TWI549988B - 反射板用聚醯胺組成物、反射板、具備該反射板之發光裝置、以及具備該發光裝置之照明裝置及影像顯示裝置 - Google Patents
反射板用聚醯胺組成物、反射板、具備該反射板之發光裝置、以及具備該發光裝置之照明裝置及影像顯示裝置 Download PDFInfo
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- TWI549988B TWI549988B TW101102758A TW101102758A TWI549988B TW I549988 B TWI549988 B TW I549988B TW 101102758 A TW101102758 A TW 101102758A TW 101102758 A TW101102758 A TW 101102758A TW I549988 B TWI549988 B TW I549988B
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- 239000000203 mixture Substances 0.000 title claims description 72
- 239000004952 Polyamide Substances 0.000 title description 15
- 229920002647 polyamide Polymers 0.000 title description 15
- 238000005286 illumination Methods 0.000 title description 13
- 229920000768 polyamine Polymers 0.000 claims description 98
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 33
- 238000002844 melting Methods 0.000 claims description 25
- 230000008018 melting Effects 0.000 claims description 25
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 25
- 238000006116 polymerization reaction Methods 0.000 claims description 20
- 125000001142 dicarboxylic acid group Chemical group 0.000 claims description 13
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 12
- PXGZQGDTEZPERC-UHFFFAOYSA-N 1,4-cyclohexanedicarboxylic acid Chemical compound OC(=O)C1CCC(C(O)=O)CC1 PXGZQGDTEZPERC-UHFFFAOYSA-N 0.000 claims description 10
- 239000012779 reinforcing material Substances 0.000 claims description 10
- 239000004642 Polyimide Substances 0.000 claims description 9
- 229920001721 polyimide Polymers 0.000 claims description 9
- 239000000395 magnesium oxide Substances 0.000 claims description 8
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 8
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 8
- 150000004985 diamines Chemical class 0.000 claims description 7
- 239000003365 glass fiber Substances 0.000 claims description 6
- SXJVFQLYZSNZBT-UHFFFAOYSA-N nonane-1,9-diamine Chemical group NCCCCCCCCCN SXJVFQLYZSNZBT-UHFFFAOYSA-N 0.000 claims description 6
- 125000004432 carbon atom Chemical group C* 0.000 claims description 5
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 claims description 5
- 239000000347 magnesium hydroxide Substances 0.000 claims description 5
- 229910001862 magnesium hydroxide Inorganic materials 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 229910052586 apatite Inorganic materials 0.000 claims 1
- QYQADNCHXSEGJT-UHFFFAOYSA-N cyclohexane-1,1-dicarboxylate;hydron Chemical group OC(=O)C1(C(O)=O)CCCCC1 QYQADNCHXSEGJT-UHFFFAOYSA-N 0.000 claims 1
- VSIIXMUUUJUKCM-UHFFFAOYSA-D pentacalcium;fluoride;triphosphate Chemical compound [F-].[Ca+2].[Ca+2].[Ca+2].[Ca+2].[Ca+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O VSIIXMUUUJUKCM-UHFFFAOYSA-D 0.000 claims 1
- 238000007789 sealing Methods 0.000 description 31
- -1 aromatic dicarboxylic acids Chemical class 0.000 description 30
- 238000000034 method Methods 0.000 description 26
- 239000004065 semiconductor Substances 0.000 description 25
- 239000000565 sealant Substances 0.000 description 23
- 239000000758 substrate Substances 0.000 description 18
- 230000000052 comparative effect Effects 0.000 description 16
- 238000012360 testing method Methods 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 12
- 239000002245 particle Substances 0.000 description 12
- 238000000465 moulding Methods 0.000 description 11
- 239000011347 resin Substances 0.000 description 11
- 229920005989 resin Polymers 0.000 description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 10
- 239000002253 acid Substances 0.000 description 10
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 10
- 125000004427 diamine group Chemical group 0.000 description 10
- KKEYFWRCBNTPAC-UHFFFAOYSA-N terephthalic acid group Chemical group C(C1=CC=C(C(=O)O)C=C1)(=O)O KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 239000003795 chemical substances by application Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000001746 injection moulding Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000007790 solid phase Substances 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 6
- 238000005452 bending Methods 0.000 description 6
- 239000007822 coupling agent Substances 0.000 description 6
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 6
- 239000004611 light stabiliser Substances 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 239000000523 sample Substances 0.000 description 6
