2N)3-xRxSi-Si(NR1R2)3-xRx的胺基二矽烷，其中x為整數0-2，R、R1、R2分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(v)化學式為(R1R2N)3-xRxSi-O-Si(NR1R2)3-xRx的胺基二矽氧烷，其中x為整數0-2，R、R1、R2分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(vi)化學式為(RO)3-xR1 xSi-O-Si(OR)3-xR1 x的烷氧基二矽氧烷，其中x為整數0-2，R、R1分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(vii)化學式為(R1R2N)3-xRxSi-NH-Si(NR1R2)3-xRx的胺基二矽氮 烷，其中x為整數0-2，R、R1、R2分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(viii)化學式為(RO)3-xR1 xSi-NH-Si(OR)3-xR1 x的烷氧基二矽氮烷，其中x為整數0-2，R、R1分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(ix)氯基胺基矽烷，其化學式為Cl4-xSi(NR1R2)x，其中x為整數0-3、(R1R2N)3-xClxSi-Si(NR1R2)3-xClx，其中x為整數1或2、(R1R2N)3-xClxSi-O-Si(NR1R2)3-xClx，其中x為整數1或2、和(R1R2N)3-xClxSi-NH-Si(NR1R2)3-xClx，其中x為整數1或2，而R1、R2分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(x)環矽氧烷和環矽氮烷，其化學式為：
其中n為整數0-4，R1、R2分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基、C6-C13芳香基、C1-C6二烷胺基和C1-C6烷氧基；(xi)線性聚矽氧烷和聚矽氮烷；(xii)矽化合物，其化學通式為R4-xSiLx，其中x 為整數1-3、和L3-xRxSi-SiL3-xRx，其中x為整數0-2，而L選自異氰酸基(NCO)、甲基乙基酮肟(R1R2C=N-O-)、三氟乙酸基(CF3OCO)、三氟甲磺酸基(CF3SO3)、醯氧基(ROCO)、β-二酮(R1COCHCOR2)、β-二酮亞胺(R1CNR2CHCOR3)、β-二亞胺(R1CNR2CHCNR2R3)、脒(RC(NR1)2)、胍{(R1R2N)C(NR3)2}、烷胺基(NR1R2)、氫化物、烷氧基(RO)和甲酸基(HCOO)，R、R1、R2、R3分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(xiii)環氧乙烷基矽烷，其化學式為：
其中x為整數0-3，n為整數0-3，R1、R2、R3分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基、C6-C13芳香基、C1-C6烷胺基和C1-C6烷氧基；(xiv)含乙酸乙酯基之矽前驅物，其化學式為(ROCOCH2CH2)xSi(OR1)4-x，其中x為整數1-4，R、R1分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(xv)(tBuHN)2(H2N)Si-Si(NH2)(NHtBu)2，其中tBu為第三丁基；以及(xvi)上述化合物(i)-(xv)之預聚物的部分水解產 物。
熟諳此技藝者能輕易合成上述前驅物化合物做為本發明之前驅物組成和應用。
