TWI540631B - 去膠膜方法及裝置 - Google Patents

去膠膜方法及裝置 Download PDF

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TWI540631B
TWI540631B TW103124698A TW103124698A TWI540631B TW I540631 B TWI540631 B TW I540631B TW 103124698 A TW103124698 A TW 103124698A TW 103124698 A TW103124698 A TW 103124698A TW I540631 B TWI540631 B TW I540631B
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substrate
film
fixing
fluid
roller
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TW201530644A (zh
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劉進財
呂國良
劉德隆
張富程
李建成
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台灣積體電路製造股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/10—Removing layers, or parts of layers, mechanically or chemically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2310/00—Treatment by energy or chemical effects
    • B32B2310/04—Treatment by energy or chemical effects using liquids, gas or steam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/14—Semiconductor wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
    • Y10T156/1111—Using solvent during delaminating [e.g., water dissolving adhesive at bonding face during delamination, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/17—Surface bonding means and/or assemblymeans with work feeding or handling means

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Cleaning In General (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Adhesive Tapes (AREA)

Description

去膠膜方法及裝置
本揭露係有關於半導體工業，且特別是有關於半導體工業中的去膠膜方法及裝置。
半導體裝置應用於各種電子應用元件中，例如個人電腦、手機、數位相機及其他電子裝置。半導體裝置之製造通常包含依序沉積絕緣或介電層、導電層及/或半導體層之材料於半導體基材上，並以微影製程圖案化各種材料層，以形成電子零件或元件於半導體基材上。
