CN104795312A - 浸没撕带 - Google Patents

浸没撕带 Download PDF

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Publication number
CN104795312A
CN104795312A CN201410160689.4A CN201410160689A CN104795312A CN 104795312 A CN104795312 A CN 104795312A CN 201410160689 A CN201410160689 A CN 201410160689A CN 104795312 A CN104795312 A CN 104795312A
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substrate
adhesive tape
described substrate
liquid
tape
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刘进财
吕国良
刘德隆
张富程
李建成
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Priority to CN201911157825.3A priority Critical patent/CN110816018B/zh
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67132Apparatus for placing on an insulating substrate, e.g. tape
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00Ancillary operations in connection with laminating processes
    • B32B38/10Removing layers, or parts of layers, mechanically or chemically
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2310/00Treatment by energy or chemical effects
    • B32B2310/04Treatment by energy or chemical effects using liquids, gas or steam
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • B32B2457/14Semiconductor wafers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386Separation by peeling
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11Methods of delaminating, per se; i.e., separating at bonding face
    • Y10T156/1111Using solvent during delaminating [e.g., water dissolving adhesive at bonding face during delamination, etc.]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/17Surface bonding means and/or assemblymeans with work feeding or handling means

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  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • ing And Chemical Polishing (AREA)
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Abstract