在本發明之一特定態樣中，前驅物組成包括胺基矽烷，其接觸水氣、水和質子溶劑後會快速水解。氨、胺類和二矽烷用來催化縮合反應以固化前驅物組成。前驅物組成也可包括產生快速熱分解之矽自由基或配位基(如經由CO2之脫羧作用產生之甲酸基)的前驅物。
在本發明之另一特定態樣中，前驅物組成包括以下化學式：(RO)4-xSiHx，其中x為整數0-3、H4-xSi(NR2)x，其中x為整數1-4、H4-xSi(NHR)x，其中x為整數1-4、(RO)3-xHxSi-Si(OR)3-xHx，其中x為整數0-2、(NR1R2)3-xHxSi-Si(NR1R2)3-xHx，其中x為整數0-2，而R、R1、R2分別選自氫基、和支鏈與直鏈之C1-C6烷基。
在本發明之又一特定態樣中，前驅物組成包含矽前驅物，其中矽原子與包括異氰酸基(isocyanato)、甲基乙基酮肟(methylethylketoxime)、三氟乙酸基(trifluoroacetate)、三氟磺酸(triflate,F3SO3H)、烷胺基(alkylamines)、氫化物(hydrides)、烷氧基(alkoxides)、二矽烷(disilanes)和甲酸基(formato)的至少其中一個配位基配位。形成之Si(OH)4溶膠可以不同技術進行縮合，例如包括流入 氨至前驅物水溶液、添加諸如四氯化矽(silicon tetrachloride)之共反應物(如0.05-5%的SiCl4)至烷氧基矽烷(如四乙基正矽酸鹽(tetraethylorthosilicate,TEOS)、二丁氧基二乙醯氧基矽烷(dibutoxydiacetoxysilane,DBDAS)、(EtO)3SiH等)，以產生少量的酸催化物質、或者添加矽烷(Si-H)或二矽烷(Si-Si)前驅物，例如六乙基胺基二矽烷(hexaethylaminodisilane,HEADS)。
在本發明之再一態樣中，另一催化縮合反應之方式涉及混合少量的氯基胺基矽烷(如0.05-5%的Cl4-xSi(NR2)x，其中x為整數0-3)至對應的胺基矽烷(如H4-xSi(NR2)x，其中x為整數1-3)。
同樣地，可按二氧化矽前驅物和氯化合物之重量，將將氯代矽烷(chloro-substituted)與氯代二矽烷(chloro-substituted disilanes)混合物以一定量加到烷氧基矽烷前驅物中，例如0.05-5重量%，以產生縮合反應的有效催化物質。
本發明之一較佳胺基矽烷前驅物為六乙基胺基二矽烷(HEADS)，其在存有水或水氣的環境中會快速縮聚成SiO2。其他較佳的烷基胺基矽烷包括(tBuHN)2(H2N)Si-Si(NH2)(NHtBu)2和Si(NMe2)4。
本發明之較佳二氧化矽前驅物包括下述前驅物(1)-(12)。
其中化學式(2)的OAc代表乙醯氧基(CH3C(O)O-)，化學式(3)和(4)的Me為甲基，化學式(1)、(6)、(7)和(11)的Et為乙基，化學式(2)和(5)的tBu為第三丁基，化學式(8)之OR基的R則代表支鏈或直鏈之C1-C6烷基。
為有效進行處理，利用流動填充技術來間隙填充溝渠的製程應於10分鐘內完成，最好不超過5分鐘，例如3-5分鐘。
二氧化矽前驅物可利用完全填充技術沉積至溝渠凹洞內，例如化學氣相沉積、原子層沉積、或其他氣相接觸基材與前驅物之技術，其乃在低溫下進行(<400℃)，較佳低於350℃，促使二氧化矽前驅物進入及填充溝渠。填滿溝渠的前驅物組成暴露於水或水氣中會水解，隨後進行縮合反應形成二氧化矽材料。
衍生自本發明前驅物的二氧化矽材料接著最好經後固化處理，藉以有效密實二氧化矽。溝渠內的二氧化矽材料量足以構成接觸溝渠壁面與底面的團 塊，而於溝渠內形成同質且實質無孔隙的連續團塊。
