US9425174B1 - Integrated circuit package with solderless interconnection structure - Google Patents
Integrated circuit package with solderless interconnection structure Download PDFInfo
- Publication number
- US9425174B1 US9425174B1 US14/546,296 US201414546296A US9425174B1 US 9425174 B1 US9425174 B1 US 9425174B1 US 201414546296 A US201414546296 A US 201414546296A US 9425174 B1 US9425174 B1 US 9425174B1
- Authority
- US
- United States
- Prior art keywords
- integrated circuit
- conductive
- package substrate
- circuit die
- package
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims abstract description 93
- 229910000679 solder Inorganic materials 0.000 claims description 26
- 230000037361 pathway Effects 0.000 claims description 11
- 238000000034 method Methods 0.000 description 20
- 239000012811 non-conductive material Substances 0.000 description 13
- 239000010410 layer Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 239000011241 protective layer Substances 0.000 description 8
- 238000007906 compression Methods 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 230000006835 compression Effects 0.000 description 5
- 238000004806 packaging method and process Methods 0.000 description 5
- 238000003491 array Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000003755 preservative agent Substances 0.000 description 2
- 230000002335 preservative effect Effects 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
- H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15192—Resurf arrangement of the internal vias
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Wire Bonding (AREA)
Abstract
Description
Claims (4)
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US14/546,296 US9425174B1 (en) | 2014-11-18 | 2014-11-18 | Integrated circuit package with solderless interconnection structure |
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US14/546,296 US9425174B1 (en) | 2014-11-18 | 2014-11-18 | Integrated circuit package with solderless interconnection structure |
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US9425174B1 true US9425174B1 (en) | 2016-08-23 |
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Cited By (5)
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---|---|---|---|---|
US10390440B1 (en) | 2018-02-01 | 2019-08-20 | Nxp B.V. | Solderless inter-component joints |
US20220157758A1 (en) * | 2020-11-13 | 2022-05-19 | Rohm Co., Ltd. | Semiconductor device |
US20220189890A1 (en) * | 2020-12-11 | 2022-06-16 | Nxp Usa, Inc. | Semiconductor device having integrated antenna and method therefor |
WO2022164560A1 (en) * | 2021-02-01 | 2022-08-04 | Qualcomm Incorporated | Package having a substrate comprising surface interconnects aligned with a surface of the substrate |
US11735529B2 (en) | 2021-05-21 | 2023-08-22 | International Business Machines Corporation | Side pad anchored by next adjacent via |
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US20220189890A1 (en) * | 2020-12-11 | 2022-06-16 | Nxp Usa, Inc. | Semiconductor device having integrated antenna and method therefor |
US11705410B2 (en) * | 2020-12-11 | 2023-07-18 | Nxp Usa, Inc. | Semiconductor device having integrated antenna and method therefor |
WO2022164560A1 (en) * | 2021-02-01 | 2022-08-04 | Qualcomm Incorporated | Package having a substrate comprising surface interconnects aligned with a surface of the substrate |
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