本发明描述了使用浸没撕带的实施例。提供了衬底,该衬底具有附接至其上的衬底胶带。该衬底包括附接至衬底胶带的导电连接件。在衬底和衬底胶带之间提供液体。当液体位于衬底和衬底胶带之间时,从衬底去除衬底胶带。另一实施例是一种装置,该装置包括浸没槽、衬底夹具、第一和第二固定压辊,以及可移动的压辊。衬底夹具配置为固定衬底且将衬底放置到浸没槽内。可操作第一固定压辊以分配夹紧胶带。可操作第二固定压辊以卷动夹紧胶带。可操作可移动的压辊以延伸到浸没槽中且将夹紧胶带粘附至衬底上的衬底胶带。本发明还提供了浸没撕带。

Description

浸没撕带
技术领域
本发明涉及半导体制造工艺领域,更具体地,涉及浸没撕带。
背景技术
半导体器件用于各种电子应用中,作为实例,诸如个人电脑、手机、数码相机和其他电子设备。通常通过在半导体衬底上方依次沉积绝缘层或介电层、导电层和/或半导体层的材料,然后使用光刻图案化各种材料层以在其上形成电路组件和元件来制造半导体器件。
通常在单个半导体晶圆上制造数十或数百个集成电路。通过沿划线锯切集成电路来分割单独的管芯。然后以例如多芯片模块或其他类型的封装将单独的管芯分别进行封装。
通过不断减小最小部件的尺寸,半导体工业不断提高各种电子组件(例如,晶体管,二极管,电阻器,电容器等)的集成密度,从而允许将更多的组件集成到给定的区域中。在一些应用中,这些较小的电子组件也需要比过去的封装件占用更少面积的更小的封装件。
已经开发了三维集成电路(3DIC)结构和封装件以提高集成密度。3DIC结构通常需要在传统结构中可能不需要的工艺步骤。这些额外的工艺步骤可引起传统结构预先未知的问题。
发明内容
为解决现有技术中存在的问题,本发明提供了一种方法,包括:提供衬底,所述衬底具有附接至所述衬底的衬底胶带,所述衬底包括附接至所述衬底胶带的导电连接件;在所述衬底和所述衬底胶带之间提供液体;以及当所述液体位于所述衬底和所述衬底胶带之间时,从所述衬底去除所述衬底胶带。
在上述方法中,其中,所述液体包括去离子水。
在上述方法中,其中,所述衬底包括电子器件。
在上述方法中,其中,在所述衬底和所述衬底胶带之间提供所述液体包括:提供具有所述液体的浸没槽;以及将所述衬底和所述衬底胶带浸没到所述浸没槽中的所述液体中。
在上述方法中,其中,去除所述衬底胶带包括:将夹紧胶带粘附至所述衬底胶带;以及将粘附有所述衬底胶带的所述夹紧胶带从所述衬底剥离。
在上述方法中,其中,在从所述衬底去除所述衬底胶带期间,所述衬底是倾斜的。
在上述方法中,其中,所述液体具有约为7的pH值。
根据本发明的另一个方面,提供了一种方法,包括:将衬底放置于浸没槽中,所述衬底包括附接至衬底胶带的导电连接件;使夹紧胶带粘附至所述衬底胶带;在所述浸没槽中提供液体;以及当所述液体和所述衬底位于所述浸没槽中时,将粘附有所述衬底胶带的所述夹紧胶带从所述衬底剥离。
在上述方法中,其中,所述液体包括去离子水。
在上述方法中,其中,将所述衬底放置在所述浸没槽中包括围绕枢轴旋转衬底夹具,所述衬底位于所述衬底夹具上。
在上述方法中,其中,当所述衬底位于所述浸没槽中时,使所述夹紧胶带粘附至所述衬底胶带。
在上述方法中,其中,粘附所述夹紧胶带包括使用可移动的压辊以使所述夹紧胶带延伸到所述浸没槽中,从而使所述夹紧胶带接触所述衬底胶带。
在上述方法中,其中,在所述浸没槽中提供所述液体包括将所述液体放置在所述浸没槽中,将所述衬底完全浸没在所述浸没槽中的所述液体中。
在上述方法中,其中,将所述夹紧胶带粘附至所述衬底胶带包括使可移动的压辊在所述浸没槽中延伸以从第一固定压辊分配所述夹紧胶带,其中,从所述衬底剥离粘附有所述衬底胶带的所述夹紧胶的步骤包括将所述夹紧胶带卷动到第二固定压辊上,在所述卷动期间,所述可移动的压辊在所述衬底胶带上移动。
在上述方法中,其中,所述液体具有约为7的pH值。
在上述方法中,其中,所述衬底包括:中介层,所述导电连接件位于所述中介层的第一侧上;以及集成电路芯片,包括电子器件,所述集成电路芯片附接至所述中介层的与所述第一侧相对的第二侧。
根据本发明的又一个方面,提供了一种装置,包括:浸没槽;衬底夹具,配置为固定衬底且将所述衬底放置到所述浸没槽内;第一固定压辊,可操作为分配夹紧胶带;第二固定压辊,可操作为卷动所述夹紧胶带;以及可移动的压辊,可操作为延伸到所述浸没槽中且将所述夹紧胶带粘附至所述衬底上的衬底胶带。
在上述装置中,其中,所述衬底夹具可操作为围绕枢轴点旋转,以将所述衬底放置到所述浸没槽中。
在上述装置中,其中,所述可移动的压辊可操作为将压力应用于所述夹紧胶带,从而将所述夹紧胶带粘附至所述衬底胶带,且当所述第二固定压辊卷动所述夹紧胶带时,向所述夹紧胶带提供张力。