- 230000003746 surface roughness Effects 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000005711 Benzoic acid Substances 0.000 description 5
- RJGDLRCDCYRQOQ-UHFFFAOYSA-N anthrone Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3CC2=C1 RJGDLRCDCYRQOQ-UHFFFAOYSA-N 0.000 description 5
- 235000010233 benzoic acid Nutrition 0.000 description 5
- 238000002845 discoloration Methods 0.000 description 5
- 239000000155 melt Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000009257 reactivity Effects 0.000 description 5
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 5
- GAGWMWLBYJPFDD-UHFFFAOYSA-N 2-methyloctane-1,8-diamine Chemical compound NCC(C)CCCCCCN GAGWMWLBYJPFDD-UHFFFAOYSA-N 0.000 description 4
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 4
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 4
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 4
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical group NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 description 4
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 4
- 150000001412 amines Chemical class 0.000 description 4
- QMKYBPDZANOJGF-UHFFFAOYSA-N benzene-1,3,5-tricarboxylic acid Chemical compound OC(=O)C1=CC(C(O)=O)=CC(C(O)=O)=C1 QMKYBPDZANOJGF-UHFFFAOYSA-N 0.000 description 4
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 4
- PAFZNILMFXTMIY-UHFFFAOYSA-N cyclohexylamine Chemical compound NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 description 4
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 4
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 4
- 239000000835 fiber Substances 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 4
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 4
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 4
- 230000014759 maintenance of location Effects 0.000 description 4
- 150000002762 monocarboxylic acid derivatives Chemical class 0.000 description 4
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 4
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- WLJVNTCWHIRURA-UHFFFAOYSA-N pimelic acid Chemical compound OC(=O)CCCCCC(O)=O WLJVNTCWHIRURA-UHFFFAOYSA-N 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- KIDHWZJUCRJVML-UHFFFAOYSA-N putrescine Chemical compound NCCCCN KIDHWZJUCRJVML-UHFFFAOYSA-N 0.000 description 4
- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellitic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- CXMXRPHRNRROMY-UHFFFAOYSA-N sebacic acid Chemical compound OC(=O)CCCCCCCCC(O)=O CXMXRPHRNRROMY-UHFFFAOYSA-N 0.000 description 4
- TYFQFVWCELRYAO-UHFFFAOYSA-N suberic acid Chemical compound OC(=O)CCCCCCC(O)=O TYFQFVWCELRYAO-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- SZHOJFHSIKHZHA-UHFFFAOYSA-N tridecanoic acid Chemical compound CCCCCCCCCCCCC(O)=O SZHOJFHSIKHZHA-UHFFFAOYSA-N 0.000 description 4
- ARCGXLSVLAOJQL-UHFFFAOYSA-N trimellitic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 ARCGXLSVLAOJQL-UHFFFAOYSA-N 0.000 description 4
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 4
- MHZGKXUYDGKKIU-UHFFFAOYSA-N Decylamine Chemical compound CCCCCCCCCCN MHZGKXUYDGKKIU-UHFFFAOYSA-N 0.000 description 3
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000001361 adipic acid Substances 0.000 description 3
- 235000011037 adipic acid Nutrition 0.000 description 3
- 125000002723 alicyclic group Chemical group 0.000 description 3
- 125000001931 aliphatic group Chemical group 0.000 description 3
- 125000003277 amino group Chemical group 0.000 description 3
- 229910000420 cerium oxide Inorganic materials 0.000 description 3
- YQLZOAVZWJBZSY-UHFFFAOYSA-N decane-1,10-diamine Chemical compound NCCCCCCCCCCN YQLZOAVZWJBZSY-UHFFFAOYSA-N 0.000 description 3
- NJLLQSBAHIKGKF-UHFFFAOYSA-N dipotassium dioxido(oxo)titanium Chemical compound [K+].[K+].[O-][Ti]([O-])=O NJLLQSBAHIKGKF-UHFFFAOYSA-N 0.000 description 3
- YLQWCDOCJODRMT-UHFFFAOYSA-N fluoren-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3C2=C1 YLQWCDOCJODRMT-UHFFFAOYSA-N 0.000 description 3
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- 229910052747 lanthanoid Inorganic materials 0.000 description 3
- 150000002602 lanthanoids Chemical class 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 3
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- 229920001187 thermosetting polymer Polymers 0.000 description 3