任一適合之後固化處理方法可用於溝渠內的二氧化矽材料，以密實由前驅物水解及縮合反應形成的二氧化矽材料。本發明特定實施例採用的較佳特殊後固化處理技術包括將流動填充之材料暴露於氧氣、紫外線照射、及/或低溫加熱，但不以此為限。
第1圖為高深寬比溝渠結構的示意圖，包括二氧化矽填滿溝渠，且二氧化矽是由本發明之前驅物形成。
如第1圖所示，高深寬比溝渠結構10包括具上表面14與下表面16的微電子裝置基材12。基材12包括由側壁壁面20與底面22界定的溝渠18。此結構的溝渠凹洞填滿大量的二氧化矽24，其接觸壁面20與底面22、又實質無孔隙且密度實質均勻遍佈整個體積。
在一較佳實施例中，二氧化矽於溝渠內實質無孔隙之特性可利用測孔儀(porosimetry)、滲透性標準(permeability criteria)、SEM切片、或其他描繪形貌特性之傳統技術證實，以判斷是否存有孔隙。
本發明之上述前驅物和方法能以二氧化矽有效填滿溝渠結構，其中二氧化矽可在低溫條件下固化成實質無孔隙且密度實質均勻遍佈整個體積的二氧化矽。
本發明之另一態樣是關於Ge/Si氧化物組成做 為間隙填充之用，例如填充記憶裝置溝渠。氧化鍺(GeO2)的黏度遠小於二氧化矽(SiO2)。在此態樣中，本發明涵蓋使用氧化矽鍺(SixGe1-xO2)造成足夠的原子重排來癒合因溝渠側壁上之生成物接合而形成的裂縫，進而消除間隙內的不均勻張力。如此在接觸後續裝置結構處理之清潔試劑時，可得到均一的移除速率。
就用於間隙填充的SixGe1-xO2而言，膜層所含的鍺與矽比例較佳為0.005-0.25(化學式SixGe1-xO2的x為0.75-0.995)，並適當降低鍺含量以獲得可接受的介電性質。
就Ge/Si氧化物組成而言，流量只需能填充裂縫及消除不均勻張力即可，且其固化操作可承受高溫。這些特性可將鍺的添加量減至最少，故能最佳化其他膜層性質。為達此目的，較佳之鍺前驅物選自烷氧基鍺烷(germanium alkoxides)：R4-xGe(OR1)x、R4-xGe(NR1R2)x和R4-xGeHx，其中x=0-4，R、R1、R2分別選自支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基。
較佳實施例使用四烷氧基鍺烷(tetra-alkoxygermanes)、Ge(OMe)4(TMOG)或Ge(OEt)4(TEOG)。
四乙基正矽酸鹽/臭氧(TEOS/O3)製程採用烷氧基鍺烷的好處在於，可實質改善膜層的平滑度。由 於裂縫寬度可能與側壁上之生成物接合產生的表面粗糙度有關，故此因素對間隙填充尤其重要。
本發明之另一態樣是關於使用抑制劑從下往上填充間隙。本發明之此態樣善用溝渠底部生長速率比上部快之沉積製程來縮短裂縫長度，甚至消除裂縫。因此本發明涵蓋使用“抑制劑”化學物質來相對溝渠底部抑制溝渠外部之沉積。由於傳遞至溝渠特徵結構內的速率比傳遞至晶圓表面的速率慢，故可降低溝渠內的抑制劑濃度。為了在溝渠內形成低濃度，需消耗一些抑制劑物質，例如藉由臭氧媒介氧化以致在氣相中或表面上分解或反應。
就四乙基正矽酸鹽(TEOS)/臭氧製程而言，添加甲醇可平坦化沉積輪廓。因TEOS/O3反應產物積聚會抑制生長，故將減慢沉積至深寬比很高之結構的速率。TEOS/O3反應產物包括乙醛及/或適量的環氧乙烷，活性物質包括具羰基官能基的碳氫化合物，其為醇與臭氧氧化的產物。
更廣泛地說，許多碳氫化合物可當作抑制劑來修改溝渠內的沉積膜輪廓。其包括具一或多個羰基或一或多個羥基的碳氫化合物。
在此，“抑制劑”為伴隨前驅物引至基材上時將減慢生長速率的物質。
第2圖為微電子裝置結構50的示意圖，其中基材52包括由側壁54和底面55界定的溝渠58。
第2圖顯示抑制劑置於含有前驅物的沉積材料56中，第3圖繪示氧化物60形成在裝置結構50的主面和溝渠58內。因抑制劑傳遞至溝渠內的速率較慢、加上抑制劑消耗將使得溝渠底部的抑制劑濃度降低，是以氧化物生長速率較快。隨著溝渠封閉，此作用越強。