在上述装置中,还包括可调整的压辊,所述可调整的压辊可操作为放置在一个位置处,使得当所述可移动的压辊延伸到所述浸没槽中以将所述夹紧胶带粘附至所述衬底胶带时,所述夹紧胶带与所述衬底胶带共平面。
附图说明
当结合附图进行阅读时,通过以下详细描述可以更好地理解本发明的各方面。应该注意,根据工业中的标准实践,各个部件未按比例绘制。事实上,为了清楚的讨论,各个部件的尺寸可以任意地增大或减小。
图1至图4是根据实施例的浸没撕带工艺的实例。
图5是根据一些实施例的第一示例撕带装置和浸没撕带工艺的另一实例。
图6至图14是根据一些实施例的第二示例撕带装置和浸没撕带工艺的另一实例。
图15示出了根据实施例的可应用的浸没撕带工艺的示例结构。
具体实施方式
以下公开提供了用于实现所提供主题的不同特征的许多不同的实施例或实例。下面描述了组件和布置的具体实例以简化本发明。当然,这些仅仅是实例,并不旨在限制本发明。例如,在以下描述中,在第二部件上方或者上形成第一部件可以包括第一部件和第二部件直接接触形成的实施例,且也可以包括在第一部件和第二部件之间可以形成额外的部件,从而使得第一部件和第二部件不直接接触的实施例。此外,本发明可在各个实例中重复参考标号和/或字母。该重复是为了简明和清楚,且其本身不表示所讨论的各个实施例和/或配置之间的关系。
实施例将在特定的环境中进行描述,即半导体工艺中的撕带,诸如浸没撕带工艺。本领域普通技术人员将容易理解对本文描述的实施例的修改,其属于其他实施例的范围内。例如,可以将方法实施例描述成以特定的顺序实施,但是可以以符合任意逻辑顺序的方式实施其他方法实施例。
图1至图4示出了根据实施例的浸没撕带工艺的实例。图1示出了在对诸如可控塌陷芯片连接(C4)凸块的导电连接件和/或凸块12(下文中称作“连接件”)进行一些工艺步骤之后的诸如晶圆的衬底10。衬底10可以包括诸如位于集成电路芯片中的电子器件。胶带14位于连接件12和衬底10上。例如,在分割工艺期间,胶带14可以用作用于衬底10的机械支持件。在图2中,将胶带14的边缘16从衬底10拉开。将诸如去离子水、电阻介于约105ohm和约109ohm之间的液体等的液体18应用于边缘16处和胶带14与衬底10之间。在一些实施例中,液体18可以与诸如二氧化碳(CO2)、臭氧(O3)的气体、另一种气体或它们的组合混合。在一些实施例中,液体18具有约为7的pH值,且在其他实施例中,液体18可以具有小于7或大于7的pH值。毛细作用可以将液体18吸(draw)到胶带14和衬底10之间且环绕连接件12。因此,如图3所示,可以在胶带14和衬底10之间形成液体18的层20。进一步如图3中所示,从边缘16开始,通过从衬底10剥离胶带14,从而从衬底10去除胶带14。在从衬底10去除胶带14之后,可以保留分别位于衬底10和胶带14上的液体18的残留层22和残留层24。在图4中,从衬底10完全去除了胶带14。
在去除胶带14的开始时可以分配液体18,其将在去除胶带14的过程中持续进行,或任何变化或它们的组合。毛细作用可导致形成贯穿衬底10的表面的液体18的层22,并且可导致液体18的层22只存在于去除了胶带14的折痕或缝处,或它们的任何变化。通过液体18的表面张力和/或通过随后的清洗工艺可以去除衬底10和/或连接件12上的任何残留的液体18的层22。
图5示出了根据一些实施例的示例撕带装置和浸没撕带工艺的另一实例。图5示出了在撕带工艺期间固定衬底36的衬底支持件30。衬底支持件30可配置为从水平线32以角度34倾斜。角度34可以是相对于水平线32的介于约15度和约45度之间的角度。撕带工艺开始于由倾斜引起的衬底36的最高边缘。可以将胶带38的边缘轻微地剥离开,且可以在边缘处将液体40分配到胶带38和衬底36之间。毛细作用和/或重力作用可以将液体40牵引至衬底36和胶带38之间。可以通过分配器42分配液体40。分配器42可以是人工操作挤压瓶的管或可以是配置为分配液体的自动分配器的管。可以从去除胶带38的初始时刻起开始分配液体40,在胶带的去除的过程中持续分配液体40,或任何变化或它们的组合。压辊44可用于帮助从衬底36去除胶带38。在去除的胶带38处,压辊44可帮助将均匀的力应用于横跨折痕或缝的胶带38。可以通过人工操作滚动压辊44或通过配置为去除胶带38的自动压辊实施压辊44的移动。在从衬底36去除胶带38之后,通过液体18的表面张力和/或通过随后的清洗工艺可以去除任何残留的液体40。