- 239000011135 tin Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- BMVXCPBXGZKUPN-UHFFFAOYSA-N 1-hexanamine Chemical compound CCCCCCN BMVXCPBXGZKUPN-UHFFFAOYSA-N 0.000 description 2
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 2
- PBLZLIFKVPJDCO-UHFFFAOYSA-N 12-aminododecanoic acid Chemical compound NCCCCCCCCCCCC(O)=O PBLZLIFKVPJDCO-UHFFFAOYSA-N 0.000 description 2
- WKRCUUPMCASSBN-UHFFFAOYSA-N 2,2-diethylbutanedioic acid Chemical compound CCC(CC)(C(O)=O)CC(O)=O WKRCUUPMCASSBN-UHFFFAOYSA-N 0.000 description 2
- BTUDGPVTCYNYLK-UHFFFAOYSA-N 2,2-dimethylglutaric acid Chemical compound OC(=O)C(C)(C)CCC(O)=O BTUDGPVTCYNYLK-UHFFFAOYSA-N 0.000 description 2
- JZUHIOJYCPIVLQ-UHFFFAOYSA-N 2-methylpentane-1,5-diamine Chemical compound NCC(C)CCCN JZUHIOJYCPIVLQ-UHFFFAOYSA-N 0.000 description 2
- WMRCTEPOPAZMMN-UHFFFAOYSA-N 2-undecylpropanedioic acid Chemical compound CCCCCCCCCCCC(C(O)=O)C(O)=O WMRCTEPOPAZMMN-UHFFFAOYSA-N 0.000 description 2
- ZNDXVWOTBGFGPJ-UHFFFAOYSA-N 3,4-diphenylphthalic acid Chemical compound C=1C=CC=CC=1C1=C(C(O)=O)C(C(=O)O)=CC=C1C1=CC=CC=C1 ZNDXVWOTBGFGPJ-UHFFFAOYSA-N 0.000 description 2
- VTDMBRAUHKUOON-UHFFFAOYSA-N 4-[(4-carboxyphenyl)methyl]benzoic acid Chemical compound C1=CC(C(=O)O)=CC=C1CC1=CC=C(C(O)=O)C=C1 VTDMBRAUHKUOON-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
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- 235000019738 Limestone Nutrition 0.000 description 2
- 229920000106 Liquid crystal polymer Polymers 0.000 description 2
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 2
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- REYJJPSVUYRZGE-UHFFFAOYSA-N Octadecylamine Chemical compound CCCCCCCCCCCCCCCCCCN REYJJPSVUYRZGE-UHFFFAOYSA-N 0.000 description 2
- 235000021314 Palmitic acid Nutrition 0.000 description 2
- 229930040373 Paraformaldehyde Natural products 0.000 description 2
- 235000021355 Stearic acid Nutrition 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- OJMOMXZKOWKUTA-UHFFFAOYSA-N aluminum;borate Chemical compound [Al+3].[O-]B([O-])[O-] OJMOMXZKOWKUTA-UHFFFAOYSA-N 0.000 description 2
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 2
- VHRGRCVQAFMJIZ-UHFFFAOYSA-N cadaverine Chemical compound NCCCCCN VHRGRCVQAFMJIZ-UHFFFAOYSA-N 0.000 description 2
- 229910000019 calcium carbonate Inorganic materials 0.000 description 2
- OSGAYBCDTDRGGQ-UHFFFAOYSA-L calcium sulfate Chemical compound [Ca+2].[O-]S([O-])(=O)=O OSGAYBCDTDRGGQ-UHFFFAOYSA-L 0.000 description 2
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- 239000013078 crystal Substances 0.000 description 2
- XBZSBBLNHFMTEB-UHFFFAOYSA-N cyclohexane-1,3-dicarboxylic acid Chemical compound OC(=O)C1CCCC(C(O)=O)C1 XBZSBBLNHFMTEB-UHFFFAOYSA-N 0.000 description 2
- NZNMSOFKMUBTKW-UHFFFAOYSA-N cyclohexanecarboxylic acid Chemical compound OC(=O)C1CCCCC1 NZNMSOFKMUBTKW-UHFFFAOYSA-N 0.000 description 2
- RELFMIMPBVFVKQ-UHFFFAOYSA-N cyclooctane-1,1-dicarboxylic acid Chemical compound OC(=O)C1(C(O)=O)CCCCCCC1 RELFMIMPBVFVKQ-UHFFFAOYSA-N 0.000 description 2
- JQVDAXLFBXTEQA-UHFFFAOYSA-N dibutylamine Chemical compound CCCCNCCCC JQVDAXLFBXTEQA-UHFFFAOYSA-N 0.000 description 2
- OREAFAJWWJHCOT-UHFFFAOYSA-N dimethylmalonic acid Chemical compound OC(=O)C(C)(C)C(O)=O OREAFAJWWJHCOT-UHFFFAOYSA-N 0.000 description 2
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- 239000012153 distilled water Substances 0.000 description 2
- QFTYSVGGYOXFRQ-UHFFFAOYSA-N dodecane-1,12-diamine Chemical compound NCCCCCCCCCCCCN QFTYSVGGYOXFRQ-UHFFFAOYSA-N 0.000 description 2
- JBKVHLHDHHXQEQ-UHFFFAOYSA-N epsilon-caprolactam Chemical compound O=C1CCCCCN1 JBKVHLHDHHXQEQ-UHFFFAOYSA-N 0.000 description 2
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- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- KQNPFQTWMSNSAP-UHFFFAOYSA-N isobutyric acid Chemical compound CC(C)C(O)=O KQNPFQTWMSNSAP-UHFFFAOYSA-N 0.000 description 2
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- 229910052746 lanthanum Inorganic materials 0.000 description 2
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- 239000006028 limestone Substances 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 2
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- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 2
- ABMFBCRYHDZLRD-UHFFFAOYSA-N naphthalene-1,4-dicarboxylic acid Chemical compound C1=CC=C2C(C(=O)O)=CC=C(C(O)=O)C2=C1 ABMFBCRYHDZLRD-UHFFFAOYSA-N 0.000 description 2
- RXOHFPCZGPKIRD-UHFFFAOYSA-N naphthalene-2,6-dicarboxylic acid Chemical compound C1=C(C(O)=O)C=CC2=CC(C(=O)O)=CC=C21 RXOHFPCZGPKIRD-UHFFFAOYSA-N 0.000 description 2