一半導體晶圓上通常具有數以百計之積體電路。這些積體電路經由沿切割道所作之切割，分離成多個獨立的晶片。接著，這些獨立晶片分別封裝於各多晶片模組或其他型態之封裝體中。
隨著各種電子元件(例如電晶體、二極體、電阻器、電容器等)之最小尺寸持續微縮，半導體工業持續增進電子元件之積體密度，而使更多的元件能整合於預定面積中。在一些應用中，這些微小化後的電子元件亦需更小的封裝體，使用較過去之封裝體更小的體積。
目前已發展出立體積體電路(3DIC)結構及封裝體來增加積體密度。3DIC結構通常需要在傳統結構中不需要的製程步驟。這些額外的製程步驟可能會導致一些在傳統結構中未 曾出現的未知問題。
本揭露係提供一種去膠膜方法，包含：提供一基材，其具有一基材膠膜附於其上，此基材包含多個與基材膠膜接合之電連接器；提供一流體至此基材與此基材膠膜之間；以及當流體位於此基材及此基材膠膜之間時，自此基材移除此基材膠膜。
本揭露亦提供一種去膠膜方法，包含：放置一基材於一浸潤槽中，此基材包含多個與基材膠膜接合之電連接器；黏著一固定用膠膜至此基材膠膜；提供一流體至此浸潤槽中；以及當此流體及此基材於此浸潤槽時，自基材剝除此固定用膠膜及黏著於此固定用膠膜上之此基材膠膜。
本揭露更提供一種去膠膜裝置，包含：一浸潤槽；一基材座，用以固定一基材及放置此基材進入此浸潤槽中；一第一固定滾軸，用以分配此固定用膠膜；一第二固定滾軸，用以捲動此固定用膠膜；以及一可移動滾軸，用以延伸進入此浸潤槽中及黏著此固定用膠膜至此基材上之一基材膠膜。
為讓本發明之上述和其他目的、特徵、和優點能更明顯易懂，下文特舉出較佳實施例，並配合所附圖式，作詳細說明如下：
10‧‧‧基材
12‧‧‧連接器
14‧‧‧膠膜
16‧‧‧邊緣
18‧‧‧流體
20‧‧‧流體層
22‧‧‧流體層
24‧‧‧流體層
30‧‧‧基材支撐物
32‧‧‧水平線
34‧‧‧夾角
36‧‧‧基材
38‧‧‧膠膜
40‧‧‧流體
42‧‧‧噴灑器
44‧‧‧滾軸
50‧‧‧浸潤槽
52‧‧‧基材座
54‧‧‧固定滾軸
56‧‧‧固定滾軸
58‧‧‧可調滾軸
60‧‧‧可移動滾軸
62‧‧‧樞軸
64‧‧‧基材
66‧‧‧連接器
68‧‧‧膠膜
70‧‧‧固定用膠膜
72‧‧‧順時針方向旋轉
74‧‧‧流體
76‧‧‧順時針方向旋轉
78‧‧‧順時針方向旋轉
80‧‧‧積體電路晶片
82‧‧‧中介板
84‧‧‧導電凸塊
86‧‧‧密封材料
第1至4圖顯示依照本揭露一實施例之浸潤去膠膜製程。
第5圖顯示依照本揭露一些實施例之去膠膜裝置及浸潤去 膠膜製程。
第6至14圖顯示依照本揭露一些實施例之去膠膜裝置及浸潤去膠膜製程。
第15圖顯示為依照本揭露一實施例之示範結構，對其施予浸潤去膠膜製程。
本揭露將提供許多不同的實施例，其用以實施本發明中不同的特徵。以下所述的特定元件及配置方式之實施例係已經過簡化，非用於限定本發明之範圍。例如，此外，當敘述一第一元件形成於一第二元件上時，可包含第一元件與第二元件直接接觸之實施例，或也可包含該第一元件與第二元件之間更有其他額外元件，而使該第一元件與第二元件無直接接觸之實施例。在本揭露中，當敘述第一製程在第二製程之前進行時。此外，在本發明之各種舉例之圖示及實施例中，各種元件可能以任意不同比例顯示以使圖示清晰簡潔，且參考標號可能會有所重複以使表達能清晰簡潔，但不代表各實施例及/或圖示間有所關連。
本揭露實施例將討論關於半導體製程中之去膠膜(de-taping)，例如浸潤去膠膜(immersion de-taping)製程。本領域具有通常知識者亦可明瞭在此所述之實施例之變化可由其他實施例互補。例如，可以特定順序實施一些方法實施例，但亦可以其他邏輯順序實施其他的方法實施例。
