TWI529933B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TWI529933B
TWI529933B TW099137947A TW99137947A TWI529933B TW I529933 B TWI529933 B TW I529933B TW 099137947 A TW099137947 A TW 099137947A TW 99137947 A TW99137947 A TW 99137947A TW I529933 B TWI529933 B TW I529933B
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TW
Taiwan
Prior art keywords
layer
oxide
oxide semiconductor
metal
indium
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TW099137947A
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English (en)
Chinese (zh)
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TW201138104A (en
Inventor
山崎舜平
平石鈴之介
秋元健吾
坂田淳一郎
Original Assignee
半導體能源研究所股份有限公司
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Publication of TW201138104A publication Critical patent/TW201138104A/zh
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Publication of TWI529933B publication Critical patent/TWI529933B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01318—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
TW099137947A 2009-11-06 2010-11-04 半導體裝置 TWI529933B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009255103 2009-11-06

Publications (2)

Publication Number Publication Date
TW201138104A TW201138104A (en) 2011-11-01
TWI529933B true TWI529933B (zh) 2016-04-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW099137947A TWI529933B (zh) 2009-11-06 2010-11-04 半導體裝置

Country Status (6)

Country Link
US (1) US8530892B2 (https=)
JP (1) JP5663266B2 (https=)
KR (1) KR101818265B1 (https=)
CN (1) CN102598279B (https=)
TW (1) TWI529933B (https=)
WO (1) WO2011055668A1 (https=)

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CN106887436B (zh) * 2015-12-16 2019-10-25 鸿富锦精密工业（深圳）有限公司 薄膜晶体管阵列基板及其制备方法
TWI684283B (zh) * 2017-06-07 2020-02-01 日商日新電機股份有限公司 薄膜電晶體的製造方法
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US8530892B2 (en) 2013-09-10
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