理想的抑制劑具有低氣體擴散速率和高分子量，且能有效抑制膜層生長。抑制劑消耗量與沉積系統的質傳程度有關。理想上，抑制劑被臭氧氧化並分解及與四乙基正矽酸鹽反應。藉著控制表面反應，可控制TEOS/O3製程的氧化物生長速率。特殊應用的較佳抑制劑包括醇類和醇氧化產物。
使用氧化鍺/二氧化矽(GeO2/SiO2)混合物來間隙填充溝渠乃善用GeO2/SiO2黏度實質較低之優勢(尤其是在退火條件下)。若GeO2/SiO2混合物含有少量GeO2/SiO2，則因GeO2/SiO2黏度實質較低而可實質釋放張力；若含有適量GeO2/SiO2，則其有十足的流動性來癒合溝渠填充材料內的窄裂縫結構。烷氧基鍺烷可用於適合填充溝渠的GeO2/SiO2混合物。相較於只含SiO2，含鍺之GeO2/SiO2混合物在高溫下有更佳的流動性、更少的水氣含量、更低的膜層粗糙度、和相當均一的化學反應性。鍺含量宜適當限制，以免接觸到如氟化氫之蝕刻劑時造成過度蝕刻及避免固化之填充材料產生洩漏和強度崩潰等問 題。另外，退火操作期限制或甚至避開氫環境，以免GeO2/SiO2還原成GeO。
以下反應涉及溶膠-凝膠溶液形成氧化物填充材料的化學作用，包括TEOS的水解反應： 和矽醇基(silanol)的(聚)縮合反應：
在此反應過程中，每當形成一矽醇基架橋，即耗去一水分子。凝膠結構與TEOS與水的反應劑濃度和沉積填充材料的pH有關。在酸性溶液中，傾向完全水解而產生較少的交聯鏈，且有時會引起再酯化(reesterification)(反向水解)反應。在鹼性溶液中，會形成較多交聯的結構，且促進水解及阻礙縮合的水濃度較高，故氧化物材料的交聯密度較高。
就酸和鹼催化水解反應而言，酸催化水解反應 按以下包含H3O+之親電性機制進行：
鹼催化水解反應按以下親核性反應機制進行：
相對於烷氧基，矽醇基形成將降低矽原子的電子密度，故在鹼催化系統中，傾向攻擊具較多矽醇基的矽中心，而在酸催化系統中，傾向攻擊具較多烷氧基的矽中心。因此在酸性溶液中傾向形成長鏈，在鹼性溶液中則傾向進行交聯。
就用來沉積氧化膜材料的TEOS/臭氧系統而言，TEOS/臭氧反應產物或烷氧配位基之氧化產物列於表1。
就TEOS/臭氧製程而言，添加醇類會增強流動特性，特別是添加甲醇。在醇氧化反應中，一級醇經二次氧化後會產生一當量的水和一當量的羧酸。
熟諳此技藝者可依據本文憑經驗挑選任一適合醇類加入TEOS/臭氧製程。本發明之特定實施例可採用諸如甲醇等醇類、甲酸、乙酸和丙酸。更廣泛地說，具羥基官能基的化合物可用於TEOS/O3製程，以加強溝渠填充特性。
在一特定實施例中，具羥基官能基的物質包括二元醇(如乙二醇(ethylene glycol))和鹵化醇(如2,2,2-三氯乙醇(2,2,2-tricholoroethanol))。
二元醇經過以下反應會形成二羧酸：
多元醇產生的酸比一級醇產生的酸強。鹵化醇氧化後將產生更強的羧酸(如以下反應所示)。三氯乙酸(trichloracetic acid)的pKa為0.77。
故本發明使用鍺與氧化矽混合物及利用含醇或其他抑制劑物質來防止或減少填充過程形成裂縫，進而改善溝渠結構的間隙填充結果。
本發明克服了進行TEOS/臭氧製程填充溝渠結構(尤其是高深寬比結構)產生裂縫的相關問題。
更廣泛地說，在此已相當了解利用烷氧化矽前驅物於水溶液中合成二氧化矽的化學作用。在溶膠-凝膠製程中，TEOS可以鹼或酸催化水解產生矽醇基和二當量的乙醇。在後續反應步驟中，二矽醇基縮合成矽氧烷架橋並釋出一當量的水。縮合後，通常仍留有一些矽醇基與未反應的烷氧基和反應產物。如此得到半固態混合物，其稱為凝膠。若欲得到 SiO2，則接著加熱凝膠以移除副產物及進一步縮合(鍛燒(calcinations))。最終結構的鍵角和缺陷取決於溶液的pH、水與TEOS濃度、和鍛燒條件。