第1至4圖顯示依照本揭露一實施例之浸潤去膠膜製程。第1圖顯示歷經電連接器及/或凸塊12(在此皆稱為連接器) 之製程後之基材10(例如晶圓)。例如，連接器可為控制塌陷高度晶片連接(controlled collapse chip connection)凸塊。基材10可包含電子裝置，例如包含積體電路晶片。膠膜14位於連接器12及基材10上。膠膜14可在例如分離製程中之對基材10提供機械支撐。在第2圖中，自膠膜14之邊緣16將膠膜14自基材10拉離(pull away)，並施予流體18至膠膜14及基材10之間。流體18可為電阻約105ohms至約109ohms之流體，例如去離子水或其他類似流體。在一些實施例中，流體18可與氣體混合，例如二氧化碳、臭氧、其他氣體或前述之組合。在一些實施例中，流體18之pH值為約7。在其他實施例中，流體18之pH值為大於7或小於7。毛細現象可將流體18拉至膠膜14及基材10之間並使流體18圍繞連接器12。因此，如第3圖所示，可形成流體層20於膠膜14及基材10之間。此外，如第3圖所示，自基材10移除膠膜14之步驟是起始於在邊緣16處將膠膜14自基材10剝除。在自基材10移除膠膜14後，流體18之殘餘膜層22及24可各自位於基材10及膠膜14上。在第4圖中，膠膜14自基材10完全移除。
自開始移除膠膜14時，即可持續提供流體18，直至膠膜14被移除，或可為前述步驟作任意變化組合。毛細效應可使流體層22遍佈於基材10表面上，及可使流體層22只存在於移除膠膜14產生之折痕(crease)、縫隙(seam)或前述之任意變化之處。任何位於基材10及/或連接器12上之流體18殘餘層22可由流體18之表面張力及/或隨後之清潔製程予以移除。
第5圖顯示依照本揭露一些實施例之去膠膜裝置及浸潤去膠膜製程。第5圖顯示用以在去膠膜製程中固定基材 36之基材支撐物30。基材支撐物30用以自水平線傾斜至與水平線32夾一角度34。此角度34可為自水平線傾斜約15度至約45度。去膠膜製程起始於基材36之最高處邊緣(由傾斜所導致)。可稍微撕去膠膜38之邊緣，並在此邊緣處施予流體40至膠膜38及基材36之間。毛細現象及/或重力作用可將流體40拉至基材36及膠膜38之間。或者，可由噴灑器(dispenser)42施予流體40。噴灑器42可為手工動擠壓瓶之管路或用以噴灑流體之自動噴灑器之管路。流體40可自開始移除膠膜38時施予，並在膠膜38之移除期間皆持續提供。滾軸44可用以幫助自基材36移除膠膜38。滾軸44可施予均勻力量至膠膜38，且跨越膠膜38移除處之折痕(crease)或縫隙(seam)。可由手動方式或由用以移除膠膜38之滾軸來實現滾軸44之移動。在自基材36移除膠膜38後，任何殘餘的流體40可由流體18之表面張力及/或隨後的清潔製程予以移除。
第6至14圖顯示依照本揭露一些實施例之去膠膜裝置及浸潤去膠膜製程。此裝置包含浸潤槽50、基材座(substrate chuck)52、固定滾軸(fixed roller)54及56、可調滾軸(adjustable roller)58及可移動滾軸(moveable roller)60。在此實施例中，所述各種元件可為手動及/或自動操作。基材座52用以在去膠膜製程中支撐及固定基材，並用以沿一樞軸(pivot)62轉動。在製程開始時，具有連接器66及膠膜68之基材64置於基材座52上，且基材座52位於水平位置上。供給固定用膠膜(clamp tape)70至固定滾軸54及56。可由固定滾軸56分配固定用膠膜70之未使用的部分，且固定用膠膜70之使用過的部分 可捲繞於固定滾軸54上。固定用膠膜70可為單側具有黏性之膜，其可用於膠膜68之黏著及用於在此所述之膠膜68移除。可移動滾軸60用以延伸進入至浸潤槽50中，以黏合固定用膠膜70及膠膜68，如稍後之圖式所示。可調滾軸58可用以將固定用膠膜70分配至與基材64上經浸潤之膠膜68具有合適之夾角。在一些實施例中，如固定滾軸56可以合適角度分配固定用膠膜70，可省略可調滾軸58。