- WPUMVKJOWWJPRK-UHFFFAOYSA-N naphthalene-2,7-dicarboxylic acid Chemical compound C1=CC(C(O)=O)=CC2=CC(C(=O)O)=CC=C21 WPUMVKJOWWJPRK-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
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- BBPXVYVXKAYBSS-UHFFFAOYSA-N hexane-2,5-diamine Chemical compound CC(N)CCC(C)N BBPXVYVXKAYBSS-UHFFFAOYSA-N 0.000 description 1
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- 230000001771 impaired effect Effects 0.000 description 1
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- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 229940018564 m-phenylenediamine Drugs 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
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- 239000004337 magnesium citrate Substances 0.000 description 1
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- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
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- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
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- 238000010295 mobile communication Methods 0.000 description 1
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- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- YWWNNLPSZSEZNZ-UHFFFAOYSA-N n,n-dimethyldecan-1-amine Chemical compound CCCCCCCCCCN(C)C YWWNNLPSZSEZNZ-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-N o-dicarboxybenzene Natural products OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 1
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- 150000007524 organic acids Chemical class 0.000 description 1
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- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
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- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 1
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- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- IUGYQRQAERSCNH-UHFFFAOYSA-N pivalic acid Chemical compound CC(C)(C)C(O)=O IUGYQRQAERSCNH-UHFFFAOYSA-N 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- AOHJOMMDDJHIJH-UHFFFAOYSA-N propylenediamine Chemical compound CC(N)CN AOHJOMMDDJHIJH-UHFFFAOYSA-N 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 229910052903 pyrophyllite Inorganic materials 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 229910052895 riebeckite Inorganic materials 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- YBCAZPLXEGKKFM-UHFFFAOYSA-K ruthenium(iii) chloride Chemical compound [Cl-].[Cl-].[Cl-].[Ru+3] YBCAZPLXEGKKFM-UHFFFAOYSA-K 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 239000012488 sample solution Substances 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
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- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 229910052624 sepiolite Inorganic materials 0.000 description 1
- 235000019355 sepiolite Nutrition 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 125000000446 sulfanediyl group Chemical group *S* 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000004448 titration Methods 0.000 description 1
- 150000004992 toluidines Chemical class 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 235000013337 tricalcium citrate Nutrition 0.000 description 1
- PLSARIKBYIPYPF-UHFFFAOYSA-H trimagnesium dicitrate Chemical compound [Mg+2].[Mg+2].[Mg+2].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O PLSARIKBYIPYPF-UHFFFAOYSA-H 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V7/00—Reflectors for light sources
- F21V7/22—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G69/00—Macromolecular compounds obtained by reactions forming a carboxylic amide link in the main chain of the macromolecule
- C08G69/02—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids
- C08G69/26—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids derived from polyamines and polycarboxylic acids
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G69/00—Macromolecular compounds obtained by reactions forming a carboxylic amide link in the main chain of the macromolecule
- C08G69/02—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids
- C08G69/26—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids derived from polyamines and polycarboxylic acids
- C08G69/265—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids derived from polyamines and polycarboxylic acids from at least two different diamines or at least two different dicarboxylic acids