TEOS與溶液的水解和縮合在酸催化溶液中是按親電性反應機制進行，此與鹼催化溶液的親核性反應相反。因此，水解較少之矽中心上的烷氧基比水解較多之矽中心更不穩定進行縮合。是以傾向形成鏈結構。反之，鹼催化將使已水解之矽中心更易進行縮合。故在縮合前會產生水解更完全的物質，以致交聯程度較高。
水解會消耗水，縮合則會釋出水。水濃度越高，越能促進水解及阻礙縮合，故交聯密度越高。
在TEOS/臭氧製程中，產生矽醇後、接著使矽醇基縮合成矽氧烷架橋尚會形成膜層。烷氧基也會氧化(產生乙醛、甲醛、CO、CO2和矽醇基)。TEOS/臭氧製程存有水與酸可引起水解反應而形成SiO2膜。
加入TEOS/臭氧製程的醇若氧化將產生羧酸。由較小之一級醇產生的酸的pKa較低，故能更有效地催化水解。
在臭氧環境中氧化的物質可用來控制TEOS/臭氧製程的化學反應。例如，醇經二次氧化後會產生水和羧酸(例如，乙醇經二次氧化後產生乙酸)。添加中間物(乙醛)則會產生酸而不產生水，藉此可控制酸 /水的比例。
此法優於直接添加水和酸。因醇/醛或其他有機物可與烷氧化物形成穩定的混合物，而酸及/或水與烷氧化物之混合物會反應過久。液態混合物能更精確地控制反應劑比例，並且容許同步產生不夠穩定供有效輸送的物質。使用醛時不會加入水，因此需要縮合反應產生的水來進一步水解。另一優點為具有避免生成較不安全且較不穩定之烷氧化物的彈性。例如，TEOS比四甲氧基矽烷(tetramethoxysilane,TMOS)佳，因TMOS毒性較大又更易反應成大氣污染物。但TMOS有較佳的流動性。倘若重要差異在於存有TMOS分解產生的甲酸，則使用TEOS與甲醇也可得到類似的結果。
越強的酸越容易催化水解。這些強酸可由乙二醇或鹵化醇(如三氯乙醇(trichloroethanol)或三氟乙醇(trifluoroethanol))形成。乙二醇氧化後會產生草酸(oxalic acid)(pKa=1.23)，三氯乙醇和三氟乙醇氧化後會產生三氯乙酸(trichloroacetic acid)和三氟乙酸(trifluoroacetic acid)(pKa分別為0.77和0.30)。
就採用單一溶液之方法而言，加入TEOS/臭氧製程的添加劑必須可溶於烷氧化物。在一些例子中，需加入共溶劑才能形成溶液。例如，TEOS和乙二醇的互溶性有限，但添加異丙醇(isopropyl alchohol,IPA)後可形成溶液。
故加入所述之添加劑可實質提高TEOS/臭氧製程的效率。
從以下非限制用之間隙填充製程實施例可更清楚了解本發明之特徵和優點。
間隙填充製程實施例
沉積的施行是使用應用材料公司的P5000反應器進行TEOS/臭氧製程。藉由SEM切片及以200：1之H2O：HF染色測量截面的孔隙面積，可知孔隙比例。染色時間為選擇讓同一回沉積之毯覆膜證物(blanket film witness pieces)被移除5nm之SiO2。實施例1、2、3的結果列於以下列表。
實施例1
實施例2
實施例3
雖然本發明已以特定態樣、特徵結構和實施例揭露如上，但應理解其並非用以限定本發明，一般熟習此技藝者可依據本文進行各種更動、潤飾與替代，本發明當涵蓋這些實施例。因此在不脫離本發明之精神和範圍內，本發明之保護範圍當視後附之申請專利範圍所界定者為準。
10‧‧‧溝渠結構
12‧‧‧基材
14、16‧‧‧表面
18‧‧‧溝渠
20‧‧‧壁面
22‧‧‧底面
24‧‧‧二氧化矽

Claims (19)