图6至图14示出了根据一些实施例的示例撕带装置和浸没撕带工艺的另一实例。该装置包括浸没槽50、衬底夹具52、固定的压辊54和56、可调整的压辊58和可移动的压辊60。在这个实施例中描述的各个组件的操作可以是自动的和/或人工的。衬底夹具52配置为在撕带工艺期间支持和固定衬底,且配置为可以围绕枢轴62旋转。在工艺开始时,具有连接件66和胶带68的衬底64位于衬底夹具52上,而衬底夹具52位于水平位置处。在固定的压辊54和56上提供夹紧胶带70。可以从固定的压辊56分配夹紧胶带70的未使用部分,且可以将夹紧胶带70的已使用部分卷动到固定的压辊54上。如本文所讨论的,夹紧胶带70可以是能够粘附至胶带68且去除胶带68的单侧粘性薄膜。如后面的示图所示,可移动的压辊60配置为延伸到浸没槽50内且将夹紧胶带70粘附至胶带68。可调整的压辊58可用于提供以相对于衬底64上的浸没胶带68的合适的角度分配的夹紧胶带70。在实施例中,诸如如果固定的压辊56以合适的角度分配夹紧胶带70时,可以省略可调整的压辊58。
在图7中,将带有衬底64和胶带68的衬底夹具52降低至浸没槽50内。在这个实施例中,通过旋转围绕枢轴62的衬底夹具52(例如介于约15度和45度之间),将衬底夹具52降低至浸没槽50中。其他实施例考虑通过其他方法将衬底64和胶带68降低至浸没槽50内,诸如以水平方向将衬底夹具52降低至浸没槽50内。
在图8中,可移动的压辊60延伸到浸没槽50中。通过以这种方式延伸,可移动的压辊60导致将从固定的压辊56分配夹紧胶带70的先前未使用的部分。在这个示例性实施例中,通过固定的压辊56的顺时针旋转72示出了从固定的压辊56的分配。在该分配期间,固定的压辊54可以不旋转,诸如通过对固定的压辊54应用制动机构,使得夹紧胶带70的先前已使用部分不会非故意地从固定的压辊54处分配。
在图9中,可移动的压辊60完全延伸到浸没槽50中,使得夹紧胶带70的一部分接触胶带68的顶面。如所示出的,夹紧胶带70位于可移动的压辊60和可调整的压辊58之间的部分的平面平行于胶带68的顶面。夹紧胶带70的这部分可以接触并粘附至胶带68的顶面。
在图10中,浸没槽50充满液体74。液体74可以是去离子水、电阻介于约105ohm和约109ohm之间的液体等。在一些实施例中,液体74可以与诸如二氧化碳(CO2)、臭氧(O3)的气体、另一种气体或它们的组合混合。在一些实施例中,液体74具有约为7的pH值,且在其他实施例中,液体74可以具有小于7或大于7的pH值。液体74完全浸没衬底64和胶带68,但是在其他实施例中,液体74不完全浸没衬底64和胶带68。通过浸没胶带68、连接件66和衬底64和/或通过毛细作用,液体74可渗透到胶带68和衬底64之间且环绕连接件66。液体74可以从浸没槽50上的龙头等流入到浸没槽50内。
在图11中,固定的压辊54开始卷动夹紧胶带70。通过固定的压辊54的顺时针旋转76示出了卷动行为。当固定的压辊54卷动夹紧胶带70时,可移动的压辊60保持延伸,使得张力保留在夹紧胶带70上,且可移动的压辊60可以沿胶带68的顶面在夹紧胶带70上移动以提供压力,从而确保夹紧胶带70对胶带68的足够的粘附性。随着固定的压辊54卷动夹紧胶带70,可移动的压辊60在胶带68的顶面上以一定的方向移动且朝着可调整的压辊58的方向移动。随着夹紧胶带70的卷动和可移动的压辊60的移动,诸如通过剥离从衬底64和连接件66处去除胶带68。在该卷动期间,例如,通过将制动机构应用于固定的压辊56,固定的压辊56可以不旋转,使得夹紧胶带70的先前未使用部分不会非故意地从固定的压辊56处分配。
在图12中,固定的压辊54继续其顺时针旋转76以卷动夹紧胶带70,直到从衬底64和连接件66完全去除胶带68。可移动的压辊60以朝着可调整的压辊58的方向继续移动,直到可移动的压辊60到达其初始位置。
在图13中,使液体74从浸没槽50中去除或流干,诸如通过浸没槽50上的排水管。由于去除了液体74,液体74的表面张力可以从衬底64和连接件66去除基本上全部的液体74。在实施例中,气雾(未示出)可应用于从衬底64和连接件66去除液体74。此外,固定的压辊54可继续其顺时针旋转76以将夹紧胶带70的已使用部分和粘附至夹紧胶带70的胶带68卷动到固定的压辊54上。当夹紧胶带70和胶带68卷动到固定的压辊54上时,固定的压辊56可以以顺时针旋转方向78旋转,以将夹紧胶带70的未使用部分分配至随后的衬底和胶带要使用的位置。