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
- C08K2003/2237—Oxides; Hydroxides of metals of titanium
- C08K2003/2241—Titanium dioxide
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/014—Additives containing two or more different additives of the same subgroup in C08K
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
- C08K3/013—Fillers, pigments or reinforcing additives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31725—Of polyamide
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Medicinal Chemistry (AREA)
- Organic Chemistry (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Engineering & Computer Science (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Led Device Packages (AREA)
- Polyamides (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Description
本發明係關於一種反射板用聚醯胺組成物、使用有該組成物之反射板、及具備該反射板之發光裝置。本發明又係關於一種具備該發光裝置之照明裝置及影像顯示裝置。
近年來,LED(Light Emitting Diode)係有效利用低消耗電力、低環境負荷等優點,而用於行動電話等移動通信機器等小型顯示器、電腦或液晶TV等中型/大型顯示器、汽車之控制台面板或車內照明、家庭用照明、廣告牌或顯示燈、信號機、以及其他家電用品等各種電氣電子機器產品。
一般而言,LED係用作LED封裝,LED封裝係主要由發光之半導體元件(LED)、導線、兼作外殼之反射板、密封半導體元件之透明之密封構件構成。用於該反射板之材料,已知有陶瓷。然而,於反射板使用陶瓷之情形時,生產性或初始反射率較低成為問題。用於反射板之材料,亦已知有耐熱塑膠。例如,專利文獻1~5中揭示有該反射板之耐熱塑膠使用聚醯胺中摻合有氧化鈦之組成物之情形。
耐熱塑膠製之反射板因為於製造LED封裝時使導電接著劑或密封劑熱硬化時,於100~200℃之溫度曝露達到數小時,故而要求耐熱性。又,要求不引起製造LED封裝時之高熱、或使用環境下之變色等,而維持較高之光反射率(尤其是於白色LED用途對於波長460nm附近之光的反射
率)。進而,要求作為反射板之力學特性良好。又,要求與密封構件之密合性較高。
如此,對耐熱塑膠製之反射板要求許多特性,引用文獻1~5記載之技術中存在改善之餘地。
專利文獻1:日本特開2002-294070號公報
專利文獻2:日本特開2004-075994號公報
專利文獻3:日本特開2005-194513號公報
專利文獻4:日本特開2006-257314號公報
專利文獻5:國際公開第2007/037355號手冊
鑒於上述情況,本發明之目的在於提供一種於成形時,具有較高之耐熱性與良好之力學物性,且與LED封裝用密封構件之密合性優異,又即便於LED封裝之製造步驟或使用環境中受到設想之熱或光之後亦保持較高之反射率的反射板用聚醯胺組成物及由該組成物構成之反射板、以及具備該反射板之發光裝置。又,本發明之目的在於提供一種具備該發光裝置之照明裝置及影像顯示裝置。
本發明人等經過潛心研究之後發現,若就藉由於特定之聚醯胺樹脂中高度地摻合有氧化鈦之組成物,則可達成上述目的,從而完成本發明。
即,本發明係一種反射板用聚醯胺組成物,其含有30質量%以上之熔點為280℃以上之聚醯胺(A)、及25質量%以上之氧化鈦(B),且上述聚醯胺(A)與上述氧化鈦(B)之合計含量為75質量%以上。
又,本發明係一種LED用反射板,其使用有上述反射板用聚醯胺組成物。
又,本發明係一種發光裝置,其具備上述LED用反射板。
又,本發明係一種照明裝置,其具備上述發光裝置。
又,本發明係一種影像顯示裝置,其具備上述發光裝置。
將本發明之反射板用聚醯胺組成物成形所得之反射板具有良好之力學特性並且具有較高之耐熱性。又,該反射板與LED封裝用密封構件之密合性優異。進而,該反射板即便於LED封裝之製造步驟或使用環境中受到設想之熱或光之後亦保持較高之反射率(尤其對於波長460nm附近之光的反射率)。因此,具備該反射板之發光裝置、以及具備該發光裝置之照明裝置及影像顯示裝置其使用壽命變高。
本發明之反射板用聚醯胺組成物含有30質量%以上之熔點為280℃以上之聚醯胺(A)、及25質量%以上之氧化鈦(B),且聚醯胺(A)與氧化鈦(B)之合計含量為75質量%以上。本發明之反射板用聚醯胺組成物可視需要,進一步含有強化材(C)或氧化鎂及/或氫氧化鎂。
於本發明中,就獲得之反射板之耐熱性之觀點而言,聚醯胺(A)之熔點為280℃以上。本發明中使用之聚醯胺(A)之含量係相對於本發明之反射板用聚醯胺組成物整體之質量為30質量%以上,較佳為35質量%以上。若聚醯胺
(A)之含量未達30質量%,則產生下述問題:難以對反射板成形,又,獲得之反射板與LED封裝用密封構件之密合性變低,並且力學特性、尤其韌性變低等。
本發明中使用之聚醯胺(A)含有二羧酸單元及二胺單元。聚醯胺(A)之二羧酸單元含有50莫耳%以上之對苯二甲酸單元的情形係本發明較佳之一實施態樣(以下,將含有50莫耳%以上之對苯二甲酸單元作為二羧酸單元的聚醯胺(A)稱為聚醯胺(a-1))。又,聚醯胺(A)之二羧酸單元含有多於50莫耳%之1,4-環己二羧酸(1,4-Cyclohexanedicarboxylic acid)單元的情形係本發明較佳之另一實施態樣(以下,將含有多於50莫耳%之1,4-環己二羧酸單元作為二羧酸單元的聚醯胺(A)稱為聚醯胺(a-2))。
關於聚醯胺(a-1),就獲得之反射板之耐熱性等優異之觀點而言,二羧酸單元中所含之對苯二甲酸單元為50莫耳%以上,較佳為60莫耳%以上,進而較佳為70莫耳%以上。又,聚醯胺(a-1)係於不損及本發明效果之範圍內,可含有對苯二甲酸單元以外之二羧酸單元。對苯二甲酸單元以外之二羧酸單元,例如可列舉由丙二酸、丁二酸、戊二酸、己二酸、庚二酸、辛二酸、壬二酸、癸二酸、十一烷二羧酸、十二烷二羧酸、二甲基丙二酸、3,3-二乙基丁二酸、2,2-二甲基戊二酸、2-甲基己二酸、三甲基己二酸等脂肪族二羧酸;1,3-環戊二羧酸、1,3-環己二羧酸、1,4-環己二羧酸、環庚二羧酸、環辛二羧酸、環癸二羧酸等
脂環式二羧酸;間苯二甲酸、1,4-萘二甲酸、2,6-萘二甲酸、2,7-萘二甲酸、聯苯二甲酸、4,4'-聯苯二甲酸、二苯基甲烷-4,4'-二羧酸、二苯碸-4,4'-二羧酸等芳香族二羧酸等衍生之單元,該等單元亦可為1種或2種以上。進而,於不損及本發明之聚醯胺組成物所具有之上述性質的範圍內,亦可含有由偏苯三甲酸、1,3,5-苯三甲酸、均苯四甲酸等3元以上之多元羧酸衍生之單元。
關於聚醯胺(a-2),就獲得之反射板之耐熱性優異之觀點而言,二羧酸單元中所含之1,4-環己二羧酸單元大於50莫耳%,較佳為60莫耳%以上,進而較佳為80莫耳%以上。再者,1,4-環己二羧酸之順/反比係任一者皆可。又,聚醯胺(a-2)於不損及本發明之效果之範圍內,可含有1,4-環己二羧酸單元以外之二羧酸單元。1,4-環己二羧酸單元以外之二羧酸單元,例如可列舉由丙二酸、丁二酸、戊二酸、己二酸、庚二酸、辛二酸、壬二酸、癸二酸、十一烷二羧酸、十二烷二羧酸、二甲基丙二酸、3,3-二乙基丁二酸、2,2-二甲基戊二酸、2-甲基己二酸、三甲基己二酸等脂肪族二羧酸;1,3-環戊二羧酸、1,3-環己二羧酸、環庚二羧酸、環辛二羧酸、環癸二羧酸等脂環式二羧酸;對苯二甲酸、間苯二甲酸、1,4-萘二甲酸、2,6-萘二甲酸、2,7-萘二甲酸、聯苯二甲酸、4,4'-聯苯二甲酸、二苯基甲烷-4,4'-二羧酸、二苯碸-4,4'-二羧酸等芳香族二羧酸等衍生之單元,該等單元亦可為1種或2種以上。進而,於不損及本發明之聚醯胺組成物所具有之上述性質之範圍
內,亦可含有由偏苯三甲酸、1,3,5-苯三甲酸、均苯四甲酸等3元以上之多元羧酸中衍生之單元。
構成聚醯胺(A)之二胺單元較佳為含有50莫耳%以上之碳數為4~18之脂肪族二胺單元,更佳為含有於60~100莫耳%,進而較佳為於70~100莫耳%,最佳為於90~100莫耳%之範圍內。若碳數為4~18之脂肪族二胺單元之含量為50莫耳%以上,則組成物之成形性與獲得之反射板之耐熱性尤其優異。
碳數為4~18之脂肪族二胺單元,例如可列舉由1,4-丁二胺、1,5-戊二胺、1,6-己二胺、1,7-庚二胺、1,8-辛二胺、1,9-壬二胺、1,10-癸二胺、1,11-十一烷二胺、1,12-十二烷二胺等直鏈狀脂肪族二胺;1-丁基-1,2-乙二胺、1,1-二甲基-1,4-丁二胺、1-乙基-1,4-丁二胺、1,2-二甲基-1,4-丁二胺、1,3-二甲基-1,4-丁二胺、1,4-二甲基-1,4-丁二胺、2,3-二甲基-1,4-丁二胺、2-甲基-1,5-戊二胺、3-甲基-1,5-戊二胺、2,5-二甲基-1,6-己二胺、2,4-二甲基-1,6-己二胺、3,3-二甲基-1,6-己二胺、2,2-二甲基-1,6-己二胺、2,2,4-三甲基-1,6-己二胺、2,4,4-三甲基-1,6-己二胺、2,4-二乙基-1,6-己二胺、2,2-二甲基-1,7-庚二胺、2,3-二甲基-1,7-庚二胺、2,4-二甲基-1,7-庚二胺、2,5-二甲基-1,7-庚二胺、2-甲基-1,8-辛二胺、3-甲基-1,8-辛二胺、4-甲基-1,8-辛二胺、1,3-二甲基-1,8-辛二胺、1,4-二甲基-1,8-辛二胺、2,4-二甲基-1,8-