  1. 一種沉積二氧化矽至一基材上的方法，包含使一基材接觸一前驅物矽化合物之一蒸氣，該前驅物矽化合物選自以下構成之一群組：(i)化學式為(R1R2N)4-xSiRx的胺基矽烷，其中x為整數0至3，R、R1、R2分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(ii)化學式為(RO)4-xSiR1 x的烷氧基矽烷，其中x為整數0至3，R、R1分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(iii)化學式為(RO)3-xR1 xSi-Si(OR)3-xR1 x的烷氧基二矽烷，其中x為整數0至2，R、R1分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(iv)化學式為(R1R2N)3-xRxSi-Si(NR1R2)3-xRx的胺基二矽烷，其中x為整數0至2，R、R1、R2分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(v)化學式為(R1R2N)3-xRxSi-O-Si(NR1R2)3-xRx的胺基二矽氧烷，其中x為整數0至2，R、R1、R2分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(vi)化學式為(RO)3-xR1 xSi-O-Si(OR)3-xR1 x的烷氧基二矽氧烷，其中x為整數0至2，R、R1分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(vii)化學式為(R1R2N)3-xRxSi-NH-Si(NR1R2)3-xRx的胺 基二矽氮烷，其中x為整數0至2，R、R1、R2分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(viii)化學式為(RO)3-xR1 xSi-NH-Si(OR)3-xR1 x的烷氧基二矽氮烷，其中x為整數0至2，R、R1分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(ix)氯基胺基矽烷，化學式為Cl4-xSi(NR1R2)x，其中x為整數0至3、(R1R2N)3-xClxSi-Si(NR1R2)3-xClx，其中x為整數1或2、(R1R2N)3-xClxSi-O-Si(NR1R2)3-xClx，其中x為整數1或2、和(R1R2N)3-xClxSi-NH-Si(NR1R2)3-xClx，其中x為整數1或2，且R1、R2分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(x)環矽氧烷和環矽氮烷，化學式為： 其中n為整數0至4，R1、R2分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基、C6-C13芳香基、C1-C6二烷胺基和C1-C6烷氧基(alkoxide)；(xi)線性聚矽氧烷和聚矽氮烷；(xii)矽化合物，化學通式為R4-xSiLx，其中x為整數1至3、和L3-xRxSi-SiL3-xRx，其中x為整數0至2，而L選自異氰酸基(NCO)、甲基乙基酮肟(R1R2C=N-O-)、三氟乙 酸基(CF3OCO)、三氟甲磺酸基(CF3SO3)、醯氧基(ROCO)、β-二酮(R1COCHCOR2)、β-二酮亞胺(R1CNR2CHCOR3)、β-二亞胺(R1CNR2CHCNR2R3)、脒(RC(NR1)2)、胍{(R1R2N)C(NR3)2}、烷胺基(NR1R2)、氫化物、烷氧基(RO)和甲酸基(HCOO)，R、R1、R2、R3分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(xiii)環氧乙烷基矽烷，化學式為： 其中x為整數0至3，n為整數0至3，R1、R2、R3分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基、C6-C13芳香基、C1-C6烷胺基和C1-C6烷氧基；(xiv)含乙酸乙酯基之矽前驅物，化學式為(ROCOCH2CH2)xSi(OR1)4-x，其中x為整數1至4，R、R1分別選自氫基、支鏈與直鏈之C1-C6烷基、C3-C8環烷基和C6-C13芳香基；(xv)(tBuHN)2(H2N)Si-Si(NH2)(NHtBu)2，其中tBu為第三丁基；以及(xvi)上述化合物(i)-(xv)之預聚物的部分水解產物；以及更包括使該基材接觸一前驅物鍺化合物之一蒸氣。