在图14中,诸如通过围绕枢轴62旋转衬底夹具52,衬底夹具52返回到其水平位置。将衬底64撕带,且可以从衬底夹具52处去除衬底64以用于随后的工艺,随后的工艺可以包括可去除保留在衬底64和连接件66上的任何残留的液体74的清洗步骤。
图15示出了可以应用浸没撕带工艺的示例结构,例如三维集成电路(3DIC)。衬底10包括集成电路芯片80和封装芯片80的密封材料86,每个集成电路芯片80均包括电子器件,集成电路芯片80通过诸如微凸块的导电凸块84附接至中介层82。中介层82包括中介层衬底,穿过中介层衬底形成有衬底通孔(TSV)。在中介层衬底的第一侧上形成重分布元件,诸如一个或多个介电层和金属化层,导电凸块84和芯片80附接至重分布元件。在中介层衬底的第二侧上形成金属化层,连接件12连接至该金属化层。第二侧还可以包括重分布元件。在工艺期间,在中介层衬底(其可以是在工艺期间的晶圆)中可以形成TSV;在中介层衬底的第一侧上可以形成重分布元件;可以将芯片80附接至重分布元件;可以通过封装材料86封装芯片80;并且可以处理中介层衬底的第二侧以露出TSV,形成金属化层并形成连接件12。随后,将胶带14附接至连接件12和中介层82以用于分割。在分割之后,上述撕带工艺可以用于从连接件12和中介层82处去除胶带14。
实施例可以实现多种优势。通过使用浸没撕带工艺,通过使胶带和衬底之间具有液体(其可能由于毛细作用和/或重力作用引起),可以减少胶带和衬底之间的接触面积。可大幅减小或避免静电放电(ESD)事件(诸如低压放电),这可带来较高的产品产量。
一个实施例是一种方法。提供了衬底且在其上具有附接的衬底胶带。该衬底包括附接至衬底胶带的导电连接件。在衬底和衬底胶带之间提供液体。当液体位于衬底和衬底胶带之间时,从衬底去除衬底胶带。
另一实施例是一种方法。将衬底放置于浸没槽中。该衬底包括附接至衬底胶带的导电连接件。将夹紧胶带粘附至衬底胶带。在浸没槽中提供液体。当液体和衬底位于浸没槽中时,从衬底剥离夹紧胶带,该夹紧胶带具有粘附至其上的衬底胶带。
又一实施例是一种装置,该装置包括浸没槽、衬底夹具、第一和第二固定的压辊以及可移动的压辊。衬底夹具配置为固定衬底且将衬底放置在浸没槽内。可操作第一固定压辊以分配夹紧胶带。可操作第二固定压辊以卷动夹紧胶带。可操作可移动的压辊以延伸到浸没槽内且将夹紧胶带粘附至衬底上的衬底胶带。
前文概述了一些实施例的特征,使得本领域普通技术人员可以更好地理解本发明的各方面。本领域普通技术人员应该理解,他们可以容易地以本发明作为基础来设计或修改用于实施与在此介绍的实施例相同的目的和/或实现相同的优势的其他工艺和结构。本领域普通技术人员也可以认识到,这些等同构造并不背离本发明的精神和范围,并且在不背离本发明的精神和范围的情况下,在此他们可以做出各种改变、替换和修改。

Claims (10)

1.一种方法,包括:
提供衬底,所述衬底具有附接至所述衬底的衬底胶带,所述衬底包括附接至所述衬底胶带的导电连接件;
在所述衬底和所述衬底胶带之间提供液体;以及
当所述液体位于所述衬底和所述衬底胶带之间时,从所述衬底去除所述衬底胶带。
2.根据权利要求1所述的方法,其中,所述液体包括去离子水。
3.根据权利要求1所述的方法,其中,所述衬底包括电子器件。
4.根据权利要求1所述的方法,其中,在所述衬底和所述衬底胶带之间提供所述液体包括:
提供具有所述液体的浸没槽;以及
将所述衬底和所述衬底胶带浸没到所述浸没槽中的所述液体中。
5.根据权利要求1所述的方法,其中,去除所述衬底胶带包括:
将夹紧胶带粘附至所述衬底胶带;以及
将粘附有所述衬底胶带的所述夹紧胶带从所述衬底剥离。
6.根据权利要求1所述的方法,其中,在从所述衬底去除所述衬底胶带期间,所述衬底是倾斜的。
7.根据权利要求1所述的方法,其中,所述液体具有约为7的pH值。
8.一种方法,包括:
将衬底放置于浸没槽中,所述衬底包括附接至衬底胶带的导电连接件;
使夹紧胶带粘附至所述衬底胶带;
在所述浸没槽中提供液体;以及
当所述液体和所述衬底位于所述浸没槽中时,将粘附有所述衬底胶带的所述夹紧胶带从所述衬底剥离。
9.根据权利要求8所述的方法,其中,所述液体包括去离子水。
10.一种装置,包括:
浸没槽;
衬底夹具,配置为固定衬底且将所述衬底放置到所述浸没槽内;
第一固定压辊,可操作为分配夹紧胶带;
第二固定压辊,可操作为卷动所述夹紧胶带;以及
可移动的压辊,可操作为延伸到所述浸没槽中且将所述夹紧胶带粘附至所述衬底上的衬底胶带。
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