在第7圖中，基材座52(伴隨基材64及膠膜68)降至浸潤槽50中。在此實施例中，可藉由將基材座52沿樞軸62旋轉約15度至約45度，以將基材座52降至浸潤槽50中。在其他實施例中，可以其他方法將基材64及膠膜68降至浸潤槽50中，例如以保持基材座52於水平位向之方式將基材座52降至浸潤槽50中。
在第8圖中，可移動滾軸60延伸至進入浸潤槽50中。藉由此延伸，可移動滾軸60可對固定用膠膜70之先前未使用的部分作分配。在所示之實施例中，係以固定滾軸56之順時針方向旋轉72表示由固定滾軸56所作的分配。在進行分配之期間，固定滾軸54不會旋轉(例如可施予此固定滾軸54減速機制)，以使固定滾軸54不會不經意地對固定用膠膜70之先前使用過的部分作分配。
在第9圖中，可移動滾軸60完全延伸至浸潤槽50中，以使固定用膠膜70之一部分接觸至膠膜68之頂面。如圖所示，固定用膠膜70之位於可移動滾軸60及可調滾軸58之間之一部分的平面與膠膜68之頂面平行。固定用膠膜70之此部分可與膠 膜68之頂面相觸並相黏。
在第10圖中，流體74填入浸潤槽50中。流體74可為去離子水、具有約105ohms至109ohms的電阻之流體或其類似物。在一些實施例中，流體74可與氣體混合，例如二氧化碳、臭氧、其他合適氣體或前述之組合。在一些實施例中，流體74之pH值為約7。在其他實施例中，流體74之pH值為小於7或大於7。在一些實施例中，流體74完全浸潤基材64及膠膜68。在其他實施例中，流體74未完全浸潤基材64及膠膜68。藉由浸潤膠膜68、連接器66及基材64及/或毛細效應，流體74可穿透至膠膜68及基材64之間及穿透至連接器66周圍。流體74可自浸潤槽50上之龍頭(spigot)或其類似物流入浸潤槽50中。
在第11圖中，固定滾軸54開始捲動(roll)固定用膠膜70。此如圖示，固定滾軸54以順時針方向旋轉76，捲動固定用膠膜70。當固定滾軸54捲動固定用膠膜70時，可移動滾軸60仍位於延伸位置，以使固定用膠膜70具有張力，且可移動滾軸60可沿膠膜68之頂面橫越固定用膠膜70，以提供壓力來確保固定用膠膜70及膠膜68之間具有足夠的黏著度。當固定用膠膜隨固定滾軸70之捲動時，可移動滾軸60可在橫越膠膜68頂面之方向上朝可調滾軸58移動。隨著固定用膠膜70之捲動及可移動滾軸60移動，可自基材64及連接器66移除(例如剝除)膠膜68。在捲動中，可對固定滾軸56施予減速機制而使其不旋轉，以使固定滾軸56不會不經意地對固定用膠膜70之先前未使用的部分作分配。
在第12圖中，固定滾軸54持續其順時針轉動76， 以捲動固定用膠膜70，直至膠膜68完全自基材64及連接器66移除。可移動滾軸66持續朝向可調滾軸58之方向橫越，直至可移動滾軸60抵達其原本位置。
在第13圖中，流體74自浸潤槽50移除或洩出，例如由浸潤槽50之排出口移除。流體74之表面張力可使其自基材64及連接器66完全移除。在一實施例中，可使用氣體噴灑器(未顯示)，以將流體74完全自基材64及連接器66移除。此外，固定滾軸54可持續其順時針旋轉76，以使固定用膠膜70之使用過的部分及黏著至固定用膠膜70上之膠膜68捲繞至固定滾軸54上。當固定用膠膜70及膠膜68捲繞至固定滾軸54上時，固定滾軸56可以順時針方向旋轉78，以分配固定用膠膜70之未使用的部分分配至一可供隨後的基材及膠膜使用的位置。
在第14圖中，基材座52返回其水平位置，例如沿軸62作旋轉。基材64可在隨後製程中(包含用以移除基材64及連接器66上之任何殘餘流體74之清潔步驟)脫膠並自基材座62移除。
第15圖顯示一3DIC之示範例結構，並對其使用浸潤去膠膜製程。基材10包含與中介板82藉由導電凸塊(例如微凸塊)接合之積體電路晶片80，且包含一密封材料86密封晶片80。中介板82包含一中介基板，其具有貫穿基板之穿孔(簡稱貫穿孔，TSV)貫穿其中。中介基板之第一側上具有重分佈元件，例如一或多層介電層及金屬層，且導電凸塊84及晶片80接合於此重分佈元件上。中介基板之第二側上具有金屬層，其與連接器12相連接。此第二側亦可包含重分佈元件。此製程可包含： 形成貫穿孔於中介基板(其在製程中可為晶圓)中；形成重分佈元件於中介基板之第一側上；將晶片80接合至重分佈元件上；以密封材料86密封晶片80；及對中介基板之第二側作處理，以暴露出貫穿孔，及形成金屬層及連接器12。隨後，將膠膜14黏著至連接器12及中介板82上，以作切割。在切割製程中，可使用前述之去膠膜製程自連接器12及中介板82移除膠膜14。