  2. 如申請專利範圍第1項所述之方法，其中該接觸步驟包含化學氣相沉積。
  3. 如申請專利範圍第1項所述之方法，其中該接觸步驟包含原子層沉積。
  4. 如申請專利範圍第1項所述之方法，更包含進行該前驅物矽化合物的水解反應與縮合化學反應，以形成二氧化矽於該基材上。
  5. 如申請專利範圍第1項所述之方法，其中該前驅物矽化合物包含一選自以下構成群組之化合物：(a)化學式為(RO)4-xSiHx之化合物，其中x為整數0至3；(b)化學式為H4-xSi(NR2)x之化合物，其中x為整數1至4；(c)化學式為H4-xSi(NHR)x之化合物，其中x為整數1至4；(d)化學式為(RO)3-xHxSi-Si(OR)3-xHx之化合物，其中x為整數0至2；以及(e)化學式為(NR1R2)3-xHxSi-Si(NR1R2)3-xHx之化合物，其中x為整數0至2，其中R、R1、R2分別選自氫基、和支鏈與直鏈之C1-C6 烷基。
  6. 如申請專利範圍第1項所述之方法，其中該前驅物矽化合物包含一選自由矽化合物所構成之群組的化合物，該矽化合物之一矽原子與包括異氰酸基、甲基乙基酮肟、三氟乙酸基、三氟磺酸(F3SO3H)、烷胺基、氫化物、烷氧基、二矽烷和甲酸基(formato)之至少其中一者的配位基配位。
  7. 如申請專利範圍第1項所述之方法，其中該前驅物矽化合物包含六乙基胺基二矽烷。
  8. 如申請專利範圍第1項所述之方法，其中該二氧化矽前驅物組成包含(tBuHN)2(H2N)Si-Si(NH2)(NHtBu)2和Si(NMe2)4。
  9. 如申請專利範圍第1項所述之方法，其中該前驅物矽化合物包含一選自以下構成群組之化合物： 其中化學式(2)的OAc代表乙醯氧基(CH3C(O)O-)，化學 式(3)和(4)的Me為甲基，化學式(1)、(6)、(7)和(11)的Et為乙基，化學式(2)和(5)的tBu為第三丁基，化學式(8)之OR基的R代表支鏈或直鏈之C1-C6烷基。
  10. 如申請專利範圍第1項所述之方法，其中該前驅物鍺化合物包含烷氧基鍺烷(germanium alkoxide)。
  11. 如申請專利範圍第1項所述之方法，其中該前驅物鍺化合物包含TMOG。
  12. 如申請專利範圍第1項所述之方法，其中該接觸步驟是在一氧化氛圍下進行。
  13. 如申請專利範圍第12項所述之方法，其中該氧化氛圍包括臭氧。
  14. 如申請專利範圍第1項所述之方法，其中一羥基官能基化合物存在於該蒸氣中。
  15. 如申請專利範圍第14項所述之方法，其中該羥基官能基化合物選自由異丙醇、乙醇及其混合物所組成之一群組。
  16. 如申請專利範圍第14項所述之方法，其中該羥基官能 基化合物為乙醇。
  17. 如申請專利範圍第14項所述之方法，其中該羥基官能基化合物為甲醇。
  18. 如申請專利範圍第14項所述之方法，其中該羥基官能基化合物選自由甲醇、甲酸、乙酸和丙酸構成之一群組。
  19. 一種沉積二氧化矽至一基材上的方法，包含使一基材接觸一前驅物矽化合物之一蒸氣，其中該二氧化矽前驅物組成包含(tBuHN)2(H2N)Si-Si(NH2)(NHtBu)2和Si(NMe2)4。
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