辛二胺、3,4-二甲基-1,8-辛二胺、4,5-二甲基-1,8-辛二胺、2,2-二甲基-1,8-辛二胺、3,3-二甲基-1,8-辛二胺、4,4-二甲基-1,8-辛二胺、5-甲基-1,9-壬二胺等支鏈狀脂肪族二胺等衍生之單元,且可含該有等中之1種或2種以上。
就可獲得賦予耐熱性、低吸水性等各物性優異之反射板的顆粒物,或耐熱性、低吸水性等各物性優異之反射板的觀點而言,碳數為4~18之脂肪族二胺單元較佳為由選自由1,4-丁二胺、1,6-己二胺、2-甲基-1,5-戊二胺、1,8-辛二胺、2-甲基-1,8-辛二胺、1,9-壬二胺、1,10-癸二胺、1,11-十一烷二胺、及1,12-十二烷二胺所組成之群的至少1種衍生之單元,更佳為1,9-壬二胺單元及/或2-甲基-1,8-辛二胺單元。
上述二胺單元亦可含有碳數為4~18之脂肪族二胺單元以外之二胺單元。其他二胺單元例如可列舉由乙二胺、1,2-丙二胺、1,3-丙二胺等脂肪族二胺;環己二胺、甲基環己二胺、異佛爾酮二胺、降莰烷二甲胺、三環癸烷二甲胺等脂環式二胺;對苯二胺、間苯二胺、對苯二甲基二胺、間苯二甲基二胺、4,4'-二胺基二苯甲烷、4,4'-二胺基二苯碸、4,4'-二胺基二苯醚等芳香族二胺等衍生之單元,且可含有其等中之1種或2種以上。二胺單元中之該等其他二胺單元之含有率較佳為40莫耳%以下,更佳為25莫耳%以下,進而較佳為10莫耳%以下。
又,聚醯胺(A)亦可含有胺基羧酸單元。胺基羧酸單
元,例如可列舉由己內醯胺、十二內醯胺等內醯胺;11-胺基十一烷酸、12-胺基十二烷酸等胺基羧酸等衍生之單元。聚醯胺(A)中之胺基羧酸單元之含有率係相對於聚醯胺(A)之二羧酸單元與二胺單元之合計100莫耳%,較佳為40莫耳%以下之比例,更佳為20莫耳%以下之比例。此外,亦可使用聚醯胺46作為聚醯胺(A)。
本發明中使用之聚醯胺(A)亦可含有來自末端密封劑之單元。來自末端密封劑之單元係相對於上述二胺單元,較佳為1~10莫耳%,更佳為3.5~8.5莫耳%。若來自末端密封劑之單元處於上述範圍,則聚醯胺組成物之成形性優異,獲得之反射板之耐光性或耐熱性更優異。
藉由於添加聚合原料時對二胺以達到上述所需之範圍之方式添加末端密封劑而進行將來自末端密封劑之單元設為上述所需之範圍。再者,考慮聚合時單體成分揮發之情形,較理想為以對獲得之樹脂中導入所需量之來自末端密封劑之單元之方式,對添加聚合原料時之末端密封劑之添加量進行微調整。
求出聚醯胺(A)中之來自末端密封劑之單元的方法,例如日本特開平07-228690號公報所示,可列舉如下方法等:測定溶液黏度,由該溶液黏度與數量平均分子量之關係式算出總末端基量,自其中減去由滴定求出之胺基量與羧基量;或者使用1H-NMR,基於與二胺單元及來自末端密封劑之單元各自對應的訊號之積分值求出。
末端密封劑,可使用具有與末端胺基或末端羧基之反
應性的單官能性化合物。具體而言,可列舉單羧酸、酸酐、單異氰酸酯、一元酸鹵化物、單酯類、單醇類、單胺等。就反應性及密封末端之穩定性等之觀點而言,作為對於末端胺基之末端密封劑,較佳為單羧酸,作為對於末端羧基之末端密封劑,較佳為單胺。又,就處理之簡易性之觀點而言,末端密封劑更佳為單羧酸。
用作末端密封劑之單羧酸,若為具有與胺基之反應性者則無特別限制,例如可列舉乙酸、丙酸、丁酸、戊酸、己酸、辛酸、月桂酸、十三酸、肉豆蔻酸、棕櫚酸、硬脂酸、特戊酸、異丁酸等脂肪族單羧酸;環戊羧酸、環己羧酸等脂環式單羧酸;苯甲酸、甲苯甲酸、α-萘甲酸、β-萘甲酸、甲基萘甲酸、苯乙酸等芳香族單羧酸;以及該等之任意混合物等。該等之中,就反應性、密封末端之穩定性、價格等方面而言,較佳為乙酸、丙酸、丁酸、戊酸、己酸、辛酸、十二烷酸、十三酸、肉豆蔻酸、棕櫚酸、硬脂酸、苯甲酸。
用作末端密封劑之單胺,若為具有與羧基之反應性者則無特別限制,例如可列舉甲胺、乙胺、丙胺、丁胺、己胺、辛胺、癸胺、硬脂醯胺、二甲胺、二乙胺、二丙胺、二丁胺等脂肪族單胺;環己胺、二環己胺等脂環式單胺;苯胺、甲苯胺、二苯胺、萘胺等芳香族單胺;以及該等之任意混合物等。該等之中,就反應性、高沸點、密封末端之穩定性及價格等觀點而言,較佳為丁胺、己胺、辛胺、癸胺、硬脂醯胺、環己胺、苯胺。
本發明中使用之聚醯胺(A)係可使用已知為製造結晶性聚醯胺之方法之任意方法製造。例如,可藉由以醯氯與二胺為原料之溶液聚合法或界面聚合法、以二羧酸與二胺為原料之熔融聚合法、固相聚合法、熔融擠出聚合法等方法而製造。
聚醯胺(A)係可藉由例如首先添加二胺、二羧酸、及視需要一併添加催化劑或末端密封劑製造尼龍鹽之後,於200~250℃之溫度進行加熱聚合製成預聚物,進而進行固相聚合,或者使用熔融擠出機進行聚合而製造。於藉由固相聚合進行聚合之最終階段之情形時,較佳為於減壓下或惰性氣體流動下進行,若聚合溫度為200~280℃之範圍內,則聚合速度較大,生產率優異,可有效地抑制著色或凝膠化。藉由熔融擠出機來進行聚合之最終階段時的聚合溫度,較佳為370℃以下,若以該條件進行聚合,則可獲得幾乎無分解且劣化較少之聚醯胺(A)。
可於製造聚醯胺(A)時使用之催化劑,例如可列舉磷酸、亞磷酸、次亞磷酸、該等之鹽或酯。上述鹽或酯可列舉磷酸、亞磷酸或次亞磷酸與鉀、鈉、鎂、釩、鈣、鋅、鈷、錳、錫、鎢、鍺、鈦、銻等金屬之鹽;磷酸、亞磷酸或次亞磷酸之銨鹽;以及磷酸、亞磷酸或次亞磷酸之乙酯、異丙酯、丁酯、己酯、異癸酯、十八烷酯、癸酯、硬脂酯、苯酯等。
於獲得本發明之聚醯胺組成物,較佳為使用50質量%以上之聚醯胺(A)作為粒徑範圍1mm以下之固形物。此
時,可容易將氧化鈦(B)之摻合量提昇至25質量%以上,且即便高摻合氧化鈦(B)亦可容易獲得各成分均一混合之組成物。再者,聚醯胺(A)之粒徑可藉由篩分法而求出。為獲得粒徑範圍1mm以下之固形物之聚醯胺(A),將聚醯胺(A)之預聚物粉碎篩選,將通過710μm間隔之篩網者作為主材料用於固相聚合即可。
本發明之聚醯胺組成物係相對於本發明之反射板用聚醯胺組成物整體之質量,含有25質量%以上之氧化鈦(B),較佳為含有30質量%以上。於含有25質量%以上之氧化鈦(B)之情形時,可提供即便受到熱或光之後,亦保持較高之反射率、且熱傳導性較高且耐熱性較高之反射板。又,於此情形時,即便聚醯胺(A)之含量相對較低,亦可獲得所得之反射板與LED封裝用之密封構件之高密合性。
氧化鈦(B)例如可列舉氧化鈦(TiO)、三氧化鈦(Ti2O3)、二氧化鈦(TiO2)等,且該等任一者皆可使用,但較佳為二氧化鈦。又,二氧化鈦較佳為具有金紅石型或銳鈦礦型之結晶結構者,更佳為具有金紅石型之結晶結構者。
氧化鈦(B)之形狀無特別限定,但較佳為非晶形。於使用非晶形之氧化鈦(B)之情形時,所得之反射板之尺寸變化及尺寸變化之異向性較小,可發揮抑制與密封劑之剝離等不良狀況的效果。
氧化鈦(B)之平均粒徑無論過大或過小皆存在光反射率下降之情形,故而較佳為0.1~0.5μm、更佳為0.15~
0.4μm、尤佳為0.2~0.3μm之範圍內。此處,亦可將塊狀者或平均粒徑較大者適當地粉碎,並視需要藉由篩網等進行分級,使用達到上述平均粒徑者。
又,氧化鈦(B)亦可使用經實施表面處理以改善組成物中之分散性者。表面處理劑例如可列舉二氧化矽、氧化鋁、氧化鋯、氧化錫、氧化銻、氧化鋅等金屬氧化物;矽烷偶合劑、矽酮等有機矽化合物;鈦偶合劑等有機鈦化合物;以及有機酸、多元醇等有機物等。
本發明之聚醯胺組成物其熔點280℃以上之聚醯胺(A)與氧化鈦(B)合計含有75質量%以上,較佳為80質量%以上。藉由採用該構成,將該組成物成形之反射板即便在LED封裝之製造步驟或使用環境中受到設想之熱或光之後亦保持較高之反射率,並且具有良好之力學特性與較高之耐熱性。進而,本發明之聚醯胺組成物可藉由含有大量之氧化鈦,而提昇熱傳導性,抑制使用環境下之LED元件或反射板之溫度上升,其結果,比先前更能達成LED元件之高壽命化。
本發明之反射板用聚醯胺組成物中,可視需要含有強化材(C)。強化材(C),可使用具有纖維狀、平板狀、針狀、粉末狀、十字狀等各種形態者。具體而言,可列舉玻璃纖維、碳纖維、芳香族聚醯胺纖維、液晶聚合物(LCP)纖維、金屬纖維等纖維狀填充劑;雲母、滑石等平板狀填充劑;鈦酸鉀晶鬚、硼酸鋁晶鬚、碳酸鈣晶鬚、硫酸鎂晶鬚、矽灰石、海泡石、硬矽鈣石、氧化鋅晶鬚等針狀填充
劑;二氧化矽、氧化鋁、碳酸鋇、碳酸鎂、氮化鋁、氮化硼、鈦酸鉀、矽酸鋁(高嶺土、黏土、葉臘石、膨土)、矽酸鈣、矽酸鎂(厄帖浦石)、硼酸鋁、硫酸鈣、硫酸鋇、硫酸鎂、石棉、玻璃珠、碳黑、石墨、奈米碳管、碳化矽、絹雲母、水滑石、二硫化鉬、酚樹脂粒子、交聯苯乙烯系樹脂粒子、交聯丙烯酸系樹脂粒子等粉末狀填充劑等。該等強化材料可單獨使用1種亦可併用2種以上。該等強化材(C)之表面可以提高對聚醯胺(A)中之分散性為目的,或者以提高與聚醯胺(A)之接著性為目的,利用矽烷偶合劑、鈦偶合劑、丙烯酸樹脂、胺基甲酸酯樹脂(urethane resin)、環氧樹脂等高分子化合物、或其他低分子化合物進行表面處理。
上述強化材(C)之中,就可獲得低成本且力學強度較高之成形品之觀點而言,較佳為纖維狀填充劑及/或針狀填充劑。該強化材(C)就高強度、低成本之觀點而言,較佳為使用玻璃纖維,就可獲得表面平滑性較高之成形品之觀點而言,較佳為使用針狀填充劑。尤其,就保持白色度之觀點而言,可較佳地使用選自由玻璃纖維、矽灰石、鈦酸鉀晶鬚、碳酸鈣晶鬚、及硼酸鋁晶鬚所組成之群的至少1種,可更佳地使用玻璃纖維及/或矽灰石。
就適當地提高成形性或力學特性之觀點而言,含有強化材(C)之情形時,其摻合量相對於本發明之反射板用聚醯胺組成物整體之質量,較佳為15質量%以下之範圍,更佳為10質量%以下之範圍。
本發明之反射板用聚醯胺組成物係以防止變色,抑制光反射率下降為目的,可進一步含有光穩定劑。光穩定劑可列舉二苯甲酮系化合物、水楊酸系化合物、苯并三唑系化合物、丙烯腈系化合物、其他共軛系化合物等具有紫外線吸收效果之化合物、受阻胺系化合物等具有自由基捕獲能力之化合物等。尤其就與聚醯胺(A)之親和性較高,且耐熱性亦優異之觀點而言,較佳為於分子內具有醯胺鍵之化合物。又,若將具有紫外線吸收效果之化合物與具有自由基捕獲能力之化合物併用,則可表現出更高之穩定化效果,故而較佳。
於含有光穩定劑之情形時,若考慮防止本發明之反射板用聚醯胺組成物之變色與抑制光反射率下降之效果、及不使製造成本過度增多之觀點,則其使用量相對於本發明之反射板用聚醯胺組成物整體之質量,較佳為2質量%以下、更佳為0.05~2質量%。再者,該等光穩定劑亦可併用2種以上使用。
本發明之反射板用聚醯胺組成物亦可含有氧化鎂及/或氫氧化鎂。藉此,尤其進行長時間加熱處理時,亦可抑制黃變等之變色或白色度下降。