本揭露實施例可具有多項優點。藉由使用浸潤去膠膜製程，由於毛細效應及/或重力效應，流體可穿透至膠膜及基材之間，減少膠膜及基材之間的接觸區域。可避免或減少靜電放電效應(ESD)之發生強度(例如較低的放電電壓)，進而提高產品之良率。
雖然本發明已以數個較佳實施例揭露如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍內，當可作任意之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
30‧‧‧基材支撐物
32‧‧‧水平線
34‧‧‧夾角
36‧‧‧基材
38‧‧‧膠膜
40‧‧‧流體
42‧‧‧噴灑器
44‧‧‧滾軸

Claims (10)

  1. 一種去膠膜方法，包含：提供一基材，其具有一基材膠膜附於其上，該基材包含多個與基材膠膜接合之電連接器；提供一流體至該基材與該基材膠膜之間；以及當流體位於該基材及該基材膠膜之間時，自該基材移除該基材膠膜。
  2. 如申請專利範圍第1項所述之去膠膜方法，其中該流體包含去離子水。
  3. 如申請專利範圍第1項所述之去膠膜方法，其中提供該流體至該基材及該基材膠膜之間之步驟包含：提供一具有該流體之浸潤槽；以及浸潤該基材及該基材膠膜至該浸潤槽中之該流體中；且其中移除該基材膠膜之步驟，包含：黏著一固定用膠膜至該基材膠膜；以及自該基材剝除該固定用膠膜及黏著於該固定用膠膜上之該基材膠膜。
  4. 如申請專利範圍第1項所述之去膠膜方法，其中在自該基材移除該基材膠膜之期間，該基材為傾斜的。
  5. 一種去膠膜方法，包含：放置一基材於一浸潤槽中，該基材包含多個與基材膠膜接合之電連接器；黏著一固定用膠膜至該基材膠膜；提供一流體至該浸潤槽中；以及 當該流體及該基材於該浸潤槽時，自基材剝除該固定用膠膜及黏著於該固定用膠膜上之該基材膠膜。
  6. 如申請專利範圍第5項所述之去膠膜方法，其中黏著該固定用膠膜之步驟包含延伸一可移動滾軸至該浸潤槽中，以由一第一固定滾軸分配該固定用膠膜，且其中該自該基材剝除該固定用膠膜及黏著於該固定用膠膜上之該基材膠膜之步驟包含捲繞該固定用膠膜至一第二固定滾軸上，該可移動滾軸在該繞中橫越該基材膠膜。
  7. 如申請專利範圍第5項所述之去膠膜方法，其中該基材包含：一中介板，該些電連接器位於該中介板之一第一側上；以及一包含一電子裝置之積體電路晶片，該積體電路晶片與該中介板之一第二側相接合，該第二側與該第一側相對。
  8. 一種去膠膜裝置，包含：一浸潤槽；一基材座，用以固定一基材及放置該基材進入該浸潤槽中；一第一固定滾軸，用以分配該固定用膠膜；一第二固定滾軸，用以捲動該固定用膠膜；以及一可移動滾軸，用以延伸進入該浸潤槽中及黏著該固定用膠膜至該基材上之一基材膠膜。
  9. 如申請專利範圍第8項所述之去膠膜裝置，其中該基材座用以沿一軸旋轉，以放置該基材進入該浸潤槽中。
  10. 如申請專利範圍第8項所述之去膠膜裝置，其中該可移動滾軸用以施予一壓力至該固定用膠膜，以黏合該固定用膠膜及該基材膠膜，及當該第二固定滾軸捲動該固定用膠膜時，提供足夠之張力至該固定用膠膜；以及該去膠膜裝置更包含一可調滾軸，其用以放置於一位置，以使在該可移動滾軸延伸進入該浸潤槽中時以黏著該固定用膠膜至該基材膠膜時，該固定用膠膜位於該基材膠膜之一平面。
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