氧化鎂及/或氫氧化鎂之平均粒徑並無特別限制,但就提高各種物性之觀點而言,較佳為0.05~10μm,更佳為0.1~5μm。又,亦可使用為提高與聚醯胺(A)之密合性及分散性而經實施表面處理者。表面處理劑例如可列舉胺基矽烷、環氧矽烷等矽烷偶合劑、矽酮等有機矽化合物;鈦
偶合劑等有機鈦化合物;有機酸、多元醇等有機物等。
於含有氧化鎂及/或氫氧化鎂之情形時,其量係相對於本發明之反射板用聚醯胺組成物整體之質量,較佳為0.5~10質量%之範圍,更佳為1~5質量%之範圍。若該含量未達0.5質量%則抑制加熱處理後之變色的效果較小,若超過10質量%則存在成形性下降之情形。
進而,本發明之反射板用聚醯胺組成物中亦可進而摻合苯胺黑或其他有機系或無機系著色劑;亞磷酸、磷酸、亞膦酸或該等之酯等熱穩定劑;受阻酚系、硫代系、磷系等抗氧化劑;抗靜電劑;結晶成核劑;可塑劑;聚烯烴蠟、高級脂肪酸酯等蠟類;聚矽氧油等脫模劑;潤滑劑等其他成分。於本發明之反射板用聚醯胺組成物中摻合其他成分之情形時,其量較佳為5質量%以下。
本發明之反射板用聚醯胺組成物係可藉由根據周知之方法混合上述各構成成分而製備。例如,可列舉於聚醯胺(A)之縮聚合反應時添加各成分之方法、乾摻合聚醯胺(A)與其他成分之方法、使用擠出機熔融混煉各構成成分之方法等。該等之中就操作容易以及可獲得均一之組成物等而言,較佳為,使用擠出機熔融混煉各構成成分之方法。此時所用之擠出機較佳為雙螺桿型者,作為熔融混煉溫度,較佳為比聚醯胺(A)之熔點高5℃之溫度至370℃以下之範圍內。
本發明之反射板用聚醯胺組成物係成形性良好,且本發明之反射板用聚醯胺組成物係可藉由射出成形、擠出成
形、壓製成形、吹塑成形、壓延成形、流延成形等普通對熱可塑性樹脂組成物使用之成形方法,而成形為反射板。又亦可採用組合上述成形方法之成形方法。尤其於成形之簡易性、量產性、成本等方面而言,較佳為射出成形。又,亦可將本發明之反射板用聚醯胺組成物與其他聚合物複合成形。進而,亦可將本發明之反射板用聚醯胺組成物與由金屬構成之成形體或布帛等進行複合化。
將本發明之反射板用聚醯胺組成物成形所得之反射板係具有良好之力學特性並且具有較高之耐熱性。又,該反射板係具有適度之表面粗糙度,故與LED封裝用之密封構件之密合性優異。進而,該反射板即便於LED封裝之製造步驟或使用環境中受到設想之熱或光之後亦保持較高之反射率(尤其相對於波長460nm附近之光的反射率)。又,該反射板具有較高之熱傳導性。
本發明之反射板用聚醯胺組成物成形所得之反射板可用作各種光源之反射板,尤其可較佳地用作LED之反射板。
因此,本發明之LED用反射板係使用有上述本發明之反射板用聚醯胺組成物的LED用反射板。本發明之LED用反射板可較佳地用作例如背光源、照明、汽車之各種燈等中使用之LED用之反射板。尤其可較佳地用作對應表面構裝之LED用之反射板。
於本發明之LED用反射板中,於24小時照射紫外線後測定的分光光度計之波長460nm之光反射率較佳為85%以
上。
本發明之LED用反射板可用於發光裝置,且該發光裝置之壽命較高。
因此,本發明之發光裝置係具備上述本發明之LED用反射板之發光裝置。本發明之發光裝置之例可列舉背光源、照明用光源、汽車之各種燈之光源等。
圖1中表示本發明之發光裝置之代表性構成之一例。圖1係模式性表示SMD(surface mounted device)型發光裝置(LED裝置)1。發光裝置1係於利用基板20與反射器(框體)30形成之封裝狀部50中配置有發光元件10,且於封裝狀部50中填充有密封構件40(透光性之樹脂)。
以下,對本發明之發光裝置之各要素進行說明。順帶而言,本發明之發光裝置並不限定於以下之要素。
半導體發光元件10可較佳地使用在500nm以下之波長區域具有發光峰值波長者。亦可不限定於具有單一發光峰值之半導體發光元件,而使用具有複數個發光峰值之半導體發光元件。再者,於具有複數個發光峰值之情形時,在比500nm長波長區域亦可具有1個或2個以上之發光峰值。又,亦可使用在可見光之長波長區域(501nm~780nm)內具有發光峰值之半導體發光元件。
半導體發光元件10之構成若為具備上述波長特性者則並無特別限定。可使用例如將GaAlN、ZnS、ZnSe、SiC、
GaP、GaAlAs、AlN、InN、AlInGaP、InGaN、GaN、AlInGaN等半導體形成為發光層者。
又,發光層亦可為含有任意之摻雜劑者。
半導體發光元件10可適當地使用複數個。例如,可使可綠色系發光之發光元件為2個,且使可藍色系及紅色系發光之發光元件各為1個。
半導體發光元件10對基板20之連接方法並無特別限制,但可使用導電性之環氧或矽酮接著劑。進而,為將自半導體元件中產生之熱效率佳地傳遞至基板,可使用低熔點之金屬。例如,可例示Sn/Ag/Cu(熔點220度)、Sn/Au(熔點282度)等。
封裝係裝載有半導體發光元件10之構件,且一部分或整體由上述本發明之LED用反射板形成。
本發明中,封裝既可為由單一之構件構成者,亦可為組合複數個構件而構成者。
封裝較佳為具有凹部(杯狀部)。封裝之1例,可列舉組合有反射器(框體)與基板者,例如,圖1中,以形成凹部(杯狀部)50之方式,使基板20上接著所需形狀之反射器(框體)30而構成封裝。基板20及反射器30係藉由將上述聚醯胺組成物成形而成的本發明之LED用反射板來形成。僅基板20及反射器30之一者亦可由本發明之LED用反射板形成。於如此地使用複數個本發明之LED用反射板之情形時,亦可將藉由改變聚醯胺組成物之組成形成LED
反射板而獲得之不同特性之LED用反射板組合使用。其他例可列舉將上述聚醯胺組成物以於一面側形成凹部(杯狀部)之方式成形,由1個LED用反射板形成封裝的構成。進而作為其他之例,亦可使用僅由平板狀之LED用反射板構成者作為封裝。
所謂形成於封裝之凹部(杯狀部)係指具有底部與側面部,且由具有與光軸垂直方向之剖面之面積自該底部朝向發光裝置之光取出方向連續或階段性增加之形狀的空間所構成之部分。於滿足如此條件之範圍內,底部及側面部之形狀並無特別限定。
密封構件40係以被覆半導體發光元件10之方式形成之構件,且主要以自外部環境保護半導體發光元件10之目的而具備。
於密封構件40中,可以保護半導體發光元件10或配線為目的而使用透明熱固性樹脂。透明熱固性樹脂,可例示含有環氧或矽酮之熱固性樹脂。矽酮可相應於封裝之要求特性而使用樹脂型、橡膠型、凝膠型。又,為提高與反射器30及密封構件40之密合性,可利用氬等惰性氣體電漿來處理反射器30。
亦可以於半導體發光元件10上積層由不同材料構成之複數層而形成之方式設置密封構件40。
亦可使密封構件40含有螢光體。可藉由使用螢光體,而將來自半導體發光元件10之光之一部分轉換為不同波長
之光,從而可改變或修正發光裝置之發光色。
螢光體若為可被來自於半導體發光元件10之光而激發者,則可使用任意者。例如,較佳地使用有選自下述至少1種以上,係:主要由Eu、Ce等鑭系元素活化之氮化物螢光體、氮氧化物系螢光體、賽隆系螢光體;主要由Eu等鑭系或Mn等過渡金屬系元素活化之鹼土類金屬鋁酸鹽螢光體、鹼土類矽酸鹽、鹼土類硫化物、鹼土類硫化鎵化合物、鹼土類氮化矽、鍺酸鹽;主要由Ce等鑭系元素活化之稀土類鋁酸鹽、稀土類矽酸鹽、或者主要由Eu等鑭系元素活化之有機化合物及有機錯合物等。
又,亦可組合複數種類之螢光體而使其含有於密封構件40。於此種情形時,亦可將被源自於半導體發光元件10之光激發而進行發光之螢光體、及被源自於該螢光體之光激發而進行發光之螢光體組合使用。
亦可藉由使密封構件40含有二氧化鈦或氧化鋅等光擴散體,而促進密封構件40內之光擴散,減少發光不均。
圖1之發光裝置1係例如以如下方式製造。首先,於作為本發明之LED用反射板之基板20上配置作為本發明之LED用反射板之反射器30。繼而,安裝半導體發光元件10,利用導線連接半導體發光元件10之電極與基板20上之配線圖案。繼而,準備由主劑與硬化劑構成之液狀矽酮密封劑,且灌注至杯狀部50中。於該狀態下加熱至約150℃使矽酮密封劑熱硬化。其後,於空氣中散熱。
圖2中表示由其他構成所構成之本發明之發光裝置2
之模式圖。圖2中,對與發光裝置1相同之要素標註相同之符號。發光裝置2係使用導線框架80代替基板,並於導線框架80之上部安裝半導體發光元件10。其他構成係與發光裝置1相同。
圖3中表示由其他構成所構成之本發明之發光裝置3之模式圖。圖3中,對與發光裝置1相同之要素標註相同之符號。發光裝置3中,使用有作為本發明之LED用反射板之基板70。基板70實施有所需之配線71。又,未使用框體(反射器),且如圖所示安裝半導體發光元件10之後,可藉由使用有所需之模具的模具成形而形成密封構件60。又,亦可預先準備成形為所需形狀之密封構件60,且使其以覆蓋半導體發光元件10之方式與基板70接著。
以上,作為本發明之構成例而對SMD型發光裝置進行了說明,但本發明亦可應用於在具有杯狀部之導線框架上安裝發光元件,且由密封構件被覆發光元件及導線框架之一部分的所謂炮彈型發光二極體。又,亦可應用於將發光元件以所謂倒裝晶片之形狀安裝於基板或導線框架上的倒裝晶片型之發光裝置。
又,本發明係具備上述發光裝置之照明裝置。本發明之照明裝置係使用上述高壽命之發光裝置,故而其壽命較長。本發明之照明裝置可按照周知方法構成,例如,可藉由於先前之LED照明裝置中,將用於LED照明用光源之先前之發光裝置置換為上述發光裝置等而構成。
又,本發明係具備上述發光裝置之影像顯示裝置(例如,行動電話等移動通信機器之小型顯示器、數位相機、數位攝影機等攝影機器之小型顯示器、汽車導航系統之小型顯示器、電腦、液晶TV等中型/大型顯示器等)。本發明之影像顯示裝置係使用上述高壽命之發光裝置,故而其壽命較長。本發明之影像顯示裝置可按照周知方法構成,例如,可藉由於先前之影像顯示裝置中,將用於LED背光源之先前之發光裝置置換為上述發光裝置等而構成。
以下,列舉實施例及比較例對本發明進行詳細說明,但本發明並未限定於該等實施例。
再者,於以下之實施例及比較例中,極限黏度、熔點、反射率、彎曲破裂應變、焊接彎曲破裂應變、表面粗糙度係藉由以下之方法進行評價。
自下述聚醯胺取出一部分作為試樣,於濃硫酸中、30℃下測定0.05、0.1、0.2、0.4g/dl之濃度之試樣的固有黏度(ηinh),且將使其外插為濃度0之值作為極限黏度[η]。
ηinh=[In(t1/t0)]/c
[式中、ηinh表示固有黏度(dl/g),t0表示溶劑之流下時間(秒),t1表示試樣溶液之流下時間(秒),c表示溶液中之試樣濃度(g/dl)。]
自下述聚醯胺取出一部分作為試樣,使用Mettler Toledo(股份有限公司)製造之示差掃描熱量分析裝置(DSC822),將約10mg之試樣於氮環境下,以10℃/分鐘之速度自30℃加熱至360℃,且於360℃下保持2分鐘使試樣完全熔解之後,以10℃/分鐘之速度冷卻至30℃,於30℃保持2分鐘。將再次以10℃/分鐘之速度升溫至360℃時出現之熔解峰值之峰值溫度作為熔點。具有複數個熔解峰值之情形時將最高溫側之熔解峰值之峰值溫度作為熔點。
使用各實施例及比較例中獲得之聚醯胺組成物,以比聚醯胺之熔點高約20℃之缸體溫度進行射出成形(模具溫度:140℃),製作厚度1mm、寬度40mm、長度100mm之試片,利用日立製作所股份有限公司製造之分光光度計(U-4000)求出試片於460nm之波長之反射率。
使用各實施例及比較例中獲得之聚醯胺組成物,以比聚醯胺之熔點高約20℃之缸體溫度進行射出成形(模具溫度:140℃),製作厚度1mm、寬度40mm、長度100mm之試片。將該試片於熱風乾燥機中以170℃加熱處理2小時。利用日立製作所股份有限公司製造之分光光度計(U-4000)求出加熱處理後之試片之於460nm之波長之反射率。
使用各實施例及比較例中獲得之聚醯胺組成物,以比聚醯胺之熔點高約20℃之缸體溫度進行射出成形(模具溫
度:140℃),製作厚度1mm、寬度40mm、長度100mm之試片。將該試片設置於具備KF-1濾光片(Daipla Wintes股份有限公司製)之耐光性試驗裝置(Daipla Wintes股份有限公司製SUPER WIN MINI)的「與上部石英玻璃面相距25cm之距離」,進行24小時之光照射。再者,設置有試片之位置上的300~400nm之波長之照度為10mW/cm2。利用日立製作所股份有限公司製造之分光光度計(U-4000)求出光照射後之試片之於460nm之波長之反射率。
使用各實施例及比較例中獲得之聚醯胺組成物,以比聚醯胺之熔點高約20℃之缸體溫度進行射出成形(模具溫度:140℃),製作厚度1mm、寬度10mm、長度30mm之試片。使用該試片,利用島津製作所股份有限公司製造之自動立體測圖儀,測定23℃之彎曲破裂應變及焊接彎曲破裂應變。
使用各實施例及比較例中獲得之聚醯胺組成物,以比聚醯胺之熔點高約20℃之缸體溫度進行射出成形(模具溫度:140℃),製作厚度1mm、寬度10mm、長度30mm之試片。使用該試片,利用小坂研究所股份有限公司製造之表面粗糙度測定器求出表面粗糙度。再者,該表面粗糙度成為密封構件與基板之密合性指標。例如,作為本發明之構成例所示之SMD型之發光裝置中,於使用聚矽氧樹脂作為密封劑時,使反射板表面之凹凸最佳為50nm至500μm左
右,於不存在表面性之凹凸之情形時,聚矽氧樹脂無法進入凹凸而未能錨合,故而密合性變差。又,若表面之凹凸過大,則進入凹凸部之聚矽氧樹脂無法充分與基板錨合,故密合性變差。根據測定結果,將凹凸之粗糙度良好者設為「○」、凹凸之粗糙度過大者設為「×」,示於表1中。
以下之實施例及比較例中使用有下述材料。
使用根據日本特開平7-228689號公報之實施例1記載之方法製備,且由對苯二甲酸單元、1,9-壬二胺單元及2-甲基-1,8-辛二胺單元(1,9-壬二胺單元:2-甲基-1,8-辛二胺單元之莫耳比為85:15)構成之極限黏度[η](於濃硫酸中、30℃下測定)為0.9dl/g、熔點為306℃之末端密封率為77%(末端密封劑:苯甲酸)的聚醯胺。
將對苯二甲酸4788.3g(28.8莫耳)、1,10-癸二胺5093.4g(29.6莫耳)、作為末端密封劑之苯甲酸143.7g(1.18莫耳)、次亞磷酸鈉-水合物10g、及蒸餾水2.5L放入內容積40L之高壓釜中,進行氮置換。以2小時將內部溫度升溫至200℃。此時,高壓釜升壓至2MPa。其後,將內部溫度保持為230℃ 2小時,一面逐漸排出水蒸氣使壓力保持於2Mpa一面進行反應。其次,以30分鐘使壓力下降至1.2Mpa,獲得預聚物。將該預聚物粉碎至1mm以下之大小,於120℃且減壓下乾燥12小時。使其於240℃、13.3Pa之
條件固相聚合10小時,獲得極限黏度[η](於濃硫酸中、以30℃測定)為0.93dl/g、熔點為315℃之聚醯胺,且使用該聚醯胺。
將順反比為70:30之1,4-環己二羧酸5111.2g(29.7莫耳)、1,9-壬二胺4117.6g(26.0莫耳)、2-甲基-1,8-辛二胺726.6g(4.59莫耳)、作為末端密封劑之苯甲酸224.2g(1.84莫耳)、次亞磷酸鈉-水合物10g、及蒸餾水2.5L放入內容積40L之高壓釜中,進行氮置換。以2小時將內部溫度升溫至200℃。此時,高壓釜升壓至2MPa。其後,將內部溫度保持為215℃ 2小時,一面逐漸排出水蒸氣,使壓力保持於2Mpa一面進行反應。其次,以30分鐘使壓力下降至1.2Mpa,獲得預聚物。將該預聚物粉碎至1mm以下之大小,於120℃且減壓下乾燥12小時。使其於230℃、13.3Pa之條件固相聚合10小時,獲得末端密封劑單元為4.3莫耳%、極限黏度[η](於濃硫酸中、以30℃測定)為0.87dl/g、熔點為315℃之聚醯胺,且使用該聚醯胺。
再者,於製造聚醯胺(a-1-i)、(a-1-ii)、及(a-2)時,粉碎各預聚物後,確認已粉碎之預聚物之75~90質量%通過710μm間隔之篩網之篩後進行固相聚合。
石原產業股份有限公司製造之「Tipaque CR-90」(二氧化鈦:平均粒徑0.25μm)
日東紡織股份有限公司製造之「CS3J256」(玻璃纖維:GF)
Kinsel Matec股份有限公司製造之「SH-1250」(矽灰石:WS)
Clariant Japan股份有限公司製造之「Nylostab S-EED」(2-乙基-2-乙氧基-乙二醯苯胺)
協和化學工業股份有限公司製造之「MF-150」(氧化鎂:平均粒徑0.71μm)
使用篩選機,對聚醯胺(A)、氧化鈦(B)、強化劑(C)、光穩定劑(D)、氧化鎂(E)及脫模劑以表1所示之摻合量,進行乾摻合。對獲得之混合物使用雙螺桿型擠出機,以比使用之聚醯胺之熔點高20℃之溫度進行熔融混煉,並擠出為顆粒狀,製備聚醯胺組成物。使用獲得之聚醯胺組成物,根據上述方法製作特定形狀之試片,且評價各種物性。結果示於表1。
如表1所示,實施例之反射板用聚醯胺組成物即便進行設想有LED之製造步驟之高溫加熱處理,亦保持波長460nm之反射率為95%以上,即便進行設想有實際之LED點燈之光照射處理,亦保持波長460nm之反射率為80%以上,在具有耐久性優異之反射特性之同時,保持與封裝之密封步驟對應之表面性、及力學強度。結果,適於LED封裝之製造步驟或使用環境,且具備該反射板之發光裝置、以及具備該發光裝置之照明裝置及影像顯示裝置可達到壽命較長。
分別使用實施例1及比較例1之聚醯胺組成物,將反射板成形,進而使用該反射板製作發光裝置,進行光度保持率之評價。評價結果示於表2。再者,用於評價之發光裝置及光度保持率之測定方法係如下所述。
發光裝置係設為圖1所示之SMD型之發光裝置1之構成。發光元件10中使用有於460nm處具有發光峰值波長之藍色發光者。密封構件40使用了矽酮(信越化學股份有限公司製:商品名KER2500)。反射器30係使用本公司製3228尺寸之反射器。
實施例11之反射器30之材料中,使用有實施例1所示之聚醯胺組成物。使密封構件中含有以(Y,Ga)3Al5O12:Ce表示之YAG系螢光體。
比較例4係將反射器30之材料變更為比較例1所示之
聚醯胺組成物,且與實施例11同樣地製作圖7所示之SMD型之發光裝置。
將實施例11及比較例4之發光裝置於85℃、15mA下進行1000小時通電試驗,藉由求出對於0小時之光度之1000小時後之光度而測定光度保持率(1000小時之光度/0小時之光度)。再者,對各實施例及比較例測定150個發光裝置之光度,且將其平均值作為各實施例及比較例之光度。
由表2顯然可確認,具備使用有相當於本發明之聚醯胺組成物之實施例1之聚醯胺組成物的LED用反射板之發光裝置(實施例11)具有優異之光度保持率。
使用有本發明之反射板用聚醯胺組成物之反射板即便於受到熱或光之後亦保持較高之反射率,因此,可較佳地用作具有反射光之功能的零件、例如LED、投影儀等之光源、照明器具或汽車之頭燈用之反射板。尤其可較佳地用作對應於表面構裝之LED反射板。
1‧‧‧發光裝置
2‧‧‧發光裝置
3‧‧‧發光裝置
10‧‧‧發光元件
20‧‧‧基板
30‧‧‧反射器(框體)
40‧‧‧密封構件
50‧‧‧杯狀部
60‧‧‧密封構件
70‧‧‧基板
71‧‧‧配線
80‧‧‧導線框架
圖1係模式性表示本發明之發光裝置1之構成之圖。
圖2係模式性表示本發明之發光裝置2之構成之圖。
圖3係模式性表示本發明之發光裝置3之構成之圖。
Claims (11)
- 一種反射板用聚醯胺組成物,其含有30質量%以上之熔點為280℃以上的聚醯胺(A)、及25質量%以上之氧化鈦(B),且該聚醯胺(A)與該氧化鈦(B)之合計含量為75質量%以上,該聚醯胺(A)之二羧酸單元含有多於50莫耳%之1,4-環己二羧酸(1,4-Cyclohexanedicarboxylic acid)單元(其中,不包含該聚醯胺(A)係使下述二羧酸與下述二胺聚合而成者之情形,該二羧酸含有至少50莫耳%之1,4-環己二羧酸,該二胺含有至少50莫耳%之主鏈為分支給構之二胺)。
- 如申請專利範圍第1項之反射板用聚醯胺組成物,其中,該聚醯胺(A)之二胺單元含有50莫耳%以上之碳數為4~18之脂肪族二胺單元。
- 如申請專利範圍第2項之反射板用聚醯胺組成物,其中,該碳數為4~18之脂肪族二胺單元係1,9-壬二胺單元及/或2-甲基-1,8-辛二胺單元。
- 如申請專利範圍第1項之反射板用聚醯胺組成物,其進一步含有15質量%以下之強化材(C)。
- 如申請專利範圍第4項之反射板用聚醯胺組成物,其中,該強化材料(C)係玻璃纖維及/或矽灰石。
- 如申請專利範圍第1項之反射板用聚醯胺組成物,其進一步含有氧化鎂及/或氫氧化鎂。
- 一種LED用反射板,其使用有申請專利範圍第1項之反射板用聚醯胺組成物。
- 如申請專利範圍第7項之LED用反射板,其中,於照射紫外線24小時後測定之分光光度計之波長460nm之光的反射率為85%以上。
- 一種發光裝置,其具備有申請專利範圍第7項之LED用反射板。
- 一種照明裝置,其具備有申請專利範圍第9項之發光裝置。
- 一種影像顯示裝置,其具備有申請專利範圍第9項之發光裝置。
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